CN209357652U - A kind of high-pressure-resistant membrane switch - Google Patents
A kind of high-pressure-resistant membrane switch Download PDFInfo
- Publication number
- CN209357652U CN209357652U CN201920365320.5U CN201920365320U CN209357652U CN 209357652 U CN209357652 U CN 209357652U CN 201920365320 U CN201920365320 U CN 201920365320U CN 209357652 U CN209357652 U CN 209357652U
- Authority
- CN
- China
- Prior art keywords
- pressure
- metal dome
- membrane switch
- resistant membrane
- contact
- Prior art date
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- 239000012528 membrane Substances 0.000 title claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 36
- 230000009466 transformation Effects 0.000 claims abstract description 16
- 230000004308 accommodation Effects 0.000 claims abstract description 12
- 238000000926 separation method Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000002086 nanomaterial Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 20
- 239000010409 thin film Substances 0.000 abstract description 20
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Push-Button Switches (AREA)
Abstract
The utility model relates to membrane switch technology fields, disclose a kind of high-pressure-resistant membrane switch.The high-pressure-resistant membrane switch includes film comprising receiving portion；Metal dome comprising lug boss and contact, the lug boss are set in described accommodation section；Circuit board is set to side of the metal dome far from the film, and the circuit board has circuit breakpoint, and the contact can be contacted with the circuit breakpoint and turning circuit；Transformation part, is set on described accommodation section, and the transformation part can adjust the air pressure of described accommodation section, and makes the air pressure of described accommodation section equal to the air pressure of working environment.It can flow and exchange with the air of external operating environment inside thin film switch provided by the utility model, its inside and outside pressure is set to be in equilibrium state always, the pressure of metal dome two sides is also at equilibrium state, the thin film switch is set to work under hyperbaric environment, the probability for reducing erroneous trigger improves the accuracy of thin film switch.
Description
Technical field
The utility model relates to membrane switch technology fields more particularly to a kind of high-pressure-resistant membrane to switch.
Background technique
Thin film switch is an operating system for integrating keypress function, indicator elment, instrument panel.With traditional silicon
Glue switch is compared, and thin film switch has the characteristics that of a tightly knit structure, good appearance, sense of touch be good, long service life, is widely used in electricity
The fields such as sub- communication, electronic measuring instrument, Industry Control, Medical Devices, automobile industry, intelligent toy, household electrical appliance.
As shown in Figure 1, thin film switch includes film 1-1, metal dome 1-2 and circuit board 1-3, film 1-1 is covered on pot son
On piece 1-2, the contact on metal dome 1-2 can be with the circuit communication of circuit board 1-3.When thin film switch is by pressed by external force,
Contact on metal dome 1-2 deforms downwards, and the contact on metal dome 1-2 is connected with the electrical contact of circuit board 1-3, to be formed
Circuit；When the external force of pressing removes, the contact rebound on metal dome 1-2 is returned, contact and circuit board 1- on metal dome 1-2
3 electrical contact disconnects, to play the role of sense of touch type switch between user and instrument.
Generally, it is closed cavity inside existing thin film switch, is suitable in the environment of standard atmospheric pressure.Work as film
When switching work in hyperbaric environment, the inside and outside formation draught head of thin film switch, unilateral power of the metal dome 1-2 by ecto-entad
Effect, the contact on metal dome 1-2 deforms downwards, and the contact on metal dome 1-2 is connected with the electrical contact of circuit board 1-3,
Erroneous trigger is generated, the accuracy of thin film switch is influenced.
Utility model content
It is existing to solve the purpose of this utility model is to provide a kind of high-pressure-resistant membrane switch based on the above
Thin film switch is applied to the problem of caused erroneous trigger in hyperbaric environment, to improve the accuracy of thin film switch.
In order to achieve the above object, the utility model uses following technical scheme:
A kind of high-pressure-resistant membrane switch, comprising:
Film comprising receiving portion；
Metal dome comprising lug boss, contact and ontology, the lug boss and the contact are connected by the ontology,
The lug boss is set in described accommodation section；
Circuit board, is set to side of the metal dome far from the film, and the circuit board has circuit breakpoint, institute
Simultaneously turning circuit can be contacted with the circuit breakpoint by stating contact；
Transformation part, is set on described accommodation section, and the transformation part can adjust the air pressure of described accommodation section, and make institute
The air pressure for stating receiving portion is equal to the air pressure of working environment.
Further, the transformation part is the stomata being opened on described accommodation section.
Further, the quantity of the stomata is two, and two stomatas are symmetrical arranged.
It further, further include separation layer, the separation layer is set between the film and the metal dome.
Further, the separation layer is made of nano material.
Further, the metal dome is made of an electrically conducting material.
Further, the metal dome is made of metal material.
Further, the film is made of plastics.
The utility model has the following beneficial effects:
Transformation part is arranged in the utility model in the receiving portion of film, and transformation part can adjust the air pressure of receiving portion, and make
The air pressure of receiving portion is equal to the air pressure of working environment, and thin film switch inside and the air of external operating environment can flow friendship
It changes, its inside and outside pressure is made to be in equilibrium state always, the pressure of metal dome two sides is also at equilibrium state, makes the thin film switch
It can work under hyperbaric environment, reduce the probability of erroneous trigger, improve the accuracy of thin film switch.
Detailed description of the invention
It, below will be to institute in embodiment description in order to illustrate more clearly of the technical solution of the utility model embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some realities of the utility model
Mode is applied, it for those of ordinary skill in the art, without creative efforts, can also be attached according to these
Figure obtains other attached drawings.Wherein:
Fig. 1 is the explosive view of the thin film switch provided in the prior art；
Fig. 2 is the explosive view for the high-pressure-resistant membrane switch that specific embodiment of the present invention provides.
In figure:
1-1- film；1-2- metal dome；1-3- circuit board；
1- film；2- metal dome；3- circuit board；4- transformation part；5- separation layer；
11- receiving portion；21- lug boss；The contact 22-；23- ontology；31- circuit breakpoint.
Specific embodiment
The utility model is described in further detail with embodiment with reference to the accompanying drawing.It is understood that this
Locate described specific embodiment and is used only for explaining the utility model, rather than the restriction to the utility model.In addition it also needs
Illustrate, illustrates only part relevant to the utility model for ease of description, in attached drawing rather than entire infrastructure.
As shown in Fig. 2, present embodiment provides a kind of high-pressure-resistant membrane switch, high-pressure-resistant membrane switch include film 1,
Metal dome 2, circuit board 3 and transformation part 4.Film 1 includes receiving portion 11, and film 1 is made of plastics.Metal dome 2 includes lug boss
21, contact 22 and ontology 23, lug boss 21 and contact 22 are connected by ontology 23, and lug boss 21 is set in receiving portion 11.Electricity
Road plate 3 is set to side of the metal dome 2 far from film 1, and circuit board 3 has circuit breakpoint 31, and contact 22 can be with circuit breakpoint
31 contacts and turning circuit.Transformation part 4 is set in receiving portion 11, and transformation part 4 can adjust the air pressure of receiving portion 11, and makes to hold
Receive portion 11 air pressure be equal to working environment air pressure.Pass through the air of transformation part 4 and external operating environment inside the thin film switch
Flowing exchange occurs, its inside and outside pressure is made to be in equilibrium state always, the pressure of 2 two sides of metal dome is also at equilibrium state,
So that the thin film switch is worked under hyperbaric environment, reduce the probability of erroneous trigger, improves the accuracy of thin film switch.
Further, transformation part 4 is the stomata being opened in receiving portion 11.Pass through the sky of the stomata and external operating environment
Flowing exchange occurs for gas, so that its inside and outside pressure is in equilibrium state always, the pressure of 2 two sides of metal dome is also at equilibrium-like
State allows the thin film switch to work under hyperbaric environment, reduces the probability of erroneous trigger.In present embodiment, stomata
Quantity is two, and two stomatas are symmetrical arranged.
Specifically, lug boss 21 is set to ontology 23 in the one side of film 1, and contact 22 is set to ontology 23 far from thin
In the one side of film 1.User deforms receiving portion 11 downwards by the pressed by external force receiving portion 11, and then drives metal dome 2
Contact 22 deforms downwards, so that contact 22 be made to contact simultaneously turning circuit with circuit breakpoint 31.When the external force of pressing removes, pot is young
The rebound of contact 22 on piece 2 is returned, and contact 22 and circuit breakpoint 31 disconnect, to play sense of touch type between user and instrument
The effect of switch.
The high-pressure-resistant membrane switch that present embodiment provides further includes separation layer 5, and separation layer 5 is set to film 1 and pot is young
Between piece 2.Specifically, separation layer 5 is made of nano material, can achieve dust-proof, waterproof effect, while not influencing stomata two
The flowing of side gas exchanges, i.e., the air in receiving portion 11 can enter between metal dome 2 and circuit board 3 through separation layer 5
Space, to reach the state of the air pressure balance of 2 two sides of metal dome, to adapt to the working environment of high pressure.
Further, metal dome 2 is made of an electrically conducting material.Preferably, metal dome 2 is made of metal material, and is convenient for contact
22 are connected with circuit breakpoint 31.
Further, it is bonded together by glue between this three layers of film 1, metal dome 2 and circuit board 3, makes its knot
Structure is compact.
Note that above are only the better embodiment and institute's application technology principle of the utility model.Those skilled in the art
It will be appreciated that the utility model is not limited to particular implementation described here, it is able to carry out for a person skilled in the art each
The apparent variation of kind is readjusted and is substituted without departing from the protection scope of the utility model.Therefore, although by above real
Mode is applied to be described in further detail the utility model, but the utility model is not limited only to embodiment of above,
It can also include other more equivalent implementations in the case where not departing from the utility model design, and the utility model
Range is determined by the scope of the appended claims.
Claims (8)
1. a kind of high-pressure-resistant membrane switch characterized by comprising
Film (1) comprising receiving portion (11)；
Metal dome (2) comprising lug boss (21), contact (22) and ontology (23), the lug boss (21) and the contact
(22) it is connected by the ontology (23), the lug boss (21) is set in described accommodation section (11)；
Circuit board (3), is set to the side of the metal dome (2) far from the film (1), and the circuit board (3) has electricity
Road breakpoint (31), the contact (22) can contact with the circuit breakpoint (31) and turning circuit；
Transformation part (4) is set on described accommodation section (11), and the transformation part (4) can adjust described accommodation section (11)
Air pressure, and make the air pressure of described accommodation section (11) equal to the air pressure of working environment.
2. high-pressure-resistant membrane switch according to claim 1, which is characterized in that the transformation part (4) is described to be opened in
Stomata in receiving portion (11).
3. high-pressure-resistant membrane switch according to claim 2, which is characterized in that the quantity of the stomata is two, two
The stomata is symmetrical arranged.
4. high-pressure-resistant membrane switch according to claim 1, which is characterized in that further include separation layer (5), the separation layer
(5) it is set between the film (1) and the metal dome (2).
5. high-pressure-resistant membrane switch according to claim 4, which is characterized in that the separation layer (5) is by nano material system
At.
6. high-pressure-resistant membrane switch according to claim 1, which is characterized in that the metal dome (2) is by conductive material system
At.
7. high-pressure-resistant membrane switch according to claim 5, which is characterized in that the metal dome (2) is by metal material system
At.
8. high-pressure-resistant membrane switch according to claim 1, which is characterized in that the film (1) is made of plastics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920365320.5U CN209357652U (en) | 2019-03-21 | 2019-03-21 | A kind of high-pressure-resistant membrane switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920365320.5U CN209357652U (en) | 2019-03-21 | 2019-03-21 | A kind of high-pressure-resistant membrane switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209357652U true CN209357652U (en) | 2019-09-06 |
Family
ID=67804261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920365320.5U Active CN209357652U (en) | 2019-03-21 | 2019-03-21 | A kind of high-pressure-resistant membrane switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209357652U (en) |
-
2019
- 2019-03-21 CN CN201920365320.5U patent/CN209357652U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518054 Shenzhen national engineering laboratory building a1302, No. 20, Gaoxin South seventh Road, Gaoxin community, Yuehai street, Nanshan District, Shenzhen, Guangdong Province Patentee after: Shenzhen Security Medical Technology Co.,Ltd. Address before: 518054 Shenzhen national engineering laboratory building a1302, No. 20, Gaoxin South seventh Road, Gaoxin community, Yuehai street, Nanshan District, Shenzhen, Guangdong Province Patentee before: AMBULANC (SHENZHEN) TECH. Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP03 | Change of name, title or address |
Address after: 518000, Building 1, 101, Evergrande Fashion Huigu Building, Fulong Road, Shanghenglang Community, Dalang Street, Longhua District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Security Medical Technology Co.,Ltd. Country or region after: China Address before: 518054 Shenzhen national engineering laboratory building a1302, No. 20, Gaoxin South seventh Road, Gaoxin community, Yuehai street, Nanshan District, Shenzhen, Guangdong Province Patentee before: Shenzhen Security Medical Technology Co.,Ltd. Country or region before: China |
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| CP03 | Change of name, title or address |