CN209358511U - A kind of high-power MOS FET Drive Protecting Circuit - Google Patents
A kind of high-power MOS FET Drive Protecting Circuit Download PDFInfo
- Publication number
- CN209358511U CN209358511U CN201920226372.4U CN201920226372U CN209358511U CN 209358511 U CN209358511 U CN 209358511U CN 201920226372 U CN201920226372 U CN 201920226372U CN 209358511 U CN209358511 U CN 209358511U
- Authority
- CN
- China
- Prior art keywords
- triode
- diode
- connect
- resistance
- mos fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005611 electricity Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Landscapes
- Power Conversion In General (AREA)
Abstract
The utility model discloses a kind of high-power MOS FET Drive Protecting Circuits; the IC chip is connect by resistance R1 with the anode of diode D1; also bridging has triode Q1 on the diode D1; the base stage of the triode Q1 is connect with resistance R1; the emitter of triode Q1 is connect with the cathode of diode D1; the collection motor of the triode Q1 is grounded; the cathode of the diode D1 also passes through resistance R2 and is grounded; the cathode of the diode D1 is also connect with the grid of power part Q2; the source electrode of the power part Q2 is grounded, and the drain electrode of the power part Q2 is connect with VBUS.
Description
Technical field
The utility model relates to protection circuit fields, more particularly, to a kind of high-power MOS FET Drive Protecting Circuit.
Background technique
For thousands of watts of large power supply, as the MOSFET power device of switch change-over, the electric current flowed through is very big；Make
Driving current requires high, open the electric current that moment is usually up to several amperes.Existing driving circuit is generally shown in Fig. 1: institute
It states IC chip to connect by resistance R1 with one end of resistance R2, also bridging has triode Q1, the triode on the resistance R2
The base stage of Q1 is connect with resistance R1, and the emitter of triode Q1 is connect with the other end of resistance R2, the current collection of the triode Q1
Machine ground connection, the resistance R2 also pass through resistance R3 and are grounded, and the resistance R2 is also connect with the grid of power part Q2, the power part
The source electrode of Q2 is grounded, and the drain electrode of the power part Q2 is connect with VBUS.
Existing driving method carries out current limliting to driving current using resistance, and PNP triode is waited when off is quickly put
Electricity reduces loss.There is following deficiency:
Resistance value is about 1-100 Ω, but value is smaller not can be carried out good current limliting, while EMC effect is deteriorated；Value
Bigger that power part can be made to open the rise time is elongated, and calorific value increases.
Meanwhile reaching several arrangements when opening immediate current, very high voltage is formed on resistance；And the pole the B of triode, E
Voltage Vbe is about 0.7V, there is the possibility of triode breakdown when Vbe is more than this value, and very big destruction is formed to circuit
Risk.
Utility model content
The utility model is to overcome above situation insufficient, it is desirable to provide a kind of technical solution that can solve the above problem.
A kind of high-power MOS FET Drive Protecting Circuit, comprising: IC chip, the IC chip pass through resistance R1 and diode
The anode of D1 connects, and also bridging has triode Q1 on the diode D1, and the base stage of the triode Q1 is connect with resistance R1, and three
The emitter of pole pipe Q1 is connect with the cathode of diode D1, and the collection motor ground connection of the triode Q1, the diode D1's is negative
Pole also passes through resistance R2 and is grounded, and the cathode of the diode D1 is also connect with the grid of power part Q2, the source of the power part Q2
Pole ground connection, the drain electrode of the power part Q2 are connect with VBUS.
As a further solution of the present invention: the pressure drop amount of the diode D1 is 0.7V.
As a further solution of the present invention: the triode Q1 is PNP type triode.
Compared with prior art, the utility model has the beneficial effects that
1, diode D1 knot and capacitor can be very good to absorb the immediate current opened, and reduce rush of current, do not influence function
Rate part Q2 improves EMC effect while opening the rise time.
2, diode D1 conduction voltage drop is about 0.7V, and voltage remains unchanged after conducting；Avoid the breakdown of triode Q1
Risk.
3, for being frequently present of noise interference on PCB circuit, because diode D1 needs to be greater than 0.7V and could be connected, by two
Pole pipe D1 is placed into the mistake driving that nearby can be very good suppression circuit noise close to power part Q2 to power part Q2, causes to fry
Machine.
The additional aspect and advantage of the utility model will be set forth in part in the description, partially will be from following description
In become obvious, or recognized by the practice of the utility model.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, before not making the creative labor property
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the circuit diagram of the prior art.
Fig. 2 is the circuit connection diagram of the utility model.
Specific embodiment
Below by the technical scheme in the utility model embodiment is clearly and completely described, it is clear that described
Embodiment is only the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The range of the utility model protection.
Referring to Fig. 2, in the utility model embodiment, a kind of high-power MOS FET Drive Protecting Circuit, the IC chip
It is connect by resistance R1 with the anode of diode D1, also bridging has triode Q1 on the diode D1, the triode Q1's
Base stage is connect with resistance R1, and the emitter of triode Q1 is connect with the cathode of diode D1, and the collection motor of the triode Q1 connects
Ground, the cathode of the diode D1 also pass through resistance R2 and are grounded, and the cathode of the diode D1 also connects with the grid of power part Q2
It connects, the source electrode ground connection of the power part Q2, the drain electrode of the power part Q2 is connect with VBUS.
The pressure drop amount of the diode D1 is 0.7V, so that making voltage remain unchanged after diode D1 conducting；Well
Clamped live in triode Q1, avoids the breakdown risk of triode Q1.
The triode Q1 is PNP type triode.
It is obvious to a person skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and
And without departing substantially from the spirit or essential attributes of the utility model, it can realize that this is practical new in other specific forms
Type.Therefore, in all respects, the present embodiments are to be considered as illustrative and not restrictive, this is practical new
The range of type is indicated by the appended claims rather than the foregoing description, it is intended that containing for the equivalent requirements of the claims will be fallen in
All changes in justice and range are embraced therein.It should not treat any reference in the claims as limiting
Related claim.
Claims (3)
1. a kind of high-power MOS FET Drive Protecting Circuit, comprising: IC chip, which is characterized in that the IC chip passes through resistance
R1 is connect with the anode of diode D1, and also bridging has triode Q1, the base stage and electricity of the triode Q1 on the diode D1
R1 connection is hindered, the emitter of triode Q1 is connect with the cathode of diode D1, the grounded collector of the triode Q1, and described two
The cathode of pole pipe D1 also passes through resistance R2 and is grounded, and the cathode of the diode D1 is also connect with the grid of power part Q2, the function
The source electrode of rate part Q2 is grounded, and the drain electrode of the power part Q2 is connect with VBUS.
2. a kind of high-power MOS FET Drive Protecting Circuit according to claim 1, which is characterized in that the diode D1
Pressure drop amount be 0.7V.
3. a kind of high-power MOS FET Drive Protecting Circuit according to claim 1, which is characterized in that the triode Q1
For PNP type triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920226372.4U CN209358511U (en) | 2019-02-23 | 2019-02-23 | A kind of high-power MOS FET Drive Protecting Circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920226372.4U CN209358511U (en) | 2019-02-23 | 2019-02-23 | A kind of high-power MOS FET Drive Protecting Circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209358511U true CN209358511U (en) | 2019-09-06 |
Family
ID=67803763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920226372.4U Expired - Fee Related CN209358511U (en) | 2019-02-23 | 2019-02-23 | A kind of high-power MOS FET Drive Protecting Circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209358511U (en) |
-
2019
- 2019-02-23 CN CN201920226372.4U patent/CN209358511U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN200976577Y (en) | MOS tube driving circuit and television set having the same | |
| CN202384752U (en) | Switching power supply overcurrent protection circuit | |
| CN106533144B (en) | Anti-reverse and current flowing backwards circuit | |
| CN105356437B (en) | A kind of anti-surge circuit | |
| CN207691419U (en) | A kind of circuit released for bus-bar charge | |
| CN103347329A (en) | LED driving circuit | |
| CN209358511U (en) | A kind of high-power MOS FET Drive Protecting Circuit | |
| CN220234179U (en) | Overcurrent protection circuit | |
| CN104333722B (en) | A kind of low-power consumption start-up circuit and a kind of LCD TV | |
| CN108418409A (en) | Cache peak voltage switching tube and the Switching Power Supply topology with the switching tube | |
| CN108336902A (en) | Boost circuit based on caching peak voltage switching tube | |
| CN204794047U (en) | Thyristor overvoltage crowbar and electromagnetic heating's electrical apparatus | |
| CN205304240U (en) | Control circuit is prevented joining conversely by high -power direct current | |
| CN203911883U (en) | Driving circuit of switch element | |
| CN108988299A (en) | Driving circuit and its protection circuit | |
| CN209001919U (en) | IGBT drive circuit | |
| CN204615368U (en) | Intelligent power module circuit, Intelligent Power Module assembly and air conditioner | |
| CN209056927U (en) | TV antistatic circuit | |
| CN202931270U (en) | IGBT switch plate | |
| CN207868992U (en) | A kind of reclosing single flow driving power | |
| CN202888807U (en) | Overcurrent protection circuit and switch power supply for half-bridge circuit | |
| CN202488417U (en) | Anti-jamming protection circuit | |
| CN205389173U (en) | Driving system and air conditioner | |
| CN101577492B (en) | Power supply circuit | |
| CN207265891U (en) | Low-power consumption AC DC conversion switch circuits |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190906 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |