CN208667903U

CN208667903U - Disk is matched in a kind of nitrogen control for pulling single crystal silicon process

Info

Publication number: CN208667903U
Application number: CN201820525895.4U
Authority: CN
Inventors: 田野; 高润飞; 郝勇; 张全顺; 裘孝顺; 刘伟; 张文霞; 武志军
Original assignee: Inner Mongolia Zhonghuan Solar Material Co Ltd
Current assignee: Inner Mongolia Zhonghuan Solar Material Co Ltd
Priority date: 2018-04-13
Filing date: 2018-04-13
Publication date: 2019-03-29
Anticipated expiration: 2028-04-13

Abstract

The utility model provides a kind of nitrogen control for pulling single crystal silicon process with disk, comprising: nitrogen feed path, including mass flow controller, for controlling the flow for being passed through nitrogen；Argon gas feed channel, for being passed through argon gas；Always match channel, it is connected to the nitrogen feed path and the argon gas feed channel, nitrogen is passed through and the flow for being passed through argon gas is matched according to described, by the gas pass-out after proportion, and provide a kind of method for matching disk for the nitrogen control of pulling single crystal silicon process, the utility model has the beneficial effects that can arbitrarily adjust the flow proportional of nitrogen, argon gas by technological parameter, realize the steady switching of nitrogen, argon gas, unexpected generation is prevented by the effect of solenoid valve, increases the safety of nitrogen crystal pulling.

Description

Disk is matched in a kind of nitrogen control for pulling single crystal silicon process

Technical field

The utility model belongs to monocrystalline silicon production technical field, more particularly, to one kind for matching during pulling single crystal silicon It closes argon gas and carries out the nitrogen control of crystal pulling jointly with disk.

Background technique

In the prior art, during silicon single crystal crystal pulling production, using high-purity argon gas as protection gas, cause to be produced into Originally it is continuously increased, therefore, reduces production cost by being passed through the gaseous mixture of argon gas and nitrogen, but the ratio of argon gas and nitrogen Control is difficult in the actual production process, increases production burden.

Therefore, it is necessary to a kind of nitrogen, and this production problem is completed with disk, and existing nitrogen is some from the beginning to arrive mostly with disk Tail matches disk using what nitrogen carried out crystal pulling, designs with argon gas with disk is similar or what nitrogen argon gas toggled matches Disk, same time can only use a kind of gas to carry out crystal pulling, not be able to satisfy the production requirement that nitrogen argon gas precisely switches, there are nitrogen The problem of gas argon gas controls inaccurately during switching, influences the quality of production of monocrystalline silicon.

Summary of the invention

The purpose of this utility model is the problems in background technique to be solved, and is provided a kind of for during pulling single crystal silicon Cooperation argon gas carries out the nitrogen control of crystal pulling with disk and method jointly.

In order to solve the above technical problems, the technical solution adopted in the utility model is: one kind being used for pulling single crystal silicon process Nitrogen control match disk, comprising:

Nitrogen feed path, including mass flow controller, for controlling the flow for being passed through nitrogen；

Argon gas feed channel, for being passed through argon gas；

Always match channel, is connected to the nitrogen feed path and the argon gas feed channel, is passed through nitrogen according to described It is matched with the flow for being passed through argon gas, by the gas pass-out after proportion.

Preferably, the nitrogen feed path includes the first nitrogen feed path and the second nitrogen feed path, and described the Two nitrogen feed paths include the mass flow controller, and the first nitrogen feed path and second nitrogen supply are logical Road is always connected to channel with described.

Preferably, the nitrogen feed path further includes third nitrogen feed path, and the third nitrogen feed path is used In connection Nitrogen source gases, the third nitrogen feed path is supplied with the first nitrogen feed path and second nitrogen respectively It is connected to channel.

Preferably, the first nitrogen inlet, pressure sensor, the first electromagnetism are successively arranged on the first nitrogen feed path Valve and the first nitrogen outlet, first nitrogen outlet are connected to total with feeder connection.

Preferably, the second nitrogen inlet, nitrogen flow control handle, matter are successively arranged on the second nitrogen feed path Amount flow controller, second solenoid valve and the second nitrogen outlet, the nitrogen flow control handle are connect with nitrogen stream scale, institute The second nitrogen outlet is stated to be connected to total with feeder connection.

Preferably, the third nitrogen feed path includes third nitrogen inlet and third nitrogen outlet, the third nitrogen Gas entrance connects the Nitrogen source gases, and the third nitrogen outlet and first nitrogen inlet and second nitrogen inlet are equal Connection.

The utility model has the advantages and positive effects of, due to the adoption of the above technical scheme:

1. the fast charge of program arbitrary switch nitrogen can be controlled according to panel, it can also arbitrarily be repaired by controlling program Change nitrogen flow, it is simple and convenient.

2. can arbitrarily adjust the flow proportional of nitrogen, argon gas by technological parameter, realize that nitrogen, the steady of argon gas are cut It changes.

3. can be opened when nitrogen pressure deficiency by adjusting nitrogen flow control handle to increase nitrogen inlet Degree, makes nitrogen flow reach demand.

4. when fast charge, if nitrogen pressure is exceeded, the pressure sensor before solenoid valve understands automatic alarm, unexpected hair is prevented It is raw, increase the safety of nitrogen crystal pulling.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of an embodiment of the present invention；

Fig. 2 is the control method flow chart of an embodiment of the present invention.

In figure:

1, the first nitrogen feed path 2, the second nitrogen feed path 3, third nitrogen feed path

4, argon gas feed channel 5, always match channel 11, the first nitrogen inlet

12, pressure sensor 13, the first solenoid valve 14, the first nitrogen outlet

21, the second nitrogen inlet 22, nitrogen flow control handle 23, mass flow controller

24, second solenoid valve 25, the second nitrogen outlet 26, nitrogen stream scale

Specific embodiment

As shown in Figure 1, this example provides a kind of nitrogen control for pulling single crystal silicon process with disk, make merely original Argon gas is used, with disk, to realize crystal pulling process nitrogen switch controllably as increase nitrogen on the basis of protection gas, nitrogen flow is controllable, Nitrogen control for pulling single crystal silicon process includes the first nitrogen feed path 1, the second nitrogen feed path 2, argon gas with disk Feed path 4 matches channel 5 with total, and the first nitrogen feed path 1, the second nitrogen feed path 2 and argon gas feed channel 4 pass through Four-way pipe is connected to total with channel, and one of channel of four-way pipe is passed through inside monocrystalline silicon draw machines body, the gas pair being passed through Pulled crystal silicon is protected.

Wherein, the first nitrogen inlet 11, pressure sensor 12, the first electromagnetism are successively arranged on the first nitrogen feed path 1 Valve 13 and the first nitrogen outlet 14, the first nitrogen outlet 14 are connected to a total entrance with channel 5, in the course of work, first Judge whether the default intake of nitrogen is less than total default total flux for matching channel 5；If it is not, then passing through the first nitrogen feed path 1 directly to always nitrogen is passed through with channel 5, carries out fast charge, when fast charge, if nitrogen pressure is exceeded, and the pressure of 13 front of the first solenoid valve The meeting automatic alarm of force snesor 12, prevents unexpected generation, increases the safety of nitrogen crystal pulling, is gas by setting solenoid valve 13 The switch of body on-off is accurately controlled the intake of gas, guarantees the reliability of crystal pulling process.

The second nitrogen inlet 21, nitrogen flow control handle 22, mass flow are successively arranged on second nitrogen feed path 2 Controller 23, second solenoid valve 24 and the second nitrogen outlet 25, nitrogen flow control handle 22 are connect with nitrogen stream scale 26, when When nitrogen pressure deficiency, nitrogen inlet aperture can be increased by adjusting nitrogen flow control handle, make nitrogen stream Amount reaches demand, and the second nitrogen outlet 25 is connected to a total entrance with channel 5, when the instruction maximum value of nitrogen stream scale 26, When nitrogen pressure is excessive, it may cause the display of second solenoid valve 24 and opened, but 23 control panel of mass flow controller is shown Flow value is zero, can adjust nitrogen pressure to OK range, mass flow by adjusting nitrogen flow control handle 22 at this time Meter restores normal, controllable by mass flow controller 23 by the mass flow controller 23 on the second feed path of setting Nitrogen flow processed is in crystal pulling range of needs, for controlling the flow for being passed through nitrogen.

Nitrogen feed path further includes third nitrogen feed path 3, and third nitrogen feed path 3 includes third nitrogen inlet 31 are used to be connected to Nitrogen source gases, third nitrogen with third nitrogen outlet 32, the third nitrogen inlet 31 of third nitrogen feed path 3 Entrance 31 connects external liquid nitrogen high pressure gas holder, and nitrogen enters the raising after pipeline due to temperature, is converted into gaseous state, volume by liquid Expansion, pressure rise can be screwed by nitrogen flow control handle 22 to adjust inlet pressure, nitrogen stream scale 26 is shown Nitrogen real-time pressure value.The third nitrogen outlet 32 of third nitrogen feed path 3 respectively with the first nitrogen feed path 1 first Nitrogen inlet 11 is connected to 2 second nitrogen inlet 21 of the second nitrogen feed path.

Argon gas feed channel 4 can arbitrarily adjust the flow-rate ratio of nitrogen, argon gas for being passed through argon gas by technological parameter Example realizes the steady switching of nitrogen, argon gas.

Always match channel 5, according to the default total flux that actual production needs to be arranged, is always supplied with channel 5 and the first nitrogen Channel 1, the second nitrogen feed path 2 are connected to argon gas feed channel 4, are carried out according to nitrogen is passed through with the flow for being passed through argon gas Gas pass-out after proportion can be controlled whether program arbitrary switch nitrogen passes through the supply of the first nitrogen by proportion according to panel Channel 1 carries out fast charge, can also arbitrarily modify nitrogen flow by controlling program, simple and convenient, when fast charge, if nitrogen pressure is super Mark, the meeting automatic alarm of pressure sensor 12 of 13 front of the first solenoid valve, prevents unexpected generation, increases the safety of nitrogen crystal pulling Property, it is the switch of gas on-off by setting solenoid valve, is accurately controlled the intake of gas, guarantees the reliable of crystal pulling process Property.

Match disk by nitrogen control, during realizing pulling single crystal silicon, nitrogen is gently switched over argon gas, that is, is being subtracted While few argon gas, increase nitrogen flow, until argon flow is kept to zero, nitrogen flow is added to technique initialization；Matter is used simultaneously Flow controller is measured, guarantees that the sum of nitrogen flow and argon flow are no more than technique initialization, so that control of the disk to flow should be matched It is more accurate, accurately.

A kind of nitrogen control method for pulling single crystal silicon process matches disk using above-mentioned nitrogen control, always matches channel 5 Equipped with default total flux, include the following steps:

S1: the default intake of the nitrogen at current time is determined；

S2: according to the default intake of nitrogen, adjusting the mass flow controller 23 of the second nitrogen feed path 2, so that Nitrogen is suitable with default intake to total nitrogen intake being passed through with channel 5；

S3: judge whether the default intake of nitrogen is less than total default total flux for matching channel 5；

If so, by the second argon gas feed channel 2 to being always passed through argon gas with channel 5, using argon gas by default total flux Difference between the default intake of nitrogen carries out proportion polishing；

If it is not, being then passed through nitrogen with channel 5 to total by the first nitrogen feed path 1.

S4: by always matching channel, the gas being passed through is exported according to default total flux.

The beneficial effects of the utility model are:

One embodiment of the utility model is described in detail above, but the content is only the utility model Preferred embodiment should not be considered as limiting the scope of the present invention.It is all to be made according to application scope of the utility model All the changes and improvements etc., should still belong within the patent covering scope of the utility model.

Claims

1. disk is matched in a kind of nitrogen control for pulling single crystal silicon process characterized by comprising

Argon gas feed channel, for being passed through argon gas；

Always match channel, is connected to the nitrogen feed path and the argon gas feed channel, is passed through nitrogen and institute according to described It states and is passed through the flow of argon gas and is matched, by the gas pass-out after proportion.

2. disk is matched in the nitrogen control according to claim 1 for pulling single crystal silicon process, it is characterised in that: the nitrogen Feed path includes the first nitrogen feed path and the second nitrogen feed path, and the second nitrogen feed path includes the matter Flow controller is measured, the first nitrogen feed path and the second nitrogen feed path are always connected to channel with described.

3. disk is matched in the nitrogen control according to claim 2 for pulling single crystal silicon process, it is characterised in that: the nitrogen Feed path further includes third nitrogen feed path, and the third nitrogen feed path is for being connected to Nitrogen source gases, the third Nitrogen feed path is connected to the first nitrogen feed path and the second nitrogen feed path respectively.

4. disk is matched in the nitrogen control according to claim 2 or 3 for pulling single crystal silicon process, it is characterised in that: described The first nitrogen inlet, pressure sensor, the first solenoid valve and the first nitrogen outlet, institute are successively arranged on first nitrogen feed path The first nitrogen outlet is stated to be connected to total with feeder connection.

5. disk is matched in the nitrogen control according to claim 4 for pulling single crystal silicon process, it is characterised in that: described second The second nitrogen inlet, nitrogen flow control handle, mass flow controller, second solenoid valve are successively arranged on nitrogen feed path With the second nitrogen outlet, the nitrogen flow control handle is connect with nitrogen stream scale, and second nitrogen outlet is with total with logical The connection of road entrance.

6. disk is matched in the nitrogen control according to claim 3 for pulling single crystal silicon process, it is characterised in that: the third Nitrogen feed path includes third nitrogen inlet and third nitrogen outlet, and the third nitrogen inlet connects the Nitrogen source gases, The third nitrogen outlet is connected to first nitrogen inlet and second nitrogen inlet.