CN208674073U - Wafer drying device - Google Patents
Wafer drying device Download PDFInfo
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- CN208674073U CN208674073U CN201821242988.2U CN201821242988U CN208674073U CN 208674073 U CN208674073 U CN 208674073U CN 201821242988 U CN201821242988 U CN 201821242988U CN 208674073 U CN208674073 U CN 208674073U
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- gas
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- drying device
- temperature
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Abstract
The utility model is related to a kind of wafer drying device, including mechanical arm and gas nozzle, wherein the mechanical arm include can rocking section, and it is described can rocking section can be waved relative to wafer to be dried;The gas nozzle be installed on the mechanical arm can rocking section, can heat drying wafer gas, and spray the gas after heating towards wafer to be dried.Mechanical arm gas nozzle can be arranged in rocking section in above-mentioned wafer drying device, make the gas nozzle that can spray the gas after heating towards wafer to be dried when waving, high-temperature gas after making heating comes into full contact with wafer to be dried, by the water stain drying of crystal column surface to be dried, to eliminate water stain residual, the remaining water stain influence to subsequent technique process is reduced, product yield is improved.
Description
Technical field
The utility model relates to wafer processing and manufacturing field more particularly to a kind of wafer drying devices.
Background technique
Wafer crystal edge trim after drying process be by rotation motor drive wafer rotation, by crystal column surface go from
The process of sub- water drying.Crystal column surface may cause there are remaining water stain, to rear using the drying that rotation mode carries out wafer
Continuous technical process has an impact, and reduces the yields of product.
There is provided it is a kind of can eliminate water stain residual, reduce drying wafer it is incomplete caused by influence to subsequent technique, mention
The wafer drying device of high product yields is this field urgent problem to be solved.
Utility model content
The purpose of this utility model is to provide a kind of wafer drying devices, and it is dry can to eliminate water stain residual, reduction wafer
The dry not exclusively influence caused by subsequent technique improves product yield.
In order to solve the above technical problems, the utility model provides a kind of wafer drying device, including mechanical arm and gas
Nozzle, the mechanical arm includes can rocking section, wherein the gas nozzle be installed on the mechanical arm can rocking section, and have
There is a heating unit, is sprayed for the gas of heat drying wafer, and by the gas after heating towards wafer to be dried;Institute
State mechanical arm can rocking section drive the gas nozzle to swing relative to wafer to be dried.
Optionally, the mechanical arm further includes support arm, to be dried for the wafer drying device to be fixedly installed to
Wafer at;It is described can rocking section be installed on the support arm, supported by the support arm.
Optionally, it is described can rocking section include a rotation motor, the rotation motor for drive it is described can rocking section, make
It is described can rocking section can be waved relative to the support arm.
Optionally, the gas nozzle further includes temperature sensing portion and temperature detect switch (TDS) portion, wherein the temperature sensing portion is pacified
It is attached to the heating unit, for measuring the temperature for the gas that heating unit is heated;The temperature detect switch (TDS) portion is connected to described
The temperature of temperature sensing portion and the heating unit, the gas for being measured according to the temperature sensing portion controls the heating
The switch of unit.
Optionally, the heating unit includes cavity and heater strip, and the heater strip is set in the cavity, the chamber
Body includes air inlet and air outlet, and the air inlet is for being passed through gas to be heated, after the gas outlet is for spraying heating
Gas.
Optionally, the temperature sensing portion is set in the cavity, is carried out for the temperature to gas in the cavity
Measurement.
Optionally, the gas nozzle further includes temperature detect switch (TDS) valve, is set to the gas outlet of the cavity, with the temperature
Detecting means are connected, after the temperature control heating for the gas that the temperature detect switch (TDS) valve is used to be measured according to the temperature sensing portion
Gas ejection.
Optionally, the number of the gas nozzle is two or more.
Optionally, what the gas nozzle was set in qually spaced in the mechanical arm can be in rocking section.
Optionally, the gas includes nitrogen.
Mechanical arm gas nozzle can be arranged in rocking section in above-mentioned wafer drying device, shake the gas nozzle can
The gas after heating is sprayed towards wafer to be dried when pendulum, the high-temperature gas after making heating comes into full contact with wafer to be dried,
By the water stain drying of crystal column surface to be dried, to eliminate water stain residual, reduce remaining water stain to subsequent technique process
Influence, improve product yield.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of wafer drying device in a specific embodiment of the utility model.
Fig. 2 is that the mechanical arm of wafer drying device in a specific embodiment of the utility model waves schematic diagram.
Fig. 3 is the structural schematic diagram of gas nozzle in a specific embodiment of the utility model.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to the utility model proposes a kind of wafer drying device it is further detailed
It describes in detail bright.According to following explanation and claims, will be become apparent from feature the advantages of the utility model.
Please refer to the structural schematic diagram that Fig. 1 is wafer drying device described in present embodiment, the drying wafer dress
It sets including mechanical arm 100 and gas nozzle 104.The mechanical arm 100 include can rocking section 101 and support arm 102, and can wave
Portion drives the gas nozzle to swing relative to wafer to be dried.The gas nozzle 104 includes heating unit 105, is used for
The gas of heat drying wafer, and the gas after heating is sprayed towards wafer to be dried.
It is described can rocking section 101 is swingable is installed to the support arm 102, the support arm 102 is used for the crystalline substance
Circle drying device is fixedly installed at wafer to be dried, and support arm 102 is fixed relative to wafer position.When it is described can rocking section
101 relative to the support arm 102 when waving, and the gas nozzle 104 is waved also relative to support arm 102, from
And it is waved relative to wafer.
When by it is described can rocking section 101 be installed to support arm 102 when, the wafer drying device can be directly mounted at ground
On, there is certain difference in height between wafer to be dried.In other specific embodiments, it is described can rocking section 101 also
It can be mounted directly to by mounting seat at wafer to be dried.At this point, due to mounting seat limited height, the drying wafer
Device should be installed on the metope by the wafer to be dried, make it is described can rocking section 101 and setting arrive described in can shake
There is certain difference in height between gas nozzle 104 and wafer to be dried in pendulum portion 101, so that gas nozzle 104 be made to spray
Heating after gas can be come into full contact with wafer to be dried.
With continued reference to Fig. 1, it is described can rocking section 101 support arm 102 is installed to by rotation motor 106, and in rotation horse
It is waved under up to 106 driving relative to the support arm 102.The gas nozzle 104 follow it is described can rocking section 101
Carry out left and right it is reciprocal when waving, the gas after heating is sprayed towards wafer to be dried, to realize to wafer to be dried
Drying process.Gas after the heating sprayed under swinging condition towards wafer to be dried due to gas nozzle 104 can be with
The surface of wafer 103 to be dried completely attaches to, therefore the water on the surface of wafer to be dried can be completely removed.
Please refer to the mechanical arm that Fig. 2 is wafer drying device described in present embodiment waves schematic diagram, it is described can
Rocking section 201 is swung left and right around support arm 204, the wafer 203 and the wiggly gas that can be arranged in rocking section 201
Gas after the heating that body nozzle 202 is blown out completely attaches to, and the gas after the water on 203 surface of wafer is heated is taken away, and realizes dry
It is dry.
With continued reference to Fig. 1, in a specific embodiment, the wafer drying device is arranged in ozone clean machine to crystalline substance
In the producing line that circle is cleaned.After ozone clean machine is to wafer water spray, cleaning, wafer to be dried is by high-speed motor
It follows Plane of rotation 103 to rotate on the Plane of rotation 103 of driving, the droplet centrifugation on wafer is thrown away.The mechanical arm 100
Can rocking section 101 be parallel to Plane of rotation 103 setting, have certain difference in height between Plane of rotation 103.The gas spray
Towards Plane of rotation 103, gas after guaranteeing heating sprays mouth 104 towards the wafer being arranged on Plane of rotation 103, to wafer into
Row is thoroughly dry.It is described can rocking section 101 when being waved relative to support arm 102, gas nozzle 104, which also follows, to wave.
In other specific embodiments, other, which can also be arranged in, in the wafer drying device needs to carry out wafer
It is not limitation with above-mentioned ozone clean machine in the producing line of water spray.
In another embodiment specific implementation mode, can by adjusting it is described can folder between rocking section 101 and support arm 102
Angle makes that an acute angle can be presented between rocking section 101 and Plane of rotation 103, adjusts the direction still court of the gas nozzle 104 at this time
To the Plane of rotation 103, the gas after the heating for spraying the gas nozzle 102 still is able to abundant and wafer to be dried
Contact.
With continued reference to Fig. 1, the number of the gas nozzle 104 is four, and equidistant be set to can 101 direction of rocking section
The side of Plane of rotation 103.In a specific embodiment, the number of the gas nozzle 104 is advisable with two to eight.
When comprising multiple gas nozzles 104, the equidistant setting of multiple gas nozzles to can dangling portion 101 towards Plane of rotation
103 side, the wafer to be dried placed on Plane of rotation 103 spray the gas after heating.
In another embodiment specific implementation mode, multiple gas nozzles 104 can also being set to for non-equidistant described can wave
Portion 101 is towards the side of Plane of rotation 103.User can according to need to be arranged in can multiple gases spray in rocking section 101
Spacing between mouth 104 is adjusted.
The structural schematic diagram that Fig. 3 is gas nozzle described in present embodiment is please referred to, the gas nozzle includes adding
Hot cell 303, temperature sensing portion 304 and temperature detect switch (TDS) portion.Wherein, the heating unit 303 is used to heat gas, and
High-temperature gas after spraying heating.The temperature sensing portion 304 is installed to the heating unit 303, to gas in heating unit 303
The temperature of body measures.The temperature detect switch (TDS) portion connects the heating unit 303 and the temperature sensing portion 304, according to temperature
The temperature for the gas that degree detecting means 304 detect controls the switch state of the heating unit 303, to make the gas nozzle
The gas of ejection maintains preset temperature, and the signal that the temperature sensing portion 304 is transferred to temperature controller 301 includes thermal resistance or heat
Galvanic couple signal.
The temperature detect switch (TDS) portion includes the temperature controller 301 and contactor 302 interconnected.The temperature controller 301 is connected to
The temperature sensing portion 304 obtains the temperature that the temperature sensing portion 304 detects.The contactor 302 is connected to described add
Hot cell 303 controls the switch state of the heating unit 303.The temperature controller 301 is connected to by relay to be connect
Tentaculum 302, corresponding to the temperature for the gas in heating unit 303 that the relay is measured as the temperature sensing portion 304
Level triggers, to contactor 302 send switch level signal, to control the switch of heating unit 303.
The heating unit 303 includes cavity and heater strip 305, and heater strip 305 is set in cavity, and is arranged on cavity
There are air inlet and air outlet.When in use, gas to be heated is input to by cavity by air inlet, passes through the heating unit
303 heater strip 305 heats gas to be heated, is sprayed the high-temperature gas obtained after heating by gas outlet.?
In a kind of specific embodiment, the temperature sensing portion 304 is set in the cavity of the heating unit 303, to heating unit
Gas temperature in 303 cavitys measures.
The gas outlet of the heating unit 303 is additionally provided with temperature detect switch (TDS) valve, is connected with the temperature sensing portion 304,
And switched according to the nitrogen temperature that the temperature sensing portion 304 measures, thus after controlling the ejection of heating unit 303 heating
Gas.In a specific embodiment, when the nitrogen temperature of the temperature sensing portion 304 measurement reaches preset temperature,
Corresponding level is transmitted to the temperature detect switch (TDS) valve, the temperature detect switch (TDS) valve is driven by the correspondence level of preset temperature, opened
It closes.
In a specific embodiment, the gas outlet of the heating unit 303 is arranged towards the wafer to be dried,
It sprays high temperature nitrogen towards wafer to be dried, removes the water of crystal column surface to be dried.
In a specific embodiment, the gas includes nitrogen, in the actual working process, can also be as needed
Select other stabilizing gas, such as helium.
Mechanical arm gas nozzle can be arranged in rocking section in above-mentioned wafer drying device, shake the gas nozzle can
The gas after heating is sprayed towards wafer to be dried when pendulum, the high-temperature gas after making heating comes into full contact with wafer to be dried,
By the water stain drying of crystal column surface to be dried, to eliminate water stain residual, reduce remaining water stain to subsequent technique process
Influence, improve product yield.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
Art personnel can also make several improvements and modifications without departing from the principle of this utility model, these improvements and modifications
Also it should be regarded as the protection scope of the utility model.
Claims (10)
1. a kind of wafer drying device, which is characterized in that including mechanical arm and gas nozzle, the mechanical arm includes that can wave
Portion, wherein
The gas nozzle be installed on the mechanical arm can rocking section, and have a heating unit, be used for heat drying wafer
Gas, and the gas after heating is sprayed towards wafer to be dried;
The mechanical arm can rocking section drive the gas nozzle to swing relative to wafer to be dried.
2. wafer drying device according to claim 1, which is characterized in that the mechanical arm further includes support arm, and being used for will
The wafer drying device is fixedly installed at wafer to be dried;It is described can rocking section be installed on the support arm, by described
Support arm support.
3. wafer drying device according to claim 2, which is characterized in that it is described can rocking section include a rotation motor, institute
State rotation motor for drive it is described can rocking section, make it is described can rocking section can be waved relative to the support arm.
4. wafer drying device according to claim 1, which is characterized in that the gas nozzle further include temperature sensing portion and
Temperature detect switch (TDS) portion, wherein
The temperature sensing portion is installed to the heating unit, for measuring the temperature for the gas that heating unit is heated;
The temperature detect switch (TDS) portion is connected to the temperature sensing portion and the heating unit, for being surveyed according to the temperature sensing portion
The temperature for the gas measured controls the switch of the heating unit.
5. wafer drying device according to claim 4, which is characterized in that the heating unit includes cavity and heater strip,
The heater strip is set in the cavity, and the cavity includes air inlet and air outlet, and the air inlet is to be added for being passed through
The gas of heat, the gas outlet are used to spray the gas after heating.
6. wafer drying device according to claim 5, which is characterized in that the temperature sensing portion is set to the cavity
In, it is measured for the temperature to gas in the cavity.
7. wafer drying device according to claim 5, which is characterized in that the gas nozzle further includes temperature detect switch (TDS) valve,
It is set to the gas outlet of the cavity, is connected with the temperature sensing portion, the temperature detect switch (TDS) valve is used for according to the temperature
The ejection of gas after the temperature control heating for the gas that detecting means measure.
8. wafer drying device according to claim 1, which is characterized in that the number of the gas nozzle is two or more.
9. wafer drying device according to claim 8, which is characterized in that the gas nozzle is set in qually spaced in the machine
Tool arm can be in rocking section.
10. wafer drying device according to claim 1, which is characterized in that the gas includes nitrogen.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201821242988.2U CN208674073U (en) | 2018-08-02 | 2018-08-02 | Wafer drying device |
Applications Claiming Priority (1)
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CN201821242988.2U CN208674073U (en) | 2018-08-02 | 2018-08-02 | Wafer drying device |
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Publication Number | Publication Date |
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CN208674073U true CN208674073U (en) | 2019-03-29 |
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CN201821242988.2U Active CN208674073U (en) | 2018-08-02 | 2018-08-02 | Wafer drying device |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110849127A (en) * | 2019-11-11 | 2020-02-28 | 兰泽(荆门)智能科技有限公司 | Rotary pulling-up wafer drying method |
CN112992656A (en) * | 2021-02-09 | 2021-06-18 | 江苏亚电科技有限公司 | Semiconductor wafer cleaning and drying method |
CN113063272A (en) * | 2021-04-14 | 2021-07-02 | 创微微电子(常州)有限公司 | Wafer drying groove, wafer drying method and wafer drying device |
-
2018
- 2018-08-02 CN CN201821242988.2U patent/CN208674073U/en active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110849127A (en) * | 2019-11-11 | 2020-02-28 | 兰泽(荆门)智能科技有限公司 | Rotary pulling-up wafer drying method |
CN112992656A (en) * | 2021-02-09 | 2021-06-18 | 江苏亚电科技有限公司 | Semiconductor wafer cleaning and drying method |
CN112992656B (en) * | 2021-02-09 | 2022-01-25 | 江苏亚电科技有限公司 | Semiconductor wafer cleaning and drying method |
CN113063272A (en) * | 2021-04-14 | 2021-07-02 | 创微微电子(常州)有限公司 | Wafer drying groove, wafer drying method and wafer drying device |
CN113063272B (en) * | 2021-04-14 | 2023-11-17 | 创微微电子(常州)有限公司 | Wafer drying groove, wafer drying method and wafer drying device |
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