CN208874055U - A kind of low-power controllable semiconductor laser driving circuit - Google Patents

A kind of low-power controllable semiconductor laser driving circuit Download PDF

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Publication number
CN208874055U
CN208874055U CN201821667270.8U CN201821667270U CN208874055U CN 208874055 U CN208874055 U CN 208874055U CN 201821667270 U CN201821667270 U CN 201821667270U CN 208874055 U CN208874055 U CN 208874055U
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driving circuit
voltage
power
semiconductor laser
low
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褚庆革
黄骏
周晓军
姜爱鹏
刘志民
李骊
王行
盛赞
李朔
杨淼
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Nanjing Huajie Imi Software Technology Co Ltd
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Nanjing Huajie Imi Software Technology Co Ltd
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Abstract

The utility model discloses a kind of low-power controllable semiconductor laser driving circuit, MCU module output pwm signal, pwm signal is converted DC voltage by passive filter, DC voltage is exported to driving circuit driving LD after error amplifier amplifies and is shone, the optical signal of PD acquisition LD is simultaneously converted into voltage signal, after voltage follower is isolated, exports to the inverting input terminal of error amplifier and carry out close loop negative feedback control.The utility model does negative feedback control using the end PD electric signal, and with the mutation that this inhibits environmental factor to cause, stable laser power achievees the purpose that the duty ratio by adjusting PWM to adjust laser power.It is not only convenient for controlling, and do not have to complicated logic control to achieve the effect that stable laser power, reduces operand.

Description

A kind of low-power controllable semiconductor laser driving circuit
Technical field
The utility model relates to semiconductor laser, especially a kind of low-power controllable semiconductor laser driving circuit.
Background technique
As shown in Figure 1, LD (Laser Diode, semiconductor laser) and PD (Photo Diode, photodiode) are Transceiver structure, when adding positive phase voltage to LD, Light-Emitting Diode shines, and wherein PD receiving unit is divided, and is converted into monitoring Electric current, which can be used to carry out negative feedback control to LD, to achieve the purpose that stable LD output power.The light function of LD Rate P is the important evidence that the system of semiconductor laser is designed with the changing rule of Injection Current I.Work as semiconductor laser Device adds sufficiently large positive phase voltage on its PN junction, and the Injection Current of laser gradually increases, defeated when Injection Current is sufficiently large Light power sharply increases, and the characteristics of luminescence also can great changes will take place, generate laser concussion, electric current at this time is known as threshold value Electric current, it is electric current corresponding to the P-I knee of characteristic.When to semiconductor laser Injection Current, both ends can be generated just Phase voltage, laser Static performance characteristic are mainly the characteristic curve for holding voltage and Injection Current, i.e. V-I characteristic curve.LD's P-I-V curve is as shown in Figure 2.
The energisation mode of LD generally use electric current injection form, when Injection Current be greater than threshold current when, radiant power with The increase of electric current and promptly increase.But since the performance of various lasers has nuance, and with the increasing for using the time Long, performance can also change, therefore, if only relying on the Injection Current of change LD completely to adjust the mode of the optical power of its output Corresponding error can be generated.
Also, as shown in Figure 2, existing LD is increased with environment temperature, and the temperature drift of LD is big, output power changing rule It is non-linear, therefore it is serious, not easy to control to be also easy to produce mutation, error, to impact to using, can not achieve and adjusts light in real time Power, it is difficult to meet the scene demand being precisely controlled.
Utility model content
Purpose of utility model: in view of the above-mentioned drawbacks of the prior art, the utility model is intended to provide a kind of low-power Controllable semiconductor laser driving circuit.
Technical solution: a kind of low-power controllable semiconductor laser driving circuit, including MCU (Microcontroller Unit, micro-control unit) module, passive filter, error amplifier, driving circuit, LD, PD and voltage follower;
MCU module passes through adjusting PWM for exporting PWM (Pulse Width Modulation, pulsewidth modulation) signal The duty ratio of signal controls output voltage values, and passive filter is used to convert DC voltage for pwm signal, passive filter Output end is connected with the normal phase input end of error amplifier, and the output end of error amplifier connects driving circuit, and driving circuit is used It shines in driving LD, PD is used to acquire the optical signal of LD and is converted into voltage signal, and voltage follower is used to be isolated PD output Voltage signal, the output end of voltage follower are connected with the inverting input terminal of error amplifier.
Spread of voltage causes LD intermittence to shine when initializing in order to prevent, and then is possible to the case where damaging eyesight, Preferably, MCU module is also connected with power-on protective circuit, and the power-on protective circuit is used to initialize season LD in MCU module It is in an off state.
Preferably, power-on protective circuit include with MCU it is direct-connected power on protective resistance, power on protective resistance drop-down ground connection.
Preferably, the resistance value for powering on protective resistance is 499k Ω.
Preferably, passive filter uses RC (Resistor-Capacitor, resistance-capacitor) filter circuit.
Preferably, the RC filter circuit includes the filter resistance of 15k Ω and the filter capacitor of 1UF.
Preferably, voltage follower is single channel operational amplifier circuit, the normal phase input end of PD connection voltage follower, voltage follow Device output end is connected with its inverting input terminal.
Preferably, the resistance of 1k Ω is connected between voltage follower output end and error amplifier inverting input terminal, accidentally The capacitor of 0.1UF is connected between the output end and inverting input terminal of poor amplifier, error amplifier, voltage follower are selected LM358 chip.
Preferably, driving circuit includes driving circuit triode, and the base stage of driving circuit triode is connected with driving circuit First resistor, the emitter of driving circuit triode are connected with driving circuit second resistance, the emitter of driving circuit triode LD is connected, the through-flow stated range minimum of driving circuit triode is not less than 1A.
Preferably, the pwm signal of MCU module output is 10kHz.
The utility model has the advantages that the utility model utilizes MCU in order to inhibit semiconductor laser output power to be mutated with environment temperature Pwm signal is issued, is converted into DC voltage input through passive filter, and PD converts optical signal into electric signal, access electricity Pressure follower is isolated, and is inputted put-into error amplifier together with DC voltage, is done negative feedback control using the end PD electric signal. If laser light intensity increases suddenly, the error amount of error amplifier will reduce, so that driving current reduces.If laser The light intensity of device reduces suddenly, and the error amount of error amplifier will increase, so that driving current increases.With this inhibit environment because The mutation that element causes, stable laser power achieve the purpose that the duty ratio by adjusting PWM to adjust laser power.No Only convenient for control, and the logic control for not having to complexity can achieve the effect that stable laser power, reduce operand.
Detailed description of the invention
Fig. 1 is the transceiver structural schematic diagram of LD, PD;
Fig. 2 is the P-I-V curve graph of LD;
Fig. 3 is the structural schematic diagram of the utility model;
Fig. 4 is the main electrical block diagram of the utility model;
Fig. 5 is the utility model voltage follower circuit schematic diagram;
Fig. 6 is LD, PD circuit diagram of the utility model.
Specific embodiment
The technical program is described in detail below by a most preferred embodiment and in conjunction with attached drawing.
As shown in figure 3, present embodiments providing a kind of low-power controllable semiconductor laser driving circuit, including MCU (Microcontroller Unit, micro-control unit) module, passive filter, power-on protective circuit, error amplifier, driving Circuit, LD, PD and voltage follower;
As Figure 4-Figure 6, MCU module is used to export PWM (Pulse Width Modulation, pulsewidth modulation) signal, And the duty ratio by adjusting pwm signal controls output voltage values, passive filter is used to convert direct current for pwm signal Pressure, the output end of passive filter are connected with the normal phase input end of error amplifier, and power-on protective circuit is used at the beginning of MCU module Beginningization season LD is in an off state, and the output end of error amplifier connects driving circuit, and driving circuit is used to that LD to be driven to shine, PD is used to acquire the optical signal of LD and is converted into voltage signal, and voltage follower is used to be isolated the voltage signal of PD output, voltage The output end of follower is connected with the inverting input terminal of error amplifier.
In the present embodiment MCU module export pwm signal be 10kHz waveform, MCU include but is not limited to single-chip microcontroller, FPGA, ARM etc. adjust output voltage by adjusting the duty ratio of PWM waveform.
Passive filter uses RC (Resistor-Capacitor, resistance-capacitor) filter circuit, including filter resistance R1 and filter capacitor C1.R1 is 15k Ω in the present embodiment, and the PWM waveform of C1 1UF, 10kHz pass through this circuit, is converted into DC voltage.
Power-on protective circuit is the resistance direct-connected with MCU in the present embodiment, and protective resistance use is powered in the present embodiment The connection type of ground connection is pulled down, resistance value can according to need self-setting, and principle is not influence the filtering effect of RC filter circuit Fruit, therefore the resistance value being arranged is typically much deeper than the resistance value of filter resistance in RC filter circuit, the filter resistance in the present embodiment is 15k Ω, the resistance value for powering on protective resistance R2 is 499k Ω, not only can guarantee that laser was closed state in power up, but also not shadow Ring RC filter circuit.Its position in circuit is arranged after passive filter.It also can be set at it in the specific implementation His position can also be used the other structures such as electric protection chip substitution and power on protective resistance.
Voltage follower can be realized by single channel operational amplifier circuit, the normal phase input end of PD connection voltage follower, voltage Follower output end is connected with its inverting input terminal.PD is converted into current signal by receiving optical signal, by voltage follower, Play the role of isolation, connects a R4 in figure between PD and voltage follower and pull down to ground, R4 is 680 Ω.
Error amplifier is realized by the integrating circuit of amplifier, by comparing the voltage for controlling voltage and PD feedback, is passed through Integrating circuit amplifies this error amount, so that driving circuit driving laser shines.Wherein voltage follower output end and error Be connected with resistance R3 between amplifier inverting input terminal, resistance value is 1k Ω, the output end and inverting input terminal of error amplifier it Between be connected with the capacitor C2 of 0.1UF.Error amplifier in the present embodiment is LM358_1, voltage follower LM358_2, is missed Poor amplifier, voltage follower select LM358 chip, error amplifier can also be merged with voltage follower function one It is realized in a chip.
Driving circuit includes driving circuit triode, and the base stage of driving circuit triode is connected with the first electricity of driving circuit Resistance, the emitter of driving circuit triode are connected with driving circuit second resistance, and the emitter of driving circuit triode connects LD, The through-flow stated range minimum of driving circuit triode is not less than 1A.Driving circuit triode VT1 selects SS8050 in the present embodiment, Driving circuit first resistor is 510 Ω, and driving circuit second resistance is 4.7 Ω.
The present embodiment additionally provides a kind of driving method of above-mentioned low-power controllable semiconductor laser driving circuit, MCU Module output pwm signal, the duty ratio that MCU module adjusts pwm signal waveform change the driving voltage of LD, initialized in MCU Cheng Zhong, power-on protective circuit enable LD in an off state, and pwm signal is converted DC voltage, DC voltage by passive filter Output shines to driving circuit driving LD after error amplifier amplifies, and the optical signal of PD acquisition LD is simultaneously converted into voltage signal, After voltage follower is isolated, exports to the inverting input terminal of error amplifier and carry out close loop negative feedback control.
In whole system, by changing the duty ratio of PWM waveform, to change control voltage, if laser light intensity Increase suddenly, the error amount of error amplifier will reduce, so that driving current reduces.If the light intensity of laser subtracts suddenly Small, the error amount of error amplifier will increase, so that driving current increases.The above is only the preferred implementations of the utility model Mode without departing from the principle of this utility model, can also be done for those skilled in the art Several improvements and modifications out, these improvements and modifications also should be regarded as the protection scope of the utility model.

Claims (10)

1. a kind of low-power controllable semiconductor laser driving circuit, which is characterized in that including MCU module, passive filter, mistake Poor amplifier, driving circuit, LD, PD and voltage follower;
The MCU module is used for output pwm signal, and the duty ratio by adjusting pwm signal controls output voltage values, passive filter Wave device is used to convert DC voltage, the normal phase input end phase of the output end and error amplifier of passive filter for pwm signal Even, the output end of error amplifier connects driving circuit, and for driving circuit for driving LD to shine, PD is used to acquire the optical signal of LD And it is converted into voltage signal, voltage follower is used to be isolated the voltage signal of PD output, the output end and error of voltage follower The inverting input terminal of amplifier is connected.
2. low-power controllable semiconductor laser driving circuit according to claim 1, which is characterized in that the MCU mould Block is also connected with power-on protective circuit, and the power-on protective circuit is used in an off state in MCU module initialization season LD.
3. low-power controllable semiconductor laser driving circuit according to claim 2, which is characterized in that described to power on guarantor Protection circuit include with MCU it is direct-connected power on protective resistance, power on protective resistance drop-down ground connection.
4. low-power controllable semiconductor laser driving circuit according to claim 3, which is characterized in that upper electric protection electricity The resistance value of resistance is 499k Ω.
5. low-power controllable semiconductor laser driving circuit according to claim 1, which is characterized in that the passive filter Wave device uses RC filter circuit.
6. low-power controllable semiconductor laser driving circuit according to claim 5, which is characterized in that the RC filtering Circuit includes the filter resistance of 15k Ω and the filter capacitor of 1UF.
7. low-power controllable semiconductor laser driving circuit according to claim 1, which is characterized in that the voltage with It is single channel operational amplifier circuit, the normal phase input end of PD connection voltage follower, voltage follower output end and its anti-phase input with device End is connected.
8. low-power controllable semiconductor laser driving circuit according to claim 1, which is characterized in that voltage follower The resistance of 1k Ω, the output end and anti-phase input of error amplifier are connected between output end and error amplifier inverting input terminal The capacitor of 0.1UF is connected between end, error amplifier, voltage follower select LM358 chip.
9. low-power controllable semiconductor laser driving circuit according to claim 1, which is characterized in that the driving electricity Road includes driving circuit triode, and the base stage of driving circuit triode is connected with driving circuit first resistor, three pole of driving circuit The emitter of pipe is connected with driving circuit second resistance, and the emitter of driving circuit triode connects LD, driving circuit triode Through-flow stated range minimum be not less than 1A.
10. low-power controllable semiconductor laser driving circuit according to claim 1, which is characterized in that the MCU mould The pwm signal of block output is 10kHz.
CN201821667270.8U 2018-10-15 2018-10-15 A kind of low-power controllable semiconductor laser driving circuit Active CN208874055U (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110369160A (en) * 2019-06-25 2019-10-25 深圳市四方电气技术有限公司 Centrifuge driver protects circuit
CN111628407A (en) * 2020-05-22 2020-09-04 索尔思光电(成都)有限公司 Low-power-consumption APC control circuit and method for adaptive laser forward voltage
CN114498290A (en) * 2022-04-14 2022-05-13 武汉博激世纪科技有限公司 Semiconductor laser therapeutic instrument control system and method
WO2022258029A1 (en) * 2021-06-11 2022-12-15 华为技术有限公司 Photoelectric assembly, light source pool, photoelectric switching device, and control method for photoelectric assembly

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110369160A (en) * 2019-06-25 2019-10-25 深圳市四方电气技术有限公司 Centrifuge driver protects circuit
CN111628407A (en) * 2020-05-22 2020-09-04 索尔思光电(成都)有限公司 Low-power-consumption APC control circuit and method for adaptive laser forward voltage
WO2022258029A1 (en) * 2021-06-11 2022-12-15 华为技术有限公司 Photoelectric assembly, light source pool, photoelectric switching device, and control method for photoelectric assembly
CN114498290A (en) * 2022-04-14 2022-05-13 武汉博激世纪科技有限公司 Semiconductor laser therapeutic instrument control system and method

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