CN209119793U - Overcurrent short-circuit protection circuit and electronic equipment - Google Patents
Overcurrent short-circuit protection circuit and electronic equipment Download PDFInfo
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- CN209119793U CN209119793U CN201822144518.9U CN201822144518U CN209119793U CN 209119793 U CN209119793 U CN 209119793U CN 201822144518 U CN201822144518 U CN 201822144518U CN 209119793 U CN209119793 U CN 209119793U
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Abstract
The embodiment of the application discloses overcurrent short-circuit protection circuit and electronic equipment includes: the output end of the control unit is connected with the control end of the switch unit; the first end of the switch unit is connected with the live wire input end, the second end of the switch unit is connected with the live wire output end, and the third end of the switch unit is grounded through the resistor unit; the first end of the voltage division unit is connected with the third end of the switch unit, and the second end of the voltage division unit is connected with the first input end of the comparison unit; the second input end of the comparison unit is connected with the reference voltage, and the output end of the comparison unit is connected with the input end of the control unit. The control unit is used for controlling the switch unit to be switched on and also used for controlling the switch unit to be switched off according to the short-circuit signal; the voltage division unit is used for obtaining actual voltage according to the voltage of the third end of the switch unit when the switch unit is switched on; the comparison unit is used for outputting a short-circuit signal to the control unit when the actual voltage is lower than the reference voltage. The scheme for reasonably protecting the switching device is provided when the circuit is in overcurrent.
Description
Technical field
The invention relates to field of circuit technology more particularly to a kind of short circuit over-current protection circuits and electronic equipment.
Background technique
In circuit, switch is a kind of electronics that can make open circuit, make current interruptions or it is made to flow to other circuits
Element.Currently, field-effect tube is widely used in each circuit as a kind of AC-DC switch element.Wherein, field-effect tube
Referred to as metal-oxide-semiconductor has many advantages, such as that no mechanical loss, switching frequency are high, switch without spark phenomenon.However, metal-oxide-semiconductor lacks moment
Overload capacity when there is load abnormal or installation personnel wiring error situations such as and when causing short circuit, can make metal-oxide-semiconductor electric
Flow through electric current thermal breakdown that is big and then leading to metal-oxide-semiconductor.
In the prior art, in order to protect metal-oxide-semiconductor, following proposal is generallyd use: scheme one, in metal-oxide-semiconductor circuit input front end
Increase fuse；Scheme two increases posive temperature coefficient thermistor；Scheme three protects chip using special metal-oxide-semiconductor.However,
In scheme one, since fuse has irrecoverability, when fuse damage, depot repair is needed, so that repairing
Journey is excessively cumbersome；In scheme two, according to posive temperature coefficient thermistor characteristic, under rated current, positive temperature coefficient temperature-sensitive electricity
Resistance keeps a lesser resistance value, when short circuit occurs for circuit, and current value is made to be more than rated current, positive temperature coefficient temperature-sensitive electricity
It hinders resistance value to increase so that current value restores normal, after current value restores normal, posive temperature coefficient thermistor restores normal, so
And therefore a posive temperature coefficient thermistor equivalent load in circuit during protection, can make circuit enter and connect
In the recurrent state that on-off is opened-connected, the service life of metal-oxide-semiconductor is damaged；In scheme three, metal-oxide-semiconductor protects chip operation complicated, cost
High and occupied space is more, is unfavorable for being widely applied.To sum up, when circuit crosses flow short-circuit, how Reasonable Protection switching device becomes
A urgent problem needed to be solved.
Utility model content
This application provides a kind of short circuit over-current protection circuit and electronic equipments, rationally to protect when circuit crosses flow short-circuit
Protect switching device.
In a first aspect, the embodiment of the present application provides a kind of short circuit over-current protection circuit, comprising: switch unit, control are single
Member, partial pressure unit and comparing unit；
The output end of described control unit is connected with the control terminal of the switch unit, and the first end of the switch unit connects
It starts to exchange fire line input terminal, the second end of the switch unit connects fire wire output end, and the third end of the switch unit passes through resistance
Unit ground connection；
The first end of the partial pressure unit is connected with the third end of the switch unit, the second end of the partial pressure unit with
The first input end of the comparing unit is connected；
Second input terminal of the comparing unit accesses reference voltage, and the output end of the comparing unit and the control are single
The input terminal of member is connected；
Described control unit is used to send Continuity signal to the switch unit, so that the switching means conductive；It is described
Control unit is also used to send cut-off signal to the switch unit according to short-circuit signal, so that the switch unit disconnects；Institute
The voltage that partial pressure unit is stated for the third end in the switching means conductive according to the switch unit obtains virtual voltage；
The comparing unit is used for when the virtual voltage is lower than the reference voltage to the described control unit output short circuit letter
Number.
Further, the switch unit includes the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, the output end packet of described control unit
The first sub- output end and the second sub- output end are included, the first end of the partial pressure unit includes the first sub- input terminal and the second son input
End, the resistance unit includes first resistor and second resistance；
The drain electrode of first metal-oxide-semiconductor connects firewire input terminal, and the grid of first metal-oxide-semiconductor and first son export
End is connected, and the source electrode of first metal-oxide-semiconductor is connected with the described first sub- input terminal, and the source electrode of first metal-oxide-semiconductor passes through institute
State first resistor ground connection；
The drain electrode of second metal-oxide-semiconductor connects fire wire output end, and the grid of second metal-oxide-semiconductor and second son export
End is connected, and the source electrode of second metal-oxide-semiconductor is connected with the described second sub- input terminal, and the source electrode of second metal-oxide-semiconductor passes through institute
State second resistance ground connection.
Further, the grid of first metal-oxide-semiconductor is also grounded by 3rd resistor, and the grid of second metal-oxide-semiconductor is also
Pass through the 4th resistance eutral grounding.
Further, the partial pressure unit includes: first diode, the second diode, first capacitor, the 5th resistance,
Six resistance and zener diode；
The first diode anode be connected with the source electrode of first metal-oxide-semiconductor, the cathode of the first diode and
The first end of 5th resistance is connected；
Second diode anode be connected with the source electrode of second metal-oxide-semiconductor, the cathode of second diode and
The first end of 5th resistance is connected；
The second end of 5th resistance respectively with the first input end of the comparing unit, the 6th resistance first end,
The first end of first capacitor and the cathode of zener diode are connected；
Second end, the second end of the first capacitor and the positive of the zener diode of 6th resistance connect
Ground.
Further, further includes: the first metal-oxide-semiconductor control unit and the second metal-oxide-semiconductor control unit；
The first sub- output end is connected with the grid of first metal-oxide-semiconductor by the first metal-oxide-semiconductor control unit；
The second sub- output end is connected with the grid of second metal-oxide-semiconductor by the second metal-oxide-semiconductor control unit.
Further, the first metal-oxide-semiconductor control unit includes: the first coupler, the 7th resistance and the 8th resistance；
The first end of first coupler is connected with the first sub- output end of described control unit, first coupler
Second end by the 7th resistance eutral grounding, the third end of first coupler is connected with the grid of first metal-oxide-semiconductor,
4th end of first coupler is connected by the 8th resistance with the first power supply.
Further, the second metal-oxide-semiconductor control unit includes: the second coupler, the 9th resistance and the tenth resistance；
The first end of second coupler is connected with the second sub- output end of described control unit, second coupler
Second end by the 9th resistance eutral grounding, the third end of second coupler is connected with the grid of second metal-oxide-semiconductor,
4th end of second coupler is connected by the tenth resistance with second source.
Further, described control unit and the comparing unit are integrated in same control chip；
The output end of the comparing unit and the input terminal of described control unit are the internal port of the control chip.
Further, further includes: reference circuit；
The first end of the reference circuit is connected with the second input terminal of the comparing unit, and the second of the reference circuit
End is connected with third power supply, and the reference circuit is for generating reference voltage.
Second aspect, the embodiment of the present application also provides a kind of electronic equipment, which includes described in first aspect
Short circuit over-current protection circuit.
Above-mentioned short circuit over-current protection circuit and electronic equipment, by configuration switch unit, control unit, partial pressure unit and
Comparing unit, and be connected by control unit control switch unit, and in switching means conductive, current electricity is obtained by partial pressure unit
The virtual voltage on road when comparing unit confirms that virtual voltage is less than reference voltage, sends short-circuit signal to control unit later,
So that the technical solution that control unit controls switch unit, it can be when circuit crosses flow short-circuit, Reasonable Protection switching device.
Compared with prior art, the technical program circuit structure is simple, at low cost, it is easy to accomplish, and being capable of protective efficient switch device.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of short circuit over-current protection circuit provided by the embodiments of the present application；
Fig. 2 is the structural schematic diagram of another short circuit over-current protection circuit provided by the embodiments of the present application；
Fig. 3 is the structural schematic diagram of another short circuit over-current protection circuit provided by the embodiments of the present application.
Specific embodiment
The application is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is for explaining the application, rather than the restriction to the application.It also should be noted that for the ease of retouching
It states, part relevant to the application is illustrated only in attached drawing rather than entire infrastructure.
Fig. 1 is a kind of structural schematic diagram of short circuit over-current protection circuit provided by the embodiments of the present application.This crosses flow short-circuit guarantor
Protection circuit is integrated in the electronic device.Specifically, the short circuit over-current protection circuit includes: switch unit 11, control with reference to Fig. 1
Unit 12, partial pressure unit 13 and comparing unit 14.
The output end of described control unit 12 is connected with the control terminal of the switch unit 11, and the of the switch unit 11
One end connects firewire input terminal L-IN, and the second end of the switch unit 11 connects fire wire output end L-OUT, the switch unit
11 third end is grounded by resistance unit 15；
The first end of the partial pressure unit 13 is connected with the third end of the switch unit 11, and the of the partial pressure unit 13
Two ends are connected with the first input end of the comparing unit 14；
Second input terminal of the comparing unit 14 accesses reference voltage, the output end of the comparing unit 14 and the control
The input terminal of unit 12 processed is connected；
Described control unit 12 is used to send Continuity signal to the switch unit 11, so that the switch unit 11 is led
It is logical；Described control unit 12 is also used to send cut-off signal to the switch unit 11 according to short-circuit signal, so that the switch
Unit 11 disconnects；The partial pressure unit 13 is used for the third end in the switch unit 11 conducting according to the switch unit 11
Voltage obtain virtual voltage；The comparing unit 14 is used for when the virtual voltage is lower than the reference voltage to the control
Unit 12 processed exports the short-circuit signal.
Specifically, switch unit 11 includes at least one switch element, the open circuit when switch element all turns on is opened
Circuit disconnects when pass element is all off.In embodiment, configuration switch element is metal-oxide-semiconductor, wherein the concrete type of metal-oxide-semiconductor can
To be set according to actual conditions.Further, the output end of the control terminal with control unit 12 of switch unit 11 is connected.Wherein,
Control unit 12 sends control signal to switch unit 11 by output end, to be connected by control Signal-controlled switch unit 11
Or it disconnects.Further, control signal includes Continuity signal and cut-off signal.Continuity signal is led for control switch unit 11
Logical, cut-off signal is disconnected for control switch unit 11.It should be noted that when in switch unit 11 there are when multiple metal-oxide-semiconductors,
The grid of each metal-oxide-semiconductor is used as the control terminal of Switching Power Supply 11.At this point, there are multiple control terminals for switch unit 11.Correspondingly,
The output end of control unit 12 includes multiple subports, and each subport corresponds to a control terminal.At this point, control unit 12 can
To realize being uniformly controlled or individually controlling to metal-oxide-semiconductor.
Further, the second end connection of the first end connection firewire input terminal L-IN, switch unit 11 of switch unit 11
Fire wire output end L-OUT is electrically connected with the electronic equipment where realizing short circuit over-current protection circuit by switch unit 11 with city.
The third end of switch unit 11 is grounded by resistance unit 15 and the first end at the third end of switch unit 11 and partial pressure unit 13
It is connected.Wherein, short circuit over-current protection circuit can also include resistance unit 15, and resistance unit 15 includes at least one resistance.When
There are when multiple third ends in switch unit 11, there is at least one corresponding resistance in each third end, and pass through at least one
A resistance eutral grounding.Meanwhile the first end of partial pressure unit 13 includes multiple subports, and each subport corresponds in switch unit 11
One third end.Typically, by the partial pressure of resistance unit 15, the third end of the available switch unit 11 of partial pressure unit 13
Voltage.At this point, resistance unit 15 is it can be appreciated that sampling resistor can make partial pressure unit 13 by setting resistance unit 15
Sample the electric current exported after switch unit 11 is connected.Specifically, partial pressure unit 13 is made of diode and bleeder circuit, tool
The circuit structure of body may be set according to actual conditions, and the electric current that partial pressure unit 13 is used to export after switch unit 11 is connected leads to
It crosses bleeder circuit to be divided, and then converts the current into voltage signal.In general, the anode of diode is as partial pressure unit 13
First end.Further, the second end of partial pressure unit 13 is connected with the first input end of comparing unit 14.At this point, by partial pressure
Virtual voltage is denoted as to the voltage signal that comparing unit 14 exports after the processing of unit 13.
Typically, comparing unit 14 is the module with comparing function, can be real by independent transport and placing device or comparator
It is existing, it also can integrate in the control chip with comparing function.Further, the second input terminal of comparing unit 14 accesses ginseng
Examine voltage, wherein reference voltage can be understood as the minimum voltage that comparing unit 14 is input to when short circuit.Comparing unit 14
Output end be connected with the input terminal of control unit 12.When comparing unit 14 determines that virtual voltage is less than reference voltage, to control
12 output short-circuit signal of unit processed.Wherein, short-circuit signal can be high level signal or low level signal.It is height with short-circuit signal
For level signal, when comparing unit 14 determines that virtual voltage is not less than reference voltage, low level is exported to control unit 12
Signal, at this point, control unit 12 determines that short circuit does not occur for circuit.When comparing unit 14 determines that virtual voltage is less than reference voltage
When, high level signal is exported to control unit 12, at this point, control unit 12 determines that short circuit occurs for circuit.
Further, control unit 12 include but is not limited to single-chip microcontroller, dsp chip, microprocessor and other have
The control chip of signal processing and control function in embodiment, is described so that control unit 12 is control chip as an example.Specifically
, the specific rules embodiment that control unit 12 generates control signal is not construed as limiting.For example, control unit 12 detects starting letter
Number when, to switch unit 11 send Continuity signal, wherein enabling signal can be issued by user, can also be by control unit 12
Voluntarily issue.For another example, when control unit 12 detects short-circuit signal, cut-off signal is sent to switch unit 11.
The working method of short circuit over-current protection circuit is illustrated below.Specifically, control unit 12 receives
To user issue enabling signal when, to switch unit 11 send Continuity signal, switch unit 11 receives close Continuity signal after,
Control internal switch element closure, circuit conducting.Later, partial pressure unit 13 acquires the of switch unit 11 using resistance unit 15
The electric current at three ends simultaneously obtains virtual voltage.Later, virtual voltage is input to comparing unit 14 by partial pressure unit 13.Comparing unit 14
Virtual voltage is compared with reference voltage, if determining that virtual voltage is less than reference voltage according to comparison result, is compared
Unit 14 sends short-circuit signal to control unit 12.After control unit 12 receives short-circuit signal, sent to switch unit 11 disconnected
ON signal, so that 11 internal switch element of switch unit disconnects.
It is above-mentioned, it is controlled by configuration switch unit, control unit, partial pressure unit and comparing unit, and by control unit
Switching means conductive, and in switching means conductive, the virtual voltage of current circuit is obtained by partial pressure unit, it is later, relatively more single
When member confirmation virtual voltage is less than reference voltage, short-circuit signal is sent to control unit, so that control unit control switch unit
The technical solution of disconnection, can be when circuit crosses flow short-circuit, Reasonable Protection switching device.Compared with prior art, this technology side
Case circuit structure is simple, at low cost, it is easy to accomplish, and being capable of protective efficient switch device.
On the basis of the above embodiments, Fig. 2 is that another short circuit overcurrent provided by the embodiments of the present application protects circuit
Structural schematic diagram.With reference to Fig. 2, switch unit 11 includes the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2, described control unit 12 it is defeated
Outlet includes the first sub- output end and the second sub- output end, and the first end of the partial pressure unit 13 includes the first sub- input terminal and the
Two sub- input terminals, the resistance unit 15 include first resistor R1 and second resistance R2.
The drain electrode of the first metal-oxide-semiconductor Q1 connects firewire input terminal L-IN, the grid of the first metal-oxide-semiconductor Q1 and described the
One sub- output end is connected, and the source electrode of the first metal-oxide-semiconductor Q1 is connected with the described first sub- input terminal, and the first metal-oxide-semiconductor Q1
Source electrode be grounded by the first resistor R1；
The drain electrode of the second metal-oxide-semiconductor Q2 connects fire wire output end L-OUT, the grid of the second metal-oxide-semiconductor Q2 with it is described
Second sub- output end is connected, and the source electrode of the second metal-oxide-semiconductor Q2 is connected with second input terminal, and the second metal-oxide-semiconductor Q2
Source electrode be grounded by the second resistance R2.
Specifically, including two switch elements in configuration switch unit 11 in embodiment, and switching element is metal-oxide-semiconductor.Its
In, the concrete type and model of metal-oxide-semiconductor may be set according to actual conditions.For example, setting metal-oxide-semiconductor as N-type MOS in embodiment
Pipe, model are chosen as FCB20N60.In general, two metal-oxide-semiconductors are same model metal-oxide-semiconductor.In embodiment, two metal-oxide-semiconductors are distinguished
It is denoted as the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2.The effect of two metal-oxide-semiconductors is respectively to access firewire input terminal and fire wire output end,
To realize that circuit accesses alternating current.
Further, since switch unit 11 includes two metal-oxide-semiconductors, then, the output end of control unit 12 should include two
A subport is respectively connected with realizing with two metal-oxide-semiconductors.Wherein, the subport being connected with the first metal-oxide-semiconductor Q1 is denoted as the first son
The subport being connected with the second metal-oxide-semiconductor Q2 is denoted as the second sub- output end by output end.
Optionally, resistance unit includes two resistance, wherein the corresponding metal-oxide-semiconductor of each resistance, to realize metal-oxide-semiconductor
Independent grounding.In embodiment, sets resistance corresponding with the first metal-oxide-semiconductor Q1 and be denoted as first resistor R1, it is corresponding with the second metal-oxide-semiconductor Q2
Resistance be denoted as second resistance R2.
Illustratively, due to comprising the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2, then partial pressure unit 13 obtains switch unit
When the voltage at 11 third ends, it should obtain the voltage of the first metal-oxide-semiconductor Q1 and the voltage of the second metal-oxide-semiconductor Q2 respectively.Therefore, setting point
The first end for pressing unit 13 includes the first sub- input terminal and the second sub- input terminal, to realize the voltage for obtaining two metal-oxide-semiconductors respectively.
Further, the drain electrode of the first metal-oxide-semiconductor Q1 connects firewire input terminal L-IN, it is understood that is, by the first metal-oxide-semiconductor
First end of the drain electrode of Q1 as switch unit 11.The grid of first metal-oxide-semiconductor Q1 is connected with the described first sub- output end, that is, controls
Unit 12 controls being turned on or off for the first metal-oxide-semiconductor Q1 by grid.At this point, single using the grid of the first metal-oxide-semiconductor Q1 as switch
One control terminal of member 11.The source electrode of first metal-oxide-semiconductor Q1 is grounded by first resistor R1, and the source electrode of the first metal-oxide-semiconductor Q1 and
Three sub- input terminals are connected, i.e. the effect due to first resistor R1, so that partial pressure unit 13 is available by the first sub- input terminal
The electric current of first metal-oxide-semiconductor Q1 source electrode.At this point, using the source electrode of the first metal-oxide-semiconductor Q1 as a third end of switch unit 11.Specifically
, the resistance value of first resistor R1 can be according to actual set, for example, setting the resistance value of first resistor R1 as 0.1 Ω.
Further, the drain electrode of the second metal-oxide-semiconductor Q2 connects fire wire output end L-OUT, it is understood that is, by the 2nd MOS
Second end of the drain electrode of pipe Q2 as switch unit 11.The grid of second metal-oxide-semiconductor Q2 is connected with the described second sub- output end, that is, controls
Unit 12 processed controls being turned on or off for the second metal-oxide-semiconductor Q2 by grid.At this point, using the grid of the second metal-oxide-semiconductor Q2 as switch
Another control terminal of unit 11.The source electrode of second metal-oxide-semiconductor Q2 is grounded by second resistance R2, and the source electrode of the second metal-oxide-semiconductor Q2
It is connected with the second sub- input terminal, i.e. the effect due to second resistance R2, so that partial pressure unit 13 can be with by the second sub- input terminal
Obtain the electric current of the second metal-oxide-semiconductor Q2 source electrode.At this point, using the source electrode of the second metal-oxide-semiconductor Q2 as switch unit 11 another
Three ends.Specifically, the resistance value of second resistance R1 can be according to actual set, for example, setting the resistance value of second resistance R2 as 0.1
Ω.In general, the resistance value of second resistance R2 is identical as the resistance value of first resistor R1.It is understood that first resistor R1 and
Second resistance R2 is it is also assumed that be sampling resistor, that is, passing through first resistor R1 and second resistance R2 can be such that partial pressure unit 13 divides
The electric current of two metal-oxide-semiconductor source electrodes is not sampled.
It is turned on or off it should be noted that setting control unit 12 in embodiment and controlling two metal-oxide-semiconductors simultaneously.Actually answer
In, control unit 12 can also be set and control being turned on or off for two metal-oxide-semiconductors respectively.
On the basis of the above embodiments, the grid of the first metal-oxide-semiconductor Q1 also passes through 3rd resistor R3 and is grounded, and described
The grid of two metal-oxide-semiconductor Q2 also passes through the 4th resistance R4 ground connection.
Wherein, 3rd resistor R3 and the 4th resistance R4 is respectively used to protection the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2, to prevent
Only the grid of the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 are breakdown.The resistance value of 3rd resistor R3 and the 4th resistance R4 can be according to realities
The setting of border situation, can be the same or different.For example, setting the resistance value of 3rd resistor R3 and the 4th resistance R4 in embodiment
It is 51K Ω.
On the basis of the above embodiments, the partial pressure unit 13 includes: first diode D1, the second diode D2,
One capacitor C1, the 5th resistance R5, the 6th resistance R6 and zener diode DZ1；
The anode of the first diode D1 is connected with the source electrode of the first metal-oxide-semiconductor Q1, the first diode D1's
Cathode is connected with the first end of the 5th resistance R5；
The anode of the second diode D2 is connected with the source electrode of the second metal-oxide-semiconductor Q2, the second diode D2's
Cathode is connected with the first end of the 5th resistance R5；
The second end of the 5th resistance R5 respectively with the first input end of the comparing unit 14, the 6th resistance R6
The cathode of one end, the first end of first capacitor C1 and zener diode DZ1 is connected；
The second end of the 6th resistance R6, the second end of the first capacitor C1 and the zener diode DZ1
Anode is grounded.
Specifically, first diode D1 has the function of one-way conduction, specific model be may be set according to actual conditions.
For example, setting first diode D1 in embodiment as SS14 diode.Specifically, the anode and the first MOS of first diode D1
The source electrode of pipe Q1 is connected, i.e., using the anode of first diode D1 as the first sub- input terminal, to make in the first metal-oxide-semiconductor Q1 conducting
The electric current of first metal-oxide-semiconductor Q1 source electrode outflow flows into first diode D1, and then partial pressure unit 13 is made to get the first source metal-oxide-semiconductor Q1
The electric current of pole.Further, the second diode D2 equally has the function of one-way conduction, and specific model can be according to practical feelings
Condition setting.For example, the second diode D2 of setting is identical as the model of first diode D1.Specifically, the second diode D2 is just
Pole is connected with the source electrode of the second metal-oxide-semiconductor Q2, i.e., using the anode of the second diode D2 as the second sub- input terminal, in the 2nd MOS
Pipe Q2 obtains the source electrode outflow of the second metal-oxide-semiconductor Q2 electric current when being connected flows into the second diode D2, and then obtains partial pressure unit 13
Get the electric current of the second metal-oxide-semiconductor Q2 source electrode.
Further, the cathode of first diode D1 and the second diode D2 are connected with the first end of the 5th resistance R5.
When two metal-oxide-semiconductors are connected, the electric current for flowing through metal-oxide-semiconductor can flow to the 5th resistance R5 by metal-oxide-semiconductor source electrode and diode.Tool
Body, the 5th resistance R5 is divider resistance, and specific resistance value may be set according to actual conditions.For example, being set in embodiment
The resistance value of 5th resistance R5 is 20K Ω.Pass through the 5th available virtual voltage of resistance R5.
Further, the second end of the 5th resistance R5 is connected with the first input end of comparing unit 14.Flow through the 5th electricity
The electric current of resistance R5 enters comparing unit 14.At this point, comparing unit 14 can determine reality in current circuit by the electric current flowed into
Voltage.
Further, in order to preferably protect circuit, partial pressure unit 13 is set in embodiment further include: the 6th electricity in parallel
R6, first capacitor C1 and zener diode DZ1 are hindered, and is grounded at latter end in parallel, the second of the other end and the 5th resistance R5
End is connected.The wherein plus earth of zener diode DZ1, cathode are connected with the second end of the 5th resistance R5.Typically, the 6th electricity
The design parameter for hindering R6, first capacitor C1 and zener diode DZ1 can be determines according to actual conditions.For example, setting the 6th
The resistance value of resistance R6 is 3k Ω, and the capacitance of first capacitor C1 is 200p, and the pressure stabilizing value of zener diode DZ1 is 3V, power is
1/2W, grade of errors 2%.
On the basis of the above embodiments, Fig. 3 is another short circuit over-current protection circuit provided by the embodiments of the present application
Structural schematic diagram.With reference to Fig. 3, short circuit overcurrent protects circuit further include: the first metal-oxide-semiconductor control unit 16 and second metal-oxide-semiconductor
Control unit 17.
The grid of the first sub- output end and the first metal-oxide-semiconductor Q1 are connected by the first metal-oxide-semiconductor control unit 16
It connects；
The grid of the second sub- output end and the second metal-oxide-semiconductor Q2 are connected by the second metal-oxide-semiconductor control unit 17
It connects.
Specifically, it is single to be set in control in embodiment in order to realize the accurately controlling to switch unit 11 of control unit 12
Metal-oxide-semiconductor control unit is set between member 12 and switch unit 11, with the control issued by metal-oxide-semiconductor control unit to control unit 12
Signal processed amplifies, and then guarantees the accurate acknowledgement control signal of switch unit 11.Wherein, the corresponding MOS of the first metal-oxide-semiconductor Q1
Pipe control unit is denoted as the first metal-oxide-semiconductor control unit 16, at this point, leading between the first sub- output end and the grid of the first metal-oxide-semiconductor Q1
Cross the connection of the first metal-oxide-semiconductor control unit 16.The corresponding metal-oxide-semiconductor control unit of second metal-oxide-semiconductor Q2 is denoted as the second metal-oxide-semiconductor control unit
17, at this point, being connected between the second sub- output end and the grid of the second metal-oxide-semiconductor Q2 by the second metal-oxide-semiconductor control unit 17.
On the basis of the above embodiments, the first metal-oxide-semiconductor control unit 16 includes: the first coupler B1, the 7th electricity
Hinder R7 and the 8th resistance R8；
The first end of the first coupler B1 is connected with the first sub- output end of described control unit 12, first coupling
The second end of clutch B1 is grounded by the 7th resistance R7, the third end of the first coupler B1 and first metal-oxide-semiconductor
The grid of Q1 is connected, and the 4th end of the first coupler B1 is connected by the 8th resistance R8 with the first power supply VCC1.
Specifically, the first coupler B1 is used to amplify control signal.Wherein, the concrete model of the first coupler B1
It may be set according to actual conditions.For example, the first coupler B1 is FOD814A coupler.Further, the first coupler B1
First end is connected with the first sub- input terminal of control unit 12, the control signal sent with reception control unit 12.First coupling
The second end of device B1 is grounded by the 7th resistance R7.Wherein, the 7th resistance R7 may be considered ground resistance, specific resistance value
It may be set according to actual conditions.For example, setting the resistance value of the 7th resistance R7 as 470 Ω.The third end of first coupler B1 with
The grid of first metal-oxide-semiconductor Q1 is connected, to send amplified control signal to the first metal-oxide-semiconductor Q1.The 4th of first coupler B1
End is connected by the 8th resistance R8 with the first power supply VCC1.Wherein, the first power supply VCC1 is used to provide electricity for the first coupler B1
Pressure, specific voltage value may be set according to actual conditions, for example, the first power supply VCC1 is+12V power supply.8th resistance R8
Have the function of dividing and protect, specific resistance value may be set according to actual conditions.For example, the resistance of the 8th resistance R8 of setting
Value is 4.7K Ω.
On the basis of the above embodiments, the second metal-oxide-semiconductor control unit 17 includes: the second coupler B2, the 9th resistance R9
With the tenth resistance R10；
The first end of the second coupler B2 is connected with the second sub- output end of described control unit 12, second coupling
The second end of clutch B2 is grounded by the 9th resistance R9, the third end of the second coupler B2 and second metal-oxide-semiconductor
The grid of Q2 is connected, and the 4th end of the second coupler B2 is connected by the tenth resistance R10 with second source VCC2.
Specifically, the second coupler B2 is used to amplify control signal.Wherein, the concrete model of the second coupler B2
It may be set according to actual conditions.It is set in embodiment, the second coupler B2 and the first coupler B1 are the coupling of same model
Device.Further, the second sub- input terminal of the first end with control unit 12 of the second coupler B1 is connected, with reception control unit
The 12 control signals sent.The second end of second coupler B1 is grounded by the 9th resistance R9.Wherein, the 9th resistance R9 can recognize
To be ground resistance, specific resistance value be may be set according to actual conditions.For example, setting the resistance of the 9th resistance R9 in embodiment
Value is 470 Ω.The third end of second coupler B2 is connected with the grid of the second metal-oxide-semiconductor Q2, is amplified with sending to the second metal-oxide-semiconductor Q2
Control signal afterwards.The 4th end second coupler B2 is connected by the tenth resistance R10 with second source VCC2.Wherein, second
Power supply VCC2 is used to provide voltage for the second coupler B2, and specific voltage value may be set according to actual conditions, for example, the
+ 12V the power supply of two power supplys.Tenth resistance R10 has the function of dividing and protect that specific resistance value can be according to the actual situation
Setting.For example, setting the resistance value of the tenth resistance R10 as 4.7K Ω.
It is understood that setting the first metal-oxide-semiconductor control unit 16 in embodiment and the second metal-oxide-semiconductor control unit 17 having
There are identical element and structure, and the parameter of each element is identical.At this point, the first power supply VCC1 and second source VCC2 can collect
As same power supply.
Optionally, it sets between the grid of the first metal-oxide-semiconductor Q1 and the third end of the first coupler B1 and is being additionally provided with first just
Temperature coefficient thermistor is additionally provided with the second positive temperature between the grid of the second metal-oxide-semiconductor Q2 and the third end of the second coupler B2
Spend coefficient resistance.To control metal-oxide-semiconductor by posive temperature coefficient thermistor and disconnect, with more preferable when circuit temperature is excessively high
Protective current.
On the basis of the above embodiments, described control unit 12 and the comparing unit 14 are integrated in same control chip
In；
The output end of the comparing unit 14 and the input terminal of described control unit 12 are the inside end of the control chip
Mouthful.
Specifically, control unit 12 is using control chip.In embodiment, STM32F051K8 core is used with control unit 12
It is described for piece.At this point, STM32F051K8 chip itself has operational amplifier function, and therefore, in order to simplify circuit structure, by
STM32F051K8 chip carries out the function of comparing unit 14 simultaneously.At this point, control unit 12 and comparing unit 14 can be understood as
It is integrated in same control chip, and the output end of comparing unit 14 and the input terminal of control unit 12 are the inside for controlling chip
Port.
Further, STM32F051K8 chip shares 33 pins, wherein pin 13 is as the first sub- output end and the
The first end of first coupler B1 is connected in one metal-oxide-semiconductor control unit 16, and pin 14 is used as the second sub- output end and the second metal-oxide-semiconductor
The first end of second coupler B2 is connected in control unit 17.First input end of the pin 27 as comparing unit, for connecing
Enter virtual voltage, second input terminal of the pin 28 as comparing unit, for accessing reference voltage.
On the basis of the above embodiments, short circuit over-current protection circuit further include: reference circuit 18；The reference circuit 18
First end be connected with the second input terminal of the comparing unit 14, the second end of the reference circuit 18 and third power supply VCC3
It is connected, the reference circuit 18 is for generating reference voltage.
Specifically, reference voltage is generated by reference circuit 18.Reference circuit 18 may include the second capacitor C2, the 11st electricity
Hinder R11 and twelfth resistor R12 composition.Wherein, eleventh resistor R11 accesses third power supply as divider resistance, first end
VCC3, second end are connected with the second input terminal of comparing unit 14.The resistance value of third power supply VCC3 and eleventh resistor R11 can be with
It is set according to actual conditions.For example, third power settings are+3.3V power supply.The resistance value of eleventh resistor R11 is 10K Ω, error
Range is 1%.Further, the second capacitor C2 and twelfth resistor R12 composes in parallel RC parallel circuit, and RC parallel circuit
First end is connected with the second end of eleventh resistor R11, the second end ground connection of RC parallel circuit.Wherein, the second capacitor C2 and
The design parameter of 12 resistance R12 may be set according to actual conditions.For example, the resistance value of twelfth resistor R12 is 154 Ω, accidentally
Poor range is 1%.The capacitance of second capacitor C2 is 104p.
Specifically, control chip is by pin 13 and pin 14 respectively to the first metal-oxide-semiconductor control unit and the second metal-oxide-semiconductor control
Unit processed sends Continuity signal, and later, the first metal-oxide-semiconductor and the second metal-oxide-semiconductor receive the Continuity signal that corresponding control unit is sent
After be connected, to realize access alternating current.Further, control chip obtains the reference voltage that reference circuit generates by pin 26,
The virtual voltage that partial pressure unit obtains, and the confirmation short circuit when determining that virtual voltage is less than reference voltage are obtained by pin 27,
And cut-off signal is sent to the first metal-oxide-semiconductor control unit and the second metal-oxide-semiconductor control unit respectively by pin 13 and pin 14, with
Disconnect the first metal-oxide-semiconductor and the second metal-oxide-semiconductor.It is above-mentioned can be when circuit crosses flow short-circuit, Reasonable Protection metal-oxide-semiconductor.And with existing skill
Art is compared, have structure it is simple, it is at low cost, it is easy to accomplish, and can effective protection metal-oxide-semiconductor the advantages of.
The embodiment of the present application also provides a kind of electronic equipment.The electronic equipment includes above-mentioned short circuit over-current protection circuit, tool
Standby corresponding function and beneficial effect.The technical detail not being described in detail in the electronic device is referring to above-mentioned voltage reduction circuit.
Note that above are only the preferred embodiment and institute's application technology principle of the application.It will be appreciated by those skilled in the art that
The application is not limited to specific embodiment described here, be able to carry out for a person skilled in the art it is various it is apparent variation,
The protection scope readjusted and substituted without departing from the application.Therefore, although being carried out by above embodiments to the application
It is described in further detail, but the application is not limited only to above embodiments, in the case where not departing from the application design, also
It may include more other equivalent embodiments, and scope of the present application is determined by the scope of the appended claims.
Claims (10)
1. a kind of short circuit over-current protection circuit characterized by comprising switch unit, control unit, partial pressure unit and compare
Unit；
The output end of described control unit is connected with the control terminal of the switch unit, and the first end of the switch unit connects fire
The second end of line input terminal, the switch unit connects fire wire output end, and the third end of the switch unit passes through resistance unit
Ground connection；
The first end of the partial pressure unit is connected with the third end of the switch unit, the second end of the partial pressure unit with it is described
The first input end of comparing unit is connected；
Second input terminal of the comparing unit accesses reference voltage, the output end of the comparing unit and described control unit
Input terminal is connected；
Described control unit is used to send Continuity signal to the switch unit, so that the switching means conductive；The control
Unit is also used to send cut-off signal to the switch unit according to short-circuit signal, so that the switch unit disconnects；Described point
Voltage of the pressure unit for the third end in the switching means conductive according to the switch unit obtains virtual voltage；It is described
Comparing unit is used to export the short-circuit signal to described control unit when the virtual voltage is lower than the reference voltage.
2. short circuit over-current protection circuit according to claim 1, which is characterized in that the switch unit includes the first MOS
Pipe and the second metal-oxide-semiconductor, the output end of described control unit include the first sub- output end and the second sub- output end, the partial pressure unit
First end include the first sub- input terminal and the second sub- input terminal, the resistance unit include first resistor and second resistance；
The drain electrode of first metal-oxide-semiconductor connects firewire input terminal, the grid of first metal-oxide-semiconductor and the described first sub- output end phase
Even, the source electrode of first metal-oxide-semiconductor is connected with the described first sub- input terminal, and the source electrode of first metal-oxide-semiconductor passes through described the
One resistance eutral grounding；
The drain electrode of second metal-oxide-semiconductor connects fire wire output end, the grid of second metal-oxide-semiconductor and the described second sub- output end phase
Even, the source electrode of second metal-oxide-semiconductor is connected with the described second sub- input terminal, and the source electrode of second metal-oxide-semiconductor passes through described the
Two resistance eutral groundings.
3. short circuit over-current protection circuit according to claim 2, which is characterized in that the grid of first metal-oxide-semiconductor is also logical
3rd resistor ground connection is crossed, the grid of second metal-oxide-semiconductor also passes through the 4th resistance eutral grounding.
4. short circuit over-current protection circuit according to claim 2, which is characterized in that the partial pressure unit includes: the one or two
Pole pipe, the second diode, first capacitor, the 5th resistance, the 6th resistance and zener diode；
The first diode anode be connected with the source electrode of first metal-oxide-semiconductor, the cathode of the first diode with it is described
The first end of 5th resistance is connected；
Second diode anode be connected with the source electrode of second metal-oxide-semiconductor, the cathode of second diode with it is described
The first end of 5th resistance is connected；
The second end of 5th resistance respectively with the first input end of the comparing unit, the first end of the 6th resistance, first
The first end of capacitor and the cathode of zener diode are connected；
Second end, the second end of the first capacitor and the positive of the zener diode of 6th resistance are grounded.
5. short circuit over-current protection circuit according to claim 2, which is characterized in that further include: the first metal-oxide-semiconductor control unit
With the second metal-oxide-semiconductor control unit；
The first sub- output end is connected with the grid of first metal-oxide-semiconductor by the first metal-oxide-semiconductor control unit；
The second sub- output end is connected with the grid of second metal-oxide-semiconductor by the second metal-oxide-semiconductor control unit.
6. short circuit over-current protection circuit according to claim 5, which is characterized in that the first metal-oxide-semiconductor control unit packet
It includes: the first coupler, the 7th resistance and the 8th resistance；
The first end of first coupler is connected with the first sub- output end of described control unit, and the of first coupler
By the 7th resistance eutral grounding, the third end of first coupler is connected with the grid of first metal-oxide-semiconductor, described at two ends
4th end of the first coupler is connected by the 8th resistance with the first power supply.
7. short circuit over-current protection circuit according to claim 5, which is characterized in that the second metal-oxide-semiconductor control unit packet
It includes: the second coupler, the 9th resistance and the tenth resistance；
The first end of second coupler is connected with the second sub- output end of described control unit, and the of second coupler
By the 9th resistance eutral grounding, the third end of second coupler is connected with the grid of second metal-oxide-semiconductor, described at two ends
4th end of the second coupler is connected by the tenth resistance with second source.
8. short circuit over-current protection circuit according to claim 1, which is characterized in that described control unit and the relatively list
Member is integrated in same control chip；
The output end of the comparing unit and the input terminal of described control unit are the internal port of the control chip.
9. short circuit over-current protection circuit according to claim 1, which is characterized in that further include: reference circuit；
The first end of the reference circuit is connected with the second input terminal of the comparing unit, the second end of the reference circuit with
Third power supply is connected, and the reference circuit is for generating reference voltage.
10. a kind of electronic equipment, which is characterized in that including the short circuit over-current protection circuit as described in claim 1-9 is any.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822144518.9U CN209119793U (en) | 2018-12-20 | 2018-12-20 | Overcurrent short-circuit protection circuit and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822144518.9U CN209119793U (en) | 2018-12-20 | 2018-12-20 | Overcurrent short-circuit protection circuit and electronic equipment |
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| Publication Number | Publication Date |
|---|---|
| CN209119793U true CN209119793U (en) | 2019-07-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112600169A (en) * | 2020-12-04 | 2021-04-02 | 西安易朴通讯技术有限公司 | Protection device, Buck circuit and control method of Buck circuit |
-
2018
- 2018-12-20 CN CN201822144518.9U patent/CN209119793U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112600169A (en) * | 2020-12-04 | 2021-04-02 | 西安易朴通讯技术有限公司 | Protection device, Buck circuit and control method of Buck circuit |
| CN112600169B (en) * | 2020-12-04 | 2023-09-12 | 西安易朴通讯技术有限公司 | Protection device, buck circuit and control method of Buck circuit |
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