CN209387131U - Photosensing Units and light sensing apparatus - Google Patents
Photosensing Units and light sensing apparatus Download PDFInfo
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- CN209387131U CN209387131U CN201790001057.0U CN201790001057U CN209387131U CN 209387131 U CN209387131 U CN 209387131U CN 201790001057 U CN201790001057 U CN 201790001057U CN 209387131 U CN209387131 U CN 209387131U
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- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 abstract description 42
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- 229910052751 metal Inorganic materials 0.000 description 10
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 4
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
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- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910001195 gallium oxide Inorganic materials 0.000 description 4
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 230000010412 perfusion Effects 0.000 description 4
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- 238000005496 tempering Methods 0.000 description 2
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
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- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0271—Housings; Attachments or accessories for photometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
- G01J2003/2816—Semiconductor laminate layer
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
The utility model relates to a kind of light sensing apparatus, the light sensing apparatus for sensing wearing state in a capacitive manner is provided.A technical problem to be solved in the utility model is, not to utilize the optical mode of infrared ray, but is sensed in wrist in a capacitive manner, can easily sense wearing state even if thorn has in the wrist tatooed.In one embodiment, light sensing apparatus includes: substrate, including transmission region and light area；Illumination region separates configuration with the substrate on the transmission region；First electrode is located on the light area；Diode layer is located in the first electrode；Second electrode is located on the diode layer；And driving portion, it is electrically connected at least one of the first electrode and second electrode, for sensing capacitor of at least one in the first electrode and second electrode that change as subject is located at the substrate lower part between subject.
Description
Technical field
The utility model relates to a kind of Photosensing Units and light sensing apparatus, provide and sense wearing state in a capacitive manner
Photosensing Units and light sensing apparatus.
Background technique
Whether existing light sensing apparatus wears light sensing apparatus and uses infrared ray to sense in wrist.
In in such a way that infrared ray senses wearing state, in wrist thorn have the colour switching for the wrists such as tatoo at
In the case where not being the colour of skin, the problem of generation can not sense wearing.
It although wearing light sensing apparatus in wrist, can not still be identified, in this case, may also be occurred
Can not be using application programs such as the mobile clearing services carried out by light sensing apparatus the problem of.
It is necessary to sense the wearing in wrist in a capacitive manner, and not to utilize the optical mode of infrared ray.
In addition, it is necessary to by avoiding using the infrared light-emitting diode in order to sense wearing based on optical mode, with
Miniaturise light sensing apparatus.
Further, it can be reflected from the light that illumination region exports in skin surface and be absorbed into acceptance part, or in glass
Substrate scattering-in is simultaneously absorbed into acceptance part.Therefore, it is necessary to configure can adjust illumination region FOV (field of view,
The visual field) shielded layer so that from illumination region irradiate light only in inside of human body vasoreflex and be absorbed into acceptance part.
Rather it is necessary to the spacing of shielded layer be adjusted, so that optimal light quantity reaches acceptance part, to promote pulse
The perfusion index (PI, Perfusion Index) of sensor.
Utility model content
Technical problem
The technical problem that the utility model will solve is, not to utilize the optical mode of infrared ray, and
It is in a capacitive manner, to sense the wearing in wrist, also can easily senses wearing shape in the wrist tatooed to have in thorn
State.
Another technical problem to be solved in the utility model is, needs by avoiding using in order to be based on optical mode
The infrared light-emitting diode of wearing is sensed, so that light sensing apparatus further realizes miniaturization.
Another technical problem to be solved in the utility model is that the light exported from illumination region can be anti-in skin surface
It penetrates and is absorbed into acceptance part absorption, or in substrate scattering-in and be absorbed into acceptance part, configuration can adjust the FOV of illumination region
The shielded layer in (field of view, the visual field), make from illumination region irradiate light only inside of human body vasoreflex and be absorbed by
Light portion.
Another technical problem to be solved in the utility model is, adjusts the spacing of shielded layer, so that optimal light quantity
Acceptance part is reached, to promote the perfusion index (PI, Perfusion Index) of pulse transducer.
Technical solution
In one embodiment, Photosensing Units includes: substrate, including transmission region and around the transmission region by
Light region；Shielded layer, including the opening being located on the transmission region；First electrode is located on the light area；Diode
Layer is located in the first electrode；And second electrode, it is located on the diode layer, the first electrode surrounds the screen
Layer is covered, and is separated with the shielded layer and is located at identical plane.
In one embodiment, light sensing apparatus includes lower basal plate；Substrate, including transmission region and light area；Screen
Layer is covered, including the opening being located on the transmission region；Illumination region separates with the shielded layer on the transmission region and matches
It sets, and is configured at lower basal plate；First electrode is located on the light area；Diode layer is located in the first electrode；
Second electrode is located on the diode layer, and, the shielded layer of the first electrode on the substrate, and
It is separated with the shielded layer and is located at identical plane.
In one embodiment, the diode layer includes: P layers, configures portion on the first electrode；Silicon layer, configuration exist
The top P layers of；It N layers, configures on the silicon layer top.
In one embodiment, the first electrode includes: optical signal transmissive portions, is contacted with the diode layer；Protruding portion,
Periphery relative to the diode layer is more prominent.
In one embodiment, the first electrode includes: optical signal transmissive portions, is contacted with the diode layer；Inside is expanded
The portion of opening, the inner circumferential exposure relative to the diode layer.
In one embodiment, the first electrode is configured towards the lower basal plate.
In one embodiment, at least one of the first electrode, second electrode and shielded layer with for sensing electricity
The driving portion of appearance is electrically connected.
In one embodiment, one in the first electrode, second electrode and shielded layer with the hair of the driving portion
Portion is sent to connect, one in residue two connect with the receiving unit of the driving portion.
In one embodiment, the shielded layer is connect with the transmission unit.
In one embodiment, the area of the shielded layer is greater than the area of the diode layer.
In one embodiment, including the virtual level configured in a manner of around the light area.
In one embodiment, the virtual level is configured at plane identical with the shielded layer.
In one embodiment, the shielded layer by zinc aluminum gallium oxide (GAZO), mixed with zinc oxide (GZO), the indium oxide of gallium
The formation of one of tin (ITO).
In one embodiment, the peripheral radius of the shielded layer is 500um~1500um.
In one embodiment, the peripheral radius of the opening is 50um~500um.
In one embodiment, the first electrode with a thickness of 350nm~450nm.
In one embodiment, the peripheral radius of the diode layer is 1000um~2000um.
In one embodiment, the second electrode with a thickness of 350nm~450nm.
Utility model effect
The utility model is not the optical mode to utilize infrared ray, but in a capacitive manner, it senses in wrist
It wears, to there is the wrist tatooed also can easily sense wearing state in thorn.
The utility model by avoiding using the infrared light-emitting diode in order to sense wearing based on optical mode, with
Light sensing apparatus is set to further realize miniaturization.
Detailed description of the invention
Fig. 1 is the cross-sectional view for showing the structure for the light sensing apparatus that an embodiment is related to.
Fig. 2 is the cross-sectional view for showing the structure for the diode layer that an embodiment is related to.
Fig. 3 is the perspective view for showing the first electrode that an embodiment is related to.
Fig. 4 is the perspective view for showing the first electrode that another embodiment is related to.
Fig. 5 is the perspective view for showing the second electrode that an embodiment is related to.
Fig. 6 is the perspective view for showing first electrode, diode layer and second electrode that an embodiment is related to.
Fig. 7 is the cross-sectional view for showing the structure for the light sensing apparatus that another embodiment is related to.
Fig. 8 is the cross-sectional view for showing the structure for the Photosensing Units that an embodiment is related to.
Fig. 9 is the cross-sectional view for showing the structure for the diode layer that an embodiment is related to.
Figure 10 is the cross-sectional view for showing the structure for the Photosensing Units that another embodiment is related to.
Appended drawing reference
100: substrate 110: light area
120: transmission region 200: first electrode
210: optical signal transmissive portions 220: protruding portion
230: interior expansion portion 300: diode layer
310:P layer 320: silicon layer
330:N layer 400: second electrode
410: interconnecting piece 500: illumination region
600: lower basal plate 700: central axis
800: shielded layer 900: driving portion
1000: virtual level
Specific embodiment
Above-mentioned and additional embodiment embodies the embodiment being illustrated by referring to accompanying drawing.Ying Li
Solution, as long as no specifically mentioned or not mutual contradiction, the constituent element of each embodiment is able to carry out more in embodiment
Kind combination.In turn, the utility model can be realized with many different forms, be not limited in embodiment described herein as.
In order to clearly state the utility model proposed in attached drawing, the part unrelated with explanation will be omitted, by entirely illustrating
Book assigns similar appended drawing reference to similar part.Also, when claiming a certain constituent element of certain a part of " comprising ", unless
There is especially opposite record, be otherwise not excluded for another constituent element, and refers to and may further include another constituent element.
In addition, throughout the specification, when referring to certain a part with other parts " connection ", this not only includes " directly
The case where connection ", include the case where therebetween across other elements " electrical connection ".Further, throughout the specification,
Signal refers to the electricity of voltage or electric current etc..
Refer to described in specification, " can change or be inserted into the system of hardware or software and constitute block ", that is, refer to
The unit or block of specific function are executed in hardware or software.
Fig. 1 is the cross-sectional view for showing the structure for the light sensing apparatus that an embodiment is related to.Fig. 7 is to show another embodiment to relate to
And light sensing apparatus structure cross-sectional view.
In one embodiment, light sensing apparatus includes: substrate 100, including transmission region 120 and light area；Illumination region
500, configuration is separated with the substrate 100 on the transmission region 120；First electrode 200 is located at the light area 110
On；Diode layer 300 is located in the first electrode 200；Second electrode 400 is located on the diode layer 300；And it drives
Dynamic portion 900 be electrically connected, for sensing as subject is located at institute at least one of the first electrode and second electrode
State substrate lower part and capacitor of at least one in the first electrode and second electrode that change between subject.
In one embodiment, substrate 100 includes transmission region 120 and light area 110.For example, substrate is covering substrate.
Substrate 100 can be used as base substrate 100, which is used to that the constituent element for constituting light sensing apparatus to be arranged.Light transmission
Region 120 is the region outside the light transmission to substrate 100 exported by aftermentioned light-emitting component.Light area 110 is by shining
The light of element output is reflected and is incident on the region of substrate 100.
Substrate 100 is formed by glass, silicon wafer or plastics.Substrate 100 with a thickness of 0.4~0.6mm.The top table of substrate
Face is square shape, anyhow respectively 4mm.
In one embodiment, the shielded layer on illumination region 500 and the transmission region 120 separates configuration, and configures
In lower basal plate.Illumination region 500 exports the light of specific wavelength section according to LED control signal.For example, illumination region 500 is luminous
Diode (LED), infrared light-emitting diode (Infrared Emitting Diode), swashs at Organic Light Emitting Diode (OLED)
Optical diode (Laser Diode).For example, illumination region 500 exports green light.
Illumination region 500 can be towards any one direction or all direction irradiation lights.The light quilt irradiated by illumination region 500
Subject reflection on substrate 100, and received by diode layer 300.Illumination region 500 can be only fitted to aftermentioned lower part
On substrate 100.
In one embodiment, first electrode 200 is located on light area 110.First electrode is configured towards the lower basal plate.
For example, first electrode is transparent electrode or metal electrode.First electrode 200 can be formed as on whole light area 110
One, is also segmented into multiple formation.First electrode 200 deposits on the substrate 100.First electrode 200 is located at by light-emitting component
The light of output is by reflection and on incident path.For example, first electrode 200 is first electrode.First electrode is by that can make incidence
Light transmission and form the transparent conductivity substance of electric current flowing.
For example, first electrode 200 can by zinc aluminum gallium oxide (GAZO), mixed with zinc oxide (GZO), the tin indium oxide of gallium
One of (ITO) it is formed.
First electrode 200 with a thickness of 350~450nm.
The electric current exported by diode layer 300 flow to the member being electrically connected with first electrode 200 by first electrode 200
Part.
In one embodiment, diode layer 300 is located in first electrode 200.Diode layer 300 is located to be exported by light-emitting component
Light by reflection and on incident path.Incident light is converted into electric energy and exported by diode layer 300.Diode layer 300
For circular shape, peripheral radius is 1000um~2000um.Peripheral radius is the radius of the outside circle of the diode layer of ring-shaped.
Peripheral radius is c shown in Fig. 7.The area of diode layer is 1mm2~5mm2。
In one embodiment, second electrode 400 is located on diode layer 300.Second electrode 400 is located to be exported by light-emitting component
Light by reflection and on incident path.The electric current exported by diode layer 300 is flow to and the second electricity by second electrode 400
The element that pole 400 is electrically connected.
Second electrode 400 includes the high metal of reflectivity, will pass through the light quilt of first electrode 200 and diode layer 300
It reflects again and reabsorbs diode layer 300.For example, second electrode is transparent electrode or metal electrode.For example, the second electricity
Pole 400 includes aluminium (Al) or silver (Ag).
Second electrode 400 is with a thickness of 350~450nm.
First electrode 200, diode layer 300 and second electrode 400 above-mentioned are stacked gradually in the surface of substrate 100.
At this point, various deformation can be carried out to the shape of first electrode 200, diode layer 300 and second electrode 400.
First electrode 200, diode layer 300 and second electrode 400 are located at the central axis 700 or so of self-luminescent part 500
Within scheduled distance.Including the light that is exported by illumination region 500 can by pass through region.
Diode layer 300 is formed in 100 top of substrate by vacuum deposition method with thin film shape.
In one embodiment, light area 110 surrounds transmission region 120.Transmission region 120 is located at the central part of substrate 100,
Light area 110 is located at the edge of substrate 100 relative to transmission region.
In one embodiment, at least one of the transparent electrode, metal electrode and shielded layer be used for sense capacitance
Driving portion 900 be electrically connected.When subject is adjacent with light sensing apparatus, driving portion is with self-capacitance (Self capacitance)
Mode senses increased capacitor.
In one embodiment, one in the transparent electrode, metal electrode and shielded layer with the transmission of the driving portion
Portion connects, and one connect with the receiving unit of the driving portion in residue two.When subject is adjacent with light sensing apparatus, driving
Portion senses the electricity between two electrodes (TX, RX send, receive) of reduction in a manner of mutual capacitance (mutual capacitance)
Hold.
In one embodiment, the shielded layer is connect with the transmission unit.The transmission unit of driving portion is connect with shielded layer, is received
Portion is connect with first electrode or second electrode.
Driving portion 900 is used as Signal Processing Element, can be implemented as the integrated electricity for being installed on aftermentioned lower basal plate lower part
The form on road.Driving portion 900 senses the electricity of at least one of first electrode 200 and second electrode 400 between subject
Hold.That is, driving portion 900 is connect at least one of first electrode 200 and second electrode 400, receive by first electrode 200
And the capacitance sensing signal of at least one of second electrode 400 output.
Driving portion 900 constantly receives the capacitor exported by least one of first electrode 200 and second electrode 400
In sensing signal, the real time measure first electrode 200 and second electrode 400 is a few capacitor between subject.When
When capacitor is predetermined value or more, light sensing apparatus exports the signal worn.For example, being output to the display of light sensing apparatus
Portion.
In addition, driving portion 900 connects when the light irradiated by illumination region 500 is reflected by subject and is incident to diode layer
Receive the photo-signal exported by diode layer.The received photo-signal of the analysis of driving portion 900 institute simultaneously measures pulse rate.
When driving portion 900 is only connect with first electrode 200, alternately received with specific time interval defeated by first electrode 200
Capacitance sensing signal out and the photo-signal by diode layer output.
In one embodiment, light sensing apparatus further comprises lower basal plate 600.Lower basal plate 600 is that layout has and can become
The plate for the circuit being more routed may include being owned that can be formed made of the insulating materials of conductive pattern on insulating substrate surface
Printed article, wiring plate and insulating substrate.
Lower basal plate 600 can be rigidity (rigid) or flexible (flexible's).For example, lower basal plate 600 can
To include glass or plastics.In detail, lower basal plate 600 may include soda-lime glass (soda lime glass) or aluminium
The chemical temperings such as silicate glass/semi-tempered glass, or may include polyimides (Polyimide, PI), poly- terephthaldehyde
Sour glycol ester (polyethylene terephthalate, PET), propylene glycol (propylene glycol, PPG), poly- carbon
The tempering or flexiplast of acid esters (PC) etc. may include sapphire.
Lower basal plate 600 may include light isotropism film.As an example, the lower basal plate 600 may include COC
(Cyclic Olefin Copolymer, cyclic olefine copolymer), COP (Cyclic Olefin Polymer, cyclic olefin polymerization
Object), light isotropism polycarbonate (polycarbonate, PC) or light isotropism polymethyl methacrylate (PMMA)
Deng.
Lower basal plate 600 can partially have curved surface and be bent.That is, 600 part of lower basal plate has plane, partially have
It can be bent while curved surface.In detail, the end of the lower basal plate 600 with curved surface and is bent or has random curvature
Surface and can be bent or warpage.
On the other hand, the lower basal plate 600 of the utility model can be by PCB (printed circuitboard, printing electricity
Road plate) or ceramic substrate formed.At this point, PCB substrate foundation circuit design, by the electric wire for being used to connect circuit component to be routed
Figure indicates, electric conductor can be reproduced on insulant.In addition, electric appliance component can be carried and formed for they to be carried out electricity
The wiring of road connection, the component other than the electrical connection function of component can be mechanically fixed.
Substrate 100 is formed in the lower part of lower basal plate 600.Substrate 100 can be formed directly under lower basal plate 600
Portion.Substrate 100 can be supported and be fixed by being formed in the next door of the lower part of lower basal plate 600.Next door is passing through illumination region 500
Before the light transmissive substrate 100 of irradiation, it is blocked to reach diode layer.Also, next door be located at substrate 100 and lower basal plate 600 it
Between, form the space that can configure illumination region 500 or diode layer.
Fig. 2 is the cross-sectional view for showing the structure for the diode layer 300 that an embodiment is related to.
In one embodiment, diode layer 300 includes P layer 310, silicon layer 320 and N layer 330.P layer 310, silicon layer 320 and
N layer 310 100 is laminated on substrate along vertical direction.
In one embodiment, P layer 310 is configured on 200 top of first electrode.P layer 310 includes monocrystalline silicon, polysilicon and non-
One of crystal silicon.
In one embodiment, silicon layer 320 is configured on 310 top of P layer.Silicon layer 320 includes monocrystalline silicon, polysilicon and amorphous silicon
One of.
In one embodiment, N layer 330 is configured on 320 top of silicon layer.N layer 330 includes monocrystalline silicon, polysilicon and amorphous silicon
In any one.
Fig. 3 is the perspective view for showing the first electrode 200 that an embodiment is related to.
In one embodiment, the first electrode 200 includes optical signal transmissive portions 210 and protruding portion 220.
In one embodiment, optical signal transmissive portions 210 transmit optical signal.It is attached that optical signal transmissive portions 210 will be located at substrate 100
The light transmission of close subject reflection.The light of transmission is received by diode layer 300.
In one embodiment, first electrode 200 can be wider than diode layer 300.First electrode 200 includes protruding portion 220, the
One electrode is more prominent relative to the periphery of diode layer 300.
In one embodiment, protruding portion 220 is not contacted with the diode layer 300, and is directed towards outer exposed.In detail,
Protruding portion 220 can be relative to the more prominent formation in periphery of diode layer 300.Protruding portion 220 and be formed in substrate 100 or
The circuit of lower basal plate 600 is electrically connected.Diode layer 300 is conveyed to shape by protruding portion 220 by the electric energy of incident light output
At in the circuit of substrate 100 or lower basal plate 600.
Optical signal transmissive portions 210 are directly connected to diode layer 300, protruding portion 220 by optical signal transmissive portions 210 and with
Pole pipe layer 300 is indirectly connected with.
In one embodiment, at least part of the protruding portion 220 is formed as angular shape.Protruding portion 220 with
The distance between optical signal transmissive portions 210 are remoter, and area is smaller, and one end is formed as angular shape.The shape of protruding portion 220
Shape is not limited to this, as long as being formed at the shape in the outside direction region of optical signal transmissive portions 210, is not limited.
Fig. 4 is the perspective view for showing the first electrode 200 that another embodiment is related to.
In one embodiment, the interior expansion portion 230 is formed as annular.Inner circumferential of the interior expansion portion relative to diode layer
Exposure.Interior expansion portion 230 is formed as annular in 210 inside region of optical signal transmissive portions.Pass through internally positioned enlarged portion 230
In opening, can make by illumination region irradiate light pass through.Optical signal transmissive portions 210 are directly connected to diode layer 300, and
And interior expansion portion 230 is linked indirectly by optical signal transmissive portions 210 and diode layer 300.Interior expansion portion 230 and formation
It is electrically connected in substrate 100 or the circuit of lower basal plate 600.
Fig. 5 is the perspective view for showing the second electrode 400 that an embodiment is related to.
In one embodiment, second electrode 400 can be wider than diode layer 300.Second electrode 400 may include interconnecting piece,
Second electrode 400 is more prominent relative to the periphery of diode layer 300.
In one embodiment, the second electrode 400 includes the interconnecting piece 410 that at least part is formed as angular shape.
Interconnecting piece 410 is electrically connected with the circuit for being formed in substrate 100 or lower basal plate 600.Diode layer 300 is by incident light output
Electric energy the circuit for being formed in substrate 100 or lower basal plate 600 is conveyed to by interconnecting piece 410.
Fig. 6 is the solid for showing first electrode 200, diode layer 300 and second electrode 400 that an embodiment is related to
Figure.
First electrode 200, diode layer 300 and second electrode 400 are in the state that central axis 700 is consistent by upper and lower level
It is folded.Central axis 700 be from upper surface vertically downward from central axis 700 under 100 state of substrate.
First electrode 200, diode layer 300 and second electrode 400 are formed as cyclic annular.That is, first electrode 200, two poles
The central part of tube layer 300 and second electrode 400 is formed with the opening as transmission region.Led to by the light that illumination region 500 irradiates
Opening is crossed to be output to outside substrate 100.
When first electrode 200, diode layer 300 and second electrode 400 are referred to as acceptance part by state stacked on top of one another,
Acceptance part may include divided scheduled predetermined region.The optical signal for being absorbed or reflecting that acceptance part can will receive
Area information be sent to driving portion 900.
Driving portion 900 receives the area information, and can be confirmed that the optical signal of the acceptance part receives position.At this point,
When acceptance part is divided into the predetermined region set, user, can be by light part by the control using driving portion 900
At proper shape.For example, cyclic annular acceptance part can be divided into trisection, the quartering, five etc. can also be suitably divided into
It is divided to, two equal parts etc..
For example, acceptance part is divided into scheduled region, be segmented into acceptance part upper layer, on the downside of acceptance part, on the left of acceptance part,
On the right side of acceptance part.It, will be by acceptance part when the optical signal irradiated from illumination region 500 is reflected and sensed by light upper layer by subject
The area information that layer senses is sent to driving portion 900, and driving portion 900, which can be confirmed, receives optical signal by acceptance part upper layer.
Fig. 7 is the cross-sectional view for showing the structure for the light sensing apparatus that another embodiment is related to.
In one embodiment, substrate 100 is located at the lower part of first electrode 200.In detail, the light area of substrate 100 110
In 200 lower part of first electrode.
In one embodiment, light sensing apparatus further comprises the shielded layer 800 with the opening on the substrate 100.Screen
Covering layer includes the opening on transmission region.Shielded layer 800 and first electrode 200 separate at predetermined intervals and are located at substrate
It is electrically separated with first electrode 200 on 100.Specified interval is 80~120um.Shielded layer 800 by zinc aluminum gallium oxide (GAZO), mix
There is the formation of one of zinc oxide (GZO), tin indium oxide (ITO) of gallium.In technique, shielded layer 800 can be in the second electricity of manufacture
It is formed during pole 400.When portion forms diode layer 300 on the substrate 100, the whole surface deposition on 100 top of substrate
Metal can remove unnecessary portion by etch process, can generate second electrode 400 and shielded layer 800 simultaneously.
In one embodiment, the area of the shielded layer is greater than the area of the diode layer.The transmission unit and screen of driving portion
Cover layer connection, mutually in a capacitive manner sense capacitance when, it is necessary to width for the area of TX (transmission) electrode, therefore, the face of shielded layer
Product is greater than the area of the diode layer.
In one embodiment, the peripheral radius of the shielded layer is 500um~1500um.Peripheral radius is ring shielding layer
The radius of outside circle.Peripheral radius is a shown in Fig. 7.
In one embodiment, the peripheral radius of the opening is 50um~500um.Peripheral radius is the radius of opening.Periphery
Radius is b shown in Fig. 7.
In one embodiment, virtual level 1000 is configured around the light area.Virtual level 1000 know that diode layer can not
Not, and light sensing apparatus internal circuit can not can not be seen from outside.Virtual level 1000 and first electrode interval, and it is located at the
One electrode periphery.The virtual level can be configured in a manner of separating 10um~200um with first electrode.When separated by less than 10um
When, short circuit may occur between first electrode and virtual level, when interval is greater than 200um, diode layer may be identified.
In one embodiment, the shielded layer 800 of the first electrode 200 on the substrate 100, and with it is described
Shielded layer 800 separates and is located at identical plane.The shielded layer can be in a manner of separating 10um~200um with first electrode
Setting.When separated by less than 10um, short circuit, when separating greater than 200um, two poles may occur between first electrode and shielded layer
Tube layer may be identified.Shielded layer 800, which is located at, to be formed in the opening of first electrode 200, and is reduced and irradiated by illumination region 500
Light the visual field (FOV, Field of View).
In one embodiment, the driving portion 900 is electrically connected with shielded layer, for sensing as subject is located at the substrate
Lower part and the capacitor between the shielded layer changed and subject.
Driving portion 900 persistently receives the capacitance sensing signal exported by shielded layer, the real time measure shielded layer and subject it
Between capacitor.When capacitor is more than predetermined value, the signal of light sensing apparatus has been worn in output.For example, being output to light sensing dress
The display unit set.
When driving portion 900 is all connect with shielded layer and first electrode, driving portion 900 is alternately connect with specific time interval
The capacitance sensing signal exported by first electrode and the photo-signal exported by diode layer are received, while being received by shielded layer
The capacitance sensing signal of output and the photo-signal exported by diode layer.
In one embodiment, light sensing apparatus includes: substrate, including transmission region and light area；Illumination region, described
Configuration is separated with the substrate on transmission region；First electrode is located on the light area；Diode layer is located at described the
On one electrode；Shielded layer, including the opening on the substrate；Second electrode on driving portion 900, with the diode layer and
Shielded layer electrical connection, for sense with subject is located at the substrate lower part and the electricity between the shielded layer changed and subject
Hold.
Driving portion 900 receives the capacitance sensing signal exported by shielded layer and the photoelectric current exported by diode layer simultaneously
Signal.
Fig. 8 is the cross-sectional view for showing the structure for the Photosensing Units that an embodiment is related to.
In one embodiment, Photosensing Units includes: substrate 100, including transmission region 120 and light area 110；First
Electrode 200 is located on the light area 110；Diode layer 300 is located in the first electrode 200；And second electrode
400, it is located on the diode layer 300, the light area 110 surrounds the transmission region 120, and the diode layer
300 include amorphous silicon.
In one embodiment, substrate 100 includes transmission region 120 and light area 110.Substrate 100 may be used as basis
Substrate 100, the base substrate 100 are used to place the constituent element for constituting light sensing apparatus.Transmission region 120 is by aftermentioned hair
Region outside the light transmission to substrate 100 of optical element output.Light area 110 is reflected simultaneously by the light of light-emitting component output
It is incident on the region of substrate 100.
Substrate 100 is formed by glass, silicon wafer or plastics.Substrate 100 with a thickness of 0.4~0.6mm.
In one embodiment, first electrode 200 is located on light area 110.First electrode 200 deposits on the substrate 100.The
One electrode 200 is located at the light exported by light-emitting component by reflection and on incident path.For example, first electrode 200 is the first electricity
Pole.First electrode is by that can make incident light transmission and be formed by the transparent conductivity substance of electric current flowing.
For example, first electrode 200 can by zinc aluminum gallium oxide (GAZO), mixed with zinc oxide (GZO), the tin indium oxide of gallium
One of (ITO) it is formed.
First electrode 200 with a thickness of 350~450nm.
The electric current exported by diode layer 300 flow to the member being electrically connected with first electrode 200 by first electrode 200
Part.
In one embodiment, diode layer 300 is located in first electrode 200.Diode layer 300 is located to be exported by light-emitting component
Light by reflection and on incident path.Diode layer 300 will be converted into electric energy by incident light and export.
In one embodiment, second electrode 400 is located on diode layer 300.Second electrode 400 is located to be exported by light-emitting component
Light by reflection and on incident path.The electric current exported by diode layer 300 is flow to and the second electricity by second electrode 400
The element that pole 400 is electrically connected.
Second electrode 400 includes the high metal of reflectivity, will pass through the light quilt of first electrode 200 and diode layer 300
It reflects again and reabsorbs diode layer 300.For example, second electrode 400 includes aluminium (Al) or silver (Ag).
Second electrode 400 is with a thickness of 350~450nm.
First electrode 200, diode layer 300 and second electrode 400 above-mentioned are stacked gradually in the surface of substrate 100.
At this point, various deformation can be carried out to the shape of first electrode 200, diode layer 300 and second electrode 400.
First electrode 200, diode layer 300 and second electrode 400 are located at the central axis 700 or so of self-luminescent part 500
Within scheduled distance.Including the light that is exported by illumination region 500 can by pass through region.
Diode layer 300 is formed in 100 top of substrate by vacuum deposition method with thin film shape.
In one embodiment, light area 110 surrounds transmission region 120.Transmission region 120 is located at the central part of substrate 100,
Light area 110 is located at the center of substrate 100.
Fig. 9 is the cross-sectional view for showing the structure for the diode layer 300 that an embodiment is related to.
In one embodiment, diode layer 300 includes P layer 310, silicon layer 320 and N layer 330.P layer 310, silicon layer 320 and
N layer 310 is laminated along vertical direction on the substrate 100.
In one embodiment, P layer 310 is configured on 200 top of first electrode.P layer 310 includes monocrystalline silicon, polysilicon and non-
One of crystal silicon.
In one embodiment, silicon layer 320 is configured on 310 top of P layer.Silicon layer 320 includes monocrystalline silicon, polysilicon and amorphous silicon
One of.
In one embodiment, N layer 330 is configured on 320 top of silicon layer.N layer 330 includes monocrystalline silicon, polysilicon and amorphous silicon
One of.
In one embodiment, the first electrode 200 includes optical signal transmissive portions 210 and protruding portion 220.
In one embodiment, optical signal transmissive portions 210 transmit optical signal.Optical signal transmissive portions 210 make from positioned at substrate 100
The light transmission of neighbouring subject reflection.The light of transmission is received by diode layer 300.
In one embodiment, first electrode 200 can be wider than diode layer 300.First electrode 200 includes protruding portion 220, the
One electrode can relative to diode layer 300 periphery it is more prominent.
In one embodiment, protruding portion 220 is not contacted with the diode layer 300, but is exposed to outside.In detail, it dashes forward
Portion 220 can be relative to the more prominent formation in periphery of diode layer 300 out.Protruding portion 220 and be formed in substrate 100 or under
The circuit of portion's substrate 600 is electrically connected.Diode layer 300 is conveyed to be formed by protruding portion 220 from the electric energy of incident light output
In substrate 100 or the circuit of lower basal plate 600.
Optical signal transmissive portions 210 are directly connected to diode layer 300, and protruding portion 220 passes through optical signal transmissive portions 210 and two
Pole pipe layer 300 is indirectly connected with.
In one embodiment, at least part of the protruding portion 220 is formed as angular shape.Protruding portion 220 with
The distance between optical signal transmissive portions 210 are remoter, and area is smaller, and one end is formed as angular shape.The shape of protruding portion 220
Shape is not limited to this, as long as the shape that the lateral direction region for being formed at optical signal transmissive portions 210 is formed, without limit
System.
In one embodiment, the protruding portion 220 is formed as cyclic annular.Protruding portion 220 is in 210 inside region of optical signal transmissive portions
Be formed as cyclic annular.By being located at the opening of protruding portion 220, the light irradiated by illumination region 500 can be made to pass through.Optical signal transmissive portions
210 are directly connected to diode layer 300, and protruding portion 220 is indirectly connected with by optical signal transmissive portions 210 with diode layer 300.It is prominent
Portion 220 is electrically connected with the circuit for being formed in substrate 100 or lower basal plate 600 out.
In one embodiment, the second electrode 400 includes the interconnecting piece 410 that at least part is formed as angular shape.
Interconnecting piece 410 is electrically connected with the circuit for being formed in substrate 100 or lower basal plate 600.Diode layer 300 is from defeated by incident light
Electric energy out is conveyed to the circuit for being formed in substrate 100 or lower basal plate 600 by interconnecting piece 410.
First electrode 200, diode layer 300 and second electrode 400 are in the state that central axis 700 is consistent by upper and lower level
It is folded.Central axis 700 be from upper surface vertically downward from central axis 700 under 100 state of substrate.
First electrode 200, diode layer 300 and second electrode 400 are formed as cyclic annular.That is, first electrode 200, two poles
The central part of tube layer 300 and second electrode 400 is formed with the opening as transmission region.Led to by the light that illumination region 500 irradiates
Opening is crossed to be output to outside substrate 100.
When first electrode 200, diode layer 300 and second electrode 400 are referred to as acceptance part by state stacked on top of one another,
Acceptance part may include divided having set predetermined region.The optical signal for being absorbed or reflecting that acceptance part can will receive
Area information be sent to driving portion 900.
Driving portion 900 receives the area information, and can be confirmed that the optical signal of the acceptance part receives position.At this point,
When acceptance part is divided into the predetermined region set, user, can be by light part by the control using driving portion 900
It is cut into proper shape.For example, cyclic annular acceptance part can be divided into trisection, the quartering, five can also be suitably divided into
Equal part, two equal parts etc..
For example, acceptance part is divided into scheduled region, be segmented into acceptance part upper layer, on the downside of acceptance part, on the left of acceptance part,
On the right side of acceptance part.It, will be by acceptance part when the optical signal irradiated from illumination region 500 is reflected and sensed by light upper layer by subject
The area information that layer senses is sent to driving portion 900, and driving portion 900, which can be confirmed, receives optical signal by acceptance part upper layer.
Figure 10 is the cross-sectional view for showing the structure for the light sensing apparatus element that another embodiment is related to.
In one embodiment, substrate 100 is located at the lower part of first electrode 200.In detail, the light area of substrate 100 110
In 200 lower part of first electrode.
In one embodiment, light sensing apparatus further comprises the shielded layer 800 with the opening on the substrate 100.Screen
It covers layer 800 and first electrode 200 separates specified interval and is located on substrate 100, it is electrically separated with first electrode 200.Between regulation
It is divided into 80~120um.Shielded layer 800 consists of metal.For example, metal is aluminium (Al).In technique, shielded layer 800 can made
It is formed during making second electrode 400.When portion on the substrate 100 forms diode layer 300,100 top of substrate it is entire
Surface deposited metal can remove unnecessary portion by etch process, can generate second electrode 400 and shielding simultaneously
Layer 800.
In one embodiment, the shielded layer 800 of the first electrode 200 on the substrate 100, and with it is described
Shielded layer 800 separates and is located at identical plane.The shielded layer 800, which is located at, to be formed in the opening of first electrode 200, and
Reduce the visual field (FOV, Field of View) of the light irradiated by illumination region 500.
The utility model is illustrated referring to an embodiment shown in the drawings it should be appreciated that this is only exemplary
, thus those skilled in the art can implement various deformation and other equivalent embodiments.The utility model relates to light sensation
Surveying element and light sensing apparatus can be used in dust sensor, gas sensor, color sensor etc., this is to this field skill
Art personnel are obvious.It is not limited to the sensor.Therefore, the real technical protection scope of the utility model should
Only it is defined by the appended claims.
Claims (10)
1. a kind of Photosensing Units characterized by comprising
Substrate, including transmission region and around the light area of the transmission region；
Shielded layer, including the opening being located on the transmission region；
First electrode is located on the light area；
Diode layer is located in the first electrode；And
Second electrode is located on the diode layer,
The first electrode surrounds the shielded layer, and separates with the shielded layer and be located at identical plane.
2. Photosensing Units according to claim 1, which is characterized in that
The diode layer includes:
P layers, configure portion on the first electrode；
Silicon layer configures on the top P layers of；
It N layers, configures on the silicon layer top.
3. Photosensing Units according to claim 1, which is characterized in that
The first electrode is configured towards the lower basal plate.
4. Photosensing Units according to claim 1, which is characterized in that
At least one of the first electrode, second electrode and shielded layer are electrically connected with the driving portion for sense capacitance.
5. Photosensing Units according to claim 2, which is characterized in that
One in the first electrode, second electrode and shielded layer connect with the transmission unit of the driving portion, two remaining
In one connect with the receiving unit of the driving portion.
6. Photosensing Units according to claim 4, which is characterized in that
The shielded layer is connect with the transmission unit.
7. Photosensing Units according to claim 1, which is characterized in that
The area of the shielded layer is greater than the area of the diode layer.
8. Photosensing Units according to claim 1, which is characterized in that
Including the virtual level to configure in a manner of the light area,
The virtual level is configured in plane identical with the shielded layer.
9. Photosensing Units according to claim 1, which is characterized in that
The peripheral radius of the shielded layer is 500um~1500um,
The peripheral radius of the opening is 50um~500um,
The first electrode with a thickness of 350nm~450nm,
The peripheral radius of the diode layer is 1000um~2000um,
The second electrode with a thickness of 350nm~450nm.
10. a kind of light sensing apparatus characterized by comprising
Lower basal plate；
Substrate, including transmission region and light area；
Shielded layer, including the opening being located on the transmission region；
Illumination region separates configuration with the shielded layer on the transmission region, and is configured at lower basal plate；
First electrode is located on the light area；
Diode layer is located in the first electrode；
Second electrode is located on the diode layer, and,
The shielded layer of the first electrode on the substrate, and separate and be located at identical flat with the shielded layer
Face.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160090253A KR20180008214A (en) | 2016-07-15 | 2016-07-15 | Photosensor and Apparatus for detecting photo |
| KR10-2016-0090253 | 2016-07-15 | ||
| PCT/KR2017/000903 WO2018012697A1 (en) | 2016-07-15 | 2017-01-25 | Photosensitive element and photosensitive device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209387131U true CN209387131U (en) | 2019-09-13 |
Family
ID=60953187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201790001057.0U Active CN209387131U (en) | 2016-07-15 | 2017-01-25 | Photosensing Units and light sensing apparatus |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20180008214A (en) |
| CN (1) | CN209387131U (en) |
| WO (1) | WO2018012697A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR200149668Y1 (en) * | 1996-11-29 | 1999-06-15 | 양재신 | Turn signal lamp |
| TW504849B (en) * | 1997-02-25 | 2002-10-01 | Matsushita Electric Ind Co Ltd | Optical receiver |
| JPH11157417A (en) * | 1997-11-26 | 1999-06-15 | Nippon Sheet Glass Co Ltd | Transparent board with detection sensor for deposit |
| JP2009231643A (en) * | 2008-03-24 | 2009-10-08 | Casio Comput Co Ltd | Optical sensing element, photosensor, and display device |
| CN104272474B (en) * | 2012-05-07 | 2016-06-22 | 青井电子株式会社 | The manufacture method of light source incorporated light sensor and light source incorporated light sensor |
-
2016
- 2016-07-15 KR KR1020160090253A patent/KR20180008214A/en not_active Application Discontinuation
-
2017
- 2017-01-25 CN CN201790001057.0U patent/CN209387131U/en active Active
- 2017-01-25 WO PCT/KR2017/000903 patent/WO2018012697A1/en active Application Filing
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| WO2018012697A1 (en) | 2018-01-18 |
| KR20180008214A (en) | 2018-01-24 |
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