CN208872266U - It is a kind of for detecting the detection device of the pattern of backside of wafer - Google Patents
It is a kind of for detecting the detection device of the pattern of backside of wafer Download PDFInfo
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- CN208872266U CN208872266U CN201821535715.7U CN201821535715U CN208872266U CN 208872266 U CN208872266 U CN 208872266U CN 201821535715 U CN201821535715 U CN 201821535715U CN 208872266 U CN208872266 U CN 208872266U
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Abstract
The utility model provides a kind of for detecting the detection device of the pattern of backside of wafer, wherein detection device includes backside of wafer detection device, fringe region sucker and central area sucker；Backside of wafer detection device is located at below backside of wafer to be arranged in parallel with wafer；Fringe region sucker appears backside of wafer central area for adsorbing backside of wafer fringe region；Central area sucker is for adsorbing backside of wafer central area, and the horizontal cross-section of central area sucker is not more than backside of wafer central area.It can get the specific pattern of backside of wafer, accurately judge position and the size of the impurity of backside of wafer, reduce production cost, improve production efficiency, save human resources and improve product quality.
Description
Technical field
The utility model belongs to semiconductor integrated circuit field, is related to a kind of for detecting the detection of the pattern of backside of wafer
Equipment.
Background technique
In semiconductor integrated circuit field, circuit pattern in semiconductor integrated circuit usually uses photoetching process
It prepares, photoetching process has always been considered as the step of being most critical in IC manufacturing, needs in entire technical process
It is used multiple times, there is important influence to the quality of product.
Photoetching process is a complicated process, mainly comprises the steps that and film to be etched is formed on the substrate first
Layer, reuses glue spreader, and (Coating) photoresist is coated in film layer to be etched, and passes through exposure machine for light by having
The mask plate irradiation of certain figure makes it expose (Exposure) on a photoresist, is then shown using developer solution to photoresist
Shadow (Developing), thus by photoetching agent pattern is formed in the pattern transfer to photoresist in mask plate, finally in photoresist
(Etch) technique is performed etching to film layer to be etched under the protection of pattern, so that photoetching agent pattern is transferred to film to be etched
In layer, graphical film layer obtains circuit pattern.Photoetching process has very high requirement to the back side flatness of wafer, if wafer
Back side flatness is too poor, will lead to exposure stage and is deteriorated to the vacuum suction effect of wafer, causes to move back piece；Even if wafer is not moved back
Piece, the out-of-flatness of backside of wafer will also result in the defocus of the exposing patterns in out-of-flatness region, exposing patterns caused to be distorted.Existing skill
In art, there is no the special inspection for backside of wafer flatness before exposing wafer, it only could when to exposing wafer
Knowledge of result.There are the wafers of defocus to require to do over again for the wafer or exposing patterns for moving back piece, causes board time and material
The waste of material, while extending the ETCD estimated time of commencing discharging out of wafer.
Therefore the impurity of backside of wafer will cause: 1) reducing the flatness of wafer；2) wafer moves back piece and does over again；3) increase
Add production cost；4) production efficiency is reduced；5) waste of human resources.It is necessary to provide a kind of for detecting the shape of backside of wafer
The detection device of looks, timely early warning crystalline substance carry on the back problematic wafer, notify operator to take corresponding measure in advance, avoid back side band
There is the wafer of impurity to enter subsequent technique to cause the above problem.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide one kind for detecting wafer back
The detection device of the pattern in face avoids the back side from entering subsequent technique with the wafer of impurity for detecting the impurity of backside of wafer.
In order to achieve the above objects and other related objects, the utility model provides a kind of for detecting the pattern of backside of wafer
Detection device, the wafer includes backside of wafer central area and the backside of wafer for surrounding the backside of wafer central area
Fringe region, the detection device include:
Backside of wafer detection device is arranged in parallel below the backside of wafer with the wafer；
Fringe region sucker for adsorbing the backside of wafer fringe region, and appears the backside of wafer central area；
Central area sucker, for adsorbing the backside of wafer central area, and the level of the central area sucker is cut
Face is not more than the backside of wafer central area.
Optionally, the backside of wafer detection device includes:
Laser provides light beam；
Spatial filter filters the light beam；
Beam expander expands the range through the filtered light beam of the spatial filter；
The light beam after beam expander expansion is converted into linearly polarized light by the polarizer；
The linearly polarized light is converted into the reflected beams by beam splitter, the reflected beams through objective lens entrance to backside of wafer,
And after the reflection of the backside of wafer, the beam splitter is back to by the object lens and is converted into transmitted light beam；
The transmitted light beam is generated horizontal shear capacity by shearing generator；
The transmitted light beam for generating horizontal shear capacity is generated constant phase difference by the wave plate of λ/4；
The transmitted light beam is become the consistent interfering beam of direction of vibration by analyzer；
The interfering beam with constant phase difference is formed polarization interference image by image-forming objective lens；
The polarization interference image is converted into electric signal by photodetector.
Optionally, the range of the stability of the wavelength for the light beam that the laser provides is less than or equal to 10-3nm。
Optionally, the range of the light intensity error of the photodetector is less than 2%.
Optionally, the backside of wafer detection device further includes the piezoelectric ceramics for adjusting the angle of the analyzer.
Optionally, the fringe region sucker includes one of fixed and mobile；The central area sucker packet
It includes one of fixed and mobile.
Optionally, the fringe region sucker includes N number of top " coupling type " stabilizer blade interconnected, wherein N be greater than
Natural number equal to 2；N number of " coupling type " stabilizer blade includes the contact portion being in contact with the backside of wafer fringe region, and
The contact site is in same level.
Optionally, the longitudinal section pattern of described " coupling type " stabilizer blade includes one in " L " font, " V " font and "U" shaped
Kind or combination.
Optionally, the method for operation of the fringe region sucker includes one of rotary and parallel-moving type or combination.
Optionally, the method for operation of the central area sucker includes one of rotary and parallel-moving type or combination.
As described above, the detection device of the pattern for detecting backside of wafer of the utility model, has below beneficial to effect
Fruit: by backside of wafer detection device, fringe region sucker and central area sucker, accurately to be detected to backside of wafer,
The specific pattern of backside of wafer is obtained, position and the size of the impurity of backside of wafer are accurately judged, to be conducive to: 1) to crystalline substance
The impurity at the circle back side is accurately handled, and the cleanliness and flatness of backside of wafer are improved；2) backside of wafer is timely feedbacked
Information improves the judgement of engineer；3) judge defect in exposure process/defocus generation area rapidly, rise convenient for finding out problem
Ground.Therefore, production cost can be reduced, production efficiency is improved, save human resources and improves product quality.
Detailed description of the invention
Fig. 1 is shown as the flow diagram of the detection method of the backside of wafer in the utility model.
Fig. 2 is shown as the structural schematic diagram of the pattern of the detection backside of wafer central area in the utility model.
The structure that Fig. 3 is shown as another fringe region sucker suction backside of wafer fringe region in the utility model is shown
It is intended to.
Fig. 4 is shown as structural representation when fringe region sucker and central area sucker transfer wafer in the utility model
Figure.
Fig. 5 is shown as the structural schematic diagram of the pattern of the detection backside of wafer fringe region in the utility model.
Fig. 6 is shown as the flow diagram of the method for the coating photoresist in the utility model.
Fig. 7 is shown as the work structuring signal when detection backside of wafer central area of the detection device in the utility model
Figure.
Component label instructions
100 wafers
110 impurity
201 lasers
202 spatial filters
203 beam expanders
204 polarizers
205 beam splitters
206 object lens
207 shearing generators
The wave plate of 208 λ/4
209 analyzers
210 image-forming objective lens
211 photodetectors
300 beam Propagation routes
400 fringe region suckers
500 central area suckers
401,501 rotating operation mode
402,502 translation operation mode
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to FIG. 1 to FIG. 7.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model is only shown with related component in the utility model rather than when according to actual implementation in schema then
Component count, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind
Become, and its assembly layout kenel may also be increasingly complex.
As shown in Figure 1, the utility model provides a kind of detection method of backside of wafer, comprising the following steps:
Wafer and detection device are provided；Wherein, the wafer includes backside of wafer central area and the encirclement wafer
The backside of wafer fringe region in back center region, the detection device include backside of wafer detection device, fringe region sucker
And central area sucker；The backside of wafer detection device is located at below the backside of wafer to be arranged in parallel with the wafer；Institute
Fringe region sucker is stated for adsorbing the backside of wafer fringe region, and appears the backside of wafer central area；In described
Heart district domain sucker is for adsorbing the backside of wafer central area, and the horizontal cross-section of the central area sucker is no more than described
Backside of wafer central area；
The pattern of the backside of wafer is detected by the detection device；It include: by the fringe region sucker suction
The backside of wafer fringe region, and detect by the backside of wafer detection device pattern in the crystal circle center region；With
And by backside of wafer central area described in the central area sucker suction, and detected by the backside of wafer detection device
The pattern of the backside of wafer fringe region.
The utility model then passes through the crystalline substance by backside of wafer fringe region described in the fringe region sucker suction
Circle back side detection device is detected with the pattern to the crystal circle center region appeared；It is inhaled by the central area sucker
The attached backside of wafer central area, then by the backside of wafer detection device to the crystal round fringes region appeared
Pattern detected, to detect the pattern of backside of wafer described in full wafer step by step, and will not be to the front of the wafer
And side causes to damage.
As the further embodiment of the embodiment, the pattern for detecting the backside of wafer fringe region is located at described in detection
Before or after the pattern of backside of wafer central area.
Specifically, in most cases, wafer need to be adsorbed by workbench, and the wafer is usual due in manufacture of semiconductor
With the region for protruding from the workbench, therefore in the utility model, preferably directly adsorbed using fringe region sucker first
The backside of wafer fringe region for protruding from the workbench, detects backside of wafer central area pattern, then passes through
The backside of wafer central area that wafer described in the central area sucker suction has been detected, to appear the wafer side
The crystal round fringes area topographies are detected in edge region, so that it is divided into the full wafer pattern that two steps obtain the backside of wafer,
And processing step can be reduced, reduce the risk of the wafer fragment.
As the further embodiment of the embodiment, the fringe region sucker include fixed and movable type in one
Kind, the method for operation of the fringe region sucker includes one of rotary and parallel-moving type or combination；It inhales the central area
Disk include it is one of fixed and mobile, the method for operation of the fringe region sucker include rotary and parallel-moving type in
A kind of or combination.The suction type of the fringe region sucker and the central area sucker includes vacuum suction and Electrostatic Absorption
One of.
Specifically, as shown in figures 2 and 5, providing wafer 100 and detection device.The detection device includes having object lens
206 backside of wafer detection device, and the object lens 206 are conducive to focus the beam onto the back side of the wafer 100.The crystalline substance
The back side of circle 100 includes impurity 110.Fringe region sucker 400 adsorbs the backside of wafer fringe region of the wafer 100,
Central area sucker 500 adsorbs the backside of wafer central area, and the horizontal cross-section of the central area sucker 500 is not more than
The range of the backside of wafer central area, the backside of wafer fringe region and the backside of wafer central area is not made herein
Limitation.When the fringe region sucker 400 and the central area sucker 500 use fixed, the backside of wafer detection
Device need to be using movable type, so that having displacement between the wafer 100 and the backside of wafer detection device, to obtain
The back side pattern of the wafer 100.When the fringe region sucker 400 and the central area sucker 500 are using movable type,
Its move mode may include that one of rotary and parallel-moving type or combination illustrate the fringe region and inhale such as Fig. 2 and Fig. 5
The rotating operation mode 401,501 and translation operation mode 402,502 of disk 400 and the central area sucker 500.The rotation
The speed for transporting row is related to the processing capacity of the backside of wafer detection device；The move distance of the translation operation is according to institute
The range for stating backside of wafer fringe region and the backside of wafer central area is set, herein with no restriction.The present embodiment
In, the preferably described fringe region sucker 400 and the central area sucker 500 are all made of movable type, to avoid to accurate
The movement of the more demanding backside of wafer detection device is spent, and the fringe region sucker 400 and the central area are inhaled
The method of operation of disk 500 is all made of the mode of rotatably progress synchronous with parallel-moving type, in order to improve detection efficiency.The edge
The suction type of region sucker 400 and the central area sucker 500 includes one of vacuum suction and Electrostatic Absorption, can root
According to specifically being selected, herein with no restriction.
As the further embodiment of the embodiment, the fringe region sucker 400 and the central area sucker 500 are also
Moving up and down on vertical direction can be carried out, in order to when focusing, avoid the wafer more demanding to precision
The movement of back side detection device.
As the further embodiment of the embodiment, the fringe region sucker 400 includes that N number of top is interconnected
" coupling type " stabilizer blade, wherein N is the natural number more than or equal to 2；N number of " coupling type " stabilizer blade includes and the backside of wafer
The contact portion that fringe region is in contact, and the contact site is in same level.The longitudinal section shape of " coupling type " stabilizer blade
Looks include " L " font, " V " one of font and "U" shaped or combination.
Specifically, illustrating the fringe region sucker 400 of different-shape, " coupling type " branch such as Fig. 2 and Fig. 3
The contact portion of foot has a horizontal plane, passes through the backside of wafer fringe region of the horizontal plane and the wafer 100
It is in contact, to support and adsorb the wafer 100, number, pattern and the distribution of " coupling type " stabilizer blade are not made excessively herein
Limitation, is preferably combined by equally distributed " coupling type " stabilizer blade of 3 circumferential directions and is formed, in order to improve described " coupling type " stabilizer blade
Adsorb the stability of the wafer 100.The projection of the figure that N number of " coupling type " stabilizer blade inward flange is surrounded in the horizontal plane
More than or equal to the surface of the central area sucker 500, to be formed and can be accommodated in described on the inside of N number of " coupling type " stabilizer blade
The accommodation space of heart district domain sucker 500, so that the fringe region sucker 400 be avoided to turn with the central area sucker 500
It collides during moving the wafer 100, makes fragmented risk, such as Fig. 4.
Such as Fig. 6, the utility model additionally provides a kind of method of coating photoresist, comprising the following steps:
Wafer, the positive coating photoresist of Yu Suoshu wafer are provided；
Using the detection method of above-mentioned backside of wafer, the pattern of the backside of wafer is detected；
According to the pattern of the backside of wafer detected, the impurity of the backside of wafer is removed.
The detection method of backside of wafer is applied in the technique of coating photoresist by the utility model, thus detectable described
Wafer is after coating photoresist, before exposure, accurately to be detected to the backside of wafer, obtains the tool of the backside of wafer
Bodily form looks accurately judge position and the size of the impurity of the backside of wafer, to be conducive to: 1) to the backside of wafer
Impurity is accurately handled, and the cleanliness and flatness of the backside of wafer are improved；2) backside of wafer is timely feedbacked
Information improves the judgement of engineer, in order to be adjusted to board, reduces damaged products range；3) judge rapidly exposed
Defect/defocus generation area in journey, convenient for finding out problem cradle.Therefore, production cost can be reduced, improve production efficiency, section
About human resources and raising product quality.
As the further embodiment of the embodiment, the method for removing the impurity of the backside of wafer includes polishing and clear
Wash one of method or combination.
Specifically, being carried on the back by the specific pattern of the backside of wafer detected by the detection device to the wafer
Region locating for the impurity in face is targetedly ground and/or is cleaned, and to effectively remove the impurity, improves production effect
Rate obtains the wafer having compared with high-cleanness, high and flatness, then carries out next procedure using conventional exposure method, from
And product quality is improved, it avoids in exposure technology, defocus phenomenon occurs.
It further include using institute after the impurity for removing the backside of wafer as the further embodiment of the embodiment
The step of detection method of backside of wafer detects the backside of wafer is stated, in order to which determination is ground and/or cleans
The flatness and cleanliness of the wafer afterwards are carried out after repeating detection using the detection method of the backside of wafer, if described
The step of backside of wafer still contains the impurity, can be removed the impurity of the backside of wafer again, so that it is guaranteed that the crystalline substance
The flatness and cleanliness at the circle back side.The specific number of repetition the step of detecting and removing the impurity and the wafer
The judgment criteria of flatness and cleanliness, those skilled in the art can set according to specific requirements, not limit excessively herein
System.
As shown in fig. 7, the utility model also provides the detection in a kind of detection method that can be applied to above-mentioned backside of wafer
Equipment, wherein the wafer 100 includes backside of wafer central area and the wafer back for surrounding the backside of wafer central area
Face fringe region.The detection device includes: positioned at the backside of wafer lower section and wafer backside of wafer disposed in parallel
Detection device；For adsorbing the backside of wafer fringe region, and the fringe region for appearing the backside of wafer central area is inhaled
Disk；And central area sucker, for adsorbing the backside of wafer central area, and the horizontal cross-section of the central area sucker
No more than the backside of wafer central area.
Specifically, the backside of wafer detection device includes: laser 201, spatial filter 202, beam expander 203, rises
Inclined device 204, beam splitter 205, object lens 206, shearing generator 207, the wave plate of λ/4 208, analyzer 209, image-forming objective lens 210 and light
Electric explorer 211.The laser 201 includes in gas laser, solid state laser, semiconductor laser and dye laser
One kind, to provide light beam；The spatial filter 202 emits the laser 201 for filtering the light beam
The interference light of non-targeted wavelength filters out in the light beam, retains the light of the optical wavelength of needs；The beam expander 203, which expands, to be retained
The range of the light beam to get off；To be converted into line inclined by the light beam after the beam expander 203 expansion for the polarizer 204
Shake light；The linearly polarized light is converted into the reflected beams by the beam splitter 205, and the reflected beams are incident on crystalline substance through object lens 206
The circle back side, and after the reflection of the backside of wafer, so that the reflected beams have the pattern for representing the backside of wafer
Information is back to the beam splitter 205 by the object lens 206 and is converted into transmitted light beam；The shearing generator 207 is by institute
It states transmitted light beam and generates horizontal shear capacity, and through the wave plate of the λ/4 208, the transmitted light beam for generating horizontal shear capacity is produced
Raw constant phase difference forms polarization interference light via the analyzer 209, and the angle of the analyzer 209 can be by piezoelectric ceramics
Device is adjusted；The image-forming objective lens 210 are to form polarization interference image；The photodetector 211 is by the polarization
Interference image is converted into electric signal, wherein beam Propagation route 300 is refering to Fig. 6.
The utility model passes through the backside of wafer detection device, fringe region sucker and the center in the detection device
Region sucker is able to satisfy the detection of the backside of wafer using total optical path lateral shearing interference method, obtains the backside of wafer
Pattern.This method and the wafer 100 are non-contact, avoid causing the wafer 100 that damage, phase shift interference range be big, device
The advantages of being simple and convenient to operate.
As the further embodiment of the embodiment, the range of the stability of the wavelength for the light beam that the laser provides is small
In equal to 10-3nm；The photodetector includes one of CCD and CMOS, and the light intensity error of the photodetector
Range is less than 2%, to improve the precision of the backside of wafer detection device.
In conclusion the detection device of the pattern for detecting backside of wafer of the utility model, has below beneficial to effect
Fruit: by backside of wafer detection device, fringe region sucker and central area sucker, accurately to be detected to backside of wafer,
The specific pattern of backside of wafer is obtained, position and the size of the impurity of backside of wafer are accurately judged, to be conducive to: 1) to crystalline substance
The impurity at the circle back side is accurately handled, and the cleanliness and flatness of backside of wafer are improved；2) backside of wafer is timely feedbacked
Information improves the judgement of engineer；3) judge defect in exposure process/defocus generation area rapidly, rise convenient for finding out problem
Ground.Therefore, production cost can be reduced, production efficiency is improved, save human resources and improves product quality.So this is practical new
Type effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (10)
1. a kind of for detecting the detection device of the pattern of backside of wafer, the wafer includes backside of wafer central area and packet
Enclose the backside of wafer fringe region of the backside of wafer central area, which is characterized in that the detection device includes:
Backside of wafer detection device is arranged in parallel below the backside of wafer with the wafer；
Fringe region sucker for adsorbing the backside of wafer fringe region, and appears the backside of wafer central area；
Central area sucker, for adsorbing the backside of wafer central area, and the horizontal cross-section of the central area sucker is not
Greater than the backside of wafer central area.
2. according to claim 1 for detecting the detection device of the pattern of backside of wafer, it is characterised in that: the wafer
Back side detection device includes:
Laser provides light beam；
Spatial filter filters the light beam；
Beam expander expands the range through the filtered light beam of the spatial filter；
The light beam after beam expander expansion is converted into linearly polarized light by the polarizer；
The linearly polarized light is converted into the reflected beams by beam splitter, and the reflected beams are passed through through objective lens entrance to backside of wafer
After the reflection of the backside of wafer, the beam splitter is back to by the object lens and is converted into transmitted light beam；
The transmitted light beam is generated horizontal shear capacity by shearing generator；
The transmitted light beam for generating horizontal shear capacity is generated constant phase difference by the wave plate of λ/4；
The transmitted light beam is become the consistent interfering beam of direction of vibration by analyzer；
The interfering beam with constant phase difference is formed polarization interference image by image-forming objective lens；
The polarization interference image is converted into electric signal by photodetector.
3. according to claim 2 for detecting the detection device of the pattern of backside of wafer, it is characterised in that: the laser
The range of the stability of the wavelength for the light beam that device provides is less than or equal to 10-3nm。
4. according to claim 2 for detecting the detection device of the pattern of backside of wafer, it is characterised in that: the photoelectricity
The range of the light intensity error of detector is less than 2%.
5. according to claim 2 for detecting the detection device of the pattern of backside of wafer, it is characterised in that: the wafer
Back side detection device further includes the piezoelectric ceramics for adjusting the angle of the analyzer.
6. according to claim 1 for detecting the detection device of the pattern of backside of wafer, it is characterised in that: the edge
Region sucker includes one of fixed and mobile；The central area sucker include fixed and movable type in one
Kind.
7. according to claim 1 for detecting the detection device of the pattern of backside of wafer, it is characterised in that: the edge
Region sucker includes N number of top " coupling type " stabilizer blade interconnected, wherein N is the natural number more than or equal to 2；It is described N number of
" coupling type " stabilizer blade includes the contact portion being in contact with the backside of wafer fringe region, and the contact site is in same level
Face.
8. according to claim 7 for detecting the detection device of the pattern of backside of wafer, it is characterised in that: described " to hang
The longitudinal section pattern of hook-type " stabilizer blade includes " L " font, " V " one of font and "U" shaped or combination.
9. according to claim 1 for detecting the detection device of the pattern of backside of wafer, it is characterised in that: the edge
The method of operation of region sucker includes one of rotary and parallel-moving type or combination.
10. according to described in claim 1 for detecting the detection device of the pattern of backside of wafer, it is characterised in that: the center
The method of operation of region sucker includes one of rotary and parallel-moving type or combination.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111293052A (en) * | 2020-03-05 | 2020-06-16 | 长江存储科技有限责任公司 | Wafer detection method and detection equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111293052A (en) * | 2020-03-05 | 2020-06-16 | 长江存储科技有限责任公司 | Wafer detection method and detection equipment |
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