CN2088698U - Wide band all direction danger radiacmeter - Google Patents

Wide band all direction danger radiacmeter Download PDF

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Publication number
CN2088698U
CN2088698U CN 90215644 CN90215644U CN2088698U CN 2088698 U CN2088698 U CN 2088698U CN 90215644 CN90215644 CN 90215644 CN 90215644 U CN90215644 U CN 90215644U CN 2088698 U CN2088698 U CN 2088698U
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China
Prior art keywords
line
power density
omni
probe
density indicator
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Expired - Lifetime
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CN 90215644
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Chinese (zh)
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刘占武
洪霓玉
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No41 Inst Ministry Of Machine-Building And Electronics Industry
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No41 Inst Ministry Of Machine-Building And Electronics Industry
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Priority to CN 90215644 priority Critical patent/CN2088698U/en
Publication of CN2088698U publication Critical patent/CN2088698U/en
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model relates to a wide band all direction danger radiating meter used for monitoring the field intensity of radio frequency and microwave radiation source. As a novel structural all direction probe, high resistance transmission lines and a digital power density indicator are adopted, not only the isotropy monitoring performance is enhanced, but also the technology manufacture is convenient. Cost is reduced, manufacture yield and product reliability are enhanced, numeric display is visual and operation is convenient. The utility model comprises a wide band all direction probe, a handle, the digital power density indicator, a cable assembly, recorder revolution outlet lines, etc.

Description

Wide band all direction danger radiacmeter
What the utility model was related is a kind of wideband omnidirectional radiation risk meter that is used for monitoring radio frequency and microwave radiation, is the EMC(electromagnetic compatibility) a kind of near field measurement instrument in the technical field.
As everyone knows, the biological effect of radio frequency and microwave radiation can cause tissue to come to harm, and this danger is potential, is difficult for the directly perception for people institute.Although at present a unified radioactive exposure safety limit standard is not arranged as yet in the world, studies show that actual dangerous level usually is that people self are difficult to aware.
Along with the Electrical and Electronic technology rapid development, the radiation leakage that various Electrical and Electronic equipment produce also causes phase mutual interference each other, limits giving full play to of its performance, makes precise decreasing, the reliability variation.
For various radiation sources are monitored, adopt a kind of device that is called the dangerous meter of microwave radiation to come the power density values of space radiation field is measured in the world usually.The key of this near field measurement instrument is the field intensity of high frequency sensor.It can adopt two kinds of different working mechanisms.The one, adopt antenna, for example dipole antenna with highly electrically conductive surfaces; The 2nd, adopt thin-film electro stopband line with wide band absorption characteristic.The former makes frequency band narrower because of its susceptibility to frequency, and frequency of operation can only arrive several kilo-mega cycles per seconds, and antenna can change field structure to the interference of tested electromagnetic field, increases measuring error.The latter since the resistive band line to absorption of electromagnetic wave, reflection and diffuse transmission influence that it produced are minimum, can regard as electromagnetic wave is " transparent ", do not disturb so can not produce tested electromagnetic field, and the small amount of radiation energy that the resistive band line is absorbed does not become with frequency, can reach very wide frequency band, so this quasi-instrument mostly adopts thin-film electro stopband line as sensing element in recent years.The dangerous meter of at present external microwave radiation, it is on-chip that its resistive band line normally is produced on a kind of very thin flexible media.Its shortcoming is that manufacturability is poor, makes difficulty, in use damage easily, thereby poor reliability; In addition, also, increased the complicacy of technological process greatly, cost is risen because it is at the tow sides of substrate hydatogenesis resistive band line all; In addition, in order to reduce the loop that the resistive band line constituted and the coupling (promptly only limiting to field coupled) in magnetic field to greatest extent, this just requires substrate thickness, and very thin (typical thickness only is 2 mils, be about 0.05mm), thereby be difficult to adopt rigid media material (for example Chang Yong microwave ceramics) as substrate material, because this can cause substrate cracked, yield rate will be very low.Obviously adopt this flexible substrate material to exist significant disadvantages, make troubles for the manufacturing and the use of wideband omnidirectional radiation risk meter.
The purpose of this utility model is the wideband omnidirectional radiation risk meter of a kind of new structure of designing for the shortcoming that overcomes existing these radiation risk meters, isotropic monitoring performance in this radiation risk of further raising, reduce the difficulty of manufacturing process simultaneously, improve the quality and reliability of fabrication yield and product.
The utility model is a kind of wideband omnidirectional radiation risk meter, and its composition comprises wideband omnidirectional probe, handle, digital power density indicator, jumper assembly and register output line etc.
Probe is to be made of polyfoam protective cover and omni-directional sensor, the sensing element that sensor is settled by three mutually orthogonals, a brace, a composition such as taper fixed support.Three sensing elements are structurally identical, are the thin film hybrid ICs that utilizes the microwave integrated technique to make on ceramic substrate.Comprising the conductive junction point and the thin-film electro stopband line that are deposited on by vacuum evaporation and sputtering technology on the ceramic substrate, schottky diode chip, RC matching network and filter capacitor etc.
On substrate, two resistive band line close proximity parallel to each other also are connected in series by conductive junction point.There is a little gap at the center of a resistive band line therein, and the both sides, gap is manufactured with two conductive junction points, uses for installing diode chip for backlight unit and RC matching network thereon.
Resistive band line on three sensing elements is communicated with external circuit by contact and connects mutually, is joined by two contacts in brace centre and the high resistant transmission line in the handle at last, and the amplification indicating member is delivered in measured signal.Three sensing elements and handle become identical angle and orthogonal, and its projection is mutually hexagonal angle and evenly distributes in perpendicular to the plane of Handle axis, and symmetry fully structurally is to guarantee the isotropy requirement.
In sensing element, adopting junction capacity Cj, very little (the 8 millimere-wave band schottky diode chips of Cj<0.08pf) are as radio frequency-direct current conversion element, make it to have the very high frequency of operation upper limit, (the frequency of operation upper limit of schottky diode depends primarily on the numerical value of its junction capacity Cj).
The RC matching network is made up of a sheet resistance and two thin-film ceramics capacitances in series, is connected in parallel on the diode two ends as the current-dividing network of schottky diode.Its impedance is complementary with the variation with frequency of the variation of frequency and thin-film electro stopband line impedence in operating frequency range, makes the radio-frequency voltage that is added in the diode two ends remain unchanged basically, thereby obtains extremely wide frequency response.That is to say, at the high band of frequency range, in the resistive band line in dominant resistance characteristic and the current-dividing network resistance characteristic of advantage be complementary; In the low-frequency range of frequency range, in the resistive band line in dominant capacitance characteristic and the current-dividing network dominant electric capacity be complementary; In the middle transition frequency range, their composite attribute is followed variation mutually with certain degree of accuracy each other, makes to remain certain intrinsic standoff ratio in whole operating frequency range, and the radio-frequency voltage that keeps being added on the diode does not become with frequency basically.
In order to prevent to produce interference, three sections high resistant transmission line potsherds in handle, have been installed to tested.It is the thin-film electro stopband line that utilizes two close proximity each other parallel to each other that vacuum coating technology makes on ceramic substrate, and its resistance and distributed capacitance constitute a low pass distribution filter, the Radio Frequency Interfere of responding on can the filtering line.In addition, at high resistant transmission line two ends a filter capacitor is arranged respectively also.
The power density indicator comprises low drift direct current amplifier, three ingredients of high-precision a/d converter and low-power consumption LCD.Faint direct current signal process in the power density indicator by probe output is amplified and the A/D conversion, converts corresponding digital voltage to, drives the power density values that LCD demonstrates tested.
As previously mentioned, because three sensing elements are connected in series mutually, therefore, the detection output voltage that is produced by each sensing element carries out algebraic addition in the closed-loop path, its synthetic result has represented the synthetic of the component of measured point, space electric field on three directions of mutually orthogonal, the polarization of its numerical value and electric wave and arrival direction are irrelevant, and only depend on the size of measured point field intensity.Because diode operation is in the square-law characteristic part, the gained result is the power flux-density of measured point radiation field.After calibration, show measured power density value reading by LCD.
Summarize in fact, the utility model has the advantages that:
1. the substrate material of sensing element adopts the rigid media material, the aluminium oxide microwave ceramics that promptly adopts high-purity (recommending to adopt more than 99.5%) high-compactness is as substrate material, it has good rigidly, low, the advantages of high strength of the porosity, can produce high-quality thin-film electro stopband line thereon, improve stability and reliability, overcome and adopted the manufacturability difference that flexible film substrate made exists and the shortcoming of poor reliability in the past;
2. the resistive band line all is produced on the same surface of ceramic substrate rather than is produced on the tow sides, can simplify technological process greatly and reduce requirement to the substrate material surface appearance, thereby reduce cost, and reduces the technology manufacture difficulty.
3. all be positioned on the same surface of substrate owing to thin-film electro stopband line, can two resistive band lines parallel to each other are as close as possible to reduce the coupling in its anchor ring that is constituted and magnetic field, reduce measuring error.And substrate can increase thickness with the raising structural strength by actual needs, thereby improves yield rate, further reduces cost.
4. adopt the low barrier Schottky diode chip of zero-bias as radio frequency-direct current conversion element rather than adopt thermopair, thus have highly sensitive, the advantage that the response time is fast;
5. three sensing elements that adopt in the sensing head are structurally identical, have interchangeability.In probe assembling and setting process, can also obtain good symmetry, with the requirement of further raising isotropic characteristics by meticulous apolegamy.Thereby compare adopt the monoblock flexible film substrate made to make sensing element to have greater flexibility, be convenient to put into practice in the production practices, reduce and make difficulty, thereby obtain more performance and economic benefit in the past;
6. the schottky diode chip adopts junction capacity Cj very little (the 8 millimere-wave band tube cores of Cj<0.08pf) making probe have the very high frequency of operation upper limit.
7. the high resistant transmission line is made up of three sections identical high resistant line potsherds, and its substrate material and high resistant line manufacture craft are identical with the probe sensing element, and design and manufacture process are simplified, and helps reducing cost.
8. the direct current signal of probe output is converted to digital signal voltage through amplifying the back by biproduct somatotype high-precision a/d converter, drive the power density values that LCD directly shows tested, reading is directly perceived, accurate, has low in energy consumption simultaneously, advantage easy to use is easy to carry;
Description of drawings:
Fig. 1 is an actual embodiment wideband omnidirectional radiation risk of the present utility model meter equivalent circuit diagram;
Fig. 2 is the wideband omnidirectional probe exploded view that radiation risk meter shown in Figure 1 adopts;
The sensing element wiring layout of Fig. 3 for adopting in the probe shown in Figure 2;
Fig. 4 is the RC matching network schematic cross-section in the sensing element shown in Figure 3;
The resistor disc structural drawing of Fig. 5 for adopting in the sensing element shown in Figure 3 has the resistive band line and the conductive junction point figure that utilize vacuum coating technology to make in the above;
The brace of Fig. 6 for adopting in the probe shown in Figure 2 is used for three sensing elements being connected to each other and being communicated with external circuit.
In the Wide band all direction danger radiacmeter equivalent circuit diagram that Fig. 1 provides, (3) are probe; (4) be handle; (2) be the power density indicator; (15) be dc amplifier; (16) be the A/D converter; (17) be LCD. In probe (3) (referring to Fig. 1 and Fig. 2), three identical sensing elements (8), (9) and (10) are enclosed among the front shroud (5) and back cover (6) of being made by foamed plastics, the gap distribution such as hexagonal angle are pressed in three sensing element its projections in perpendicular to the aximuthpiston of Handle axis, be fixed on above the conical support (7), guarantee that by conical support three sensing elements are mutually orthogonal and become identical angle with Handle axis, so that the isotropism response to be provided. On conical support (7), also be fixed with pressing plate (11) and brace (13) (referring to Fig. 2 and Fig. 6), by the conductive junction point on the brace (13) three sensing elements are connected in series mutually, two contacts (18), (19) by the brace centre are communicated with its head and the tail two ends respectively with external circuit simultaneously, are connected to the high resistant transmission line in the handle (4). Nut (12) is arranged on handle (4), be used for conical support (7) is fixed on the handle (4).
In sensing element (8), (9) and (10), consist of a loop (referring to Fig. 1 and Fig. 3) by resistive band line (30), (31), (32) and Schottky diode (45). Be parallel with the RC network that is composed in series by electric capacity (34), resistance (33) and electric capacity (35) at diode (45) two ends, be used for carrying out impedance matching, the radio-frequency voltage that is added in the Schottky diode two ends in whole operating frequency range is remained unchanged basically. Filter capacitor (36) and conductive junction point (20), (21) are arranged in each protection loop the inner, border. Resistive band line (31) on the sensing element is identical with (32) resistance, absorbs electromagnetic radiation energy by them and field coupling. Resistance value ratio resistive band line (31) and (32) of resistive band line (30) are much bigger, mainly play the DC channel effect.
In handle (4), the resistive band line (39), (40), (41) and (42), (43), (44) that are made by vacuum coating technology form two parallel high resistant transmission lines, are parallel with filter capacitor (37) and (38) at its two ends. The high resistant transmission line is communicated with probe (3) and power density indicator (2) respectively by plug connector (26), (27) and (28), (29).
Referring to Fig. 1 and Fig. 6. Loop on the sensing element (8) is communicated with loop contact (20) on brace central contact (18) and the sensing element (9) respectively by the corresponding contact (20) on contact (20), (21) and the brace (13), (21). Contact on the sensing element (9) is communicated with loop contact (20) on the sensing element (10) by brace (13). Loop contact (21) on the sensing element (10) is communicated with central contact (19) on the brace (13). Therefore, the loop on three sensing elements is connected to connect and is consisted of the loop. Central contact (18) on the brace (13) and (19) are then connected with the high resistant transmission line in the handle (4) by plug connector (26) and (27), through resistive band line (39), (40), (41) and (42), (43), (44), be communicated with power density indicator (2) by plug connector (28) and (29) again, with probe output be added to that the power density indicator amplifies, conversion and demonstration.
Embodiment:
Adopt the design philosophy and the new structure of wideband omnidirectional radiation risk meter described in the utility model, produced a kind of practical model machine, its monitoring performance can be operated in 1MHz to the frequency range more than the 26GHz, when 40GHz, still very high sensitivity can be kept, good isotropy monitoring can be realized the space radiation field.And the difficulty of technology manufacturing descends greatly, is very beneficial for improving finished product rate and reliability and has obtained satisfied effect.

Claims (3)

1, a kind of wideband omnidirectional radiation risk meter that is used for monitoring radio frequency and microwave radiation source, it is by probe, handle, the power density indicator, jumper, register output line and battery component are formed, and it is characterized in that the omni-directional sensor in the probe component is by three mutually orthogonal arrangements of identical sensing element, and connecting mutually by special brace forms the closed-loop path; High resistant transmission line in handle component is to be in series by several sections same high resistant line potsherds, and high resistant line potsherd is by two close proximity that are produced on the potsherd, and thin-film electro stopband line parallel to each other and conductive junction point thereof constitute; The power density indicator is to have adopted the digital power density indicator of being made up of direct current amplifier, A/D transducer and LCD.
2, bandwidth omni-directional radiation risk meter according to claim 1 is characterized in that three identical sensing elements in the omni-directional sensor all are on the same surface of the thin-film electro stopband line that close proximity is the parallel to each other alumina ceramic substrate material that is produced on rigidity.
3, according to claim 1,2 described bandwidth omni-directional radiation risk meters, it is characterized in that the radio frequency-direct current conversion element in the omni-directional sensor adopts Schottky barrier diode, it is to utilize the method for welding that diode chip for backlight unit directly is connected across on the little gap of resistive band line center.
CN 90215644 1990-12-30 1990-12-30 Wide band all direction danger radiacmeter Expired - Lifetime CN2088698U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 90215644 CN2088698U (en) 1990-12-30 1990-12-30 Wide band all direction danger radiacmeter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 90215644 CN2088698U (en) 1990-12-30 1990-12-30 Wide band all direction danger radiacmeter

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CN2088698U true CN2088698U (en) 1991-11-13

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CN 90215644 Expired - Lifetime CN2088698U (en) 1990-12-30 1990-12-30 Wide band all direction danger radiacmeter

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105372508A (en) * 2015-11-11 2016-03-02 中国电子科技集团公司第四十一研究所 Electric field radiation broadband detector based on distributed thin film resistor loading and design method thereof
CN105676007A (en) * 2016-02-17 2016-06-15 北京森馥科技股份有限公司 Dipole antenna and omnidirectional probe employing same
CN109709405A (en) * 2018-12-24 2019-05-03 贵州航天计量测试技术研究所 Mechanism of High Power Microwave Pulse signal strength test device under a kind of MODEL OVER COMPLEX TOPOGRAPHY

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105372508A (en) * 2015-11-11 2016-03-02 中国电子科技集团公司第四十一研究所 Electric field radiation broadband detector based on distributed thin film resistor loading and design method thereof
CN105372508B (en) * 2015-11-11 2018-10-02 中国电子科技集团公司第四十一研究所 A kind of electric field radiation broadband detector and its design method based on distributed thin film resistor loaded
CN105676007A (en) * 2016-02-17 2016-06-15 北京森馥科技股份有限公司 Dipole antenna and omnidirectional probe employing same
CN109709405A (en) * 2018-12-24 2019-05-03 贵州航天计量测试技术研究所 Mechanism of High Power Microwave Pulse signal strength test device under a kind of MODEL OVER COMPLEX TOPOGRAPHY

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