CN209526079U

CN209526079U - A kind of TVS device chip

Info

Publication number: CN209526079U
Application number: CN201920093479.6U
Authority: CN
Inventors: 胡光亮; 黄志诚
Original assignee: SHANGHAI LEIDITECH ELECTRONIC TECHNOLOGY Co Ltd
Current assignee: SHANGHAI LEIDITECH ELECTRONIC TECHNOLOGY Co Ltd
Priority date: 2019-01-21
Filing date: 2019-01-21
Publication date: 2019-10-22
Anticipated expiration: 2029-01-21

Abstract

The utility model discloses a kind of TVS device chips of TVS device technical field, including package casing, TVS chip layer, overcurrent chip layer, first pin and second pin, the inner cavity setting TVS chip layer and overcurrent chip layer of the package casing, the bottom of the TVS chip layer connects one end of the first pin by wiring, the top of the overcurrent chip layer connects one end of second pin by wiring, pass through two-way chip design inside novel TVS, chip can satisfy transient voltage clamper protective effect all the way, chip is in lasting overcurrent all the way, itself is disconnected, and by resetting the high molecular polymer in overcurrent filler, after power-off and troubleshooting, it is low that it collects temperature drop, the density of states increases, phase transformation is restored, nanocrystal is reduced into chain conductive path, TVS device is set to revert to normal condition , to guarantee the short circuit that will not cause circuit, not will lead to the fire of circuit.

Description

A kind of TVS device chip

Technical field

The utility model relates to TVS device technical field, specially a kind of TVS device chip.

Background technique

Transient Suppression Diode TVS product is widely used in solar inverter, set-top box, MOSFET protection, industry control In the application of system, telecomm base station and Power over Ethernet etc, in practical applications, when pulse energy can bear more than TVS pipe Energy when, TVS pipe will generate electrical over-stress damage, so as to cause TVS pipe failure.The most common failure mode of TVS pipe is Short-circuit failure, at this point, TVS pipe will not return to state, but be constantly in short-circuit shape even if impulse circuit is decayed State causes electronic equipment can not normal use, it is also possible to because current or voltage becomes to change the circuit structure of script Change causes remaining electronic component to be destroyed, and violates the use original intention of TVS pipe.If TVS pipe is because short circuit current is excessive, temperature is excessively high And when bursting, be at this time open circuit failure, and burst itself can influence to electronic equipment and electronic component will be even more serious, Even cause other unpredictable losses.And existing TVS in the market is widely used, but often have design not enough, It is breakdown, short circuit is formed, whole circuit board is influenced, will form spark or fire etc..For this purpose, it is proposed that a kind of TVS device Manufacturing method of chip.

Utility model content

The purpose of this utility model is to provide a kind of TVS device chips, to solve mentioned above in the background art ask Topic.

To achieve the above object, the utility model provides the following technical solutions: a kind of TVS device chip, including encapsulation is outer Shell, TVS chip layer, overcurrent chip layer, the first pin and second pin, the package casing inner cavity setting TVS chip layer with Overcurrent chip layer, the bottom of the TVS chip layer connects one end of the first pin by wiring, and the other end of the first pin prolongs Input terminal of the outside as TVS device of package casing is extended to, the top of the overcurrent chip layer is drawn by wiring connection second One end of foot, and the other end of second pin extends to output end of the outside as TVS device of package casing.

Further, TVS silicon chip, and TVS chip is respectively set in the inside of the TVS chip layer and overcurrent chip layer Layer, overcurrent chip layer, the first pin and second pin use parallel.

Further, first pin is all made of Cu alloy material with second pin and is made.

Further, first pin and second pin have one end made of copper alloy to be set as linear, waveform Or one of spiral shape.

Further, the inner cavity setting of the overcurrent chip layer resets overcurrent filler, and resetting overcurrent filler is height Molecularly Imprinted Polymer and conductive nano crystal grain form.

Further, the silicon chip that the silicon chip rated current in the TVS chip layer is less than in overcurrent chip layer is specified Electric current.

Further, a kind of manufacturing method of TVS device chip:

S1: the test of quality is carried out to silicon wafer, and will test out the chip damaged in silicon wafer and be marked；

Bad piece can be marked with magnetic ink when bad piece being marked in this step, also can use computer Establish a chip position and test structure computer graphical, using computer by bad chip computer graphical coordinate On be marked；

S2: silicon wafer bottom surface is affixed on blue film, is divided into fritter one by one, and the chip of damage is chosen；

S3: good chip and sticking blue film in the top surface of chip in picking chip, chip turned upside down, bottom before removing Blue film on face；

S4: the silicon chip of two kinds of different rated current is selected, two kinds of silicon chips are welded on by lead frame by machine On pedestal, TVS chip layer and overcurrent chip layer are formed；

S5: one end of the first pin is welded on TVS chip layer and is passed through on the limit hole being lithographically formed, by second pin One end is welded on overcurrent chip layer and passes through on the limit hole being lithographically formed；

S6: the fill material in the inner cavity of overcurrent chip layer and the interlayer of silicon chip；

S7: will be drawn with TVS chip layer, overcurrent chip layer, the first pin and second by patch encapsulation or plug-in unit encapsulation The pedestal of foot is mounted in package casing；

S8: finally testing TVS device, and good product is compiled bag.

Compared with prior art, the utility model has the beneficial effects that purpose of the utility model is to solve markets The failure of upper majority TVS device forms short circuit, causes circuit malfunction, causes fire, is set by two-way chip inside novel TVS Meter, chip can satisfy transient voltage clamper protective effect all the way, and in lasting overcurrent, itself is disconnected chip, and is passed through all the way The high molecular polymer in overcurrent filler is resetted, after power-off and troubleshooting, collection temperature drop is low, and the density of states increases, phase transformation It restores, nanocrystal is reduced into chain conductive path, TVS device is made to revert to normal condition, to guarantee that circuit will not be caused Short circuit, not will lead to the fire of circuit.

Detailed description of the invention

FIG. 1 is a schematic structural view of the utility model.

In figure: 1, package casing；2, TVS chip layer；3, overcurrent chip layer；4, the first pin；5, second pin.

Specific embodiment

The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work Every other embodiment obtained, fall within the protection scope of the utility model.

Referring to Fig. 1, the utility model provides a kind of technical solution: a kind of TVS device chip, including package casing 1, TVS chip layer 2, overcurrent chip layer 3, the first pin 4 and second pin 5, the inner cavity setting TVS chip layer 2 and mistake of package casing 1 Chip layer 3 is flowed, the bottom of TVS chip layer 2 connects one end of the first pin 4 by wiring, and the other end of the first pin 4 extends The top of input terminal to the outside of package casing 1 as TVS device, overcurrent chip layer 3 connects second pin 5 by wiring One end, and the other end of second pin 5 extends to output end of the outside as TVS device of package casing 1.

TVS silicon chip, and TVS chip layer 2, overcurrent chip is respectively set in the inside of TVS chip layer 2 and overcurrent chip layer 3 The 3, first pin 4 of layer and second pin 5 use parallel, using connection type in parallel, when the transient state electricity in circuit When pressing the breakdown voltage more than the silicon chip in TVS chip layer 2, the silicon chip crossed in TVS chip layer 2, which is switched on, forms clamper electricity Pressure, thus to circuit carry out protective effect, while the reset overcurrent filler in overcurrent chip layer 3 due to the reaction time it is slow, no It can react to transient voltage, not will form pressure drop, so that the silicon chip that will not influence in overcurrent chip layer 3 works normally；

First pin 4 is all made of Cu alloy material with second pin 5 and is made, the first pin 4 with it is a certain in second pin 5 Fragment position is made of copper alloy, and copper alloy can be set in the first pin 4 and the different location in second pin 5, It can be arranged on the first pin 4 or the one of pin of second pin 5, it can also be simultaneously in the first pin 4 and second pin 5 On be respectively provided with, copper alloy can play dual protecting effect to circuit, and the rated current of copper alloy should be greater than overcurrent chip The rated current of overcurrent filler is resetted in layer 3；

First pin 4 has one end made of copper alloy to be set as in linear, waveform or spiral shape with second pin 5 One kind increasing the anti-sense of copper alloy, and the rate of current waveform reduces, to effectively extend electric current wave energy on copper alloy Time integral；

Overcurrent chip layer 3 inner cavity setting reset overcurrent filler, and reset overcurrent filler be high molecular polymer with Conductive nano crystal grain composition, when surge voltage is excessive, and the silicon chip in TVS chip layer 2 cannot withstand voltage, TVS chip layer 2 Middle silicon chip is pierced, and is just had lasting electric current and is passed through, and the high-tension current in TVS device, which flows through, resets overcurrent filler, multiple High molecular polymer in the overcurrent filler of position flows through collection Wen Shenggao, and when reaching Curie temperature, the density of states is reduced rapidly, phase Become and increase, the electrically conductive links that internal conductive nano crystal grain is formed become or are broken in snowslide state, and TVS device adjourns height in phase step type Resistance state, electric current is by rapid pinch off, so that carrying out fast and accurate limitation and protection, small electric current to circuit makes TVS device It is constantly in guard mode, after power-off and troubleshooting, collection temperature drop is low, and the density of states increases, and phase transformation is restored, and nanocrystal is also Original reverts to normal condition at chain conductive path, TVS device；

Silicon chip rated current in TVS chip layer 2 is less than the silicon chip rated current in overcurrent chip layer 3, by not The rated current of silicon chip determines the maximum current ginseng of the doping level of silicon chip in overcurrent chip layer 3 in same TVS chip layer 2 Number, to meet when TVS device failure, chip short circuit causes high current, and overcurrent chip layer is disconnected more than rated current, is formed The safety of entire circuit is protected in open circuit；

A kind of manufacturing method of TVS device chip:

If using directly bad piece is marked with magnetic ink in step S1, by silicon when scribing in this step Piece scratches completely；And if the label carried out using computer to chip in step S1, scribing depth four is used in this step / mono- arrives the scribing process of one third, not exclusively scratches the reliability that can be improved when turning over film in this way；

If the label for carrying out chip using computer in step S1, need to utilize bad chip in this step Magnetic ink gets label ready, then sliver, and bad chip is taken out with machine, obtains GPP bis- that top surface can weld and good Pole pipe chip；

S4: the silicon chip of two kinds of different rated current is selected, two kinds of silicon chips are welded on by lead frame by machine On pedestal, TVS chip layer 2 and overcurrent chip layer 3 are formed；

Thimble is needed below up to push up good chip from blue film in this step, while the vacuum slot of machine is past by chip The top surface of chip, is then welded on the pedestal of lead frame by upper suction, the diode chip for backlight unit of the top surface crawl step S3 welding；

S5: one end of the first pin 4 is welded on TVS chip layer 2 and is passed through on the limit hole being lithographically formed, by second pin 5 one end is welded on overcurrent chip layer 3 and passes through on the limit hole being lithographically formed；

S6: the fill material in the inner cavity of overcurrent chip layer 3 and the interlayer of silicon chip；

S7: TVS chip layer 2, overcurrent chip layer 3, the first pin 4 and second will be had by patch encapsulation or plug-in unit encapsulation The pedestal of pin 5 is mounted in package casing 1；

S8: finally testing TVS device, and good product is compiled bag.

While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art, It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.

Claims

1. a kind of TVS device chip, including package casing (1), TVS chip layer (2), overcurrent chip layer (3), the first pin (4) With second pin (5), it is characterised in that: inner cavity setting TVS chip layer (2) of the package casing (1) and overcurrent chip layer (3), the bottom of the TVS chip layer (2) connects the one end of the first pin (4), and the other end of the first pin (4) by wiring Input terminal of the outside of package casing (1) as TVS device is extended to, the top of the overcurrent chip layer (3) is connected by wiring One end of second pin (5) is connect, and the other end of second pin (5) extends to the outside of package casing (1) as TVS device Output end.

2. a kind of TVS device chip according to claim 1, it is characterised in that: the TVS chip layer (2) and overcurrent core TVS silicon chip, and TVS chip layer (2), overcurrent chip layer (3), the first pin (4) and second is respectively set in the inside of lamella (3) Pin (5) uses parallel.

3. a kind of TVS device chip according to claim 1, it is characterised in that: first pin (4) and second pin (5) Cu alloy material is all made of to be made.

4. a kind of TVS device chip according to claim 3, it is characterised in that: first pin (4) and second pin (5) one end made of copper alloy is set as one of linear, waveform or spiral shape.

5. a kind of TVS device chip according to claim 1, it is characterised in that: the silicon core in the TVS chip layer (2) Piece rated current is less than the silicon chip rated current in overcurrent chip layer (3).