CN208580715U - Focusing scanning type photomultiplier - Google Patents
Focusing scanning type photomultiplier Download PDFInfo
- Publication number
- CN208580715U CN208580715U CN201821095091.1U CN201821095091U CN208580715U CN 208580715 U CN208580715 U CN 208580715U CN 201821095091 U CN201821095091 U CN 201821095091U CN 208580715 U CN208580715 U CN 208580715U
- Authority
- CN
- China
- Prior art keywords
- electron
- focusing
- cluster
- anode
- multiplier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000011084 recovery Methods 0.000 claims abstract description 8
- 238000010894 electron beam technology Methods 0.000 claims description 34
- 230000033001 locomotion Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000001133 acceleration Effects 0.000 claims description 5
- 239000002775 capsule Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 17
- 238000005070 sampling Methods 0.000 abstract description 3
- 239000000470 constituent Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000004044 response Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000002123 temporal effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001155 isoelectric focusing Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
In order to solve the technical problem that the actual detection precision of the laser radar is low, the utility model provides a focusing scanning type photomultiplier, through set up focusing system, scanning system and the electron multiplier cluster that is located the focus department of focusing system in photomultiplier's vacuum vessel, make different electron multiplication regions receive signal electron according to the chronogenesis and carry out multiplication and output, thereby make the same electron multiplication region have sufficient electron multiplication, electron output and performance recovery time; because the number of the constituent units of the electron multiplier cluster is tens or hundreds, when the electron multiplier cluster is effectively utilized, the sampling frequency of the photomultiplier can be increased by tens or hundreds of times on the original basis, and can be increased to tens of GHz.
Description
Technical field
The utility model relates to a kind of photoelectric detectors, have GHz sample frequency more particularly to one kind and have list
The focusing sweep type photomultiplier tube of photon detection ability.
Background technique
Photomultiplier tube (abbreviation PMT), is a kind of electrovacuum photoelectric detector, and major function is to believe faint optics
Number electric signal is converted to, and output is amplified to electric signal, to realize the function to target acquisition.Photomultiplier tube has
The features such as detecting light spectrum range is wide, dynamic range is big, electron gain is high, dark noise is low and fast response time, is widely used
In every field such as medical treatment, detection, scientific researches.
One important applied field of photomultiplier tube is exactly laser radar, at present airborne laser range radar, carrier-borne water
Lower detecting laser radar and Atmospheric sounding in upper air laser radar etc. are all using photomultiplier tube as core sensitive detection parts.Due to swashing
Optical radar has the advantages that high resolution, good concealment, active jamming rejection ability strong, accurate positioning, so that laser radar can be with
The precisely parameters such as position, motion morphology and posture of detection target, so in environmental science and field of biology etc.
It has a wide range of applications.
In recent years, with the development of modern science and technology, more stringent requirements are proposed to laser radar performance, for example have preferable
Anti-interference ability, wide detecting light spectrum frequency range and compared with high s/n ratio etc., especially raising detection accuracy and spatial resolution.It wants
Realize laser radar performance boost, other than improving and optimizing the optical system of laser radar, core devices use performance more
High photodetector (such as photomultiplier tube) is also another more effective approach of improving laser radar performance.
Photomultiplier tube is incident to device input since it needs to realize electron multiplication and output function, from optical signal
It is effectively exported at face to electrical signal and needs to undergo one section of response time, the length of this response time determines photomultiplier tube
Time response, to influence the detection accuracy of laser radar.The response time of dynode photomultiplier tube reaches more than ten at present
A nanosecond, the response time highest of MicroChannel plate multiplier tube can achieve 300Ps or so, and semiconductor optoelectronic multiplier tube its
The highest response time is also nanosecond, in this photomultiplier tube performance parameter, the theoretical detection of laser radar
Precision only up to reach 9cm.In view of factors such as electron multiplication device self performance recovery time and signal time characteristics
Limitation, the actual detection precision of laser radar is lower, essentially the rice order of magnitude.
Utility model content
To solve the low technical problem of laser radar actual detection precision, the utility model provides a kind of focusing sweep type
Photomultiplier tube.
The technical solution of the utility model is:
A kind of focusing sweep type photomultiplier tube, including vacuum tank, optics input window, photocathode, electronics accelerate electricity
Pole, anode and for the current electrode to photocathode and anode supply；It is characterized in that
It further include focusing system, the scanning system, electron multiplier cluster being successively set in the middle part of the vacuum tank, with
And the multiplier tube for powering to the focusing system, scanning system, electron multiplier cluster accelerates and focus supply electrode, sweeps
System power supply electrode, electron multiplier cluster current electrode are retouched, and is used to support fixed-focus system, scanning system, electronics times
Increase the support column of device cluster；
The focusing system accelerates electrode setting close to the electronics, for converging electronics, so that Electron Beam
Diameter is less than the 1/5 of the electron multiplication device input face size for constituting the electron multiplier cluster；The transition time of focusing system
Disperse is less than 100ps；
The scanning system for changing electron beam after focusing the direction of motion so that focusing system outgoing electron beam fortune
It moves to specified electron multiplication region；
The electron multiplier cluster is arranged at the focal plane of focusing system, the electron beam for collectiong focusing system exit
And generate multiplied electron；The time interval of same the received electron beam in electron multiplication region should be device recovery time 50~
100 times；
The multiplied electron beam that the electron multiplier cluster generates is collected by the anode；
Contact conductor and metal wire are reserved on the vacuum tank；
The multiplier tube accelerates and focus supply electrode, scanning system current electrode, electron multiplier cluster current electrode
It is connected by the contact conductor with the power supply of device exterior；
The anode for collecting multiplied electron beam caused by electron multiplier cluster, the signal output lead of anode with
Multiple signals read-out system is connected；
The focusing system, scanning system, electron multiplier cluster, the center of anode are coaxial.
Further, the electron multiplier cluster is beaten by tradition takes grade electron multiplication component to form, or using micro- logical
Guidance tape electron multiplication component composition, or be made of semiconductor electron multiplier part.
Further, the optics input window is planar structure or curved-surface structure.
Further, high frequency sealing-in between the optics input window and vacuum tank, high temperature heat seal connects or indium envelope sealing-in.
Further, it is reticular structure, cylindrical structure or spherical structure that the electronics, which accelerates electrode,.
Further, the focusing system is that electrofocusing's system, magnetic focusing system or electromagnetism mix focusing system.
Further, the scanning system is electric scanning system, magnetic scanning system or electromagnetism mixed sweep system.
Further, the optics input window is made of glass or crystal.
Further, the optics input window uses silica glass material, magnesium fluoride material or borosilicate glass material
Material is made.
Further, the anode include insulating substrate, multiple anode electrode units for being arranged on insulating substrate；It is multiple
Anode electrode unit is uniformly arranged in the capsule shape being made of two semi-circular segments and two straightways；Wherein, it is located on straightway
Anode electrode unit cross sectional shape be rectangle, the length is 10mm, width 2mm；Anode electrode list in semi-circular segments
Member cross sectional shape be it is trapezoidal, the length is 10mm；The spacing distance of two neighboring anode electrode unit is 0.1~0.5mm；It cuts
Face is trapezoidal anode electrode unit, is parallel to the midline length of bottom equal to the anode electrode unit that section is rectangle
Width；Spacing of the two neighboring section between trapezoidal anode electrode unit is identical；All sections are trapezoidal anode electrode
Unit, the midpoint for being parallel to trapezoidal upper bottom middle line are located at same circular arc.
Compared with prior art, the utility model has the following beneficial effects:
By the way that focusing system, scanning system are arranged in the vacuum tank of photomultiplier tube and positioned at the coke of focusing system
Electron multiplier cluster at point, makes different electron multiplication regions chronologically receive signal electron and is doubled and exported, thus
So that there are enough electron multiplications, electronics output and performance recovery time in same electron multiplication region；Due to electron multiplier
The component units number of cluster is dozens of or up to a hundred, therefore when electron multiplier cluster is used effectively, photoelectricity times
The sample frequency for increasing pipe can promote decades of times or hundreds of times on the original basis, and highest can be promoted to the number of tens of GHz
Magnitude.
Detailed description of the invention
Fig. 1 is the schematic illustration that the utility model focuses sweep type photomultiplier tube.
Fig. 2 is a kind of structural schematic diagram for embodiment that the utility model focuses sweep type photomultiplier tube.
When Fig. 3 is that embodiment illustrated in fig. 2 uses electrostatic focusing system, the motion profile figure of emission of cathode electronics.
Fig. 4 is the distribution map of four pieces of plate electrodes in embodiment illustrated in fig. 2 scanning system.
Fig. 5 is after embodiment illustrated in fig. 2 uses electrostatic focusing system and electrostatic deflection, at dynode input face
Beam spot statistical chart.
Fig. 6 is after embodiment illustrated in fig. 2 uses electrostatic focusing system and electrostatic deflection, at dynode input face
Electron beam transition time statistical chart.
Fig. 7 is after embodiment illustrated in fig. 2 uses electrostatic focusing system and electrostatic deflection, at dynode input face
Beam energy statistical chart.
Fig. 8 applies scanning circuit waveform diagram to plate by embodiment illustrated in fig. 2 scanning system two.
When Fig. 9 is that embodiment illustrated in fig. 2 scanning system applies scanning voltage shown in Fig. 8, electron trajectory figure at anode.
Figure 10 is that embodiment illustrated in fig. 2 carries out waveform obtained by inverting through anode output signal and waveform input signal compares
Figure.
Description of symbols:
1- vacuum tank, 2- optics input window, 3- electronics accelerate electrode, the first focusing electrode of 41-, and 42- second focuses electricity
Pole, 43- tertiary focusing electrode, 5- scanning system, 51,52,53,54- plate electrode, 6- electron multiplier cluster, 7- anode,
71- insulating substrate, 72- anode electrode unit, 73- beam motion track, 81- first electrode lead, 82- second electrode are drawn
Line, 9- multiplier tube accelerates and the contact conductor of focus supply electrode, the contact conductor of 10- electron multiplier cluster current electrode.
Specific embodiment
Below in conjunction with attached drawing 1-10, elaborate to the utility model.
Focusing sweep type photomultiplier tube provided by the utility model includes vacuum tank, is arranged on vacuum tank
Optics input window is arranged on the inside of optics input window for receiving photon and being converted into the photocathode of electronics, successively set
It sets the electronics in the middle part of vacuum tank and accelerates electrode, focusing system, scanning system, electron multiplier cluster and anode, Yi Jiyong
(do not show in Fig. 2 in the current electrode of photocathode, focusing system, scanning system, electron multiplier cluster and anode supply
Out) and it is used to support their support column (support column is conventional structure, to be carried out according to device architecture in specific making devices
Specific design, thus be not shown in Fig. 2).
Vacuum vessel wall replaces superposition, ceramic/glass material and metal material with metal material using ceramic/glass material
Sealing-in is carried out by dedicated seal, sealing materials to be made, and can guarantee that the leak rate of device is held in a very low level, and
Device also has preferable anti-seismic performance.
Optics input window is arranged on one of end face of vacuum tank, and optics input window is made of glass, specifically
Material is determined according to photocathode wavelength response range, such as can be silica glass material, magnesium fluoride material or borosilicic acid
The transparent optical materials such as salt glass；It can be planar structure that optics, which inputs window shape, or curved-surface structure；Using planar junction
Structure, processing and fabricating cost and difficulty are smaller, but are easy to produce biggish difference and temporal dispersion；Using curved-surface structure,
Relatively high to processing and fabricating required precision, processing and manufacturing difficulty is also larger, but can reduce to a certain extent difference and
Temporal dispersion；It is connect between optics input window and vacuum tank using high frequency sealing-in, high temperature heat seal or indium seals sealing-in.
Electronics accelerates electrode to be arranged close to photocathode, and the electronics for generating to photocathode accelerate and shaping,
Electron beam is set to rapidly enter focusing system in the form of certain envelope；Electronics accelerates shape at electrode and photocathode relative position
It can be reticular structure, cylindrical structure or spherical structure.These types of structure is both in different use conditions and difference
It is required that carrying out selection: reticular structure is generally matched with plane photocathode and is used, can in this way between photocathode and acceleration pole
Be evenly distributed acceleration fields with being formed, have and quickly accelerate using by photocathode generation electronics, but this structure can generate it is biggish
Difference (target of photocathode different location has different focal lengths by focusing system), and this structure is relatively specific for by force
(transmitance of reticular structure is 50% or so) is used under luminous environment；Cylindrical structure and spherical structure generally with curved surface photocathode
It matches, overcomes the shortcomings of planar structure.
Focusing system accelerates electrode setting close to electronics, for converging wide-beam electronic, so that electron beam beam diameter is small
In the 1/5 of the input face size for the electron multiplication device for constituting electron multiplier cluster, to reduce the measurement error of device；Simultaneously
It is smaller (being less than 100ps) to control the disperse of electron beam transition time as far as possible in focusing, numerical value is the device final time point
The 1/3~1/5 of resolution.The utility model focusing system can mix focusing system for electrofocusing's system, magnetic focusing system, electromagnetism
Or other kinds of focusing system.
The best effect of detector is that the electronics of the same time transmitting of cathode can move to electron multiplier collection the same time
Group is doubled and is exported, but actually since the initial velocity of electronics is different, initial motion direction is different and movement
Path is different, just has the time difference (i.e. above-mentioned to get over so that electronics moves at electron multiplier cluster by focusing system
Temporal dispersion), this time difference is smaller, and the reliability of detection is higher, and the temporal resolution corresponding to device is (detectable adjacent
The time interval of two signals) it is also higher.So the utility model focusing system compares in design focuses on the transition time more
Scattered numerical value is controlled be less than 50ps preferably as far as possible.
Scanning system is for controlling so that the beam spot of focusing system outgoing moves to specified electron multiplication region, specifically
It is the direction of motion of electron beam after being focused by change, so that difference of the different moments beam motion to electron multiplier cluster
Electron multiplication device (or region) doubles the electron beam of different moments in different electron multiplication regions；It is scanned
The motion profile of electron beam can be rectilinear motion track after system, can also be fold-line-shaped motion profile, can also be arc
Motion profile or curvilinear path, or the combined motion profile of aforementioned four kinds of motion profiles；For arcuate movement rail
Mark and include arc combined motion profile, the period of motion of arcuate movement path portion can be single cycle,
It is also possible to the limited times period, is also possible to the unlimited period；
Since electron multiplier will discharge a large amount of electronics into component vacuum environment, and the electronics discharged just need it is certain
Time is supplemented (recovery time of device) by electrode, must assure that its charge has been mended device is detected next time when
It charges into.Electronics moves to output face by its plane of incidence in electron multiplier and is also required to the regular hour simultaneously, if twice
Detection time occur time be less than run duration of the electronics in electron multiplier, then twice detectable signal be likely to occur it is folded
Add, to generate detecting error.Therefore, the time interval of same the received electron beam in electron multiplication region of the utility model should be remote
The electron transit time and device recovery time intrinsic greater than the electron multiplier, the aliasing of detectable signal is avoided, thus
So that same electron multiplication region resolution ratio with higher；
Scanning system can be electric scanning system, magnetic scanning system, electromagnetism mixed sweep system or other kinds of scanning
System.Electric scanning system structure is simple, and high frequency sweep function may be implemented and (can achieve the scan frequency or more of 300MHz
It is high), but can the focus characteristics of system be generated with passive effect during the scanning process；Magnetic scanning system is due to needing to make magnetic
Coil, therefore volume is bigger, manufacture difficulty is also bigger, but can produce in deflection process to the focus characteristics of original system
Raw faint influence.
Electron multiplier cluster is arranged at the focal plane of focusing system, electron beam and production for collectiong focusing system exit
Raw multiplied electron；The utility model electron multiplier cluster can be beaten by tradition takes grade electron multiplication component to form, and can also adopt
Either there is the semiconductor devices of multiplication to electronics with microchannel plate electron multiplication component, in electron exit, acceleration, focusing
Region and scanning area structure and electric parameter under the same conditions, the electronics that microchannel plate electron multiplication component is constituted
For multiplier cluster under the premise of guaranteeing performance parameter, structure is the simplest；Microchannel plate electron multiplication component can be by a piece of
Microchannel plate, two panels microchannel plate or three pieces microchannel plate are formed, wherein the supplier of electricity of two panels and three pieces microchannel plate
Formula can be associating power supply mode, be also possible to the independently-powered mode of monolithic microchannel plate；
When electron multiplier cluster is made of traditional dynode electron multiplier, the anode of electron multiplier cluster is by constituting
All dynode electron multiplier anodes of electron multiplier cluster are formed, and are multianode export structure；Anode output signal
It can be current signal, voltage signal or quantity of electric charge signal etc.；
When electron multiplier cluster is made of microchannel plate electron multiplication component, electron multiplier cluster signal output electrode
Anode can be position-sensitive anode, multianode structure or microstrip line anode；Anode output signal can be believed for current signal, voltage
Number, quantity of electric charge signal or gray value of image etc.；
When electron multiplier cluster is made of semiconductor electron multiplier part, it is directed to different semiconductor electron multiplier parts
Signal export require, prepare corresponding anode construction；Anode output signal can be current signal, voltage signal, the quantity of electric charge
Signal or gray value of image etc..
Anode is for collecting multiplied electron beam caused by electron multiplier cluster；The signal output lead of anode passes through true
The metal wire reserved on empty container wall leads to outside vacuum tank and connect with the multiple signals read-out system of device exterior.Multichannel letter
Number read-out system is not belonging to photomultiplier tube body portion, but the function of photomultiplier tube is realized and needs to read with multiple signals
System is used cooperatively.Multiple signals read-out system is known circuits in this field, which should have: 1, the high-precision quantity of electric charge is visited
Survey (precision 25fc) or voltage magnitude detection (precision be 10 μ V), 2, Digital output, 3, working frequency to reach 1GHz.
Current electrode is connected by the contact conductor reserved on vacuum vessel wall with the power supply of device exterior.
Focusing system, scanning system, electron multiplier cluster, the center of anode are coaxial, and with power pole and support it
Support column link into an integrated entity.Focusing system, scanning system, electron multiplier cluster, the center of anode are coaxial, can be to avoid
The loss of detection information is generated outside electron motion to electron multiplier cluster effective coverage.
Embodiment:
The utility model is further described by taking MicroChannel plate multiplier tube as an example below.It should be noted that retouching here
The embodiment stated is served only for for example, being not intended to limit the utility model.
In the present embodiment:
Optics input window 2 on vacuum tank 1 uses planar wave input window；
Focusing system is by the first focusing electrode 41 of different shapes, the second focusing electrode 42 and tertiary focusing that set gradually
Electrode 43 forms；First focusing electrode 41, the second focusing electrode 42 and tertiary focusing electrode 43 are hollow structure, do not influence electronics
Shu Yundong, for specific shape according to field distribution Demand Design, design method is existing known method.
Scanning system 5 is oppositely arranged the hollow structure for forming that cross section is rectangle by four plate electrodes 51~54 two-by-two,
Electronics can only be passed through from four plate intermediate regions, and two opposite plate electrodes realize the electron beam of plate electrode normal orientation
Deflection；The power supply of the plate electrode 51~54 of scanning system is in such a way that two pairs of plate electrodes are independently-powered, scanning voltage point
It is not introduced into (contact conductor is not shown in Fig. 2) by first electrode lead 81 and second electrode lead 82, and two electrodes draw
Line should meet frequency transfer characteristic requirement.As shown in figure 4, applying satisfaction respectively to horizontal positioned plate and vertical plate of placing
The high-frequency high-voltage signal of sets requirement, so that the electricity that different moments are different degrees of by both direction by the electronics of scanning system
Field action power, to there is different drop points at electron multiplier cluster.Here sets requirement is according to multianode arrangement situation
It is specific to formulate, such as the anode of capsule shape arrangement, needing the voltage applied to scanning system is triangle+trapezoidal wave form, and needle
Anode situation for circular arrangement be need to scanning system apply voltage be then sine wave.
Electron multiplier cluster 6 is made of two panels MCP (Microchannel Plate).
Anode 7 includes insulating substrate 71, the multiple anode electrode units 72 being arranged on insulating substrate 71, multiple anode electricity
Uniformly arrangement (is made of, as shown in Figure 9) pole unit 72 in capsule shape two semi-circular segments and two straightways, wherein is located at straight
72 cross sectional shape of anode electrode unit on line segment is rectangle, and length is about 10mm, and width is about 2mm；In semi-circular segments
Anode electrode unit 72 cross sectional shape be it is trapezoidal, length is about 10mm.The interval of two neighboring anode electrode unit 72
Distance is 0.1~0.5mm.It is to guarantee between each electrode that the section of anode electrode unit 72 in semi-circular segments, which uses trapezoidal,
Spacing it is identical, to guarantee that the sampling time between each single electrode is identical, ensure that the detection of this anode construction with this
Precision.Trapezoidal design needs to meet following require: the trapezoidal midline length for being parallel to bottom is equal to other rectangular electrodes
Width；Two neighboring trapezoidal spacing is identical；All trapezoidal midpoints for being parallel to bottom middle line are all located at same circular arc.
Scanning system current electrode is used to power to scanning system 5；Multiplier tube accelerates and focus supply electrode passes through electrode
9 electron of lead accelerates electrode 3 and focusing system power supply；Electron multiplier cluster current electrode passes through 10 electron of contact conductor
Multiplier cluster 6 is powered.Multiplier tube accelerates and focus supply electrode, electron multiplier cluster current electrode are not shown in Fig. 2.
In order to verify the function of the present embodiment, using special electronic optical design software (such as CST STUDIO SUITE)
Analog simulation is carried out to the present embodiment, when establishing model due to only considering the acceleration of this photomultiplier tube, focusing and scanning function
Can, therefore the photomultiplier tube structural schematic diagram with reference to shown in Fig. 2 is established by planar wave input window (since its inner surface is coated with
Photocathode, is integrally used as photocathode in this model, and photocathode is individually not shown in Fig. 2), focusing system, scanning system
System and MCP composed by electron multiplier cluster.
In carrying out simulation process, it is -7500V that photocathode, which applies voltage, and it is -6700V that electronics, which accelerates 3 voltage of electrode,
First focusing electrode, 41 voltage is -4000V, and 42 voltage of the second focusing electrode is -6450V, and 43 voltage of tertiary focusing electrode is 0V,
6 voltage of electron multiplier cluster is 0V, and 5 voltage difference of scanning system is 600V, and the effective diameter of photocathode is 5mm, cathode plane
Total distance to the face MCP of electron multiplier cluster 6 is 350mm.
Fig. 5 be the present embodiment using after electrostatic focusing system and electrostatic deflection at 6 input face of electron multiplier cluster
Beam spot statistical chart.Electron beam center as shown in the figure is located at the 22.96mm on the upper side of the center MCP, and beam spot herein
Size bottom width is about 0.5mm, and halfwidth is about 0.21mm.
Fig. 6 be the present embodiment using after electrostatic focusing system and electrostatic deflection at 6 input face of electron multiplier cluster
Electron beam transition time statistical chart.(frequency of occurrence is most, or understands for electron beam transition time most probable numerical value as shown in the figure
For the run duration of Most electronic) it is 2.08ns, the disperse of electron beam transition time is 42ps.
Fig. 7 by the present embodiment using after electrostatic focusing system and electrostatic deflection in 6 input face of electron multiplier cluster
The beam energy statistical chart at place.Energy dispersion at beam motion to MCP as shown in the figure is 6998-6948=50eV.
Fig. 8 applies scanning voltage waveform schematic diagram by two pairs of plate electrodes of scanning system in the present embodiment.In this reality
Apply in example, periodic triangular wave be applied with to upper and lower two plate electrodes (54,53), and to the plate electrode of front and back two (52,
51) it is applied with periodic trapezoidal wave, two scanning circuit periods applied to plate electrode are identical, therefore electron beam may be implemented
Scan round, to realize that this photomultiplier tube continuous high frequency samples.
Electron trajectory figure at anode 7 when Fig. 9 applies scanning voltage shown in Fig. 8 for scanning system in the present embodiment.To sweeping
Retouch system apply scanning voltage as shown in Figure 8 when, beam motion track 73 at anode surface as shown in dotted arrow in Fig. 9,
As can be seen that focusing system and scanning system realize focusing to electron beam and well for electron beam spatial positions
Control.In practical work process, drop point of the electron beam at anode electrode is located at the center of each anode electrode unit 72
Domain.As shown in figure 9, sequentially successively to move to each anode electrode unit 72 under the action of scanning system right for electron beam
It answers electron multiplication region to carry out electron multiplication and exports, electron beam is added and passes through the time used in 72 width of Sole anode electrode unit
For t, n anode electrode unit 72 is contained in entire anode 7, then the next electron beam of the corresponding electron multiplication region reception of this anode 7
It needs using t*n, electron multiplication area realizes that electron multiplication, electronics output and the recovery of region electric property are provided and filled thus
The time of foot, to ensure that the detecting error in electron multiplication area is in reduced levels.
In order to improve the detection accuracy of photomultiplier tube, the output signal of anode 7 is carried out by the way of quantity of electric charge detection
Detection.Since microchannel plate is in the case where operating voltage is fixed, gain is also at relatively stable working condition, passes through survey
The quantity that photocathode generates electronics can be reflected by measuring the quantity of electric charge of the anode 7 after MCP doubles, so as to be finally inversed by light
The intensity of optical signal at electric cathode detects and realizes Digital output to the high frequency intensity sampling of continuous optical signal to realize,
The intensity distribution that optical signalling can be finally inversed by by the digitized processing (processing method is existing known method) in later period is bent
Line.
Figure 10 carries out waveform obtained by inverting and waveform input signal comparison diagram through anode output signal for the present embodiment, due to
Figure 10 is only intended to schematically illustrate, therefore there is no what practical significances for specific coordinate value, so not marking in figure.Figure 10
Middle top right plot is the change curve of original optical signal strength and time, and lower-left figure is to multianode difference channel output charge amount
Discrete distribution obtained by data processing is carried out, due to higher using frequency, this discrete distribution curve also can really reflect original
The variation relation of signal light intensity and time.
Claims (10)
1. a kind of focusing sweep type photomultiplier tube, including vacuum tank, optics input window, photocathode, electronics acceleration electrode,
Anode and for the current electrode to photocathode and anode supply；It is characterized by:
It further include focusing system, the scanning system, electron multiplier cluster being successively set in the middle part of the vacuum tank, Yi Jiyong
Accelerate in the multiplier tube powered to the focusing system, scanning system, electron multiplier cluster and focus supply electrode, scanning are
System current electrode, electron multiplier cluster current electrode, and it is used to support fixed-focus system, scanning system, electron multiplier
The support column of cluster；
The focusing system accelerates electrode setting close to the electronics, for converging electronics, so that electron beam beam diameter is small
In the 1/5 of the electron multiplication device input face size for constituting the electron multiplier cluster；The transition time disperse of focusing system
Less than 100ps；
The scanning system for changing electron beam after focusing the direction of motion so that focusing system outgoing beam motion extremely
Specified electron multiplication region；
The electron multiplier cluster is arranged at the focal plane of focusing system, electron beam and production for collectiong focusing system exit
Raw multiplied electron；The time interval of same the received electron beam in electron multiplication region should be 50~100 times of device recovery time；
The multiplied electron beam that the electron multiplier cluster generates is collected by the anode；
Contact conductor and metal wire are reserved on the vacuum tank；
The multiplier tube accelerates and focus supply electrode, scanning system current electrode, electron multiplier cluster current electrode are logical
The contact conductor is crossed to be connected with the power supply of device exterior；
The anode is for collecting multiplied electron beam caused by electron multiplier cluster, the signal output lead and multichannel of anode
Signal read-out system is connected；
The focusing system, scanning system, electron multiplier cluster, the center of anode are coaxial.
2. focusing sweep type photomultiplier tube according to claim 1, it is characterised in that: the electron multiplier cluster by
Tradition, which is beaten, takes grade electron multiplication component to form, perhaps using microchannel plate electron multiplication component composition or by semiconductor electronic
Multiplier device composition.
3. focusing sweep type photomultiplier tube according to claim 1 or 2, it is characterised in that: the optics input window is
Planar structure or curved-surface structure.
4. focusing sweep type photomultiplier tube according to claim 1 or 2, it is characterised in that: the optics input window with
High frequency sealing-in between vacuum tank, high temperature heat seal connect or indium envelope sealing-in.
5. focusing sweep type photomultiplier tube according to claim 1 or 2, it is characterised in that: the electronics accelerates electrode
For reticular structure, cylindrical structure or spherical structure.
6. focusing sweep type photomultiplier tube according to claim 1 or 2, it is characterised in that: the focusing system is electricity
Focusing system, magnetic focusing system or electromagnetism mix focusing system.
7. focusing sweep type photomultiplier tube according to claim 1 or 2, it is characterised in that: the scanning system is electricity
Scanning system, magnetic scanning system or electromagnetism mixed sweep system.
8. focusing sweep type photomultiplier tube according to claim 1 or 2, it is characterised in that: the optics input window is adopted
It is made of glass or crystal.
9. focusing sweep type photomultiplier tube according to claim 8, it is characterised in that: the optics input window uses stone
English glass material, magnesium fluoride material or borosilicate glass material are made.
10. focusing sweep type photomultiplier tube according to claim 1 or 2, it is characterised in that: the anode includes insulation
Substrate, the multiple anode electrode units being arranged on insulating substrate；Multiple anode electrode units are uniformly arranged in by two semicircles
The capsule shape that section and two straightways are constituted；Wherein, the anode electrode unit cross sectional shape on straightway is rectangle, length
Degree is 10mm, width 2mm；The cross sectional shape of anode electrode unit in semi-circular segments be it is trapezoidal, the length is 10mm；Phase
The spacing distance of adjacent two anode electrode units is 0.1~0.5mm；Section is trapezoidal anode electrode unit, is parallel to
The midline length of bottom is equal to the width for the anode electrode unit that section is rectangle；Two neighboring section is trapezoidal anode electrode
Spacing between unit is identical；All sections are trapezoidal anode electrode unit, are parallel to the middle point of trapezoidal upper bottom middle line
In same circular arc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821095091.1U CN208580715U (en) | 2018-07-11 | 2018-07-11 | Focusing scanning type photomultiplier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821095091.1U CN208580715U (en) | 2018-07-11 | 2018-07-11 | Focusing scanning type photomultiplier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208580715U true CN208580715U (en) | 2019-03-05 |
Family
ID=65510148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821095091.1U Active CN208580715U (en) | 2018-07-11 | 2018-07-11 | Focusing scanning type photomultiplier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208580715U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065434A (en) * | 2018-07-11 | 2018-12-21 | 中国科学院西安光学精密机械研究所 | Focusing scanning type photomultiplier |
-
2018
- 2018-07-11 CN CN201821095091.1U patent/CN208580715U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065434A (en) * | 2018-07-11 | 2018-12-21 | 中国科学院西安光学精密机械研究所 | Focusing scanning type photomultiplier |
| CN109065434B (en) * | 2018-07-11 | 2024-04-05 | 中国科学院西安光学精密机械研究所 | Focusing scanning type photomultiplier |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109065434A (en) | Focusing scanning type photomultiplier | |
| US9625588B2 (en) | Use of flat panel microchannel photomultipliers in sampling calorimeters with timing | |
| Anderlini et al. | Intrinsic time resolution of 3D-trench silicon pixels for charged particle detection | |
| US7141785B2 (en) | Ion detector | |
| CN108257844A (en) | Gating focusing type photomultiplier | |
| Conneely et al. | The TORCH PMT: a close packing, multi-anode, long life MCP-PMT for Cherenkov applications | |
| CN102507623B (en) | Non-scanning type wavelength dispersion X-ray fluorescence spectrometer | |
| US7485872B2 (en) | Large area, pico-second resolution, time of flight detectors | |
| Aprile et al. | Measurements of proportional scintillation and electron multiplication in liquid xenon using thin wires | |
| Wang et al. | Design and tests of the prototype beam monitor of the CSR external target experiment | |
| CN208580715U (en) | Focusing scanning type photomultiplier | |
| CN110379702A (en) | A kind of adaptive Larger Dynamic range photomultiplier tube | |
| Lehmann | Status and perspectives of vacuum-based photon detectors | |
| CN102507464B (en) | Photon counting full-spectrum direct reading absorption spectrometer | |
| CN202330728U (en) | X-ray detector | |
| Hendrix | Position sensitive X-ray detectors | |
| US9812309B2 (en) | Microwave cavity resonator detector | |
| CN103065920B (en) | A kind of flat panel detector | |
| Xie et al. | Fast-timing microchannel plate photodetectors: Design, fabrication, and characterization | |
| Xie et al. | Rate capability and magnetic field tolerance measurements of fast timing microchannel plate photodetectors | |
| KR101610158B1 (en) | X-ray detector with metal substrates | |
| Shin et al. | Advances in the Large Area Picosecond Photo-Detector (LAPPD): 8" x 8" MCP-PMT with Capacitively Coupled Readout | |
| US3226594A (en) | Electron beam multiplication tube | |
| Križan | Overview of photon detectors for fast single photon detection | |
| Bussat et al. | A next generation, high speed detector for synchrotron radiation research |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |