CN209238601U - Electrostatic precipitator applied to cmos image sensor test machine - Google Patents
Electrostatic precipitator applied to cmos image sensor test machine Download PDFInfo
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- CN209238601U CN209238601U CN201822121098.2U CN201822121098U CN209238601U CN 209238601 U CN209238601 U CN 209238601U CN 201822121098 U CN201822121098 U CN 201822121098U CN 209238601 U CN209238601 U CN 209238601U
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- image sensor
- cmos image
- test machine
- dust
- electrostatic precipitator
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Abstract
The utility model discloses a kind of electrostatic precipitators applied to cmos image sensor test machine, it is related to imaging sensor test machine equipment technical field, including the testing stand for placing cmos image sensor, the ion generator for generating negative ions, the plasma diffusing W,Mo device for discharging negative ions and the power device for blowing out negative ions from plasma diffusing W,Mo device;Plasma diffusing W,Mo device is located at the top of testing stand;Cavity is provided in plasma diffusing W,Mo device;Plasma diffusing W,Mo device is provided with several relief holes close to the side of testing stand;Cavity is connected to ion generator, power device, several relief holes.Electrostatic precipitator provided by the utility model applied to cmos image sensor test machine, charge, foreign matter and dust on cmos image sensor can be cleaned up, so that the test result of cmos image sensor test machine is more acurrate, test result and cmos image sensor itself performance are with uniformity.
Description
Technical field
The utility model relates to imaging sensor test machine equipment technical fields, more particularly to one kind to be applied to cmos image
The electrostatic precipitator of sensor test machine.
Background technique
Cmos image sensor is a kind of typical solid state image sensor, has common historical origin with CCD.CMOS
Imaging sensor is usually by image-sensitive cell array, line driver, row driver, time sequence control logic, converter, data/address bus
A few part compositions such as output interface, control interface, this several part is usually all integrated on same silicon wafer.Its course of work one
As can be divided into reset, photoelectric conversion, integral, read several parts.
Cmos image sensor has random window reading capability, capability of resistance to radiation, system complexity and reliability, non-
Destructive data playback mode, optimization the advantages such as spectrum assignment, in view of the relatively superior performance of cmos image sensor so that
Cmos image sensor is widely used in computer camera, digital camera, PDA and mobile phone, toy and backing system, safety prison
In the fields such as control, videophone and Fingerprint Identification Unit.
It is whether qualified in order to detect the cmos image sensor produced in cmos image sensor production process, it needs
Cmos image sensor is tested.The test machine of cmos image sensor is usually CIS test machine.But it is inciting somebody to action
During cmos image sensor is transported to test machine, the glass edge of cmos image sensor can be collided mutually and be generated broken
Glass grain, cullet grain can be attached to the glass surface of cmos image sensor, thus will affect cmos image sensor
Test result.
Utility model content
In view of the above problems, the utility model provides a kind of electrostatic applied to cmos image sensor test machine
Dust-extraction unit influences test result to solve to be attached to the cullet grain of cmos image sensor glass surface in the prior art
Problem, so that the test result of cmos image sensor test machine is more acurrate, test result and cmos image sensor itself property
It can be with uniformity.
To achieve the above object, technical solution provided by the utility model are as follows:
Electrostatic precipitator provided by the utility model applied to cmos image sensor test machine, including for placing
The testing stand of cmos image sensor, the ion generator for generating negative ions, the ion for discharging negative ions
Release device and power device for blowing out negative ions from the plasma diffusing W,Mo device;Plasma diffusing W,Mo device position
In the top of the testing stand;Cavity is provided in the plasma diffusing W,Mo device;The plasma diffusing W,Mo device is close to the survey
The side in test stand face is provided with several relief holes;The cavity and the ion generator, several described are released the power device
Discharge hole connection.
Electrostatic precipitator provided by the utility model applied to cmos image sensor test machine, it is preferable that described
Plasma diffusing W,Mo device further includes plate body;The plate face of the plate body is parallel with the testing stand;It is provided in the plate body described
Cavity;The plate body is provided with several relief holes in the plate face of the testing stand.
Electrostatic precipitator provided by the utility model applied to cmos image sensor test machine, it is preferable that described
The left end of plasma diffusing W,Mo device is connected to the power device, and right end is connected to the ion generator.
Electrostatic precipitator provided by the utility model applied to cmos image sensor test machine, it is preferable that several
The relief hole is uniformly arranged in the plate face.
Electrostatic precipitator provided by the utility model applied to cmos image sensor test machine, it is preferable that also wrap
Include cabinet, dust hopper, dust delivering tube, blower and dust storage device;The testing stand and the plasma diffusing W,Mo device are located at the case
The inside of body;There are gaps between the outer edge of the testing stand and the side wall of the cabinet;The lower box opening;It is described
The lower part of cabinet is communicated with the dust hopper;The dust hopper is funnel-shaped;One end of the dust delivering tube and the dust hopper connect
Logical, the other end is connected to the input terminal of the blower;The output end of the blower is connected to the dust storage device.
Electrostatic precipitator provided by the utility model applied to cmos image sensor test machine, it is preferable that described
It is provided on the lateral wall of dust hopper for vibrating the rapping apparatus for hitting the dust hopper lateral wall.
Electrostatic precipitator provided by the utility model applied to cmos image sensor test machine, it is preferable that described
At least one bending part is provided on dust delivering tube.
Electrostatic precipitator provided by the utility model applied to cmos image sensor test machine, it is preferable that described
Cabinet includes for cmos image sensor to be placed in the intracorporal import of the case;The import is provided with for separating the case
The inner space of body and the air curtain of exterior space.
The technical scheme has the following advantages or beneficial effects:
Electrostatic precipitator provided by the utility model applied to cmos image sensor test machine, power device will just
Anion is blown out from plasma diffusing W,Mo device, on the one hand, negative ions are by the charging neutrality of cmos image sensor surface institute band
Fall, achievees the purpose that remove cmos image sensor surface electrostatic;On the other hand, the air-flow of blowout can clear up cmos image simultaneously
The foreign matter and dust of sensor surface;Therefore the broken glass for being attached to cmos image sensor glass surface in the prior art can be solved
Glass grain influences the problem of test result so that the test result of cmos image sensor test machine is more acurrate, test result with
Cmos image sensor performance itself is with uniformity.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, the utility model and its spy
Sign, shape and advantage will become more apparent.Identical label indicates identical part in all the attached drawings.Do not press deliberately
Attached drawing is drawn according to ratio, it is preferred that emphasis is the purport of the utility model is shown.
Fig. 1 is the electrostatic precipitator applied to cmos image sensor test machine that the utility model embodiment 1 provides
Structural schematic diagram.
Specific embodiment
Below with reference to the attached drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out clear
Chu, complete explanation, it is clear that described embodiment is only a part of the embodiment of the utility model, rather than whole realities
Apply example.Therefore, the detailed description in the utility model embodiment provided in attached drawing is not intended to limit below claimed
The scope of the utility model, but be merely representative of the selected embodiment of the utility model.Based on the embodiments of the present invention,
Those skilled in the art's every other embodiment obtained without creative labor belongs to practical
Novel protection scope.
Embodiment 1:
As shown in Figure 1, the electrostatic precipitation applied to cmos image sensor test machine that the utility model embodiment 1 provides
Device including the testing stand 1 for placing cmos image sensor, the ion generator 2 for generating negative ions, is used for
Discharge the plasma diffusing W,Mo device 3 of negative ions and the power device 4 for blowing out negative ions from plasma diffusing W,Mo device 3;
Plasma diffusing W,Mo device 3 is located at the top of testing stand 1;Cavity 31 is provided in plasma diffusing W,Mo device 3;Plasma diffusing W,Mo device 3 leans on
The side of nearly testing stand 1 is provided with several relief holes 32;Cavity 31 and ion generator 2, power device 4, several relief holes
32 connections.
Specifically, power device 4 is air compressor machine 4.The right end and ion generator 2 of plasma diffusing W,Mo device 3 are electrically connected, left
End is connected to by tracheae with air compressor machine 4.Belong to the prior art it should be noted that being electrically connected, to those skilled in the art
Speech be it is specific, clear, it will not be described here.
The electrostatic precipitator applied to cmos image sensor test machine that the utility model embodiment 1 provides, ion
Generator 2 generates negative ions and enters plasma diffusing W,Mo device 3;Power device 4 blows negative ions from plasma diffusing W,Mo device 3
Out;On the one hand, when it is negative electrical charge that cmos image sensor surface institute is electrically charged, attract the positive charge in air-flow;When CMOS schemes
As sensor surface institute it is electrically charged be positive charge when, attract air-flow in negative electrical charge;Negative ions will be on cmos image sensor
The charging neutrality of institute's band is fallen, and achievees the purpose that remove cmos image sensor surface electrostatic;On the other hand, the air-flow of blowout can be same
The foreign matter and dust on Shi Qingli cmos image sensor surface;Therefore it can solve to be attached to cmos image sensor in the prior art
The problem of cullet grain test result of glass surface, surveys so that the test result of cmos image sensor test machine is more acurrate
Test result and cmos image sensor itself performance are with uniformity.
Preferably, plasma diffusing W,Mo device 3 further includes plate body 33;The plate face 331 of plate body 33 is parallel with testing stand 1;Plate body
Above-mentioned cavity 31 is provided in 33;Plate body 33 is provided with several above-mentioned relief holes 32 in the plate face 331 of testing stand 1.
Specifically, it is provided on testing stand 1 several for placing the notch portion 11 of cmos image sensor, a recess
A cmos image sensor is placed in portion 11;Be provided on plate body 33 several relief holes 32 plate face 331 cover it is several recessed
Oral area 11.
By setting plate body structure for plasma diffusing W,Mo device 3, it is possible to increase the release area of negative ions, increase it is positive and negative from
The sphere of action of son;Negative ions are improved to the neutralization efficiency of charge on cmos image sensor;It is clear to increase plasma diffusing W,Mo device
Except cmos image sensor Superficial Foreign Body and effective removing area of dust;Therefore the operation cost of enterprise can be saved.
Preferably, several relief holes 32 are uniformly arranged in plate face 331.
By the way that several relief holes are uniformly arranged in plate face, the uniform of plasma diffusing W,Mo device release negative ions is improved
Degree increases the effective active area of plasma diffusing W,Mo device;Negative ions are improved to imitate the neutralization of charge on cmos image sensor
Rate;Guarantee negative ions and air-flow to the cleaning effect of the charge on cmos image sensor surface, foreign matter and dust.
It preferably, further include cabinet 5, dust hopper 6, dust delivering tube 7, blower 8 and dust storage device 9;Testing stand 1 and ion are released
Put the inside that device 3 is located at cabinet 5;There are gaps between the outer edge of testing stand 1 and the side wall of cabinet 5;It opens 5 lower part of cabinet
Mouthful;The lower part of cabinet 5 is communicated with dust hopper 6;Dust hopper 6 is funnel-shaped;One end of dust delivering tube 7 is connected to dust hopper 6, the other end
It is connected to the input terminal of blower 8;The output end of blower 8 is connected to dust storage device 9.Specifically, blower 8 is turbofan 8;Chu Chen
Device 9 is storage dirt bag 9;Ion generator 2 and power device 4 are located at the outside of cabinet.It should be noted that cabinet 5 and dust
Connection, blower 8 and the dust storage device of connection, dust hopper 6 between bucket 6 and the connection between dust delivering tube 7, dust delivering tube 7 and blower 8
9 connection belongs to the prior art, be to those skilled in the art it is specific, clear, it will not be described here.
First, by the way that dust hopper 6 funnel-shaped is arranged, the inclined surface of dust hopper 6 can be foreign matter and dust out of cabinet 5
Transition face is provided into dust delivering tube 7, so that foreign matter and dust easily enter in dust delivering tube 7, improves dust hopper 6 to foreign matter and dust
Collection and transfer efficiency.Second, by the way that ion generator 2 and power device 4 to be set to the outside of cabinet 5, can reduce from
Electronic generator 2 and the influence to electrostatic precipitation process in the process of running of power device 4 optimize the electrostatic precipitation ring in cabinet 5
Border guarantees the effect of electrostatic precipitation.Third, by setting dust hopper 6, dust delivering tube 7, blower 8 and dust storage device 9, can in time by
Foreign matter and dust in cabinet 5 are removed, and are prevented the foreign matter removed and dust from causing secondary pollution to cmos image sensor, are kept away
Exempt from foreign matter and dust be present in cabinet 5 influences cmos image sensor test machine to the test effect of cmos image sensor,
Guarantee that the environment in cabinet 5 meets the test request of cmos image sensor test machine.
Preferably, the rapping apparatus 10 for vibrating strike 6 lateral wall of dust hopper is provided on the lateral wall of dust hopper 6.
Specifically, rapping apparatus 10 is vibrator 10.
By the way that rapping apparatus 10 is arranged on the lateral wall of dust hopper 6, since rapping apparatus 10 can drive the side of dust hopper 6
Wall vibrations, therefore can avoid foreign matter and dust and assemble on the lateral wall of dust hopper 6, effectively overcome between foreign matter and dust in rub
Power and aggregation force are wiped, the unimpeded of dust hopper 6 is kept.
Preferably, at least one bending part 71 is provided on dust delivering tube 7.Specifically, a bending is provided on dust delivering tube 7
Portion 71, the angle of bending part 71 are 90 °.
By the way that at least one bending part 71 is arranged on dust delivering tube 7, the presence of bending part 71 can inhibit foreign matter and dust is special
It is not that floating dust substance passes back into cabinet 5 from dust delivering tube 7, influences cmos image sensor test machine to cmos image sensor
Test effect, guarantee to the cleaning effect of foreign matter and dust.
Preferably, cabinet 5 includes the import 51 for being placed in cmos image sensor in cabinet 5;Import 51 is provided with
For separating the inner space of cabinet 5 and the air curtain of exterior space.
Inner space and the exterior space of cabinet 5 can be completely cut off by the way that air curtain is arranged;On the one hand it can prevent in cabinet 5 clear
During managing cmos image sensor Superficial Foreign Body and dust, foreign matter and dust are dirty in external space from entering in cabinet 5
Contaminate environment;On the other hand, can prevent foreign matter and dust in exterior space from entering in the inner space of cabinet 5 influences cmos image
Sensor test machine guarantees the stabilization of cmos image sensor test machine working environment to the test effect of cmos image sensor
Property, so that the test result of cmos image sensor test machine is more acurrate, test result and cmos image sensor itself performance
It is with uniformity.
The electrostatic precipitator applied to cmos image sensor test machine provided using the utility model embodiment 1,
Cmos image sensor is placed on testing stand 1 by air curtain;Ion generator 2 generate negative ions, generation it is positive and negative
Ion enters plasma diffusing W,Mo device 3, and power device 4 blows out negative ions from plasma diffusing W,Mo device 3;When cmos image senses
Device surface institute it is electrically charged be negative electrical charge when, attract air-flow in positive charge;It is positive when cmos image sensor surface institute is electrically charged
When charge, attract the negative electrical charge in air-flow;The charging neutrality of institute's band on cmos image sensor is fallen;The negative ions gas of blowout
Stream while the foreign matter and dust for clearing up cmos image sensor surface;The foreign matter and dust cleared up in cabinet 5 by dust hopper 6 into
Enter in dust delivering tube 7, and the blower 8 by being connected to dust delivering tube 7 is conveyed into dust storage device 9.
In conclusion the electrostatic precipitator provided by the utility model applied to cmos image sensor test machine, from
Electronic generator generates negative ions and enters plasma diffusing W,Mo device;Power device blows out negative ions from plasma diffusing W,Mo device;
On the one hand, when it is negative electrical charge that cmos image sensor surface institute is electrically charged, attract the positive charge in air-flow;When cmos image passes
Sensor surfaces institute it is electrically charged be positive charge when, attract air-flow in negative electrical charge;Negative ions are by institute's band on cmos image sensor
Charging neutrality fall, achieve the purpose that remove cmos image sensor surface electrostatic;On the other hand, the air-flow of blowout can be clear simultaneously
Manage the foreign matter and dust on cmos image sensor surface;Therefore it can solve to be attached to cmos image sensor glass in the prior art
The problem of cullet grain test result on surface, so that the test result of cmos image sensor test machine is more acurrate, test knot
Fruit and cmos image sensor itself performance are with uniformity.
It should be appreciated by those skilled in the art that those skilled in the art combine the prior art and above-described embodiment can be real
The existing change case, it will not be described here.Such change case has no effect on the substantive content of the utility model, not superfluous herein
It states.
The preferred embodiment of the utility model is described above.It is to be appreciated that the utility model not office
It is limited to above-mentioned particular implementation, devices and structures not described in detail herein should be understood as with the common side in this field
Formula is practiced;Anyone skilled in the art, do not depart from technical solutions of the utility model make it is many possible
Changes and modifications or equivalent example modified to equivalent change, this has no effect on the substantive content of the utility model.Therefore,
All contents without departing from technical solutions of the utility model, it is made to the above embodiment according to the technical essence of the utility model
Any simple modifications, equivalents, and modifications, still fall within technical solutions of the utility model protection in the range of.
Claims (8)
1. a kind of electrostatic precipitator applied to cmos image sensor test machine, which is characterized in that including for placing
The testing stand of cmos image sensor, the ion generator for generating negative ions, the ion for discharging negative ions
Release device and power device for blowing out negative ions from the plasma diffusing W,Mo device;Plasma diffusing W,Mo device position
In the top of the testing stand;Cavity is provided in the plasma diffusing W,Mo device;The plasma diffusing W,Mo device is close to the survey
The side in test stand face is provided with several relief holes;The cavity and the ion generator, several described are released the power device
Discharge hole connection.
2. being applied to the electrostatic precipitator of cmos image sensor test machine as described in claim 1, which is characterized in that institute
Stating plasma diffusing W,Mo device further includes plate body;The plate face of the plate body is parallel with the testing stand;It is arranged in the plate body
State cavity;The plate body is provided with several relief holes in the plate face of the testing stand.
3. being applied to the electrostatic precipitator of cmos image sensor test machine as described in claim 1, which is characterized in that institute
The left end for stating plasma diffusing W,Mo device is connected to the power device, and right end is connected to the ion generator.
4. being applied to the electrostatic precipitator of cmos image sensor test machine as claimed in claim 2, which is characterized in that if
The relief hole is done to be uniformly arranged in the plate face.
5. being applied to the electrostatic precipitator of cmos image sensor test machine as described in claim 1, which is characterized in that also
Including cabinet, dust hopper, dust delivering tube, blower and dust storage device;The testing stand and the plasma diffusing W,Mo device are located at described
The inside of cabinet;There are gaps between the outer edge of the testing stand and the side wall of the cabinet;The lower box opening;Institute
The lower part for stating cabinet is communicated with the dust hopper;The dust hopper is funnel-shaped;One end of the dust delivering tube and the dust hopper
Connection, the other end are connected to the input terminal of the blower;The output end of the blower is connected to the dust storage device.
6. being applied to the electrostatic precipitator of cmos image sensor test machine as claimed in claim 5, which is characterized in that institute
It states and is provided on the lateral wall of dust hopper for vibrating the rapping apparatus for hitting the dust hopper lateral wall.
7. being applied to the electrostatic precipitator of cmos image sensor test machine as claimed in claim 5, which is characterized in that institute
It states and is provided at least one bending part on dust delivering tube.
8. being applied to the electrostatic precipitator of cmos image sensor test machine as claimed in claim 5, which is characterized in that institute
Stating cabinet includes for cmos image sensor to be placed in the intracorporal import of the case;The import is provided with described for separating
The inner space of cabinet and the air curtain of exterior space.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201822121098.2U CN209238601U (en) | 2018-12-18 | 2018-12-18 | Electrostatic precipitator applied to cmos image sensor test machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201822121098.2U CN209238601U (en) | 2018-12-18 | 2018-12-18 | Electrostatic precipitator applied to cmos image sensor test machine |
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Publication Number | Publication Date |
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CN209238601U true CN209238601U (en) | 2019-08-13 |
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CN201822121098.2U Active CN209238601U (en) | 2018-12-18 | 2018-12-18 | Electrostatic precipitator applied to cmos image sensor test machine |
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2018
- 2018-12-18 CN CN201822121098.2U patent/CN209238601U/en active Active
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CP02 | Change in the address of a patent holder |
Address after: 214000 No.2 Yanggong Road, Liangxi District, Wuxi City, Jiangsu Province Patentee after: JACAL ELECTRONIC (WUXI) Co.,Ltd. Address before: No. 10, Lianhe Road, North District, Hudai Industrial Park, Binhu District, Wuxi City, Jiangsu Province (3rd floor, building a, Hudai Industrial Park, Liyuan Development Zone) Patentee before: JACAL ELECTRONIC (WUXI) Co.,Ltd. |
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CP02 | Change in the address of a patent holder |