CN208707547U - A kind of double Buck/Boost current transformers of three-phase modified based on SiC diode - Google Patents
A kind of double Buck/Boost current transformers of three-phase modified based on SiC diode Download PDFInfo
- Publication number
- CN208707547U CN208707547U CN201821112326.3U CN201821112326U CN208707547U CN 208707547 U CN208707547 U CN 208707547U CN 201821112326 U CN201821112326 U CN 201821112326U CN 208707547 U CN208707547 U CN 208707547U
- Authority
- CN
- China
- Prior art keywords
- phase
- igbt
- bridge
- inductance
- filter inductance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 239000003990 capacitor Substances 0.000 claims description 47
- 230000007935 neutral effect Effects 0.000 claims description 30
- 230000005611 electricity Effects 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims 1
- 230000004075 alteration Effects 0.000 abstract description 4
- 230000002459 sustained effect Effects 0.000 description 17
- 230000001965 increasing effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
Landscapes
- Inverter Devices (AREA)
- Rectifiers (AREA)
Abstract
The current transformer of the double Buck/Boost of the three-phase modified that the utility model discloses a kind of based on SiC diode, including the exchange IGBT of bridge IGBT pipe, corresponding external freewheeling diode and Opposite direction connection is switched above and below three-phase；It exchanges side and LCL filter circuit is arranged, and the inductance of LCL filter circuit transformer side is made of two independent inductance.Without dead zone between IGBT pipe above and below the utility model, the two-way flow of energy not only may be implemented, effectively reduce the current harmonics of exchange side and the power loss of circuit, furthermore, by the exchange IGBT switch that Opposite direction connection is arranged, current zero-crossing point aberration rate can be reduced, working efficiency and working performance are improved.
Description
Technical field
The research of the double Buck/Boost current transformers of the three-phase modified that the utility model relates to a kind of based on SiC diode,
Belong to the technical field of electronic power convertor.
Background technique
With the development of new energy technology, the high power occasion in photovoltaic power generation, wind-powered electricity generation, electric automobile charging pile etc., three
Phase AC/DC current transformer is all widely used, it has also become the important equipment of generation of electricity by new energy and power quality controlling, market
Demand is more urgent, is the hot spot of current power electronics field.Therefore, optimize the waveform quality of three-phase AC/DC current transformer,
Functional reliability is improved, the research work such as converter topology is improved and has great importance.
The advantages that traditional silicon substrate IGBT three-phase bridge converter is stable, convenient for controlling with its performance has obtained widely answering
With.However its every mutually upper and lower bridge arm power tube is connected directly, and be there are problems that Switch Cut-through, is influenced functional reliability.It is straight to avoid
It is logical, it is necessary to dead zone is added to complementary bridge arm driving signal, introduces additional low-frequency harmonics, increase the volume of filter at
This；In addition, silicon substrate IGBT has more reverse recovery current to flow through complementary power pipe in switching time, not only increase its loss,
It is also easy to lead to its improper IGBT locking, causes failure and be easy to produce current zero-crossing point distortion simultaneously.
Utility model content
Technical problem to be solved in the utility model is deficiency in the prior art, provides a kind of no setting is required dead zone,
Reduce the current transformer of exchange side low-frequency harmonics and the low double Buck/Boost of three-phase modified of current zero-crossing point aberration rate.
In order to solve the above technical problems, the utility model provides a kind of double Buck/ of the three-phase modified based on SiC diode
The current transformer of Boost, including including DC bus capacitor Cin1 and Cin2, bridge IGBT pipe S in A phasea1, bridge IGBT pipe S under A phasea2, hand over
Flow IGBT switch Sa3And Sa4, bridge IGBT pipe S in B phaseb1, bridge IGBT pipe S under B phaseb2, exchange IGBT switch Sb3And Sb4, in C phase
Bridge IGBT pipe Sc1, bridge IGBT pipe S under C phasec2, exchange IGBT switch Sc3And Sc4, A Xiang Shangqiao sustained diodea1, bridge under A phase
Sustained diodea2, B Xiang Shangqiao sustained diodeb1, bridge sustained diode under B phaseb2, C Xiang Shangqiao sustained diodec1, C phase
Lower bridge sustained diodec2；Bridge IGBT pipe S in the A phasea1With bridge sustained diode under A phasea2Cathode be connected in tie point
Oa, A Xiang Shangqiao sustained diodea1Anode and bridge IGBT pipe S under A phasea2It is connected in tie point Ma, bridge IGBT in the B phase
Pipe Sb1With bridge sustained diode under B phaseb2Cathode be connected in tie point tie point Ob, B Xiang Shangqiao sustained diodeb1Sun
Pole and bridge IGBT pipe S under B phasea2It is connected in tie point tie point Mb, bridge IGBT pipe S in the C phasec1With two pole of bridge afterflow under C phase
Pipe Dc2Cathode be connected in tie point Oc, C Xiang Shangqiao sustained diodec1Anode and bridge IGBT pipe S under C phasec2The company of being connected in
Contact Mc；The A phase OaIncrease IGBTS between direct current capacitors and mains neutral point N 'a3, Sa3The pole E be connected in Oa, Sa3
The pole C be connected in direct current capacitors and mains neutral point N ', A phase MaIncrease between direct current capacitors and mains neutral point N '
IGBTSa4, Sa4The pole C be connected in Ma, Sa4The pole E be connected in direct current capacitors and mains neutral point N ', B phase ObAnd DC capacitor
Increase IGBTS between device and mains neutral point N 'b3, Sb3The pole E be connected in Ob, Sb3The pole C be connected in direct current capacitors and power supply
Neutral point N ', B phase MbIncrease IGBTS between direct current capacitors and mains neutral point N 'b4, Sb4The pole C be connected in Mb, Sb4E
Pole is connected in direct current capacitors and mains neutral point N ', C phase OcIncrease between direct current capacitors and mains neutral point N '
IGBTSc3, Sc3The pole E be connected in Oc, Sc3The pole C be connected in direct current capacitors and mains neutral point N ', C phase McAnd DC capacitor
Increase IGBTS between device and mains neutral point N 'c4, Sc4The pole C be connected in Mc, Sc4The pole E be connected in direct current capacitors and electricity
Source neutral point N '.
The A Xiang Shangqiao sustained diodea1, bridge sustained diode under A phasea2, B Xiang Shangqiao sustained diodeb1, B phase
Lower bridge sustained diodeb2, C Xiang Shangqiao sustained diodec1And bridge sustained diode under C phasec2It is all made of SiC Schottky two
Pole pipe.
Exchange side is LCL filter circuit, and the LCL filter circuit includes current transformer side the first filter inductance La1, become
Flow the second filter inductance of device side La2, current transformer side third filter inductance Lb1, the 4th filter inductance L of current transformer sideb2, current transformer side
5th filter inductance Lc1, the 6th filter inductance L of current transformer sidec2, the first inductance of net side Lag, the second inductance of net side Lbg, third inductance
LcgAnd net side filter capacitor；
Bridge IGBT pipe S2 passes through concatenated first filter inductance L under bridge IGBT pipe S1 and A phase in the A phasea1With the second filter
Wave inductance La2It is connected, bridge IGBT pipe S4 passes through concatenated third filter inductance L under bridge IGBT pipe S3 and B phase in B phaseb1With the 4th
Filter inductance Lb2It is connected, bridge IGBT pipe S6 passes through concatenated 5th filter inductance L under bridge IGBT pipe S5 and C phase in C phasec1With
6th filter inductance Lc2It is connected；
First filter inductance La1With the second filter inductance La2The intermediate node of line passes through the first inductance of net side LagIt is connected to
Output end；
Third filter inductance Lb1With the 4th filter inductance Lb2The intermediate node of line passes through the second inductance of net side LbgIt is connected to
Output end；
5th filter inductance Lc1With the 6th filter inductance Lc2The intermediate node of line passes through net side third inductance Lcg, connection
To output end.The first filter inductance La1With current transformer side the second filter inductance La2, current transformer side third filter inductance Lb1With
The 4th filter inductance L of current transformer sideb2And the 5th filter inductance L of current transformer sidec1With the 6th filter inductance L of current transformer sidec2For
Separate inductor.
The utility model is achieved the utility model has the advantages that the utility model is up and down between IGBT pipe without dead zone, not only can be real
The two-way flow of existing energy effectively reduces the current harmonics of exchange side and the power loss and wave filter on AC side of circuit
Volume and cost, reduce current zero-crossing point aberration rate by increasing reversed IGBT, improve working efficiency and working performance.
Detailed description of the invention
Fig. 1 is the converter structure figure of the double Buck/Boost of the utility model three-phase modified；
Fig. 2 is S in the utility model embodimenta1Conducting, Sa2Shutdown, Da1Forward current access figure when cut-off；
Fig. 3 is S in the utility model embodimenta1Shutdown, Sa2Shutdown, Da2Forward current access figure when conducting；
Fig. 4 is S in the utility model embodimenta2Shutdown, Sa1Shutdown, Da1Negative current access figure when conducting；
Fig. 5 is S in the utility model embodimenta2Conducting, Sa1Shutdown, Da2Negative current access figure when cut-off；
Fig. 6 is S in the utility model embodimenta1Conducting, Sa2Shutdown, Sa4Forward current access figure when conducting；
Fig. 7 is S in the utility model embodimenta2Conducting, Sa1Shutdown, Sa3Negative current access figure when conducting.
Specific embodiment
The utility model is further described with reference to the accompanying drawing.Following embodiment is only used for clearly illustrating this
The technical solution of utility model, and cannot be used as a limitation the limitation protection scope of the utility model.
Fig. 1 shows the converter structure figure of the double Buck/Boost of three-phase；Symbol in Fig. 1 has following explanation:
Cin1~Cin2: DC side electrolytic capacitor,
Sx1~Sx2: three-phase upper and lower bridge arm power IGBT manages (x=a, b, c),
Sx3~Sx4: the reversed IGBT switch (x=a, b, c) of three-phase bridge arm,
Dx1~Dx2: external afterflow SiC diode (x=a, b, c),
La1、La2~Lc1、Lc2: three-phase filters separate inductor,
Ca~Cc: ac filter capacitor,
Lag~Lcg: net side inductance,
ia1、ia2: flow through inductance La1、La2Electric current,
Iar: being equal to the current transformer side inductive current of LCL filter,
Ua~Uc:a~c phase exchange side voltage,
N ' is direct current capacitors and mains neutral point,
N " is filter condenser neutral point,
Cin1And Cin2For the electrolytic capacitor of DC side, Instantaneous input power is balanced as energy storage link；Exchange side is LCL
Filter circuit, Sx1And Sx2(x=a, b, c) is respectively the upper and lower bridge arm power IGBT pipe of three-phase, corresponding external afterflow two
Pole pipe is respectively Dx2And Dx1(x=a, b, c), Dx2And Dx1(x=a, b, c) is all made of SiC Schottky diode.A is connected contact
IGBTS is increased separately between Oa, Ma and capacitor neutral pointa3And Sa4, B phase Oa, Ma and direct current capacitors and mains neutral point N ' it
Between increase separately IGBTSb3And Sb4, IGBTS is increased separately between C phase Oa, Ma and direct current capacitors and mains neutral point N 'c3With
Sc4, above-mentioned Sa3And Sa4, Sb3And Sb4, Sc3And Sc4It is only switched in current over-zero point moment, therefore relatively main IGBT, Sa1And Sa2, Sb1
And Sb2, Sc1And Sc2Its capacity is smaller.A phase exchanges IGBT switch Sa3And Sa4, B phase exchange IGBT switch Sb3And Sb4And C intersection
Flow IGBT switch Sc3And Sc4Current capacity is the 5% of other IGBT current capacities.
LCL filter circuit is by separate inductor Lx1、Lx2, net side inductance Lgx, filter capacitor Cx (x=a, b, c) composition.
By taking A phase as an example, current transformer side filter inductance La1And La2, inductance value is equal, by using two separate inductors in structure.A phase
Upper and lower bridge arm power IGBT pipe Sa1、Sa2It is then to pass through La1And La2The two exchange side filter inductances are connected, and avoid straight-through
Problem it is not necessary that dead zone is added in driving signal, and then reduces the low-frequency harmonics of exchange side.
Below in conjunction with Detailed description of the invention the utility model circuit under different conduction modes current path figure.
Either rectification or inversion, the driving signal shielded under half period control model is that upper tube corresponds to electric current always
Negative half period, down tube corresponding current positive half cycle, therefore can be divided by the positive and negative and change rate of electric current 0~T/4, T/4~T/2, T/2~
3T/4,3T/4~working region T tetra-.In addition, allowing for the distortion at effective control current zero-crossing point near zero-crossing point
The mode that the double IGBT pipes of of short duration use simultaneously turn on.
When electric current is positive direction, upper bridge arm power IGBT pipe Sa1Driving signal it is not maskable, corresponding region I and region
IV, current path is as shown in Fig. 2-Fig. 3；When electric current is negative direction, lower bridge arm power IGBT pipe Sa2Driving signal can not shield
It covers, corresponding region II and region III, current path is as shown in fig. 4-5.
1) region I (0~T/4)
Region I corresponds to iar positive half cycle, switch state when fundamental wave value size reduces.
Work as Sa1Conducting, Sa2When disconnection, due to three-phase balance, B, C phase current circulate naturally, as shown in Fig. 2, Ma point
Current potential is lower than P point current potential, Da1It is unable to afterflow conducting and flows through La although ac-side current fundametal compoment reduces1Electric current ia1
Instantaneous value increases.
Work as Sa1It disconnects, Sa2When disconnection, due to three-phase balance, B, C phase current circulate naturally, as shown in figure 3, Da2It is continuous
Conductance is logical, and Ma point current potential is lower than P point current potential, Da1It is unable to afterflow conducting, flows through La1Electric current ia1Instantaneous value reduces.
Pass through Sa1Turn-on and turn-off and Da2Afterflow conducting may be implemented the PWM modulation of electric current positive half-wave, make electric current
Shape Long-term change trend as needed, should during an only high-frequency I GBTSa1Movement, and that no setting is required between upper and lower bridge arm is dead
Area reduces the low-frequency harmonics of exchange side.
When positive current goes to zero, S at this timea2It disconnects, Sa1When conducting, due to three-phase balance, B, C phase current are natural
Circulation, as shown in fig. 6, conducting Sa4, Oa point current potential is higher than N point current potential, Da2It is unable to afterflow conducting, Ma point current potential is lower than P point electricity
Position, Da1It is unable to afterflow conducting, at this point, the general voltage of DC bus is added between inductance La1 and La2, La2 electric current is caused to increase
Add, portion of electrical current flows through Sa4, which can be used for controlling the distortion of electric current positive zero crossing.Under the mode, Sa4Circulation
Electric current is only the low current of near zero-crossing point, therefore the capacity of the IGBT is smaller, simultaneously as the voltage change of IGBT is only at this time
It is the half of DC bus, therefore the switching loss under the mode is smaller, further, since the restriction effect of inductance La1 and La2,
Sa1And Sa4Between be not required to be arranged stringent dead zone, control fairly simple.
2) region II (T/4~T/2)
Region II corresponds to iar negative half period, switch state when fundamental wave value size increases.
Work as Sa2It disconnects, Sa1When disconnection, due to three-phase balance, B, C phase current circulate naturally, as shown in figure 4, Da1It is continuous
Conductance is logical, and Oa point current potential is higher than N point current potential, Da2It is unable to afterflow conducting, flows through La2Electric current ia2Instantaneous value reduces.
Work as Sa2Conducting, Sa1When disconnection, due to three-phase balance, B, C phase current circulate naturally, as shown in figure 5, Ma point
Current potential is higher than N point current potential, Da2It is unable to afterflow conducting and flows through La although ac-side current fundametal compoment increases2Electric current ia2
Instantaneous value increases.
Pass through Sa2Turn-on and turn-off and Da1Afterflow conducting, may be implemented the PWM modulation of electric current positive half-wave, makes electric current
The Long-term change trend of shape as needed should only have a high-frequency I GBTS in the processa2Movement, and that no setting is required between upper and lower bridge arm is dead
Area reduces the low-frequency harmonics of exchange side.
When negative current goes to zero, S at this timea1It disconnects, Sa2When conducting, due to three-phase balance, B, C phase current are natural
Circulation, as shown in fig. 7, conducting Sa3, Oa point current potential is higher than N point current potential, Da2It is unable to afterflow conducting, Ma point current potential is lower than P point electricity
Position, Da1It is unable to afterflow conducting, at this point, the general voltage of DC bus is added between inductance La1 and La2, La1 electric current is caused to increase
Add, portion of electrical current flows through Sa3, which can be used for controlling the distortion of electric current positive zero crossing.Under the mode, Sa3Circulation
Electric current is only the low current of near zero-crossing point, therefore the capacity of the IGBT is smaller, simultaneously as the voltage change of IGBT is only at this time
It is the half of DC bus, therefore the switching loss under the mode is smaller, further, since the restriction effect of inductance La1 and La2,
Sa2And Sa3Between be not required to be arranged stringent dead zone, control fairly simple.
3) region III (T/2~T3/4)
Region III is identical as region II, switch state when fundamental wave value size increases.
4) region IV (3T/4~T)
Region IV is identical as region I, switch state when fundamental wave value size reduces.
The two-way flow of energy not only may be implemented, effectively reduce without dead zone between IGBT pipe above and below the utility model
The current harmonics of side and the power loss of circuit are exchanged, in addition, electricity can be reduced by the exchange IGBT switch of setting Opposite direction connection
Zero point aberration rate is flowed through, working efficiency and working performance are improved.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
For art personnel, without deviating from the technical principle of the utility model, several improvement and deformations can also be made, these change
It also should be regarded as the protection scope of the utility model into deformation.
Claims (9)
1. a kind of current transformer of the double Buck/Boost of the three-phase modified based on SiC diode, including DC side with exchange side,
It is characterized in, including DC bus capacitor (Cin1) and (Cin2), bridge IGBT manages (S in A phasea1), bridge IGBT manages (S under A phasea2), A intersection
It flows IGBT and switchs (Sa3) IGBT switch (S is exchanged with A phasea4), bridge IGBT manages (S in B phaseb1), bridge IGBT manages (S under B phaseb2), B phase
It exchanges IGBT and switchs (Sb3) IGBT switch (S is exchanged with B phaseb4), bridge IGBT manages (S in C phasec1), bridge IGBT manages (S under C phasec2)、C
Mutually exchange IGBT switchs (Sc3) IGBT switch (S is exchanged with C phasec4), A Xiang Shangqiao freewheeling diode (Da1), bridge afterflow two under A phase
Pole pipe (Da2), B Xiang Shangqiao freewheeling diode (Db1), bridge freewheeling diode (D under B phaseb2), C Xiang Shangqiao freewheeling diode (Dc1)、C
Bridge freewheeling diode (D under phasec2)；
Bridge IGBT manages (S in the A phasea1) the pole E and bridge freewheeling diode (D under A phasea2) cathode be connected in tie point Oa, A phase
Upper bridge freewheeling diode (Da1) anode and under A phase bridge IGBT manage (Sa2) C be connected in tie point Ma, bridge IGBT in the B phase
Manage (Sb1) the pole E and bridge freewheeling diode (D under B phaseb2) cathode be connected in tie point Ob, B Xiang Shangqiao freewheeling diode (Db1)
Anode and under B phase bridge IGBT manage (Sa2) the pole C be connected in tie point Mb, bridge IGBT manages (S in the C phasec1) the pole E and C phase
Lower bridge freewheeling diode (Dc2) cathode be connected in tie point Oc, C Xiang Shangqiao freewheeling diode (Dc1) anode and bridge under C phase
IGBT manages (Sc2) the pole C be connected in tie point Mc；
A is connected contact OaA phase is connected between direct current capacitors and mains neutral point (N ') exchanges IGBT switch (Sa3), the A
Mutually exchange IGBT switchs (Sa3) the pole E be connected in tie point OaAnd the pole C is connected in direct current capacitors and mains neutral point (N '), A
Be connected contact MaA phase is connected between direct current capacitors and mains neutral point (N ') exchanges IGBT switch (Sa4), the A phase exchanges
IGBT switchs (Sa4) the pole C be connected in tie point Ma, A phase exchange IGBT switch (Sa4) the pole E be connected in direct current capacitors and electricity
Source neutral point (N ')；B is connected contact ObB phase is connected between direct current capacitors and mains neutral point (N ') exchanges IGBT switch
(Sb3), the B phase exchanges IGBT switch (Sb3) the pole E be connected in tie point Ob, B phase exchange IGBT switch (Sb3) C extremely be connected
In direct current capacitors and mains neutral point (N '), B is connected contact MbB is connected between direct current capacitors and mains neutral point (N ')
Mutually exchange IGBT switchs (Sb4), the B phase exchanges IGBT switch (Sb4) the pole C be connected in tie point Mb, B phase exchange IGBT switch
(Sb4) the pole E be connected in direct current capacitors and mains neutral point (N ')；C is connected contact OcWith direct current capacitors and mains neutral point
C phase is connected between (N ') exchanges IGBT switch (Sc3), the C phase exchanges IGBT switch (Sc3) the pole E be connected in tie point Oc、C
Mutually exchange IGBT switchs (Sc3) the pole C be connected in direct current capacitors and mains neutral point (N '), C is connected contact McAnd DC capacitor
Increase C phase between device and mains neutral point (N ') and exchanges IGBT switch (Sc4), the C phase exchanges IGBT switch (Sc4) the pole C phase
It is connected in tie point Mc, C phase exchange IGBT switch (Sc4) the pole E be connected in direct current capacitors and mains neutral point (N ')；
The A Xiang Shangqiao freewheeling diode (Da1), bridge freewheeling diode (D under A phasea2), B Xiang Shangqiao freewheeling diode (Db1)、B
Bridge freewheeling diode (D under phaseb2), C Xiang Shangqiao freewheeling diode (Dc1) and C phase under bridge freewheeling diode (Dc2) it is all made of Xiao SiC
Special based diode.
2. the current transformer of the double uck/Boost of the three-phase modified according to claim 1 based on SiC diode, feature
It is, the exchange side is LCL filter circuit, and the LCL filter circuit includes current transformer side the first filter inductance (La1)、
Current transformer side the second filter inductance (La2), current transformer side third filter inductance (Lb1), the 4th filter inductance (L of current transformer sideb2)、
The 5th filter inductance (L of current transformer sidec1), the 6th filter inductance (L of current transformer sidec2), the first inductance of net side (Lag), net side second
Inductance (Lbg), net side third inductance (Lcg) and net side filter capacitor.
3. the current transformer of the double Buck/Boost of the three-phase modified according to claim 2 based on SiC diode, feature
It is, the first filter inductance (La1) and current transformer side the second filter inductance (La2), current transformer side third filter inductance (Lb1)
With the 4th filter inductance (L of current transformer sideb2) and the 5th filter inductance (L of current transformer sidec1) and the 6th filter inductance of current transformer side
(Lc2) it is separate inductor.
4. according to the current transformer of any double Buck/Boost of the three-phase modified based on SiC diode of claim 3,
It is characterized in that, bridge IGBT manages (S in the A phasea1) and A phase under bridge IGBT manage (Sa2) pass through concatenated first filter inductance (La1)
With the second filter inductance (La2) be connected, bridge IGBT manages bridge IGBT pipe (Sb2) under (Sb1) and B phase and is filtered by concatenated third in B phase
Wave inductance (Lb1) and the 4th filter inductance (Lb2) be connected, bridge IGBT manages bridge IGBT pipe (Sc2) under (Sc1) and C phase and passes through in C phase
Concatenated 5th filter inductance (Lc1) and the 6th filter inductance (Lc2) be connected.
5. the current transformer of the double Buck/Boost of the three-phase modified according to claim 4 based on SiC diode, feature
It is, the first filter inductance (La1) one end be connected to tie point Oa, the other end is series at the second filter inductance (La2), institute
State the second filter inductance (La2) the other end be connected to tie point Ma；
Third filter inductance (the Lb1) one end be connected to tie point Ob, the other end is series at the 4th filter inductance (Lb2), institute
State the 4th filter inductance (Lb2) the other end be connected to tie point Mb；
5th filter inductance (the Lc1) one end be connected to tie point Oc, the 6th filter inductance (L of other end connectionc2), it is described
6th filter inductance (Lc2) the other end connect tie point Mc。
6. the current transformer of the double Buck/Boost of the three-phase modified according to claim 4 based on SiC diode, feature
It is,
First filter inductance (La1) and the second filter inductance (La2) line intermediate node pass through the first inductance of net side (Lag) connection
To output end；
Third filter inductance (Lb1) and the 4th filter inductance (Lb2) line intermediate node pass through the second inductance of net side (Lbg) connection
To output end；
5th filter inductance (Lc1) and the 6th filter inductance (Lc2) line intermediate node pass through net side third inductance (Lcg) connection
To output end.
7. the current transformer of the double Buck/Boost of the three-phase modified according to claim 2 based on SiC diode, feature
It is, it includes the first filter capacitor (C that net, which surveys filter capacitor,a), the second filter capacitor (Cb) and third filter capacitor (Cc)；It is described
First filter capacitor (Ca) one end be connected to the first filter inductance (La1) and the second filter inductance (La2) line intermediate node
With grid side inductance LagBetween；
Second filter capacitor (the Cb) one end be connected to third filter inductance (Lb1) and the 4th filter inductance (Lb2) line
Intermediate node and grid side inductance LbgBetween；
Third filter capacitor (the Cc) one end be connected to the 5th filter inductance (Lc1) and the 6th filter inductance (Lc2) line
Intermediate node and grid side inductance LcgBetween.
8. the current transformer of the double Buck/Boost of the three-phase modified according to claim 7 based on SiC diode, feature
It is, the first filter capacitor (Ca), the second filter capacitor (Cb) and third filter capacitor (Cc) the other end all connect filtering
Capacitor neutral point (N ").
9. the unsteady flow of any double Buck/Boost of the three-phase modified based on SiC diode according to claim 1~8
Device, which is characterized in that the A phase exchanges IGBT switch (Sa3) IGBT switch (S is exchanged with A phasea4), B phase exchange IGBT switch
(Sb3) IGBT switch (S is exchanged with B phaseb4) and C phase exchange IGBT switch (Sc3) IGBT switch (S is exchanged with C phasec4) electric current appearance
Amount is the 5% of other IGBT current capacities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821112326.3U CN208707547U (en) | 2018-07-13 | 2018-07-13 | A kind of double Buck/Boost current transformers of three-phase modified based on SiC diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821112326.3U CN208707547U (en) | 2018-07-13 | 2018-07-13 | A kind of double Buck/Boost current transformers of three-phase modified based on SiC diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208707547U true CN208707547U (en) | 2019-04-05 |
Family
ID=65938120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821112326.3U Withdrawn - After Issue CN208707547U (en) | 2018-07-13 | 2018-07-13 | A kind of double Buck/Boost current transformers of three-phase modified based on SiC diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208707547U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108683345A (en) * | 2018-07-13 | 2018-10-19 | 南京德汇电气有限责任公司 | A kind of double Buck/Boost current transformers of three-phase modified based on SiC diodes |
-
2018
- 2018-07-13 CN CN201821112326.3U patent/CN208707547U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108683345A (en) * | 2018-07-13 | 2018-10-19 | 南京德汇电气有限责任公司 | A kind of double Buck/Boost current transformers of three-phase modified based on SiC diodes |
| CN108683345B (en) * | 2018-07-13 | 2024-01-05 | 南京德汇电气有限责任公司 | Three-phase improved double-Buck/Boost converter based on SiC diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2016119736A1 (en) | Five-level topology unit and five-level inverter | |
| CN205283423U (en) | Three -phase PFC rectifier circuit | |
| CN103916040B (en) | Inverter topological circuit, inverting method and inverter | |
| WO2021208274A1 (en) | Power factor adjustment architecture applicable to single-phase/three-phase power grid, and control method therefor | |
| CN102158072B (en) | Power inverter of parallel-connected electric bridge type impedance network | |
| CN107809182A (en) | A kind of buck-boost grid-connected inverter | |
| CN109149986A (en) | The hybrid Modular multilevel converter of one type, three level and its control method | |
| CN106169885B (en) | A kind of switch of tandem type six multi-electrical level inverter | |
| CN103107728A (en) | Voltage and current mixed source type grid-connected inverter topology | |
| CN107070196A (en) | A kind of three-phase PFC rectification circuits with center line | |
| CN108683345B (en) | Three-phase improved double-Buck/Boost converter based on SiC diode | |
| CN104682762B (en) | Low-leakage-current grid-connected inverter | |
| CN102185491B (en) | Serial and parallel connection electrical bridge type impedance network power converter | |
| CN208707547U (en) | A kind of double Buck/Boost current transformers of three-phase modified based on SiC diode | |
| CN103269174B (en) | A kind of single-phase photovoltaic grid-connected inverter of low common-mode voltage | |
| CN106899203A (en) | Positive activation type five-electrical level inverter | |
| CN104967304B (en) | One kind is based on no bridge CUK isolated form Three Phase Power Factor Correction Converters | |
| CN110829868A (en) | Forward swiss rectifier based on resonance reset isolation | |
| CN105429452A (en) | Common-mode rejection dual-Boost bridgeless PFC converter | |
| CN110165923A (en) | A kind of inverter circuit | |
| CN205986613U (en) | Crisscross parallelly connected power factor correction circuit of three -phase | |
| CN215268097U (en) | Inverter and photovoltaic equipment | |
| CN112701905B (en) | Single-phase three-level power factor correction circuit based on pseudo totem-pole structure | |
| CN104811076A (en) | Inverter and control method thereof | |
| CN205212694U (en) | Two boost of common mode rejection do not have bridge PFC converter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20190405 Effective date of abandoning: 20240105 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20190405 Effective date of abandoning: 20240105 |