CN209088901U - Resonator and semiconductor devices - Google Patents
Resonator and semiconductor devices Download PDFInfo
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- CN209088901U CN209088901U CN201822150667.6U CN201822150667U CN209088901U CN 209088901 U CN209088901 U CN 209088901U CN 201822150667 U CN201822150667 U CN 201822150667U CN 209088901 U CN209088901 U CN 209088901U
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Abstract
The utility model relates to technical field of semiconductors, a kind of resonator and filter are disclosed.The resonator includes substrate；Multilayered structure is formed on the substrate, and the multilayered structure successively includes lower electrode layer, piezoelectric layer and upper electrode layer from the bottom to top；Wherein, it is formed with cavity between the substrate and the multilayered structure, the cavity includes lower semi-cavity under the upper surface of substrate and beyond the upper surface of substrate and to the multilayered structure upper semi-cavity outstanding.Above-mentioned resonator has the cavity of lower semi-cavity and upper semi-cavity by setting, and lower semi-cavity is integrally located under upper surface of substrate, and upper semi-cavity is integrally located on upper surface of substrate, to form a kind of novel resonator structure, and has preferable performance.
Description
Technical field
The utility model relates to technical field of semiconductors, more particularly to resonator and semiconductor devices.
Background technique
Resonator can be used in various electronic applications implementing signal processing function, for example, some cellular phones and its
Its communication device implemented using resonator for transmitting and/or received signal filter.Can according to different application and
Use several different types of resonators, such as film bulk acoustic resonator (FBAR), manifold type resonator filter (SBAR), heap
Stacked bulk acoustic resonator (SBAR), dual bulk acoustic resonator (DBAR) and solid-state installing type resonator (SMR).
Typical acoustic resonator includes top electrode, lower electrode, the piezoelectric material between upper/lower electrode, is located at lower electrode
Following sound reflecting structure and the substrate below sound reflecting structure.Usually by three layers of top electrode, piezoelectric layer, lower electrode material
Expect that the region being overlapped in a thickness direction is defined as the effective coverage of resonator.When the voltage for applying certain frequency between the electrodes
When signal, the inverse piezoelectric effect as possessed by piezoelectric material can generate vertical direction between the upper/lower electrode in effective coverage
The sound wave of propagation, sound wave roundtrip and one between the sound reflecting structure under the interface and lower electrode of top electrode and air
Determine to generate resonance under frequency.
Utility model content
Based on the above issues, the utility model provides a kind of new structural resonator and semiconductor devices.
The first aspect of the utility model embodiment provides a kind of resonator, comprising:
Substrate；
Multilayered structure is formed on the substrate, and the multilayered structure successively includes lower electrode layer, piezoelectric layer from the bottom to top
And upper electrode layer；
Wherein, cavity is formed between the substrate and the multilayered structure, the cavity includes being located at the substrate
Lower semi-cavity under upper surface and beyond the upper surface of substrate and to the multilayered structure upper semi-cavity outstanding.
Optionally, the lower semi-cavity is surrounded by bottom wall and the first side wall, and the bottom wall is whole flat with the substrate surface
Row, the first side wall is the first smooth curved surface that the upper surface of substrate is extended to by the bottom wall edge.
Optionally, first smooth curved surface includes the first surface and the second curved surface of rounding off connection.
Optionally, the vertical section of the first surface in fall parabolic shape, and be located at the bottom wall where plane on；
The vertical section of second curved surface parabolically shape, and be located under the plane where the upper surface of substrate.
Optionally, the curvature of the first smooth curved surface each point is less than the first preset value.
Optionally, the upper semi-cavity is surrounded by the downside of the multilayered structure, the multilayered structure and the upper half
The corresponding part of cavity includes that roof and second sidewall surround, and the second sidewall is to extend to the lining by the ceiling edge
Second smooth curved surface of bottom upper surface.
Optionally, second smooth curved surface includes the third curved surface and the 4th curved surface of rounding off connection.
Optionally, the vertical section of the third curved surface parabolically shape, and be located under the plane where the roof；
The vertical section of 4th curved surface in fall parabolic shape, and be located at the upper surface of substrate where plane on.
Optionally, the curvature of the second smooth curved surface each point is less than the second preset value.
Optionally, the roof is without Mutational part.
The second aspect of the utility model embodiment provides a kind of semiconductor devices, including the utility model embodiment first
Any resonator in aspect.
The beneficial effects of adopting the technical scheme are that the utility model embodiment, under having by setting
The cavity of semi-cavity and upper semi-cavity, and lower semi-cavity is integrally located under upper surface of substrate, upper semi-cavity is integrally located at substrate
On upper surface, to form a kind of novel resonator structure, and there is preferable performance.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model embodiment resonator；
Fig. 2 is the enlarged diagram of A in Fig. 1；
Fig. 3 is the performance test figure of the utility model embodiment resonator.
Specific embodiment
In order to which technical problem to be solved in the utility model, technical solution and beneficial effect is more clearly understood, with
Lower combination accompanying drawings and embodiments, the present invention will be further described in detail.It should be appreciated that specific reality described herein
It applies example to be only used to explain the utility model, is not used to limit the utility model.
Utility model will be further described in detail below with reference to the attached drawings and specific embodiments.
Referring to Fig. 1, an embodiment of the present invention provides a kind of resonator, including substrate 100 and multilayered structure 200.
Multilayered structure 200 is formed on substrate 100, and multilayered structure 200 successively includes lower electrode layer 203,202 and of piezoelectric layer from the bottom to top
Upper electrode layer 201.Wherein, cavity 300 is formed between substrate 100 and multilayered structure 200, cavity 300 includes being located at substrate
Lower semi-cavity 301 under 100 upper surfaces and beyond 100 upper surface of substrate and to the upper semi-cavity outstanding of multilayered structure 200
302。
Referring to Fig. 1, in one embodiment, lower semi-cavity 301 is surrounded by bottom wall 101 and the first side wall 102, and bottom wall 101 is whole
Body is parallel with the surface of substrate 100, and the first side wall 102 is the first circle that 100 upper surface of substrate is extended to by the edge of bottom wall 101
Sliding curved surface.
Wherein, bottom wall 101 and the first side wall 102 are the surface wall of substrate 100.And the first side wall 102 is first round and smooth
Curved surface can guarantee the performance of resonator cavities, not mutate.
Referring to fig. 2, in one embodiment, first smooth curved surface may include the first surface of rounding off connection
1021 and second curved surface 1022.Wherein, the first surface 1021 and the second curved surface 1022 of rounding off connection refer to first surface
1021 and second junction between curved surface 1022 without mutation, and both first surface 1021 and the second curved surface 1022 are also for without prominent
The curved surface of change, so as to guarantee the performance of resonator cavities.Wherein, substrate 100 is by many crystal (such as silicon crystal)
Composition, no mutation refers to that the excessive property to influence resonator is not answered in the gap between each crystal at the first smooth curved surface
Energy.
For example, the vertical section of first surface 1021 can in falling parabolic shape, and be located at the plane where bottom wall 101 it
On；The vertical section of second curved surface 1022 can parabolically shape, and be located under the plane where 100 upper surface of substrate.First
Curved surface 1021 and the round and smooth connection of the second curved surface 1022.Certainly, first surface 1021 and the second curved surface 1022 can also be other shapes
The curved surface of shape, can reach the gap between each crystal at the first smooth curved surface does not influence the performance of resonator.
In one embodiment, it is integrally smooth for the first smooth curved surface, can is 1021 each point of the first smooth curved surface
Curvature less than the first preset value.First preset value may be set according to actual conditions, to reach at the first smooth curved surface
Each crystal between gap do not influence resonator performance purpose.In order to guarantee that multilayered structure mechanical characteristic and electricity are special
Property, the curvature of transitional region smooth curved surface wants as small as possible, and in the case where sacrificial layer thickness is certain, curvature as small as possible is wanted
It asks length of transition zone to increase, will increase the area when resonator, therefore to optimize the curvature and length of transition zone of transition region.It is excellent
Choosing, the thickness of cavity 300 can be 1 μm, and length of transition zone is controlled at 3 μm to 5 μm, in the multilayered structure of transition region growth
It can satisfy resonator requirement.Length of transition zone is the length on the dotted line direction shown in Fig. 1 of the first side wall 102.
Referring to Fig. 1, in one embodiment, upper semi-cavity 302 can be surrounded by the downside of multilayered structure 200, described more
The downside part corresponding with upper semi-cavity 302 of layer structure 200 includes roof 201 and second sidewall 202, second sidewall 202
For the second smooth curved surface for extending to 100 upper surface of substrate by 201 edge of roof.
Wherein, roof 201 and second sidewall 202 are that the downside of multilayered structure 200 is faced the wall and meditated.And second sidewall 202 is the
Two smooth curved surfaces can guarantee the performance of resonator cavities, not mutate.
Referring to fig. 2, in one embodiment, the second smooth curved surface may include 2021 He of third curved surface of rounding off connection
4th curved surface 2022.Wherein, the third curved surface 2021 and the 4th curved surface 2022 of rounding off connection refer to 2021 He of third curved surface
Junction is without mutation between 4th curved surface 2022, and both third curved surface 2021 and the 4th curved surface 2022 are also the song without mutation
Face, so as to guarantee the performance of resonator cavities.Wherein, it is said from the angle of crystal, substrate 100 is by many crystal (examples
Such as silicon crystal) composition, it is excessive humorous to influence that no mutation refers to that the gap between each crystal at the second smooth curved surface is not answered
The performance of vibration device.
For example, the vertical section of third curved surface 2021 can parabolically shape, and be located under the plane where roof 201；
The vertical section of 4th curved surface 2022 in fall parabolic shape, and be located at 100 upper surface of substrate where plane on.Certainly, third
Curved surface 2021 and the 4th curved surface 2022 can also be other shapes, can reach between each crystal at the first smooth curved surface
Gap does not influence the performance of resonator.
In one embodiment, the curvature of 2021 each point of the second smooth curved surface is less than the second preset value.For the second preset value
It may be set according to actual conditions, to reach the property that the gap between each crystal at the second smooth curved surface does not influence resonator
The purpose of energy.
Further, roof 201 is also without Mutational part.Mutation described herein and aforementioned mutation are consistent, from the angle of crystal
Degree says that multilayered structure 200 is also to be made of many crystal, between no mutation refers between each crystal at roof 201
Gap does not answer the excessive performance to influence resonator.
In above embodiments, substrate 100 can be silicon substrate or the substrate of other materials, not limit this.
It is the performance test data of the resonator in the utility model embodiment referring to Fig. 3, Fig. 3.The resonator of the structure,
It is respectively 2.393GHz and 2.457GHz, series resonance Q value 1513, parallel resonance Q value in series resonance and parallel resonance frequency
1079, electromechanical coupling factor 5.2%.
Above-mentioned resonator has the cavity 300 of lower semi-cavity 301 and upper semi-cavity 302, and lower semi-cavity by being arranged
301 are integrally located under 100 upper surface of substrate, and upper semi-cavity 302 is integrally located on 100 upper surface of substrate, to form one
The novel resonator structure of kind, and there is preferable performance.
A kind of semiconductor devices, including any of the above-described kind of resonator is also disclosed in the utility model embodiment, has above-mentioned humorous
Beneficial effect possessed by vibration device.For example, the semiconductor devices can be filter.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Made any modifications, equivalent replacements, and improvements etc., should be included in the utility model within the spirit and principle of utility model
Protection scope within.
Claims (11)
1. a kind of resonator characterized by comprising
Substrate；
Multilayered structure is formed on the substrate, the multilayered structure from the bottom to top successively include lower electrode layer, piezoelectric layer and on
Electrode layer；
Wherein, cavity is formed between the substrate and the multilayered structure, the cavity includes being located at table on the substrate
Lower semi-cavity under face and beyond the upper surface of substrate and to the multilayered structure upper semi-cavity outstanding.
2. resonator according to claim 1, which is characterized in that the lower semi-cavity is surrounded by bottom wall and the first side wall,
The bottom wall is whole parallel with the substrate surface, and the first side wall is to extend to table on the substrate by the bottom wall edge
First smooth curved surface in face.
3. resonator according to claim 2, which is characterized in that first smooth curved surface includes what rounding off connected
First surface and the second curved surface.
4. resonator according to claim 3, which is characterized in that the vertical section of the first surface in fall parabolic shape,
And on the plane where the bottom wall；
The vertical section of second curved surface parabolically shape, and be located under the plane where the upper surface of substrate.
5. resonator according to claim 2, which is characterized in that the curvature of the first smooth curved surface each point is less than first
Preset value.
6. resonator according to claim 1, which is characterized in that the upper semi-cavity by the multilayered structure downside
It surrounds, multilayered structure part corresponding with the upper semi-cavity includes that roof and second sidewall surround, the second sidewall
For the second smooth curved surface for extending to the upper surface of substrate by the ceiling edge.
7. resonator according to claim 6, which is characterized in that second smooth curved surface includes what rounding off connected
Third curved surface and the 4th curved surface.
8. resonator according to claim 7, which is characterized in that the vertical section of the third curved surface parabolically shape, and
Under the plane where the roof；
The vertical section of 4th curved surface in fall parabolic shape, and be located at the upper surface of substrate where plane on.
9. resonator according to claim 6, which is characterized in that the curvature of the second smooth curved surface each point is less than second
Preset value.
10. according to the described in any item resonators of claim 6 to 9, which is characterized in that the roof is without Mutational part.
11. a kind of semiconductor devices, which is characterized in that including the described in any item resonators of claims 1 to 10.
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| CN201822150667.6U CN209088901U (en) | 2018-12-20 | 2018-12-20 | Resonator and semiconductor devices |
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| CN201822150667.6U CN209088901U (en) | 2018-12-20 | 2018-12-20 | Resonator and semiconductor devices |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110868195A (en) * | 2019-10-24 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Radio frequency switch filter assembly and semiconductor device |
| CN110868179A (en) * | 2019-10-11 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Resonator packaging system |
| CN110868180A (en) * | 2019-10-12 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Semiconductor package and manufacturing method thereof |
| CN110868178A (en) * | 2019-10-11 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Resonator packaging system |
| CN110867509A (en) * | 2019-10-11 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Acoustic resonator packaging structure |
| CN110868190A (en) * | 2019-10-11 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Acoustic resonator packaging structure and preparation method thereof |
| CN111082777A (en) * | 2019-12-31 | 2020-04-28 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with gap electrode as bottom electrode, filter and electronic device |
| WO2020155192A1 (en) * | 2019-01-28 | 2020-08-06 | 中国电子科技集团公司第十三研究所 | Resonator and semiconductor device |
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2018
- 2018-12-20 CN CN201822150667.6U patent/CN209088901U/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020155192A1 (en) * | 2019-01-28 | 2020-08-06 | 中国电子科技集团公司第十三研究所 | Resonator and semiconductor device |
| US11664783B2 (en) | 2019-01-28 | 2023-05-30 | The 13Th Research Institute Of China Electronics | Resonator and semiconductor device |
| CN110868179A (en) * | 2019-10-11 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Resonator packaging system |
| CN110868178A (en) * | 2019-10-11 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Resonator packaging system |
| CN110867509A (en) * | 2019-10-11 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Acoustic resonator packaging structure |
| CN110868190A (en) * | 2019-10-11 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Acoustic resonator packaging structure and preparation method thereof |
| CN110868190B (en) * | 2019-10-11 | 2024-04-16 | 中国电子科技集团公司第十三研究所 | Acoustic resonator packaging structure and preparation method thereof |
| CN110868178B (en) * | 2019-10-11 | 2024-04-16 | 中国电子科技集团公司第十三研究所 | Resonator packaging system |
| CN110868180A (en) * | 2019-10-12 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Semiconductor package and manufacturing method thereof |
| CN110868195A (en) * | 2019-10-24 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Radio frequency switch filter assembly and semiconductor device |
| CN111082777A (en) * | 2019-12-31 | 2020-04-28 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with gap electrode as bottom electrode, filter and electronic device |
| WO2021135019A1 (en) * | 2019-12-31 | 2021-07-08 | 诺思(天津)微系统有限责任公司 | Bulk acoustic resonator with bottom electrode as gap electrode, and filter and electronic device |
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