CN208862175U - 5G millimeter wave filters broad-band antenna - Google Patents
5G millimeter wave filters broad-band antenna Download PDFInfo
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- CN208862175U CN208862175U CN201821776796.XU CN201821776796U CN208862175U CN 208862175 U CN208862175 U CN 208862175U CN 201821776796 U CN201821776796 U CN 201821776796U CN 208862175 U CN208862175 U CN 208862175U
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Abstract
The utility model discloses a kind of 5G millimeter waves to filter broad-band antenna, including following six layer structure from top to down: a pair of of metal patch and the first metal band；A pair of second metal band；A pair of of third metal band；Open circuit metal band；Offer the metal the earth of a pair of of line of rabbet joint and a through-hole；Microstrip line, wherein, a pair of of metal patch constitutes electric dipole, first metallization VIA, third metallization VIA and the second metal band constitute the side wall of magnetic dipole, and the first metal band, third metal band, the second metallization VIA, the 4th metallization VIA, microstrip line constitute feed structure.The utility model takes into account the beamwidth of antenna, filtering characteristic and low section AiP framework, bandwidth covers multiple 5G millimeter wave frequency bands, filtering is realized by lower sideband radiation zero, and realizes that magnetic dipole and feeder line reach low Section Design effect by metallization VIA and metal band Hybrid connections.
Description
Technical field
The utility model relates to field of microwave communication more particularly to a kind of 5G millimeter wave to filter broad-band antenna.
Background technique
Compared to fourth generation mobile communication technology, the 5th third-generation mobile communication (5G) technology is in rate, time delay, connection number and shifting
It will all be greatly improved in dynamic property, and 5G millimeter wave has better rate capability.It is in Chinese 5G millimeter wave working frequency range
24.75-27.5GHz and 37-42.5GHz, if a broad-band antenna (band is wider than 53%) can cover the two frequency ranges simultaneously,
Antenna will be reduced and connect the quantity of transmitting-receiving subassembly, is conducive to the miniaturization of 5G mobile terminal.Broadband millimeter with filtering characteristic
Influence of the out of band signal to system can be effectively reduced in wave antenna, and reduces demand pressure of the system to filter to a certain extent
Power.Meanwhile the millimeter wave antenna for meeting AiP (Antenna in Package, encapsulating antenna) framework is conducive to raising system collection
At and feasibility.It therefore meets the broadband millimeter-wave filter antenna of AiP framework has important meaning to the development of 5G mobile terminal
Justice.
There are several millimeter wave broadband antenna technologies, such as super skin antenna technology, usually more patches by intercoupling at present
Piece constitutes radiating surface, but its bandwidth is generally 28%, can not cover 5G millimeter wave two-band, and super surface texture may surpass
Half-wavelength is crossed, is had an impact for a group battle array arrangement.Another technology is electromagnetic dipole antenna, under air dielectric structural environment,
Opposite bandwidth of operation can achieve requirements, and the integrated electromagnetic dipole antenna of substrate does not have also relevant report to can achieve bandwidth to want
It asks, bandwidth is only 28% or so；Integrated its section of electromagnetic dipole antenna of substrate traditional simultaneously is relatively high, is unfavorable for
AiP architecture design, and do not have the effect of frequency low side and high-end out-of-band radiation zero point formation filtering.
Utility model content
The technical problem to be solved by the present invention is to, for the prior art above-mentioned some antennas there are bandwidth not
Disadvantage enough, antenna element electric size is larger, there are section higher the shortcomings that being unfavorable for AiP framework for some antennas, and not
Have the defect of filtering characteristic, a kind of 5G millimeter wave filtering broad-band antenna is provided.
The technical scheme adopted by the utility model to solve the technical problem is as follows: constructing a kind of 5G millimeter wave filtering broadband day
Line characterized by comprising
Be set to the first layer structure of first layer medium substrate upper surface, including arranged side by side a pair of of metal patch and
The first metal band between the pair of metal patch；
The second layer structure being set between first layer medium substrate lower surface and second layer medium substrate upper surface, including
The second metal band of a pair arranged side by side corresponding with the pair of metal patch, second metal band is via passing through the
The one of one layer of medium substrate arranges the first metallization VIA and connects with corresponding metal patch；
The third layer structure being set between second layer medium substrate lower surface and third layer medium substrate upper surface, including
A pair of of third metal band, the pair of third metal band respectively via the second metallization VIA and first metal strip
Band connection, the second metallization VIA sequentially pass through first and second layer of medium substrate；
The four-layer structure being set between third layer medium substrate lower surface and the 4th layer of medium substrate upper surface, including
Open circuit metal band；
The layer 5 structure being set between the 4th layer of medium substrate lower surface and layer 5 medium substrate upper surface, including
The metal the earth of a pair of of line of rabbet joint and a through-hole is offered, second metal band is arranged the 3rd metallization VIA via one and connected
Metal the earth is connect, third metallization VIA sequentially passes through second to the 4th layer of medium substrate；
It is set to the layer 6 structure of layer 5 medium substrate lower surface, including microstrip line, microstrip line, open circuit metal strip
Band, one of third metal band three are connected by the 4th metallization VIA, and the 4th metallization VIA sequentially passes through third
With four layers of medium substrate, through-hole and layer 5 medium substrate；
Wherein, the pair of metal patch constitutes electric dipole, the first metallization VIA, third metallization VIA and the
Two metal bands constitute the side wall of magnetic dipole, the first metal band, third metal band, the second metallization VIA, the 4th gold medal
Categoryization via hole, microstrip line constitute feed structure.
In the utility model embodiment, first metal band and metal patch are arranged in parallel；
The pair of metal patch, a pair of second metal band, a pair of of third metal band are respectively about described first
The bilateral symmetry face of layer medium substrate is symmetrical, and each metal patch, the second metal band, third metal band are distinguished
The front and back plane of symmetry about the first layer medium substrate is symmetrical；
The pair of line of rabbet joint is symmetrical about the front and back plane of symmetry of the first layer medium substrate, and each line of rabbet joint about
The bilateral symmetry face of the first layer medium substrate is symmetrical.
In the utility model embodiment, the metal patch, the second metal band length direction each parallel to described
The bilateral symmetry face of first layer medium substrate, third metal band, the line of rabbet joint, microstrip line, the length direction for metal band of opening a way are equal
Perpendicular to the bilateral symmetry face of the first layer medium substrate.
In the utility model embodiment, the bilateral symmetry face close to the first layer medium substrate of the metal patch
Side via be vertically arranged one arrange the first metallization VIA and the second metal band close to the first layer medium substrate
Bilateral symmetry face side connection, the other side of the second metal band is arranged the 3rd metallization VIA via be vertically arranged one and is connected
Connect metal the earth.
In the utility model embodiment, the left and right sides of first metal band is respectively via one group be vertically arranged
The end in the bilateral symmetry face close to the first layer medium substrate of the second metallization VIA and the pair of third metal band
Portion's connection, the end in the bilateral symmetry face far from the first layer medium substrate for first metal band kept right is via perpendicular
The right end for the 4th metallization VIA connection open circuit metal band being directly arranged and the left end of microstrip line.
In the utility model embodiment, the distance between the pair of line of rabbet joint is less than the length of the metal patch.
In the utility model embodiment, the through-hole is between the pair of line of rabbet joint and the pair of metal patch
Between.
The 5G millimeter wave of the utility model filters broad-band antenna, has the advantages that the utility model takes into account antenna
Bandwidth, filtering characteristic and low section AiP framework, bandwidth cover multiple 5G millimeter wave frequency bands, and filtering passes through lower sideband radiation zero
Point is realized, and realizes that magnetic dipole and feeder line reach low Section Design effect by metallization VIA and metal band Hybrid connections
Fruit.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is the embodiments of the present invention, for those of ordinary skill in the art, without creative efforts, also
Other attached drawings can be obtained according to the attached drawing of offer:
Fig. 1 is the cross-sectional view of the utility model 5G millimeter wave filtering broad-band antenna；
Fig. 2 is the schematic diagram of first layer structure；
Fig. 3 is the schematic diagram of second layer structure；
Fig. 4 is the schematic diagram of third layer structure；
Fig. 5 is the schematic diagram of four-layer structure；
Fig. 6 is the schematic diagram of layer 5 structure；
Fig. 7 is the schematic diagram of layer 6 structure；
Fig. 8 is the simulation result diagram of antenna；
Fig. 9 is the emulation directional diagram of antenna.
Specific embodiment
The utility model is more fully retouched below with reference to relevant drawings for the ease of understanding the utility model,
It states.The exemplary embodiments of the utility model are given in attached drawing.But the utility model can come in many different forms in fact
It is existing, however it is not limited to embodiment described herein.On the contrary, purpose of providing these embodiments is makes public affairs to the utility model
It is more thorough and comprehensive to open content.It should be understood that the specific features in the utility model embodiment and embodiment are to the application skill
The detailed description of art scheme, rather than the restriction to technical scheme, in the absence of conflict, the utility model are real
The technical characteristic applied in example and embodiment can be combined with each other.
It should be noted that term as used herein "vertical", "horizontal", "left" and "right" and similar table
It states for illustrative purposes only.Unless otherwise defined, all technical and scientific terms used herein and belong to this reality
It is identical with the novel normally understood meaning of those skilled in the art.Made in the specification of the utility model herein
Term, which is only for the purpose of describing specific embodiments, to be not intended to limit the utility model.
With reference to Fig. 1, the utility model embodiment provides a kind of 5G millimeter wave filtering broad-band antenna, including is set to first layer
First layer structure 1 at the top of medium substrate, be set to first layer medium substrate lower surface and second layer medium substrate upper surface it
Between second layer structure 2, the third layer that is set between second layer medium substrate lower surface and third layer medium substrate upper surface
Structure 3, the four-layer structure 4 being set between third layer medium substrate lower surface and the 4th layer of medium substrate upper surface, setting
Layer 5 structure 5 between the 4th layer of medium substrate lower surface and layer 5 medium substrate upper surface is set to layer 5 Jie
The layer 6 structure 6 of matter base lower surface, first to layer 6 medium substrate is the identical rectangle of planar dimension, and projects weight
It closes.
With reference to Fig. 2, in conjunction with Fig. 1, first layer structure 1 including left and right a pair of of metal patch 7 arranged side by side and is located at institute
The first metal band 12 between a pair of of metal patch 7 is stated, metal patch 7 is parallel with the first metal band 12, and the two is flat
Face shape is rectangle, and first metal band 12 is symmetrical about the front and back plane of symmetry of first layer medium substrate, and about first
The bilateral symmetry face of layer medium substrate is asymmetric.
With reference to Fig. 3, in conjunction with Fig. 1, the second layer structure 2 being set between first and second layer of medium substrate, including with described one
The second metal band of a pair 10 arranged side by side corresponding to metal patch 7, second metal band 10 is via across first
The one of layer medium substrate arranges the first metallization VIA 8 and connects with corresponding metal patch 7；
With reference to Fig. 4, in conjunction with Fig. 1, the third layer structure 3 being set between second and third layer of medium substrate, including a pair of of third
Metal band 14, the pair of third metal band 14 respectively via the second metallization VIA 13 and the first metal band 12,
Second metallization VIA 13 sequentially passes through first and second layer of medium substrate；
With reference to Fig. 5, in conjunction with Fig. 1, the four-layer structure 4 being set between third and fourth layer of medium substrate, including open circuit metal
Band 18；
With reference to Fig. 6, in conjunction with Fig. 1, the layer 5 structure 5 being set between fourth, fifth layer of medium substrate, including offer one
To the metal the earth 11 of the line of rabbet joint 19 and through-hole 16, metal the earth 11 is projected with the 4th layer of medium substrate to be overlapped, and described the
Two metal bands 10 arrange the 3rd metallization VIA 9 connection metal the earth 11 via one, and third metallization VIA 9 sequentially passes through second
To the 4th layer of medium substrate；
With reference to Fig. 7, in conjunction with Fig. 1, layer 6 structure 6, including microstrip line 17, microstrip line 17, open circuit metal band 18, wherein
One 14 three of third metal band by the 4th metallization VIA 15 connect, the 4th metallization VIA 15 sequentially pass through third and
Four layers of medium substrate, through-hole 16 and layer 5 medium substrate；
Wherein, the pair of metal patch 7 constitutes electric dipole, the first metallization VIA 8, third metallization VIA 9 with
And 10 Hybrid connections of the second metal band constitute the side wall of magnetic dipole, the first metal band 12, third metal band 14, second
Metallization VIA 13, the 4th metallization VIA 15,17 Hybrid connections of microstrip line constitute feed structure.
More specifically, the length direction of metal patch 7, the second metal band 10 is each parallel to the first layer medium substrate
Bilateral symmetry face, third metal band 14, the line of rabbet joint 19, microstrip line 17, open a way metal band 18 length direction be each perpendicular to
The bilateral symmetry face of the first layer medium substrate.The pair of metal patch 7, a pair of second metal band 10, a pair of of third
Metal band 14 is symmetrical respectively about the bilateral symmetry face of the first layer medium substrate, and each metal patch 7,
Two metal bands 10, third metal band 14 are symmetrical respectively about the front and back plane of symmetry of the first layer medium substrate；It is described
A pair of of line of rabbet joint 19 is symmetrical about the front and back plane of symmetry of the first layer medium substrate, and each line of rabbet joint 19 is about described first
The bilateral symmetry face of layer medium substrate is symmetrical.The distance between the pair of line of rabbet joint 19 is less than the length of the metal patch 7.Institute
Through-hole 16 is stated between the pair of line of rabbet joint 19 and between the pair of metal patch 7.
Wherein, the side in the bilateral symmetry face close to the first layer medium substrate of the metal patch 7 is via vertical
One be arranged arranges the bilateral symmetry face close to the first layer medium substrate of the first metallization VIA 8 and the second metal band 10
Side connection, it is big that the 3rd metallization VIA 9 connection metal via be vertically arranged one is arranged in the other side of the second metal band 10
Ground 11.
Wherein, the left and right sides of first metal band 12 is respectively via one group of second metallization VIA being vertically arranged
13 connect with the end in the bilateral symmetry face close to the first layer medium substrate of the pair of third metal band 14, keep right
A third metal band 14 the bilateral symmetry face far from the first layer medium substrate end via being vertically arranged
The right end of 4th metallization VIA 15 connection open circuit metal band 18 and the left end of microstrip line 17, the right end of microstrip line 17 are located at
The edge of layer 5 medium substrate lower surface.
The working principle of the utility model is as follows: signal is transmitted to by microstrip line 17 by metal band 12,14 and gold
Categoryization via hole 13,15 Hybrid connections are constituted on feed structure, and then signal is coupled to the eelctric dipole being made of two metal patches 7
Son be made of on the side wall of magnetic dipole metallization VIA 8,9 and 10 Hybrid connections of metal band, presented in this course of work
Electric structure generates radiation zero, open circuit metal band 18 and two line of rabbet joint 19 in low frequency and generates two radiation zeros in high frequency, from
And reach the working effect of wideband filtered.As it can be seen that the utility model embodiment will open a way, metal band and dual-slot structure are introduced into
The low section broad-band chip as made of patch, connecting hole and metal band Hybrid connections integrates in magnetoelectricity dipole, realizes tool
There is the low section broadband millimeter-wave antenna that can be used for AiP framework of filtering characteristic, bandwidth can cover Chinese 5G millimeter wave two-band,
It is particularly suitable for towards the mobile terminal 5G.
The embodiments of the present invention have the effect that and 1) open circuit metal band and two line of rabbet joint are introduced by pasting
Novel low section broad-band chip made of piece, connecting hole and metal band Hybrid connections integrates in magnetoelectricity dipole, forms tool
There is the millimeter wave broadband filter antenna of lower sideband radiation zero, and has both lower section conducive to AiP framework；2) two bar groove phase
It is symmetrical for electric dipole, the not symmetry of destruction direction figure while realizing frequency high-end radiation zero；3) open circuit metal
The direction of band and the polarization direction of electric dipole are consistent, do not destroy magnetic dipole while realization frequency high-end radiation zero
Radiation in working band；4) metallization VIA and metal band dislocation connect and compose the side wall of magnetic dipole and feed is tied
Structure, the low section for being conducive to antenna are realized.
For example, the matching of antenna emulation and gain response are as shown in Figure 8, it is seen that its 6- in a specific embodiment
DB coupling bandwidth has reached 53%, covers two frequency ranges of 5G millimeter wave well.Gain ranging is 5.15- in frequency band
6.16dBi.Fig. 9 is that the antenna at 26GHz and 39GHz emulates directional diagram, specifically, left figure is the face 26GHz yoz directional diagram
With the face xoz directional diagram, right figure is 39GHz yoz face directional diagram and the face xoz directional diagram, and present case is using dielectric constant
3.4, the substrate that loss angle is 0.004, medium substrate overall thickness 0.78mm is 0.068 λ in 26GHz0。
To sum up, compared with the prior art, the utility model can cover the 24.75- of 5G millimeter wave under the conditions of low section
Two frequency ranges of 27.5GHz and 37-42.5GHz, bandwidth is about 53% or more, is conducive to AiP framework, and at working band both ends
The frequency selectivity that radiation zero improves antenna is formed, antenna filtering is conducive to, reduces demand of the system to filter.
The embodiments of the present invention are described above in conjunction with attached drawing, but the utility model is not limited to
The specific embodiment stated, the above mentioned embodiment is only schematical, rather than restrictive, this field it is common
Technical staff is not departing from the utility model aims and scope of the claimed protection situation under the enlightenment of the utility model
Under, many forms can be also made, these are belonged within the protection of the utility model.
Claims (7)
1. a kind of 5G millimeter wave filters broad-band antenna characterized by comprising
Be set to the first layer structure (1) of first layer medium substrate upper surface, including a pair of of metal patch (7) arranged side by side with
And the first metal band (12) between the pair of metal patch (7)；
The second layer structure (2) being set between first layer medium substrate lower surface and second layer medium substrate upper surface, including
The second metal band of a pair (10) arranged side by side corresponding with the pair of metal patch (7), second metal band
(10) it is connected via the first metallization VIA (8) for passing through first layer medium substrate with corresponding metal patch (7)；
The third layer structure (3) being set between second layer medium substrate lower surface and third layer medium substrate upper surface, including
A pair of of third metal band (14), the pair of third metal band (14) respectively via the second metallization VIA (13) and institute
The first metal band (12) connection is stated, the second metallization VIA (13) sequentially passes through first and second layer of medium substrate；
The four-layer structure (4) being set between third layer medium substrate lower surface and the 4th layer of medium substrate upper surface, including
It opens a way metal band (18)；
The layer 5 structure (5) being set between the 4th layer of medium substrate lower surface and layer 5 medium substrate upper surface, including
The metal the earth (11) of a pair of of line of rabbet joint (19) and a through-hole (16) is offered, second metal band (10) is via a row
Third metallization VIA (9) connects metal the earth (11), and third metallization VIA (9) sequentially passes through second to the 4th layer of medium base
Plate；
It is set to the layer 6 structure (6) of layer 5 medium substrate lower surface, including microstrip line (17), microstrip line (17), open circuit
Metal band (18), one of third metal band (14) three are connected by the 4th metallization VIA (15), the 4th metal
Change via hole (15) and sequentially passes through third and four layers of medium substrate, through-hole (16) and layer 5 medium substrate；
Wherein, the pair of metal patch (7) constitutes electric dipole, the first metallization VIA (8), third metallization VIA (9)
And second metal band (10) constitute magnetic dipole side wall, the first metal band (12), third metal band (14), second
Metallization VIA (13), the 4th metallization VIA (15), microstrip line (17) constitute feed structure.
2. 5G millimeter wave according to claim 1 filters broad-band antenna, which is characterized in that first metal band (12)
It is arranged in parallel with metal patch (7)；
The pair of metal patch (7), a pair of second metal band (10), a pair of of third metal band (14) are respectively about institute
The bilateral symmetry face for stating first layer medium substrate is symmetrical, and each metal patch (7), the second metal band (10), third
Metal band (14) is symmetrical respectively about the front and back plane of symmetry of the first layer medium substrate；
The pair of line of rabbet joint (19) is symmetrical about the front and back plane of symmetry of the first layer medium substrate, and each line of rabbet joint (19)
Bilateral symmetry face about the first layer medium substrate is symmetrical.
3. 5G millimeter wave according to claim 2 filters broad-band antenna, which is characterized in that the metal patch (7), second
Bilateral symmetry face of the length direction of metal band (10) each parallel to the first layer medium substrate, third metal band
(14), the line of rabbet joint (19), microstrip line (17), open a way metal band (18) length direction be each perpendicular to the first layer medium substrate
Bilateral symmetry face.
4. 5G millimeter wave according to claim 3 filters broad-band antenna, which is characterized in that metal patch (7) are leaned on
The first metallization VIA (8) and the is arranged via be vertically arranged one in the side in the bilateral symmetry face of the nearly first layer medium substrate
The side connection in the bilateral symmetry face close to the first layer medium substrate of two metal bands (10), the second metal band (10)
The other side via be vertically arranged one arrange the 3rd metallization VIA (9) connection metal the earth (11).
5. 5G millimeter wave according to claim 3 filters broad-band antenna, which is characterized in that first metal band (12)
The left and right sides respectively via one group of second metallization VIA (13) being vertically arranged and the pair of third metal band (14)
Close to the first layer medium substrate bilateral symmetry face end connection, the third metal band (14) kept right it is remote
It is opened via the 4th metallization VIA (15) connection being vertically arranged the end in the bilateral symmetry face from the first layer medium substrate
The right end of road metal band (18) and the left end of microstrip line (17).
6. 5G millimeter wave according to claim 3 filters broad-band antenna, which is characterized in that between the pair of line of rabbet joint (19)
Distance be less than the metal patch (7) length.
7. 5G millimeter wave according to claim 3 filters broad-band antenna, which is characterized in that the through-hole (16) is located at described
Between a pair of of line of rabbet joint (19) and between the pair of metal patch (7).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821776796.XU CN208862175U (en) | 2018-10-31 | 2018-10-31 | 5G millimeter wave filters broad-band antenna |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821776796.XU CN208862175U (en) | 2018-10-31 | 2018-10-31 | 5G millimeter wave filters broad-band antenna |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244656A (en) * | 2018-10-31 | 2019-01-18 | 南通至晟微电子技术有限公司 | 5G millimeter wave filters broad-band antenna |
| CN114122696A (en) * | 2021-10-30 | 2022-03-01 | 南京理工大学 | 5G millimeter wave filtering antenna based on SIW |
| CN116093596A (en) * | 2023-01-18 | 2023-05-09 | 珠海正和微芯科技有限公司 | Millimeter wave broadband package antenna |
-
2018
- 2018-10-31 CN CN201821776796.XU patent/CN208862175U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244656A (en) * | 2018-10-31 | 2019-01-18 | 南通至晟微电子技术有限公司 | 5G millimeter wave filters broad-band antenna |
| CN114122696A (en) * | 2021-10-30 | 2022-03-01 | 南京理工大学 | 5G millimeter wave filtering antenna based on SIW |
| CN116093596A (en) * | 2023-01-18 | 2023-05-09 | 珠海正和微芯科技有限公司 | Millimeter wave broadband package antenna |
| CN116093596B (en) * | 2023-01-18 | 2023-09-12 | 珠海正和微芯科技有限公司 | Millimeter wave broadband package antenna |
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