CN209515735U - Backlight and liquid crystal display - Google Patents
Backlight and liquid crystal display Download PDFInfo
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- CN209515735U CN209515735U CN201821634406.5U CN201821634406U CN209515735U CN 209515735 U CN209515735 U CN 209515735U CN 201821634406 U CN201821634406 U CN 201821634406U CN 209515735 U CN209515735 U CN 209515735U
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- silica gel
- backlight
- circuit substrate
- led chip
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 239000000741 silica gel Substances 0.000 claims abstract description 75
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000843 powder Substances 0.000 claims description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000005142 aphototropism Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- Planar Illumination Modules (AREA)
Abstract
The utility model relates to a kind of backlight and liquid crystal displays.The backlight includes: circuit substrate, multiple LED chips and the first layer of silica gel；The multiple LED chip die bond is on the circuit substrate, first layer of silica gel is coated on the circuit substrate and wraps up the multiple LED chip, first layer of silica gel dissipates the light issued from LED chip more, increases the uniformity of luminance of backlight, reduces the thickness of backlight module.
Description
Technical field
The utility model relates to plane display fields, more particularly to a kind of backlight and liquid crystal display.
Background technique
Liquid crystal display (LCD) is one of current most important display technology, and liquid crystal itself does not have without the characteristics of luminescence,
Need additional backlight with provide show required for light, LED because its energy conservation, the service life is long the features such as, become a kind of ideal
LCD backlight source.
There are mainly two types of modes for LED backlight, one is side-edge type backlight, another formula direct-light-type backlight, and the two
Respectively there are advantage and disadvantage.Direct-light type LED backlight mould group is needed due to the limitation of number of LED light sources by increasing backlight and diffuser plate
The distance between, that is, increase light mixing distance to increase the uniformity of the light issued from diffuser plate, obtains uniform area source, simultaneously
Limited number of LED light sources also limits the effect of local dimming.
Therefore, that there are the thickness of backlight module is thicker, local dimming is bad asks for this down straight aphototropism mode set
Topic.
Utility model content
Based on this, it is necessary to backlight module in traditional technology thickness is thicker, non-uniform light aiming at the problem that, provide one
Kind backlight and liquid crystal display.
A kind of backlight, comprising: circuit substrate, multiple LED chips and the first layer of silica gel；The multiple LED chip die bond
On the circuit substrate, first layer of silica gel is coated on the circuit substrate and wraps up the multiple LED chip.
In backlight provided in this embodiment, the backlight includes circuit substrate, multiple LED chips and the first silica gel
Layer, the first layer of silica gel dissipate the light issued from LED chip more, increase the uniformity of luminance of backlight, reduce backlight
The thickness of mould group.
The backlight further includes phosphor powder layer in one of the embodiments, and the phosphor powder layer is coated in described the
In one layer of silica gel, the thickness of the phosphor powder layer is less than 0.15mm.
In backlight provided in this embodiment, the backlight further includes phosphor powder layer, and phosphor powder layer makes from LED chip
The light of sending is uniformly irradiated on phosphor powder layer after the diverging of the first layer of silica gel, further improves the hair of backlight
Optical uniformity；In addition, the coating fluorescent powder layer in cured first layer of silica gel, convenient for controlling the same type for including the backlight
Number different product between color homogeneity.
The surfacing of first layer of silica gel in one of the embodiments, and the surface packet of first layer of silica gel
Include channel patterns；The depth of the channel patterns is less than 50um.
The backlight further includes the second layer of silica gel being arranged on the phosphor powder layer in one of the embodiments,；
Second layer of silica gel is to be mixed with the layer of silica gel of spread powder.
The silica gel refractive index of first layer of silica gel is greater than 1.4 in one of the embodiments, first layer of silica gel
Thickness is greater than 0.2mm.
The length of the LED chip is less than 500um in one of the embodiments, and the width of the LED chip is less than
The height of 500um, the LED chip are less than 200um.
In one of the embodiments, the multiple LED chip in a manner of array arrangement die bond on the circuit substrate.
The spacing between the multiple LED chip adjacent chips is less than 5mm in one of the embodiments,.
The thickness of the circuit substrate is less than 0.5mm in one of the embodiments,.
A kind of liquid crystal display, including backlight provided in display panel and above-described embodiment.
Detailed description of the invention
Fig. 1 is the backlight schematic diagram that one embodiment provides；
Fig. 2 is the backlight schematic diagram that one embodiment provides；
Fig. 3 is the channel patterns for the first silica gel layer surface that one embodiment provides；
Fig. 4 is cured first layer of silica gel that one embodiment provides；
Fig. 5 is the first layer of silica gel of the surfacing that one embodiment provides；
Fig. 6 is the circuit substrate that the die bond that one embodiment provides has multiple LED chips.
Description of symbols:
Backlight 10；Circuit substrate 100；Multiple LED chips 200；
First layer of silica gel 300；Phosphor powder layer 400.
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the objects, technical solutions and advantages of the application are more clearly understood
The application is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the application, not
For limiting the application.
Backlight and liquid crystal display provided by the embodiments of the present application, can be applied to plane display field.But it is traditional
The direct-light-type backlight of technology needs to increase light mixing distance, obtains uniform area source, and larger light mixing distance causes backlight mould
The problem of organizing thicker thickness, non-uniform light.Backlight and liquid crystal display provided by the embodiments of the present application, it is intended to solve tradition
Technical technical problem as above.
In order to which the objects, technical solutions and advantages of the application are more clearly understood, pass through following embodiments and combine attached
Figure, technical solutions in the embodiments of the present application are further described.It should be appreciated that specific embodiment described herein is only used
In explanation the application, but it is not used to limit the application.
Fig. 1 is the backlight schematic diagram that one embodiment provides.As shown in Figure 1, the backlight 10 includes: circuit substrate
100, multiple LED chips 200 and the first layer of silica gel 300；The multiple 200 die bond of LED chip on the circuit substrate 100,
First layer of silica gel 300 is coated on the circuit substrate 100 and wraps up the multiple LED chip 200.
In the present embodiment, the circuit substrate 100 can be integrated with driving circuit or external drive circuit, the driving circuit
Multiple LED chips 200 can be driven, can integrally be driven, can also be driven with subregion or single drives.Optionally, the circuit
Substrate 100 can be soft board, be also possible to hardboard.The multiple LED chip 200, for generating light source.The multiple LED core
Piece is set on the circuit substrate 100.Optionally, which can be inverted structure, be also possible to vertical structure.
First layer of silica gel 300, for breaing up the light issued from multiple LED chips 200.First layer of silica gel 300 is coated in institute
It states on circuit substrate 100, and wraps up the multiple LED chip 200.Optionally, which can be
Transparent silica gel is also possible to be mixed with the silica gel of spread powder.Optionally, coating silica gel can use the steel mesh printing side of large opening
Formula can also use mode for dispensing glue.
Backlight provided in this embodiment, including circuit substrate, multiple LED chips and the first layer of silica gel, multiple LED chips
It is arranged on circuit substrate, the first layer of silica gel is coated on circuit substrate and wraps up multiple LED chips, issues from LED chip
Diverging of the light Jing Guo the first layer of silica gel, makes to obtain light more evenly, increases the uniformity of luminance of backlight；Also, cured
One layer of silica gel can play a protective role to multiple LED chips of the die bond on circuit substrate, prevent multiple LED chips by outer
Power effect is fallen.
Fig. 2 is the backlight schematic diagram that one embodiment provides.As shown in Fig. 2, the backlight 10 further includes phosphor powder layer
400, for the phosphor powder layer 400 coated in first layer of silica gel 300, the thickness of the phosphor powder layer 400 is less than 0.15mm.
Specifically, the coating fluorescent powder in first layer of silica gel 300, obtains the phosphor powder layer that thickness is less than 0.15mm
400, so that the light issued from multiple LED chips 200 is uniformly irradiated to fluorescent powder after the diverging of the first layer of silica gel 300
On layer 400, fluorescent powder, which is stimulated, issues yellow light, green light or feux rouges and remaining blue light generation white light, obtains shining uniform
White light backlight 10.Optionally, coating fluorescent powder layer 400 can be using spraying coating process, can also be using patch fluorescent film
Method.
In the present embodiment, the phosphor powder layer coated in the first layer of silica gel makes the light issued from LED chip by first
It after the diverging of layer of silica gel, is uniformly irradiated on phosphor powder layer, fluorescent powder being stimulated more evenly further improves backlight
Uniformity of luminance；In addition, the coating fluorescent powder layer in cured first layer of silica gel, includes the same of the backlight convenient for controlling
Color homogeneity between the different product of one model.
In one embodiment, which further includes the second layer of silica gel being arranged on phosphor powder layer 400；Described
Second silica gel layer is the layer of silica gel for being mixed with spread powder.
Specifically, the second layer of silica gel for being mixed with spread powder can also be arranged, further above the phosphor powder layer 400
The direction for breaing up light promotes the uniformity of luminance of backlight.
Fig. 3 is the channel patterns for the first silica gel layer surface that one embodiment provides, and Fig. 4 consolidates for what one embodiment provided
The first layer of silica gel changed, Fig. 5 are the first layer of silica gel of the surfacing that one embodiment provides.In one embodiment, one is asked
And referring to Fig. 3, Fig. 4 and Fig. 5, the surfacing of first layer of silica gel 300, and the surface of first layer of silica gel 300 includes
Channel patterns；The depth of the channel patterns is less than 50um；The silica gel refractive index of first layer of silica gel 300 is described greater than 1.4
The thickness of first layer of silica gel is greater than 0.2mm.
Specifically, applying refractive index on circuit substrate 100 is greater than 1.4, thickness is greater than the silica gel of 0.2mm, the first silica gel
After 300 solidification of layer, the first layer of silica gel 300 is handled using grinding technics, surfacing is obtained, is roughened and be thinned thickness
The first layer of silica gel 300 further V-shape machine cuts knife is utilized to the first layer of silica gel 300 of grinding roughening, the
The surface scribing intertexture groove of one layer of silica gel 300, by V word groove to 300 patterned surface of the first layer of silica gel, channel patterns
Depth is less than 50um.Optionally, V word groove can form the micro-patterns such as triangle, rectangle, diamond shape.
In the present embodiment, using grinding technics handle the first layer of silica gel surfacing, be roughened and be thinned thickness, table
The first layer of silica gel that face is smooth, is roughened can upset the direction of the light issued from the first silica gel layer surface, make to obtain light more evenly,
The first layer of silica gel for being thinned thickness can reduce the thickness of backlight module；By V word groove to the exterior view of the first layer of silica gel
Case increases the uniformity of luminance of backlight so that further homogenizing from the light that Silica Surface issues.
Fig. 6 is the circuit substrate that the die bond that one embodiment provides has multiple LED chips.Optionally, in one embodiment
In, Fig. 6 is referred to, the length of the LED chip 200 is less than 500um, and the width of the LED chip 200 is less than 500um, described
The height of LED chip 200 is less than 200um.Specifically, the multiple LED chips 200 of die bond, each LED core on circuit substrate 100
The length of piece 200 is less than 500um, and width is less than 500um, is highly less than 200um.
In the present embodiment, the length of each LED chip is less than 500um, and width is less than 500um, is highly less than 200um,
Lesser LED chip uses lower operating current, helps to improve the luminous efficiency of chip, reduces the power consumption of backlight module.
Optionally, in one embodiment, continuing with referring to Fig. 6, the multiple LED chip 200 is in a manner of array arrangement
Die bond is on the circuit substrate 100, and the spacing between the adjacent LED chip 200 is less than 5mm；The circuit substrate
100 thickness is less than 0.5mm.
Specifically, the multiple LED chips 200 of die bond on circuit substrate 100 of the thickness less than 0.5mm, multiple LED chips
200 adjacent spacing is less than 5mm, and array arrangement is on circuit substrate 100.Optionally, the multiple LED chip 200 can be
It is arranged on circuit substrate 100, is also possible to circular array or anisotropic array arrangement in circuit substrate 100 with rectangular array
On.
In the present embodiment, multiple LED chips by adjacent spacing less than 5mm array arrangement in a manner of die bond in circuit substrate
On, the luminous density above multiple LED chips is much larger than the luminous density of two chips intervals, and cured first layer of silica gel can
To increase the recovery rate for issuing light from chip, the light for issuing chip more dissipates, and reduces the dark space between adjacent chips, increases backlight
The uniformity of luminance in source；In addition, reducing the thickness of backlight with a thickness of the circuit substrate less than 0.5mm.
In one embodiment, a kind of liquid crystal display, including display panel and any one above-mentioned embodiment are provided
The backlight.Specifically, a kind of liquid crystal display includes display panel and by circuit substrate, multiple LED chips, the first silicon
The backlight of glue-line and/or phosphor powder layer composition.In the present embodiment, which can uniformly shine, and be user
Good visual experience, and the thinner thickness of the display screen are provided, aesthetics is good.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it cannot be understood as the limitations to utility model patent range.It should be pointed out that for the common skill of this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The protection scope of the utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (10)
1. a kind of backlight, which is characterized in that the backlight include: circuit substrate, multiple LED chips, the first layer of silica gel and
Phosphor powder layer；For the multiple LED chip die bond on the circuit substrate, first layer of silica gel is coated in the circuit substrate
It goes up and wraps up the multiple LED chip；The surfacing of first layer of silica gel, and the surface of first layer of silica gel includes ditch
Groove pattern；The phosphor powder layer is coated in first layer of silica gel.
2. backlight according to claim 1, which is characterized in that the thickness of the phosphor powder layer is less than 0.15mm.
3. backlight according to claim 1 or 2, which is characterized in that the depth of the channel patterns is less than 50um.
4. backlight according to claim 2, which is characterized in that the backlight further includes being arranged in the phosphor powder layer
On the second layer of silica gel；Second layer of silica gel is to be mixed with the layer of silica gel of spread powder.
5. backlight according to claim 1 or 2, which is characterized in that the silica gel refractive index of first layer of silica gel is greater than
1.4, the thickness of first layer of silica gel is greater than 0.2mm.
6. backlight according to claim 1 or 2, which is characterized in that the length of the LED chip is less than 500um, described
The width of LED chip is less than 500um, and the height of the LED chip is less than 200um.
7. backlight according to claim 1 or 2, which is characterized in that the multiple LED chip is consolidated in a manner of array arrangement
Crystalline substance is on the circuit substrate.
8. backlight according to claim 1 or 2, which is characterized in that between the multiple LED chip adjacent chips
Away from less than 5mm.
9. backlight according to claim 1 or 2, which is characterized in that the thickness of the circuit substrate is less than 0.5mm.
10. a kind of liquid crystal display, which is characterized in that including display panel and back as claimed in any one of claims 1-9 wherein
Light source.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821634406.5U CN209515735U (en) | 2018-10-09 | 2018-10-09 | Backlight and liquid crystal display |
| DE112018007807.8T DE112018007807T5 (en) | 2018-08-09 | 2018-12-29 | BACKLIGHT AND LIQUID CRYSTAL DISPLAY |
| PCT/CN2018/125418 WO2020029534A1 (en) | 2018-08-09 | 2018-12-29 | Backlight source and liquid crystal display |
| US17/264,475 US11320695B2 (en) | 2018-08-09 | 2018-12-29 | Backlight and liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821634406.5U CN209515735U (en) | 2018-10-09 | 2018-10-09 | Backlight and liquid crystal display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209515735U true CN209515735U (en) | 2019-10-18 |
Family
ID=68191835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821634406.5U Active CN209515735U (en) | 2018-08-09 | 2018-10-09 | Backlight and liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209515735U (en) |
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2018
- 2018-10-09 CN CN201821634406.5U patent/CN209515735U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240310 Address after: 241000 No.11, Weier Road, East District, Wuhu Economic and Technological Development Zone, Anhui Province Patentee after: Anhui ruituo Electronics Co.,Ltd. Country or region after: China Address before: 157 Huaihe East Road, Dalian Economic Development Zone, Liaoning Province Patentee before: ELEC-TECH PHOTOELECTRIC TECHNOLOGY (DALIAN) Co.,Ltd. Country or region before: China |
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| TR01 | Transfer of patent right |