CN209104154U - Optical sensor structure - Google Patents
Optical sensor structure Download PDFInfo
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- CN209104154U CN209104154U CN201822171484.2U CN201822171484U CN209104154U CN 209104154 U CN209104154 U CN 209104154U CN 201822171484 U CN201822171484 U CN 201822171484U CN 209104154 U CN209104154 U CN 209104154U
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Abstract
A kind of optical sensor structure, comprising: substrate；Fingerprint sensing circuit layer on substrate, the fingerprint sensing circuit layer include: several sensitive pixel elements；Non-photo-sensing pixel unit positioned at the side of several sensitive pixel elements；The sensitive pixel elements include: light sensitive diode；The first switch device being electrically connected with light sensitive diode；The non-photo-sensing pixel unit includes: capacitor；The second switch device being electrically connected with the capacitor.The performance of the optical sensor structure is improved.
Description
Technical field
The present invention relates to sensor field more particularly to a kind of optical sensor structures.
Background technique
Optical sensor is a kind of planar imaging equipment of large area, by pixel unit array, driving line, signal sense line
Deng composition.Optical signal with image information is projected directly at each pixel unit of sensor imaging surface, by sensor
Pixel unit is absorbed and is imaged.It is same size, the imaging without scaling due to focusing light without lens or optical fiber, thus
Have better image quality；Imaging device is also more frivolous simultaneously, so being widely used in every field.
For example it is applied to the optical sensor in the fields such as fingerprint imaging, file scan.Each pixel unit by switching device and
Photoelectric device is constituted.Visible light is converted into electronic signal by the photoelectric device in each pixel unit of optical sensor and stores
Come.System controller controls the driving chip on driving unit, to control the driving line on optical sensor, and then controls pixel
The unlatching line by line of cell array；Signal on simultaneity factor controller control signal acquisition unit reads chip, is passed by optics
Signal wire on sensor reads the electronic signal of that a line being turned in pixel unit array, then amplifies, modulus
Conversion, storage.Finally realize a digital grey scale image directly related with irradiated object surface characteristics.
However, the performance of existing optical sensor is to be improved.
Summary of the invention
Problems solved by the invention is to provide a kind of optical sensor structure, to improve the performance of optical sensor.
To solve the above problems, the present invention provides a kind of optical sensor, comprising: substrate；Fingerprint sense on substrate
Slowdown monitoring circuit layer, the fingerprint sensing circuit layer include: several sensitive pixel elements；Positioned at the side of several sensitive pixel elements
The non-photo-sensing pixel unit in portion；The sensitive pixel elements include: light sensitive diode；First be electrically connected with light sensitive diode
Switching device；The non-photo-sensing pixel unit includes: capacitor；The second switch device being electrically connected with the capacitor.
Optionally, the substrate includes photosensitive area and non-photo-sensing area, and several sensitive pixel elements are located on the photosensitive area,
Non-photo-sensing pixel unit is located in the non-photo-sensing area；The photosensitive area includes effective photosensitive area and first switch area, and photosensitive two
Pole pipe is located on effective photosensitive area, and first switch device is located in first switch area；The non-photo-sensing area includes effective non-photo-sensing
Area and second switch area, the capacitor are located in effective non-photo-sensing area, and second switch device is located in second switch area；The sense
Light pixel unit includes: the first conductive layer positioned at substrate first switch area part of the surface；Positioned at effective photosensitive area surface and
One switch region surface and the first insulating layer for covering the first conductive layer；The first insulating layer part of the surface positioned at first switch area
First semiconductor layer, and the first semiconductor layer is opposite with the first conductive layer in first switch area；Cover the first semiconductor layer
Second conductive layer, second conductive layer is interior to have the first opening, and the bottom surface of the first opening is the table of the first semiconductor layer
Face, and the second conductive layer also extends to the first surface of insulating layer of effective photosensitive area；Cover the second conductive layer and filling full first
The second insulating layer of opening；The second opening in the second insulating layer of effective photosensitive area, the bottom of the second opening are second
The surface of conductive layer；The light sensitive diode in the second opening and being covered in the second opening is filled, light sensitive diode also extends
To the atop part surface of second insulating layer, the bottom surface of light sensitive diode and the second conductive layer contact；Third insulating layer, the
Three insulating layers cover the atop part surface of the light sensitive diode, in second insulating layer light sensitive diode side wall and second
Insulating layer, has the third opening being located on light sensitive diode in third insulating layer, and the bottom surface of third opening is photosensitive two
The surface of pole pipe；The first transparency conducting layer on the inner wall of third opening and the third insulating layer in first switch area；Institute
Stating non-photo-sensing pixel unit includes: the third conductive layer positioned at substrate second switch area part of the surface；Positioned at effective non-photo-sensing area
Surface and second switch area surface and the 4th insulating layer for covering third conductive layer；Positioned at the 4th insulating layer portion in second switch area
Divide second semiconductor layer on surface, and the second semiconductor layer is opposite with the third conductive layer in second switch area；Cover the second half
4th conductive layer of conductor layer, the 4th conductive layer is interior to have the 4th opening, and the bottom surface of the 4th opening is the second semiconductor layer
Surface, and the 4th conductive layer also extends to the 4th surface of insulating layer in effective non-photo-sensing area；Cover the 4th conductive layer and filling
Second transparency conducting layer of the insulation system layer covering insulation system layer of full 4th opening.
Optionally, the insulation system layer is laminated construction；The insulation system layer includes: the 4th conductive layer of covering and fills out
The 5th insulating layer full of the 4th opening；Cover the 6th insulating layer of the 5th insulating layer；Second transparency conducting layer covering the
Six insulating layers.
Optionally, the insulation system layer is single layer structure.
Optionally, the sensitive pixel elements further include: the first additional capacitor, the first additional capacitor and light sensitive diode connect
It connects；The non-photo-sensing pixel unit further include: the second additional capacitor, the second additional capacitor and the capacitance connection.
Optionally, first conductive layer is also located at the effective photosensitive area part of the surface of substrate, and in first switch area
The first conductive layer on one conductive layer and effective photosensitive area is mutually discrete；The first conductive layer on effective photosensitive area is located at the sense
The bottom of optical diode；The third conductive layer is also located at the effective non-photo-sensing area part of the surface of substrate, and the effective non-photo-sensing of substrate
The third conductive layer on third conductive layer and substrate second switch area in area is mutually discrete；In the effective non-photo-sensing area of substrate,
Third conductive layer is located at the bottom of the 4th conductive layer.
Optionally, first transparency conducting layer and the second transparency conducting layer are connected to the first common potential；It is described to have
The third conductive layer of the first conductive layer and effective non-photo-sensing area on effect photosensitive area is connected to the second common potential；Second is public
Current potential and the first common potential are equal or different.
Optionally, further includes: the first light blocking layer on the third insulating layer in first switch area, and the first light blocking layer position
In in the first opening；The second light blocking layer on the 6th insulating layer in second switch area, and the second light blocking layer is located at the 4th and opens
On mouth.
Optionally, first light blocking layer is located on the first transparency conducting layer, and the second light blocking layer is located at second and transparent leads
In electric layer.
Optionally, first light blocking layer is located at the bottom of the first transparency conducting layer, and the second light blocking layer is located at second thoroughly
Bright conductive layer bottom.
Optionally, several sensitive pixel elements are arranged in several columns；If the non-photo-sensing pixel unit in one column or
Dry column；The column direction of the non-photo-sensing pixel unit is parallel with the column direction of several sensitive pixel elements.
Optionally, several sensitive pixel elements are arranged in several rows；If the non-photo-sensing pixel unit in a line or
The line direction of dry row, the non-photo-sensing pixel unit is parallel with the line direction of several sensitive pixel elements.
Optionally, the non-photo-sensing pixel unit is located at the side of several sensitive pixel elements；Alternatively, the non-sense
Light pixel unit is located at the two sides of several sensitive pixel elements.
Compared with prior art, technical solution of the present invention has the advantage that
In the optical sensor structure that technical solution of the present invention provides, when light exposes to sensitive pixel elements, non-sense
Light pixel unit is used to collect the real-time electronic noise of optical sensor, and the signal value of each sensitive pixel elements output is individually subtracted
The average value of part or all of non-photo-sensing pixel unit output background signal value, to eliminate the Most electronic noise of image,
Improve image effect.Since non-photo-sensing pixel unit includes capacitor and second switch device, power-supply fluctuation is collected by capacitor
Or external electromagnetic wave thus is avoided that the interference information of optical sensor structure and adds covering photodiode using photodiode
The structure of light blocking layer collect power-supply fluctuation or external electromagnetic wave to the interference information of optical sensor structure, therefore the electricity
Appearance can be avoided cause dark current and and the case where light leakage so that the information of each non-photo-sensing structure output is more consistent, make in this way
It is more preferable to obtain the effect that electronic noise is eliminated, avoids introducing other interference in electronic noise, such as the light letter of non-photo-sensing pixel unit
Number and dark current signals.To sum up improve the performance of optical sensor structure.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of optical sensor structure in one embodiment of the invention；
Fig. 2 is the schematic diagram of sensitive pixel elements and non-photo-sensing pixel unit in Fig. 1；
Fig. 3 is the sectional view of the cutting line A-a along Fig. 2；
Fig. 4 is the flow chart of optical sensor structure forming process in another embodiment of the present invention；
Fig. 5 is the schematic diagram of optical sensor circuit in further embodiment of this invention；
Fig. 6 is the schematic diagram of sensitive pixel elements and non-photo-sensing pixel unit in another embodiment of the present invention；
Fig. 7 is the sectional view of the B-b along Fig. 6；
Fig. 8 is the schematic diagram of optical sensor circuit in another embodiment of the present invention.
Specific embodiment
As described in background, the performance of the optical sensor structure of the prior art is poor.
A kind of optical sensor structure, comprising: substrate；Fingerprint sensing circuit layer on substrate, the fingerprint sensing
Circuit layer includes: several sensitive pixel elements；Non-photo-sensing pixel unit positioned at the side of several sensitive pixel elements；Institute
Stating sensitive pixel elements includes: the first light sensitive diode；The first switch device being electrically connected with the first light sensitive diode；It is described
Non-photo-sensing pixel unit includes: the second light sensitive diode；The second switch device being electrically connected with second light sensitive diode；
Cover the light blocking layer of the second light sensitive diode.
Non-photo-sensing pixel unit is used to collect the real-time electronic noise of optical sensor, the letter of each sensitive pixel elements output
The average value of part or all of non-photo-sensing pixel unit output background signal value is individually subtracted in number value, to eliminate the exhausted big portion of image
Divide electronic noise, improves image effect.
In the non-photo-sensing pixel unit, the structure of light blocking layer is added to collect optical sensor using the second light sensitive diode
Real-time electronic noise.Firstly, being influenced by technological fluctuation, the position of the position of light blocking layer and the second light sensitive diode can be sent out
Raw offset, then light blocking layer cannot cover the second light sensitive diode well, causes the second light sensitive diode part photosensitive,
It is secondary, due to substrate be PI substrate or glass substrate when, substrate light transmission, therefore, the light around optical sensor structure expose to
In substrate, after the bottom reflection or scattering of substrate, into the second light sensitive diode, the second light sensitive diode part is caused to be felt
Light.Since the second light sensitive diode part is photosensitive, then will believe comprising part light in the signal of non-photo-sensing pixel unit output
Number, and this part optical signals belongs to interference optical signal.Each non-photo-sensing pixel just includes interference optical signal and electronic noise signal, and
And interference optical signal and electronic noise can not separate.Each pixel unit (each sensitive pixel elements and each non-photo-sensing pixel unit) is all
Interference optical signal can be received, and the interference light signal strength of each pixel unit is very different, and there is randomness.
In addition, second light sensitive diode itself can have dark current, then in the signal of non-photo-sensing pixel unit output just
It can include the dark current signals of the second light sensitive diode, each pixel unit (each sensitive pixel elements and each non-photo-sensing pixel unit)
Middle dark current size is also very different, has randomness.
Based on above content, if the signal of non-photo-sensing pixel unit contains above-mentioned interference optical signal and dark current letter
Number, it, will be by above-mentioned with randomness then after the signal of sensitive pixel elements to be subtracted to the signal of non-photo-sensing pixel unit
Interference optical signal and dark current signals are introduced into final picture signal.Therefore, it can be introduced while reducing electronic noise
Interfere optical signal and dark current signals.Finally, the noise that will lead to final image becomes larger instead, so that image effect is worse.
On this basis, the present invention provides a kind of optical sensor structure, comprising: substrate；Fingerprint sense on substrate
Slowdown monitoring circuit layer, the fingerprint sensing circuit layer include: several sensitive pixel elements；Positioned at the side of several sensitive pixel elements
The non-photo-sensing pixel unit in portion；The sensitive pixel elements include: light sensitive diode；First be electrically connected with light sensitive diode
Switching device；The non-photo-sensing pixel unit includes: capacitor；The second switch device being electrically connected with the capacitor.The light
The performance for learning sensor structure is improved.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
The embodiment of the present invention provides a kind of optical sensor structure, incorporated by reference to reference Fig. 1, Fig. 2 and Fig. 3, comprising:
Substrate 100；
Fingerprint sensing circuit layer 110 on substrate 100, the fingerprint sensing circuit layer 110 include: several light-sensitive images
Plain unit 110a；Non-photo-sensing pixel unit 110b positioned at the side of several sensitive pixel elements 110a；
The sensitive pixel elements 110a includes: light sensitive diode 120；First be electrically connected with light sensitive diode 120
Switching device 130；
The non-photo-sensing pixel unit 110b includes: capacitor 140；The second switch device being electrically connected with the capacitor 140
Part 150.
The substrate 100 is PI substrate or glass substrate.
The substrate 100 includes photosensitive area S1 and non-photo-sensing area S2, and several sensitive pixel elements 110a are located at described photosensitive
On area S1, non-photo-sensing pixel unit 110b is located on the non-photo-sensing area S2.
The optical sensor structure further include: the first data line being connect with each column sensitive pixel elements a1；With each column
Second data line of non-photo-sensing pixel unit a2 connection.
Non-photo-sensing pixel unit 110b and the sole difference of sensitive pixel elements 110a are: non-photo-sensing pixel unit 110b does not have
There is photonasty, sensitive pixel elements 110a has photonasty.
In the present embodiment, several sensitive pixel elements 110a are arranged in several columns；The non-photo-sensing pixel unit
110b is in a column or several columns；The column direction of the non-photo-sensing pixel unit 110b and the column side of several sensitive pixel elements 110a
To parallel.
In the present embodiment, the second data line is connect with non-photo-sensing pixel unit 110b, due to non-photo-sensing pixel unit 110b
There is no photonasty, therefore the output valve of the second data line is adapted to remain in a background signal value.In Image Acquisition, power supply wave
The electronic noise that dynamic or external electromagnetic wave generates the interference of optical sensor structure will be comprised in this background signal
In value, and non-photo-sensing pixel unit 110b be disturbed with sensitive pixel elements 110a be it is synchronous, size is also basic one
It causes.Therefore when optical sensor does not have light incidence, the signal value of the first data line output and the letter of the second data line output
Number value is almost the same.When light exposes to sensitive pixel elements 110a, the second data line is used to collect the reality of optical sensor
When electronic noise.In every a line, part or all of second data line output is individually subtracted in the signal value of each first data line output
Signal value average value, to eliminate most row noises (electronic noise changes over time) of image, improve image effect
Fruit.
In other embodiments, several sensitive pixel elements are arranged in several rows；The non-photo-sensing pixel unit is in
The line direction of a line or several rows, the non-photo-sensing pixel unit is parallel with the line direction of several sensitive pixel elements, described non-
Sensitive pixel elements are for eliminating fixed column difference (electronic signal offset does not change over time).There are one between different lines
The difference of the electronic signal of a fixation, and this difference does not change over time.
In the present embodiment, since non-photo-sensing pixel unit includes capacitor and second switch device, power supply is collected by capacitor
Fluctuation or external electromagnetic wave thus are avoided that the interference information of optical sensor structure and add covering photoelectricity two using photodiode
The structure of the light blocking layer of pole pipe collects power-supply fluctuation or external electromagnetic wave to the interference information of optical sensor structure, therefore institute
State capacitor can be avoided cause dark current and and the case where light leakage so that the information of each non-photo-sensing structure output is more consistent, this
Sample avoids introducing other interference in electronic noise, such as the optical signal and dark current signals of non-photo-sensing pixel unit, avoids subtracting
The dark current signals of interference optical signal and non-photo-sensing pixel can be introduced while small electronic noise.
In the present embodiment, the non-photo-sensing pixel unit 110b is located at the two of several sensitive pixel elements 110a
Side, in other embodiments, the non-photo-sensing pixel unit are located at the side of several sensitive pixel elements.
It should be noted that the non-photo-sensing pixel unit 110b is located at several sensitive pixel elements 110a's
Two sides refer to: the non-photo-sensing pixel unit 110b is located at the two sides of several sensitive pixel elements 110a entirety；It is described
Non-photo-sensing pixel unit is located at the side of several sensitive pixel elements, refers to: the non-photo-sensing pixel unit is located at institute
State the side of several sensitive pixel elements 110a entirety.
It should be noted that photosensitive between sensitive pixel elements 110a between adjacent column and between adjacent rows
Without non-photo-sensing pixel unit 110b between pixel unit 110a.It thus is avoided that the image missing of effective imaging region.
The photosensitive area S1 includes effective photosensitive area S11 and first switch area S12, and light sensitive diode 120 is located at effective feeling
On light area S11, first switch device 130 is located on first switch area S12.
The non-photo-sensing area S2 includes effective non-photo-sensing area S21 and second switch area S22, and the capacitor 140 is located at effective
On non-photo-sensing area S21, second switch device 150 is located on second switch area S22.
First switch device 130 is transistor, such as amorphous silicon film transistor (amorphous Silicon Thin
Film Transistor, a-Si TFT), low-temperature polysilicon film transistor (Low Temperature Poly Silicon
Thin Film Transistor, LTPS TFT) or oxide semiconductor thin-film transistor (Oxide Semiconductor
Thin Film Transistor, OTFT).
Second switch device 150 is transistor, such as amorphous silicon film transistor (amorphous Silicon Thin
Film Transistor, a-Si TFT), low-temperature polysilicon film transistor (Low Temperature Poly Silicon
Thin Film Transistor, LTPS TFT) or oxide semiconductor thin-film transistor (Oxide Semiconductor
Thin Film Transistor, OTFT).
It is amorphous silicon film transistor with first switch device 130 in the present embodiment, second switch device 150 is amorphous
Silicon thin film transistor is illustrated for example.
The sensitive pixel elements 110a includes: the first conductive layer positioned at 100 first switch area S12 part of the surface of substrate
210；Positioned at the surface effective photosensitive area S11 and the first switch area surface S12 and the first insulating layer of the first conductive layer 210 of covering
220；Positioned at the first semiconductor layer 230 of 220 part of the surface of the first insulating layer of first switch area S12, and the first semiconductor layer
230 is opposite with the first conductive layer 210 on first switch area S12；Cover the second conductive layer 240 of the first semiconductor layer 230, institute
Stating has the first opening in the second conductive layer 240, the bottom surface of the first opening is the surface of the first semiconductor layer 230, and the
Two conductive layers 240 also extend to 220 surface of the first insulating layer of effective photosensitive area S11；It covers the second conductive layer 240 and filling is full
The second insulating layer 250 of first opening；The second opening in the second insulating layer 250 of effective photosensitive area S11, the second opening
Bottom be the second conductive layer 240 surface；It is filled in the light sensitive diode in the second opening and being covered in the second opening
120, light sensitive diode 120 also extends to the atop part surface of second insulating layer 250, the bottom surface of light sensitive diode 120
It is contacted with the second conductive layer 240；Third insulating layer 260, third insulating layer 260 cover the part top of the light sensitive diode 120
The side wall and second insulating layer 250 of light sensitive diode 120 on portion surface, second insulating layer 250 have in third insulating layer 260
There is the third opening being located on light sensitive diode 120, the bottom surface of third opening is the surface of light sensitive diode 120；It is located at
The first transparency conducting layer 270 on the inner wall of third opening and the third insulating layer 260 of first switch area S12.
The non-photo-sensing pixel unit 110b includes: the third conduction positioned at 100 second switch area S22 part of the surface of substrate
Layer 211；Positioned at the 4th insulation of effective non-photo-sensing area surface S21 and the second switch area surface S22 and covering third conductive layer 211
Layer 221；Positioned at the second semiconductor layer 231 of 221 part of the surface of the 4th insulating layer of second switch area S22, and the second semiconductor
Third conductive layer 211 on floor 231 and second switch area S22 is opposite；The 4th conductive layer 241 of the second semiconductor layer 231 is covered,
There is the 4th opening, the bottom surface of the 4th opening is the surface of the second semiconductor layer 231, and the 4th in 4th conductive layer 241
Conductive layer 241 also extends to 221 surface of the 4th insulating layer of effective non-photo-sensing area S21；It covers the 4th conductive layer 241 and filling is full
The insulation system layer of 4th opening；Cover the second transparency conducting layer 271 of insulation system layer.
In the present embodiment, insulation system layer is laminated construction；The insulation system layer includes: the 4th conductive layer 241 of covering
And the 5th insulating layer 251 of full 4th opening of filling；Cover the 6th insulating layer 261 of the 5th insulating layer 251.
In the present embodiment, second transparency conducting layer 271 covers the 6th insulating layer 261.
In other embodiments, the insulation system layer is single layer structure.
In above structure, first switch device 130 includes: the first conductive layer 210 on first switch area S12, the first half
The second conductive layer 240 on conductor layer 230 and first switch area S12.
In above structure, second switch device 150 includes: third conductive layer 211 on second switch area S22, the second half
The 4th conductive layer 241 on conductor layer 231 and second switch area S22.
In above structure, the capacitor includes: the 4th conductive layer 241 on effective non-photo-sensing area S21, effective non-photo-sensing area
The second transparency conducting layer 271 on insulation system floor and effectively non-photo-sensing area S21 on S21.On effective non-photo-sensing area S21
A conductive plate of the 4th conductive layer 241 as the capacitor, the second transparency conducting layer on effective non-photo-sensing area S21
271 another conductive plate as the capacitor, electricity of the insulation system floor as the capacitor on effective non-photo-sensing area S21
Hold dielectric layer.
In the present embodiment, insulation system layer includes the 5th insulating layer 251 and the 6th insulating layer 261, correspondingly, effectively non-sense
The 6th insulating layer 261 on the 5th insulating layer 251 and effective non-photo-sensing area S21 on light area S21 is collectively as the capacitor
Capacitor dielectric layer, since the capacitor dielectric layer of the capacitor is double-layer structure, defect occurs for the capacitor dielectric layer of the capacitor
Probability reduces, therefore the probability to leak electricity reduction occurs in capacitor dielectric layer, and the stability of the capacitor improves.
First conductive layer 210, the second conductive layer 240, third conductive layer 211 and the 4th conductive layer 241 material can
To be aluminium, molybdenum or aluminium neodymium alloy, it is also possible to the multilayered structure of other alloying metals or different materials.On first switch area S12
Grid of first conductive layer 210 as first switch device 130, be located at 230 liang of the first semiconductor layer on first switch area S12
Second conductive layer 240 of side is the source electrode and drain electrode of first switch device 130.Third conductive layer 211 on second switch area S22
As the grid of second switch device 150, the 4th conductive layer 241 of 231 two sides of the second semiconductor layer on second switch area S22
For the source electrode and drain electrode of second switch device 150.
The material of first semiconductor layer 230 is amorphous silicon, low temperature polycrystalline silicon or oxide semiconductor.Second semiconductor
The material of layer 231 is amorphous silicon, low temperature polycrystalline silicon or oxide semiconductor.
First insulating layer 220, second insulating layer 250, third insulating layer 260, the insulation of the 4th insulating layer the 221, the 5th
The material of layer 251 and the 6th insulating layer 261 can be silicon nitride (SiNx) or silica (SiOx).
The material of first transparency conducting layer 270 and the second transparency conducting layer 271 includes tin indium oxide (ITO).
Channel of first semiconductor layer 230 of the first open bottom as first switch device 130, the 4th open bottom
Channel of second semiconductor layer 231 as second switch device 150.
The light sensitive diode 120 is PIN structural, specifically, the light sensitive diode 120 includes n-layer, is located at N-shaped
I type layer on layer and the p-type layer on i type layer.Wherein, the second conductive layer 240 in n-layer and effective photosensitive area S11
Contact.
In the present embodiment, the n-layer is located at the sidewall surfaces and bottom surface of second opening, and n-layer is also prolonged
Extend to the atop part surface of second insulating layer 250 around the second opening；The i type layer is located in second opening and the
In two openings, the i type layer is also extended in the second parameatal part second insulating layer 250, and the i type layer is located at described
The upper surface of n-layer；The p-type layer is located at the upper surface of the i type layer.
First transparency conducting layer 270 and the second transparency conducting layer 271 are connected to the first common potential.
The grid of first switch device 130 connects turntable driving line with the grid of second switch device 150.Described first leads
Electric layer 210 and third conductive layer 211 are also used as turntable driving line.
In the present embodiment, the second conductive layer 240 is also used as the first data line, and the 4th conductive layer 241 is also used as
Second data line.
For the second conductive layer 240 on first switch area S12, second positioned at 230 side of the first semiconductor layer is conductive
Layer 240 is the source electrode of first switch device 130, and the second conductive layer 240 positioned at 230 other side of the first semiconductor layer is opened for first
Close the drain electrode of device 130.
In the present embodiment, the drain electrode of first switch device 130 is connect with light sensitive diode 120, in other embodiments, the
The source electrode of one switching device is connect with light sensitive diode.
In the present embodiment, when the drain electrode of first switch device 130 is connect with light sensitive diode 120, first switch device
130 source electrode is connect with the first data line.In other embodiments, the source electrode of first switch device is connect with light sensitive diode,
The drain electrode of first switch device is connect with the first data line.
In the present embodiment, for the 4th conductive layer 241 on second switch area S22, it is located at 231 side of the second semiconductor layer
The 4th conductive layer 241 be second switch device 150 source electrode, the 4th conductive layer positioned at 231 other side of the second semiconductor layer
241 be the drain electrode of second switch device 150.
In the present embodiment, the drain electrode and capacitance connection of second switch device 150, in other embodiments, first switch device
The source electrode and capacitance connection of part.
In the present embodiment, when the drain electrode of second switch device 150 and capacitance connection, the source electrode of second switch device 150
It is connect with the second data line.In other embodiments, the source electrode and capacitance connection of second switch device, the leakage of second switch device
Pole is connect with the second data line.
In the present embodiment, the optical sensor structure further include: positioned at the third insulating layer 260 of first switch area S12
On the first light blocking layer 280, and the first light blocking layer 280 be located at first opening on；Positioned at the 6th insulating layer of second switch area S22
The second light blocking layer 281 on 261, and the second light blocking layer 281 is located in the 4th opening.
In the present embodiment, first light blocking layer 280 is located on the first transparency conducting layer 270, and the second light blocking layer 281
In on the second transparency conducting layer 271.In other embodiments, first light blocking layer is located at the bottom of the first transparency conducting layer,
And second light blocking layer be located at the second transparency conducting layer bottom.
First light blocking layer 280 and the second light blocking layer 281 are made of impermeable light conductive material, can be aluminium, molybdenum or aluminium
Neodymium alloy (AlNd), is also possible to other alloying metals, can also be the multilayered structure of different materials.
The present embodiment also provides a kind of forming method of optical sensor structure, with reference to Fig. 4, comprising the following steps:
S01: substrate is provided；
S02: forming fingerprint sensing circuit layer on the substrate, and the method for forming fingerprint sensing circuit layer includes: to be formed
Several sensitive pixel elements；
S03: forming non-photo-sensing pixel unit, and the non-photo-sensing pixel unit is located at the side of several sensitive pixel elements
Portion；
S04: the method for forming the sensitive pixel elements includes: to form light sensitive diode；First switch device is formed, the
One switching device and light sensitive diode are electrically connected；The method for forming the non-photo-sensing pixel unit includes: to form capacitor；It is formed
Second switch device, second switch device and the capacitor are electrically connected.
The substrate includes photosensitive area and non-photo-sensing area, and several sensitive pixel elements are located on the photosensitive area, non-photo-sensing
Pixel unit is located in the non-photo-sensing area；The photosensitive area includes effective photosensitive area and first switch area, light sensitive diode position
In on effective photosensitive area, first switch device is located in first switch area；The non-photo-sensing area includes effective non-photo-sensing area and
Two switch regions, the capacitor are located in effective non-photo-sensing area, and second switch device is located in second switch area.
The method for forming the sensitive pixel elements and non-photo-sensing pixel unit includes: in substrate first switch area
Part of the surface forms the first conductive layer；Part table during forming the first conductive layer, in substrate second switch area
Face forms third conductive layer；The first insulation of the first conductive layer of covering is formed on effective photosensitive area surface and first switch area surface
Layer；During forming the first insulating layer, covering third is formed on effective non-photo-sensing area surface and second switch area surface and is led
4th insulating layer of electric layer；The first insulating layer part of the surface in first switch area forms the first semiconductor layer, and the first half lead
Body layer is opposite with the first conductive layer；During forming the first semiconductor layer, in the 4th insulating layer part in second switch area
Surface forms the second semiconductor layer, and the second semiconductor layer is opposite with third conductive layer；Form the of the first semiconductor layer of covering
Two conductive layers, second conductive layer is interior to have the first opening, and the bottom surface of the first opening is the surface of the first semiconductor layer,
And second conductive layer also extend to the first surface of insulating layer of effective photosensitive area；During forming the second conductive layer, formed
It covers the 4th conductive layer of the second semiconductor layer, there is the 4th opening in the 4th conductive layer, the bottom surface of the 4th opening is the
The surface of two semiconductor layers, and the 4th conductive layer also extends to the 4th surface of insulating layer in effective non-photo-sensing area；Form covering the
The second insulating layer of two conductive layers and full first opening of filling；The second opening is formed in the second insulating layer of effective photosensitive area,
The bottom of second opening is the surface of the second conductive layer；Photosensitive two for forming full second opening of filling and being covered in the second opening
Pole pipe, light sensitive diode also extend to the atop part surface of second insulating layer, and the bottom surface of light sensitive diode is led with second
Electric layer contact；Formed the atop part surface for covering the light sensitive diode, in second insulating layer light sensitive diode side wall with
And the third insulating layer of second insulating layer, there is third opening, the bottom surface of third opening is photosensitive two in third insulating layer
The surface of pole pipe；Forming second insulating layer and during third insulating layer, the 4th conductive layer of covering and filling full the are formed
The insulation system layer of four openings；It is transparent that first is formed on the inner wall of third opening and the third insulating layer in first switch area
Conductive layer；During forming the first transparency conducting layer, the second transparency conducting layer of covering insulation system layer is formed.
In the present embodiment, the insulation system layer includes: the 5th insulating layer and the 6th insulating layer.Correspondingly, forming the
During two insulating layers, the 5th insulating layer of the 4th conductive layer of covering and full 4th opening of filling is formed；Being formed, third is exhausted
During edge layer, the 6th insulating layer of the 5th insulating layer of covering is formed.
In other embodiments, the insulation system layer is single layer structure, correspondingly, in the process for forming second insulating layer
In, form insulation system layer；Alternatively, forming insulation system layer during forming third insulating layer.
In the present embodiment, further includes: the first light blocking layer 280 is formed on the third insulating layer 260 of first switch area S12,
And first light blocking layer 280 be located at first opening on；During forming the first light blocking layer 280, the of S22 in second switch area
The second light blocking layer 281 is formed on six insulating layers 261, and the second light blocking layer 281 is located in the 4th opening.
In one embodiment, after forming the first transparency conducting layer 270 and the second transparency conducting layer 271, first is formed
Light blocking layer 280 and the second light blocking layer 281.In another embodiment, after forming the first light blocking layer 280 and the second light blocking layer 281,
Form the first transparency conducting layer 270 and the second transparency conducting layer 271.
The size of the capacitor is 0.1pF~10pF.The 5th insulating layer 251 on effective non-photo-sensing area S21 and effectively non-
The overall thickness of the 6th insulating layer 261 on photosensitive area S21 is 0.2um~10um.The 5th insulating layer on effective non-photo-sensing area S21
251 with a thickness of 0.1um~5um, the 6th insulating layer 261 on effective non-photo-sensing area S21 with a thickness of 0.1um~5um.
In the present embodiment, capacitor dielectric floor of the insulation system floor as capacitor on effective non-photo-sensing area S21, specifically,
The 5th insulating layer 251 and the 6th insulating layer 261 on effective non-photo-sensing area S21 are superimposed and constitute the capacitor dielectric floor of capacitor.For
Simple process, the 5th insulating layer 251 and second insulating layer 250 are formed simultaneously, the 6th insulating layer 261 and third insulating layer 260
It is formed simultaneously.
In one embodiment, the size of the capacitor is 0.1pF~10pF.In the premise for simplifying manufacture craft as far as possible
Under, so that the capacitance of capacitor is as far as possible close to the capacitance of the equivalent capacity of light sensitive diode 120, for example, the capacitance of capacitor is greater than etc.
In 0.1 times of the capacitance of the equivalent capacity of light sensitive diode 120, and the capacitance of capacitor be less than or equal to light sensitive diode 120 etc.
Imitate 5 times of capacitance of capacitor, in this case, the electrology characteristic of sensitive pixel elements and non-photo-sensing pixel unit just relatively,
The electronic noise of the collected signal of the non-photo-sensing pixel unit just relatively actual electronic noise of sensitive pixel elements, so
The effect that noise is eliminated is with regard to relatively good.
Another embodiment of the present invention also provides a kind of optical sensor circuit, with reference to Fig. 5, comprising: several photosensitive pixel lists
Member 300, the sensitive pixel elements 300 include: light sensitive diode 301；The first switch being electrically connected with light sensitive diode 301
Device 302；Non-photo-sensing pixel unit 400 positioned at the side of several sensitive pixel elements 300, the non-photo-sensing pixel list
Member 400 includes: capacitor 401；The second switch device 402 being electrically connected with the capacitor 401.
In the present embodiment, the first switch device 302 is the first transistor, and the second switch device 402 is second
Transistor.
Anode the first common potential of connection of the light sensitive diode 301；The first transistor has the first source-drain electrode
With the second source-drain electrode, the first source-drain electrode connects the cathode of the light sensitive diode 301.
In one embodiment, the source electrode of the first source and drain extremely the first transistor, the second source and drain extremely the first transistor
Drain electrode；In another embodiment, the drain electrode of the first source and drain extremely the first transistor, the source of the second source and drain extremely the first transistor
Pole.
The capacitor 401 has opposite first capacitor end and the second capacitance terminal, and first capacitor end and the first common potential connect
It connects；Second transistor has third source-drain electrode and the 4th source-drain electrode, and third source-drain electrode is connect with the second capacitance terminal.
In one embodiment, the source electrode of third source and drain extremely second transistor, the 4th source and drain extremely second transistor
Drain electrode；In another embodiment, the drain electrode of third source and drain extremely second transistor, the source of the 4th source and drain extremely second transistor
Pole.
In the present embodiment, several sensitive pixel elements 300 are arranged in several columns；The non-photo-sensing pixel unit 400
In a column or several columns；The column direction of the column direction of the non-photo-sensing pixel unit 400 and several sensitive pixel elements 300 is flat
Row.
In the present embodiment, optical sensor circuit further include: the first data line of several columns 310, the second of one or more columns per page
Data line 410.
In the present embodiment, the second source-drain electrode connects the first data line 310, and the 4th source-drain electrode connects the second data line 410.
The grid of the first transistor and the grid of second transistor connect turntable driving line W.Specifically, in same a line, the
The grid of one transistor and the grid of second transistor are all connected to the turntable driving line W of same a line.
In other embodiments, several sensitive pixel elements are arranged in several rows；The non-photo-sensing pixel unit is in
The line direction of a line or several rows, the non-photo-sensing pixel unit is parallel with the line direction of several sensitive pixel elements.
In the present embodiment, the non-photo-sensing pixel unit 400 is located at the two of several sensitive pixel elements 300
Side.In other embodiments, the non-photo-sensing pixel unit is located at the side of several sensitive pixel elements.
It should be noted that the non-photo-sensing pixel unit 400 is located at the two of several sensitive pixel elements 300
Side refers to: the non-photo-sensing pixel unit 400 is located at the whole two sides of several sensitive pixel elements 300；The non-sense
Light pixel unit is located at the side of several sensitive pixel elements, refers to: if the non-photo-sensing pixel unit is positioned at described
The side of dry sensitive pixel elements entirety.
Another embodiment of the present invention also provides a kind of optical sensor structure, and the difference of the present embodiment and previous embodiment exists
In: the sensitive pixel elements further include: the first additional capacitor, the first additional capacitor are connect with light sensitive diode；The non-sense
Light pixel unit further include: the second additional capacitor, the second additional capacitor and the capacitance connection.About the present embodiment and previous reality
The identical content of example is applied not to be described in detail.
It is schematic diagram on the basis of Fig. 2 in conjunction with reference Fig. 6 and Fig. 7, Fig. 6, Fig. 7 is schematic diagram on the basis of Fig. 3, institute
It states the first conductive layer 210 and is also located at the effective photosensitive area S11 part of the surface of substrate 100, and first on first switch area S12 is conductive
The first conductive layer 210 on 210 and effective photosensitive area S11 of layer is mutually discrete；The first conductive layer 210 on effective photosensitive area S11
Positioned at the bottom of the light sensitive diode 120.
The first conductive layer 210 on effective photosensitive area S11 is covered by the first insulating layer 220 on effective photosensitive area S11.
In conjunction with reference Fig. 6 and Fig. 7, the third conductive layer 211 is also located at 100 effective non-photo-sensing area part S21 table of substrate
Face, and the third on the 100 second switch area S22 of third conductive layer 211 and substrate on the effective non-photo-sensing area S21 of substrate 100 is led
Electric layer 211 is mutually discrete；On the effective non-photo-sensing area S21 of substrate 100, third conductive layer 211 is located at the bottom of the 4th conductive layer 241
Portion.
Third conductive layer 211 on effective non-photo-sensing area S21 is covered by the 4th insulating layer 221 on effective non-photo-sensing area S21
Lid.
First additional capacitor includes: the first conductive layer 210 on effective photosensitive area S11, first on effective photosensitive area S11
The second conductive layer 240 on insulating layer 220 and effectively photosensitive area S11.210 conduct of the first conductive layer on effective photosensitive area
One conductive plate of first additional capacitor, the second conductive layer 240 on effective photosensitive area S11 are additional as described first
Another conductive plate of capacitor, capacitor of first insulating layer 220 as first additional capacitor on effective photosensitive area S11
Dielectric layer.
Second additional capacitor includes: third conductive layer 211 on effective non-photo-sensing area S21, on effective non-photo-sensing area S21
The 4th conductive layer 241 on 4th insulating layer 221 and effectively non-photo-sensing area S21.Third on effective non-photo-sensing area S21 is led
A conductive plate of the electric layer 211 as second additional capacitor, the 4th conductive layer 241 on effective non-photo-sensing area S21 are made
For another conductive plate of second additional capacitor, the 4th insulating layer 221 on effective non-photo-sensing area S21 is as described the
The capacitor dielectric layer of two additional capacitors.
The size of first additional capacitor is 0.1pF~10pF, and the size of the second additional capacitor is 0.1pF~10pF.Effectively
The 4th insulating layer 221 with a thickness of 0.1um~1um, on effective non-photo-sensing area S21 of the first insulating layer 220 on photosensitive area S11
With a thickness of 0.1um~1um.
First transparency conducting layer 270 and the second transparency conducting layer 271 are connected to the first common potential.It is described effective
The third conductive layer 211 of the first conductive layer 400 and effective non-photo-sensing area S21 on photosensitive area S11 is connected to the second common electrical
Position.Second common potential and the first common potential are equal or different.
The effect of first additional capacitor includes: that the first additional capacitor and light sensitive diode are stored jointly and produced by light sensitive diode
Raw photogenerated charge, so that memory capacity improves.
The effect of second additional capacitor includes: under the premise of simplifying manufacture craft as far as possible, so that non-photo-sensing pixel unit
In the second additional capacitor and capacitor total capacitance, the first additional capacitor and light sensitive diode etc. as far as possible close in sensitive pixel elements
Total capacitance of total capacitance of effect capacitor, the second additional capacitor and capacitor is more than or equal to the first additional capacitor and light sensitive diode is equivalent
0.1 times of total capacitance of capacitor, and total capacitance of the second additional capacitor and capacitor is less than or equal to the first additional capacitor and photosensitive two
5 times of total capacitance of pole pipe equivalent capacity.In this case, the electrology characteristic of sensitive pixel elements and non-photo-sensing pixel unit just compares
It is closer to.The electronic noise of the collected signal of non-photo-sensing pixel unit just relatively make an uproar by the actual electronics of sensitive pixel elements
Sound, so the effect that noise is eliminated is with regard to relatively good.
In the present embodiment, on being electrically connected relationship, the first additional capacitor is connected in parallel with light sensitive diode 120, and second
Additional capacitor is connected in parallel with the capacitor.
The present embodiment also provides a kind of forming method of optical sensor structure, referring to the method for previous embodiment, this reality
The difference for applying the method and the method for previous implementation of example is: yet forming the first additional capacitor and the second additional capacitor.Specifically
, the first conductive layer also is formd in the effective photosensitive area part of the surface of substrate, and the first conductive layer in first switch area and have
The first conductive layer imitated on photosensitive area is mutually discrete；After forming light sensitive diode, the first conductive layer on effective photosensitive area is located at
The bottom of the light sensitive diode；Third conductive layer also is formed in the effective non-photo-sensing area part of the surface of substrate, and substrate is effectively non-
The third conductive layer on third conductive layer and substrate second switch area on photosensitive area is mutually discrete；After forming the 4th conductive layer,
In the effective non-photo-sensing area of substrate, third conductive layer is located at the bottom of the 4th conductive layer.
Correspondingly, another embodiment of the present invention also provides a kind of optical sensor circuit, referring to FIG. 8, Fig. 8 is in Fig. 5
On the basis of schematic diagram, the difference of the present embodiment and the circuit of previous implementation is: the sensitive pixel elements further include: first
Additional capacitor 303, the first additional capacitor 303 have opposite third capacitance terminal and the 4th capacitance terminal, third capacitance terminal and photosensitive
The cathode of diode 301 connects, the cathode of third capacitance terminal and the shared light sensitive diode 301 of the first source-drain electrode, the 4th capacitance terminal
Connect the second common potential；Second additional capacitor 403, the second additional capacitor 403 have the 5th opposite capacitance terminal and the 6th electricity
Rong Duan, the 5th capacitance terminal are connect with the second capacitance terminal, and the 5th capacitance terminal and third source-drain electrode share the second capacitance terminal, the 6th capacitor
The second common potential of end connection.
Second common potential and the first common potential are equal or different.
In the present embodiment, the first additional capacitor 303 is connected in parallel with light sensitive diode 301, the second additional capacitor 403 and electricity
Hold 401 to be connected in parallel.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (13)
1. a kind of optical sensor structure characterized by comprising
Substrate；
Fingerprint sensing circuit layer on substrate, the fingerprint sensing circuit layer include: several sensitive pixel elements；Positioned at institute
State the non-photo-sensing pixel unit of the side of several sensitive pixel elements；
The sensitive pixel elements include: light sensitive diode；The first switch device being electrically connected with light sensitive diode；
The non-photo-sensing pixel unit includes: capacitor；The second switch device being electrically connected with the capacitor.
2. optical sensor structure according to claim 1, which is characterized in that the substrate includes photosensitive area and non-photo-sensing
Area, several sensitive pixel elements are located on the photosensitive area, and non-photo-sensing pixel unit is located in the non-photo-sensing area；It is described photosensitive
Area includes effective photosensitive area and first switch area, and light sensitive diode is located on effective photosensitive area, and first switch device is located at first
On switch region；The non-photo-sensing area includes effective non-photo-sensing area and second switch area, and the capacitor is located in effective non-photo-sensing area,
Second switch device is located in second switch area；
The sensitive pixel elements include: the first conductive layer positioned at substrate first switch area part of the surface；Positioned at effectively photosensitive
Area surface and first switch area surface and the first insulating layer for covering the first conductive layer；The first insulating layer positioned at first switch area
First semiconductor layer of part of the surface, and the first semiconductor layer is opposite with the first conductive layer in first switch area；Covering first
Second conductive layer of semiconductor layer, has the first opening in second conductive layer, and the bottom surface of the first opening is the first half
The surface of conductor layer, and the second conductive layer also extends to the first surface of insulating layer of effective photosensitive area；Cover the second conductive layer and
The second insulating layer of full first opening of filling；The second opening in the second insulating layer of effective photosensitive area, the second opening
Bottom is the surface of the second conductive layer；Filling in the second opening and the light sensitive diode that is covered in the second opening, photosensitive two
Pole pipe also extends to the atop part surface of second insulating layer, the bottom surface of light sensitive diode and the second conductive layer contact；The
Three insulating layers, third insulating layer cover the atop part surface of the light sensitive diode, light sensitive diode in second insulating layer
Side wall and second insulating layer have the third opening being located on light sensitive diode, the bottom of third opening in third insulating layer
Surface is the surface of light sensitive diode；First on the inner wall of third opening and the third insulating layer in first switch area
Transparency conducting layer；
The non-photo-sensing pixel unit includes: the third conductive layer positioned at substrate second switch area part of the surface；Positioned at effectively non-
Photosensitive area surface and second switch area surface and the 4th insulating layer for covering third conductive layer；The 4th positioned at second switch area is exhausted
Second semiconductor layer of edge layer part of the surface, and the second semiconductor layer is opposite with the third conductive layer in second switch area；Covering
4th conductive layer of the second semiconductor layer, has the 4th opening in the 4th conductive layer, and the bottom surface of the 4th opening is the second half
The surface of conductor layer, and the 4th conductive layer also extends to the 4th surface of insulating layer in effective non-photo-sensing area；Cover the 4th conductive layer
And the insulation system layer of full 4th opening of filling；Cover the second transparency conducting layer of insulation system layer.
3. optical sensor structure according to claim 2, which is characterized in that the insulation system layer is laminated construction；
The insulation system layer includes: the 5th insulating layer for covering the 4th conductive layer and full 4th opening of filling；Cover the 5th insulating layer
The 6th insulating layer；
Second transparency conducting layer covers the 6th insulating layer.
4. optical sensor structure according to claim 2, which is characterized in that the insulation system layer is single layer structure.
5. optical sensor structure according to claim 2, which is characterized in that the sensitive pixel elements further include: the
One additional capacitor, the first additional capacitor are connect with light sensitive diode；The non-photo-sensing pixel unit further include: the second additional electrical
Hold, the second additional capacitor and the capacitance connection.
6. optical sensor structure according to claim 5, which is characterized in that first conductive layer, which is also located at substrate, to be had
Photosensitive area part of the surface is imitated, and the first conductive layer on the first conductive layer and effective photosensitive area in first switch area mutually divides
It is vertical；The first conductive layer on effective photosensitive area is located at the bottom of the light sensitive diode；
The third conductive layer is also located at the effective non-photo-sensing area part of the surface of substrate, and the third in the effective non-photo-sensing area of substrate is led
Third conductive layer in electric layer and substrate second switch area is mutually discrete；In the effective non-photo-sensing area of substrate, third conductive layer position
In the bottom of the 4th conductive layer.
7. optical sensor structure according to claim 6, which is characterized in that first transparency conducting layer and second is thoroughly
Bright conductive layer is connected to the first common potential；The third of the first conductive layer and effective non-photo-sensing area on effective photosensitive area
Conductive layer is connected to the second common potential；Second common potential and the first common potential are equal or different.
8. optical sensor structure according to claim 2, which is characterized in that further include: positioned at the of first switch area
The first light blocking layer on three insulating layers, and the first light blocking layer is located in the first opening；The 6th insulating layer positioned at second switch area
On the second light blocking layer, and the second light blocking layer be located at the 4th opening on.
9. optical sensor structure according to claim 8, which is characterized in that it is transparent that first light blocking layer is located at first
On conductive layer, and the second light blocking layer is located on the second transparency conducting layer.
10. optical sensor structure according to claim 8, which is characterized in that first light blocking layer is located at first thoroughly
The bottom of bright conductive layer, and the second light blocking layer is located at the second transparency conducting layer bottom.
11. optical sensor structure according to claim 1, which is characterized in that several sensitive pixel elements arrangements
At several columns；The non-photo-sensing pixel unit is in a column or several columns；The column direction of the non-photo-sensing pixel unit and several senses
The column direction of light pixel unit is parallel.
12. optical sensor structure according to claim 1, which is characterized in that several sensitive pixel elements arrangements
At several rows；The non-photo-sensing pixel unit is in a line or several rows, line direction and several senses of the non-photo-sensing pixel unit
The line direction of light pixel unit is parallel.
13. optical sensor structure according to claim 1, which is characterized in that the non-photo-sensing pixel unit is located at institute
State the side of several sensitive pixel elements；Alternatively, the non-photo-sensing pixel unit is located at several sensitive pixel elements
Two sides.
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| CN109545813A (en) * | 2018-12-24 | 2019-03-29 | 上海箩箕技术有限公司 | Optical sensor structure and forming method thereof, optical sensor circuit |
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