CN209748573U - On-chip external injection laser structure and quantum key distribution system transmitting terminal - Google Patents
On-chip external injection laser structure and quantum key distribution system transmitting terminal Download PDFInfo
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- CN209748573U CN209748573U CN201920850677.2U CN201920850677U CN209748573U CN 209748573 U CN209748573 U CN 209748573U CN 201920850677 U CN201920850677 U CN 201920850677U CN 209748573 U CN209748573 U CN 209748573U
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Abstract
The utility model discloses an on-chip outer injection laser structure and quantum key distribution system transmitting terminal, on-chip outer injection laser structure include the integrated optical chip, integrated semiconductor optical amplifier one, semiconductor optical amplifier two, distributed Bragg reflector one, distributed Bragg reflector two and reflection output device on the integrated optical chip, semiconductor optical amplifier one and distributed Bragg reflector one are connected through the optical waveguide, and semiconductor optical amplifier two and distributed Bragg reflector two pass through the optical waveguide and connect, semiconductor optical amplifier one and semiconductor optical amplifier two all pass through the optical waveguide with reflection output device and are connected. The utility model discloses based on outer injection locking principle, compare in the typical laser light source who is arranged in the QKD system, the light pulse of production has the time domain shake to be low, and advantages such as frequency domain linewidth are narrow have reduced the system error rate.
Description
Technical Field
The utility model belongs to Quantum cryptography Distribution technology (Quantum Key Distribution QKD) field, in particular to on-chip injects laser structure and Quantum Key Distribution system transmitting terminal into outward.
Background
Quantum cryptography combines quantum physics principles with modern communication technologies. The quantum cryptography communication guarantees the security of the key negotiation process and the result in different places by virtue of a physical principle, and can realize secret communication independent of algorithm complexity by combining with a one-time pad encryption technology.
At present, quantum cryptography mainly uses light quanta as a carrier for realization and distributes the light quanta through free space or an optical fiber channel. The quantum key distribution equipment loads classical random bits on physical quantities such as polarization, phase and the like of light quanta by utilizing various optical modulation equipment to transmit according to the requirements of different quantum key distribution protocols, so that the distribution of quantum keys is realized. Quantum key distribution protocols are of a wide variety including the classical BB84 protocol, MDI protocol (measuring device independent protocol), DPS protocol (differential phase shift protocol), etc.
A typical QKD system generally includes a transmitting end for encoding a key on a light quantum and a receiving end for decoding and measuring the light quantum. Since the key production efficiency of the QKD system is directly related to the system error rate, such a system is very sensitive to system error, which makes the requirements for the transmitting-end pulsed light source in the system very high, including low time-domain jitter, narrow spectral linewidth, etc. Secondly, for various phase-encoded QKD systems, since the key information is loaded on the phase difference between previous and subsequent optical pulses in these systems, the typical transmitting end needs to include a phase modulation device to modulate the optical pulses.
The 2016 toshiba cambridge research institute proposes a scheme [ 1 ] and [ 2 ] that uses a Laser external injection method for a quantum key distribution system, in the scheme, the structure of the Laser external injection method is two independent lasers, which are respectively called Master Laser and Slave Laser, and optical pulses emitted from the Master Laser are injected into a resonant cavity of the Slave Laser, so that the purposes of reducing the time domain jitter of the Laser, reducing the spectral line width and the like can be achieved, and the purpose of adjusting the phase difference of the optical pulses continuously emitted from the Slave Laser can be achieved by adjusting the Master Laser current modulation mode, so that other phase modulation devices are omitted in various phase coding QKD systems.
Meanwhile, the QKD optical integrated chip is a very important research direction all over the world nowadays, and various optical systems originally based on various independent optical devices can be integrated into a chip with a very small volume by using the technology, so that the cost is reduced firstly, and the application range of the QKD technology can be greatly enlarged secondly.
In summary, a novel on-chip and outside-injection laser structure and a QKD system transmitting end including the laser structure are required to be provided, and the structure is utilized to solve the defects of high optical pulse time domain jitter, wide spectral line width and the like generated by a laser light source in a typical QKD system and solve the defect of high error rate of the typical QKD system.
Disclosure of Invention
The utility model aims to solve the technical problem that not enough to above-mentioned prior art provides an on-chip laser structure and quantum key distribution system transmitting terminal of injecting into outward, and this on-chip laser structure and quantum key distribution system transmitting terminal of injecting into outward are compared in being arranged in the typical laser light source in the QKD system in the locking principle of injecting into outward, and the light pulse of production has the time domain shake to hang down, and advantages such as frequency domain line width have reduced the system error rate.
In order to realize the technical purpose, the utility model discloses the technical scheme who takes does:
The utility model provides an on-chip injects laser structure outward, includes integrated optical chip, integrated semiconductor optical amplifier one, semiconductor optical amplifier two, distributed Bragg reflector one, distributed Bragg reflector two and reflection output device on the integrated optical chip, semiconductor optical amplifier one and distributed Bragg reflector one pass through the optical waveguide connection, and semiconductor optical amplifier two and distributed Bragg reflector two pass through the optical waveguide connection, semiconductor optical amplifier one and semiconductor optical amplifier two all pass through the optical waveguide connection with reflection output device.
As a further improved technical solution of the present invention, the reflection output device adopts a two-in two-out multimode interferometer.
As a further improved technical solution of the present invention, the reflection output device adopts a third distributed bragg reflector.
In order to achieve the technical purpose, the utility model discloses another technical scheme who takes does:
The utility model provides a quantum key distribution system transmitting terminal, includes that the piece that adopts multimode interferometer injects laser structure, lures deceiving attitude and decay module, light source monitoring module and current drive unit outward, lure deceiving attitude and decay module and light source monitoring module all integrated on the integrated optical chip, the current drive unit is located the integrated optical chip outside, the piece is injected distributed Bragg reflector one and is lured deceiving attitude and decay module in the laser structure outward and pass through the optical waveguide connection, the piece is injected distributed Bragg reflector two and light source monitoring module in the laser structure outward and pass through the optical waveguide connection, semiconductor optical amplifier one and semiconductor optical amplifier two are connected with the current drive unit respectively.
As the technical proposal of the further improvement of the utility model, the decoy state and the attenuation module adopt an intensity modulator and an attenuator; the light source monitoring module adopts a strong light detector.
as the utility model discloses further modified technical scheme still includes optical pulse modulation module, one of the distributed bragg reflector of on-chip outer injection laser structure is connected with luring attitude and decay module through optical pulse modulation module.
In order to achieve the technical purpose, the utility model discloses another technical scheme who takes does:
The utility model provides a quantum key distribution system transmitting terminal, includes that the piece that adopts distributed Bragg reflector three injects laser structure, lures deception attitude and decay module, light source monitoring module and current drive unit outward, it all integrates on integrated optical chip to lure deception attitude and decay module and light source monitoring module, current drive unit is located integrated optical chip outside, the piece is injected distributed Bragg reflector one of laser structure outward and is passed through the optical waveguide with the deception attitude and decay module and be connected, the piece is injected distributed Bragg reflector two of laser structure outward and is passed through the optical waveguide with light source monitoring module and be connected, semiconductor optical amplifier one and semiconductor optical amplifier two are connected with current drive unit respectively.
As the technical proposal of the further improvement of the utility model, the decoy state and the attenuation module adopt an intensity modulator and an attenuator; the light source monitoring module adopts a strong light detector.
As the utility model discloses further modified technical scheme still includes optical pulse modulation module, one of the distributed bragg reflector of on-chip outer injection laser structure is connected with luring attitude and decay module through optical pulse modulation module.
The utility model has the advantages that: the utility model provides an on-chip injects laser instrument structure outward and contains the quantum key distribution system transmitting terminal of this laser instrument, this kind of on-chip injects laser instrument structure outward and can use in most QKD system, and because inject locking phenomenon outward, compare in the typical laser light source who is arranged in the QKD system, the light pulse that this kind of laser instrument structure produced has the time domain shake low, advantages such as frequency domain line width is narrow, and because the quality of the light pulse that this quantum key distribution system transmitting terminal produced is better, but the system error rate can be reduced, and through adjusting two current drive units of this transmitting terminal, also can be under the condition that does not need the external modulator (do not need the light pulse modulation module promptly), accomplish various phase coding, and the state modulation of time phase coding system. The utility model discloses an on-chip outer injection laser structure can reduce the volume of outer injection scheme light source, reduces its energy consumption and the preparation and the operation degree of difficulty. The utility model discloses each device in all integrate in a very little chip of volume, the cost is reduced, application range that can greatly increased QKD technique.
Drawings
Fig. 1 is a structural view of an on-chip and off-chip injection laser of example 1.
FIG. 2 is a structural view of the multimode interferometer of embodiment 1.
Fig. 3 is a first structure diagram of a transmitting end of the quantum key distribution system in embodiment 1.
Fig. 4 is a diagram of four light quantum states modulated by the second modulation method of the on-chip and out-injection laser structure in embodiment 1.
Fig. 5 is a diagram of four light quantum states modulated by a third modulation method of the on-chip and out-injection laser structure in embodiment 1.
Fig. 6 is a second structure diagram of the transmitting end of the quantum key distribution system in embodiment 1.
Fig. 7 is a structural view of an on-chip and off-chip injection laser of embodiment 2.
Fig. 8 is a first structure diagram of a transmitting end of the quantum key distribution system in embodiment 2.
Fig. 9 is a second structure diagram of the transmitting end of the quantum key distribution system of embodiment 2.
Detailed Description
The following further explains the embodiments of the present invention according to fig. 1 to 9:
Example 1: the embodiment provides an off-chip injection laser structure, which can be applied to a plurality of QKD protocol transmitting terminals including an MDI protocol, and a typical structure of the off-chip injection laser structure is shown in fig. 1, and specifically includes an integrated optical chip, on which a first semiconductor optical amplifier (SOA1), a second semiconductor optical amplifier (SOA2), a first distributed bragg Reflector (DBR1), a second distributed bragg Reflector (DBR2) and a reflection output device are integrated, where the reflection output device employs a two-in two-out multimode interferometer (2 x 2MMI Reflector). The first semiconductor optical amplifier and the first distributed Bragg reflector are connected through an optical waveguide, the second semiconductor optical amplifier and the second distributed Bragg reflector are connected through an optical waveguide, and the first semiconductor optical amplifier and the second semiconductor optical amplifier are both connected with the multimode interferometer through an optical waveguide.
The meaning and purpose of each component in the above on-chip and outside injection laser structure are respectively:
two-in two-out multimode interferometer (2 × 2MMI Reflector): the function of the on-chip beam splitter is as shown in fig. 2, light incident from the 1 port will have half of the light energy reflected from the 1 port and the other half reflected from the 2 port.
a first semiconductor optical amplifier (SOA1) and a second semiconductor optical amplifier (SOA 2): as a gain medium of the laser, the device can generate and amplify an optical field after being driven by passing current.
First distributed bragg mirror (DBR1) and second distributed bragg mirror (DBR 2): the cavity mirror of the laser has the characteristic of selecting a specific optical mode to reflect proportionally.
referring to fig. 1, a first semiconductor optical amplifier (SOA1) and a second semiconductor optical amplifier (SOA2) in the on-chip and off-chip injection laser structure are both connected with a current driving unit, and the current driving units are used as energy input of the laser and are used for driving the laser to generate laser.
in the structure of fig. 1, it can be seen that the SOA1, DBR1, and 2 x 2MMI Reflector constitute a Laser, referred to herein as Laser1, while the SOA2, DBR2, and 2 x 2MMI Reflector also constitute a Laser, referred to herein as Laser 2. Laser1 and Laser2 share one 2 x 2MMI Reflector.
The first specific modulation method of the on-chip and off-chip injection laser structure of fig. 1 is:
(1) The current drive unit connected with the SOA2 emits a narrow electric Pulse to drive the SOA2, so that the Laser2 generates a Laser Pulse2, and the Laser Pulse enters the Laser1 after being reflected by a2 × 2MMI Reflector.
(2) The repetition frequency and the duration of controlling the two current driving units are the same.
(3) by controlling the electrical delays of the two current driving units, the SOA1 is driven after the Pulse2 enters the Laser1, so that the Laser1 emits an optical Pulse1, and then the optical Pulse emitted in the Pulse1 is Output by the Output1, thereby generating the external injection locking phenomenon (i.e., the Laser1 is injection locked). Wherein Output2 produces Laser pulse Output from Laser 2.
(4) The electrical delays of the two current driving units are determined by the optical distances of the SOA1 and SOA2 on the chip, respectively, so that the electric Pulse emitted by the current driving unit connected to the SOA1 starts to drive the SOA1 to emit light after the Pulse2 enters the SOA 1.
According to the external injection locking principle, in this case, the optical pulse output by the Laser1 has improved time domain and frequency domain characteristics compared with the case without injection locking, and can be applied to various QKD systems. As shown in fig. 3, for an on-chip QKD system transmitting end structure (quantum key distribution system transmitting end for short) implemented by using the laser, the quantum key distribution system transmitting end includes an on-chip and external injection laser structure, an optical pulse modulation module, a decoy state and attenuation module, a light source monitoring module and two current driving units as in fig. 1, the optical pulse modulation module, the decoy state and attenuation module and the light source monitoring module are all integrated on an integrated optical chip, the current driving unit is located outside the integrated optical chip, a first distributed bragg reflector in the on-chip and external injection laser structure is connected with the optical pulse modulation module through an optical waveguide, the optical pulse modulation module is connected with the decoy state and attenuation module through an optical waveguide, a second distributed bragg reflector in the on-chip and external injection laser structure is connected with the light source monitoring module through an optical waveguide, the first semiconductor optical amplifier and the second semiconductor optical amplifier are respectively connected with an external current driving unit.
In fig. 3, the optical pulse modulation module is used to modulate the optical pulse exiting from the Output1 port, and includes, but is not limited to, the polarization property, the phase property, and the time property of the modulated optical pulse according to the different protocols implemented by the system. The decoy state and attenuation module generally comprises an intensity modulator for adjusting a pulse in a decoy state and an attenuator for attenuating an optical pulse to a single photon quantum, wherein the attenuator attenuates the optical pulse to the single photon quantum and outputs the single photon quantum through an Output3 port, and the Output3 is an Output port of an emission end of the quantum key distribution system. The light source monitoring module is used for monitoring the laser pulse emitted from the Output2 port, and can be a strong light detector generally.
The second specific modulation method of the on-chip and off-chip injection laser structure of fig. 1 is:
(1) The SOA2 is driven by a wider electrical Pulse emitted by a current drive unit connected to the SOA2 and the amplitude of the electrical Pulse is precisely varied during the duration of the electrical Pulse so that Laser2 generates a Laser Pulse2 and the phase jumps of the Pulse2 can be equal to 0, pi/2, pi and 3 pi/2 during the duration of the Pulse, and the Laser Pulse is reflected by a2 x 2MMI Reflector and enters the Laser 1.
(2) The current drive unit connected to SOA1 is controlled to emit electrical pulses at twice the repetition rate of the electrical pulses emitted by the current drive unit connected to SOA2 and for a duration greater than one cycle of the electrical pulses of the current drive unit connected to SOA 1.
(3) by controlling the electrical delays of the two current driving units, the SOA1 is driven after the Pulse2 enters the Laser1, so that the Laser1 continuously emits the optical pulses Pulse11 and Pulse12 during the injection time of the Pulse2, and then the optical Pulse emitted in the Laser1 is Output by the Output 1. Thereby creating an out-injection-lock phenomenon (i.e., Laser1 is injection locked).
(4) The electrical delays of the two current driving units are determined by the optical distances of the SOA1 and SOA2 on the chip, respectively, so that the electric Pulse emitted by the current driving unit connected to the SOA1 starts to drive the SOA1 to emit light after the Pulse2 enters the SOA 1.
According to the external injection locking principle, the phase difference of the front and back light pulses output in Laser1 is finally determined by Pulse2, so that four states required by the phase-coded QKD system can be modulated, as shown in fig. 4. Wherein the phase difference between the output light pulses Pulse11 and Pulse12 in state 1 is 0; the phase difference between the output light pulses Pulse11 and Pulse12 in the state 2 is pi/2; the phase difference between the output light pulses Pulse11 and Pulse12 in state 3 is pi; the phase difference between the output light pulses Pulse11 and Pulse12 in state 4 is 3 pi/2.
The third specific modulation method of the on-chip and off-chip injection laser structure of fig. 1 is:
(1) The SOA2 is driven by a wider electrical Pulse emitted by a current drive unit connected to the SOA2 and the amplitude of the electrical Pulse is precisely varied during the duration of the electrical Pulse so that Laser2 generates a Laser Pulse2 and its phase jumps can be equal to 0 and pi during the duration of Pulse2, which is reflected by a2 x 2MMI Reflector and enters the Laser 1.
(2) The current drive unit connected to SOA1 is controlled to emit electrical pulses at twice the repetition rate of the electrical pulses emitted by the current drive unit connected to SOA2 and for a duration greater than one cycle of the electrical pulses of the current drive unit connected to SOA 1.
(3) The effect of sending only Pulse11 located at the earlier position or Pulse12 located at the later position is obtained by controlling the electrical delays of the two current driving units so that SOA1 is driven after Pulse2 enters Laser1 so that Laser1 continuously emits optical pulses Pulse11 and Pulse12 during the injection time of Pulse2, or by controlling whether the current driving unit connected to SOA1 sends electrical pulses. The light pulse emitted in Laser1 is then Output by Output 1. Thereby creating an out-injection-lock phenomenon (i.e., Laser1 is injection locked).
(4) The electrical delays of the two current driving units are determined by the optical distances of the SOA1 and SOA2 on the chip, respectively, so that the electric Pulse emitted by the current driving unit connected to the SOA1 starts to drive the SOA1 to emit light after the Pulse2 enters the SOA 1.
According to the external injection locking principle, finally, as the phase difference between the front and back light pulses output from Laser1 is determined by Pulse2, and whether Laser1 has Pulse output on Pulse11 and Pulse12 or not can be regulated and controlled by the current driving unit connected with SOA1, four light quantum states required by time phase coding can be generated in the modulation mode, as shown in fig. 5. Wherein, the state 1 is output by the light Pulse11 and output by the no light Pulse 2; the state 2 is that the light Pulse12 is output, and the light Pulse1 is not output; in the state 3, the phase difference between the output light pulses Pulse11 and Pulse2 is 0; the phase difference between the output light pulses Pulse11 and Pulse2 in state 4 is pi.
The structure of the transmitting end of the quantum key distribution system which can be realized by the second and third specific modulation methods is shown in fig. 6. Compared with fig. 3, since the phase or time of the output light pulse is directly modulated by changing the electrical pulse properties of the two current driving units, various QKD systems operating phase-coding and time-phase-coding can be performed without an additional optical pulse modulation module in the system.
Example 2: the embodiment further provides an off-chip injection laser structure (a structure belonging to an on-chip coupled cavity laser), as shown in fig. 7, the off-chip injection laser structure comprises an integrated optical chip, and a first semiconductor optical amplifier (SOA1), a second semiconductor optical amplifier (SOA2), a first distributed bragg reflector (DBR1), a second distributed bragg reflector (DBR2) and a reflection output device are integrated on the integrated optical chip, wherein the reflection output device adopts a third distributed bragg reflector (DBR 3). The first semiconductor optical amplifier and the first distributed Bragg reflector are connected through an optical waveguide, the second semiconductor optical amplifier and the second distributed Bragg reflector are connected through an optical waveguide, and the first semiconductor optical amplifier and the second semiconductor optical amplifier are both connected with the third distributed Bragg reflector through an optical waveguide.
For this Laser structure, a DBR cavity mirror (i.e., DBR3) is used instead of 2 × 2MMIReflector in embodiment 1, where DBR1, SOA1 and DBR3 constitute Laser1, and DBR2, SOA2 and DBR3 constitute Laser2, which operates in the same principle as embodiment 1. With this cavity-coupled structure, two QKD system transmit-side examples as in fig. 8 and 9 can be realized, similar to embodiment 1.
To sum up, the utility model provides an on-chip injects laser structure and two kinds of quantum key distribution system transmitting terminals that contain this laser instrument into outward. The on-chip external injection laser structure can be applied to most QKD systems, and due to the external injection locking phenomenon, compared with a typical laser light source used in the QKD system, the optical pulse generated by the laser structure has the advantages of low time domain jitter, narrow frequency domain line width and the like, the transmitting end of the quantum key distribution system can reduce the system error rate, and various phase codes and state modulation of a time phase coding system can be completed without an external modulator by adjusting two current driving units in the on-chip external injection laser structure.
The protection scope of the present invention includes but is not limited to the above embodiments, the protection scope of the present invention is subject to the claims, and any replacement, deformation, and improvement that can be easily conceived by those skilled in the art made by the present technology all fall into the protection scope of the present invention.
Claims (9)
1. The utility model provides an on-chip injects laser structure outward, its characterized in that, includes integrated optical chip, integrated semiconductor optical amplifier one, semiconductor optical amplifier two, distributed Bragg reflector one, distributed Bragg reflector two and reflection output device on the integrated optical chip, semiconductor optical amplifier one and distributed Bragg reflector one pass through the optical waveguide line and connect, and semiconductor optical amplifier two and distributed Bragg reflector two pass through the optical waveguide line and connect, semiconductor optical amplifier one and semiconductor optical amplifier two all pass through the optical waveguide line with reflection output device and are connected.
2. The on-chip and off-chip injection laser structure of claim 1, wherein the reflective output device is a two-in-two-out multimode interferometer.
3. The on-chip and off-chip injection laser structure of claim 1, wherein the reflective output device employs a third DBR mirror.
4. A quantum key distribution system transmitting terminal, comprising the on-chip and external injection laser structure, the decoy state and attenuation module, the light source monitoring module and the current driving unit as claimed in claim 2, wherein the decoy state and attenuation module and the light source monitoring module are integrated on the integrated optical chip, the current driving unit is located outside the integrated optical chip, the first distributed Bragg reflector in the on-chip and external injection laser structure is connected with the decoy state and attenuation module through the optical waveguide, the second distributed Bragg reflector in the on-chip and external injection laser structure is connected with the light source monitoring module through the optical waveguide, and the first semiconductor optical amplifier and the second semiconductor optical amplifier are respectively connected with the current driving unit.
5. The quantum key distribution system transmitting end of claim 4, wherein the decoy state and attenuation module employs an intensity modulator and an attenuator; the light source monitoring module adopts a strong light detector.
6. The quantum key distribution system transmitting terminal according to claim 4, further comprising an optical pulse modulation module, wherein the first Distributed Bragg Reflector (DBR) mirror of the on-chip and off-chip injection laser structure is connected with the decoy state and the attenuation module through the optical pulse modulation module.
7. A quantum key distribution system transmitting terminal, comprising the on-chip and outside injection laser structure, the decoy state and attenuation module, the light source monitoring module and the current driving unit as claimed in claim 3, wherein the decoy state and attenuation module and the light source monitoring module are integrated on the integrated optical chip, the current driving unit is located outside the integrated optical chip, the first distributed Bragg reflector in the on-chip and outside injection laser structure is connected with the decoy state and attenuation module through the optical waveguide, the second distributed Bragg reflector in the on-chip and outside injection laser structure is connected with the light source monitoring module through the optical waveguide, and the first semiconductor optical amplifier and the second semiconductor optical amplifier are respectively connected with the current driving unit.
8. The quantum key distribution system transmitting end of claim 7, wherein the decoy state and attenuation module employs an intensity modulator and an attenuator; the light source monitoring module adopts a strong light detector.
9. The quantum key distribution system transmitting terminal of claim 7, further comprising an optical pulse modulation module, wherein the first distributed bragg reflector (dbr) in the on-chip and off-chip injection laser structure is connected with the decoy state and the attenuation module through the optical pulse modulation module.
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