CN208780822U - A kind of radiation dosimeter probe and irradiation dose meter systems - Google Patents
A kind of radiation dosimeter probe and irradiation dose meter systems Download PDFInfo
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- CN208780822U CN208780822U CN201820941704.2U CN201820941704U CN208780822U CN 208780822 U CN208780822 U CN 208780822U CN 201820941704 U CN201820941704 U CN 201820941704U CN 208780822 U CN208780822 U CN 208780822U
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- radiation dosimeter
- irradiation dose
- radiation
- dosimeter probe
- meter systems
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Abstract
The utility model discloses a kind of radiation dosimeter probe, and dosimeter probe includes the P-channel LDMOS device based on BCD technique.The invention also discloses a kind of irradiation dose meter systems comprising radiation dosimeter probe, radiation dosimeter probe includes the P-channel LDMOS device based on BCD technique.
Description
Technical field
The utility model relates to semiconducting solid irradiation dose detection technology fields.More particularly, to a kind of irradiation agent
Meter probe and irradiation dose meter systems.
Background technique
With the development of space technology, nuclear technology and strategic arms technology, various electronic equipments are widely used for artificial
In satellite, spaceship, carrier rocket, long-range missile and nuclear weapon control system, the electronic component of electronic equipment is constituted not
Avoidable ground will be among the intense radiations application environment such as space radiation and nuclear radiation, but space charged particle radiation environment has
Complex and variability, satellite transit track is different in addition, and the working environment of ionizing radiation dosimeter is more severe, causes remote
Journey on-line real time monitoring system is difficult to, and entire electronic equipment is made to break down.
Therefore, comprehensive raising of the radiation hardening technical level of device just seems even more important and urgent, wherein most base
One of this task is exactly the collection and research to space radiation environment data, by the collection and research to these data, one
Aspect can simulate space radiation environment in ground artificial, carry out the total dose experimental verification of related component, not only can be big
The big enforcement difficulty for reducing total dose proof scheme, also can be greatly reduced cost；On the other hand, in Space Facilities operation
In by the irradiation doses of real-time monitoring surrounding enviroment, can effectively assess surrounding enviroment degree of danger, can in time, effectively advise
Wind sheltering danger, avoids bigger loss.But the general double grid technique of current radiation dosimeter, MOS technique or SOI technology etc.
PMOS array, process integration is not high, sensitivity is not high, cannot effectively assess the degree of danger of surrounding enviroment, is practical application
Cause hidden danger.
Accordingly, it is desirable to provide the radiation dosimeter probe and irradiation dose of a kind of highly sensitive, high integration and stability
Meter systems.
Utility model content
The purpose of this utility model is to provide the radiation dosimeter probes of a kind of highly sensitive, high integration and stability
And irradiation dose meter systems.
In order to achieve the above objectives, the utility model adopts the following technical solutions:
The one side of the application provides a kind of radiation dosimeter probe, and radiation dosimeter probe includes the P based on BCD technique
Channel LDMOS device.
The grid and drain electrode for being preferably based on the P-channel LDMOS device of BCD technique are shorted and are grounded, and are based on BCD technique
P-channel LDMOS device source electrode be connected to provide biasing circuit, and the output voltage of source electrode as monitoring result export to
Next stage circuit.
Preferably, including above-mentioned radiation dosimeter is popped one's head in.
Preferably, further includes: constant current output circuit pops one's head in radiation dosimeter and provides biasing；And reading circuit, connection
The output end popped one's head in radiation dosimeter.
The grid and drain electrode for being preferably based on the P-channel LDMOS device of BCD technique are shorted and are grounded, and source electrode is connected to greatly
In the bias of threshold value, and the output voltage of source electrode is exported as monitoring result to next stage circuit.
Preferably, reading circuit includes operational amplifier, carries out operation amplifier to the output of radiation dosimeter probe, as
The output of radiation resistance result.
Preferably, reading module further includes that data acquisition circuit shows and/or store radiation resistance result.
The beneficial effects of the utility model are as follows:
The radiation dosimeter probe of a kind of highly sensitive, high integration of technical solution described in the utility model and stability and
Irradiation dose meter systems.
Detailed description of the invention
Specific embodiment of the present utility model is described in further detail with reference to the accompanying drawing；
Fig. 1 is the structural block diagram according to the exemplary irradiation dose meter systems of the application；
Fig. 2 is the sectional view for the schematic structure popped one's head according to the exemplary radiation dosimeter of the application；And
Fig. 3 is the schematic diagram for the operating circuit popped one's head according to the exemplary radiation dosimeter of the application.
Specific embodiment
In order to illustrate more clearly of the utility model, the utility model is done into one below with reference to preferred embodiments and drawings
The explanation of step.Similar component is indicated in attached drawing with identical appended drawing reference.It will be appreciated by those skilled in the art that below
Specifically described content is illustrative and be not restrictive, and should not be limited the protection scope of the present invention.
It should be understood that element or component in the accompanying drawings be merely to show their structural principle or connection relationship, and simultaneously
It is not limited to size.In order to clearly show certain elements or component, partial enlargement may be carried out to it.In the application
In, description, such as " comprising " and " having ", it is open type, expression includes but is not limited to.
Present context is described in detail with reference to the accompanying drawing.
Fig. 1 is the structural block diagram according to the exemplary irradiation dose meter systems 10 of the application.As shown in Figure 1, the application
Exemplary irradiation dose meter systems 10 include radiation dosimeter probe 101, constant current output circuit 103 and read module 105.This Shen
Irradiation dose meter systems 10 please can be applied in space real-time monitoring, space data collection or ground simulating.Its
In, radiation dosimeter probe 101 can be used for monitoring the irradiation dose of surrounding enviroment.Constant current output circuit 103 is irradiation dose
Meter probe 101 provides constant biasing so that the biasings that are provided according to constant current output circuit 103 of radiation dosimeter probe 101,
Different output is generated in response to the irradiation dose of surrounding enviroment.Irradiation response can be read in real time by reading module 105
And feedback.
In the specific implementation, reading module 105 may include operational amplifier 114, and operational amplifier 114 can be such as figure
Such composed structure in 1, i.e. operational amplifier 114 may include computing circuit 111 and amplification output circuit 113, this field
It should be understood to the one skilled in the art that operation output circuit is not limited to this, the structure of other operational amplification circuits is also possible.Operation electricity
The input terminal on road 111 connect with the output end of radiation dosimeter probe 101 and transports to the output of radiation dosimeter probe 101
It calculates, operation includes carrying out high precision computation and error factor amendment to the output of radiation resistance probe 101, by operation electricity
Result after 111 operation of road is transmitted to amplification output circuit 113.Amplification output circuit 113 is to the knot after 111 operation of computing circuit
Fruit signal is amplified and is exported, to obtain the irradiation dose result that radiation dosimeter probe 101 monitors.
Reading module 105 can also include data acquisition circuit 115, and data acquisition circuit 115 can store calculating and repair
The irradiation dose result just obtained with for subsequent space radiation dose study and/or to the irradiation dose result shown with
For device production and test.
In the present embodiment, radiation dosimeter probe 101 includes that (P-channel is laterally double by the P-channel LDMOS based on BCD technique
Diffused metal oxide emiconductor) device.Preferably, in the present embodiment of the application, device used is single chip integrated.With
It is generally basede on PMOS array, the PMOS technique based on double grid technique, the PMOS based on SOI technology or CMOS technology of single grid technique
Differently, BCD (BiCMOS/DMOS) technique is a kind of to combine bipolar, CMOS and DMOS structure monolithic IC manufacture work to technique
Skill.Designer can be in the high-precision analog of bipolar device, the high integration of cmos device and easy of integration and power device
Unrestricted choice and the combination of circuit are carried out between part LDMOS.It is further preferred that selecting BCD technique in embodiments herein
P-channel LDMOS device as radiation dosimeter probe 101, on the basis of meeting above-mentioned high integration, further have P-
The structural advantage of LDMOS device improves the sensitivity and stability of irradiation dose monitoring.Improve irradiation dose meter systems
Performance.
Below with reference to the structure and working principle of Fig. 2 and Fig. 3 detailed description radiation dosimeter probe 101.Wherein, Fig. 2 is
According to the sectional view of the schematic structure 20 of the exemplary radiation dosimeter of the application probe 101；And Fig. 3 is according to the application
Exemplary radiation dosimeter probe 101 operating circuit 30 schematic diagram.
As shown in Fig. 2, the irradiation dose probe 101 that the P-channel LDMOS device of the BCD technique of the application is constituted is to include
Grid G, source S, drain D and substrate B four-terminal device.Including N trap 201, p-well 203, field specifically, in the present embodiment,
Oxygen 205 and oxide layer 207.LDMOS is a kind of double diffusion structure device, is injected twice in identical source/drain region, primary to inject
Larger (the typical implantation dosage 10 of concentration15cm-2) arsenic (As), another secondary smaller (typical doses 10 of implantation concentration13cm-2) boron
(B).A high temperature progradation is carried out again after injection, since boron diffusion ratio arsenic is fast, so can be along cross under grid boundary
To farther (p-well 203 in figure) is spread, be formed with the channel of concentration gradient, its channel length by this horizontal proliferation twice away from
From its poor decision.LDMOS device is usually readily formed 0.4 to 2 μm of channel length.
Whether PMOS array or P-channel LDMOS device, due to having field oxygen under their grid tap, when its by
When space charged particle radiates, under the action of ionising radiation extra electric field, oxide turns irradiation dose in gate oxide
Charge is turned to, positive trapped charge is accumulated, marks the conducting channel for forming n+ under oxygen (as indicated by a dashed arrow in the figure
The conducting channel of LDMOS).This will lead to the drift of device threshold voltage, and near-linear is presented in the amplitude and irradiation dose of drift
Dull corresponding relationship, real-time monitoring, under same case, linear region can be realized by ball bearing made using such property
Wide device sensitivity is high.
The linear region of PMOS array is narrow and wants that field oxide thickness can only theoretically be thickeied by widening linear region, but in this way
Process the influence for widening linear zone is also limited.And the long conducting channel structure of P-channel LDMOS makes sensitivity significantly
It improves, the monitoring carried out by P-channel LDMOS device improves the accuracy and accuracy of monitoring.
In embodiments herein, radiation dosimeter probe 101 can carry out spoke according to circuit topology shown in Fig. 3
According to dose monitoring.As shown, P-channel LDMOS device M is radiation dosimeter 101, by the grid G of P-channel LDMOS device M and
Drain D is shorted and is connected to the ground, source S access biasing.Preferably, the biasing by current source as source S, in Fig. 3, electric current
Source is connect by switch SW with source S.It will be understood by those skilled in the art that embodiments herein is not limited to this, it can also be straight
It connects and is connect with source S, as long as bias current can be provided for source S.Preferably, current source can be high-precision for that can provide
The constant current source of stabling current is spent, the bias voltage provided is greater than threshold voltage, and provided biasing makes P-channel LDMOS
Device M works in saturation region.
Specifically, source region is connected to the fixed-bias transistor circuit that can be greater than threshold value, can thus be biased in P-LDMOS device M full
And area, according to the available following formula (1) of saturation region current formula:
V can be derived by (1)oThe expression formula at end:
It follows that if applying a constant electric current to the P-channel LDMOS device M drain D for being biased in saturation region,
The variation of the voltage change approximate representation P-channel LDMOS device threshold voltage of drain D then can be used.Accordingly, it is possible to pass through measurement
Caused by thering is the P-channel LDMOS device M saturated mode drain voltage of constant biasing to carry out real-time characterization because of irradiation ionization total-dose irradiation
The variation of device threshold voltage drift.It only needs to acquire single voltage value V in this wayo, monitoring system and biasing circuit are wanted
Asking just reduces, and easily controllable, high reliablity, and such mode can be in the sensitivity for meeting space flight device and equipment design specification
Requirement under, to the greatest extent simplify dosimeter telemetry circuit.
Obviously, the above embodiments of the present invention is merely examples for clearly illustrating the present invention, and
It is not limitations of the embodiments of the present invention, for those of ordinary skill in the art, in above description
On the basis of can also make other variations or changes in different ways, all embodiments can not be exhaustive here,
It is all to belong to obvious changes or variations that the technical solution of the utility model is extended out still in the utility model
The column of protection scope.
Claims (5)
1. a kind of radiation dosimeter probe, which is characterized in that the radiation dosimeter probe includes the P-channel based on BCD technique
LDMOS device,
The grid of the P-channel LDMOS device based on BCD technique and drain electrode are shorted and are grounded, the P-channel based on BCD technique
The source electrode of LDMOS device, which is connected to, provides the circuit of biasing, and the output voltage of the source electrode is exported as monitoring result under
Primary circuit.
2. a kind of irradiation dose meter systems, which is characterized in that pop one's head in including radiation dosimeter as described in claim 1.
3. irradiation dose meter systems as claimed in claim 2, which is characterized in that further include:
Constant current output circuit, Xiang Suoshu radiation dosimeter probe provide biasing；And
Reading circuit is connected to the output end of the radiation dosimeter probe.
4. irradiation dose meter systems as claimed in claim 3, which is characterized in that the reading circuit includes operational amplifier,
Operation amplifier is carried out to the output of radiation dosimeter probe, is exported as radiation resistance result.
5. irradiation dose meter systems as claimed in claim 4, which is characterized in that the reading circuit further includes data acquisition electricity
Road shows and/or stores the radiation resistance result.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820941704.2U CN208780822U (en) | 2018-06-19 | 2018-06-19 | A kind of radiation dosimeter probe and irradiation dose meter systems |
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| CN201820941704.2U CN208780822U (en) | 2018-06-19 | 2018-06-19 | A kind of radiation dosimeter probe and irradiation dose meter systems |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111008506A (en) * | 2019-11-30 | 2020-04-14 | 中国科学院新疆理化技术研究所 | 6-T storage unit total dose resisting reinforcement method based on threshold voltage type matching |
-
2018
- 2018-06-19 CN CN201820941704.2U patent/CN208780822U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111008506A (en) * | 2019-11-30 | 2020-04-14 | 中国科学院新疆理化技术研究所 | 6-T storage unit total dose resisting reinforcement method based on threshold voltage type matching |
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