CN2096818U - Transistor gate device - Google Patents

Transistor gate device Download PDF

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Publication number
CN2096818U
CN2096818U CN91218554U CN91218554U CN2096818U CN 2096818 U CN2096818 U CN 2096818U CN 91218554 U CN91218554 U CN 91218554U CN 91218554 U CN91218554 U CN 91218554U CN 2096818 U CN2096818 U CN 2096818U
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CN
China
Prior art keywords
thyristor
gate pole
gate
device body
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN91218554U
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Chinese (zh)
Inventor
宋晓龙
宋希振
范广英
林文彬
焦玉杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HUABEI RECTIFYING ELEMENT PLANT JINGHUA COUNTY HEBEI PROV
Original Assignee
HUABEI RECTIFYING ELEMENT PLANT JINGHUA COUNTY HEBEI PROV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HUABEI RECTIFYING ELEMENT PLANT JINGHUA COUNTY HEBEI PROV filed Critical HUABEI RECTIFYING ELEMENT PLANT JINGHUA COUNTY HEBEI PROV
Priority to CN91218554U priority Critical patent/CN2096818U/en
Publication of CN2096818U publication Critical patent/CN2096818U/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

The utility model relates to a thyristor gate pole device. The polyethylene or the alumina of good quality are adopted to make the upper cover of an outer shell and the lower bottom of the outer shell, the copper material of the silver plating of good quality is adopted to make a gate pole contact head, the leading wire of a gate pole is made of multi-strand copper wires or a single-strand copper wire of the silver plating, the leading wire has high temperature resistant feature, and the elements are assembled by the leading wire; so an integrative structure is formed and is internal-press connection type, the serial products of different specification can be made, and the thyristor gate pole device can be assembled with the anode of the anode and the cathode of the thyristor to form serial thyristors. The internal-press connection type structure replaces the welded structure of old spot-welding type, so the phenomenon of the pole-falling desquamation can be avoided. While in use, the rate of finished product can be improved by 3% when the thyristor is produced, and the work efficiency can be improved; so the utility model is an optimal mating parts for the manufacture of the thyristor.

Description

Transistor gate device
The utility model belongs to electron electric power industry thyristor parts, is specially adapted to the gate pole of high-power thyristor, makes gate pole normally open shutoff.
Before the utility model, since the sixties, the making gate circuit transistor gate uses the Welding Structure of ultrasonic spot welding always, in thyristor production, exist the phenomenon of dry joint, rosin joint, this reliable in structure performance is poor, install inconveniently, and the phenomenon that has the utmost point to come off in transportation, traction, vibration the time accounts for more than 3%, causes very big loss to country.
The purpose of this utility model is to overcome the welded weak point of above-mentioned old-fashioned spot welded type, designs a kind of gate circuit transistor gate device body of interior compression joint type structure, is used to make thyristor, to improve the unfailing performance of thyristor.
The utility model is achieved in that gate circuit transistor gate device body is integrated, and is provided with outer casing upper cover 1, shell is gone to the bottom 4, be positioned at loam cake and go to the bottom and connect the outer assembling groove that is provided with 3, the assembling convex edge 6, be positioned at the middle gate pole contact that is provided with of device body 7With chip gate pole point 8Contact, gate circuit transistor gate device body and thyristor anode 9, the thyristor negative electrode 10Constitute thyristor.Said integral structure is with outer casing upper cover, go to the bottom, gate pole contact, contact pressure spring, and gate lead is assembled into one-body molded.
Characteristics of the present utility model and advantage are: one, said outer casing upper cover, shell are gone to the bottom, and it is shaped as cylindrically, can make different size from φ 4mm to φ 14mm, can adopt polytetrafluoroethylene or aluminium oxide to make, with assembling groove with assemble the convex edge and be press-fitted and be integral.Take such structure to be convenient to assembling, select for use the above-mentioned sheathing material can be high temperature resistant, and the insulation resistance of shell is not less than 1000M Ω.Two, the gate pole contact adopts the silver-plated making contact of high-quality copper material, can be high temperature resistant.Three, the contact pressure spring can adopt carbon steel wire or alloy-steel wire nickel plating to be made into helical spring, cooperates the gate pole contact to use, and the pressure of spring is 2-5N, but its advantage is that the holding contact contact is good, makes it to conduct electricity very well.Four, gate lead adopts that multiply or single strand of copper wire are silver-plated makes high temperature resistant lead-in wire, 250 ℃ of heatproof temperature, and its sectional area is not less than 0.15mm 2, electric conductivity is good.
Further describe in conjunction with the accompanying drawings, accompanying drawing 1 is a gate circuit transistor gate device body cross-sectional schematic, and accompanying drawing 2 is gate device body rigging position schematic diagrames in thyristor.1 is outer casing upper cover among the figure, the 2nd, and the contact pressure spring, the 3rd, assembling groove, the 4th, shell is gone to the bottom, and the 5th, gate lead is connected with gate pole contact 7, and the 6th, assembling convex edge, the 7th, gate pole contact, the 8th, chip gate pole point, the 9th, thyristor anode, the 10th, thyristor negative electrode.Chip gate pole point is positioned on the chip.
The utility model has reached the purpose of design of the phase of giving, compare the utility model with traditional spot welding mode and solved the gate pole obscission, improved rate of finished products, make rate of finished products reach 100%, 5 times of operating efficiencies have been improved, save special welding equipment, reduced cost, improved the unfailing performance in transportation and the use.Examine its result such as following table after testing:
Detect examination data
Sequence number Project Establishing criteria and condition Detect the result of appraisal
1 Apparent size Visual and vernier caliper Non-cracking, come off, deformation, the universal instrument inspection is not opened circuit
2 High temperature storage GB2423.2?150±5℃?16h
3 Temperature cycles Five circulations of GB2423.22 (Na)-40 ℃+150 ℃ each 30min 2-3min transfer time
4 Vibration (sine) test and the test of gate pole hit GB2423.10 (FC) constant frequency or 100～150 HZ 200m/S 2(20g) both direction, each direction 15min band device, radiator assemble Non-cracking, come off, signal that deformation, duration of test hit instrument do not show the gate pole open circuit
Inventor's a embodiment is: according to above-mentioned design, adopt polytetrafluoroethylene making outer casing upper cover and shell to go to the bottom, adopt the silver-plated making gate pole of H62 copper material contact, adopt carbon steel wire nickel plating to make the contact pressure spring, adopt the high temperature resistant gate lead of the silver-plated making of multiply copper cash, be assembled into one, be contained in then in the thyristor of KP500A, good through trial effect.

Claims (2)

1, a kind of gate circuit transistor gate device body is characterized in that being provided with outer casing upper cover 1, shell is gone to the bottom 4, be positioned at the loam cake connection place of going to the bottom and be provided with the device groove 3, the assembling convex edge 6, be positioned at the middle gate pole contact that is provided with of device body 7, the contact pressure spring 2, gate lead 5, the gate pole contact 7With chip gate pole point 8Contact, gate circuit transistor gate device body and thyristor anode 9, the thyristor negative electrode 10Constitute thyristor.
2, according to claim 1Said device body is characterized in that described outer casing upper cover shell goes to the bottom 4It is shaped as cylindrical, can make different size from φ 4mm to φ 14mm, can take to make of polytetrafluoroethylene or aluminium oxide.
CN91218554U 1991-07-24 1991-07-24 Transistor gate device Withdrawn CN2096818U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN91218554U CN2096818U (en) 1991-07-24 1991-07-24 Transistor gate device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN91218554U CN2096818U (en) 1991-07-24 1991-07-24 Transistor gate device

Publications (1)

Publication Number Publication Date
CN2096818U true CN2096818U (en) 1992-02-19

Family

ID=4926007

Family Applications (1)

Application Number Title Priority Date Filing Date
CN91218554U Withdrawn CN2096818U (en) 1991-07-24 1991-07-24 Transistor gate device

Country Status (1)

Country Link
CN (1) CN2096818U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111681995A (en) * 2020-04-29 2020-09-18 株洲中车时代半导体有限公司 Thyristor element, thyristor element assembly structure and soft starter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111681995A (en) * 2020-04-29 2020-09-18 株洲中车时代半导体有限公司 Thyristor element, thyristor element assembly structure and soft starter
CN111681995B (en) * 2020-04-29 2022-09-09 株洲中车时代半导体有限公司 Thyristor element, thyristor element assembly structure and soft starter

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PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee