CN209280628U - Heavy metal sensing chip - Google Patents

Heavy metal sensing chip Download PDF

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Publication number
CN209280628U
CN209280628U CN201822233918.7U CN201822233918U CN209280628U CN 209280628 U CN209280628 U CN 209280628U CN 201822233918 U CN201822233918 U CN 201822233918U CN 209280628 U CN209280628 U CN 209280628U
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Prior art keywords
electrode
heavy metal
working electrode
sensing chip
layer
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CN201822233918.7U
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Chinese (zh)
Inventor
高国伟
宋钰
胡敬芳
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Nanjing Guoke Shipboard Sensing Technology Co Ltd
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Nanjing Guoke Shipboard Sensing Technology Co Ltd
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Abstract

The utility model discloses a heavy metal species sensing chips.The heavy metal sensing chip includes: dielectric substrate layers, electrode layer, porous graphene film layer, electrode package layer.Electrode layer is covered on the surface of dielectric substrate layers, and electrode layer includes to electrode and being connected to, to contact conductor disk, electrode layer further includes the working electrode lead wire tray of working electrode and connection on the working electrode (s on electrode.It is semi-enclosed circular ring type structure to electrode, contact conductor disk is extended in a first direction from the opening of the cirque structure, working electrode is circular configuration and is surrounded in a non-contact manner to electrode that working electrode lead wire tray also extends in a first direction.Porous graphene film layer is circular configuration, is covered on the surface of working electrode.Electrode package layer is covered on the surface to contact conductor disk and working electrode lead wire tray.The heavy metal sensing chip can be improved the sensitivity of heavy metal analysis, and compact structure is at low cost.

Description

Heavy metal sensing chip
Technical field
The utility model is about water quality inspection technique field, especially with regard to a heavy metal species sensing chip.
Background technique
Heavy metal analysis is for reflecting heavy metal ion in aqueous solution (such as lead, zinc, cadmium plasma) concentration, unit μ g/L.Concentration is higher, and heavy metal ion current-responsive is bigger in water.In the dissolution peak current of heavy metal ion and water heavy metal from Sub- concentration is positively correlated, and can distinguish heavy metal ion type, analyzing water body pollution by the dissolution spike potential of heavy metal ion Characteristic is an important indicator in water quality national standard.
Inventor has found that heavy metal analysis traditional at present all uses optical sensor during realizing the utility model Or electrochemical sensor.Optical instrument size is big, equipment is expensive, sampling test period is long.Electrochemical sensor sensitivity is not Height is not suitable for trace heavy metal detection.
Since graphene has excellent optics, electricity, mechanical characteristic, graphene technology becomes the emphasis of current research, Porous graphene is also developed on this basis, porous graphene is the carbon material on two-dimentional basal plane with nanoscale hole, The excellent property of graphene is not only remained, but also compares inert graphene surface, the presence in hole promotes matter transportation effect The hole of the raising of rate, especially atomic level can play the role of the various sizes of ion/molecular of screening.
The information disclosed in the background technology section is intended only to increase the understanding to the general background of the utility model, and It is not construed as recognizing or implying in any form that information composition is already known to those of ordinary skill in the art existing Technology.
Utility model content
The purpose of this utility model is to provide a heavy metal species sensing chips, can be improved the sensitive of heavy metal analysis Degree, compact structure are at low cost.
To achieve the above object, the utility model provides a heavy metal species sensing chip, comprising: dielectric substrate layers, electricity Pole layer, porous graphene film layer, electrode package layer.Electrode layer is covered on the surface of the dielectric substrate layers, the electrode layer Including to electrode and being connected to described to, to contact conductor disk, the electrode layer further includes working electrode and being connected on electrode Working electrode lead wire tray on the working electrode.Described is semi-enclosed circular ring type structure to electrode, described to contact conductor Disk is extended in a first direction from the opening of the cirque structure, and the working electrode is for circular configuration and by described non-to electrode It surrounds in contact, the working electrode lead wire tray also extends in a first direction.Porous graphene film layer is circular configuration, is covered Cover the surface in the working electrode.Electrode package layer is covered on described to contact conductor disk and the working electrode lead wire tray Surface.
In a preferred embodiment, the first direction and the symmetry axis of semi-enclosed cirque structure prolong It is identical to stretch direction.
In a preferred embodiment, described to electrode, the working electrode and the porous graphene film layer The center of circle of three is on same straight line.
In a preferred embodiment, the dielectric substrate layers are chip glass, insulating ceramic film, insulation print circuit Plate or silicon wafer.
In a preferred embodiment, the material to electrode is gold or platinum.
In a preferred embodiment, the material of the working electrode is gold or platinum.
In a preferred embodiment, the material of the electrode package layer is patterned polymer.
In a preferred embodiment, the thickness to electrode and the working electrode is 100nm~10um, institute State electrode package layer with a thickness of 10um~200um.
Compared with prior art, heavy metal sensing chip according to the present utility model is due to being used as weight using porous graphene Heavy metal accumulation efficiency can be enhanced when carrying out water quality detection in metallic sensing film, improves the sensitivity of heavy metal analysis, leads to The self refresh of sensitive membrane is crossed, can be used for a long time, and the structure design of the chip is small and exquisite simple, can effectively reduce cost.
Detailed description of the invention
Fig. 1 is the decomposition texture schematic diagram according to the heavy metal sensing chip of one embodiment of the utility model;
Fig. 2 is the overall structure diagram according to the heavy metal sensing chip of one embodiment of the utility model.
Specific embodiment
With reference to the accompanying drawing, specific embodiment of the present utility model is described in detail, it is to be understood that this is practical Novel protection scope is not limited by the specific implementation.
Unless otherwise explicitly stated, otherwise in entire disclosure and claims, term " includes " or its change Changing such as "comprising" or " including " etc. will be understood to comprise stated element or component, and not exclude other members Part or other component parts.
The shortcomings that in order to overcome in the presence of existing heavy metal analysis mode, inventor propose one by further investigation The novel heavy metal analysis mode of kind, devises a heavy metal species sensing chip, using porous graphene as heavy metal sensitive Heavy metal accumulation efficiency can be enhanced when carrying out water quality detection in film, improves the sensitivity of heavy metal analysis, passes through sensitive membrane Self refresh, can be used for a long time, and devise small and exquisite structure more compact for it, which can be by micro- Mechanical processing technique preparation, small in size, can be mass, manufacturing cost is low.
Fig. 1 is according to the decomposition texture schematic diagram of the heavy metal sensing chip of one embodiment of the utility model, and Fig. 2 is this The overall structure diagram of the heavy metal sensing chip of embodiment.
The heavy metal sensing chip includes: dielectric substrate layers 10, electrode layer 11, porous graphene film layer 12, electrode envelope Fill layer 13.
Optionally, dielectric substrate layers 10 can be chip glass, insulating ceramic film, insulated printed circuit board or silicon wafer.
Electrode layer 11 is covered on the surface of dielectric substrate layers 10.Electrode layer 11 includes to electrode 11a and being connected to electrode On 11a to contact conductor disk 11b, electrode layer 11 further include working electrode 11c and be connected on working electrode 11c work electricity Pole lead wire tray 11d.Specifically, the material of electrode layer is gold or platinum, with a thickness of 100nm~10um.
It is semi-enclosed circular ring type structure to electrode 11a, to contact conductor disk 11b from the opening edge of the cirque structure First direction extends, and working electrode 11c is circular configuration and is surrounded in a non-contact manner to electrode 11a, working electrode lead wire tray 11d is also extended in a first direction.Optionally, in the present embodiment, first direction and semi-enclosed cirque structure is symmetrical The extending direction of axis is identical.
Porous graphene film layer 12 is circular configuration, is covered on the surface of working electrode 11c.
Electrode package layer 13 is covered on the surface to contact conductor disk 11b and working electrode lead wire tray 11d.Specifically, electric The material of pole encapsulated layer 13 is patterned polymer, such as the photoresist of AZ1500, SU-8 model, thickness can for 10um~ 200um。
Preferably, to the center of circle of electrode 11a, working electrode 11c and 12 three of porous graphene film layer in same On straight line.
When carrying out heavy metal analysis, which is immersed into solution to be measured, and is guaranteed to electrode Lead wire tray and working electrode lead disc electrode should not contact measured solution, using external commercial reference electrode, in Stripping Voltammetry In method, the Stripping Currents value between working electrode and reference electrode is measured, heavy metal lead, zinc, cadmium etc. are distinguished according to dissolution current potential Ion obtains the concentration values of all kinds of heavy metal ion according to the standard curve of Stripping Currents contrast standard solution.
Heavy metal sensing chip according to the present utility model by using porous graphene as heavy metal sensitive film, into When row water quality detection, heavy metal accumulation efficiency can be enhanced, to improve the sensitivity of heavy metal analysis, by sensitive membrane from It updates, can be used for a long time, and the structure design of the chip is small and exquisite simple, can effectively reduce cost.
The description of the aforementioned specific exemplary embodiment to the utility model is in order to illustrate and illustration purpose.These Description is not wishing to for the utility model to be limited to disclosed precise forms, and it will be apparent that according to the above instruction, can carry out It is many to change and change.The purpose of selecting and describing the exemplary embodiment is that explaining the specific principle of the utility model And its practical application, so that those skilled in the art can be realized and utilize a variety of different examples of the utility model Property embodiment and various chooses and changes.The scope of the utility model is intended to by claims and its waits similar shapes Formula is limited.

Claims (8)

1. a heavy metal species sensing chip characterized by comprising
Dielectric substrate layers;
Electrode layer, is covered on the surface of the dielectric substrate layers, and the electrode layer includes to electrode and being connected to described to electrode On to contact conductor disk, the electrode layer further includes working electrode and the working electrode lead that is connected on the working electrode Disk, described is semi-enclosed circular ring type structure to electrode, it is described to contact conductor disk from the opening of the cirque structure along the One direction extends, and the working electrode is circular configuration and is surrounded in a non-contact manner by described to electrode that the working electrode draws Drum also extends in a first direction;
Porous graphene film layer is circular configuration, is covered on the surface of the working electrode;And
Electrode package layer is covered on the surface to contact conductor disk and the working electrode lead wire tray.
2. heavy metal sensing chip as described in claim 1, which is characterized in that the first direction and semi-enclosed circle The extending direction of the symmetry axis of ring structure is identical.
3. heavy metal sensing chip as described in claim 1, which is characterized in that it is described to electrode, the working electrode and The center of circle of the porous graphene film layer three is on same straight line.
4. heavy metal sensing chip as described in claim 1, which is characterized in that the dielectric substrate layers are chip glass, absolutely Edge potsherd, insulated printed circuit board or silicon wafer.
5. heavy metal sensing chip as described in claim 1, which is characterized in that the material to electrode is gold or platinum.
6. heavy metal sensing chip as described in claim 1, which is characterized in that the material of the working electrode is gold or platinum.
7. heavy metal sensing chip as described in claim 1, which is characterized in that the material of the electrode package layer is patterning Polymer.
8. heavy metal sensing chip as described in claim 1, which is characterized in that the thickness to electrode and the working electrode Degree is 100nm~10um, the electrode package layer with a thickness of 10um~200um.
CN201822233918.7U 2018-12-28 2018-12-28 Heavy metal sensing chip Active CN209280628U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201822233918.7U CN209280628U (en) 2018-12-28 2018-12-28 Heavy metal sensing chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201822233918.7U CN209280628U (en) 2018-12-28 2018-12-28 Heavy metal sensing chip

Publications (1)

Publication Number Publication Date
CN209280628U true CN209280628U (en) 2019-08-20

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CN (1) CN209280628U (en)

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