CN209259996U - A kind of antistatic wafer is thinned, protective film is used in cutting - Google Patents
A kind of antistatic wafer is thinned, protective film is used in cutting Download PDFInfo
- Publication number
- CN209259996U CN209259996U CN201821316767.5U CN201821316767U CN209259996U CN 209259996 U CN209259996 U CN 209259996U CN 201821316767 U CN201821316767 U CN 201821316767U CN 209259996 U CN209259996 U CN 209259996U
- Authority
- CN
- China
- Prior art keywords
- base material
- layer
- antistatic
- material film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 16
- 238000005520 cutting process Methods 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims abstract description 20
- 239000002344 surface layer Substances 0.000 claims abstract description 8
- 238000010345 tape casting Methods 0.000 claims abstract 2
- 239000012792 core layer Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- -1 polyene Hydrocarbon Chemical class 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 14
- 239000011248 coating agent Substances 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 8
- 238000005266 casting Methods 0.000 abstract description 7
- 239000004820 Pressure-sensitive adhesive Substances 0.000 abstract description 5
- 239000012528 membrane Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000010096 film blowing Methods 0.000 abstract description 2
- 239000008187 granular material Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 229920000098 polyolefin Polymers 0.000 abstract 6
- 235000012431 wafers Nutrition 0.000 abstract 5
- 238000001125 extrusion Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- 238000012946 outsourcing Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 239000002216 antistatic agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The utility model discloses a kind of antistatic wafers to be thinned, cutting protective film; it successively include that polyolefin (PO) resists quiet base material film and glue-line; the antistatic base material film of PO is made of antistatic surface layer, sandwich layer and corona layer, is prepared by multi-layer co-extruded the tape casting.Then finished product protection film can be obtained in coating UV visbreaking pressure sensitive adhesive on PO base material film.The utility model selects suitable co-extrusion antistatic master granule, without coating, the membrane material that a kind of antistatic surface is prepared by multi-layer co-extruded mode, from avoid because removing overtension, in semiconductor crystal wafer production process, caused by breakdown wafer the case where, improve wafer processing yield.Select PO as base material film, membrane material tensile property and flexility more preferably, can satisfy the process conditions of requirements at the higher level；The thickness uniformity that casting technique prepares PO base material film is higher than the base material film of film-blowing process preparation, and the accuracy and yields of wafer processing can be improved.
Description
Technical field
The utility model relates to technical field of semiconductors, are thinned more particularly to a kind of antistatic wafer, cutting protection
Film.
Background technique
Currently, the common processing method in carrying out thinned or cutting process to semiconductor crystal wafer, is mainly subtracted using UV
The viscous fixed wafer of protective film carries out that goods cutting processing procedure is thinned, and the initial peeling force of the protective film is high, attaches wafer and carries out completion of processing
Afterwards, it is irradiated by UV, peeling force drastically reduces, and removes from protective film convenient for wafer finished product.But in process of production, due to
High-speed friction and high molecular material characteristic cause charge to be easy to be enriched on non-conductive protective film, in the wink for tearing protective film
Between will cause higher removing voltage, to there is the risk of breakdown voltage semiconductor wafer.
Its defect faced now is worth solving.
Utility model content
In view of the deficienciess of the prior art, the utility model aim is to provide, a kind of antistatic wafer is thinned, cuts and uses
Protective film.
To achieve the goals above, the utility model is achieved through the following technical solutions:
A kind of antistatic wafer of the utility model is thinned, cuts and use protective film, is made of antistatic base material film and glue-line；
Above-mentioned base material film is PO base material film, is prepared by casting machine coextrusion casting, with a thickness of 25~200 μm.
Above-mentioned base material film is made of antistatic surface layer, sandwich layer and corona layer, and 5~50 μm of skin depth, core layer thickness 20~
150 μm, 5~50 μm of corona layer thickness；
Above-mentioned antistatic surface layer, without being achieved by multi-layer co-extruded technique, table by being additionally coated with antistatic coating
Face impedance 108~1010Ω/sq；
The above-mentioned PO base material film thickness uniformity ± 3%, tensile strength > 20 Mpa, elongation at break > 700%；
Above-mentioned glue-line is that UV irradiates inharmonious pressure sensitive adhesive, with a thickness of 5~30 μm.
The utility model has the beneficial effect that:
1. by interior addition antistatic master granule, by multi-layer co-extruded mode be directly prepared a kind of surface have it is antistatic
The base material film of effect is effectively reduced the risk of removing voltage breakdown；
2. without additional coating antistatic agent, solvent contamination caused by avoiding in coating process is avoided because secondary
Membrane material pollution risk caused by coating avoids because coating antistatic coating combines risk caused by loosely falling off；
3. selecting PO as base material film, flexibility and extensibility is all superior to PP and PO substrate used at present, can
To meet the process conditions of requirements at the higher level；
4. the thickness uniformity that casting technique prepares PO base material film is higher than the base material film of film-blowing process preparation, Ke Yiti
The accuracy and yields of high wafer processing.
Detailed description of the invention
Fig. 1 is that the wafer of the utility model is thinned, cutting is used and protects membrane structure diagram；
Each label in figure: antistatic surface layer 1, sandwich layer 2, corona layer 3 and glue-line 4.
Specific embodiment
To be easy to understand the technical means, creative features, achievement of purpose, and effectiveness of the utility model, below
In conjunction with specific embodiment, the utility model is further described.
Embodiment 1:
Referring to Fig. 1, antistatic wafer is thinned, cuts and use protective film, passes through and changes antistatic surface layer formula, coextrusion casting system
It is standby to obtain surface impedance 108Ω/sq, with a thickness of the PO base material film of 50 um.
By the inharmonious pressure sensitive adhesive slit coating of the UV of outsourcing on PO substrate, dry glue coating thickness is 5 um.
Warehouse can be entered after finished product winding, it should be noted that anti-light package and storage.
Embodiment 2:
By changing anti-stick layer formula, surface impedance 10 is prepared in coextrusion casting9Ω/sq, with a thickness of the PO of 80 um
Base material film.
By the inharmonious pressure sensitive adhesive slit coating of the UV of outsourcing on PO substrate, dry glue coating thickness is 10 um.
Warehouse can be entered after finished product winding, it should be noted that anti-light package and storage.
Embodiment 3:
By changing anti-stick layer formula, surface impedance 10 is prepared in coextrusion casting10Ω/sq, with a thickness of the PO of 150 um
Base material film.
By the inharmonious pressure sensitive adhesive blade coating of the UV of outsourcing on PO substrate, dry glue coating thickness is 20 um.
Warehouse can be entered after finished product winding, it should be noted that anti-light package and storage.
The basic principles and main features of the present invention and the advantages of the present invention have been shown and described above.Current row
The technical staff of industry is described in above embodiments and description it should be appreciated that the present utility model is not limited to the above embodiments
Only illustrate the principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, the utility model is also
It will have various changes and improvements, these various changes and improvements fall within the scope of the claimed invention.The utility model
Claimed range is defined by the appending claims and its equivalent thereof.
Claims (5)
- It successively include antistatic surface layer (1), sandwich layer (2), corona layer (3) and glue-line 1. a kind of wafer is thinned, cutting protective film (4) it constitutes, which is characterized in that antistatic surface layer, sandwich layer and corona layer, three layers of composition base material film, and the base material film is by polyene Hydrocarbon (PO) particle is prepared by multi-layer co-extruded the tape casting.
- 2. wafer according to claim 1 is thinned, cutting protective film, which is characterized in that antistatic surface layer has antistatic Effect, surface impedance 108~1010Ω/sq, with a thickness of 5~50 μm.
- 3. wafer according to claim 1 is thinned, cutting protective film, which is characterized in that core layer thickness is 20~120 μ m。
- 4. wafer according to claim 1 is thinned, cutting protective film, which is characterized in that corona layer is with a thickness of 5~50 μ m。
- 5. wafer according to claim 1 is thinned, cutting protective film, which is characterized in that bondline thickness is 5~30 μ m。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821316767.5U CN209259996U (en) | 2018-08-15 | 2018-08-15 | A kind of antistatic wafer is thinned, protective film is used in cutting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821316767.5U CN209259996U (en) | 2018-08-15 | 2018-08-15 | A kind of antistatic wafer is thinned, protective film is used in cutting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209259996U true CN209259996U (en) | 2019-08-16 |
Family
ID=67557679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821316767.5U Expired - Fee Related CN209259996U (en) | 2018-08-15 | 2018-08-15 | A kind of antistatic wafer is thinned, protective film is used in cutting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209259996U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110699000A (en) * | 2019-10-11 | 2020-01-17 | 上海固柯胶带科技有限公司 | Film material for grinding and packaging semiconductor |
-
2018
- 2018-08-15 CN CN201821316767.5U patent/CN209259996U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110699000A (en) * | 2019-10-11 | 2020-01-17 | 上海固柯胶带科技有限公司 | Film material for grinding and packaging semiconductor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190816 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |