CN209417340U - The double-deck optical waveguide supporter spot-size converter - Google Patents
The double-deck optical waveguide supporter spot-size converter Download PDFInfo
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- CN209417340U CN209417340U CN201821860165.6U CN201821860165U CN209417340U CN 209417340 U CN209417340 U CN 209417340U CN 201821860165 U CN201821860165 U CN 201821860165U CN 209417340 U CN209417340 U CN 209417340U
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- optical waveguide
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- size converter
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Abstract
The utility model discloses a kind of double-deck optical waveguide supporter spot-size converter, including substrate, insulator layer, the first optical waveguide, the second optical waveguide, third optical waveguide, the first supporter, the second supporters;The insulator layer is placed on the substrate, and first optical waveguide is placed on the insulator layer, and second optical waveguide is placed on the insulator layer and wraps up first optical waveguide, and the third optical waveguide is placed in second optical waveguide;First supporter side is that zigzag structure is placed on the insulator, second supporter is placed on first supporter, and cover the first supporter and form highly gradient supporter, the multilayer lightguide structure that first optical waveguide, the second optical waveguide, third optical waveguide are formed is placed between two highly gradient supporters.The utility model may be implemented single mode optical fiber and connect transmission with the end face of silicon based photon chip, improves coupling efficiency, is easy to implement large-scale integrated optical circuit.
Description
Technical field
The utility model relates to optic communication and light network technical field, specially a kind of double-deck optical waveguide supporter mould spot turns
Parallel operation.
Background technique
The technique of large scale integrated circuit is very mature at present, has arrived the rank of nanometer.Its mainstream technology CMOS
Integrated level doubled according to Moore's Law every about 18 months.The raising of integrated level keeps the function of chip stronger and stronger.But
It is, with the continuous diminution of device feature size, after the range of nanoscale, this one-dimensional hair of integrated circuit
Exhibition mode is faced with the challenge of a series of physical limitation, these challenges have the physics limit from basic physics law, also have
From the physical limit of material, technology, device and system aspects.And it is current, with " cloud computing, " Internet of Things ", " big number
According to " be representative novel information technology appearance so that the demand of data processing and transmission technology to high-speed, low-power consumption
More urgent, the explosive growth of message capacity promotes the development of photon technology, generally believes the silicon using silicon materials as substrate
Base photonic device and integrated technology have the outstanding advantages such as low-power consumption, high-speed, compact-sized, will become and solve information network institute
The key technology of the power consumption that faces, rate, volume etc. bottleneck.Firstly, light is excellent with its distinctive speed, bandwidth and low-power consumption
Gesture has occupy leading in network transmission, and starts applied to the rack room of short distance, chip chamber, even mutual in chip
Connection.
However for silicon substrate optical chip, how to allow optical signal is low-loss to be coupled with external devices, into
The transmission of row signal is still a urgent problem to be solved.The usual very little of the size of silicon substrate optical waveguide, size are about 1um, and general
The core diameter of logical single mode optical fiber is about 9-10um, and the two size differs greatly.It is easy to generate model field unbalance, to cause biggish
Coupling loss, it is therefore desirable to which the double-deck optical waveguide supporter spot-size converter for designing special construction is excessive to solve coupling loss
The problem of, to improve coupling efficiency.
Using the mode of end coupling, end coupling is the utility model bilayer optical waveguide supporter spot-size converter
A kind of coupling efficiency is high and is easy to the coupling technique of encapsulation.The mould field of optical waveguide and the mould field of single mode optical fiber be more when end coupling
Matching, light field can efficiently be coupled into external single mode optical fiber from silicon base chip, to realize the interconnection with external devices.
Here the material selection for making optical waveguide is SU-8 photoresist, and SU-8 photoresist is a kind of epoxy type, the negative light of black light
Photoresist, the SU- that commercialized SU-8 photoresist has the Microlithography Chemical company in the U.S. to produce at present
8 photoresists.SU-8 photoresist can make the structure of high-aspect-ratio, and that reports at present can accomplish that depth-width ratio is 15:1.
This photoresist absorptivity within the scope of near ultraviolet is low, this makes it have preferable exposure uniform on entire photoresist thickness
Property, the structure of available good vertical sidewall and high-aspect-ratio.The bilayer of high-aspect-ratio is prepared using SU-8 photoresist
Optical waveguide supporter spot-size converter is a kind of flexible and advantage of lower cost scheme.
General optical waveguide template transformer, in order to realize the high efficiency coupling of silicon substrate optical waveguide and external single mode optical fiber
It closes, general optical waveguide needs multiple-layer stacked alignment, to meet the output end face of silicon substrate optical waveguide with outside single mode optical fiber same
In horizontal plane.Even need to carry out 3 layers when in order to realize that high efficiency is coupled with the alignment between optical waveguide, this not only increases
The difficulty of production and time-consuming, laborious, and it is easy to appear alignment deviations when upper and lower level optical waveguide alignment, cause upper and lower level
It is not able to maintain alignment before optical waveguide, be easy to cause unnecessary loss.
Utility model content
1, purpose of utility model
The utility model proposes a kind of double-deck optical waveguide supporter spot-size converters, solve pair encountered when multilayer alignment
The problem of inaccurate problem, waste of resource.
2, the technical solution adopted in the utility model
The utility model discloses a kind of double-deck optical waveguide supporter spot-size converter, including substrate, insulator layer, first
Optical waveguide, the second optical waveguide, third optical waveguide, the first supporter, the second supporter;The insulator layer is placed in the substrate
On, first optical waveguide is placed on the insulator layer, and second optical waveguide is placed on the insulator layer and wraps up institute
The first optical waveguide is stated, the third optical waveguide is placed in second optical waveguide, and three optical waveguides form multilayer lightguide structure;
Second optical waveguide, the pyramidal structure of third optical waveguide are oppositely arranged;First optical waveguide and second optical waveguide
Pyramidal structure is oppositely arranged;First supporter side is that zigzag structure is placed on the insulator, described second
Support body is placed on first supporter, and is covered the first supporter and formed highly gradient supporter, first optical waveguide, the
The multilayer lightguide structure that two optical waveguides, third optical waveguide are formed is placed between two highly gradient supporters.
Further, further include top covering, be located in third optical waveguide.
Further, the substrate is silicon.
Further, first optical waveguide is silicon, and thickness is in 300nm or less.
Further, second optical waveguide is SU-8 photoresist, and thickness is between 2-4um, non-tapered side width
Between 11-13um.
Further, the third optical waveguide is SU-8 photoresist, and thickness is between 6-8um, non-tapered side width
Between 11-13um.
Further, first supporter be SU-8 photoresist, thickness between 2-4um, first supporter with
The opposite side of second optical waveguide, the third optical waveguide pyramidal structure is laciniation, and the area of supporter is more next
It is smaller.
Further, second supporter is SU-8 photoresist, and thickness is between 6-8um.
Further, the non-tapered side width of second optical waveguide, the third optical waveguide is equal.
3, technical effect caused by the utility model
(1) the utility model by superposition multilayer conical optical waveguide, allow silicon substrate Optical Waveguide Modes spot-size converter with
The external efficient coupling of single mode optical fiber.
(2) the utility model uses SU-8 photoresist as waveguide material, and uses supporting body structure, and first layer supports
Body uses one end for zigzag partial mulching to the grading structure being completely covered, after second layer waveguide carries out photoetching development herein
Place will form a highly gradient of waveguide, and the range of gradual change is lower layer, that is, first layer waveguide thickness.Such a height
Gradual change can guide optical signals eminence into lower, and the characteristic of high-aspect-ratio can be made using SU-8 photoresist, it is possible to reduce
The problem of multilayer alignment of waveguide, the misalignment encountered when thus greatly reducing multilayer alignment, and money is greatly saved
Source.
Detailed description of the invention:
Content expressed by Figure of description is described briefly below:
Fig. 1 is the schematic diagram of the utility model bilayer optical waveguide supporter spot-size converter.Clearly to show optical waveguide
Structure, omit supporter and top covering.
Fig. 2 is the optical waveguide supporter schematic diagram of the utility model bilayer optical waveguide supporter spot-size converter.
Fig. 3 is the utility model preparation method step 2 gained intermediate structure side schematic view.
Fig. 4 is the utility model preparation method step 2 gained intermediate structure schematic top plan view.
Fig. 5 is the utility model preparation method step 2 gained intermediate structure end view.
Fig. 6 is the utility model preparation method step 3 gained intermediate structure side schematic view.
Fig. 7 is the utility model preparation method step 3 gained intermediate structure schematic top plan view.
Fig. 8 is the utility model preparation method step 3 gained intermediate structure end view.
Fig. 9 is the utility model preparation method step 4 gained intermediate structure side schematic view.
Figure 10 is the utility model preparation method step 4 gained intermediate structure schematic top plan view.
Figure 11 is the utility model preparation method step 4 gained intermediate structure end view.
Figure 12 is the resulting supporter schematic diagram of the utility model preparation method step 4.
Figure 13 is the three-dimensional structure diagram of the utility model.
Wherein, 1- substrate, 2- insulator layer, the first optical waveguide of 3-, the second optical waveguide of 4-, 5- third optical waveguide, wrap on 6-
Layer, the first supporter of 7-, the second supporter of 8-.
Specific embodiment
Below between the shape of the utility model specific embodiment such as related each component, construction, each section
Interconnected relationship, each section effect and working principle, manufacture craft and operate with method etc., do further details of
Explanation.In order to which the design to the utility model, technical solution have more complete, accurate and deep understanding.
Embodiment 1
The utility model is embodied in structure for solving the problems, such as that silicon based photon chip is docked with general single mode fiber
On innovation, it is not substrate to be completely covered, but the area covered is gradually that production waveguide first, which is tapered the supporter at place,
It reduces, shows as area by close to thin grading structure, in an even upper layer photoresist, upper layer photoresist can fill the sky of lower layer
Place is lacked, has had the place of photoresist can again even upper one layer before, has generally formed the gradual change of a photoresist in height.
As shown in Figure 1, the utility model is a kind of double-deck optical waveguide supporter spot-size converter, including substrate 1, insulator
Layer 2, the first optical waveguide 3, the second optical waveguide 4, third optical waveguide 5, the first supporter 7, the second supporter 8.As shown in Fig. 2, should
The zigzag partial mulching of the first supporter 7 designed in utility model can make above it to the grading structure being completely covered
Second supporter 8 forms the trapezoidal highly gradient of a class.
In bilayer optical waveguide supporter spot-size converter described in the utility model, substrate 1 is silicon, and deposition is exhausted on substrate 1
Edge body layer 2.The production of insulator layer 2 has the first optical waveguide 3, and material is silicon, includes one section of reversed conical optical waveguide, is wrapped in second
In optical waveguide 4;Second optical waveguide 4 is placed on insulator layer 2, and material is SU-8 photoresist, includes one section of straight wave guide 4a, one section of cone
Shape optical waveguide 4b, one section of straight wave guide 4c;Third optical waveguide 5 is placed in the second optical waveguide 4, and material is SU-8 photoresist, includes one
Section straight wave guide 5a, one section of tapered transmission line 5b;First supporter 7 is placed on insulator layer 2, contour with the second optical waveguide;Second
Support body 8 is placed on the first supporter 7, includes the unchanged supporter 8a of one section of height, one section of highly gradient supporter 8b, height is gradually
The range of change is the height of the first supporter.First supporter 7 is located at 4 two sides of the second optical waveguide, contour with the second optical waveguide;The
Two supporters 8 are located at 5 two sides of third optical waveguide, contour with third optical waveguide.
Embodiment 2
The present embodiment provides a kind of preparation methods of above-mentioned double-deck optical waveguide supporter spot-size converter, and specific steps are such as
Under:
(1) insulator layer is deposited on substrate.
(2) the first optical waveguide is made using electron beam lithography on insulator layer, after the completion of the step, structure is such as
Shown in Fig. 3,4,5.
(3) the second optical waveguide is made using uv-exposure technology on the chip made from step (2), and generates and is distributed in the
First supporter 7 of two optical waveguide two sides, after the completion of the step, structure is as shown in Fig. 6,7,8.
(4) third optical waveguide is made on the chip made from step (3) using using uv-exposure technology, and generate distribution
Second supporter 8a, 8b in third optical waveguide two sides, after the completion of the step, structure is as shown in Fig. 9,10,11.
(5) silica is deposited on the chip made from step (4) using plasma reinforced chemical meteorology deposition, be used as upper
Covering, after the completion of the step, structure is as shown in figure 12.
In the structure of the utility model, light is incident from right side.Second optical waveguide 4, the non-tapered structure of third optical waveguide 5
It is superimposed, mould field matches with the mould field in single mode optical fiber, can will be optically coupled into the second optical waveguide in single mode optical fiber
4, in third optical waveguide 5.Since the width of third optical waveguide 5 is gradually reduced, the light field in third optical waveguide 5 gradually subtracts
It is few, until mould spot has been concentrated mainly in the second optical waveguide 4 at the left side tip of third optical waveguide 5.Later, second optical waveguide 4
Width is gradually reduced, so that the size of mould spot is gradually reduced, until at the right tip of the tapered part of the second optical waveguide 4, the first light
The mould field of 3 left side tip of waveguide can match with the mould spot at 4 right tip of the second optical waveguide, while the width of the first optical waveguide 3
Degree is gradually increased, and due to coupling, light field is gradually transferred in the first optical waveguide 3;The final final effect for generating the utility model,
Realize light field from single mode optical fiber to the coupling of silicon waveguide.
Common spot-size converter is since multiple working procedure can directly act on multilayer waveguide to multilayer waveguide during the preparation process
Between, cause calibration inaccuracy, the utility model proposes the first supporter 7 and the second supporter 8 special construction design, match
The structure for closing multilayer waveguide, can form the highly gradient of supporter and optical waveguide on the whole.And it is played after completing
Protection supporting role to multilayer lightguide, while each processing step is alleviated in process to the opposite position of waveguiding structure
The impact set, so that structure is more stable.
Above-described embodiment is the preferable embodiment of the utility model, but the embodiments of the present invention is not by above-mentioned
The limitation of embodiment, if any other structure meet in our structures the case where density changes and it is other it is any without departing from
Made changes, modifications, substitutions, combinations, simplifications, should be equivalent displacement side under the spiritual essence and principle of the utility model
Formula is included within the protection scope of the utility model.
Claims (9)
1. a kind of bilayer optical waveguide supporter spot-size converter, it is characterised in that: including substrate (1), insulator layer (2), first
Optical waveguide (3), the second optical waveguide (4), third optical waveguide (5), the first supporter (7), the second supporter (8);The insulator
Layer (2) is placed on the substrate (1);First optical waveguide (3) is placed on the insulator layer (2), second optical waveguide
(4) it is placed on the insulator layer (2) and wraps up first optical waveguide (3), the third optical waveguide (5) is placed in described second
In optical waveguide (4), three optical waveguides form multilayer lightguide structure;Second optical waveguide (4), third optical waveguide (5) cone
Shape structure is oppositely arranged;The pyramidal structure of first optical waveguide (3) and second optical waveguide (4) is oppositely arranged;Described
One supporter (7) side is that zigzag structure is placed on the insulator layer (2), and second supporter (8) is placed in described
On first supporter (7), and covers the first supporter (7) and form highly gradient supporter;First optical waveguide (3), second
The multilayer lightguide structure that optical waveguide (4), third optical waveguide (5) are formed is placed between two highly gradient supporters.
2. bilayer optical waveguide supporter spot-size converter according to claim 1, it is characterised in that: further include top covering
(6), it is located on third optical waveguide (5).
3. bilayer optical waveguide supporter spot-size converter according to claim 1, it is characterised in that: the substrate (1) is
Silicon.
4. bilayer optical waveguide supporter spot-size converter according to claim 1, which is characterized in that first optical waveguide
It (3) is silicon, thickness is in 300nm or less.
5. bilayer optical waveguide supporter spot-size converter according to claim 1, which is characterized in that second optical waveguide
It (4) is SU-8 photoresist, thickness is between 2-4um, and non-tapered side width is between 11-13um.
6. bilayer optical waveguide supporter spot-size converter according to claim 1, which is characterized in that the third optical waveguide
It (5) is SU-8 photoresist, thickness is between 6-8um, and non-tapered side width is between 11-13um.
7. bilayer optical waveguide supporter spot-size converter according to claim 1, which is characterized in that first supporter
It (7) is SU-8 photoresist, thickness is between 2-4um, first supporter (7) and second optical waveguide (4), the third
The opposite side of optical waveguide (5) pyramidal structure is laciniation, and the area of supporter is smaller and smaller.
8. bilayer optical waveguide supporter spot-size converter according to claim 1, which is characterized in that second supporter
It (8) is SU-8 photoresist, thickness is between 6-8um.
9. bilayer optical waveguide supporter spot-size converter according to claim 1 to 8, which is characterized in that described
The non-tapered side width of second optical waveguide (4), the third optical waveguide (5) is equal.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109283619A (en) * | 2018-11-13 | 2019-01-29 | 苏州易缆微光电技术有限公司 | The spot-size converter and preparation method thereof led based on ELECTRODE WITH BILAYER POLYMERIC object wave |
CN111244756A (en) * | 2020-03-12 | 2020-06-05 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
CN111458793A (en) * | 2020-04-17 | 2020-07-28 | 中国科学院半导体研究所 | L NOI-based ridge type optical waveguide end face coupling structure and application thereof |
US20200393619A1 (en) * | 2020-08-27 | 2020-12-17 | Intel Corporation | Multi-layer silicon photonics apparatus |
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2018
- 2018-11-13 CN CN201821860165.6U patent/CN209417340U/en active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109283619A (en) * | 2018-11-13 | 2019-01-29 | 苏州易缆微光电技术有限公司 | The spot-size converter and preparation method thereof led based on ELECTRODE WITH BILAYER POLYMERIC object wave |
CN109283619B (en) * | 2018-11-13 | 2024-02-06 | 苏州易缆微光电技术有限公司 | Mode spot-size converter based on double-layer polymer waveguide and preparation method thereof |
CN111244756A (en) * | 2020-03-12 | 2020-06-05 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
CN111458793A (en) * | 2020-04-17 | 2020-07-28 | 中国科学院半导体研究所 | L NOI-based ridge type optical waveguide end face coupling structure and application thereof |
US20200393619A1 (en) * | 2020-08-27 | 2020-12-17 | Intel Corporation | Multi-layer silicon photonics apparatus |
US12019270B2 (en) * | 2020-08-27 | 2024-06-25 | Intel Corporation | Multi-layer silicon photonics apparatus |
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