CN208580713U - Reaction chamber modular construction and reaction chamber - Google Patents

Reaction chamber modular construction and reaction chamber Download PDF

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Publication number
CN208580713U
CN208580713U CN201820317132.0U CN201820317132U CN208580713U CN 208580713 U CN208580713 U CN 208580713U CN 201820317132 U CN201820317132 U CN 201820317132U CN 208580713 U CN208580713 U CN 208580713U
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China
Prior art keywords
reaction chamber
modular construction
film layer
oxidation film
utility
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CN201820317132.0U
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Chinese (zh)
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李成
李一成
彭宇霖
曹永友
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Beijing Naura Microelectronics Equipment Co Ltd
Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Priority to CN201820317132.0U priority Critical patent/CN208580713U/en
Priority to PCT/CN2018/118897 priority patent/WO2019169912A1/en
Priority to JP2020547138A priority patent/JP7066868B2/en
Priority to US16/976,703 priority patent/US20200406222A1/en
Priority to KR1020207024672A priority patent/KR102434345B1/en
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Abstract

The utility model provides a kind of reaction chamber modular construction, including hardware body and oxidation film layer, wherein hardware body is made of 5 line aluminium alloy materials;Oxidation film layer aoxidizes to be formed by hardware body.The utility model also provides reaction chamber.The corrosion resistance of reaction chamber component can be improved in the utility model, so as to improve the service life of reaction chamber.

Description

Reaction chamber modular construction and reaction chamber
Technical field
The utility model belongs to microelectronic processing technique field, and in particular to a kind of reaction chamber modular construction and reaction Chamber.
Background technique
Aluminium alloy intensity with higher, good weldability, anode oxide film have good corrosion resistance, since Production plasma reaction chamber component has been widely used in it the eighties in last century.It is a large amount of due to containing in aluminium alloy Alloying element, such as Mg, Cu, Zn, Mn, Fe, Si use reaction gas in plasma etch process in reaction chamber Including CF4/O2、NF3、Cl2、CH4/ Ar etc. generates a large amount of Cl base, F base isoreactivity free radical, can send out with these alloying elements Raw reaction production metal compound particles, these particles easily cause the metallic pollution on reaction chamber modular construction surface, seriously Influence the electrical property of device;Furthermore metallic particles is difficult to clean in reaction chamber, and the mistake of entire reaction chamber is even caused when serious Effect.
Currently, reaction chamber modular construction usually selects 6 line aluminium alloys of A6061 etc. to be process, and use sulphur Sour hard anodizing forms one layer of aluminum oxide film on the surface of component, to prevent plasma to reaction chamber component knot Structure corrosion.Find in practical applications: the reaction chamber modular construction is still easy in the environment of plasma bombardment It causes to corrode, that is, cause metallic pollution to chamber.
Utility model content
The utility model aims to solve at least one of the technical problems existing in the prior art, proposes a kind of reaction chamber The corrosion resistance of reaction chamber component can be improved in room modular construction and reaction chamber, so as to improve the use of reaction chamber Service life.
One of in order to solve the above problem, the utility model provides a kind of reaction chamber modular construction, including hardware body And oxidation film layer, in which: the hardware body is made of 5 line aluminium alloy materials;The oxidation film layer passes through hardware body oxygen Change and is formed.
Preferably, ceramic layer is formed on the oxidation film layer.
Preferably, the oxidation film layer surface has default roughness.
Preferably, the range of the default roughness is at 3.2 μm~6.3 μm.
Preferably, the thickness range of the aluminum oxide film is at 50 μm~60 μm.
Preferably, the ceramic layer includes: yttrium oxide or zirconium oxide.
Preferably, the thickness range of the ceramic layer is at 50 μm~200 μm.
The utility model also provides a kind of reaction chamber, the reaction chamber modular construction including above-mentioned offer.
The utility model has the following beneficial effects:
In the utility model, overcome in the prior art only consider need the intensity of reaction chamber modular construction higher and Using the technology prejudice of 6 line aluminium alloys, 5 line aluminium alloys are used, since 5 line aluminium alloys are processing hardening type Al-Mg aluminium alloy (such as A5052), wherein Si element is few, therefore, is not susceptible to grain boundary corrosion, so as to improve reaction chamber component Corrosion resistance.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of reaction chamber modular construction provided by the embodiment of the utility model.
Specific embodiment
To make those skilled in the art more fully understand the technical solution of the utility model, next pair with reference to the accompanying drawing Reaction chamber modular construction provided by the utility model and reaction chamber are described in detail.
Illustrate herein, reaction chamber modular construction hereinafter includes but is not limited to: the inner wall of reaction chamber, setting exist Liner, adjustment bracket, electrostatic chuck on inner wall etc..
Embodiment 1
Fig. 1 is the structural schematic diagram of reaction chamber modular construction provided by the embodiment of the utility model;Referring to Fig. 1, this Utility model embodiment 1 provides a kind of reaction chamber modular construction, including hardware body 1 and oxidation film layer 11, wherein the portion Part ontology 1 is made of 5 line aluminium alloy materials;The oxidation film layer 11 is formed by the oxidation of hardware body 1.
Describe reaction chamber modular construction 1 provided by the embodiment of the utility model be how to improve corrosion resistance before, First the reason of the corrosion resistance difference of reaction chamber modular construction 1 in the prior art is studied in concrete analysis, is made a concrete analysis of as follows:
6 line aluminium alloys used in the prior art for heat-treatable strengthened type Al-Mg-Si aluminium alloy (for example, A6061), Because adding Si forms Mg2Si reinforced phase, strengthening effect can be increased, still, since Si element excessively causes grain boundary corrosion, from And influence the corrosion resistance of reaction chamber modular construction.
In the present embodiment, overcomes and only consider to need the intensity of reaction chamber modular construction higher and adopt in the prior art The technical issues of with 6 line aluminium alloy, uses 5 line aluminium alloys, since 5 line aluminium alloys are processing hardening type Al-Mg aluminium alloy (such as A5052, A5054, A5083 etc.), wherein Si element is few, therefore, is not susceptible to grain boundary corrosion, so as to improve The corrosion resistance of reaction chamber component.
Preferably, ceramic layer 12 is formed on oxidation film layer 11, ceramic layer 12 can be used as a barrier plasma The barrier layer of corrosion, so as to preferably improve the corrosion resistance of reaction chamber modular construction.
In order to improve the adhesive force between ceramic layer 12 and aluminum oxide film 11, the present embodiment uses the following two kinds mode To realize:
First way: the surface of oxidation film layer 11 has default roughness;In this way, ceramic layer 12, which is formed in, to be had in advance If on the surface of the oxidation film layer 11 of roughness.
It is further preferred that the range of default roughness is at 3.2 μm~6.3 μm, this can guarantee oxidation film layer 11 with There is stronger adhesive force between ceramic layer 12.
It should be noted that can be, but not limited to adopt to realize that the surface of oxidation film layer 11 has certain roughness Sandblasting is carried out with surface of the plasma blasting treatment mode to oxidation film layer 11 to realize.
The second way: ceramic layer is formed with the following method: carrying out being preheated to 100 DEG C~120 DEG C to hardware body 1; Purity is chosen greater than 99.99% and granularity is sprayed in 5 μm~10 μm of ceramic powder;Reducing internal heat is (preferably but unlimited In annealing -5 hours 2 hours at a temperature of 100 DEG C~120 DEG C).High-purity and cause are belonged to using the ceramic layer that this method is formed Close coating, so that the adhesive force not only in aluminum oxide film layer 11 is strong;And porosity is small, can preferably stop by etc. Gas ions corrosion.
Preferably, ceramic layer 12 includes but is not limited to: yttrium oxide or zirconium oxide, since yttrium oxide and zirconium oxide have Preferably than aluminium oxide plasma etch resistance can and the longer service life, therefore, this compared with prior art, not only in oxygen Ceramic layer 12 is increased on the basis of change aluminium film 11;And the corrosion resistance and service life of ceramic layer 12 are higher than aluminium oxide Layer, therefore, can largely improve the corrosion resistance and service life of reaction chamber modular construction.
Additionally preferably, the thickness range of ceramic layer 12 is at 50 μm~200 μm, to meet corrosion resistance requirement well.
In this embodiment, it is preferred that the outer surface using reaction chamber modular construction 1 made of 5 line aluminium alloys uses Nitration mixture anode oxidation method forms oxidation film layer 11, this is because: 6 line aluminium alloys contain more Si element, anodic oxidation Silicon stays in film as simple substance particle in journey, not oxidized, it is also possible to and insoluble, the anodic oxidation of nitration mixture system needs high voltage, The silicon stayed in film be easy to cause oxidation membrane porosity, when film is thicker, is easy to produce crackle.Therefore nitration mixture system anodic oxidation General 5 systems for selecting silicon content less, are not only able to satisfy intensity requirement, but also be able to satisfy the requirement of its oxidation film compactness, that is, The porosity of oxidation film layer 11 can be not only reduced, but also the heat resistance of the aluminum oxide film obtained is preferable, can be avoided (such as 80 DEG C~120 DEG C) flawless generation under high temperature is set to be more suitable for 14nm or less the etching more demanding to chamber Standby requirement.Certainly, in practical applications, the outer surface of reaction chamber modular construction 1 can also use but to be not limited to sulfuric acid hard Matter anode oxidation method forms the oxidation film layer 11.
Preferably, nitration mixture anode oxidation method includes:
(preheating for example, hardware body 1 is placed in 30 DEG C~40 DEG C of warm water) is preheated to hardware body 1;
By hardware body 1 be placed on mass fraction than nitric acid of the range between 0.8~1.2, oxalic acid electroplating bath in into (mode that stirring in this step, can be used makes the solution in electroplating bath keep homogenization temperature, which can for row anodic oxidation To be set according to practicable process temperature);
Carrying out sealing of hole using hole-sealing technology, (hole-sealing technology includes steam under pressure sealing of hole mode, such as 110KPa, can be with Boiling water sealing hole etc.).
Porosity using the oxidation film layer 11 of nitration mixture anode oxidation method acquisition is very low.Certainly, in practical application In, other mixed acid can also be used, for example, nitric acid and chromic acid, nitric acid and phosphoric acid etc..
Preferably, the thickness range of oxidation film layer 11 can preferably improve corrosion resistance at 50 μm~60 μm.
Embodiment 2
The utility model embodiment provides a kind of reaction chamber, the reaction provided including the utility model above-described embodiment 1 Chamber part structure.
Specifically, reaction chamber includes but is not limited to: physical vapor deposition chamber, chemical vapor deposition chamber, etch chamber Room etc.
Reaction chamber provided by the embodiment of the utility model, due to the reaction chamber component provided using above-described embodiment 1 Structure, therefore the corrosion resistance of reaction chamber can be improved, so as to improve service life.
It is understood that embodiment of above is merely to illustrate that the principles of the present invention and the example that uses Property embodiment, however the utility model is not limited thereto.For those skilled in the art, it is not taking off In the case where spirit and essence from the utility model, various changes and modifications can be made therein, these variations and modifications are also considered as The protection scope of the utility model.

Claims (8)

1. a kind of reaction chamber modular construction, which is characterized in that including hardware body and oxidation film layer, in which:
The hardware body is made of 5 line aluminium alloy materials;
The oxidation film layer aoxidizes to be formed by hardware body.
2. reaction chamber modular construction according to claim 1, which is characterized in that
Ceramic layer is formed on the oxidation film layer.
3. reaction chamber modular construction according to claim 2, which is characterized in that
The oxidation film layer surface has default roughness.
4. reaction chamber modular construction according to claim 3, which is characterized in that the range of the default roughness exists 3.2 μm~6.3 μm.
5. reaction chamber modular construction according to claim 1, which is characterized in that the thickness range of the oxidation film layer exists 50 μm~60 μm.
6. reaction chamber modular construction according to claim 2, which is characterized in that the ceramic layer include: yttrium oxide or Person's zirconium oxide.
7. reaction chamber modular construction according to claim 2, which is characterized in that the thickness range of the ceramic layer is 50 μm~200 μm.
8. a kind of reaction chamber, which is characterized in that including reaction chamber modular construction described in claim 1-7 any one.
CN201820317132.0U 2018-03-08 2018-03-08 Reaction chamber modular construction and reaction chamber Active CN208580713U (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201820317132.0U CN208580713U (en) 2018-03-08 2018-03-08 Reaction chamber modular construction and reaction chamber
PCT/CN2018/118897 WO2019169912A1 (en) 2018-03-08 2018-12-03 Reaction chamber component and preparation method therefor, and reaction chamber
JP2020547138A JP7066868B2 (en) 2018-03-08 2018-12-03 Reaction chamber components, fabrication methods, and reaction chambers
US16/976,703 US20200406222A1 (en) 2018-03-08 2018-12-03 Reaction chamber component, preparation method, and reaction chamber
KR1020207024672A KR102434345B1 (en) 2018-03-08 2018-12-03 Reaction chamber member and manufacturing method thereof, reaction chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201820317132.0U CN208580713U (en) 2018-03-08 2018-03-08 Reaction chamber modular construction and reaction chamber

Publications (1)

Publication Number Publication Date
CN208580713U true CN208580713U (en) 2019-03-05

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109935541A (en) * 2019-03-13 2019-06-25 江苏鲁汶仪器有限公司 A kind of reaction chamber
CN110246738A (en) * 2018-03-08 2019-09-17 北京北方华创微电子装备有限公司 Reaction chamber modular construction and preparation method thereof, reaction chamber

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110246738A (en) * 2018-03-08 2019-09-17 北京北方华创微电子装备有限公司 Reaction chamber modular construction and preparation method thereof, reaction chamber
CN109935541A (en) * 2019-03-13 2019-06-25 江苏鲁汶仪器有限公司 A kind of reaction chamber

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