CN209728210U - A kind of device for modulating two dimensional crystal forbidden band fluorescence polarization - Google Patents
A kind of device for modulating two dimensional crystal forbidden band fluorescence polarization Download PDFInfo
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- CN209728210U CN209728210U CN201920363076.9U CN201920363076U CN209728210U CN 209728210 U CN209728210 U CN 209728210U CN 201920363076 U CN201920363076 U CN 201920363076U CN 209728210 U CN209728210 U CN 209728210U
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Abstract
The utility model discloses a kind of devices for modulating two dimensional crystal forbidden band fluorescence polarization, which includes: a high conductive material substrate；The insulating layer formed on high conductive material substrate；The two dimensional crystal single layer being formed on the insulating layer；The light transmission medium layer formed on two dimensional crystal single layer；And the metal nano Meta Materials with periodic cells structure formed on light transmission medium layer.The utility model is based on metal surface plasmon resonance principle, regulates and controls semiconductor fluorescence field using metal nano Meta Materials anisotropy resonant fields, realizes polarized fluorescence and reaches the adjustable purpose of polarization.The utility model modulates the device of two dimensional crystal forbidden band fluorescence polarization, has effectively widened the linear adjustable extent and temperature applicable range of two dimensional crystal forbidden band fluorescence.
Description
Technical field
The utility model belongs to nano-optoelectronic technology field, and in particular to a kind of modulation two dimensional crystal forbidden band fluorescence polarization
The device of property.
Background technique
The adjustable micro-nano light source of polarity information security, highly sensitive sensing, structural analysis, in terms of have
Peculiar advantage.In recent years the New Two Dimensional crystal risen has extensive directly forbidden band selectivity, structural stability, Tunability
With substrate diversity, has the excellent condition of on piece micro-nano light source.But due to the polarization randomness of fluorescence at room temperature limit it is micro-
Receive the application range of light source, it is therefore desirable to which Polarization Modulation is carried out on piece light source.
Macroscopical optical path is using polarizing film and devating prism come the polarization of modulation light.Polarizing film is mainly by Pva Polarizing Film
In the compound transparent Triafol T protective film composition of upper and lower surface.The main component of Pva Polarizing Film is polyethylene
Pure and mild iodine is made of wet process drawing process.Typical technical process is: firstly, being made saturating with the tape casting or extrusion by melting
Bright polyvinyl alcohol thick film, is dipped in the compound solution containing iodine and reacts, and carries out iodine staining to film；Then, in difference
Between the roller of speed rotation, by certain direction by 3~5 times of PVA film simple tension, keep polyvinyl alcohol molecule key height-oriented,
The iodine molecule being embedded is oriented simultaneously, makes it have dichroism, absorbs polarization direction light point identical with draw direction
Amount transmits the light component vertical with draw direction.Since Pva Polarizing Film deforms quickly in the environment of warm, receives
Contracting, relaxation, decline etc., and intensity is very low, matter it is crisp it is fragile, be not convenient to use and process.Therefore following table face paste on it is needed
Attach that the hot good, intensity of high transparency, heatproof is high and the Triafol T protective film of optical isotropy.This makes to polarize
Piece enlarged in thickness cannot be directly integrated on photonic device.In addition, polarizer can also by dichroism crystal, such as calcite,
It requires to be designed according to distinctive Aspect Ratio and end plane angle, cut, polishing and assemble.Although devating prism preparation
Polarizer has the advantage that extinction ratio is high, transmissivity is high and damage threshold is high.But its block-like crystal characteristic, so that it is in micro-nano
Practicability and compatibility in photonic system is very low.Therefore, whether from material structure or processing technology, conventional polarization member
Part is not all suitable for photon chip.
It is different from macroscopical optical element, on piece photonic device is modulated with its distinctive theoretical basis and working method.Two
Crystallofluorescence polarizability modulation aspect is tieed up, forefathers are studied using temperature and magnetic field as two kinds of modulation means.Firstly, low
Under temperature, linear polarization fluorescence can produce using two dimensional crystal paddy polarity effect.The polarization of two dimensional crystal paddy refers to single layer crystal because of center
Symmetry breaking forms two paddy (K in the space K+And K-).The two paddy can be circularly polarized optical detection, by extraneous circularly polarized laser
When excitation, the circular polarization fluorescence of respective attributes can be emitted.Because linearly polarized light is the coherent superposition of left and right optically-active, so when using line
When polarised light excites two dimensional crystal, left and right rotation therein is had an effect with left and right paddy respectively at branch, makes left and right paddy electron synchrotron
When from respective valence band jump to conduction band, issue left and right rotation fluorescence, the two coherent superposition forms linear polarization fluorescence.The process occurs to need
Meet an essential condition, i.e., the decoherence time of left and right paddy exciton is greater than electron-hole recombination time.Conversely, in electronics
Decoherence then can only obtain random polarization fluorescence to hole-recombination front left and right paddy exciton.Temperature is higher, caused by phonon-resonant
Intervalley scattering is stronger, and the decoherence time is shorter, this is to polarize the main reason for random at room temperature.The lower intervalley scattering of temperature is more
Small, the decoherence time is longer, and photoluminescence line bias is better.Using this principle, at extremely low temperature 30K, related work has been measured
The 35% fluorescence linearity.Secondly, the optical axis of the offline polarized fluorescence of low temperature and the optical axis of excitation laser are eternal when magnetic field is not added
Keeping parallelism；When adding a magnetic field perpendicular to two dimensional crystal surface, the polarization direction of linear polarization fluorescence can be by paddy Zeeman
It divides the influence of effect and deflects, while degree of polarization drops to 16%.It can be seen that temperature and magnetic field are modulation two dimensional crystals
The feasible means of fluorescence polarization.But both methods the shortcomings that having its own and limitation: first is that fluorescence polarization modulation forces
It spends small；Second is that under extreme condition, it is difficult to be widely applied.
Utility model content
(1) technical problems to be solved
The shortcomings that overcome above-mentioned modulator approach and deficiency, the utility model proposes using anisotropy Meta Materials modulation two
Tie up the device of crystal forbidden band fluorescence polarization, Polarization Modulation dynamics to solve two dimensional crystal forbidden band fluorescence is small, by temperature limiting
The problem of.
(2) technical solution
The utility model provides the device that a kind of pair of two dimensional crystal forbidden band fluorescence polarization is modulated, the structure packet
It includes:
One high conductive material substrate；
The insulating layer formed on the high conductive material substrate；
The two dimensional crystal single layer being formed on the insulating layer；
The light transmission medium layer formed on the two dimensional crystal single layer；And
The metal nano Meta Materials with periodic cells structure formed on the light transmission medium layer.
Wherein, the high conductive material substrate is highly doped silicon or metal, with a thickness of 500-750 μm, the highly conductive material
Material plays the role of structural support, and reflects the two dimensional crystal single fluorescent；
Wherein, the insulating layer is SiO2、Al2O3, with a thickness of 270-310nm, the insulating layer is as two dimensional crystal single layer
Growth substrates；
Wherein, the two dimensional crystal single layer is Transition-metal dichalcogenide MX2, wherein M=Mo, W；X=S, Se, Te；
The two dimensional crystal thickness in monolayer is less than 1nm, and the two dimensional crystal single layer emits fluorescence under the excitation of pump light；
Wherein, the light transmission medium layer is Al2O3Or SiO2, with a thickness of 10-50nm, the thickness shadow of the light transmission medium layer
Resonance Transmission and absorption of the metal nano Meta Materials at exciting field are rung, fluorescence intensity is modulated, and the light transmission
Dielectric layer protects two dimensional crystal material, from the influence of water, oxygen or foreign ion；
Wherein, the metal nano Meta Materials are the nanostructures of the metals such as gold, silver, aluminium, with a thickness of 30-100nm.
Wherein, the metal nano Meta Materials with periodic cells structure have line style, V-type or N-type air-gap knot
Structure；The V-type or N-type air-gap structure and the angle of horizontal direction are air-gap inclination angle theta.
(3) beneficial effect
It can be seen from the above technical proposal that the utility model proposes two dimensional crystal forbidden band fluorescence polarization is adjusted
The device of system, has the advantages that
(1) device provided by the utility model that two dimensional crystal forbidden band fluorescence polarization is modulated, using Meta Materials
Two dimensional crystal forbidden band fluorescence polarization is modulated, since Meta Materials surface plasmon resonance is light and Meta Materials surface electricity
The collective resonance behavior of son, is not affected by temperature, thus the utility model proposes polarization modulation method effectively to widen temperature suitable
Use range.
(2) device provided by the utility model being modulated to two dimensional crystal forbidden band fluorescence polarization is tied by optimization
Structure design, adjusts the degree of coupling between Meta Materials mode of resonance and two dimensional crystal fluorescence, generates the fluorescence letter of the different linearities
Number, and then linearity adjustable extent can be widened.
(3) device provided by the utility model that two dimensional crystal forbidden band fluorescence polarization is modulated, due to Meta Materials
Size is small, do not limited by optical diffraction limit and fixed point is integrated in suitable sheets, so that the size of the device is flexibly adjustable, is applicable in
It is integrated and micro-nano modulation of source on piece.Regulatable minimum area is determined by metamaterial structure unit, is measured at hundred nanometers squares
Grade provides device basis for chip-scale photonic device, system and functional development.
(4) device provided by the utility model that two dimensional crystal forbidden band fluorescence polarization is modulated, in preparation process
In, two dimensional crystal is isolated from the outside world by the light transmission medium layer as made from evaporation coating method, reduces the factors such as water, oxygen to two dimensional crystal
Influence, improve device lifetime.
(5) device provided by the utility model that two dimensional crystal forbidden band fluorescence polarization is modulated, two dimension therein
The substrate material of crystal has Mutiple Choice, has good compatibility with silicon based photon platform and micro-nano technology of preparing.
Detailed description of the invention
Fig. 1 is to illustrate according to the apparatus structure of the modulation two dimensional crystal forbidden band fluorescence polarization of the utility model embodiment
Figure.
Fig. 2 be according to the utility model proposes modulation two dimensional crystal forbidden band fluorescence polarization device preparation method process
Figure.
Fig. 3 is the test flow chart of the device of modulation two dimensional crystal forbidden band fluorescence polarization shown in Fig. 1.
Fig. 4 A is the WS according to an embodiment of the present invention2Single layer optical image.
Fig. 4 B is the WS according to an embodiment of the present invention2Fluorescent intensity figure of the single layer in the direction TE, TM.
Fig. 4 C is the WS according to an embodiment of the present invention2Single fluorescent peak value with shooting angle variation diagram.
Fig. 4 D is the WS according to an embodiment of the present invention2The single fluorescent linearity with wavelength of fluorescence change curve
Figure.
Fig. 5 A is to scheme according to the nanometer wiregrating SEM of the utility model embodiment.
Fig. 5 B is to be modulated according to the nanometer wiregrating of the utility model embodiment to two dimensional crystal forbidden band fluorescence polarization
Device the direction TE, TM fluorescence spectra.
Fig. 5 C is to be modulated according to the nanometer wiregrating of the utility model embodiment to two dimensional crystal forbidden band fluorescence polarization
Device photoluminescence peak with shooting angle variation diagram.
Fig. 5 D is to be modulated according to the nanometer wiregrating of the utility model embodiment to two dimensional crystal forbidden band fluorescence polarization
The device fluorescence linearity with wavelength of fluorescence change curve.
Fig. 6 is the V-type nanometer grid surface texture schematic diagram according to the utility model embodiment.
V-type metal nano grid SEM schemes when Fig. 7 A is θ=51 ° according to the utility model embodiment.
The direction V-type nanometer grid TE white light reflection spectrogram when Fig. 7 B is θ=51 ° according to the utility model embodiment.
V-type nanometer grid are to two dimensional crystal forbidden band fluorescence polarization when Fig. 7 C is θ=51 ° according to the utility model embodiment
Fluorescence spectra of the device being modulated in the direction TE, TM.
V-type nanometer grid are to two dimensional crystal forbidden band fluorescence polarization when Fig. 7 D is θ=51 ° according to the utility model embodiment
The device photoluminescence peak being modulated with shooting angle variation diagram.
The device fluorescence that V-type nanometer grid are modulated two dimensional crystal forbidden band fluorescence polarization when Fig. 7 E is θ=51 ° is linear
Spend the change curve with wavelength of fluorescence.
V-type metal nano grid SEM schemes when Fig. 8 A is θ=63 ° according to the utility model embodiment.
The direction V-type nanometer grid TE white light reflection spectrogram when Fig. 8 B is θ=63 ° according to the utility model embodiment.
V-type nanometer grid are to two dimensional crystal forbidden band fluorescence polarization when Fig. 8 C is θ=63 ° according to the utility model embodiment
Fluorescence spectra of the device being modulated in the direction TE, TM.
V-type nanometer grid are to two dimensional crystal forbidden band fluorescence polarization when Fig. 8 D is θ=63 ° according to the utility model embodiment
The device photoluminescence peak being modulated with shooting angle variation diagram.
V-type nanometer grid are to two dimensional crystal forbidden band fluorescence polarization when Fig. 8 E is θ=63 ° according to the utility model embodiment
The device fluorescence linearity being modulated with wavelength of fluorescence change curve.
Fig. 9 is the N-type nanometer grid surface texture schematic diagram according to the utility model embodiment.
Figure 10 A is to scheme according to N-type nanometer grid SEM when the utility model embodiment θ=30 °.
Figure 10 B is according to the direction N-type nanometer grid TE white light reflection spectrogram when the utility model embodiment θ=30 °.
Figure 10 C is according to N-type nanometer grid when the utility model embodiment θ=30 ° to two dimensional crystal forbidden band fluorescence polarization
Fluorescence spectra of the device being modulated in the direction TE, TM.
Figure 10 D is according to N-type nanometer grid when the utility model embodiment θ=30 ° to two dimensional crystal forbidden band fluorescence polarization
The device photoluminescence peak being modulated with shooting angle variation diagram.
Figure 10 E is according to N-type nanometer grid when the utility model embodiment θ=30 ° to two dimensional crystal forbidden band fluorescence polarization
The device fluorescence linearity being modulated with wavelength of fluorescence change curve.
Figure 11 A is to scheme according to N-type nanometer grid SEM when the utility model embodiment θ=45 °.
Figure 11 B is according to the direction N-type nanometer grid TE white light reflection spectrogram when the utility model embodiment θ=45 °.
Figure 11 C is according to N-type nanometer grid when the utility model embodiment θ=45 ° to two dimensional crystal forbidden band fluorescence polarization
Fluorescence spectra of the device being modulated in the direction TE, TM.
Figure 11 D is according to N-type nanometer grid when the utility model embodiment θ=45 ° to two dimensional crystal forbidden band fluorescence polarization
The device photoluminescence peak being modulated with shooting angle variation diagram.
The device photoluminescence line that N-type nanometer grid are modulated two dimensional crystal forbidden band fluorescence polarization when Figure 11 E is θ=45 °
Property degree with wavelength of fluorescence change curve.
N-type nanometer grid SEM schemes when Figure 12 A is θ=55 °.
The direction N-type nanometer grid TE white light reflection spectrogram when Figure 12 B is θ=55 °.
The device that N-type nanometer grid are modulated two dimensional crystal forbidden band fluorescence polarization when Figure 12 C is θ=55 ° is in TE, TM
The fluorescence spectra in direction.
N-type nanometer grid are to two dimensional crystal forbidden band fluorescence polarization when Figure 12 D is θ=55 ° according to the utility model embodiment
The device photoluminescence peak that property is modulated with the angle of emergence variation diagram.
N-type nanometer grid are to two dimensional crystal forbidden band fluorescence polarization when Figure 12 E is θ=55 ° according to the utility model embodiment
The device fluorescence linearity that property is modulated with wavelength of fluorescence change curve.
[symbol description]
1: substrate
2: insulating layer
3: two dimensional crystal single layer
4: light transmission medium layer
5: metal nano Meta Materials
Specific embodiment
For the purpose of this utility model, technical solution and advantage is more clearly understood, below in conjunction with specific embodiment, and
Referring to attached drawing, the utility model is further described.
The utility model proposes a kind of device for modulating two dimensional crystal forbidden band fluorescence polarization, the structural representations of the device
Figure is as shown in Figure 1, the device includes: a high conductive material substrate；The insulating layer formed on the high conductive material substrate；
The two dimensional crystal single layer being formed on the insulating layer；The light transmission medium layer formed on the two dimensional crystal single layer；With
And the metal nano Meta Materials with periodic cells structure formed on the light transmission medium layer.
In the present invention, high conductive material substrate is highly doped silicon or metal substrate, with a thickness of 500-750 μm.Lining
Bottom material is versatile and flexible, has Mutiple Choice, has good compatibility with silicon based photon platform and micro-nano technology of preparing；Insulation
Layer can select SiO2、Al2O3Equal oxides, with a thickness of 270-310nm；Two dimensional crystal single layer can select transition metal sulfur family
Compound MX2, such compound is luminous for direct energy-gap semiconductor, and fluorescence is stronger.Wherein M=Mo, W；X=S, Se, Te；It is thick
Degree is less than 1nm；Light transmission medium layer can select Al2O3Or SiO2.Two dimensional crystal is isolated from the outside world by the light transmission medium layer, reduces
Influence of the factors such as water, oxygen to two dimensional crystal, effectively improves device lifetime.The thickness of light transmission medium layer chooses the dielectric with medium
Constant is related.Dielectric constant is bigger, and thickness of dielectric layers is smaller.Because the thickness effect Meta Materials of dielectric layer are saturating to the resonance of exciting field
It penetrates and absorbs, therefore optimum thickness is corresponding thickness when Meta Materials resonant transmission peak coincide with pump wavelength.The utility model
In, light transmission medium layer is with a thickness of 10-50nm；Metal Nano structure Meta Materials can select the metal materials such as gold, silver, aluminium, thick
Degree is 30-100nm.
Since the Meta Materials size of device use is small, do not limited by optical diffraction limit and fixed point is integrated in suitable sheets,
So that the size of the device is flexibly adjustable, it is suitable for micro-nano modulation of source.Regulatable minimum area is by metamaterial structure unit
It determines, in hundred nanometers of squares, provides device basis for chip-scale photonic device, system and functional development.
Since Meta Materials surface plasmon resonance is the collective resonance behavior of light Yu Meta Materials surface electronic, not by temperature
Influence, thus the utility model proposes polarization modulation method effectively widen temperature applicable range；Meanwhile the modulator approach can open up
Wide linearity adjustable extent.By optimizing structure design, the coupling between Meta Materials mode of resonance and two dimensional crystal fluorescence is adjusted
Degree generates the fluorescence signal of the different linearities.
The device of modulation two dimensional crystal forbidden band fluorescence polarization provided by the utility model, the preparation method stream of described device
Journey figure is as shown in Fig. 2, specifically include:
Step S201: a high conductive material substrate is provided；
Step S202: an insulating layer is aoxidized on the high conductive material substrate；
Step S203: a two dimensional crystal single layer is deposited on the insulating layer；
Step S204: a light transmission medium layer is deposited on the two dimensional crystal single layer；
Step S205: the spin coating electron beam negtive photoresist on the light transmission medium layer；
Step S206: being exposed negtive photoresist, exposes laggard development；
Step S207: a metal layer is deposited in negtive photoresist after development；And
Step S208: it removes the metal with periodic cells structure on light transmission medium layer that remaining negtive photoresist obtains and receives
Rice Meta Materials.
Wherein, the high conductive material substrate is highly doped silicon or metal substrate, with a thickness of 500-750 μm；
Wherein, the insulating layer is SiO2Or Al2O3, with a thickness of 270-310nm, height is formed in by wet oxidizing process
Conductive material substrate；
Wherein, the two dimensional crystal single layer is Transition-metal dichalcogenide MX2, wherein M=Mo, W；X=S, Se, Te；
Wherein, the two dimensional crystal thickness in monolayer is less than 1nm, by chemical vapour deposition technique by the two dimensional crystal single layer
It is deposited on the insulating layer；
Wherein, the light transmission medium layer is Al2O3Or SiO2, with a thickness of 10-50nm, by e-beam evaporation vapor deposition in
On two dimensional crystal single layer；
Wherein, the electron beam negtive photoresist is MA2403；
Wherein, the metal Nano structure Meta Materials are the nano structural materials of gold, silver, aluminium, with a thickness of 30-100nm, are led to
Electronics direct writing technology is crossed to be prepared；
Wherein, the metal nano Meta Materials with periodic cells structure have line style, V-type or N type junction structure, and V
Type or N type junction structure and the angle of horizontal direction are air-gap inclination angle theta.
In order to verify the utility model proposes modulation two dimensional crystal forbidden band fluorescence polarization device to two dimensional crystal prohibit
Modulating action with fluorescence polarization, to the utility model proposes device carried out test and calculating process as shown in Figure 3,
It specifically includes:
Step S301: being converged to pump light on sample with 50X object lens, and excitation two dimensional crystal single layer issues fluorescence, simultaneously
Fluorescence signal is collected.It is the acquisition of fluorescence picture first, excitation light path, sideband optical filter is carried on ordinary optical microscope
The acquisition that imaging system carries out fluorescence picture is formed with highly sensitive imaging CCD.
Step S302: the outgoing fluorescence Spectra to sample in the direction TE/TM is acquired.Wherein, the direction TE/TM refers to and pumps
Parallel/vertical direction of laser polarization.In the step, uses Fluorescence Spectrometer (Andor SR-500) and fluorescence signal is carried out
Acquisition.It needs to place analyzer before band pass filter when acquisition, the fluorescence in different polarization direction is completed by rotation analyzer
Acquisition.
Step S303: spectrum of the measurement fluorescent in 0 ° of -360 ° of exit angle range, and photoluminescence peak is drawn with outgoing
The variation diagram of angle.
Step S304: pass through formula L=(ITE-ITM)/(ITE+ITM) calculate the fluorescence linearity, and draw the fluorescence linearity with
The graph of relation of wavelength of fluorescence.
Embodiment 1:WS2The test of single fluorescent polarizability
Firstly, in SiO2On/Si substrate, WS is generated by chemical vapor deposition2Single layer: the powder of sulphur and tungsten is added respectively
Steam is taken to deposition growing on clean substrate using argon gas as carrier gas and obtains WS by heat to steam is generated2Single layer.
Fig. 4 A is the WS2The optical microscopy imaging of single layer.Fig. 4 B is tested by step S302 in the direction TE, TM
Outgoing fluorescence spectrum.By Fig. 4 B it is found that direction fluorescent intensity of the sample in TE, TM is equal, WS2The fluorescence peak of single layer~
630nm, halfwidth~30nm, forbidden bandwidth 1.9-2.0eV.Fig. 4 C is the fluorescence Spectra tested by step S303 with going out
The variation diagram of firing angle.By Fig. 4 C it is found that the sample is equal in the light intensity of each angle of emergence.Fig. 4 D is to be tested by step S304
The fluorescence linearity arrived with wavelength of fluorescence change curve, by Fig. 4 D it is found that the fluorescence linearity of the sample within the scope of forbidden band
It is~0.
2:Ag nanometers of wiregratings of embodiment are to WS2The device that forbidden band fluorescence polarization is modulated
Due to the utility model proposes modulator approach be based on Meta Materials surface plasmon resonance principle, which is
It is influenced by Meta Materials shape, the metal nano Meta Materials for devising three kinds of shapes in example thus adjust the fluorescence linearity
System, is a nanometer wiregrating, V-type nanometer grid and N-type nanometer grid respectively.
The selection in cellular construction period is determined according to two dimensional crystal wavelength of fluorescence.For example, N, V-type nanostructure TE,
The period of TM polarization direction can be set to 200nm and 400nm respectively, in this way, Meta Materials surface plasmon resonance can be in single layer WS2
Wavelength of fluorescence~630nm is nearby generated.Further the inclination angle of air-gap in structural unit is adjusted, it can be by resonance response
It is adjusted at wavelength of fluorescence, to realize the coupling of Meta Materials Yu two dimensional crystal higher degree.
Three kinds of metal nano Meta Materials have the different periods in the direction TM, TE.The wherein direction wire grid construction TM week
Phase is 600-800nm；N, the period in the direction V-type nanometer grid TE is 150-300nm, and the period in the direction TM is 300-600nm.N,V
Shape nanostructure has air-gap inclination angle theta in more adjustable structural dimension, especially structural units compared with wire grid construction.This is practical
It is novel that resonant position is accurately adjusted by adjusting θ.
Below for three kinds of nanometer wiregrating, V-type nanometer grid and N-type nanometer grid structures to two dimensional crystal forbidden band fluorescence polarization
The device and fluorescence linearity test process being modulated are described in detail.
(1) Ag nanometers of wiregratings are to WS2The device that forbidden band fluorescence polarization is modulated
First on a si substrate, one layer of SiO is obtained by wet oxidation2Insulating layer；Then on the insulating layer, chemistry is utilized
Vapour deposition process grows one layer of WS2Single layer；Then it on single layer, is deposited to obtain one layer of Al with electron beam plated film instrument2O3Light transmission medium
Layer；Again on light transmission medium layer, spin coating electron beam negtive photoresist MA2403；Negtive photoresist MA2403 is exposed using direct electronic beam writing technology
Light is write on structure in negtive photoresist with the electron beam of focusing；Retain the negtive photoresist MA2403 being exposed after development；Finally pass through metal steam
Glue process is plated and removed, Ag nanometers of Meta Materials are formed, nanometer wiregrating-WS is made2Single fluorescent polarization modulating arrangement, wherein Fig. 5 A
It is the SEM figure of Ag nanometers of wiregratings in the structure.The period of silver nanoparticle wiregrating and line width b=600nm, w=480nm.
Fig. 5 B is the nanometer wiregrating-WS tested by step S3022Single layer forbidden band fluorescence polarization modulating device TE,
The outgoing fluorescence Spectra in the direction TM.By Fig. 5 B it is found that nanometer wiregrating-WS2Single layer forbidden band fluorescence polarization modulating device is in the direction TM
Fluorescence intensity is the 40% of the direction TE.Fig. 5 C is that the photoluminescence peak tested by step S303 is advised with the variation of the angle of emergence
Rule.By Fig. 5 C it is found that line bias occurs in fluorescence, polarization direction is parallel with nanometer wiregrating.Fig. 5 D is tested by step S304
The fluorescence linearity arrived with wavelength of fluorescence change curve.By Fig. 5 D it is recognized that while fluorescence peak is in 630nm, the fluorescence linearity is simultaneously
Do not enhance at this location, but shows wide range response.Caused by this is the wide range resonance of wiregrating.
(2) V-type Ag nanometers of grid are to WS2The device that forbidden band fluorescence polarization is modulated
First on a si substrate, one layer of SiO is obtained by wet oxidation2As insulating layer；Then on the insulating layer, utilize
Chemical vapour deposition technique grows one layer of WS2Single layer；Then on single layer, one layer of Al is deposited with electron beam plated film instrument2O3Light transmission medium
Layer；Again on light transmission medium layer, spin coating electron beam negtive photoresist MA2403；Negtive photoresist MA2403 is exposed using direct electronic beam writing technology
Light is write on structure in negtive photoresist with the electron beam of focusing；Retain the negtive photoresist MA2403 being exposed after development；Finally pass through metal steam
Glue process is plated and removed, Ag nanostructure is formed and the device is made, wherein Fig. 6 is the structure of Ag nanometers of wiregratings of V-type in the structure
Figure.Wherein, the period of nanometer grid and line width a=200nm, b=400nm；S=50nm, the inclination angle theta of air-gap are variables.
When below for θ=51 ° and θ=63 °, V-type nanometer grid-WS has been carried out2Single layer coupling device fluorescence polarization is surveyed
Amount.
(1) θ=51 °
The SEM figure of V-type nanometer grid when Fig. 7 A is θ=51 °.Fig. 7 B is that white light reflection of the device in the direction TE is composed, 600-
The reflection paddy of 650nm represents the surface plasmon resonance position of the device.Fig. 7 C is this tested by step S302
Fluorescence Spectra of the device in the direction TE, TM.By Fig. 7 C it is found that the fluorescence intensity in the direction TM is only the 25% of the direction TE, nanometer is compared
Wiregrating-WS2Coupling device, TE, TM intensity difference become larger.Fig. 7 D is the photoluminescence peak tested by step S303 with the angle of emergence
Changing rule.By Fig. 7 D it is found that stronger line bias occurs in fluorescence, polarization direction is parallel with V-type grid length axis.Fig. 7 E is to pass through
The fluorescence linearity that step S304 is tested with wavelength of fluorescence change curve, in figure peak value be located at~625nm at, with surface
Plasmon resonance position coincide, and the linearity is up to~60%.The fluorescence linearity is still very high after 650nm wavelength, this is because
WS2Caused by the impurity fluorescence of this range is modulated by Meta Materials.
(2) θ=63 °
The SEM figure of V-type nanometer grid when Fig. 8 A is θ=63 °.Fig. 8 B is that white light reflection of the device in the direction TE is composed, 650nm
Neighbouring reflection paddy represents the surface plasmon resonance position of V-type nanometer grid structure.Fig. 8 C is tested by step S302
For the obtained device in the fluorescence Spectra in the direction TE, TM, spectral results show that larger difference occur in two vertical direction fluorescent intensities.Figure
8D is the changing rule of the photoluminescence peak tested by step S303 with the angle of emergence, by Fig. 8 D it is found that fluorescence occur it is stronger
Line bias, polarization direction are parallel with V-type grid length axis.Fig. 8 E is the fluorescence linearity tested by step S304 with fluorescence wave
Long change curve, by Fig. 8 E it is found that its linearity has an apparent peak, peak value~60%, the outward linear degree in peak near 640nm
It reduces quickly.This is because surface plasmon resonance of the V-type nanometer grid in the direction TE occurs attached in 650nm when θ=63 °
Closely, only fluorescence signal herein is played and relatively emphasizes to make.The reason of high background fluorescence occurs may be to remain except glue process is bad
Caused by residue glue shines.
(3) N-type Ag nanometers of grid are to WS2The device that forbidden band fluorescence polarization is modulated
First on a si substrate, one layer of SiO is obtained by wet oxidation2Insulating layer；Then on the insulating layer, chemistry is utilized
Vapour deposition process grows one layer of WS2Single layer；Then on single layer, one layer of Al is deposited with electron beam plated film instrument2O3Light transmission medium layer；
Again on light transmission medium layer, spin coating electron beam negtive photoresist MA2403 is write on structure in negtive photoresist with the electron beam of focusing；Using electronics
Beam direct writing technology is exposed negtive photoresist MA2403；Retain the negtive photoresist MA2403 being exposed after development；Finally pass through metal evaporation
With except glue process, Ag nanostructure is formed, the device is made, wherein Fig. 9 is the structure chart of Ag nanometers of wiregratings of N-type in the structure.
The period of nanometer grid and line width a=200nm, b=400nm in the structure；S=50nm, the inclination angle theta of air-gap are variables.
When below for θ=30 °, θ=45 °, θ=55 °, N-type nanometer grid-WS2Single layer coupling device carries out fluorescence polarization
Property test.
(1) θ=30 °
The SEM figure of N-type nanometer grid when Figure 10 A is θ=30 °.Figure 11 B is that white light reflection of the device in the direction TE is composed, by
Surface plasmon resonance position is at 570nm known to this.Figure 10 C be the device tested by step S302 TE,
The fluorescence Spectra in the direction TM.By Figure 10 C it is found that larger difference occur in two vertical direction fluorescent intensities, background fluorescence is very high.Figure 10 D
It is the variation diagram of the photoluminescence peak tested by step S303 with the angle of emergence, it follows that line bias occurs in fluorescence, but not
By force, polarization direction is parallel with N-type grid length axis.Figure 10 E is the fluorescence linearity tested by step S304 with wavelength of fluorescence
Change curve, the linearity near fluorescence peak 630nm is less than 40%, the reason is that when θ=30 °, surface of N-type grid etc. from
Plasmon resonance position is at 570nm, and fluorescence peak position deviation is larger, therefore resonant fields are weak on the influence of the polarization of fluorescence field.It is high
The reason of background fluorescence occurs is θ small, and outgoing fluorescence is weak, and signal-to-noise ratio is low.
(2) θ=45 °
The SEM figure of N-type nanometer grid when Figure 11 A is θ=45 °.Figure 11 B is that white light reflection of the device in the direction TE is composed, by
Surface plasmon resonance position is at 630nm known to this.The device that Figure 11 C is tested by step S302 is in TE, TM
The fluorescence Spectra in direction.By Figure 11 C it is found that maximum difference occur in two vertical direction fluorescent intensities.It is emitted that fluorescence signal is strong, back simultaneously
Scape is weak, and signal-to-noise ratio is high.Figure 11 D is the variation diagram of the photoluminescence peak tested by step S303 with the angle of emergence, as seen from the figure,
There is superpower linear polarization in fluorescence, and polarization direction is parallel with N-type grid length axis.Figure 11 E be tested by step S304 it is glimmering
The actinic change curve spent with wavelength of fluorescence.By the change curve it is found that the linearity near fluorescence peak 630nm be~
80%.The reason of structure appearance superpower linearity is when θ=45 °, and surface phasmon of the N-type nanometer grid in the direction TE is total
Vibration is placed exactly at wavelength of fluorescence, most strong to the modulation capability of fluorescence field.Under this mode activated, the fluorescence in the direction TE is smoothly saturating
Nanovoids are crossed, and the direction TM fluorescence is suppressed, to the high fluorescence linearity occur.
(3) θ=55 °
Figure 12 A is the SEM figure of θ=55 ° N-type nanometer grid.Figure 12 B is that white light reflection of the device in the direction TE is composed, thus
Know surface plasmon resonance position at 660nm.Figure 12 C is the device tested by step S302 in TE, TM
The outgoing fluorescence Spectra in direction.By Figure 12 C it is found that very big difference occur in two vertical direction fluorescent intensities, while being emitted fluorescence signal
By force, background is weak, and signal-to-noise ratio is high.Due to the Control of Fluorescence reduced capability in the direction TM, compared to the N-type grid of θ=45 °, fluorescent intensity exists
The difference in the direction TE/TM is reduced.Figure 12 D is the variation of the photoluminescence peak tested by step S303 with the angle of emergence
There is strong linear polarization in figure, as seen from the figure, fluorescence, and polarization direction is parallel with N-type grid length axis.Figure 12 E is surveyed by step S304
The obtained fluorescence linearity is tried with the change curve of wavelength of fluorescence.As seen from the figure, the linearity near fluorescence peak 630nm be~
60%, the outward linear degree of fluorescence peak reduces very fast.The surface plasmon resonance position of the structure is in~660nm, with WS2After integrated
Between N-type grid when the fluorescence linearity of generation is between θ=30 ° and θ=45 °, show that changing angle can be changed surface etc. from sharp
First resonant position, while adjusting the fluorescence linearity.
Embodiment 3:
Except above-mentioned system, there are also single layer WSe for the two dimensional crystal that can preferentially choose2。WSe2Single layer has higher quantum efficiency
With longer wavelength of fluorescence 750nm.By the WSe2Single layer prepares Meta Materials-two dimensional crystal forbidden band fluorescence polarization modulating device
Structure is identical as process and embodiment 2, and the selected nanostructure period will determine according to wavelength of fluorescence, selected thickness of dielectric layers by
Excitation wavelength determines that formulating rules illustrate in technical solution brief introduction.Usual wavelength increases, and metal, which dissipates, to be reduced, surface
Plasmon resonance response enhancing is better to fluorescence linearity modulation effect.
Particular embodiments described above has carried out into one the purpose of this utility model, technical scheme and beneficial effects
Step is described in detail, it should be understood that being not limited to this foregoing is merely specific embodiment of the utility model
Utility model, within the spirit and principle of the utility model, any modification, equivalent substitution, improvement and etc. done should all wrap
Containing being within the protection scope of the utility model.
Claims (7)
1. a kind of device for modulating two dimensional crystal forbidden band fluorescence polarization characterized by comprising
One high conductive material substrate；
The insulating layer formed on the high conductive material substrate；
The two dimensional crystal single layer formed on which insulating layer；
The light transmission medium layer formed on the two dimensional crystal single layer；And
The metal nano Meta Materials with periodic cells structure formed on the light transmission medium layer.
2. the device of modulation two dimensional crystal forbidden band fluorescence polarization according to claim 1, which is characterized in that the height is led
Electric material substrate is highly doped silicon or metal substrate, with a thickness of 500-750 μm；The high conductive material substrate plays structural support
Effect, and the fluorescence issued to the two dimensional crystal single layer reflects.
3. the device of modulation two dimensional crystal forbidden band fluorescence polarization according to claim 1, which is characterized in that the insulation
Layer is SiO2、Al2O3, with a thickness of 270-310nm；Growth substrates of the insulating layer as the two dimensional crystal single layer.
4. the device of modulation two dimensional crystal forbidden band fluorescence polarization according to claim 1, which is characterized in that the two dimension
Crystal single layer is Transition-metal dichalcogenide MX2, wherein M=Mo, W；X=S, Se, Te；The two dimensional crystal thickness in monolayer is small
In 1nm；The two dimensional crystal single layer emits fluorescence under the excitation of pump light.
5. the device of modulation two dimensional crystal forbidden band fluorescence polarization according to claim 1, which is characterized in that the light transmission
Dielectric layer is Al2O3Or SiO2, with a thickness of 10-50nm；Metal nano Meta Materials described in the thickness effect of the light transmission medium layer exist
Resonance Transmission and absorption at exciting field, further influence fluorescence intensity；The light transmission medium layer protects two dimensional crystal material, exempts from
It is influenced by water, oxygen or foreign ion.
6. the device of modulation two dimensional crystal forbidden band fluorescence polarization according to claim 1, which is characterized in that the metal
Nanometer Meta Materials are the nanostructures of gold, silver or aluminium, with a thickness of 30-100nm.
7. the device of modulation two dimensional crystal forbidden band fluorescence polarization according to claim 1, it is characterised in that:
The metal nano Meta Materials with periodic cells structure have line style, V-type or N-type air-gap structure；
The V-type or N-type air-gap and the angle of horizontal direction are air-gap inclination angle theta.
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