CN208649505U - A kind of arsenide gallium monocrystal production equipment - Google Patents
A kind of arsenide gallium monocrystal production equipment Download PDFInfo
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- CN208649505U CN208649505U CN201821051365.7U CN201821051365U CN208649505U CN 208649505 U CN208649505 U CN 208649505U CN 201821051365 U CN201821051365 U CN 201821051365U CN 208649505 U CN208649505 U CN 208649505U
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Abstract
The utility model relates to single crystal preparation technical fields, and in particular to a kind of arsenide gallium monocrystal production equipment.Arsenide gallium monocrystal production equipment crucible provided by the utility model, quartz ampoule and growth furnace, the growth chamber of rectangular-shape is formed in the crucible, synthetic gallium arsenide polycrystal material and seed crystal etc. are fitted into crucible and are sealed in the quartz ampoule vacuumized, the quartz ampoule for installing polycrystal material is vertically put into vertical multi-temperature zone crystal growing furnace, the temperature increasing for melting materials in growth furnace, temperature is kept, connect seed crystal, isodiametric growth, the processes such as cooling, monocrystalline is slowly grown up since seed crystal end, form the arsenide gallium monocrystal, since the growth chamber formed in crucible is rectangular-shape, therefore the gallium arsenide to grow out is rectangular-shape, it does not need to handle using circular single crystal GaAs trimming, avoid the waste of raw material, raw material and human cost can be saved, the process for reducing crystal pro cessing, reduce process time, improve production Efficiency.
Description
Technical field
The utility model relates to single crystal preparation technical fields, and in particular to a kind of arsenide gallium monocrystal production equipment.
Background technique
Vertical gradient solidification (VGF) growth high quality gallium arsenide is the method for current mainstream, and process flow is big
It causes are as follows: synthetic gallium arsenide polycrystal material and seed crystal etc. are fitted into crucible and are sealed in the quartz ampoule vacuumized, will be installed
The quartz ampoule of polycrystal material is vertically put into vertical multi-temperature zone crystal growing furnace, and crystal growing furnace is divided into independent heating from the bottom up
Several warm areas.Thermal field is accurately controlled by computer in growth course, carries out temperature increasing for melting materials, and temperature keeps, connects seed crystal, isometrical life
Processes, the growth interfaces such as long, cooling are gradually moved up by lower end, and under certain temperature gradient, monocrystalline is since seed crystal end
Slowly grow up.The gallium arsenide that VGF crystal growth technique is grown at present is circle, solar energy gallium arsenide wafer
To be rectangular, rectangular gallium arsenide wafer is such as needed, needs as required to obtain large scale disk after size cuts off four sides, cause
Raw material largely waste.
Utility model content
It (one), can only the technical problem to be solved by the utility model is to existing VGF grows the equipment of gallium arsenide
Circular gallium arsenide is enough produced, rectangular gallium arsenide wafer is such as needed, needs that size is cut as required by large scale disk
Except four sides obtain later, waste of material is serious.
(2) technical solution
In order to solve the above-mentioned technical problem, the utility model provides a kind of arsenide gallium monocrystal production equipment, including crucible,
Quartz ampoule and growth furnace, the interior growth chamber for forming rectangular-shape of the crucible, the quartz ampoule is interior to form closed vacuum chamber
Body, the crucible are fixed in vacuum cavity, and the quartz ampoule is fixed in the growth furnace.
Arsenide gallium monocrystal production equipment crucible, quartz ampoule and growth furnace provided by the utility model, the crucible is interior to be formed
Synthetic gallium arsenide polycrystal material and seed crystal etc. are packed into crucible and are sealed in the stone vacuumized by the growth chamber of rectangular-shape
The quartz ampoule for installing polycrystal material is vertically put into vertical multi-temperature zone crystal growing furnace, the temperature increasing for melting materials in growth furnace by Ying Guanzhong,
Temperature keeps, connects the processes such as seed crystal, isodiametric growth, cooling, and growth interface is gradually moved up by lower end, in certain temperature ladder
Under degree, monocrystalline is slowly grown up since seed crystal end, forms the arsenide gallium monocrystal, simultaneously because the growth formed in crucible
Cavity is rectangular-shape, therefore the gallium arsenide to grow out is rectangular-shape, therefore can directly use solar energy and set
It is standby, do not need using circular single crystal GaAs trimming handle, avoid the waste of raw material, can save raw material and manpower at
This, the process for reducing crystal pro cessing reduces process time, improves production efficiency.
Further, the crucible includes sequentially connected raw material section from the bottom to top, shouldering section and growth section, the raw material
Seed crystal cavity is formed in section, forms the First Transition cavity being connected to the seed crystal cavity, the growth section in the shouldering section
The interior growth chamber for forming the rectangular-shape being connected to the First Transition cavity.
Further, the seed crystal cavity is cylindrical cavity or rectangular-shape cavity.
Further, the First Transition cavity is round table-like cavity or square centrum shape cavity.
Further, the quartz ampoule includes from top to bottom sequentially connected first segment, second segment and third section, and described the
The first cavity compatible with the raw material section shape, size is formed in one section, the raw material section is located in first cavity；
The second transitional cavity compatible with the shouldering section geomery, the shouldering section card are formed in the second segment
In second transitional cavity；
The second cavity compatible with the growth section geomery is formed in the third section, the growth section is located at institute
It states in the second cavity.
Further, first cavity is cylindrical cavity or rectangular-shape cavity.
Further, second transitional cavity is round table-like cavity or square centrum shape cavity.
Further, second cavity is cylindrical cavity or rectangular-shape cavity.
Further, heating zone, the heating zone supreme first set gradually under including are formed in the growth furnace
Area, the secondth area, third area, the 4th area, the 5th area and the 6th area, firstth area, the secondth area, third area, the 4th area, the 5th area
Independent heating mechanism is equipped with the 6th area.
Further, the crucible is PBN crucible or graphite crucible.
Detailed description of the invention
The advantages of the utility model is above-mentioned and/or additional aspect will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 is the schematic diagram of arsenide gallium monocrystal production equipment described herein
Fig. 2 is the structural schematic diagram of quartz ampoule described herein；
Fig. 3 is the structural schematic diagram of crucible described herein；
Fig. 4 is the top view of crucible described herein.
The wherein corresponding relationship in Fig. 1 to Fig. 4 between appended drawing reference and component names are as follows:
1, growth furnace, the 11, first area, the 12, second area, 13, third area, the 14, the 4th area, the 15, the 5th area, the 16, the 6th area,
2, quartz ampoule, 21, first segment, the 211, first cavity, 22, second segment, the 221, second transitional cavity, 23, third section, 231, second
Cavity, 3, crucible, 31, raw material section, 311, seed crystal cavity, 32, shouldering section, 321, First Transition cavity, 33, growth section, 331,
Growth chamber.
Specific embodiment
In order to be more clearly understood that the above objects, features, and advantages of the utility model, with reference to the accompanying drawing and have
The utility model is further described in detail in body embodiment.It should be noted that in the absence of conflict, this Shen
The feature in embodiment and embodiment please can be combined with each other.
As shown in Figure 1, the application the utility model provides a kind of arsenide gallium monocrystal production equipment, including crucible 3, quartz
Pipe 2 and growth furnace 1, the interior growth chamber 331 for forming rectangular-shape of the crucible 3, the quartz ampoule 2 is interior to form closed vacuum
Cavity, the crucible 3 are fixed in vacuum cavity, and the quartz ampoule 2 is fixed in the growth furnace 1.
Arsenide gallium monocrystal production equipment crucible 3, quartz ampoule 2 and growth furnace 1 provided by the utility model, in the crucible 3
Synthetic gallium arsenide polycrystal material and seed crystal etc. are packed into crucible 3 and are sealed in pumping by the growth chamber 331 for forming rectangular-shape
In the quartz ampoule 2 of vacuum, the quartz ampoule 2 for installing polycrystal material is vertically put into vertical multi-temperature zone crystal growing furnace 1, in growth furnace
Temperature increasing for melting materials in 1, temperature keep, connect the processes such as seed crystal, isodiametric growth, cooling, and growth interface is gradually moved up by lower end,
Under certain temperature gradient, monocrystalline is slowly grown up since seed crystal end, forms the arsenide gallium monocrystal, simultaneously because crucible
The growth chamber 331 formed in 3 is rectangular-shape, therefore the gallium arsenide to grow out is rectangular-shape, therefore can be straight
It connects and uses solar energy equipment, do not need to handle using circular single crystal GaAs trimming, avoid the waste of raw material, it can
Raw material and human cost are saved, the process for reducing crystal pro cessing reduces process time, improves production efficiency.
As depicted in figs. 1 and 2, the crucible 3 includes being sequentially connected raw material section 31, shouldering section 32 and growth section from the bottom to top
33, seed crystal cavity 311 is formed in the raw material section 31, and the be connected to the seed crystal cavity 311 is formed in the shouldering section 32
One transitional cavity 321, the interior growth for forming the rectangular-shape being connected to the First Transition cavity 321 of growth section 33
Cavity 331.Wherein the growth section 33 is equal gauge structures, i.e., the growth chamber 331 is formed inside the described growth section 33 by upper
It is constant to lower size and shape, and in a rectangular parallelepiped shape (as shown in Figure 4), rectangular-shape is formed in growth section 33 described in rectangular-shape
The growth chamber 331, the arsenide gallium monocrystal of rectangular-shape (namely rectangular) can be grown in this way, needing to use in this way
When to prismatic single crystal, there is no need to carry out trimming processing to circular single crystal, human cost and cost of material can be saved, more
Environmental protection.
As depicted in figs. 1 and 2, the seed crystal cavity 311 is cylindrical cavity or rectangular-shape cavity, preferably in this Shen
Please in the upper seed crystal cavity 311 be cylindrical cavity, the raw material section 31 is cylinder-like structure at this time；Certainly, in this Shen
Please described in seed crystal cavity 311 be rectangular-shape cavity when, the raw material section 31 be square tube type structure.
As shown in Fig. 2, the First Transition cavity 321 is round table-like cavity or square centrum shape cavity, described put that is to say
Shoulder section 32 is round table-like or square centrum shape, is cooperated in this way by the shouldering section 32 in the shouldering section 32 of crucible 3 and quartz ampoule 2, will
The clamping of crucible 3 is fixed in the quartz ampoule 2.
As shown in figures 1 and 3, the quartz ampoule 2 includes from top to bottom sequentially connected first segment 21,22 and of second segment
Third section 23, the first segment 21 is interior to form the first cavity 211 compatible with 31 shape of raw material section, size, the original
Material section 31 is located in first cavity 211；It is formed in the second segment 22 compatible with 32 geomery of shouldering section
Second transitional cavity 221, the shouldering section 32 are stuck in second transitional cavity 221；Formation and institute in the third section 23
Compatible second cavity 231 of growth 33 geomery of section is stated, the growth section 33 is located in second cavity 231.
First cavity 211 is cylindrical cavity or rectangular-shape cavity, wherein when the raw material section 31 is cylindric
When, first cavity 211 is just arranged to cylindrical cavity and cooperates with the raw material section 31, wherein first cavity 211
Internal diameter be slightly larger than the raw material section 31 outer diameter；When the 31 rectangular tubular structure of raw material section, first cavity 211
For rectangular-shape cavity, the length of first cavity 211 and the wide length and width for being slightly larger than the raw material section 31 at this time.
Second transitional cavity 221 is round table-like cavity or square centrum shape cavity, wherein when the shouldering section 32 is circle
When mesa-shaped, second transitional cavity 221 is also round table-like cavity, when the shouldering section 32 is located at cone shape structure, institute
Stating the second transitional cavity 221 is cone shape cavity, can guarantee that shouldering section 32 can be stuck in second adapter cavity in this way
It is in body 221 and fixed.Wherein the second segment 22 on quartz ampoule 2 is exactly the shouldering section 32 of quartz ampoule 2.
The second cavity 231 compatible with growth 33 geomeries of section, the growth are formed in the third section 23
Section 33 is located in second cavity 231, and second cavity 231 is cylindrical cavity or rectangular-shape cavity.
As shown in Figure 1, form heating zone in the growth furnace 1, the heating zone supreme the set gradually under including
One area 11, the second area 12, third area 13, the 4th area 14, the 5th area 15 and the 6th area 16, firstth area 11, the second area 12,
Three areas 13, the 4th area 14, the 5th area 15 and the 6th area 16 are equipped with independent heating mechanism.Preferably, earthenware described herein
Crucible 3 is PBN (pyrolytic boron nitride) crucible or graphite crucible.
Wherein growth furnace 1 described herein is monocrystal growing furnace 1, and 1 furnace interior cavity shape of monocrystal growing furnace is
Cylindrical or cuboid is preferably rectangular.
Illustrate the technical process of arsenide gallium monocrystal production equipment provided by the present application production GaAs below.
Charging and sealing: gallium arsenide polycrystal, seed crystal are fitted into rectangular PBN crucible, be put into quartz ampoule vacuumize it is rear close
Temperature-measuring heat couple is arranged in the firstth area, the secondth area, third area, the 4th area, the 5th area and the 6th area's heating region respectively in envelope, in addition exists
The head and tail portion and crystal growth tail portion of the seed crystal also set temperature-measuring heat couple respectively；
Heating: 1200 DEG C ± 5 DEG C of the firstth area, 1225 DEG C ± 5 DEG C of the secondth area, third area 1235 were heated to 5 hours
Then DEG C ± 5 DEG C, 1235 DEG C ± 5 DEG C of the 4th area, 1235 DEG C ± 5 DEG C of the 5th area, 1230 DEG C ± 5 DEG C of the 6th area keep the temperature 2 hours；
It is further continued for heating to 1210 DEG C ± 5 DEG C of the firstth area, 1225 DEG C ± 5 DEG C of the secondth area, 1245 DEG C ± 5 DEG C of third area, the 4th area
1245 DEG C ± 5 DEG C, 1230 DEG C ± 5 DEG C of the 5th area, 1230 DEG C ± 5 DEG C of the 6th area, then keep the temperature 2 hours
Material: heating to 1230 DEG C ± 5 DEG C of the secondth area, 1240 DEG C ± 5 DEG C of third area, 1250 DEG C ± 5 DEG C of the 4th area,
Then 5th ± 5 DEG C of 1255 DEG C of area, the 6th ± 5 DEG C of 1255 DEG C of area keep the temperature 8 hours, carry out thawing polycrystal material；
It connects seed crystal: second area's temperature being adjusted to 1240 DEG C ± 5 DEG C, keeps the temperature 4 hours, melt seed crystal；
Shouldering: after seed crystal melts completion, continue to cool to 1200 DEG C ± 5 DEG C of the firstth area, 1215 DEG C of the secondth area in 16 hours
± 5 DEG C, 1233 DEG C ± 5 DEG C of third area, 1250 DEG C ± 5 DEG C of the 4th area, 1255 DEG C ± 5 DEG C of the 5th area, 1255 DEG C ± 5 of the 6th area
DEG C,；
Isodiametric growth: it after shouldering, cooled to by 160 hours to 800 DEG C ± 5 DEG C of the firstth area, 950 DEG C ± 5 of the secondth area
DEG C, 1050 DEG C ± 5 DEG C of third area, 1100 DEG C ± 5 DEG C of the 4th area, 1100 DEG C ± 5 DEG C of the 5th area, 1100 DEG C ± 5 DEG C of the 6th area, side
Shape gallium arsenide crystal growth is completed.
Isodiametric growth ending.Using 30 hours, the first to the 6th area's temperature is made to drop to 300 DEG C ± 5 DEG C once, closes journey
Sequence, Temperature fall.
The utility model VGF (vertical gradient solidification) arsenide gallium monocrystal grow new process and matching used quartz ampoule and
Cuboid PBN crucible can directly grow rectangular arsenide gallium monocrystal body.
In the description of the present invention, it should be noted that the orientation or positional relationship of the instructions such as term " on ", "lower"
To be based on the orientation or positional relationship shown in the drawings, it is merely for convenience of describing the present invention and simplifying the description, without referring to
Show or imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot manage
Solution is limitations of the present invention.In addition, term " first ", " second " are used for description purposes only, and should not be understood as indicating
Or imply relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " is pacified
Dress ", " connection ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection；It can be mechanical connection, be also possible to be electrically connected；Can be direct connection, can also by intermediary indirect communication,
It can be the connection inside two elements.For the ordinary skill in the art, above-mentioned art can be understood with concrete condition
The concrete meaning of language in the present invention.In addition, in the description of the present invention, unless otherwise indicated, " multiples' " contains
Justice is two or more.
The above is only the preferred embodiment of the present invention, is not intended to limit the utility model, all practical at this
Within novel spirit and principle, any modification, equivalent replacement, improvement and so on should be included in the guarantor of the utility model
Within the scope of shield.
Claims (10)
1. a kind of arsenide gallium monocrystal production equipment, it is characterised in that: including crucible, quartz ampoule and growth furnace, shape in the crucible
Growth chamber in cuboid shape, the quartz ampoule is interior to form closed vacuum cavity, and the crucible is fixed in vacuum cavity,
The quartz ampoule is fixed in the growth furnace.
2. arsenide gallium monocrystal production equipment according to claim 1, it is characterised in that: the crucible include from the bottom to top according to
The raw material section of secondary connection, shouldering section and growth section form seed crystal cavity in the raw material section, formed in the shouldering section with it is described
The First Transition cavity of seed crystal cavity connection, the rectangular-shape that the interior formation of growth section is connected to the First Transition cavity
The growth chamber.
3. arsenide gallium monocrystal production equipment according to claim 2, it is characterised in that: the seed crystal cavity is cylindric chamber
Body or rectangular-shape cavity.
4. arsenide gallium monocrystal production equipment according to claim 2, it is characterised in that: the First Transition cavity is rotary table
Shape cavity or square centrum shape cavity.
5. arsenide gallium monocrystal production equipment according to claim 2, it is characterised in that: the quartz ampoule includes from top to bottom
Sequentially connected first segment, second segment and third section, the interior formation of the first segment are compatible with the raw material section shape, size
First cavity, the raw material section are located in first cavity；
The second transitional cavity compatible with the shouldering section geomery is formed in the second segment, the shouldering section is stuck in institute
It states in the second transitional cavity；
Form the second cavity compatible with the growth section geomery in the third section, the growth section is positioned at described the
In two cavitys.
6. arsenide gallium monocrystal production equipment according to claim 5, it is characterised in that: first cavity is cylindric chamber
Body or rectangular-shape cavity.
7. arsenide gallium monocrystal production equipment according to claim 5, it is characterised in that: second transitional cavity is rotary table
Shape cavity or square centrum shape cavity.
8. arsenide gallium monocrystal production equipment according to claim 5, it is characterised in that: second cavity is cylindric chamber
Body or rectangular-shape cavity.
9. arsenide gallium monocrystal production equipment according to any one of claims 1 to 8, it is characterised in that: in the growth furnace
Form heating zone, the heating zone supreme the firstth area set gradually, the secondth area, third area, the 4th area, the 5th area under including
With the 6th area, firstth area, the secondth area, third area, the 4th area, the 5th area and the 6th area are equipped with independent heating mechanism.
10. arsenide gallium monocrystal production equipment according to claim 9, it is characterised in that: the crucible is PBN crucible or stone
Black crucible.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821051365.7U CN208649505U (en) | 2018-07-04 | 2018-07-04 | A kind of arsenide gallium monocrystal production equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821051365.7U CN208649505U (en) | 2018-07-04 | 2018-07-04 | A kind of arsenide gallium monocrystal production equipment |
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| CN208649505U true CN208649505U (en) | 2019-03-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110565168A (en) * | 2019-09-20 | 2019-12-13 | 山西中科晶电信息材料有限公司 | Furnace body temperature-adjustable cold wall single crystal furnace and gallium arsenide crystal growth method |
-
2018
- 2018-07-04 CN CN201821051365.7U patent/CN208649505U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110565168A (en) * | 2019-09-20 | 2019-12-13 | 山西中科晶电信息材料有限公司 | Furnace body temperature-adjustable cold wall single crystal furnace and gallium arsenide crystal growth method |
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