CN209747482U - Silicon wafer adsorption device and laser annealing equipment - Google Patents
Silicon wafer adsorption device and laser annealing equipment Download PDFInfo
- Publication number
- CN209747482U CN209747482U CN201920942568.3U CN201920942568U CN209747482U CN 209747482 U CN209747482 U CN 209747482U CN 201920942568 U CN201920942568 U CN 201920942568U CN 209747482 U CN209747482 U CN 209747482U
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- region
- adsorption
- identification
- mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The utility model discloses a silicon chip adsorption equipment and laser annealing equipment, this silicon chip adsorption equipment have the adsorption plane that can adsorb the silicon chip, and the adsorption plane includes adsorption zone territory and sign region, and adsorption zone territory is configured to can adsorb fixed silicon chip, and the sign region territory sets up with adsorption zone territory is adjacent, and the silicon chip is adsorbed the regional fixed back that adsorbs, and the marginal part of silicon chip falls into in the sign region at least, and the sign region has different machine recognition degree with the silicon chip. The silicon wafer adsorption device can improve the silicon wafer edge extraction precision and efficiency, has high alignment efficiency of the silicon wafer and the sucker, and is beneficial to improving the productivity of laser annealing equipment. Correspondingly, the utility model also provides a laser annealing equipment.
Description
Technical Field
The utility model relates to an integrated circuit makes the field, especially relates to a silicon chip adsorption equipment and laser annealing equipment.
Background
In the laser annealing process, the edge of the silicon wafer needs to be accurately identified to ensure the precision of the laser annealing process. The sucking disc of traditional laser annealing equipment is the carborundum material, and the colour of carborundum sucking disc is the same with the colour of silicon chip (mostly be the chromogenic, use black as leading to), makes detecting device hardly distinguish silicon chip and sucking disc, can't differentiate the position of silicon chip and sucking disc, and the silicon chip edge extraction precision is low, leads to the silicon chip to aim at the success rate lower, need debug the calibration many times repeatedly, and the silicon chip is aimed at inefficiency with the sucking disc, influences laser annealing equipment productivity.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a silicon chip adsorption equipment can improve silicon chip edge and draw precision and efficiency, and the silicon chip is aimed at efficiently with the sucking disc, is favorable to improving laser annealing equipment productivity.
Another object of the utility model is to provide a laser annealing equipment can improve the silicon chip and the sucking disc and aim at efficiency, and the equipment productivity is high.
To achieve the purpose, on one hand, the utility model adopts the following technical scheme:
The utility model provides a silicon chip adsorption equipment, this silicon chip adsorption equipment has the adsorption plane that can adsorb the silicon chip, and the adsorption plane includes adsorption zone territory and sign region, and adsorption zone territory is configured to can adsorb fixed silicon chip, and sign region territory and adsorption zone territory adjacent setting, after the silicon chip is adsorbed by adsorption zone territory and is fixed, the edge of silicon chip partially at least falls into in the sign region, and the sign region has different machine recognition degrees with the silicon chip.
In one embodiment, the different degrees of machine recognition include color difference recognition and/or light reflectance difference recognition; the color of the identification area is different from that of the silicon wafer; and/or the mark region has a light reflectivity different from the light reflectivity of the silicon wafer.
In one embodiment, the color of the logo area is white, gold, silver or yellow.
In one embodiment, the reflectivity of the mark area to light with the wavelength of 400 nm-800 nm reaches more than 40%.
In one embodiment, the marker region is made of at least one of ceramic steel oxide, die steel, and zirconia.
In one embodiment, the marking area is annular, and at least one notch is radially formed in the annular marking area.
In one embodiment, the width of the notch is 0.2mm to 3 mm.
In one embodiment, the silicon wafer adsorption device further includes a base, the annular identification region includes an identification ring, an annular mounting region is disposed on the base, and the identification ring is disposed in the mounting region.
In one embodiment, the identification ring is secured within the mounting area by adhesive or mechanical fastening.
In one embodiment, after the silicon wafer is adsorbed and fixed by the adsorption area, at least three edge points of the edge of the silicon wafer fall into the mark area.
In one embodiment, the feeding direction of the silicon wafer is 0 degrees, and after the silicon wafer is adsorbed and fixed by the adsorption area, the edge of the silicon wafer is positioned at edge points of 0 degrees, 90 degrees, 180 degrees and 270 degrees; and/or edge points of the edge of the silicon wafer at 45 DEG, 135 DEG, 225 DEG and 315 DEG fall within the mark region.
In one embodiment, after the silicon wafer is adsorbed and fixed by the adsorption area, the positioning opening of the silicon wafer falls into the identification area.
In one embodiment, the surface height of the label region is the same as the surface height of the suction region.
In one embodiment, the marker region comprises a plurality of marker rings arranged in an axial stack.
In one embodiment, the plurality of identification rings are adhesively attached to one another.
In one embodiment, the radial width of the identification region is not unique.
on the other hand, the utility model also provides a laser annealing equipment, including the silicon chip adsorption equipment of above-mentioned arbitrary item.
The silicon wafer adsorption device comprises the identification area which is arranged adjacent to the adsorption area, the identification area and the silicon wafer have different machine identification degrees, after the silicon wafer is adsorbed and fixed by the adsorption area, at least part of the edge of the silicon wafer falls into the identification area, and the identification area is different from the machine identification degree of the silicon wafer, so that the detection device can quickly and accurately identify the edge of the silicon wafer, the silicon wafer edge extraction precision and efficiency can be effectively improved, the alignment efficiency of the silicon wafer and a sucker is further improved, and the productivity of laser annealing equipment is improved.
The laser annealing equipment has the beneficial effects of high alignment efficiency of the silicon wafer and the sucker and high equipment productivity by applying the silicon wafer adsorption device.
Drawings
FIG. 1 is a schematic view showing the structure of a silicon wafer adsorption apparatus in one embodiment;
FIG. 2 is a sectional view showing the structure of a silicon wafer suction apparatus in one embodiment;
FIG. 3 is a schematic diagram of the structure of an identification ring in one embodiment.
In the figure:
10-adsorption surface, 20-base, 11-adsorption area, 12-marking area, 121-gap and 122-marking ring.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments with reference to the accompanying drawings.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Referring to fig. 1 to 3, a silicon wafer adsorbing device according to an embodiment includes an adsorbing surface 10 capable of adsorbing a silicon wafer, where the adsorbing surface 10 includes an adsorbing region 11 and a mark region 12, the adsorbing region 11 is configured to be capable of adsorbing and fixing the silicon wafer, the mark region 12 is disposed adjacent to the adsorbing region 11, after the silicon wafer is adsorbed and fixed by the adsorbing region 11, at least a portion of an edge of the silicon wafer falls into the mark region 12, and the mark region 12 and the silicon wafer have different machine recognition degrees.
The silicon wafer adsorption device comprises the identification area 12 which is arranged adjacent to the adsorption area 11, the identification area 12 and the silicon wafer have different machine recognition degrees, after the silicon wafer is adsorbed and fixed by the adsorption area 11, at least part of the edge of the silicon wafer falls into the identification area 12, and the identification area 12 and the silicon wafer have different machine recognition degrees, so that the detection device can quickly and accurately recognize the edge of the silicon wafer, the silicon wafer edge extraction precision and efficiency can be effectively improved, the silicon wafer and sucker alignment efficiency is further improved, and the productivity of laser annealing equipment is improved. Specifically, in this scheme, the machine recognition degree mainly refers to a machine vision recognition degree.
In one embodiment, the different machine-recognition degrees include light reflectance difference recognition, with the light reflectance difference providing the different machine-recognition degrees between the identification region 12 and the silicon wafer. The light reflectivity of the mark area 12 is different from that of the silicon wafer, different light reflection differences can be formed between the edge of the silicon wafer and the mark area 12 after the silicon wafer is adsorbed and fixed, the silicon wafer can be conveniently identified by a detection device, and the edge of the silicon wafer can be rapidly and accurately identified by the detection device. Specifically, in one embodiment, the light reflectivity of the identification area 12 is at least 40% or more, and more preferably, the light reflectivity of the identification area 12 may be 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%. Specifically, in one embodiment, the light reflectivity of the logo area 12 is for light having a wavelength of 400nm to 800nm, and more specifically, may be for light having a wavelength of 450nm to 550 nm.
In yet another embodiment, the different degrees of machine recognition include color difference recognition, with the color difference providing the different degrees of machine recognition between the logo area 12 and the silicon die. The color of the mark area 12 is different from that of the silicon wafer, the mark area 12 is made of a material with a color different from that of the silicon wafer, so that the mark area 12 and the silicon wafer have obvious color difference to be convenient for a detection device to identify, the color difference is formed between the edge of the silicon wafer and the mark area 12 after the silicon wafer is adsorbed and fixed, and the detection device can quickly and accurately identify the edge of the silicon wafer. Specifically, in one embodiment, the color of the logo area 12 is white, gold, silver, or yellow.
In the above embodiments, different machine recognizability is provided by the difference of light reflectivity or color difference, and the marking region 12 and the silicon wafer have different light reflectivity or color to form different machine recognizability. However, in other embodiments, the machine recognition degree may also include both color and light reflectivity, and different machine recognition degrees are provided by the light reflectivity difference and the color difference, and the light reflectivity and the color of the mark region 12 are different from those of the silicon wafer, so as to enhance the machine recognition degree and further ensure the extraction accuracy and efficiency of the silicon wafer edge. Specifically, the marking zone 12 is preferably made of a metallic material having a low coefficient of thermal expansion, which is effective in providing machine contrast while having good durability. Further, in one embodiment, the marker region 12 is made of at least one of ceramic oxide steel, die steel, and zirconia.
In one embodiment, the marking region 12 is annular, and at least one notch 121 is radially formed on the annular marking region 12. Specifically, the gap 121 can perform expansion deformation compensation when the identification region 12 is heated and expanded, so that interference between the identification region 12 and the adsorption region 11 caused by temperature rise in the laser annealing process is avoided, the reliability of the silicon wafer adsorption device is improved, and the accuracy of silicon wafer alignment is further improved.
In one embodiment, the width of the gap 121 is 0.2mm to 3 mm. Specifically, in an embodiment, the width of the notch 121 is gradually changed at regular intervals between 0.2mm and 3mm, for example, in an embodiment, the width of the notch 121 is gradually changed at 0.05mm, the width of the notch 121 is any value between 0.2mm, 0.25mm, and 0.3mm … 3mm, in other embodiments, the width of the notch 121 may also be gradually changed at 0.1mm, 0.2mm, or other values, and this embodiment is not limited in particular. Further, in one embodiment, the width of the notch 121 is 1 mm.
In one embodiment, the silicon wafer adsorption device further comprises a base 20, the annular mark region 12 comprises a mark ring 122, an annular mounting region is arranged on the base 20, and the mark ring 122 is arranged in the mounting region. Specifically, the identification region 12 includes an identification ring 122, the adsorption region 11 includes a suction cup, specifically, the suction cup may be but is not limited to a micro-hole suction cup, the suction cup is disposed on the base 20, the annular mounting region on the base 20 is an annular mounting groove around the outside of the suction cup, and the identification ring 122 is disposed in the mounting groove and around the outer ring of the suction cup. The silicon wafer adsorption device is simple in structure and convenient to install. When the silicon wafer adsorption device is installed, the sucker is fixedly installed on the base 20, and then the identification ring 122 is installed in the installation groove and the identification ring 122 is fixed to the base 20.
In one embodiment, the identification ring 122 is secured within the mounting area by gluing, and the identification ring 122 is adhesively attached to the base 20 to ensure that the identification ring 122 is securely mounted. Further, in other embodiments, the identification ring 122 may also be fixed in the installation area by a mechanical fixing manner, such as a bolt fastening, a clamping, or a riveting, any fixing manner that can fix the identification ring 122 on the base 20 in the prior art should fall within the protection scope of the present invention, and the above embodiments are not limited in particular.
In one embodiment, after the silicon wafer is adsorbed and fixed by the adsorption area 11, at least three edge points of the edge of the silicon wafer fall into the mark area 12 when viewed from the machine vision direction. Specifically, the three edge points refer to three edge points that are machine-visually distinguishable. Furthermore, the marking area 12 may be at least 1 triangle, quadrangle, polygon, circle, ellipse, a segment of a circle, or may be various irregular structures. Specifically, to ensure the accuracy of the wafer edge extraction, the mark region 12 needs to cover the wafer edge as uniformly as possible. In the process of assembling the silicon wafer adsorption device, if the concentric arrangement of the mark ring 122 and the suction cup can be ensured, the edge of the silicon wafer can be ensured to fall into the mark region 12 after the silicon wafer is adsorbed and fixed. However, the concentric alignment of the identification ring 122 with the suction cup is complicated, which affects the efficiency of installation. In this embodiment, the mark region 12 covers at least three edge points of the silicon wafer, after the silicon wafer is adsorbed and fixed by the adsorption region 11, at least three edge points of the edge of the silicon wafer fall into the mark region 12, and the center of the circle of the silicon wafer can be determined through the at least three edge points, so that the edge of the silicon wafer can be determined. In this embodiment, in the assembly process of the silicon wafer adsorption device, it is only required to ensure that the identification region 12 can cover at least three edge points of the silicon wafer after being installed, and the complex concentric alignment operation of the identification ring 122 and the suction cup is not required, so that the silicon wafer edge extraction accuracy can be ensured, and the improvement of the installation efficiency of the silicon wafer adsorption device is facilitated.
In one embodiment, the silicon wafer is loaded in the direction of 0 °, and after the silicon wafer is adsorbed and fixed by the adsorption region 11, edge points of the edge of the silicon wafer at 0 °, 90 °, 180 °, and 270 ° or edge points of the edge of the silicon wafer at 45 °, 135 °, 225 °, and 315 ° fall into the mark region 12. Generally, a silicon wafer is loaded at 0 degree or 45 degrees, in this embodiment, the mark region 12 is set at a position where four silicon wafer edge points are located at intervals of 90 degrees with the loading direction as a reference point after the silicon wafer is adsorbed and fixed, and the mark region 12 covers the four edge points distributed in a cross shape, so that the position of the center of a circle of the silicon wafer can be conveniently and quickly determined, and the efficiency and the accuracy of extracting the edge of the silicon wafer are ensured.
Further, in an embodiment, the mark region 12 may be further configured to correspond to eight edge points at the same time, that is, after the silicon wafer is adsorbed and fixed by the adsorption region 11, edge points of the edge of the silicon wafer at 0 °, 90 °, 180 °, and 270 ° and edge points of the edge of the silicon wafer at 45 °, 135 °, 225 °, and 315 ° all fall into the mark region 12, so that the silicon wafer edge extraction operation can be performed quickly and accurately regardless of the 0 ° or 45 ° loading, which is beneficial to improving the universality of the silicon wafer adsorption apparatus.
Further, in one embodiment, after the silicon wafer is adsorbed and fixed by the adsorption region 11, the positioning opening of the silicon wafer falls into the mark region 12. Generally, the silicon wafer is provided with the positioning port, and therefore, the distribution of the identification region 12 needs to consider the identification of the edge of the positioning port, in this embodiment, the identification region 12 is arranged at the position where the positioning port is located after the silicon wafer is adsorbed and fixed, and after the silicon wafer is adsorbed and fixed by the adsorption region, the positioning port of the silicon wafer falls into the identification region 12, so that the edge of the positioning port can be accurately identified and extracted, and the extraction precision of the edge of the silicon wafer is ensured.
in one embodiment, to ensure alignment accuracy and wafer chucking stability, the surface height of the mark region 12 is the same as the surface height of the chucking region 22.
In one embodiment, the identification region 12 includes a plurality of identification rings 122 stacked axially, and the plurality of identification rings 122 are stacked axially, so that the number of the identification rings 122 can be increased or decreased according to the thickness of the suction cup, and the thickness of the identification region 12 is the same as that of the suction cup, and the identification rings 122 with different thickness specifications do not need to be manufactured, and the identification region can be adapted to the suction cups with different thickness dimensions by increasing or decreasing the number of the identification rings 122, which is beneficial to saving cost.
Further, in one embodiment, the plurality of identification rings 122 are adhesively connected to each other to ensure a stable and reliable connection between the plurality of identification rings 122 stacked in the axial direction. Of course, in other embodiments, the plurality of identification rings 122 may be connected and fixed by fastening bolts or clamping, and the embodiment is not limited in particular.
In one embodiment, the radial width of the identification region 12 is not unique. Specifically, the radial width of the mark region 12 varies along with the laser scanning path, the width of the mark region 12 in the laser scanning path region is smaller than the width of the mark region in the non-laser scanning path region, and the width of the mark region 12 in the laser scanning path region is narrower, so that a gap is formed between the mark region 12 in the laser scanning path region and the adsorption region 11, and thus, the radial interference between the adsorption region 11 and the expansion deformation of the mark region 12 caused by the temperature rise in the laser scanning process can be avoided.
When the silicon wafer adsorption device works, a silicon wafer is placed on the sucker through the mechanical arm, vacuum passes through the micropores on the sucker through the vent holes on the base 20 to adsorb the silicon wafer on the sucker, then the whole machine is pre-aligned, the identification of the edge of the silicon wafer is facilitated due to the fact that the identification ring 122 and the sucker have obvious chromatic aberration, and the whole machine is subjected to laser annealing after the silicon wafer and the sucker are quickly and accurately aligned. The heat generated during laser annealing can make the identification ring 122 generate expansion deformation, the gap 121 compensates the expansion deformation of the identification ring 122, and the interference of the identification ring 122 with the sucker and the base 20 due to the expansion deformation is avoided.
The utility model also provides a laser annealing equipment, including foretell silicon chip adsorption equipment. The laser annealing equipment of this embodiment has the silicon chip and the sucking disc through using above-mentioned silicon chip adsorption equipment and aim at efficiently, the high beneficial effect of equipment productivity.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (17)
1. A silicon wafer adsorption apparatus, the silicon wafer adsorption apparatus has an adsorption surface (10) capable of adsorbing a silicon wafer, the adsorption surface (10) comprises an adsorption region (11) and a mark region (12), the adsorption region (11) is configured to be capable of adsorbing and fixing the silicon wafer, the mark region (12) is arranged adjacent to the adsorption region (11), after the silicon wafer is adsorbed and fixed by the adsorption region (11), the edge of the silicon wafer at least partially falls into the mark region (12), and the mark region (12) and the silicon wafer have different machine recognition degrees.
2. The silicon wafer suction device according to claim 1, wherein the different degrees of machine recognition include color difference recognition and/or light reflectance difference recognition; the color of the marking area (12) is different from the color of the silicon wafer; and/or the light reflectivity of the marking area (12) is different from the light reflectivity of the silicon wafer.
3. the silicon wafer suction device according to claim 2, wherein the color of the identification region (12) is white, gold, silver or yellow.
4. the silicon wafer adsorption device according to claim 2, wherein the mark region (12) has a reflectance of 40% or more with respect to light having a wavelength of 400nm to 800 nm.
5. The silicon wafer suction device according to claim 2, wherein the identification region (12) is made of at least one of ceramic steel oxide, die steel and zirconia.
6. The silicon wafer adsorption device of any one of claims 1 to 5, wherein the mark region (12) is annular, and at least one notch (121) is radially formed in the annular mark region (12).
7. The silicon wafer suction device according to claim 6, wherein the width of the notch (121) is 0.2mm to 3 mm.
8. The silicon wafer suction device according to claim 6, further comprising a base (20), wherein the annular mark region (12) comprises a mark ring (122), an annular mounting region is arranged on the base (20), and the mark ring (122) is arranged in the mounting region.
9. The silicon wafer suction device according to claim 8, wherein the identification ring (122) is fixed in the mounting region by gluing or mechanical fixing.
10. The silicon wafer suction device according to any one of claims 1 to 5, wherein after the silicon wafer is sucked and fixed by the suction region (11), at least three edge points of the edge of the silicon wafer fall into the mark region (12).
11. The silicon wafer suction device according to any one of claims 1 to 5, wherein the silicon wafer is held in the feeding direction of 0 °, and after the silicon wafer is sucked and fixed by the suction region (11), the edge of the silicon wafer is located at edge points of 0 °, 90 °, 180 ° and 270 °; and/or edge points of the edge of the silicon slice at 45 DEG, 135 DEG, 225 DEG and 315 DEG fall within the identification area (12).
12. The silicon wafer suction device according to any one of claims 1 to 5, wherein the positioning opening of the silicon wafer falls into the mark region (12) after the silicon wafer is sucked and fixed by the suction region (11).
13. The silicon wafer suction device according to any one of claims 1 to 5, wherein the surface height of the identification region (12) is the same as the surface height of the suction region (11).
14. The silicon wafer suction device according to claim 13, wherein the identification region (12) comprises a plurality of identification rings (122) arranged one above the other in the axial direction.
15. The silicon wafer suction device according to claim 14, wherein a plurality of the identification rings (122) are adhesively connected to each other.
16. The wafer suction device according to any one of claims 1 to 5, characterized in that the radial width of the identification area (12) is not unique.
17. A laser annealing apparatus comprising the silicon wafer adsorbing device according to any one of claims 1 to 16.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920942568.3U CN209747482U (en) | 2019-06-21 | 2019-06-21 | Silicon wafer adsorption device and laser annealing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920942568.3U CN209747482U (en) | 2019-06-21 | 2019-06-21 | Silicon wafer adsorption device and laser annealing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209747482U true CN209747482U (en) | 2019-12-06 |
Family
ID=68723900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920942568.3U Active CN209747482U (en) | 2019-06-21 | 2019-06-21 | Silicon wafer adsorption device and laser annealing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209747482U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112117209A (en) * | 2019-06-21 | 2020-12-22 | 上海微电子装备（集团）股份有限公司 | Silicon wafer adsorption device and laser annealing equipment |
-
2019
- 2019-06-21 CN CN201920942568.3U patent/CN209747482U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112117209A (en) * | 2019-06-21 | 2020-12-22 | 上海微电子装备（集团）股份有限公司 | Silicon wafer adsorption device and laser annealing equipment |
| WO2020253215A1 (en) * | 2019-06-21 | 2020-12-24 | 上海微电子装备（集团）股份有限公司 | Silicon wafer adsorption device and laser annealing apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100778425B1 (en) | Apparatus for fixing a semiconductor wafer by suction | |
| KR100766512B1 (en) | Method and device of peeling semiconductor device | |
| KR101623398B1 (en) | Alignment apparatus for semiconductor wafer | |
| US6352073B1 (en) | Semiconductor manufacturing equipment | |
| CN209747482U (en) | Silicon wafer adsorption device and laser annealing equipment | |
| KR20100082312A (en) | Alignment apparatus for semiconductor wafer | |
| JP7023590B2 (en) | Semiconductor chip pickup and mounting equipment | |
| JP2000208447A (en) | Semiconductor manufacturing apparatus and manufacture of semiconductor device | |
| CN112117209A (en) | Silicon wafer adsorption device and laser annealing equipment | |
| KR20150120032A (en) | Die bonding apparatus | |
| CN111725107B (en) | Semiconductor process equipment and process chamber thereof | |
| US10388610B2 (en) | Electronic chip inspection by backside illumination | |
| WO2015059749A1 (en) | Pickup device and push-up pot | |
| JP6201400B2 (en) | Suction plate for semiconductor wafer process | |
| CN103222042B (en) | For separating of the carrier of formula electronic device and the method for visual inspection of separate type electronic device | |
| CN216757269U (en) | Wafer flatness detection and sorting device | |
| US6972486B2 (en) | Low profile carrier for non-wafer form device testing | |
| CN212277150U (en) | Sample stage and electron microscope | |
| CN110556312B (en) | Die bonding method | |
| CN108872260B (en) | Wafer detection tool and wafer detection device | |
| JPH09162205A (en) | Pickup device | |
| CN214848562U (en) | Thimble and suction means | |
| CN220627772U (en) | Wafer adsorption platform capable of breaking vacuum in real time | |
| KR20240008561A (en) | Die Ejectors and Die Ejecting Devices | |
| CN213073223U (en) | Substrate carrier, chip mounter and wire bonding machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |