CN208805673U

CN208805673U - Infiltration type exposure machine device

Info

Publication number: CN208805673U
Application number: CN201821519997.1U
Authority: CN
Inventors: 陈琦南
Original assignee: Changxin Memory Technologies Inc
Current assignee: Changxin Memory Technologies Inc
Priority date: 2018-09-18
Filing date: 2018-09-18
Publication date: 2019-04-30
Anticipated expiration: 2028-09-18

Abstract

The utility model provides a kind of infiltration type exposure machine device, and infiltration type exposure machine device includes: wafer carrier, for carrying wafer to be exposed；Immersion fluid forms device, is set to above wafer to be exposed, is used to form immersion fluid flow field, wherein exposure light source realizes the exposure for treating exposed wafer via immersion fluid flow field；And edge limits liquid device, is set in wafer carrier, and edge limit liquid device is located at the periphery of wafer to be exposed, and has spacing between the outer rim of wafer to be exposed.Through the above scheme, the utility model passes through the setting of immersion fluid current-limiting apparatus, improve the environment of wafer periphery to be exposed, to reduce the gap of crystal round fringes, reduce the size for forming bubble, and then reduce the speed that bubble rises, so that wafer is during exposure, bubble will not enter in exposure light path with water flow, prevent bubble from treating the influence of exposed wafer exposure quality.

Description

Infiltration type exposure machine device

Technical field

The utility model belongs to integrated circuit preparation technical field, more particularly to a kind of infiltration type exposure machine device.

Background technique

Based on optical lithography, it accurately projects the figure on mask plate modern lithographic equipment using optical system It is exposed on the substrate (such as silicon wafer) of coated photoresist.Liquid immersion lithography refer between exposure cameras and silicon wafer full of water (or Other submergence immersion liquid) immersion fluid flow field is formed, to replace corresponding air in conventional dry photoetching technique, such as 193nm exposure machine In order to obtain rate of more preferably handling seperately, water is added in the interface of Lens (lens) and wafer to be exposed.

However, there is also a kind of this important problems during liquid immersion lithography, to be exposed during scan exposure Bubble is also easy to produce at the high and low fall of crystal round fringes, the bubble in water (immersion fluid flow field) will cause exposure defect, if projection The path of beam then seriously affects the patterned image quality being incident upon on silicon wafer, causes by containing bladdery immersion liquid region Defect is exposed, as illustrated in fig. 1 and 2, the height fall between wafer 101 and carrier 100 to be exposed is during water 102 is mobile It is easy to produce bubble 103, the presence of bubble 103 will affect the exposure light path 104 in exposure process, light of the light after water vapor bubbles Road is to change, and the size being reacted on wafer can change, and bubble is generated in marginal position, and the die (crystal grain) at edge holds Easy suffer (undermined), as shown in figure 3,105 size of defect about between 1~1000um, be to yield it is fatal, if technique On need to pass through 10 layers of immersion lithography, every layer has 3 defects, in total may maximum cause the yield loss of 10*3=30dies, Wherein, 220nm is the example of pattern pitch (pattern period spacing) length of normal region, and 308nm is that have aeration The example of the pitch length in region.

Therefore, how a kind of infiltration type exposure machine device is provided and improves the infiltration type exposure machine device of air blister defect Exposure method is necessary with solving the above problem in the prior art.

Utility model content

In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of infiltration type exposure machine dresses It sets, forms the problems such as bubble is to generate exposure defective effect exposure quality in immersion fluid flow field in the prior art for solving.

In order to achieve the above objects and other related objects, the utility model provides a kind of infiltration type exposure machine device, described Infiltration type exposure machine device includes:

Wafer carrier, for carrying wafer to be exposed；

Immersion fluid forms device, is set to above the wafer to be exposed, is used to form immersion fluid flow field, wherein exposure Light source realizes the exposure to the wafer to be exposed via the immersion fluid flow field；And

Edge limits liquid device, is set in the wafer carrier, and edge limit liquid device is located at the crystalline substance to be exposed Round periphery, and there is spacing between the outer rim of the wafer to be exposed.

As a kind of optinal plan of the utility model, the edge limit liquid device includes edge ring, the edge ring The center of circle and the center of circle of the wafer to be exposed coincide.

As a kind of optinal plan of the utility model, the outer diameter of the edge ring is greater than the immersion fluid on corresponding position The difference of the radius of the outer rim in flow field, the inside radius of the edge ring and the wafer to be exposed is less than the wafer to be exposed Highly.

As a kind of optinal plan of the utility model, the height of edge the limit liquid device and the wafer to be exposed is general In identical.

As a kind of optinal plan of the utility model, the edge limit liquid device is with the wafer to be exposed along described Gap is formed on the radial direction of wafer to be exposed, the gap is less than 0.8mm.

As a kind of optinal plan of the utility model, the material of the edge limit liquid device includes waterproof material, described Waterproof material includes any one in high molecular polymer and metal-plated hydrophobic film.

As a kind of optinal plan of the utility model, the high molecular polymer includes Teflon, polyethylene and gathers Any one in tetrafluoroethene, the hydrophobic film includes fluorine-contained film.

As a kind of optinal plan of the utility model, the infiltration type exposure machine device further includes exhaust device, described Exhaust device is set in the wafer carrier, wherein the wafer to be exposed and the edge are limited liquid by the exhaust device The liquid discharge in the remaining immersion fluid flow field between device.

As described above, the infiltration type exposure machine device of the utility model and the infiltration type exposure machine dress of improvement air blister defect The exposure method set has the advantages that the utility model passes through the setting of immersion fluid current-limiting apparatus, improves to be exposed The environment of wafer periphery, so that the gap of crystal round fringes is reduced, the size of the formation bubble of reduction, and then reduce bubble and rise Speed prevent bubble from treating exposure so that wafer, during exposure, bubble will not enter in exposure light path with water flow The influence of light exposing wafer quality.

Detailed description of the invention

Fig. 1 is shown as generating the schematic diagram of bubble in the prior art.

Fig. 2 is shown as the schematic diagram that bubble influences exposure quality in the prior art.

Fig. 3 is shown as the schematic diagram for the defect that aeration exposure quality generates in the prior art.

Fig. 4 is shown as the structural schematic diagram of infiltration type exposure machine device provided by the utility model.

Fig. 5 is shown as an exemplary schematic diagram of the infiltration type exposure machine device exposure process of the utility model.

Fig. 6 is shown as the schematic top plan view of the part-structure of the infiltration type exposure machine device of the utility model.

Fig. 7 is shown as the schematic cross-section of the part-structure exposure process of the infiltration type exposure machine device of the utility model.

Fig. 8 is shown as the size for the bubble being likely to form in the prior art.

Fig. 9 is shown as the stream of the exposure method of the infiltration type exposure machine device provided by the utility model for improving air blister defect Cheng Tu.

Figure 10 is shown as the diameter of the bubble formed in exposure process and the relational graph of the steady rate of bubble in a liquid.

Figure 11 is shown as the move mode schematic diagram of a wafer to be exposed in the exposure method of the utility model.

Component label instructions

100 carriers

101 wafers to be exposed

102 water

103 bubbles

104 exposure light paths

105 defects

200 wafer carriers

201 wafers to be exposed

201a wafer to be processed

201b photoresist

202 immersion fluids form device

203 immersion fluid flow fields

204 edges limit liquid device

205 lens

206 immersion fluid entrances

207,210 high pressure gas input end

208,211 vacuum pumping opening

The outlet of 209 immersion fluids

S1~S4 step 1) is to step 4)

Specific embodiment

Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer With carrying out various modifications or alterations under the spirit without departing from the utility model.

Fig. 4 is please referred to Figure 11.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way The basic conception of utility model, though it is only shown with related component in the utility model rather than when according to actual implementation in diagram Component count, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind Become, and its assembly layout form may also be increasingly complex.

As shown in figs. 4-7, the utility model provides a kind of infiltration type exposure machine device, the infiltration type exposure machine device packet It includes:

Wafer carrier 200, for carrying wafer 201 to be exposed；

Immersion fluid forms device 202, is set to 201 top of wafer to be exposed, is used to form immersion fluid flow field 203, Wherein, exposure light source realizes the exposure to the wafer 201 to be exposed via the immersion fluid flow field 203；And

Edge limits liquid device 204, is set in the wafer carrier 200, and edge limit liquid device 204 is positioned at described The periphery of wafer 201 to be exposed, and there is spacing between the outer rim of the wafer 201 to be exposed.

Specifically, the utility model provides a kind of photoetching process infiltration type exposure machine device, the infiltration type exposure machine dress It sets and forms device 202 and edge limit liquid device 204 including at least wafer carrier (wafer table) 200, immersion fluid, wherein In one example, the wafer carrier 200 carries the wafer to be exposed and the wafer to be exposed 201 is driven to make sweeping for high speed It retouches, the movement such as stepping；The immersion fluid, which forms device 202, can form immersion fluid flow field 203, such as according to the wafer carrier 200 motion state provides a stable immersion fluid flow field 203, together in exposure object lens (such as lens 205) field range When guarantee the immersion fluid flow field 203 and extraneous sealing, guarantee that immersion fluid does not leak；In one example, the crystalline substance to be exposed Circle 201 includes the wafer 201a to be processed and photoresist 201b for being formed in the crystal column surface to be processed, in exposure process, such as Shown in Fig. 5, optical path, will be on mask plate via lens 205, immersion fluid flow field 203, photoresist 201b and wafer 201a to be processed Pattern transfer to the photoresist 201b on.

Specifically, as shown in figure 4, device 202 is formed for the immersion fluid, positioned at the wafer 201 to be exposed Top can have a certain distance between the upper surface of the wafer to be exposed, form the part infiltration at the distance Liquid field 203, the immersion fluid flow field can directly contact the upper surface of the wafer to be exposed, in addition, the choosing apart from size Selecting can set according to actual demand.It further includes immersion fluid entrance 206 and immersion fluid outlet that the immersion fluid, which forms device 202, 209, for carrying out the replacement of immersion fluid, to form the immersion fluid flow field 203 needed, in one example, the immersion fluid can be with It is water, is also possible to refractive index greater than water liquid, wherein be full of water between exposure cameras and silicon wafer (wafer 201 to be exposed) (or immersion fluid of higher refractive index) forms immersion fluid flow field, to replace corresponding air in conventional dry photoetching technique, due to The refractive index of water is bigger than air, this allows for the increase of lens group numerical aperture, and then obtains smaller characteristic line breadth.In addition, It further includes at least two vacuum pumping openings (vacuum) 208,211 and at least two high pressures that the immersion fluid, which forms device 202, Gas input port (pressurized air) 207,210, quantity can be set according to actual demand, such as each setting four, In, input compressed gas from the high pressure gas input port, compressed gas spray after towards the immersion fluid field 203 and described Vacuum pumping opening extraction is to form " air knife (air knife) " in 203 periphery of the immersion fluid field, to be formed stable described Immersion fluid flow field 203." air knife (the air knife) " has the width along crystal column surface direction, as shown in figure 4, the width Degree refers to the lateral distance between the adjacent high pressure gas input port and the vacuum pumping opening.

In addition, also setting up edge limit liquid device 204 in the exposure machine device of the utility model, the edge limits liquid device 204 are set in the wafer carrier 200, can also as described in can be and be fixed in a manner of fixed installation in wafer carrier To be removably mounted in the wafer carrier, wherein drive the wafer to be exposed 201 to move in the wafer carrier 200 During dynamic exposure, when the marginal position of the wafer 201 to be exposed is moved to the immersion fluid field 203, the edge Limit liquid device 204 by the liquid portion in the immersion fluid flow field 203 be limited in the wafer to be exposed and the limit liquid device it Between, as shown in the dotted line frame in Fig. 4, wherein shape and structure of the edge limit liquid device 204 etc. can be set according to actual demand Set, if the edge limit liquid device relative to the crystal round fringes to be exposed side have certain area, can with it is described Crystal round fringes to be exposed form a liquid confining region, wherein the immersion fluid liquid of the limitation crystal round fringes to be exposed Body limits the void space of crystal round fringes periphery to be exposed, so as to be conducive to be limited in the to be exposed of the corresponding position The size for the bubble that crystal round fringes generate, that is, can reduce the diameter that the position forms bubble, so as to prevent bubble from entering Into the immersion fluid flow field, and then the influence that exposure quality is generated after preventing bubble from entering the immersion fluid flow field.

It should be noted that during being exposed to the wafer 201 to be exposed: the immersion fluid flow field 203 passes through The steady rate of the bubble formed when crossing the edge of the wafer to be exposed 201 includes:Its In, k is the resistance coefficient in the immersion fluid flow field, ρ_LiquidFor the fluid density in the immersion fluid flow field, ρ_GasFor the gas of formation The density of gas in bubble, r are the radius of the bubble, and g is acceleration of gravity.Wherein, consider the resistance of immersion fluid liquid (such as water) The influence for the negative acceleration that power generates, resistance f are proportional to square of the radius r of the bubble of generation, are proportional to bubble and move upwards Speed v square, i.e. f=kr²v², thus f=k r²v²=ma=ρ_GasVa=ρ_Gas(4π/3)r³A, wherein m is the matter of bubble Amount, V be bubble volume, thus be based on above formula it can be concluded that, a=3kv2/ (4 π ρ_GasR), it is known that, resistance is with r²It is directly proportional, and Volume is with r³It is directly proportional, due to this difference 1 power, result in r it is big when, the absolute value of this negative acceleration is small instead, When reaching stable maximum value, resistance=buoyancy-gravity, then, f=ρ_LiquidGV-mg, thus speed when obtaining stableThe last stabilized speed of bubble, be with bubble radius it is directly proportional, radius is bigger most Attainable speed is bigger afterwards, therefore, can realize the edge periphery of the wafer 201 to be exposed by reducing bubble radius The bobble rise velocity that position generates becomes smaller, and extends bubble rise time.In wafer moving exposure process, bubble is prevented to enter exposure Light optical path improves and exposes defect caused by bubble.In addition, Air Bubble Size in water rate of climb distribution map as indicated by 10, gas The rate of climb of ducking in drink is in bubble diameter 1000um hereinafter, the small rate of climb of diameter is slow.

As an example, the edge limit liquid device 204 includes edge ring, the center of circle of the edge ring and the crystalline substance to be exposed The center of circle of circle 201 coincides.

Specifically, in one example, the edge limit liquid device 204 can be a cyclic structure, continuously around in institute State the periphery of wafer 201 to be exposed, wherein the outer rim of the wafer to be exposed, the edge ring of cyclic structure inside with And the upper surface of the wafer carrier 200 forms a circular groove structure, the immersion fluid process pair in the immersion fluid flow field 203 It can enter in the circular groove structure when answering the edge of the wafer to be exposed of position, using the setting of the edge ring, Can be when the marginal position of the wafer to be exposed expose, the immersion fluid flow field 203 is at the edge of the wafer to be exposed The bubble volume that peripheral position generates becomes smaller, and slows down bobble rise velocity, extends the rise time, so that the wafer to be exposed When marginal position completes exposure, the bubble is had not been entered into exposure light path, is conducive to improve exposure quality.

As an example, the outer diameter of the edge ring is greater than the outer rim in the immersion fluid flow field 203 on corresponding position, the side The difference of the radius of the inside radius of edge ring and the wafer 201 to be exposed is less than the height of the wafer 201 to be exposed.

Specifically, when edge limit liquid device 204 is selected as the edge ring of cyclic structure, in one example, The outer diameter that the edge ring is arranged is greater than the outer rim in the immersion fluid flow field 203 on corresponding position, that is to say, that relative to described Wafer 201 to be exposed, in exposure process, the edge ring will be distal to the infiltration liquid stream far from the side of the wafer to be exposed The outermost that the liquid of field is extended, as shown in fig. 7, the outer rim of the edge ring is relative to the wafer to be exposed far from described One pre-determined distance p of immersion fluid flow field edge, in addition, in one example, the pre-determined distance p is greater than the " air knife (air Knife) " along the width in the crystal column surface direction to be exposed, to be conducive to " air knife (the air knife) " to the infiltration Stablizing for liquid stream field 203 maintains.

In addition, in one example, the difference of the radius of the inside radius of the edge ring and the wafer 201 to be exposed, With regard to the gap s in Fig. 7, less than the height of the wafer to be exposed, wherein the inside radius of the edge ring refers to the edge The radius for the circle that projection of the inside edge of ring on the surface where wafer carrier is constituted, at this point, the gap s is less than described The height of wafer to be exposed, so that the edge of the wafer to be exposed is difficult to generate diameter and is approximately equal to the crystalline substance to be exposed The bubble of circle height, that is, be less than the height of the wafer to be exposed in the bubble diameter that the crystal round fringes to be exposed generate at this time Degree is conducive to reduce Air Bubble Size, that is to say, that as shown in Figure 8, it is possible to create the bubble of size in Fig. 8, the edge limit liquid The above-mentioned setting of device 204 can reduce the size for the bubble being likely to form.

As an example, the edge limit liquid device and the wafer to be exposed are in the radial direction along the wafer to be exposed Upper formation gap, the gap are less than 0.8mm；

As an example, the height of the edge limit liquid device and the wafer to be exposed is generally in identical.

Specifically, in one example, the edge limit liquid device 204 is located at the periphery of the wafer 201 to be exposed, and with There is spacing between the outer rim of the wafer to be exposed 201, i.e., along the radial direction of the wafer to be exposed, the edge limit A gap is formed between liquid device and the outer rim of the wafer to be exposed, in one example, the gap is less than 0.8mm, thus It may further ensure that the limit for the Air Bubble Size that limit liquid device crystal round fringes to be exposed described in corresponding position in the edge generate System, in a preferable example, the gap is less than 0.6mm, to be less than the height of general wafer, limits the size of bubble. In addition, in another example, the highly preferred height with the wafer to be exposed of the edge limit liquid device 204 is generally in phase Together, so as to guarantee liquid limitation on the basis of prevent the edge limit liquid device edge generate be unfavorable for exposure gas Bubble.In one example, the height of the edge limit liquid device is between 0.75mm-0.8mm.In addition, when the edge limits liquid When device is selected as the edge ring of cyclic structure, in one example, the internal diameter of the edge ring is between 300mm-301.6mm Between, it can be adapted for 12 cun of wafers to be exposed, the height of the edge ring is selected in this example between 0.75mm-0.8mm It is selected as 0.78mm, the outer diameter of the edge ring is greater than infiltration type exposure machine mobile range of water in scanning.

As an example, the material of the edge limit liquid device 204 includes waterproof material, the waterproof material includes macromolecule Any one in polymer and metal-plated hydrophobic film, wherein the high molecular polymer include Teflon, polyethylene with And at least one of polytetrafluoroethylene (PTFE), the hydrophobic film include fluorine-contained film.

Specifically, in this example, providing a kind of constituent material of edge limit liquid device 204, the edge limits liquid The material of device 204 can be waterproof material, not react with the liquid in the immersion fluid flow field, and not to exposure technology Pollution is generated, when the waterproof material is selected as the metal-plated hydrophobic material, it is fluorine-containing to can be one layer of plating outside metallic copper Film.

As an example, the infiltration type exposure machine device further includes exhaust device (not shown), the exhaust device It is set in the wafer carrier 200, the wafer 201 to be exposed is limited liquid device 204 with the edge by the exhaust device Between the remaining immersion fluid flow field liquid discharge.

Specifically, in one example, also setting up an exhaust device, the exhaust device may include a pump drainage pipeline, institute The one end for stating pump drainage pipeline is arranged in the region between the wafer to be exposed and edge limit liquid device, is used for the position Remaining liquid is taken away after the immersion fluid flow field warp set, may in some residual liquid in the embodiment of the utility model Bubble is generated in the presence of most of, an exhaust device is added and takes some residual liquid away, so as to prevent this part liquid Bubble in body turns again in the immersion fluid flow field, and causes to have an impact exposure quality.

In addition, as shown in figs. 9-11, and Fig. 4-7 is referred to, the utility model also provides a kind of infiltration for improving air blister defect The exposure method of formula exposure machine device, wherein the exposure method preferably use exposure machine device provided by the utility model into Row exposure, the exposure method include the following steps:

1) wafer carrier is provided, edge is set in the wafer carrier and limits liquid device；

2) wafer to be exposed is placed in the wafer carrier, wherein the edge limit liquid device is located at described to be exposed The periphery of wafer, and there is spacing between the outer rim of the wafer to be exposed；

3) device is formed by immersion fluid and forms immersion fluid flow field, wherein the immersion fluid formation device is set to described The top of wafer to be exposed；And

4) controlling the wafer carrier drives the wafer to be exposed and edge limit liquid device to be moved, so that Exposure light source realizes the exposure to the wafer to be exposed via the immersion fluid flow field.

The infiltration type exposure machine device provided by the utility model for improving air blister defect is described in detail below in conjunction with attached drawing Exposure method.

Firstly, carrying out step 1) as shown in the S1 and Fig. 6 and Fig. 7 in Fig. 9, wafer carrier 200 being provided, in the wafer Edge is set on microscope carrier and limits liquid device 204.

Then, as shown in the S2 and Fig. 6 and Fig. 7 in Fig. 9, step 2) is carried out, wafer 201 to be exposed is placed in the wafer On microscope carrier 200, wherein edge limit liquid device 204 is located at the periphery of the wafer 201 to be exposed, and with it is described to be exposed There is spacing between the outer rim of wafer 201.

Specifically, providing wafer carrier 200, and edge is set in the wafer carrier and limits liquid device 204, or provides and sets The wafer carrier of the edge limit liquid device 204 is set, wherein the edge limit liquid device 204 is set to the wafer carrier On 200, as described in can be and be fixed in a manner of fixed installation in wafer carrier, the crystalline substance can also be removably mounted on On circle microscope carrier, wherein during the wafer carrier 200 drives the wafer to be exposed 201 mobile, when described to be exposed When the marginal position of wafer 201 passes through the immersion fluid process 203, the edge limits liquid device 204 for the wafer to be exposed The liquid portion in the immersion fluid flow field 203 at 201 edges is limited between the wafer to be exposed and the limit liquid device, such as Shown in dotted line frame in Fig. 4, wherein shape and structure of the edge limit liquid device 204 etc. can be arranged according to actual demand, only It wants the edge limit liquid device that there is certain area relative to the side of the crystal round fringes to be exposed, limits wafer to be exposed The fluid space at edge, so as to the liquid portion shape with the crystal round fringes to be exposed and the immersion fluid flow field 203 At a lesser gas compartment, can be conducive to be limited in the bubble that the crystal round fringes to be exposed of the corresponding position generate Size, that is, can reduce the position formed bubble diameter, so as to prevent bubble from entering in the immersion fluid flow field Exposure light path in, and then the adverse effect for preventing bubble from generating to exposure quality.

Specifically, in one example, the edge limit liquid device 204 can be a cyclic structure, continuously around in institute State the periphery of wafer 201 to be exposed, wherein the outer rim of the wafer to be exposed, the edge ring of cyclic structure inside with And the upper surface of the wafer carrier 200 forms a circular groove structure, the immersion fluid process pair in the immersion fluid flow field 203 It can enter in the circular groove structure when answering the edge of the wafer to be exposed of position, using the setting of the edge ring, The volume that the bubble formed in immersion fluid in crystal round fringes peripheral region to be exposed can be limited, to further be conducive to bubble The reduction of the rate of climb extends the rise time of bubble, during exposed wafer marginal position, prevents bubble from entering exposure In optical path, be conducive to improve exposure quality.

As an example, the outer diameter of the edge ring is greater than the outer rim in the immersion fluid flow field on corresponding position, the edge The difference of the radius of the inside radius of ring and the wafer to be exposed is less than the height of the wafer to be exposed.

In addition, in one example, the difference of the radius of the inside radius of the edge ring and the wafer 201 to be exposed, With regard to the gap s in Fig. 7, less than the height of the wafer to be exposed, at this point, the gap s is less than the height of the wafer to be exposed Degree, so that the edge of the wafer to be exposed is difficult to generate the bubble that diameter is approximately equal to the wafer height to be exposed, That is, being less than the height of the wafer to be exposed in the bubble diameter that the crystal round fringes to be exposed generate at this time, be conducive to reduce Air Bubble Size, that is to say, that as shown in Figure 8, it is possible to create the bubble of size in Fig. 8, the edge limit the above-mentioned of liquid device 204 The size that can reduce the bubble being likely to form is set.

Then, as shown in the S3 and Fig. 4-7 in Fig. 9, step 3) is carried out, device 202 is formed by immersion fluid and forms infiltration Liquid stream field 203, wherein the immersion fluid forms the top that device 202 is set to the wafer to be exposed 201.

Specifically, the immersion fluid, which forms device 202, can form immersion fluid flow field 203, such as according to the wafer carrier 200 motion state provides a stable immersion fluid flow field 203, together in exposure object lens (such as lens 205) field range When guarantee the immersion fluid flow field 203 and extraneous sealing, guarantee that immersion fluid does not leak.The immersion fluid forms device 202, It is formed in the top of the wafer to be exposed 201, there can be a certain distance between the upper surface of the wafer to be exposed, The part immersion fluid field 203 is formed at the distance, the immersion fluid flow field can directly contact the upper of the wafer to be exposed Surface, in addition, the selection apart from size can be set according to actual demand.In one example, the wafer to be exposed 201 wraps Wafer 201a to be processed and the photoresist 201b for being formed in the crystal column surface to be processed are included, in exposure process, such as Fig. 5 institute Show, optical path is via lens 205, immersion fluid flow field 203, photoresist 201b and wafer 201a to be processed, by the figure on mask plate Shape is transferred on the photoresist 201b.

Finally, as shown in the S4 and Fig. 4-7 in Fig. 9, carry out step 4), control the wafer carrier 200 drive it is described to Exposed wafer 201 and edge limit liquid device 204 are moved, so that exposure light source is via the immersion fluid flow field 203 Realize the exposure to the wafer 201 to be exposed.

As an example, in step 4), during being exposed to the wafer to be exposed: 200 band of wafer carrier Move the wafer to be exposed 201 and the edge current-limiting apparatus 204 to carry out mobile mode include that scan-type is mobile or step-by-step movement Mobile, during carrying out the movement, the difference of the wafer to be exposed presets exposure area successively via the infiltration Realize the exposure of the wafer to be exposed in liquid stream field.

Specifically, in one example, in exposure process, the wafer carrier 200 drives the wafer to be exposed and institute Stating edge current-limiting apparatus and carrying out mobile mode includes that scan-type is mobile or step-by-step movement is mobile, that is to say, that the immersion fluid shape It is fixedly installed at device 202, the wafer carrier 200 drives the wafer to be exposed to be moved, so that described need to expose Default exposure area be scanned the mobile mode of the formula either mobile mode of step-by-step movement relative to the immersion fluid flow field.

As an example, the wafer carrier 200 drive the wafer to be exposed 201 and the edge current-limiting apparatus 204 into The mobile mode of row includes: to move the wafer to be exposed 201 along serpentine shaped from the end point of the wafer 201 to be exposed, To realize the exposure for presetting exposure area on the wafer to be exposed 201.

Specifically, in one example, as shown in figure 11, the wafer carrier 200 drives the wafer to be exposed 201 to carry out The move mode of scan-type is moved using along a serpentine shaped in this example, and wafer to be exposed substantially divides as will be described For 9 regions, the wafer to be exposed is moved since the lower left side of the wafer to be exposed, successively scans 1 to 9 this 9 areas Domain carries out the exposure technology of the wafer to be exposed.

As an example, during being exposed to the wafer 201 to be exposed: institute is passed through in the immersion fluid flow field 203 Stating the steady rate of bubble that the edge of wafer 201 to be exposed is formed includes:Wherein, k is institute State the resistance coefficient in immersion fluid flow field, ρ_LiquidFor the fluid density in the immersion fluid flow field, ρ_GasFor gas in the bubble of formation Density, r be the bubble radius, g is acceleration of gravity.

Specifically, the immersion fluid flow field 203 between the wafer to be processed 201 and edge limit liquid device 204 is passed through When the steady rate of bubble that is formed are as follows:Wherein, consider the resistance of immersion fluid liquid (such as water) The influence of the negative acceleration of generation, resistance f are proportional to square of the radius r of the bubble of generation, are proportional to what bubble moved upwards Square of speed v, i.e. f=kr²v², thus f=k r²v²=ma=ρ_GasVa=ρ_Gas(4π/3)r³A, wherein m is the quality of bubble, V be bubble volume, thus be based on above formula it can be concluded that, a=3kv2/ (4 π ρ_GasR), it is known that, resistance is with r²It is directly proportional, and volume With r³It is directly proportional, due to 1 power of this difference, result in r it is big when, the absolute value of this negative acceleration is small instead, when reaching To when stablizing maximum value, resistance=buoyancy-gravity, then, f=ρ_LiquidGV-mg, thus speed when obtaining stableThe last stabilized speed of bubble, be with bubble radius it is directly proportional, radius is bigger most Attainable speed is bigger afterwards, therefore, can realize the edge periphery of the wafer 201 to be exposed by reducing bubble radius The bobble rise velocity that position generates becomes smaller, and extends bubble rise time.In wafer moving exposure process, bubble is prevented to enter exposure Light optical path improves and exposes defect caused by bubble.In addition, Air Bubble Size in water rate of climb distribution map as indicated by 10, gas The rate of climb of ducking in drink is in bubble diameter 1000um hereinafter, the small rate of climb of diameter is slow.

As an example, the exposure method further includes to remaining in the wafer to be exposed 201 and edge limit liquid dress The step of setting the liquid progress pump drainage in the immersion fluid flow field between 204.

Specifically, the utility model further include in immersion fluid flow field behind the edge of the wafer to be exposed, will be remaining Liquid the step of taking away, the exhaust device that can be such as arranged in the wafer carrier using one carries out, the exhaust device May include a pump drainage pipeline, one end setting of the pump drainage pipeline the wafer to be exposed and edge limit liquid device it Between region in, for the immersion fluid flow field of the position to be passed through after remaining liquid take away, in the embodiment of the utility model, Bubble is generated there may be most of in some residual liquid, an exhaust device is added and takes some residual liquid away, So as to prevent the bubble in this partially liq from turning again in the immersion fluid flow field, and cause to generate shadow to exposure quality It rings.

In conclusion the utility model provides a kind of infiltration type exposure machine device, the infiltration type exposure machine device includes: Wafer carrier, for carrying wafer to be exposed；Immersion fluid forms device, is set to above the wafer to be exposed, is used to form Immersion fluid flow field, wherein exposure light source realizes the exposure to the wafer to be exposed via the immersion fluid flow field；And edge Liquid device is limited, is set in the wafer carrier, and edge limit liquid device is located at the periphery of the wafer to be exposed, and with There is spacing between the outer rim of the wafer to be exposed.Through the above scheme, the utility model passes through immersion fluid current-limiting apparatus Setting, improves the environment of wafer periphery to be exposed, to reduce the gap of crystal round fringes, reduction forms the big of bubble It is small, and then the speed for reducing bubble rising prevents so that wafer, during exposure, bubble will not be taken away by water flow Bubble treats the influence of exposed wafer exposure quality.So the utility model effectively overcomes various shortcoming in the prior art And has high industrial utilization value.

The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.

Claims

1. a kind of infiltration type exposure machine device, which is characterized in that the infiltration type exposure machine device includes:

Wafer carrier, for carrying wafer to be exposed；

Immersion fluid forms device, is set to above the wafer to be exposed, is used to form immersion fluid flow field, wherein exposure light source The exposure to the wafer to be exposed is realized via the immersion fluid flow field；And

Edge limits liquid device, is set in the wafer carrier, and edge limit liquid device is located at the wafer to be exposed Periphery, and there is spacing between the outer rim of the wafer to be exposed.

2. infiltration type exposure machine device according to claim 1, which is characterized in that the edge limit liquid device includes edge Ring, the center of circle of the edge ring and the center of circle of the wafer to be exposed coincide.

3. infiltration type exposure machine device according to claim 2, which is characterized in that the outer diameter of the edge ring, which is greater than, to be corresponded to The outer rim in the immersion fluid flow field on position, the inside radius of the edge ring and the difference of the radius of the wafer to be exposed are less than The height of the wafer to be exposed.

4. infiltration type exposure machine device according to claim 1, which is characterized in that the height of edge limit liquid device with The height of the wafer to be exposed is generally in identical.

5. infiltration type exposure machine device according to claim 1, which is characterized in that edge limit liquid device and it is described to Exposed wafer forms gap on the radial direction along the wafer to be exposed, and the gap is less than 0.8mm.

6. infiltration type exposure machine device according to claim 1, which is characterized in that the material packet of the edge limit liquid device Include waterproof material, the waterproof material includes any one in high molecular polymer and metal-plated hydrophobic film.

7. infiltration type exposure machine device according to claim 6, which is characterized in that the high molecular polymer includes Teflon Any one in dragon, polyethylene and polytetrafluoroethylene (PTFE), the hydrophobic film includes fluorine-contained film.

8. infiltration type exposure machine device according to any one of claims 1-7, which is characterized in that the infiltration type exposes Optical mechanical apparatus further includes exhaust device, and the exhaust device is set in the wafer carrier, wherein the exhaust device is by institute The liquid for stating the remaining immersion fluid flow field between wafer to be exposed and edge limit liquid device is discharged.