CN209402435U - A kind of pulse power supply circuit in electrostatic high-pressure dedusting - Google Patents
A kind of pulse power supply circuit in electrostatic high-pressure dedusting Download PDFInfo
- Publication number
- CN209402435U CN209402435U CN201920431058.XU CN201920431058U CN209402435U CN 209402435 U CN209402435 U CN 209402435U CN 201920431058 U CN201920431058 U CN 201920431058U CN 209402435 U CN209402435 U CN 209402435U
- Authority
- CN
- China
- Prior art keywords
- resistance
- connect
- circuit
- diode
- transformer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Electronic Switches (AREA)
Abstract
The utility model discloses the pulse power supply circuits in a kind of electrostatic high-pressure dedusting, including DC high-voltage source control platform, step-up transformer, storage capacitor, high-voltage semi-conductor switching circuit, switch driving circuit, diode array and resonant inductance, the DC high-voltage source control platform is connect with step-up transformer, the step-up transformer is connect with storage capacitor, the storage capacitor, diode array, resonant inductance and switch driver are connect with high-voltage semi-conductor switching circuit, the diode array is connected in reverse parallel in the both ends of high-voltage semi-conductor switching circuit, the resonant inductance provides high-voltage pulse for connecting with dedusting ontology for dedusting ontology.The utility model circuit is simple, and the high voltage pulse waveform of generation is complete and amplitude, frequency, pulsewidth are adjustable, and pulsewidth width is narrow, and frequency is high, can be widely used in electrostatic precipitation field.
Description
Technical field
The utility model belongs to High-Voltage Electrical Appliances power technique fields, and in particular to the pulse electricity in a kind of electrostatic high-pressure dedusting
Source circuit.
Background technique
China is industrial power, and atmosphere pollution is serious.Atmospheric particulates in industrial waste gas severely exceed, and industrial waste gas is net
Change significant to environmental improvement.Atmospheric particulates refer to solid-state and liquid particles shape substance in atmosphere, and component is complicated,
It can even be detrimental to health.Currently, being all the dust pelletizing system of high direct voltage power supply mostly, charge capacity is poor, is easy to happen anti-
Corona discharge phenomenon, efficiency of dust collection is low and energy consumption is high.
Compared to high direct voltage, the action time of high-voltage pulse is short, breakdown potential field strength, and peak value of pulse is much higher than DC voltage,
On the one hand a large amount of energetic plasma, which can be generated, helps dust to realize higher diffusional charging, on the other hand generates higher electricity
Voltage crest value helps dust to realize higher electric-field charge, to improve charge capacity, and has the effect of coalescence particulate matter.Pulse is also
It can effectively inhibit high resistant than back corona phenomenon caused by dust, reduce reentrainment of dust, reduce system energy consumption, improve efficiency of dust collection.
It is badly in need of a kind of efficient high-voltage pulse power source at present to solve the problems, such as industrial dedusting.
Summary of the invention
Technical problem to be solved in the utility model is to provide a kind of electrostatic high-pressure in view of the above shortcomings of the prior art
Pulse power supply circuit in dedusting, the pulse power supply circuit circuit in the dedusting of this electrostatic high-pressure is simple, the high-voltage pulse wave of generation
Shape is complete and amplitude, frequency, pulsewidth are adjustable, and pulsewidth width is narrow, and frequency is high, can be widely used in electrostatic precipitation field.
To realize the above-mentioned technical purpose, the technical solution that the utility model is taken are as follows:
A kind of pulse power supply circuit in electrostatic high-pressure dedusting, including DC high-voltage source control platform, step-up transformer, storage
Energy capacitor, high-voltage semi-conductor switching circuit, switch driving circuit, diode array and resonant inductance, the DC high-voltage source control
Platform processed is connect with step-up transformer, and the step-up transformer is connect with storage capacitor, the storage capacitor, diode array,
Resonant inductance and switch driver are connect with high-voltage semi-conductor switching circuit, and the diode array is connected in reverse parallel in high pressure half
The both ends of conductor switching circuit, the resonant inductance provide high-voltage pulse for connecting with dedusting ontology for dedusting ontology.
As the further improved technical solution of the utility model, the DC high-voltage source control platform includes two-way controllable
Silicon regulating circuit, zero cross detection circuit and main control chip, the zero cross detection circuit are connected with main control chip, the main control chip
With bidirectional thyristor for regulating voltage circuit connection, the bidirectional thyristor for regulating voltage circuit is connect with step-up transformer.
As the further improved technical solution of the utility model, the zero cross detection circuit include step-down transformer T1,
Resistance R1 to resistance R3, triode Q1, optocoupler U1 and optocoupler U2, the optocoupler U1 and optocoupler U2 are all made of optocoupler TLP521, institute
The armature winding upper end for stating step-down transformer T1 is connect with the firewire of alternating current 220V, and armature winding lower end is connect with zero curve, institute
State the secondary windings upper end of step-down transformer T1 by resistance R3 simultaneously with the light emitting diode anode and optocoupler U2 in optocoupler U1
Interior light emitting diode cathode connection, the secondary windings lower end of the step-down transformer T1 simultaneously with the light-emitting diodes in optocoupler U1
Pipe cathode is connected with the light emitting diode anode in optocoupler U2, the collector and optocoupler U2 of the phototriode in the optocoupler U1
The collector of interior phototriode is connect with the base stage of triode Q1, and the base stage of the triode Q1 is connected by resistance R1
There is power supply, the collector of the triode Q1 is connected with power supply, the hair of the phototriode in the optocoupler U1 by resistance R2
Emitter-base bandgap grading, the emitter of phototriode in optocoupler U2 and the emitter of triode Q1 are all connected with ground wire, the triode Q1
Collector and main control chip common I/O port connect.
As the further improved technical solution of the utility model, the bidirectional thyristor for regulating voltage circuit includes zero-based light
To resistance R7, capacitor C2 and bidirectional triode thyristor Q2, the zero-based optocoupler U3 uses optocoupler MOC3061, described by coupling U3, resistance R4
The pin 1 of zero-based optocoupler U3 is connected with power supply by resistance R4, and the pin 2 of the zero-based optocoupler U3 is general with main control chip
Logical I/O port connection, the pin 4 of the zero-based optocoupler U3 is connect with the gate pole G of resistance R7 and bidirectional triode thyristor Q2 simultaneously, described
The pin 6 of zero-based optocoupler U3 is connect with the main electrode T1 of bidirectional triode thyristor Q2, firewire and resistance R6 simultaneously by resistance R5, institute
The other end for stating resistance R6 is connect with capacitor C2, the other end of the resistance R7, the main electrode T2 of bidirectional triode thyristor Q2 and capacitor
The other end of C2 is connect with armature winding one end of step-up transformer, and the armature winding other end of zero curve and step-up transformer connects
It connects.
As the further improved technical solution of the utility model, the main control chip uses STM32F103C8T6.
As the further improved technical solution of the utility model, the step-up transformer is using YDJ-5KVA/100KV oil
Step-up transformer in immersion HT testing transformer, the diode array is by multiple mutually series-parallel diode D5 groups
At.
As the further improved technical solution of the utility model, the switch driving circuit includes switch driver, indigo plant
The serial ports of tooth module and main control chip, the bluetooth module and main control chip and the connection of common I/O port, the main control chip
Common I/O port is connect with switch driver, and the switch driver is connect with high-voltage semi-conductor switching circuit.
As the further improved technical solution of the utility model, the bluetooth module uses DX-BT05 bluetooth module, institute
Main control chip is stated using STM32F103C8T6.
As the further improved technical solution of the utility model, the switch driver includes driver M57962, two
Pole pipe D1, diode D2, resistance R9 and IGBT, the IGBT use G60N160UFD, the pin 1 of the driver M57962 with
The anode connection of diode D2, the cathode of diode D2 are opened with the pole D of IGBT, the anode of diode D1 and high-voltage semi-conductor simultaneously
Close circuit connection, the 4 connection+15V power supply of pin of the driver M57962, the 6 connection -9V of pin of the driver M57962
Power supply, the pin 5 of the driver M57962 are connect with the pole G of IGBT, and the pin 13 of the driver M57962 connects ground wire,
The pin 14 of the driver M57962 is connect with the common I/O port of main control chip, the pole the S connection ground wire of the IGBT, and described two
The cathode of pole pipe D1 is connect with high-voltage semi-conductor switching circuit and+48V power supply simultaneously by resistance R9.
As the further improved technical solution of the utility model, the high-voltage semi-conductor switching circuit includes transformer T2
And multiple secondary-side switch circuits, the transformer T2 include 1 primary side winding and multiple vice-side windings, the vice-side winding
Quantity is identical with the quantity of secondary-side switch circuit and each vice-side winding is respectively connected with a secondary-side switch circuit, the transformer
The primary side winding upper end of T2 is connect with the resistance R9 and+48V power supply in switch driver simultaneously, the primary side of the transformer T2
Winding lower end is connect with the pole D of the IGBT in switch driver；
The secondary-side switch circuit includes diode D4, resistance R10, bidirectional triode thyristor Q4, resistance R12 and RCD buffer subsystem
Network, the RCD buffer network include resistance R11, diode D3 and capacitor C4, the resistance R11 and diode D3 in parallel and electric
One end of resistance R11 is connect with one end of capacitor C4 simultaneously with the cathode of diode D3, the cathode and resistance R10 of the diode D4
One end connection, the other end of the resistance R10 connect with the gate pole G of bidirectional triode thyristor Q4, the master of the bidirectional triode thyristor Q4
The anode interconnection of electrode T1, one end of resistance R12, the other end of resistance R11 and diode D3, the diode D4 is just
The other end interconnection of pole, the main electrode T2 of bidirectional triode thyristor Q4, the other end of resistance R12 and capacitor C4；It opens on multiple pair sides
Bidirectional triode thyristor Q4 in powered-down road is sequentially connected in series；
A vice-side winding upper end of transformer T2 connect with the diode D4 cathode in a secondary-side switch circuit and should
Vice-side winding lower end is connect with the diode D4 anode in the secondary-side switch circuit；
Positioned at the one end transformer T2 vice-side winding connect secondary-side switch circuit in silicon-controlled Q4 main electrode T1 with
Storage capacitor connects, the bidirectional triode thyristor Q4's in the secondary-side switch circuit of the vice-side winding connection of the transformer T2 other end
Main electrode T2 is connect with resonant inductance.
The utility model has the following beneficial effects: this generates high-voltage pulse by resonance with novel, DC high-voltage source can be passed through
Control platform adjusts the voltage magnitude of pulse, and can adjust the width of pulse by changing the resonant inductance size of resonance circuit
Degree, moreover it is possible to the frequency of pulse is adjusted by the switch driver in switch driving circuit, most pulse electric energy passes through two
Pole pipe array is recovered to storage capacitor, only remains a small amount of electric energy and rests in dedusting ontology and by the equivalent resistance of dedusting ontology slowly
Consumption, forms lesser hangover.In conclusion the high voltage pulse waveform that generates of the utility model is complete and amplitude, frequency, pulsewidth
It is adjustable；And circuit is simple, pulsewidth width is narrow, and frequency is high, can be widely used in electrostatic precipitation field.
Detailed description of the invention
Fig. 1 is the pulse power supply circuit topological diagram of the present embodiment.
Fig. 2 is the pulse power waveform diagram of the present embodiment.
Fig. 3 is 3 equivalent circuit of mode in the present embodiment.
Fig. 4 is 4 equivalent circuit of mode in the present embodiment.
Fig. 5 is the circuit theory schematic diagram of the present embodiment bidirectional thyristor for regulating voltage circuit.
Fig. 6 is the circuit theory schematic diagram of the present embodiment zero cross detection circuit.
Fig. 7 is the circuit theory schematic diagram of the present embodiment high-voltage semi-conductor switching circuit.
Fig. 8 is the circuit theory schematic diagram of the present embodiment switch driver.
Fig. 9 is the circuit theory schematic diagram of the present embodiment bluetooth module.
Figure 10 is the circuit theory schematic diagram of the present embodiment diode array.
Specific embodiment
Obtaining high-voltage pulse, generally there are two types of modes: first is that being directly obtained using high-voltage semi-conductor switch, second is that using low
It compresses switch and is obtained after being boosted again with pulse transformer.Currently, the electrostatic precipitation pulse power in domestic market is mostly pulse transformer side
Formula, but there is the disadvantages of taking up a large area, volume is big, weight is heavy, price is high and pulsewidth is wide in this mode, be unable to satisfy present city
Field demand.The especially transformation of electrostatic precipitation project, often industry spot does not allow dedusting power source volume too big, and requires pulsewidth
Very narrow, pulse transformer mode is unable to reach.The present embodiment proposes a kind of high-voltage pulse based on high-voltage semi-conductor switch designs
Power circuit, the pulse power supply circuit generate high-voltage pulse using LC resonance principle, and the waveform of high-voltage pulse is complete and amplitude, frequency
Rate, pulsewidth are adjustable；Circuit is simple, pulse width, and frequency is high, can be widely used in electrostatic precipitation field；With pulse transformer
Mode is compared to small in size.
Specific embodiment of the present utility model is further illustrated below according to Fig. 1 to Figure 10:
Referring to Fig. 1, a kind of pulse power supply circuit in electrostatic high-pressure dedusting, including DC high-voltage source control platform, boosting
Transformer, storage capacitor C1, high-voltage semi-conductor switching circuit, switch driving circuit, diode array and resonant inductance L1, it is described
DC high-voltage source control platform is connect with step-up transformer, and the step-up transformer is connect with storage capacitor C1, the energy storage electricity
Hold C1, diode array, resonant inductance L1 and switch driver to connect with high-voltage semi-conductor switching circuit, the diode battle array
Column are connected in reverse parallel in the both ends of high-voltage semi-conductor switching circuit, the resonant inductance L1 for connect with dedusting ontology be except
Dirt ontology provides high-voltage pulse.Wherein dedusting ontology has capacitance-resistance effect, can be equivalent to the parallel connection of capacitor C ' and resistance R '.
Itself output voltage is adjusted in the DC high-voltage source control platform of the present embodiment, by the fixation times of step-up transformer
Negative direct current high voltage V1 is formed after several litres of pressures, to charge to storage capacitor C1.DC high-voltage source control platform and step-up transformer
Between can connect primary voltage instrument, the voltage of measurement DC high-voltage source control platform output.
The step-up transformer of the present embodiment is become using the boosting in YDJ-5KVA/100KV oil-immersed and high-voltage testing transformer
Depressor (http://www.shbianyaqi.com/Products-14989944.html), built-in rectifier can be by direct current height
After the boost in voltage of potential source control platform output and it is rectified into negative direct current high voltage V1.
Impulse waveform obtained by the pulse power supply circuit of the present embodiment is as shown in Fig. 2, V1 is the both ends storage capacitor C1
Output voltage, V2 are the pulse voltage that dedusting ontology both ends generate, and can divide 5 mode.
1) mode 1(QUOTE Before moment): the cut-off of high-voltage semi-conductor switching circuit, storage capacitor C1, which is in, to be filled
Electricity condition, V1 voltage constantly rise the output voltage until reaching DC high-voltage source control platform, and V2 voltage is 0 at this time, this mould
After state 1 generally only appears in equipment start-up operation.
2) mode 2(QUOTE — QUOTE ): the cut-off of high-voltage semi-conductor switching circuit, V1 voltage are equal to straight
The output voltage of high-voltage power supply control platform is flowed, and V2 voltage is 0.
3) mode 3(QUOTE — QUOTE ): equivalent circuit is as shown in figure 3, in QUOTE Moment,
The driving signal that high-voltage semi-conductor switching circuit receives switch driving circuit is open-minded, and electric current forward stream crosses high pressure semiconductor switch
Circuit.Storage capacitor C1 and resonant inductance L1 generates resonance, and storage capacitor C1 is in discharge condition, the decline of V1 voltage；Capacitor C '
Resonance is also generated with resonant inductance L1, capacitor C ' is in charged state, and V2 voltage rises.Harmonic period QUOTE 。
4) mode 4(QUOTE — QUOTE ): equivalent circuit is as shown in Figure 4.In QUOTE When
It carves, i.e. the QUOTE of resonance Moment, V2 voltage reach crest voltage, and V1 voltage drops to the lowest point.High-voltage semi-conductor is opened
The current over-zero closing property that powered-down road passes through its interior bidirectional triode thyristor after switch is closed.High-voltage semi-conductor switching circuit uses
Electronic device have the minimal reaction time, if the reaction time be greater than QUOTE , switch close moment is that it is minimum anti-
It is on the contrary then be QUOTE between seasonable Moment.Capacitor C ' electric discharge, electric current flow to storage capacitor C1 through diode array,
Most of electric energy is recycled, this pulse power energy consumption is substantially reduced.At some time point, generally by DC high-voltage source control platform
Performance determines that DC high-voltage source control platform can start to charge to storage capacitor C1, while again due to the effect of recycling electric energy, meeting
Make storage capacitor C1 in QUOTE Moment nearby generates a hump voltage.
5) mode 5(QUOTE — QUOTE ): in QUOTE Moment, diode array cut-off, electricity
Hold the residual electricity in C ' by resistance R ' slow release, this time is a hangover of pulse falling edge.To next pulse
Before generation, residual electricity will all discharge as far as possible, otherwise will affect the waveform quality of pulse, or even improve electric field breakdown probability.?
Pulse frequency is adjusted in use according to the actual situation, in order to avoid cause to remain electric cumulative effect.
The DC high-voltage source control platform of the present embodiment based on single-phase IGCT phase control principle design, including it is two-way can
Control silicon regulating circuit, zero cross detection circuit and main control chip；Zero cross detection circuit is connected with main control chip, and zero cross detection circuit is used
In sending Zero_INT signal to main control chip, main control chip passes through the zero point of Zero_INT signal detection alternating current 220V, thus
Judge whether the bidirectional triode thyristor Q2 of bidirectional thyristor for regulating voltage circuit closes；Main control chip and bidirectional thyristor for regulating voltage circuit connect
It connects, main control chip is opened for controlling zero-based optocoupler MOC3061 driving bidirectional triode thyristor Q2；Bidirectional thyristor for regulating voltage circuit with
Step-up transformer connection.
Bidirectional thyristor for regulating voltage circuit in DC high-voltage source control platform is as shown in figure 5, include zero-based optocoupler U3, electricity
Hinder R4 to resistance R7, capacitor C2 and bidirectional triode thyristor Q2；Zero-based optocoupler U3 uses optocoupler MOC3061, zero-based optocoupler U3's
Pin 1 is connected with 3.3V power supply by resistance R4, and the pin 2 of zero-based optocoupler U3 and the common output I/O port of main control chip connect
It connects；The pin 4 of zero-based optocoupler U3 is connect with the gate pole G of resistance R7 and bidirectional triode thyristor Q2 simultaneously；Zero-based optocoupler U3's draws
Foot 6 is connect with the main electrode T1 of bidirectional triode thyristor Q2, the firewire of alternating current 220V and resistance R6 simultaneously by resistance R5；Resistance R6
The other end connect with capacitor C2, the other end of the other end of resistance R7, the main electrode T2 of bidirectional triode thyristor Q2 and capacitor C2 is equal
It is connect with armature winding one end of step-up transformer, the zero curve of alternating current 220V and the armature winding other end of step-up transformer connect
It connects.
In Fig. 5, L is firewire, and N is zero curve, the step-up transformer in interface J2 map interlinking 1, its working principle is that when it is two-way can
When controlling silicon Q2 conducting, interface J2 is to step-up transformer output voltage, and when bidirectional triode thyristor Q2 shutdown, interface J2 leads to without output
It crosses bidirectional triode thyristor Q2 and chops alternating current 220V off to adjust the alternating voltage of interface J2 output.MOC3061 is zero-based optocoupler, is used to
Bidirectional triode thyristor Q2 conducting is driven, and plays the role of Phototube Coupling, it is highly-safe.The common output I/O port of main control chip exports
Voltage_OUT signal gives the MOC3061 LED of primary by current-limiting resistance R4, to control the circuit of next stage, low level
Effectively.The driving current 15mA of MOC3061 optocoupler primary LED, forward voltage is in 1.3V or so, therefore resistance R4 is selected as 130 Ω.
The model BT134 of bidirectional triode thyristor Q2, pressure resistance reach 600V, and energy trouble free service is in alternating current 220V.4 He of pin of MOC3061
When pin 6 is connected, R5 is the gate electrode resistance of bidirectional triode thyristor Q2, and gate resistance is very high, and anti-interference ability can be improved.R7 is triggering
The current-limiting resistance of bidirectional triode thyristor is selected as 360 Ω.R6 is 39 Ω, and C2 0.01uF, R6 and C2 form surge absorbing circuit, can
To prevent surge voltage from damaging bidirectional triode thyristor Q2.
The characteristics of bidirectional triode thyristor, will not be turned off at once after cancelling trigger current, but in current over-zero Shi Caiguan
It is disconnected, generally there is delay slightly, i.e., the very short time internal trigger shutdown after zero point.According to this feature, software is recycled
(main control chip) adjusts the angle of flow of bidirectional triode thyristor Q2 to can be achieved with pressure regulation.The angle of flow is the electricity of bidirectional triode thyristor Q2 turn-on time
Angle, and bidirectional triode thyristor Q2 is automatically shut down in zero passage, therefore it is only necessary to know that when bidirectional triode thyristor should be opened.Direct current
Main control chip in high-voltage power supply control platform detects the zero point of alternating current 220V to judge two-way controllable by zero cross detection circuit
Whether silicon Q2 turns off, and when bidirectional triode thyristor Q2 is off, main control chip is controlled two-way controllable by zero-based optocoupler MOC3061
The turn-on time of silicon Q2 is to adjust the voltage exported to step-up transformer.Zero cross detection circuit such as Fig. 6 institute in the present embodiment
Show, including step-down transformer T1, resistance R1 are to resistance R3, triode Q1, optocoupler U1 and optocoupler U2, the optocoupler U1 and optocoupler U2
Be all made of optocoupler TLP521, the armature winding upper end of the step-down transformer T1 is connect with the firewire of alternating current 220V, it is primary around
Group lower end connect with the zero curve of alternating current 220V, the secondary windings upper end of the step-down transformer T1 pass through resistance R3 and meanwhile with light
Light emitting diode anode in coupling U1 is connected with the light emitting diode cathode in optocoupler U2, the step-down transformer T1 it is secondary around
Group lower end is connect with the light emitting diode anode in the light emitting diode cathode and optocoupler U2 in optocoupler U1 simultaneously, the optocoupler U1
The collector of interior phototriode and the collector of the phototriode in optocoupler U2 are connect with the base stage of triode Q1, institute
The base stage for stating triode Q1 is connected with 3.3V power supply by resistance R1, and the collector of the triode Q1 is connected with by resistance R2
3.3V power supply, the emitter and three of the emitter of the phototriode in the optocoupler U1, phototriode in optocoupler U2
The emitter of pole pipe Q1 is all connected with ground wire, and the collector of the triode Q1 and the common input I/O port of main control chip connect.It connects
The purpose of mouth J1 is the firewire and zero curve for meeting alternating current 220V.Zero cross detection circuit in the present embodiment utilizes two TLP521 light
Coupling (U1 and U2) detects transformer T1 low-pressure side, and resistance R3 is current-limiting resistance.When alternating current 220V is not zero, always there is an optocoupler
TLP521 is in the conductive state, the base earth of triode Q1, Q1 shutdown, and Zero_INT signal is pulled up resistance R2 and draws to high electricity
It is flat；When alternating current 220V is in zero point, all in off state, Q1 base stage is pulled up resistance R1 and draws to high level two optocouplers,
Q1 conducting, Zero_INT signal ground are low level.Therefore, the common input I/O port of main control chip receives Zero_INT signal
As long as detecting that the failing edge of Zero_INT signal is meant that afterwards is the zero point of alternating current 220V, this method has certain delay, works as master
When control chip detects zero point, bidirectional triode thyristor Q1 may be had been switched off, therefore maximum output voltage can be slightly below 220V.When
Main control chip, which detects, then judges that bidirectional triode thyristor Q2 is closed when the failing edge of Zero_INT signal, can select as needed at certain
A moment drives bidirectional triode thyristor Q2 to open by MOC3061, and then adjusts its voltage swing exported to step-up transformer.
The main control chip that the DC high-voltage source control platform of the present embodiment uses uses STM32F103C8T6.
The high-voltage semi-conductor switching circuit of the present embodiment is as shown in fig. 7, comprises transformer T2 and multiple secondary-side switch electricity
Road, the transformer T2 include 1 primary side winding and multiple vice-side windings, the quantity and secondary-side switch circuit of the vice-side winding
Quantity it is identical and each vice-side winding is respectively connected with a secondary-side switch circuit, the primary side winding of transformer T2 is connected with interface
J4, interface J4 are used to connect with the interface J3 of switch driver in switch driving circuit in Fig. 8, i.e. the primary side winding of transformer T2
Upper end is connect with the resistance R9 and+48V power supply in switch driver simultaneously, the primary side winding lower end of the transformer T2 with open
Close driver in IGBT(Q3) the pole D connection.
As shown in fig. 7, the secondary-side switch circuit in the high-voltage semi-conductor switching circuit of the present embodiment includes diode D4, electricity
Hinder R10, bidirectional triode thyristor Q4, resistance R12 and RCD buffer network.RCD buffer network includes resistance R11, diode D3 and capacitor
The cathode of one end and diode D3 of C4, resistance R11 and diode D3 parallel connection and resistance R11 connects with one end of capacitor C4 simultaneously
It connects.The cathode of diode D4 is connect with the one end resistance R10, and the resistance R10 other end is connect with the gate pole G of bidirectional triode thyristor Q4, double
It is connected with each other to the anode of the main electrode T1 of silicon-controlled Q4, one end of resistance R12, the other end of resistance R11 and diode D3, two
The other end interconnection of the anode of pole pipe D4, the main electrode T2 of bidirectional triode thyristor Q4, the other end of resistance R12 and capacitor C4；
Bidirectional triode thyristor Q4 in multiple secondary-side switch circuits is sequentially connected in series to realize the concatenation of multiple secondary-side switch circuits.
The connection of the vice-side winding and secondary-side switch circuit of transformer T2 in the present embodiment high-voltage semi-conductor switching circuit
Mode are as follows: in a vice-side winding upper end of the transformer T2 in high-voltage semi-conductor switching circuit and a secondary-side switch circuit
Diode D4 cathode connects and the vice-side winding lower end is connect with the diode D4 anode in the secondary-side switch circuit.Positioned at transformation
The end H in main electrode T1(, that is, Fig. 7 of silicon-controlled Q4 in the secondary-side switch circuit of the vice-side winding connection of the one end device T2) and storage
Can capacitor C1 connection, the bidirectional triode thyristor Q4 in the secondary-side switch circuit of the vice-side winding connection of the transformer T2 other end
The end L in main electrode T2(, that is, Fig. 7) it is connect with resonant inductance L1.
The principle of the high-voltage semi-conductor switching circuit of the present embodiment is connected using multiple bidirectional triode thyristor Q4, the H in Fig. 7
End is high voltage input terminal, and the end L is high-voltage output end.The model BTA80-1200 of bidirectional triode thyristor Q4, maximum working voltage are
1200V bears the principle that voltage is no more than maximum working voltage 60% by switching tube, 20 BTA80-1200 is connected, Ji Keshi
Existing high-voltage switch gear 1200V*60%*20=14.4KV operating voltage.Therefore the quantity and secondary-side switch of the vice-side winding of the present embodiment
The quantity of circuit is 20.
Maximum leakage current when bidirectional triode thyristor Q4 forward blocking is 500uA, and the effect of resistance R12 is that direct current is pressed, stream
The electric current for crossing R12 should be greater than the leakage current of bidirectional triode thyristor Q4, and no more than the Leakage Current allowed in circuit.This circuit design
Allow to reveal the electric current of several mA, the maximum working voltage of each bidirectional triode thyristor Q4 is 720V, therefore R12 takes 300K Ω.
Resistance R11, diode D3 and capacitor C4 constitute RCD buffer network, and effect is that transient state is pressed.It is two-way when certain level-one
When silicon-controlled Q4 lag conducting or shutdown in advance (20 do not have fully synchronized driving, and there are a very short time differences), voltage is logical
It crosses diode D3 to charge to capacitor C4, it is ensured that bidirectional triode thyristor Q4 will not excessive pressure damages within this time difference.When this is two-way controllable
Capacitor C4 discharges electric energy by bidirectional triode thyristor Q4 and resistance R11 after silicon Q4 conducting, guarantees have again when next time asynchronous
The standby ability for absorbing electric energy.R11 is high voltage non-inductance resistor, and pressure resistance is 2KV/100 Ω, and D3 is fast recovery diode, and pressure resistance is
2KV。 QUOTE It is to take 10A, QUOTE there are the electric current in circuit when the time difference It is the time difference, takes
100ns, QUOTE It is the pressure voltage 1200V of MOSFET, so C4 takes 2nF herein.
QUOTE 。
The driving of bidirectional triode thyristor Q4 is by the way of Magnetic isolation coupling, it is ensured that the driving of multiple bidirectional triode thyristor Q4
Signal is consistent, and T2 is a transformer (magnet ring), and the switch driver of switch driving circuit connects transformer T2 primary side (left side),
The bidirectional triode thyristor connection transformer T2 pair side Q4 (right side), when primary side generates a pulse, the electric current and primary side of secondary side induction
It unanimously also generating a pulse, bidirectional triode thyristor Q4 conducting will be driven primary, i.e. high-voltage semi-conductor switching circuit conducting is primary,
It chops the high direct voltage in impulse circuit topology off, forms pulse, and bidirectional triode thyristor Q4 is automatically shut down in current over-zero.It is two-way
Silicon-controlled Q4 control step voltage is in 12V or so, and because the driving current of controlled stage is less than 50mA, current-limiting resistance R10 takes 500 Ω, D4
It is clamp diode, prevents bidirectional triode thyristor Q4 from damaging because of control electrode overtension.
The switch driving circuit of the present embodiment includes switch driver, bluetooth module and main control chip, wherein bluetooth module
It is connect with the serial ports of main control chip and common I/O port, the common output I/O port of main control chip is connect with switch driver, switch
Driver is connect with high-voltage semi-conductor switching circuit.
The circuit of the switch driver of the present embodiment is as shown in figure 8, including driver M57962(U5), diode D1, two
Pole pipe D2, resistance R9 and IGBT(Q3)；The pin 1 of driver M57962 is connect with the anode of diode D2, and diode D2's is negative
Pole is connect with the pole D of IGBT, the anode of diode D1 and high-voltage semi-conductor switching circuit simultaneously；The pin 4 of driver M57962
Connection+15V power supply, 6 connection -9V power supply of pin；The pin 5 of driver M57962 is connect with the pole G of IGBT, driver M57962
Pin 13 connect ground wire, the pin 14 of driver M57962 connect with the common output I/O port of main control chip, the pole the S company of IGBT
The cathode of ground line, diode D1 is connect with high-voltage semi-conductor switching circuit and+48V power supply simultaneously by resistance R9.
Switch driver utilizes IGBT(Q3) pulse signal of 48V is generated to the transformer in high-voltage semi-conductor switching circuit
T2 primary side provides pulse voltage, to drive high-voltage semi-conductor switching circuit to be connected.IGBT(Q3 model G60N160UFD), when
When grid G is high level, IGBT conducting, 1 pin of interface J3 is connected to ground, at this time the transformer in high-voltage semi-conductor switching circuit
T2 primary side is powered, driving high-voltage switch gear (i.e. bidirectional triode thyristor Q4) conducting；When grid G is low level, IGBT shutdown, interface J3
Without output, high-voltage switch gear (i.e. bidirectional triode thyristor Q4) is closed, and is become by sustained diode 1 and resistance R9 release inductive load T2(
Depressor T2) primary side electric energy.Therefore, as long as IGBT conducting, closing once, can drive high-voltage switch gear to generate a pulse.
M57962 is IGBT special purpose driver, and using+15V and -9V dual power supply, it is+15V that 5 pins, which export high level, exports low electricity
It puts down as -10V, can reliably control the turn-on and turn-off of IGBT.Its 1 pin DEL can detecte IGBT overload, when generation over-voltage or mistake
When stream, when IGBT drain voltage is risen to greater than 15, isolating diode D2 cut-off, DEL foot voltage is 15V, 5 pins of M57962
OUT immediately output low level can turn off IGBT.13,14 pins of M57962 meet internal optocoupler, the common output IO of main control chip
Mouth connects 14 feet of M57962, exports IGBT_IN signal, when the IGBT_IN signal of output is high level, drives M57962's
OUT pin exports high level driving IGBT conducting, and the IGBT_IN signal of output is that low level then drives IGBT to turn off.
The circuit of the bluetooth module of the present embodiment switch driving circuit is as shown in figure 9, using DX-BT05 bluetooth module
(U4), CC2541 chip is used in the bluetooth module.The POWER pin of MDX-BT05 bluetooth module connects 3.3V power supply, and leads to
Cross capacitor C3 connection ground wire.MDX-BT05 bluetooth module is connect (RX pin and TX pin) with main control chip by UART, is carried out
Data transmission；STATE pin connects the common I/O port of main control chip with EN pin；STATE pin indicates bluetooth state, bluetooth mould
Block by STATE pin to main control chip export bluetooth state, high level indicate bluetooth connection success, low level indicate bluetooth without
Connection；EN pin is that bluetooth enables pin, and when high level allows bluetooth connection, and when low level forbids bluetooth connection.Bluetooth module
It is mainly used to the output of control switch driver, the i.e. bluetooth of user's usable terminal device (such as mobile phone) and switch driving circuit
Module connection sends signal, the main control chip signal that bluetooth module is sent based on the received to main control chip by bluetooth module
Come regulating switch driver whether output drive signal, and the frequency of configuration driven signal, to adjust high-voltage semi-conductor switch electricity
The turn-on frequency on road controls the frequency of high-voltage pulse.The main control chip of the switch driving circuit of the present embodiment uses
STM32F103C8T6。
The circuit of the present embodiment diode array is as shown in Figure 10, is made of multiple mutually series-parallel diode D5.By
Negative high voltage is exported in step-up transformer, therefore when storage capacitor C1 electric discharge, diode D5 cut-off, when capacitor C ' electric discharge, two
Pole pipe D5 conducting.
In conclusion the present embodiment generates high-voltage pulse by resonance, can be adjusted by DC high-voltage source control platform
The voltage of pulse, and the width of pulse can be adjusted by changing the resonant inductance L1 size of resonance circuit, moreover it is possible to pass through switch
Driver adjusts the frequency of pulse, and most pulse electric energy is recovered to storage capacitor C1 by diode array, only surplus few
Amount electric energy rests in dedusting ontology and by the equivalent resistance slow consumption of dedusting ontology, forms lesser hangover.This is practical new
The circuit of type is simple, and the pulse of generation is narrow, and frequency is high, can be widely used in electrostatic precipitation field.
The protection scope of the utility model includes but is not limited to embodiment of above, and the protection scope of the utility model is to weigh
Subject to sharp claim, replacement, deformation, the improvement that those skilled in the art that any pair of this technology is made is readily apparent that are each fallen within
The protection scope of the utility model.
Claims (10)
1. the pulse power supply circuit in a kind of electrostatic high-pressure dedusting, which is characterized in that including DC high-voltage source control platform, boosting
Transformer, storage capacitor, high-voltage semi-conductor switching circuit, switch driving circuit, diode array and resonant inductance, the direct current
High-voltage power supply control platform is connect with step-up transformer, and the step-up transformer is connect with storage capacitor, the storage capacitor, two poles
Pipe array, resonant inductance and switch driver are connect with high-voltage semi-conductor switching circuit, the diode array reverse parallel connection
At the both ends of high-voltage semi-conductor switching circuit, the resonant inductance provides height for connecting with dedusting ontology for dedusting ontology
Press pulse.
2. the pulse power supply circuit in electrostatic high-pressure dedusting according to claim 1, which is characterized in that the high direct voltage
Source control platform includes bidirectional thyristor for regulating voltage circuit, zero cross detection circuit and main control chip, the zero cross detection circuit and master
Control chip connection, the main control chip and bidirectional thyristor for regulating voltage circuit connection, the bidirectional thyristor for regulating voltage circuit and boosting
Transformer connection.
3. the pulse power supply circuit in electrostatic high-pressure dedusting according to claim 2, which is characterized in that the zero passage detection
Circuit includes step-down transformer T1, resistance R1 to resistance R3, triode Q1, optocoupler U1 and optocoupler U2, the optocoupler U1 and optocoupler
U2 is all made of optocoupler TLP521, and the armature winding upper end of the step-down transformer T1 is connect with the firewire of alternating current 220V, primary
Winding lower end is connect with zero curve, the secondary windings upper end of the step-down transformer T1 by resistance R3 simultaneously with the hair in optocoupler U1
Optical diode anode is connected with the light emitting diode cathode in optocoupler U2, and the secondary windings lower end of the step-down transformer T1 is simultaneously
It is connect with the light emitting diode anode in the light emitting diode cathode and optocoupler U2 in optocoupler U1, photosensitive three in the optocoupler U1
The collector of pole pipe and the collector of the phototriode in optocoupler U2 are connect with the base stage of triode Q1, the triode Q1
Base stage power supply is connected with by resistance R1, the collector of the triode Q1 is connected with power supply, the optocoupler by resistance R2
The emitter of phototriode in U1, the emitter of phototriode in optocoupler U2 and the emitter of triode Q1 connect
Ground line, the collector of the triode Q1 and the common I/O port of main control chip connect.
4. the pulse power supply circuit in electrostatic high-pressure dedusting according to claim 3, which is characterized in that described two-way controllable
Silicon regulating circuit includes zero-based optocoupler U3, resistance R4 to resistance R7, capacitor C2 and bidirectional triode thyristor Q2, the zero-based optocoupler
U3 uses optocoupler MOC3061, and the pin 1 of the zero-based optocoupler U3 is connected with power supply, the zero-based optocoupler by resistance R4
The pin 2 of U3 is connect with the common I/O port of main control chip, the pin 4 of the zero-based optocoupler U3 simultaneously with resistance R7 and it is two-way can
The gate pole G connection of silicon Q2 is controlled, the pin 6 of the zero-based optocoupler U3 passes through resistance R5 while the main electrode with bidirectional triode thyristor Q2
T1, firewire are connected with resistance R6, and the other end of the resistance R6 is connect with capacitor C2, the other end of the resistance R7, it is two-way can
The other end for controlling the main electrode T2 and capacitor C2 of silicon Q2 is connect with armature winding one end of step-up transformer, and zero curve and boosting become
The armature winding other end of depressor connects.
5. the pulse power supply circuit in electrostatic high-pressure dedusting according to claim 4, which is characterized in that the main control chip
Using STM32F103C8T6.
6. the pulse power supply circuit in electrostatic high-pressure dedusting according to claim 1, which is characterized in that the boosting transformation
Device is using the step-up transformer in YDJ-5KVA/100KV oil-immersed and high-voltage testing transformer, and the diode array is by multiple phases
Mutually series-parallel diode D5 composition.
7. the pulse power supply circuit in electrostatic high-pressure dedusting according to claim 1, which is characterized in that the switch driving
Circuit includes switch driver, bluetooth module and main control chip, the serial ports and common IO of the bluetooth module and main control chip
Mouth connection, the common I/O port of the main control chip are connect with switch driver, and the switch driver and high-voltage semi-conductor switch
Circuit connection.
8. the pulse power supply circuit in electrostatic high-pressure dedusting according to claim 7, which is characterized in that the bluetooth module
Using DX-BT05 bluetooth module, the main control chip uses STM32F103C8T6.
9. the pulse power supply circuit in electrostatic high-pressure dedusting according to claim 8, which is characterized in that the switch driving
Device includes driver M57962, diode D1, diode D2, resistance R9 and IGBT, and the IGBT uses G60N160UFD, described
The anode of the pin 1 of driver M57962 and diode D2 connects, the cathode of diode D2 and meanwhile with the pole D of IGBT, diode
The anode of D1 is connected with high-voltage semi-conductor switching circuit, the 4 connection+15V power supply of pin of the driver M57962, the driving
6 connection -9V the power supply of pin of device M57962, the pin 5 of the driver M57962 are connect with the pole G of IGBT, the driver
The pin 13 of M57962 connects ground wire, and the pin 14 of the driver M57962 is connect with the common I/O port of main control chip, described
The pole S of IGBT connects ground wire, the cathode of the diode D1 by resistance R9 simultaneously with high-voltage semi-conductor switching circuit and+48V
Power supply connection.
10. the pulse power supply circuit in electrostatic high-pressure dedusting according to claim 9, which is characterized in that the high pressure half
Conductor switching circuit includes transformer T2 and multiple secondary-side switch circuits, and the transformer T2 includes 1 primary side winding and more
A vice-side winding, the quantity of the vice-side winding is identical with the quantity of secondary-side switch circuit and each vice-side winding is respectively connected with one
A secondary-side switch circuit, the primary side winding upper end of the transformer T2 are electric with the resistance R9 and+48V in switch driver simultaneously
Source connection, the primary side winding lower end of the transformer T2 is connect with the pole D of the IGBT in switch driver；
The secondary-side switch circuit includes diode D4, resistance R10, bidirectional triode thyristor Q4, resistance R12 and RCD buffer network, institute
Stating RCD buffer network includes resistance R11, diode D3 and capacitor C4, the resistance R11 and diode D3 parallel connection and resistance R11
One end connect simultaneously with one end of capacitor C4 with the cathode of diode D3, the one of the cathode of the diode D4 and resistance R10
End connection, the other end of the resistance R10 are connect with the gate pole G of bidirectional triode thyristor Q4, the main electrode of the bidirectional triode thyristor Q4
The anode interconnection of T1, one end of resistance R12, the other end of resistance R11 and diode D3, the anode of the diode D4,
The other end of the main electrode T2 of bidirectional triode thyristor Q4, the other end of resistance R12 and capacitor C4 are connected with each other；Multiple secondary-side switch electricity
Bidirectional triode thyristor Q4 in road is sequentially connected in series；
A vice-side winding upper end of transformer T2 is connect with the diode D4 cathode in a secondary-side switch circuit and the pair side
Winding lower end is connect with the diode D4 anode in the secondary-side switch circuit；
The main electrode T1 of silicon-controlled Q4 in the secondary-side switch circuit that the vice-side winding of the one end transformer T2 connects and energy storage
Capacitance connection, the main electricity of the bidirectional triode thyristor Q4 in the secondary-side switch circuit of the vice-side winding connection of the transformer T2 other end
Pole T2 is connect with resonant inductance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920431058.XU CN209402435U (en) | 2019-04-01 | 2019-04-01 | A kind of pulse power supply circuit in electrostatic high-pressure dedusting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920431058.XU CN209402435U (en) | 2019-04-01 | 2019-04-01 | A kind of pulse power supply circuit in electrostatic high-pressure dedusting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209402435U true CN209402435U (en) | 2019-09-17 |
Family
ID=67900184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920431058.XU Expired - Fee Related CN209402435U (en) | 2019-04-01 | 2019-04-01 | A kind of pulse power supply circuit in electrostatic high-pressure dedusting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209402435U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112255471A (en) * | 2020-06-05 | 2021-01-22 | 浙江华云信息科技有限公司 | Equipment fault uploading technology under application of reactive current pulse signals |
| CN115566923A (en) * | 2022-10-17 | 2023-01-03 | 无锡研平电子科技有限公司 | Voltage-adjustable high-voltage power supply of electrostatic eliminator |
-
2019
- 2019-04-01 CN CN201920431058.XU patent/CN209402435U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112255471A (en) * | 2020-06-05 | 2021-01-22 | 浙江华云信息科技有限公司 | Equipment fault uploading technology under application of reactive current pulse signals |
| CN115566923A (en) * | 2022-10-17 | 2023-01-03 | 无锡研平电子科技有限公司 | Voltage-adjustable high-voltage power supply of electrostatic eliminator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103248338B (en) | A kind of circuits for triggering of reverse switch transistor | |
| CN102723886B (en) | High power factor switch power supply and controller and control method thereof | |
| CN201854482U (en) | LED power circuit | |
| CN102026448A (en) | LED power circuit | |
| CN105247773B (en) | A kind of full-controlled bridge fairing with Surge suppression | |
| CN209402435U (en) | A kind of pulse power supply circuit in electrostatic high-pressure dedusting | |
| CN106059306A (en) | Multi-unit diode capacitor network high-gain full-bridge isolated direct current converter | |
| CN206923111U (en) | A kind of single live wire total power touch switch circuit | |
| CN205847124U (en) | A kind of switched inductors type mixes quasi-Z-source inverter | |
| CN101646280A (en) | LED high-voltage energy-saving power supply | |
| CN201750342U (en) | High-voltage inversion and low-voltage chopping type welding power supply | |
| CN106452152A (en) | Switch boost type high-gain quasi-Z-source inverter | |
| CN1109654A (en) | Combined control inverse method of pulse width modulation and zero current zero voltage harmonic switch | |
| CN206117540U (en) | Switch accurate Z source dc -to -ac converter of type high -gain that steps up | |
| CN205123587U (en) | Switching power supply of super wide region input | |
| CN201830511U (en) | High-frequency electronic transformer for low-voltage high-power light emitting diode (LED) spot lamp | |
| CN101527503A (en) | High-power factor correcting circuit | |
| CN204696953U (en) | A kind of Z-source inverter being applicable to photovoltaic generation | |
| CN208754063U (en) | A kind of harmonic energy recycling circuit | |
| CN204559415U (en) | High-frequency and high-voltage power supply subpackage rectifying device | |
| CN208782734U (en) | AC/DC power circuit | |
| CN206865428U (en) | Interval electrical equipment power off in standby state of electric energy saver | |
| CN201919204U (en) | LED (light-emitting diode) drive circuit | |
| CN205509881U (en) | Net DC power supply is joined in marriage to dual just sharp soft switch of formula | |
| CN205693959U (en) | The constant current boost circuit of a kind of DC DC and flash lamp circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Nanjing Monte tech Environmental Protection Technology Co., Ltd. Assignor: Nanjing Forestry University Contract record no.: X2019320000110 Denomination of utility model: A kind of pulse power supply circuit in electrostatic high-pressure dedusting Granted publication date: 20190917 License type: Common License Record date: 20191015 |
|
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Nanjing Fogg Electric Co., Ltd. Assignor: Nanjing Forestry University Contract record no.: X2019320000143 Denomination of utility model: A kind of pulse power supply circuit in electrostatic high-pressure dedusting Granted publication date: 20190917 License type: Common License Record date: 20191022 Assignee: Anhui Arrow Electronics Co., Ltd. Assignor: Nanjing Forestry University Contract record no.: X2019320000145 Denomination of utility model: A kind of pulse power supply circuit in electrostatic high-pressure dedusting Granted publication date: 20190917 License type: Common License Record date: 20191022 |
|
| EE01 | Entry into force of recordation of patent licensing contract | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190917 Termination date: 20200401 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |