CN209669348U - A kind of chip bench and its device - Google Patents
A kind of chip bench and its device Download PDFInfo
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- CN209669348U CN209669348U CN201920181217.5U CN201920181217U CN209669348U CN 209669348 U CN209669348 U CN 209669348U CN 201920181217 U CN201920181217 U CN 201920181217U CN 209669348 U CN209669348 U CN 209669348U
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- chip bench
- diamond film
- disk
- diamond
- plasma
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Abstract
The utility model provides a kind of chip bench, and for carrying disk, the chip bench upper surface is rounded, and the chip bench diameter is greater than the disk, and the circular edge of the chip bench is equipped with an annular pit, fills organic and/or inorganic materials in the pit.Since the plasma ball of microwave-excitation is the non-uniform spherical of energy density, it is also unevenly distributed for leading to the thermal exposure to workpiece on chip bench.In order to guarantee that there is a relatively uniform consistent temperature on entire chip bench surface, utilize the highly thermally conductive ability of diamond, using diamond disk as chip bench surface Heat Conduction Material, here is the heat-conducting metal for being embedded with water condensing tube, there is the metallic film of one layer of raising adhesive force between diamond disk and heat-conducting metal.Diamond disk edge and substrate edge of table have an annular gap, are filled with a kind of high temperature resistant, inert inorganic material in gap.
Description
Technical field
The utility model belongs to vacuum microelectronics technique field, and in particular to a kind of chip bench.
Background technique
Plasma is the 4th state as substance after solid-state, liquid, gaseous state, is had widely in many fields
Using.And substance to be made to be in plasmoid, it is necessary to provide certain energy.Microwave compares as a kind of electromagnetic wave
Gas is readily excited into plasmoid, therefore microwave plasma body technique has obtained widely answering in many fields
With.
Microwave plasma CVD (MPCVD) device generally comprises microwave system, vacuum system, air supply system
And plasma-reaction-chamber, a spinning chip bench, for preparing diamond film, microwave are equipped in plasma-reaction-chamber
The microwave that system generates enters plasma-reaction-chamber, and the gas for exciting air supply system to provide above spinning chip bench generates
Plasma ball, plasma ball are tightly attached to film forming substrate material surface, by adjusting different reaction gas and adjustment etc.
The technological parameter of gas ions, can be in chip bench surface depositing diamond film.
Due to microwave plasma excitated characteristic, above chip bench, most close to chip bench middle section electric field strength
Greatly；It is weaker close to chip bench fringe region electric field strength；Therefore spherical shape is often presented with microwave excited plasma.Traditional base
Piece platform material is stainless steel or metal material resistant to high temperature such as tungsten or molybdenum.It illustrates below and different materials is concentrated to exist
Thermal conductivity under assigned temperature: aluminium: 230W/m.K (300 DEG C)；Copper: 377W/m.K (100 DEG C)；Silver: 412W/m.K (100 DEG C)；
Stainless steel: 16W/m.K (20 DEG C)；Tungsten: 180W/m.K (25 DEG C)；Molybdenum: 142W/m.K (25 DEG C)；Diamond: 1800-2000W/
m.K(25℃).Since the thermal conductivity of tungsten, molybdenum, the materials such as stainless steel is lower, using these materials as microwave plasma chip bench
When, under microwave plasma irradiation, chip bench face center region and fringe region have obvious temperature difference, it is difficult to keep
The uniformity of temperature.
Utility model content
Technical problem to be solved in the utility model is aiming at the above shortcomings existing in the prior art, to provide a kind of base
Piece platform, for carrying disk, the chip bench upper surface is rounded, and the chip bench diameter is greater than the disk, the substrate
The circular edge of platform is equipped with an annular pit, fills organic and/or inorganic materials in the pit.
Optionally, chip bench upper surface is circular diamond film, and diameter is more smaller than chip bench diameter, diamond film edge
There is an annular pit with substrate edge of table；In pit be filled with specific inorganic material, the filling of inorganic material be in order to
Following condensing metal is protected to avoid directly generating unnecessary pollution with the Plasma contact of microwave-excitation.
Optionally, diamond film is that polishing both surfaces are smooth or polish on one side smooth, and what is do not polished on one side has certain thickness
The diamond film of degree；Using the side of polishing upwards as the upper surface of chip bench.The thickness of diamond film is generally 1.0-2.5
Between millimeter.
Optionally, diamond film and substrate edge of table have the annular gap of a 1.0-3.0mm, gap depth and diamond
Film thickness is consistent.
Optionally, there are a metal coating of a layer specific, generally metal Cr in diamond film lower surface, Ti simple substance or they
Alloy, for thickness generally between 0.3-10.0 microns, the effect of the metal coating is to improve diamond film and following condensation is golden
Bond strength between category.
Optionally, lower surface has the diamond film of special metal coating, is close to a kind of metal object below as leading
Hot material is embedded with the water condensing tube of condensation in metal object.
The utility model additionally provides the chip bench for using microwave plasma CVD device, the device
Including microwave system, vacuum system, air supply system and plasma-reaction-chamber, a spinning base is equipped in plasma-reaction-chamber
Piece platform, the microwave that microwave system generates in the course of work enter plasma-reaction-chamber, excite and supply above spinning chip bench
The gas that gas system provides generates plasma ball.
In order to guarantee that there is a relatively uniform consistent temperature on entire chip bench surface, the highly thermally conductive energy of diamond is utilized
Power, using diamond disk as chip bench surface Heat Conduction Material, here is the heat-conducting metal for being embedded with water condensing tube, diamond disk
There is the metallic film of one layer of raising adhesive force between heat-conducting metal.Diamond disk edge and substrate edge of table have an annular
Gap, a kind of high temperature resistant, inert inorganic material are filled in gap.
Detailed description of the invention
Fig. 1 is the structural schematic diagram on chip bench surface；
Fig. 2 is temperature measuring point position view in embodiment 1；
Appended drawing reference: 1. chip bench；2. water condensing tube；3. heat-conducting metal；4. metallic film；5.CVD diamond film；6. filling out
Fill inorganic material.
Specific embodiment
Further illustrate the technical solution of the utility model below with reference to the accompanying drawings and specific embodiments.It can manage
Solution, specific embodiment described herein are used only for explaining the utility model, rather than the restriction to the utility model.Separately
It is outer it should also be noted that, illustrate only part relevant to the utility model for ease of description, in attached drawing and it is not all in
Hold.
It is used for as shown in Figure 1, providing a kind of chip bench (1) using in microwave plasma CVD device,
The device includes microwave system, vacuum system, air supply system and plasma-reaction-chamber, and one is equipped in plasma-reaction-chamber certainly
Rotary substrate platform, the microwave that microwave system generates in the course of work enters plasma-reaction-chamber, above spinning chip bench
The gas for exciting air supply system to provide generates plasma ball.Chip bench upper surface is circular diamond film, and diameter compares substrate
Platform diameter is smaller, and an annular pit is then formd between diamond film edge and substrate edge of table and (forms the pit
Purpose be that diamond film is avoided directly to contact with substrate edge of table, can be prevented in this way because of diamond film and chip bench material
Between because thermal expansion coefficient on difference and cause the temperature difference of high temperature or room temperature fluctuation in because thermal stress also damage gold
Hard rock film)；Filled with specific inorganic material (6), (material can cover following heat-conducting metal surface, avoid microwave in pit
The plasma and heat-conducting metal of excitation are directly basic and generate impurity).Diamond film (5) be polishing both surfaces it is smooth or one side
Polish smooth, what is do not polished on one side has certain thickness diamond film；Using the side of polishing upwards as the upper of chip bench
Surface.The thickness of diamond film is generally between 1.0-2.5 millimeters.Diamond film and substrate edge of table have a 1.0-3.0mm
Annular gap, gap depth is consistent with diamond film thickness.There is the metal coating of a layer specific in diamond film lower surface
(4), generally metal Cr, Ti simple substance or their alloy, thickness (metal coating energy generally between 0.3-10.0 microns
Improve the binding force between diamond film and heat-conducting metal).Lower surface has the diamond film of special metal coating, below tightly
Close to a kind of metal object, as heat-conducting metal (3), (material is a kind of alloy based on tin, and the fusing point of the alloy exists under normal pressure
Between 250-400 DEG C), the water condensing tube (2) of condensation is embedded in metal object.
The utility model embodiment provides one kind in microwave CVD, and chip bench surface temperature keeps uniform structure.
Microwave plasma CVD device used in the utility model is stainless steel water cooling cavity type microwave plasma chemical
Vapor phase growing apparatus, spinning chip bench diameter are 60mm, and microwave maximum power is 5000W.For test temperature effect, In
Chip bench surface lower portions have buried 3 thermocouple temperature measuring points, position as shown in Figure 2: O point is chip bench the center point；A point distance O point
At 20mm；At B point distance O point 40mm.That excite plasma is H2(purity 99.999%), CH4(purity 99.9999%).
Embodiment one
Diamond disk is diameter 55mm, and the two-sided smooth circle of thickness 1.5mm is prepared in lower surface with PVD method
1.2 microns thick of Cr film, edge slot are filled with the alumina particle of 80 mesh.Microwave power 4000W, air pressure 12.0kPa,
Gas flow H2: CH4=200:4.0sccm (sccm: sccm).Work temperature-measuring results after ten minutes: TO-
TA< 1.0 DEG C (lower than in thermocouple measurement error range)；TO-TB< 1.0 DEG C (lower than in thermocouple measurement error range).
Embodiment two
Diamond disk is diameter 55mm, and the smooth circle in the upper surface of thickness 1.8mm does not polish in lower surface, not
Polished surface is prepared for 1.0 microns thick of Ti film with PVD method, and edge slot is filled with the alumina particle of 80 mesh.Microwave
Power 3500W, air pressure 10.0kPa, gas flow H2: CH4=200:4.0sccm (sccm: sccm).Work
Make temperature-measuring results after ten minutes: TO-TA< 1.0 DEG C (lower than in thermocouple measurement error range)；TO-TB< 1.0 DEG C (are lower than thermoelectricity
Within the scope of even measurement error).
The above is only the preferred embodiments of the utility model, are not intended to limit the utility model, all in the utility model
Spirit and principle within, any modification, equivalent replacement, improvement and so on should be included in the protection model of the utility model
Within enclosing.
Claims (10)
1. a kind of chip bench, for carrying disk, which is characterized in that the chip bench upper surface is rounded, and the chip bench is straight
Diameter is greater than the disk, and the circular edge of the chip bench is equipped with an annular pit, is filled with inorganic material in the pit
Material.
2. chip bench according to claim 1, it is characterised in that: the disk is that polishing both surfaces are smooth or one side polishes
Diamond film that is smooth, not polishing on one side；The side of polishing is used as to the upper surface of chip bench upwards.
3. chip bench according to claim 2, it is characterised in that: the diamond film with a thickness of 1.0-2.5 millimeter
Between.
4. chip bench according to claim 2, it is characterised in that: the diamond film and substrate edge of table have a 1.0-
The annular gap of 3.0mm.
5. chip bench according to claim 4, it is characterised in that: the annular gap depth and diamond film thickness are kept
Unanimously.
6. chip bench according to claim 2, it is characterised in that: diamond film lower surface has the metal of a layer specific to apply
Layer, with a thickness of 0.3-10.0 microns.
7. chip bench according to claim 2 or 4, it is characterised in that: in the annular gap of diamond film and chip bench
Between be equipped with a kind of inorganic non-metallic material resistant to high temperature.
8. the chip bench according to claim 2 or 6, it is characterised in that: be close to a kind of metal below the diamond film
Object is embedded with the water condensing tube of condensation as Heat Conduction Material in metal object.
9. chip bench according to claim 1, it is characterised in that: the disk is diamond disk.
10. a kind of device for preparing diamond film, which is characterized in that including such as described in any item chip bench of claim 1-9:
It further include microwave system, vacuum system, air supply system and plasma-reaction-chamber, wherein the chip bench is arranged in plasma
In precursor reactant room, the microwave energy that microwave system generates in the course of work enters plasma-reaction-chamber, excites above chip bench
The gas that air supply system provides generates plasma ball.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920181217.5U CN209669348U (en) | 2019-02-01 | 2019-02-01 | A kind of chip bench and its device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920181217.5U CN209669348U (en) | 2019-02-01 | 2019-02-01 | A kind of chip bench and its device |
Publications (1)
| Publication Number | Publication Date |
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| CN209669348U true CN209669348U (en) | 2019-11-22 |
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| CN201920181217.5U Active CN209669348U (en) | 2019-02-01 | 2019-02-01 | A kind of chip bench and its device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111441036A (en) * | 2019-02-01 | 2020-07-24 | 上海征世科技有限公司 | Substrate table and device thereof |
| CN111962048A (en) * | 2020-07-16 | 2020-11-20 | 上海征世科技有限公司 | Substrate table and equipment for microwave plasma equipment |
-
2019
- 2019-02-01 CN CN201920181217.5U patent/CN209669348U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111441036A (en) * | 2019-02-01 | 2020-07-24 | 上海征世科技有限公司 | Substrate table and device thereof |
| CN111441036B (en) * | 2019-02-01 | 2024-09-20 | 上海征世科技股份有限公司 | Substrate table and device thereof |
| CN111962048A (en) * | 2020-07-16 | 2020-11-20 | 上海征世科技有限公司 | Substrate table and equipment for microwave plasma equipment |
| CN111962048B (en) * | 2020-07-16 | 2021-08-20 | 上海征世科技股份有限公司 | Substrate table and equipment for microwave plasma equipment |
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Address after: 201799 west side of Building 2, No. 500, Huapu Road, Qingpu District, Shanghai Patentee after: Shanghai Zhengshi Technology Co.,Ltd. Address before: 201799 west side of Building 2, No. 500, Huapu Road, Qingpu District, Shanghai Patentee before: SHANGHAI ZHENGSHI TECHNOLOGY Co.,Ltd. |