CN209692724U - Power on-off control circuit - Google Patents
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- CN209692724U CN209692724U CN201920224161.7U CN201920224161U CN209692724U CN 209692724 U CN209692724 U CN 209692724U CN 201920224161 U CN201920224161 U CN 201920224161U CN 209692724 U CN209692724 U CN 209692724U
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Abstract
The utility model relates to a kind of power on-off control circuits, including the first metal-oxide-semiconductor switch module, the second metal-oxide-semiconductor switch module and switching signal transfer module, the switching signal transfer module, for receiving external first switch control signal, and second switch is sent to the first metal-oxide-semiconductor switch module and the second metal-oxide-semiconductor switch module and controls signal；The first metal-oxide-semiconductor switch module and the second metal-oxide-semiconductor switch module are each equipped with the metal-oxide-semiconductor for responding the second switch control signal to realize on-off control, and the first metal-oxide-semiconductor switch module is in parallel with the second metal-oxide-semiconductor switch module, the switch control for power supply.It in the case that the utility model can guarantee that power switch circuit operates normally, solves the problems, such as to cause temperature to increase due to metal-oxide-semiconductor grid drain electrode short circuit, avoids damaging circuit, be also able to satisfy the needs of safety test.
Description
Technical field
The utility model relates to electronic switching technology fields, more particularly to a kind of power on-off control circuit.
Background technique
Metal-oxide-semiconductor is a kind of common element, its output electric current is decided by the size of input terminal voltage, does not need letter substantially
Number source provides electric current, and its conducting resistance is small, loss is small, high-efficient, small in size, in a power usually as opening
It puts enforcement into use, is especially suitable for high-current circuit.
For in metal-oxide-semiconductor power switch circuit, since metal-oxide-semiconductor has a characteristic of amplification electric current, if MOS in the circuit
The grid and drain short circuit of pipe damage, and metal-oxide-semiconductor can enter amplification working condition, and the electric current of output can become very big, lead to institute
Circuit fever and persistently overheating are stated, may cause the circuit damage, or even pcb board is caused to burn.In the peace of the circuit
It in rule test, needs for the grid of metal-oxide-semiconductor and drain electrode to be shorted, then it is excessively high to lead to the problem of temperature rise, is likely to result in circuit damage
It is bad.
Currently used solution, which is included in such power switch circuit, is arranged dedicated protection IC either utilization
Switch element closes the modes such as the circuit, although setting privacy protection IC response speed is very fast, hardware cost is higher；Directly
The circuit closing is controlled using switch element will make whole system out of service, and only can solve prevents the circuit from continuing
The problem of heating, but can not solve to cause due to metal-oxide-semiconductor grid drain electrode short circuit described in the case where guaranteeing that system operates normally
The problem of circuit temperature increases.
Utility model content
Based on this, it is necessary to for how guarantee power switch circuit can operate normally in the case where solve due to
Metal-oxide-semiconductor short circuit temperature rise is excessively high to damage problem to circuit, provides a kind of power on-off control circuit.
A kind of power on-off control circuit, including the first metal-oxide-semiconductor switch module, the second metal-oxide-semiconductor switch module and switch letter
Number transfer module, the switching signal transfer module, for receiving external first switch control signal, and to the first MOS
Pipe switch module and the second metal-oxide-semiconductor switch module send second switch and control signal；The first metal-oxide-semiconductor switch module with
The second metal-oxide-semiconductor switch module is each equipped with the metal-oxide-semiconductor for responding the second switch control signal to realize on-off control, and
The first metal-oxide-semiconductor switch module is in parallel with the second metal-oxide-semiconductor switch module, the switch control for power supply.
The first metal-oxide-semiconductor switch module includes the first metal-oxide-semiconductor and first control unit in one of the embodiments,
First metal-oxide-semiconductor, for responding the second switch control signal；The first control unit, for open-minded when receiving
When signal, the first metal-oxide-semiconductor conducting is controlled；When receiving cut-off signals, the first metal-oxide-semiconductor cut-off is controlled.
The second metal-oxide-semiconductor switch module includes the second metal-oxide-semiconductor and the second control unit in one of the embodiments,
Second metal-oxide-semiconductor, for responding the second switch control signal；Second control unit, for open-minded when receiving
When signal, the second metal-oxide-semiconductor conducting is controlled；When receiving cut-off signals, the second metal-oxide-semiconductor cut-off is controlled.
The first control unit includes pull-up resistor, first diode and the first drop-down in one of the embodiments,
Resistance；First metal-oxide-semiconductor is depletion type PMOS tube, and the source electrode of first metal-oxide-semiconductor connects power input, drain electrode connection electricity
Source output terminal, grid connect the cathode of the first diode；First pull down resistor is in parallel with the first diode；Institute
It states pull-up resistor first end to connect with the source electrode of first metal-oxide-semiconductor, second end is connect with the anode of the first diode.
Second control unit includes the second diode and the second pull down resistor in one of the embodiments,；It is described
Second metal-oxide-semiconductor is depletion type PMOS tube, and the source electrode of second metal-oxide-semiconductor connects the power input, and drain electrode connects the electricity
Source output terminal, grid connect the cathode of second diode；Second pull down resistor and second diodes in parallel；Institute
The first end for stating pull-up resistor is also connect with the source electrode of second metal-oxide-semiconductor, anode of the second end also with second diode
Connection.
The switching signal transfer module includes triode in one of the embodiments, the collector of the triode
It is connect with the second end of the pull-up resistor, emitter ground connection, base stage receives the second switch and controls signal.
The first metal-oxide-semiconductor switch module further includes the first protection capacitor and the second protection in one of the embodiments,
Capacitor, the first protection capacitor are parallel between the source electrode and grid of first metal-oxide-semiconductor；The second protection capacitor is in parallel
Between the drain electrode and grid of first metal-oxide-semiconductor.
The second metal-oxide-semiconductor switch module further includes third protection capacitor and protection four in one of the embodiments,
Capacitor, the third protection capacitor are parallel between the source electrode and grid of second metal-oxide-semiconductor；The 4th protection capacitor is in parallel
Between the drain electrode and grid of second metal-oxide-semiconductor.
The switching signal transfer module further includes filter and voltage regulation resistance, the filter in one of the embodiments,
Wave device includes the first filter capacitor and resistance, and first filter capacitor and the resistor coupled in parallel, the filter are parallel to institute
It states between the base stage of triode and emitter；The voltage regulation resistance is series in the base stage of the triode, second control
Signal is transferred to base stage via the voltage regulation resistance.
The power on-off control circuit further includes the second filter capacitor and third filtered electrical in one of the embodiments,
Hold, second filter capacitor one end is connect with the power input, other end ground connection；Third filter capacitor one end with
The power output end connection, other end ground connection.
Above-mentioned power on-off control circuit, by be arranged in parallel two same structures switch control module collective effect,
It is mutually spare, when master element (i.e. MOS occurs for any one in the first metal-oxide-semiconductor switch module or the second metal-oxide-semiconductor switch module
Pipe) grid drain electrode short circuit when, another can independent role, continue control power supply switching, guarantee power switch circuit
In the case where normal operation, solves the problems, such as to cause temperature to increase due to metal-oxide-semiconductor grid drain electrode short circuit, avoid that circuit is caused to damage
It is bad, also it is able to satisfy the needs of safety test.
Detailed description of the invention
Fig. 1 is power on-off control circuit function structure chart；
Fig. 2 is the circuit structure diagram of power on-off control circuit in one embodiment；
Fig. 3 is the circuit structure diagram of power on-off control circuit in another embodiment.
Specific embodiment
The utility model will be described more fully below for the ease of understanding the utility model,.But this is practical
It is novel to realize in many different forms, however it is not limited to embodiment described herein.On the contrary, providing these implementations
The purpose of example is to make the understanding of the disclosure of the utility model more thorough and comprehensive.
Unless otherwise defined, all technical and scientific terms used herein are led with the technology for belonging to the utility model
The normally understood meaning of the technical staff in domain is identical.Terminology used in the description of the utility model herein only be
The purpose of description specific embodiment, it is not intended that in limitation the utility model.
As shown in connection with fig. 1, in a specific embodiment, including the first metal-oxide-semiconductor switch module 100, the second metal-oxide-semiconductor are opened
Close module 110 and switching signal transfer module 120, the switching signal transfer module 120, for receiving external first switch control
Signal processed, and second switch control is sent to the first metal-oxide-semiconductor switch module 100 and the second metal-oxide-semiconductor switch module 110
Signal；The first metal-oxide-semiconductor switch module 100 is each equipped with response described second with the second metal-oxide-semiconductor switch module 110 and opens
Control signal is closed to realize the metal-oxide-semiconductor of on-off control, and the first metal-oxide-semiconductor switch module 100 and second metal-oxide-semiconductor switch
Module 110 is in parallel, the switch control for power supply.
When switching signal transfer module 120 is transmitted to the first metal-oxide-semiconductor switch module 100 and the second metal-oxide-semiconductor switch module 110
When open signal, the first metal-oxide-semiconductor switch module 100 and the second metal-oxide-semiconductor switch module 110 are both turned on, control power supply output；When opening
OFF signal transfer module 120 is turned off to the first metal-oxide-semiconductor switch module 100 and the second metal-oxide-semiconductor switch module 110 transmitting cut-off signals
When signal, the first metal-oxide-semiconductor switch module 100 and the second metal-oxide-semiconductor switch module 110 are not turned on, and control power supply is closed.
First metal-oxide-semiconductor switch module 100 and the second metal-oxide-semiconductor switch module 110 are all made of metal-oxide-semiconductor as master element, make
It is low to obtain power on-off control circuit loss.When the master element metal-oxide-semiconductor generation grid drain electrode of the first metal-oxide-semiconductor switch module 100 is short
When the problem of road, the metal-oxide-semiconductor of the first metal-oxide-semiconductor switch module 100 enters amplification working condition, it will electric current is amplified, but this
When source electrode and drain electrode between resistance much larger than its normal work when conducting resistance, i.e. the electricity of the first metal-oxide-semiconductor switch module 100 at this time
Resistance is much larger than the second metal-oxide-semiconductor switch module 110, is equivalent to 100 open circuit of the first metal-oxide-semiconductor switch module, electric current will be from the second metal-oxide-semiconductor
Switch module 110 circulates, and continues normal control power switch, and the first metal-oxide-semiconductor switch module 100 passes through almost without electric current,
Therefore it not will cause the heating of master element persistent fever, and then avoid element or circuit damage；Similarly, the second metal-oxide-semiconductor is opened
When same failure occurs for pass module 110, by 100 independent role of the first metal-oxide-semiconductor switch module, power switch is controlled.
Circuit design so is low in cost compared to dedicated protection IC is arranged, and can be not influence system normal
In the case where work, avoid the problem that leading to the excessively high damage circuit of temperature rise due to master element metal-oxide-semiconductor grid drain electrode short circuit, simultaneously
When needing to carry out master element metal-oxide-semiconductor grid drain electrode to be shorted test when also can solve safety test, temperature is increased, and exceeds safety
Defined safe temperature even damages the case where pcb board, and circuit is made to meet safety requirement.
In addition, when circuit works normally, the first metal-oxide-semiconductor switch module 100 and the formation of the second metal-oxide-semiconductor switch module 110
Shunt, reduce routine work when both master element metal-oxide-semiconductor temperature rise, protect circuit.
As shown in connection with fig. 2, in one of the embodiments, the first metal-oxide-semiconductor switch module include the first metal-oxide-semiconductor M1 and
First control unit, the first metal-oxide-semiconductor M1, for responding the second switch control signal；The first control unit is used
It is connected in when receiving open signal, controlling the first metal-oxide-semiconductor M1；When receiving cut-off signals, control described first
Metal-oxide-semiconductor cut-off.
When switching signal transfer module 120 sends cut-off signals, the first metal-oxide-semiconductor switch module 100 needs to control power supply
It closes, i.e., the first metal-oxide-semiconductor M1 needs to end, due to using p-type metal-oxide-semiconductor, high level cut-off, at this time in first diode D1 conducting
Pull-up resistor R2 provides high level, control the first metal-oxide-semiconductor M1 cut-off for the grid of the first metal-oxide-semiconductor M1；When switching signal transfer module
When 120 transmission open signal, the first metal-oxide-semiconductor switch module 100 needs to control power supply output, and the first metal-oxide-semiconductor M1 needs to be connected, this
When first diode D1 end, pull-up resistor R2 is equivalent to disconnection, by switching signal transfer module 120 via the first pull down resistor
R1 provides low level, control the first metal-oxide-semiconductor M1 conducting for the grid of the first metal-oxide-semiconductor M1.
For master element the first metal-oxide-semiconductor M1, those skilled in the art can also select N-type metal-oxide-semiconductor as needed, only need by
The circuit of high level is provided to grid, change can provide low level circuit for grid；The circuit of high level is provided to grid, is become
The circuit of high level can be more provided for grid to be changed into grid and mention when switching signal transfer module 120 sends open signal
For high level, the first metal-oxide-semiconductor M1 conducting is controlled, does not have progress compared to the utility model for the technology converted through this
And substantive distinguishing features, still fall within scope of protection of the utility model.
As shown in connection with fig. 3, the second metal-oxide-semiconductor switch module 110 includes the second metal-oxide-semiconductor in one of the embodiments,
M2 and the second control unit, the second metal-oxide-semiconductor M2, for responding the second switch control signal；Second control is single
Member, for when receiving open signal, controlling the second metal-oxide-semiconductor conducting；When receiving cut-off signals, described the is controlled
The cut-off of two metal-oxide-semiconductors.
Second metal-oxide-semiconductor switch module, 110 working principle is identical as the first metal-oxide-semiconductor switch module 100, when switching signal is transmitted
When module 120 sends cut-off signals, the second metal-oxide-semiconductor switch module 110 needs to control power supply closing, i.e. the second metal-oxide-semiconductor M2 needs
Cut-off, due to using p-type metal-oxide-semiconductor, high level cut-off, it is the second metal-oxide-semiconductor M2 that pull-up resistor R2, which is connected, in the second diode D2 at this time
Grid provide high level, control the second metal-oxide-semiconductor M2 cut-off；When switching signal transfer module 120 sends open signal, second
Metal-oxide-semiconductor switch module 110 needs to control power supply output, and the second metal-oxide-semiconductor M2 needs to be connected, and first diode D2 ends at this time, on
Pull-up resistor R2 is equivalent to disconnection, the grid for being the second metal-oxide-semiconductor M2 via the second pull down resistor R3 by switching signal transfer module 120
Low level, control the second metal-oxide-semiconductor M2 conducting are provided.
For master element the second metal-oxide-semiconductor M2, those skilled in the art can also select N-type metal-oxide-semiconductor as needed, only need by
The circuit of high level is provided to grid, change can provide low level circuit for grid；The circuit of high level is provided to grid, is become
The circuit of high level can be more provided for grid, when switching signal module 120 sends open signal, be changed into grid and height is provided
Level, control the second metal-oxide-semiconductor M2 conducting do not have progress and in fact compared to the utility model for the technology that convert through this
Matter feature, still falls within scope of protection of the utility model.
In one of the embodiments, as shown in Fig. 2, the first control unit includes pull-up resistor R2, the one or two pole
Pipe D1 and the first pull down resistor R1；First metal-oxide-semiconductor is depletion type PMOS tube, and the source electrode of the first metal-oxide-semiconductor M1 connects electricity
Source input terminal, drain electrode connection power output end, grid connect the cathode of the first diode D1；The first pull down resistor R1
It is in parallel with the first diode D1；The pull-up resistor R2 first end is connect with the source electrode of the first metal-oxide-semiconductor M1, second end
It is connect with the anode of the first diode D1.
When receiving cut-off signals, electric current is from power input, and by pull-up resistor R2, first diode D1 is being just at this time
To conducting, it is equivalent to a conducting wire, pull-up resistor R2 is connected with the grid of the first metal-oxide-semiconductor M1, grid accesses height at this time
Level, the first metal-oxide-semiconductor M1 cut-off, power supply are ended, and power output end is without output；When receiving open signal, the first metal-oxide-semiconductor M1
Grid be grounded by the first pull down resistor R1, grid accesses low level at this time, and the first metal-oxide-semiconductor M1 conducting, power supply passes through first
Metal-oxide-semiconductor is exported from power output end.
In one of the embodiments, as shown in Fig. 2, second control unit includes under the second diode D2 and second
Pull-up resistor R3；The second metal-oxide-semiconductor M2 is depletion type PMOS tube, and the source electrode of the second metal-oxide-semiconductor M2 connects the power input
End, drain electrode connect the power output end, and grid connects the cathode of the second diode D2；The second pull down resistor R3 with
The second diode D2 is in parallel；The first end of the pull-up resistor R2 is also connect with the source electrode of the second metal-oxide-semiconductor M2, and second
End is also connect with the anode of the second diode D2.
When receiving cut-off signals, electric current is from power input, and by pull-up resistor R2, the second diode D2 is being just at this time
To conducting, it is equivalent to a conducting wire, pull-up resistor R2 is connected with the grid of the second metal-oxide-semiconductor M2, grid accesses height at this time
Level, the second metal-oxide-semiconductor M2 cut-off, power supply are ended, and power output end is without output；When receiving open signal, the second metal-oxide-semiconductor M2
Grid be grounded by the second pull down resistor R3, grid accesses low level at this time, and the second metal-oxide-semiconductor M2 conducting, power supply passes through second
Metal-oxide-semiconductor is exported from power output end.
It is described in one of the embodiments, as shown in Fig. 2, the switching signal transfer module 120 includes triode Q1
The collector of triode Q1 is connect with the second end of the pull-up resistor R2, and emitter ground connection, base stage receives the second switch
Control signal.
Triode Q1 uses NPN type triode, when switching signal transfer module 120 sends open signal, switching signal
Input terminal is to triode Q1 base stage input high level, triode Q1 conducting, the grid of the emitter of triode Q1 to the first metal-oxide-semiconductor M1
The grid of pole and the second metal-oxide-semiconductor M2 access low level, to control power supply output；It is closed when switching signal transfer module 120 is sent
When break signal, i.e., switch signal input end is ended to triode Q1 base stage input low level, triode Q1, at this time the first metal-oxide-semiconductor
M1 and the second metal-oxide-semiconductor M2 are turned off, and control power supply is closed.
Triode Q1 can be changed to PNP type triode as needed by those skilled in the art, and to height electricity in circuit
Flat input and output are adjusted accordingly, and are also belonged within the protection scope of the utility model.
In one of the embodiments, as shown in Fig. 2, the first metal-oxide-semiconductor switch module 100 further includes the first protection electricity
Hold the protection of C1 and second capacitor C2, the first protection capacitor C1 is parallel between the source electrode and grid of the first metal-oxide-semiconductor M1；
The second protection capacitor C2 is parallel between the drain electrode and grid of the first metal-oxide-semiconductor M1.
The first protection capacitor C1 of setting and the second protection capacitor C2, when can be avoided power input, the first both ends metal-oxide-semiconductor M1
Voltage increase lead to its damage rapidly.
In one of the embodiments, as shown in figure 3, the second metal-oxide-semiconductor switch module 110 further includes third protection electricity
Hold the protection of C3 and the 4th capacitor C4, the third protection capacitor C3 is parallel between the source electrode and grid of the second metal-oxide-semiconductor M2；
The 4th protection capacitor C4 is parallel between the drain electrode and grid of the second metal-oxide-semiconductor M2.
Third is set and protects the protection capacitor C4 of capacitor C3 and the 4th, when can be avoided power input, the second both ends metal-oxide-semiconductor M2
Voltage increase lead to its damage rapidly.
The switching signal transfer module 120 further includes filter and voltage regulation resistance R5, institute in one of the embodiments,
Stating filter includes the first filter capacitor C5 and resistance R4, first filter capacitor and the resistor coupled in parallel, the filter
It is parallel between the base stage and emitter of the triode；The voltage regulation resistance R5 is series in the base stage of the triode Q1,
The second control signal is transferred to base stage via the voltage regulation resistance.
The power on-off control circuit further includes the second filter capacitor and third filtered electrical in one of the embodiments,
Hold, second filter capacitor one end is connect with the power input, other end ground connection；Third filter capacitor one end with
The power output end connection, other end ground connection.
As shown in connection with fig. 3, its working principle is described in detail:
When switching signal transfer module 120 sends cut-off signals, it is first that pull-up resistor R2, which is connected, in first diode D1
The grid of metal-oxide-semiconductor M1 provides high level, and control the first metal-oxide-semiconductor M1 cut-off, it is second that pull-up resistor R2, which is connected, in the second diode D2
The grid of metal-oxide-semiconductor M2 provides high level, and control the second metal-oxide-semiconductor M2 cut-off, electric current is from power input, by pull-up resistor
R2, first diode D1 and the second diode D2 forward conduction, are all equivalent to a conducting wire at this time, by pull-up resistor R2 with it is described
The grid of first metal-oxide-semiconductor M1 is connected, and grid accesses high level at this time, the first metal-oxide-semiconductor M1 cut-off, also by pull-up resistor R2 with it is described
The grid of second metal-oxide-semiconductor M2 is connected access high level, and the second metal-oxide-semiconductor M2 is also switched off, and control power supply is ended, power output end without
Output；
When switching signal transfer module 120 sends open signal, first diode D1 cut-off, pull-up resistor R2 is equivalent to
It disconnects, provides low level via the first pull down resistor R1 by switching signal transfer module 120 for the grid of the first metal-oxide-semiconductor M1, control
The first metal-oxide-semiconductor M1 conducting is made, first diode D2 cut-off, pull-up resistor R2 is equivalent to disconnection, by switching signal transfer module 120
Low level, control the second metal-oxide-semiconductor M2 conducting, the second metal-oxide-semiconductor are provided via the second pull down resistor R3 for the grid of the second metal-oxide-semiconductor M2
The grid of M2 is grounded by the second pull down resistor R3, and grid accesses low level at this time, the second metal-oxide-semiconductor M2 conducting, and power supply passes through the
Two metal-oxide-semiconductors are exported from power output end.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it cannot be understood as the limitations to utility model patent range.It should be pointed out that for the common skill of this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The protection scope of the utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (10)
1. a kind of power on-off control circuit, which is characterized in that including the first metal-oxide-semiconductor switch module, the second metal-oxide-semiconductor switch module
And switching signal transfer module,
The switching signal transfer module, for receiving external first switch control signal, and to the first metal-oxide-semiconductor switching molding
Block and the second metal-oxide-semiconductor switch module send second switch and control signal；
The first metal-oxide-semiconductor switch module and the second metal-oxide-semiconductor switch module are each equipped with the response second switch and control
Signal is to realize the metal-oxide-semiconductor of on-off control, and the first metal-oxide-semiconductor switch module is in parallel with the second metal-oxide-semiconductor switch module,
Switch control for power supply.
2. power on-off control circuit according to claim 1, which is characterized in that the first metal-oxide-semiconductor switch module packet
The first metal-oxide-semiconductor and first control unit are included,
First metal-oxide-semiconductor, for responding the second switch control signal；
The first control unit, for when receiving open signal, controlling the first metal-oxide-semiconductor conducting；It is closed when receiving
When break signal, the first metal-oxide-semiconductor cut-off is controlled.
3. power on-off control circuit according to claim 2, which is characterized in that the second metal-oxide-semiconductor switch module packet
The second metal-oxide-semiconductor and the second control unit are included,
Second metal-oxide-semiconductor, for responding the second switch control signal；
Second control unit, for when receiving open signal, controlling the second metal-oxide-semiconductor conducting；It is closed when receiving
When break signal, the second metal-oxide-semiconductor cut-off is controlled.
4. power on-off control circuit according to claim 3, which is characterized in that the first control unit includes pull-up
Resistance, first diode and the first pull down resistor；
First metal-oxide-semiconductor is depletion type PMOS tube, and the source electrode of first metal-oxide-semiconductor connects power input, drain electrode connection electricity
Source output terminal, grid connect the cathode of the first diode；
First pull down resistor is in parallel with the first diode；
The pull-up resistor first end is connect with the source electrode of first metal-oxide-semiconductor, the anode of second end and the first diode
Connection.
5. power on-off control circuit according to claim 4, which is characterized in that second control unit includes second
Diode and the second pull down resistor；
Second metal-oxide-semiconductor is depletion type PMOS tube, and the source electrode of second metal-oxide-semiconductor connects the power input, and drain electrode connects
The power output end is connect, grid connects the cathode of second diode；
Second pull down resistor and second diodes in parallel；
The first end of the pull-up resistor is also connect with the source electrode of second metal-oxide-semiconductor, second end also with second diode
Anode connection.
6. power on-off control circuit according to claim 5, which is characterized in that the switching signal transfer module includes
Triode；
The collector of the triode is connect with the second end of the pull-up resistor, and emitter ground connection, base stage receives described second
Switch control signal.
7. power on-off control circuit according to claim 2, which is characterized in that the first metal-oxide-semiconductor switch module is also
Capacitor is protected including the first protection capacitor and second,
The first protection capacitor is parallel between the source electrode and grid of first metal-oxide-semiconductor；
The second protection capacitor is parallel between the drain electrode and grid of first metal-oxide-semiconductor.
8. power on-off control circuit according to claim 3, which is characterized in that the second metal-oxide-semiconductor switch module is also
Capacitor and the 4th protection capacitor are protected including third,
The third protection capacitor is parallel between the source electrode and grid of second metal-oxide-semiconductor；
The 4th protection capacitor is parallel between the drain electrode and grid of second metal-oxide-semiconductor.
9. power on-off control circuit according to claim 6, which is characterized in that the switching signal transfer module is also wrapped
Filter and voltage regulation resistance are included,
The filter includes the first filter capacitor and resistance, first filter capacitor and the resistor coupled in parallel, the filtering
Device is parallel between the base stage and emitter of the triode；
The voltage regulation resistance is series in the base stage of the triode, and the second control signal is transmitted via the voltage regulation resistance
To base stage.
10. power on-off control circuit according to claim 5, which is characterized in that the power on-off control circuit is also
Including the second filter capacitor and third filter capacitor,
Second filter capacitor one end is connect with the power input, other end ground connection；
Third filter capacitor one end is connect with the power output end, other end ground connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920224161.7U CN209692724U (en) | 2019-02-22 | 2019-02-22 | Power on-off control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920224161.7U CN209692724U (en) | 2019-02-22 | 2019-02-22 | Power on-off control circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209692724U true CN209692724U (en) | 2019-11-26 |
Family
ID=68602430
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920224161.7U Active CN209692724U (en) | 2019-02-22 | 2019-02-22 | Power on-off control circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209692724U (en) |
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2019
- 2019-02-22 CN CN201920224161.7U patent/CN209692724U/en active Active
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