CN209497326U - High potential isolated power supply in a kind of semiconductor high pressure valve application circuit - Google Patents
High potential isolated power supply in a kind of semiconductor high pressure valve application circuit Download PDFInfo
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- CN209497326U CN209497326U CN201821961992.4U CN201821961992U CN209497326U CN 209497326 U CN209497326 U CN 209497326U CN 201821961992 U CN201821961992 U CN 201821961992U CN 209497326 U CN209497326 U CN 209497326U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000009413 insulation Methods 0.000 claims abstract description 18
- 238000002955 isolation Methods 0.000 claims abstract description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 claims description 3
- 238000011105 stabilization Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 238000005381 potential energy Methods 0.000 abstract description 3
- 238000004080 punching Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
The utility model belongs to multiple-energy-source and utilizes technical field, in particular to high potential isolated power supply in a kind of semiconductor high pressure valve application circuit.Taking energy mutual inductor, unit to take including high-voltage semi-conductor valve group, ac current source, high_voltage isolation mutual inductor, valve section can transmitter and unit control power supply；Major insulation is undertaken by the D.C mutual-inductor that a high_voltage isolation mutual inductor LH0 is matched with high-voltage semi-conductor valve group one end voltage-to-ground grade；Minor insulation takes energy mutual inductor to share by more deck valve sections；High-voltage semi-conductor valve group is made of multistage, and every section is equipped with a deck valve section and takes energy mutual inductor, and each current transformer insulation is matched with the minor insulation voltage class that this section is shared.The utility model than punching cable with take can mutual inductor coupling energy taking scheme applied voltage it is higher, provide bigger power than self-energizing circuit, realize semiconductor element series connection and apply the high potential energy collecting problem in high-tension circuit.
Description
Technical field
The utility model belongs to multiple-energy-source and utilizes technical field, in particular to height in a kind of semiconductor high pressure valve application circuit
Potential isolation power supply.
Background technique
Electric semiconductor high pressure valve is in series by multi-stage power semiconductor devices, and high pressure valve one end is in high electricity over the ground
Position, it is at different levels in valve to be in different potentials.Control circuit is connected with main device, and control power supply is dielectrically separated from ability and main device
Dielectric level is consistent.Voltage class is ± 160KV ± 320KV ± 500KV in direct current transportation, and above earth potential is so high,
And concatenated semiconductor switching module quantity crosses hundred in high pressure valve, and the high number of insulation voltage is provided in compact high pressure valve arrangement
So many power supply processed is measured as problem.
Common technology has:
1) to be directly depressured change from the DC terminal of this unit H bridge in the circuit that H bridge is switched as basic unit with fixed frequency
Exchanging for can power.SVG, high-voltage frequency converter can be in this way in flexible direct current transmission converter valve circuit.
2) control circuit on high potential connects current transformer, and a high-tension cable is worn from all mutual inductor centre bores
It crosses, passes through current transformer coupling energy taking.
Method 1, which is confined to H-bridge unit both ends always, the situation of electricity.Method 2 had both been confined to the major insulation water of high-tension cable
It is flat, and it is confined to electric field strength between mutual inductor and cable, the method can be used only in the voltage class within 35KV.
Summary of the invention
Place in view of the above-mentioned deficiencies in the prior art, the utility model proposes a kind of semiconductor high pressure valve applications
High potential isolated power supply in circuit, its purpose is to realize that the high potential energy collecting in high-tension circuit is applied in semiconductor element series connection
Problem.
The technical scheme adopted by the utility model to solve the technical problem is as follows:
High potential isolated power supply in a kind of semiconductor high pressure valve application circuit, including high-voltage semi-conductor valve group, alternating current
Source, high_voltage isolation mutual inductor, valve section take energy mutual inductor, unit to take energy transmitter and unit control power supply；Wherein, by a height
The D.C mutual-inductor that pressure isolation transformer LH0 is matched with high-voltage semi-conductor valve group one end voltage-to-ground grade undertakes major insulation；
Minor insulation takes energy mutual inductor to share by more deck valve sections；High-voltage semi-conductor valve group is made of multistage, and every section is equipped with a deck valve section
Energy mutual inductor is taken, each current transformer insulation is matched with the minor insulation voltage class that this section is shared.
The ac current source is in ground potential, and alternating current source output terminal connects high_voltage isolation mutual inductor LH0, high pressure
One high-tension cable JG0 of secondary connection of isolation transformer LH0；High-tension cable JG0 passes through all valve sections and takes energy mutual inductor；Valve section
The secondary of energy mutual inductor is taken to connect another high-tension cable, the high-tension cable JG1 of high-tension cable, high-tension cable JG2 ... high pressure
Cable JGn takes the iron core of energy transmitter to pass through from all units of this valve section, and unit takes the secondary of energy transmitter to control with unit
Power supply is connected.
Semiconductor valve in the semiconductor valve group is made of multistage, and every section of high-voltage semi-conductor valve is equipped with a deck valve section and takes energy
Mutual inductor, the power supply of this section of high-voltage semi-conductor valve take the secondary that energy mutual inductor can be taken from this deck valve section.
The ac current source is mid-frequency sinusoidal wave current source；Each unit of high-voltage semi-conductor valve is designed with a unit
Power supply is controlled, becomes direct current after alternating current is rectified, direct current obtains the direct current of voltage stabilization after current-voltage converts
Source.
It includes: that valve section takes energy mutual inductor LH1, valve section that energy mutual inductor LH2 ... valve section is taken to take that the valve section, which takes energy mutual inductor,
It can mutual inductor LHN.
It includes: that unit takes energy transmitter LH11, unit that energy transmitter LH12, unit is taken to take energy that the unit, which takes energy transmitter,
Transmitter LH21, unit take energy transmitter LH22, unit to take energy transmitter LHn1, unit that energy transmitter LHn2, unit is taken to take energy
Transmitter LH1m, unit take energy transmitter LH2m ... unit to take can transmitter LHnm.
The high-tension cable includes: high-tension cable JG1, high-tension cable JG2 ... high-tension cable JGn.
The unit control power supply includes: unit control power supply M11, unit control power supply M12, unit control power supply M21
Unit controls power supply M22, unit control power supply Mn1, unit control power supply Mn2 ... unit and controls power supply Mnm.
The utility model have the following advantages that and the utility model has the advantages that
In semiconductor element series connection application, each series unit be in different current potentials, the utility model provide one kind to
The scheme of the working power power supply of control unit on different potentials.Advantage is: than punching cable and taking energy mutual inductor coupling
The applied voltage of conjunction energy scheme is higher, and bigger power is provided than self-energizing circuit.Therefore, it can be realized semiconductor element
The high potential energy collecting problem in high-tension circuit is applied in part series connection.
Detailed description of the invention
Understand for the ease of those of ordinary skill in the art and implement the utility model, with reference to the accompanying drawing and is embodied
Mode is described in further detail the utility model, and the following examples illustrate the utility model, it is to be understood that this
The protection scope of utility model is not limited by the specific implementation.
Fig. 1 is the utility model structure diagram.
In figure: ac current source 1, high_voltage isolation mutual inductor LH02, valve section take energy mutual inductor 3, high-tension cable JG04, unit
Energy transmitter 5, high-tension cable 6 are taken, unit controls power supply 7.
Specific embodiment
The utility model is high potential isolated power supply in a kind of semiconductor high pressure valve application circuit, as shown in Figure 1, Fig. 1 is
The utility model structure diagram.By the coupling of high-voltage alternating mutual inductor serial take can in the way of a kind of new type multipath be provided be isolated
Power supply.
The utility model include: high-voltage semi-conductor valve group, ac current source, high_voltage isolation mutual inductor, valve section take can mutual inductance
Device, unit take can transmitter, unit control power supply.
It includes: that valve section takes energy mutual inductor LH1, valve section that energy mutual inductor LH2 ... valve section is taken to take energy that valve section, which takes energy mutual inductor 3,
Mutual inductor LHN.
Unit take can transmitter 5 include: unit take can transmitter LH11, unit take can transmitter LH12, unit takes to become
Send device LH21, unit take can transmitter LH22, unit take can transmitter LHn1, unit take can transmitter LHn2, unit takes to become
Sending device LH1m, unit that energy transmitter LH2m ... unit is taken to take can transmitter LHnm.
High-tension cable 6 includes: high-tension cable JG1, high-tension cable JG2 ... high-tension cable JGn.
Unit control power supply 7 includes: unit control power supply M11, unit control power supply M12, unit control power supply M21 unit
It controls power supply M22, unit control power supply Mn1, unit control power supply Mn2 ... unit and controls power supply Mnm.
Wherein, You Yitai high_voltage isolation mutual inductor LH02 is matched with high-voltage semi-conductor valve group one end voltage-to-ground grade
D.C mutual-inductor undertakes major insulation；Minor insulation takes energy mutual inductor 3 to share by more deck valve sections.High-voltage semi-conductor valve group is by multistage
It constitutes, every section is equipped with a deck valve section and takes energy mutual inductor 3, the minor insulation voltage etc. that each current transformer insulation is shared with this section
Grade matches.
Ac current source ACP is in ground potential, and alternating current source output terminal connects high_voltage isolation mutual inductor LH02, high pressure
One high-tension cable JG04 of secondary connection of isolation transformer LH02.High-tension cable JG04 passes through all valve sections and takes energy mutual inductor 3.
Valve section takes the secondary of energy mutual inductor 3 to connect another high-tension cable 6, high-tension cable JG1, the high-tension cable of high-tension cable 6
JG2 ... high-tension cable JGn takes the iron core of energy transmitter 5 to pass through from all units of this valve section, and unit takes time of energy transmitter 5
Grade is connected with unit control power supply 7.
Semiconductor valve is made of multistage, and every section of high-voltage semi-conductor valve is equipped with a deck valve section and takes energy mutual inductor, this section of high pressure half
The power supply of conductor valve takes the secondary that energy mutual inductor can be taken from this deck valve section.
Ac current source ACP is mid-frequency sinusoidal wave current source.Each unit of high-voltage semi-conductor valve is designed with a unit
Power supply is controlled, becomes direct current after alternating current is rectified, direct current obtains the direct current of voltage stabilization after current-voltage converts
Source.
Claims (8)
1. high potential isolated power supply in a kind of semiconductor high pressure valve application circuit, it is characterized in that: including high-voltage semi-conductor valve group, handing over
Stream current source, high_voltage isolation mutual inductor, valve section take energy mutual inductor, unit to take can transmitter and unit control power supply；Wherein, by
The D.C mutual-inductor that one high_voltage isolation mutual inductor LH0 is matched with high-voltage semi-conductor valve group one end voltage-to-ground grade undertakes master
Insulation；Minor insulation takes energy mutual inductor to share by more deck valve sections；High-voltage semi-conductor valve group is made of multistage, and every section is equipped with one
Valve section takes energy mutual inductor, and each current transformer insulation is matched with the minor insulation voltage class that this section is shared.
2. high potential isolated power supply in a kind of semiconductor high pressure valve application circuit according to claim 1, it is characterized in that: institute
It states ac current source and is in ground potential, alternating current source output terminal connects high_voltage isolation mutual inductor LH0, high_voltage isolation mutual inductor
One high-tension cable JG0 of secondary connection of LH0；High-tension cable JG0 passes through all valve sections and takes energy mutual inductor；Valve section takes can mutual inductor
Secondary connect another high-tension cable, high-tension cable JG1, high-tension cable JG2 ... the high-tension cable JGn of high-tension cable from this
All units of valve section take the iron core of energy transmitter to pass through, and unit takes the secondary of energy transmitter and unit control power supply to be connected.
3. high potential isolated power supply in a kind of semiconductor high pressure valve application circuit according to claim 1, it is characterized in that: institute
The semiconductor valve stated in semiconductor valve group is made of multistage, and every section of high-voltage semi-conductor valve is equipped with a deck valve section and takes energy mutual inductor, this
The power supply of section high-voltage semi-conductor valve takes the secondary that energy mutual inductor can be taken from this deck valve section.
4. high potential isolated power supply in a kind of semiconductor high pressure valve application circuit according to claim 1, it is characterized in that: institute
Stating ac current source is mid-frequency sinusoidal wave current source；Each unit of high-voltage semi-conductor valve is designed with a unit control power supply,
Become direct current after alternating current is rectified, direct current obtains the DC power supply of voltage stabilization after current-voltage converts.
5. high potential isolated power supply in a kind of semiconductor high pressure valve application circuit according to claim 1, it is characterized in that: institute
Stating valve section and taking energy mutual inductor includes: that valve section takes energy mutual inductor LH1, valve section that energy mutual inductor LH2 ... valve section is taken to take energy mutual inductor
LHN。
6. high potential isolated power supply in a kind of semiconductor high pressure valve application circuit according to claim 1, it is characterized in that: institute
Stating unit and taking energy transmitter includes: that unit takes energy transmitter LH11, unit that energy transmitter LH12, unit is taken to take energy transmitter
LH21, unit take energy transmitter LH22, unit to take energy transmitter LHn1, unit that energy transmitter LHn2, unit is taken to take can transmitter
LH1m, unit take energy transmitter LH2m ... unit to take can transmitter LHnm.
7. high potential isolated power supply in a kind of semiconductor high pressure valve application circuit according to claim 2, it is characterized in that: institute
Stating high-tension cable includes: high-tension cable JG1, high-tension cable JG2 ... high-tension cable JGn.
8. high potential isolated power supply in a kind of semiconductor high pressure valve application circuit according to claim 1, it is characterized in that: institute
Stating unit control power supply includes: unit control power supply M11, unit control power supply M12, unit control power supply M21 unit control electricity
Source M22, unit control power supply Mn1, unit control power supply Mn2 ... unit control power supply Mnm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821961992.4U CN209497326U (en) | 2018-11-27 | 2018-11-27 | High potential isolated power supply in a kind of semiconductor high pressure valve application circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821961992.4U CN209497326U (en) | 2018-11-27 | 2018-11-27 | High potential isolated power supply in a kind of semiconductor high pressure valve application circuit |
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| Publication Number | Publication Date |
|---|---|
| CN209497326U true CN209497326U (en) | 2019-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821961992.4U Active CN209497326U (en) | 2018-11-27 | 2018-11-27 | High potential isolated power supply in a kind of semiconductor high pressure valve application circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109378907A (en) * | 2018-11-27 | 2019-02-22 | 国网辽宁省电力有限公司经济技术研究院 | High potential isolated power supply in semiconductor high pressure valve application circuit |
-
2018
- 2018-11-27 CN CN201821961992.4U patent/CN209497326U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109378907A (en) * | 2018-11-27 | 2019-02-22 | 国网辽宁省电力有限公司经济技术研究院 | High potential isolated power supply in semiconductor high pressure valve application circuit |
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