CN209766857U - DFB laser of wide temperature range - Google Patents
DFB laser of wide temperature range Download PDFInfo
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- CN209766857U CN209766857U CN201921120027.9U CN201921120027U CN209766857U CN 209766857 U CN209766857 U CN 209766857U CN 201921120027 U CN201921120027 U CN 201921120027U CN 209766857 U CN209766857 U CN 209766857U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
The utility model provides a wide temperature range's DFB laser, this DFB laser's epitaxial layer structure include non-InP base plate, range upon range of N type articulamentum, grating buried layer, N type grating layer, N type restriction layer, lower waveguide layer, quantum well, go up waveguide layer, P type on restriction layer, P type corrosion barrier layer, P type articulamentum, first P type barrier gradual change layer, second P type barrier gradual change layer and P type ohmic contact layer on the non-InP base plate in proper order. The grating adopted by the laser is an N-type semiconductor material, so that the DFB laser with the N grating has a lower lasing threshold and a smaller parasitic resistance, and can work in a wider temperature range; the method adopts a flip-chip epitaxial growth mode, firstly grows a P-type layer, then grows an N-type grating manufacturing layer, and grows a quantum well layer in the delay process before the grating layer is prepared, so that the material interface is smooth, the material quality is good, and the defect density is small.
Description
Technical Field
The utility model relates to a DFB laser, in particular to DFB laser of wide temperature range.
Background
The 5G mobile network has the characteristics of high peak rate, dense ports and low time delay, and brings huge revolution to the Internet and the Internet of things. The 5G mobile network requires the optical module as signal transmission to have a higher modulation rate and a wider operating temperature range. The DFB laser establishes a Bragg grating in a semiconductor, realizes selection of a single longitudinal mode by means of light distribution feedback, has high speed, narrow line width and dynamic single longitudinal mode working characteristics, can inhibit mode hopping of a common FP laser in a wider working temperature and working current range, greatly improves the noise characteristic of a device, and has wide application in the field of optical communication, particularly 5G mobile communication.
The wavelength of a DFB laser for optical communication is generally 1310nm and 1550nm, and the epitaxial structure of a conventional DFB is shown in fig. 1, and includes an N-InP substrate 01, an N-type buffer layer 02, an N-type confinement layer 03, a lower waveguide layer 04, a quantum well 05, an upper waveguide layer 06, a P-type upper confinement layer 07, a P-type buffer layer 08, a P-type corrosion barrier layer 09, a P-type cladding layer 10, a P-type grating formation layer 11 deposited on the substrate by MOCVD in this order, and a P-type secondary epitaxial layer 12, P-type barrier graded layers 13 and 14, a P-type ohmic contact layer 15, and the like grown on the grating formation layer in this order after etching.
Conventionally, a P-grating structure is adopted, that is, N-type InP is adopted as a growth substrate, and quantum wells of AlGaInAs or InGaAsP are adopted as active layers. In the traditional DFB epitaxial structure, the grating is in a P-type layer, which can cause the increase of parasitic resistance and parasitic capacitance and influence the modulation speed of DFB laser, and the P-grating works in a narrow temperature range due to the limitation of a lasing threshold and the parasitic resistance.
In order to improve the temperature range of the DFB laser, a feasible method is that the grating is positioned on an N-type layer, and as carriers for transmitting current in an N-type semiconductor material are electrons, the carriers have longer carrier life and longer transport length than holes of P-type semiconductor carriers, and the influence of over-thick grating on the electrical performance of the laser can be compensated. And then, growing the grating in the N-type semiconductor material, which means that the active region needs to grow after the grating is manufactured, and the distance between the active region of the quantum well and the grating is less than 100nm, so that the grating needs to be buried and a smooth quantum well interface needs to be obtained in the small thickness, and the difficulty is very high.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned shortcomings of the prior art, it is an object of the present invention to provide a DFB laser with a wide operating temperature range, wherein the grating is located in the N-type layer.
In order to achieve the above and other related objects, the present invention provides a DFB laser with a wide temperature range, wherein the epitaxial layer structure of the DFB laser comprises a non-InP substrate, and an N-type connection layer, a grating burying layer, an N-type grating layer, an N-type confinement layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, a P-type upper confinement layer, a P-type corrosion barrier layer, a P-type connection layer, a first P-type barrier graded layer, a second P-type barrier graded layer and a P-type ohmic contact layer are sequentially stacked on the non-InP substrate.
As an embodiment, the material of the non-InP substrate is not limited, and the substrate has a good thermal conductivity, and the non-InP substrate may be a silicon substrate or an aluminum nitride substrate. The N-type connecting layer is an InP layer; the grating buried layer is an N-type InP layer; the N-type limiting layer is an N-AlInAs layer; the lower waveguide layer is an undoped AlGaInAs layer with gradually changed refractive index; the quantum well layer is an AlGaInAs quantum well with 11 periods; the upper waveguide layer is an undoped AlGaInAs layer with gradually changed refractive index; the P-type upper limiting layer is an AlInAs layer; the P-type corrosion barrier layer is an InGaAsP layer with the wavelength of 1100 nm; the P-type connecting layer is an InP layer; the first P-type barrier gradual change layer is an InGaAsP barrier gradual change layer with the wavelength of 1300 nm; the second P-type barrier gradual change layer is an InGaAsP barrier gradual change layer with the wavelength of 1500 nm; the P-type ohmic contact layer is an InGaAs layer.
As described above, the utility model discloses following beneficial effect has: the grating adopted by the laser is an N-type semiconductor material, so that the DFB laser with the N grating has a lower lasing threshold and a smaller parasitic resistance, and can work in a wider temperature range; the method adopts a flip-chip epitaxial growth mode, firstly grows a P-type layer, then grows an N-type grating manufacturing layer, and grows a quantum well layer in the delay process before the grating layer is prepared, so that the material interface is smooth, the material quality is good, and the defect density is small.
Drawings
Fig. 1 is a schematic structural view of an epitaxial layer of a conventional DFB laser.
Fig. 2 is a schematic structural diagram of an epitaxial layer of a DFB laser according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a DFB laser according to an embodiment of the present invention before forming a grating.
Fig. 4 is a schematic structural diagram of a grating formed in a DFB laser according to an embodiment of the present invention.
Detailed Description
The following description is provided for illustrative purposes, and other advantages and features of the present invention will become apparent to those skilled in the art from the following detailed description.
Please refer to fig. 1 to 4. It should be understood that the structure, ratio, size and the like shown in the drawings attached to the present specification are only used for matching with the content disclosed in the specification, so as to be known and read by those skilled in the art, and are not used for limiting the limit conditions that the present invention can be implemented, so that the present invention has no technical essential meaning, and any structure modification, ratio relationship change or size adjustment should still fall within the scope that the technical content disclosed in the present invention can cover without affecting the function that the present invention can produce and the purpose that the present invention can achieve. Meanwhile, the terms such as "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for convenience of description, and are not intended to limit the scope of the present invention, and changes or adjustments of the relative relationship thereof may be made without substantial technical changes, and the present invention is also regarded as the scope of the present invention.
as shown in fig. 2, the utility model provides a wide temperature range's DFB laser, this DFB laser's epitaxial layer structure includes non-InP base plate 17, non-InP base plate 17 is gone up and is stacked gradually and is provided with N type articulamentum 16, grating buried layer 024, N type grating layer 021, N type restriction layer 03, lower waveguide layer 04, quantum well layer 05, go up waveguide layer 06, the restriction layer 07 on the P type, P type corrosion barrier layer 09, P type articulamentum 12, first P type barrier gradual change layer 13, second P type barrier gradual change layer 14 and P type ohmic contact layer 15.
Preferably, the non-InP substrate is a silicon substrate or an aluminum nitride substrate.
Preferably, the N-type connection layer 16 is an InP connection layer; the grating buried layer 024 is an N-type InP layer; the N-type limiting layer 03 is an N-AlInAs limiting layer; the lower waveguide layer 04 is an undoped AlGaInAs lower waveguide layer with gradually changed refractive index; the quantum well layer 05 is an AlGaInAs quantum well with 11 periods; the upper waveguide layer 06 is an undoped AlGaInAs upper waveguide layer with gradually changed refractive index; the P-type upper limiting layer 07 is an AlInAs limiting layer; the P-type corrosion barrier layer 09 is an InGaAsP corrosion barrier layer with the wavelength of 1100 nm; the P-type connecting layer 12 is an InP connecting layer; the first P-type barrier gradual change layer 13 is an InGaAsP barrier gradual change layer with the wavelength of 1300 nm; the second P-type barrier gradual change layer 14 is an InGaAsP barrier gradual change layer with the wavelength of 1500 nm; the P-type ohmic contact layer 15 is an InGaAs ohmic contact layer.
The patent also discloses a preparation method of the DFB laser used in the wide temperature range, which comprises the following steps:
Step 1, taking an N-InP substrate as a growth substrate, and sequentially growing a first sacrificial buffer layer 11, an etching stop layer 12, a second sacrificial buffer layer 13, a P-type ohmic contact layer 15, a second P-type barrier gradient layer 14, a first P-type barrier gradient layer 13, a P-type connecting layer 12, a P-type etching barrier layer 09, a P-type upper limiting layer 07, an upper waveguide layer 06, a quantum well layer 05, a lower waveguide layer 04, an N-type limiting layer 03 and an N-type buffer layer 02 on the growth substrate, wherein the N-type buffer layer 02 is divided into an N-type grating manufacturing layer 022 and an N-type cap layer 023;
Step 2, etching the N-type cap layer 023 and the N-type grating manufacturing layer 022 by adopting an etching method to enable the N-type buffer layer 02 to form an N-type grating layer 021;
step 3, growing a grating buried layer 024 on the N-type grating layer 021, enabling the upper surface of the grating buried layer 024 to be parallel to the grating depth of the N-type grating layer 021, and growing an N-type connecting layer 16 with a certain thickness on the grating buried layer 024;
And 4, adhering the N-type connecting layer 16 on the non-InP substrate 17, and removing the growth substrate, the first sacrificial buffer layer 11, the corrosion stop layer 12 and the second sacrificial buffer layer 13.
specifically, as shown in fig. 3, N-InP with a conductivity of 2-8 × 10 18 cm -2 was used as a growth substrate 01, and the growth substrate 01 was placed in an MOCVD system of Aixtron corporation to grow, the pressure of the reaction chamber was 50mbar, the growth temperature was 670 ℃, H 2 was used as a carrier gas, and trimethylindium (TMIn), trimethylgallium (TMGa), trimethylaluminum (TMAl), diethylzinc (DeZn), silane (SiH 4), arsine (AsH3), phosphane (PH 3), and the like were used as reaction source gases.
A first sacrificial buffer layer 011, an etch stop layer 012, a second sacrificial buffer layer 013, a P-type ohmic contact layer 15, a second P-type barrier graded layer 14, a first P-type barrier graded layer 13, a P-type connecting layer 12, a P-type etch stop layer 09, a P-type upper limiting layer 07, an upper waveguide layer 06, a quantum well layer 05, a lower waveguide layer 04, an N-type limiting layer 03 and an N-type buffer layer 02 are sequentially grown on a growth substrate 01, and the N-type buffer layer 02 is divided into an N-type grating manufacturing layer 022 and an N-type cap layer 023. The first sacrificial buffer layer 011 is undoped InP, the etch stop layer 012 is undoped InGaAsP layer, the second sacrificial buffer layer 013 is undoped InP, the N-type grating formation layer 22 is InGaAsP layer with a wavelength of 1100nm, and the N-type cap layer 22 is InP layer.
After the first epitaxial growth is completed, the epitaxial wafer is taken out, the photoresist lines of the grating are formed on the N-type buffer layer 02 by a known holographic or electron beam exposure method, the grating is formed by ICP dry etching, and then the residual photoresist is removed, so that the original N-type grating manufacturing layer 22 is etched into an N-type grating layer 021, as shown in fig. 4. And cleaning the epitaxial wafer, then putting the epitaxial wafer into the MOCVD reaction furnace again, growing the grating buried layer 024 by adopting a pulse airflow method, and when the thickness of the grating buried layer 024 is just parallel to the depth of the N-type grating layer 021, increasing the growth rate, and growing the InP connecting layer 16 with a certain thickness to form the complete epitaxial structure of the DFB.
After the epitaxial layer is grown, photoetching the surface of the epitaxial wafer to form a pattern, evaporating metal in a specific area, bonding the metal with a corresponding non-InP substrate 17 with a metal pattern, removing a first sacrificial buffer layer 011, a corrosion stop layer 012 and a second sacrificial buffer layer 013 which are sequentially grown on a primary growth substrate 01 by adopting a grinding and wet etching method, reversing the epitaxial wafer, forming a ridge waveguide structure by utilizing photoetching and etching processes, evaporating a P-type electrode on the ridge waveguide structure, and evaporating an N-type electrode on the back of a new substrate; and then cutting to form a bar, evaporating a high-reflection film (with the reflectivity of 90%) on one end surface of the bar, evaporating a low-reflection film (with the reflectivity of 0.3%) on the other end surface of the bar, and then cutting to finish the manufacturing of the DFB laser chip.
The utility model provides a DFB laser based on N grating and preparation method thereof has following advantage: the grating is made of an N-type semiconductor material, so that the DFB laser with the N grating has a lower lasing threshold and a smaller parasitic resistance, and can work in a wider temperature range; secondly, a flip-chip epitaxial growth mode is adopted, a P-type layer is grown firstly, an N-type grating manufacturing layer is grown secondly, a quantum well layer grows in the delay process before the grating layer is prepared, the material interface is smooth, the material quality is good, and the defect density is small; thirdly, a substrate with good heat conductivity is arranged in the epitaxial layer structure of the DFB laser, so that heat generated during the working of the laser can be quickly dissipated, the temperature of a light emitting area of the laser is kept stable, and the laser can work in a wider temperature range; fourthly, the secondary epitaxial layer adopts low-temperature pulse type growth, which is beneficial to the complete preservation of the grating and the obtainment of a high-quality grating buried layer. Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles and effects of the present invention, and are not to be construed as limiting the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (3)
1. the DFB laser with the wide temperature range is characterized in that the epitaxial layer structure of the DFB laser comprises a non-InP substrate (17), wherein an N-type connecting layer (16), a grating buried layer (024), an N-type grating layer (021), an N-type limiting layer (03), a lower waveguide layer (04), a quantum well layer (05), an upper waveguide layer (06), a P-type upper limiting layer (07), a P-type corrosion barrier layer (09), a P-type connecting layer (12), a first P-type barrier gradual-changing layer (13), a second P-type barrier gradual-changing layer (14) and a P-type ohmic contact layer (15) are sequentially stacked on the non-InP substrate (17).
2. The broad temperature range DFB laser of claim 1 wherein the non-InP substrate (17) is a silicon substrate or an aluminum nitride substrate.
3. The broad temperature range DFB laser according to claim 1, wherein the N-type connection layer (16) is an InP layer; the grating buried layer (024) is an N-type InP layer; the N-type limiting layer (03) is an N-AlInAs layer; the lower waveguide layer (04) is an undoped AlGaInAs layer with gradually changed refractive index; the quantum well layer (05) is an AlGaInAs quantum well with 11 periods; the upper waveguide layer (06) is an undoped AlGaInAs layer with gradually changed refractive index; the P-type upper limiting layer (07) is an AlInAs layer; the P-type corrosion barrier layer (09) is an InGaAsP layer with the wavelength of 1100 nm; the P-type connecting layer (12) is an InP layer; the first P-type barrier gradual change layer (13) is an InGaAsP barrier gradual change layer with the wavelength of 1300 nm; the second P-type barrier gradual change layer (14) is an InGaAsP barrier gradual change layer with the wavelength of 1500 nm; the P-type ohmic contact layer (15) is an InGaAs layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110247301A (en) * | 2019-07-17 | 2019-09-17 | 全磊光电股份有限公司 | DFB laser with wide temperature range and preparation method thereof |
| CN110247301B (en) * | 2019-07-17 | 2024-02-20 | 全磊光电股份有限公司 | DFB laser with wide temperature range and preparation method thereof |
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Inventor after: Shan Zhifa Inventor after: Zhang Yong Inventor after: Chen Yanghua Inventor before: Shan Zhifa Inventor before: Zhang Yong Inventor before: Jiang Wei Inventor before: Chen Yanghua |