CN209313740U - A kind of high voltage power semiconductor driving mechanism for switch - Google Patents
A kind of high voltage power semiconductor driving mechanism for switch Download PDFInfo
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- CN209313740U CN209313740U CN201920174826.8U CN201920174826U CN209313740U CN 209313740 U CN209313740 U CN 209313740U CN 201920174826 U CN201920174826 U CN 201920174826U CN 209313740 U CN209313740 U CN 209313740U
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- power semiconductor
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- voltage power
- driving mechanism
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Abstract
A kind of entitled high voltage power semiconductor driving mechanism for switch of the utility model.Belong to power semiconductor applied technical field.Primarily to meeting pulse device, to high voltage power semiconductor switch, there are the high requirements of the gate current climbing of gate-drive, shaky time for it.It is mainly characterized by comprising: by master control system, linear transformer driver and driving output unit three parts form；Wherein, the master control system is switching circuit；The linear transformer driver is made of high insulated cable and its multichannel Nanocrystalline core passed through；Current-limiting resistance and speed-up capacitor are connected in parallel between the master control system and linear transformer driver；The driving output unit is equipped with the multichannel being correspondingly connected with multichannel Nanocrystalline core and drives output circuit.The utility model can be widely applied to high voltage power semiconductor device and drive occasion in series and parallel.
Description
Technical field
The utility model belongs to power semiconductor applied technical field.More particularly to a kind of high voltage power semiconductor switch
Driving device.
Background technique
High voltage power semiconductor switch is made of in series and parallel semiconductor devices such as more pulse thyristors, GTO.These pulses
Need to bear higher di/dt in power semiconductor work, therefore the pulse device gate current that pole drives on the door rises
Rate, shaky time have higher requirement.Separately since high voltage power semiconductor switch is mostly cascaded structure, every power semiconductor
Switch room has certain voltage difference, needs to solve voltage isolation problem between the driving of high voltage power semiconductor device.A kind of high pressure
The driving device of power semiconductor switch is comprehensive solve be dielectrically separated from, the triggering of consistency pulse, gate pole high current climbing
This Three Difficult Issues improves the stability of system.
Summary of the invention
To solve the above problems, the utility model provides the driving device of high voltage power semiconductor switch.The driving device
Using efficient coupling mode, the corresponding high gate current climbing pulsed drive model of width can be exported according to customer demand.It returns
Road is simple, and use is safe, and switch performance is reliable, opens that consistency is good, and high service life is applicable in and the height in different application field
Press semiconductor valve group component trigger pulse device.
The technical solution of the utility model is: a kind of high voltage power semiconductor driving mechanism for switch, it is characterised in that:
It is made of master control system, linear transformer driver and driving output unit three parts；Wherein, the master control system is switch electricity
Road；The linear transformer driver is made of high insulated cable and its multichannel Nanocrystalline core passed through；The master control system
Current-limiting resistance and speed-up capacitor are connected in parallel between linear transformer driver；The driving output unit is equipped with and receives with multichannel
The multichannel driving output circuit that the brilliant magnet ring of rice is correspondingly connected with.
Switching circuit described in the technical solution of the utility model is IGBT switching circuit, including IGBT device；
IGBT collector is connect through freewheeling diode with a DC power supply circuit；It is equipped with successively between IGBT grid and signal input part
Optical fiber head, transistor amplifier and the second level push-pull amplifier circuit of connection；IGBT emitter and DC power supply circuit negative terminal phase
Even.
It is multichannel diode rectifier circuit that multichannel described in the technical solution of the utility model, which drives output circuit,.
Diode rectifier circuit described in the technical solution of the utility model includes one output end of Nanocrystalline core
The positive diode and resistance concatenated between the end power semiconductor G to be controlled, another output end of Nanocrystalline core with it is to be controlled
The connection of the end power semiconductor K, is reversely connected diode between one output end of Nanocrystalline core and another output end.
The both ends of high insulated cable described in the technical solution of the utility model and the both ends of freewheeling diode are logical
It crosses the current-limiting resistance being connected in parallel and speed-up capacitor is correspondingly connected with.
DC power supply circuit described in the technical solution of the utility model is made of rectification circuit and filter circuit,
The input terminal of rectification circuit is mains connection.
Second level push-pull amplifier circuit described in the technical solution of the utility model uses positive-negative power.
Rectification circuit described in the technical solution of the utility model is rectifier bridge；The filtered electrical routing capacitance
It constitutes.
The utility model using by master control system, linear transformer driver and driving output unit three parts due to forming
High voltage power semiconductor driving mechanism for switch, wherein the master control system be switching circuit, the linear transformer driver
It is made of high insulated cable and its multichannel Nanocrystalline core passed through, between the master control system and linear transformer driver simultaneously
Connection connection current-limiting resistance and speed-up capacitor, the driving output unit are equipped with the multichannel being correspondingly connected with multichannel Nanocrystalline core and drive
Dynamic output circuit, thus after master control system reception signal, it is high to generate one in linear transformer driver primary side for driving switch circuit
The pulse current of current-rising-rate, the electric current are coupled to transformer secondary, linear transformer driver pair by Nanocrystalline core
While being coupled out the driving signal of high gate current climbing, output circuit is driven to be output to corresponding power semiconductor by multichannel
Device.The utility model have circuit it is simple, using safe, switch performance is reliable, opens the good and high service life of consistency
The characteristics of, it can be widely applied to the high voltage power semiconductor switching device of different driving pulsewidth demand.
Detailed description of the invention
Fig. 1 is the principles of the present invention block diagram.
Fig. 2 is the circuit diagram of the utility model master control system.
Fig. 3 is the circuit diagram of the utility model linear transformer driver and driving output unit.
In figure: 1. master control systems；2. linear transformer driver；3. driving output unit；4. optical fiber head；5. high
Insulated cable；6. Nanocrystalline core.
Specific embodiment
The utility model is described in further detail with reference to the accompanying drawing.
As shown in Figure 1, a kind of high voltage power semiconductor driving mechanism for switch of the utility model is by master control system 1, linear type
Pulse transformer 2 and driving 3 three parts of output unit composition, use current limliting between master control system 1 and linear transformer driver 2
Resistance R1 is connected in parallel with speed-up capacitor C1.
As shown in Fig. 2, master control system 1 is IGBT switching circuit, including IGBT device.IGBT collector is through freewheeling diode
D1 is connect with a DC power supply circuit, and IGBT collector is connect with 1 anode of sustained diode, the negative and positive of sustained diode 1
Extremely A, B contact.Sequentially connected optical fiber head (OPI) 4, triode amplification electricity are equipped between IGBT grid and signal input part
Road, second level push-pull amplifier circuit and resistance R5.DC power supply circuit is made of rectification circuit and filter circuit, and rectification circuit is whole
Bridge is flowed, the input terminal of rectifier bridge is mains connection, and filtered electrical routing capacitance C2 is constituted, 1 cathode of sustained diode and capacitor C2
Anode connection.Transistor amplifier is made of triode V1, resistance R2, R3, R4, for conventional amplifying circuit.Second level, which is recommended, puts
Big circuit includes that the level-one push-pull amplifier circuit being made of triode V2, V3 and another grade being made of triode V4, V5 are recommended
Amplifying circuit, second level push-pull amplifier circuit use positive-negative power+VCC ,-VCC.It is connected between IGBT grid and capacitor C2 cathode
Resistance R6.IGBT emitter is connected with capacitor C2 negative terminal.
User connects 1 power supply of master control system, and electric main is rectified into direct current and passes through capacitor C1 for energy by rectifier bridge electrification
Storage.Light pulse column are input to optical fiber head (OPI) 4 by user, and optical signal is converted to analog signal by optical fiber head (OPI) 4.Mould
Quasi- signal is exported by triode V1, and by triode V2, triode V3,2 poles of triode V4, triode V5 composition are recommended
It is connect after circuit amplification with IGBT grid, drives IGBT.Triode V2, triode V3, the 2 of triode V4, triode V5 composition
Pole push-pull circuit uses positive-negative power, when without control input signal, by the grid locking of IGBT in negative supply, it is ensured that in high pressure
Interference signal under strong magnetic field circumstance will not false triggering IGBT, cause high voltage power semiconductor switch to mislead.
As shown in figure 3, linear transformer driver 2 is by high insulated cable 5 and its 6 structure of multichannel Nanocrystalline core passed through
At driving output unit 3 is equipped with the multichannel being correspondingly connected with multichannel Nanocrystalline core 6 and drives output circuit.Linear type pulse becomes
Depressor 2 is the prior art, and primary side contact is A, B.It is multichannel diode rectifier circuit that multichannel, which drives output circuit, and diode is whole
Current circuit includes positive between first 6 one output end of Nanocrystalline core and first end power semiconductor G to be controlled concatenates
Diode D2 and resistance R7, first another output end of Nanocrystalline core 6 and first end power semiconductor K to be controlled connect
It connects, diode D3 ... ..., n-th Nanocrystalline core is reversely connected between first 6 one output end of Nanocrystalline core and another output end
The positive diode D4 and resistance R8 concatenated, n-th nanometer between 6 one output ends and the end n-th power semiconductor G to be controlled
Another output end of brilliant magnet ring 6 is connect with the end n-th power semiconductor K to be controlled, 6 one output end of n-th Nanocrystalline core with
Diode D5 is reversely connected between another output end.The end primary side A of high insulated cable 5 connect limit in parallel with 1 negative terminal of sustained diode
The end A after leakage resistance R1 and speed-up capacitor C1 is correspondingly connected with, the end primary side B of high insulated cable 5 and the end pair B of sustained diode 1
It should connect.The every road Nanocrystalline core of linear transformer driver 2 exports driving unit all the way, by leading to after 2 road diode rectifications
Cross the end G, K that current-limiting resistance is output to every road power semiconductor.
The driving device linked manner of high voltage power semiconductor switch is as follows: device powers on, by rectification circuit by energy
It is stored in capacitor C2, the IGBT of master control system 1 is triggered by control fiber-optic signal, the energy of storage capacitor C2 passes through current-limiting resistance
R1, speed-up capacitor C1, the release of 2 primary side of linear transformer driver are coupled out high gate pole electricity on the secondary side of linear transformer driver 2
The driving signal for flowing climbing, is output to corresponding power semiconductor by diode rectification.
Claims (8)
1. a kind of high voltage power semiconductor driving mechanism for switch, it is characterised in that: by master control system (1), linear type pulse transforming
Device (2) and driving output unit (3) three parts composition；Wherein, the master control system (1) is switching circuit；The linear type arteries and veins
Transformer (2) is rushed to be made of high insulated cable (5) and its multichannel Nanocrystalline core (6) passed through；The master control system (1) and straight
Current-limiting resistance (R1) and speed-up capacitor (C1) are connected in parallel between line style pulse transformer (2)；The driving output unit (3) sets
There is the multichannel being correspondingly connected with multichannel Nanocrystalline core (6) to drive output circuit.
2. a kind of high voltage power semiconductor driving mechanism for switch according to claim 1, it is characterised in that: the switch
Circuit is IGBT switching circuit, including IGBT device；IGBT collector is through freewheeling diode (D1) and a DC power supply circuit
Connection；Sequentially connected optical fiber head (4), transistor amplifier and second level is equipped between IGBT grid and signal input part to recommend
Amplifying circuit；IGBT emitter is connected with DC power supply circuit negative terminal.
3. a kind of high voltage power semiconductor driving mechanism for switch according to claim 1 or 2, it is characterised in that: described
It is multichannel diode rectifier circuit that multichannel, which drives output circuit,.
4. a kind of high voltage power semiconductor driving mechanism for switch according to claim 3, it is characterised in that: two poles
Tube rectifying circuit includes positive two poles concatenated between (6) one output end of Nanocrystalline core and the end power semiconductor G to be controlled
Pipe (D2, D4) and resistance (R7, R8), Nanocrystalline core (6) another output end connect with the end power semiconductor K to be controlled, receive
Diode (D3, D5) is reversely connected between brilliant (6) one output end of magnet ring of rice and another output end.
5. a kind of high voltage power semiconductor driving mechanism for switch according to claim 2, it is characterised in that: the height is absolutely
The both ends of edge cable (5) and the both ends of freewheeling diode (D1) pass through the current-limiting resistance (R1) being connected in parallel and speed-up capacitor (C1)
It is correspondingly connected with.
6. a kind of high voltage power semiconductor driving mechanism for switch according to claim 2, it is characterised in that: the direct current
Power circuit is made of rectification circuit and filter circuit, and the input terminal of rectification circuit is mains connection.
7. a kind of high voltage power semiconductor driving mechanism for switch according to claim 2, it is characterised in that: the second level
Push-pull amplifier circuit uses positive-negative power (+VCC ,-VCC).
8. a kind of high voltage power semiconductor driving mechanism for switch according to claim 6, it is characterised in that: the rectification
Circuit is rectifier bridge；The filtered electrical routing capacitance (C2) is constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920174826.8U CN209313740U (en) | 2019-01-31 | 2019-01-31 | A kind of high voltage power semiconductor driving mechanism for switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920174826.8U CN209313740U (en) | 2019-01-31 | 2019-01-31 | A kind of high voltage power semiconductor driving mechanism for switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209313740U true CN209313740U (en) | 2019-08-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920174826.8U Active CN209313740U (en) | 2019-01-31 | 2019-01-31 | A kind of high voltage power semiconductor driving mechanism for switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209313740U (en) |
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2019
- 2019-01-31 CN CN201920174826.8U patent/CN209313740U/en active Active
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