CN208571573U - Self-built charging inputs OVP overvoltage crowbar - Google Patents
Self-built charging inputs OVP overvoltage crowbar Download PDFInfo
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- CN208571573U CN208571573U CN201820985338.0U CN201820985338U CN208571573U CN 208571573 U CN208571573 U CN 208571573U CN 201820985338 U CN201820985338 U CN 201820985338U CN 208571573 U CN208571573 U CN 208571573U
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Abstract
The utility model discloses self-built chargings to input OVP overvoltage crowbar; the source electrode of the PMOSFET pipe of the circuit connects charging voltage input interface, drain electrode connects charging the mainboard interface; it is connected to resistance R2002, capacitor C2003 between the grid of PMOSFET pipe, source electrode, resistance R2002 is connected with resistance R2003；The base stage of PNP triode is connected to capacitor C2001, bilateral transient voltage suppression diode, another terminating resistor R2001 of bilateral transient voltage suppression diode, the collector of PNP triode is connected between resistance R2002, resistance R2003, the emitter of PNP triode meets charging voltage input interface VCHG, and the emitter of PNP triode is connected with capacitor C2002.When VCHG input voltage is greater than 7.5V, the cut-off of PMOSFET pipe can use, VCHG_IN input voltage is closed, and back-end circuit is protected.
Description
Technical field
The utility model relates to technical field of mobile phones, input OVP overvoltage crowbar more particularly, to a kind of self-built charging.
Background technique
For mobile phone, it is then easy damage equipment when charging input voltage is greater than preset value, the utility model is intended to base
In PMOS, PNP, two-way TVS, one charging input OVP overvoltage crowbar of configuration.
Utility model content
The purpose of this utility model is exactly to solve the above-mentioned problems, to provide a kind of self-built charging input OVP overvoltage protection
Circuit.
In order to solve the above technical problems, the utility model provides a kind of self-built charging input OVP overvoltage crowbar,
It include: capacitor C2001, resistance R2001, bilateral transient voltage suppression diode T2001, PNP triode Q2001, resistance
R2003, resistance R2002, capacitor C2003, PMOSFET pipe Q2002, capacitor C2002；The source electrode of the PMOSFET pipe Q2002 connects
Charging voltage input interface VCHG, drain electrode connect between the grid of charging the mainboard interface VCHG_IN, PMOSFET pipe Q2002, source electrode
It is connected to resistance R2002, capacitor C2003, the resistance R2002 are connected with the resistance R2003 of other end ground connection；Tri- pole PNP
The base stage of pipe Q2001 is connected to capacitor C2001, bilateral transient voltage suppression diode T2001, another termination of capacitor C2001
Ground, another terminating resistor R2001 of bilateral transient voltage suppression diode T2001, the resistance R2001 other end ground connection,
The collector of the PNP triode Q2001 is connected between resistance R2002, resistance R2003, the hair of the PNP triode Q2001
Emitter-base bandgap grading meets charging voltage input interface VCHG, and the emitter of the PNP triode Q2001 is connected with the capacitor of other end ground connection
C2002。
Further, the PNP triode Q2001 is DXT790AP5.
Further, the PMOSFET pipe Q2002 is PPM6N30V9.
Further, the bilateral transient voltage suppression diode T2001 is PESDNC2FD5VBH.
The utility model has the following beneficial effects: the utility model is based on PMOS, PNP, two-way TVS, in VCHG
When input voltage is greater than 7.5V, the cut-off of PMOSFET pipe can use, VCHG_IN input voltage is closed, and back-end circuit is protected.
Detailed description of the invention
Fig. 1 is that self-built charging inputs OVP overvoltage crowbar schematic diagram.
Specific embodiment
In order to be easy to understand the technical means, creative features, achievement of purpose, and effectiveness of the utility model, under
In conjunction with specific embodiments, the utility model is further described in face.
As shown in Figure 1, a kind of self-built charging input OVP overvoltage crowbar comprising: capacitor C2001, resistance R2001,
Bilateral transient voltage suppression diode T2001, PNP triode Q2001, resistance R2003, resistance R2002, capacitor C2003,
PMOSFET pipe Q2002, capacitor C2002.
Wherein, the source electrode of the PMOSFET pipe Q2002 meets charging voltage input interface VCHG, drain electrode connects charging the mainboard and connects
Resistance R2002, capacitor C2003, the resistance R2002 are connected between the grid of mouthful VCHG_IN, PMOSFET pipe Q2002, source electrode
It is connected with the resistance R2003 of other end ground connection.PMOSFET pipe Q2002 can choose the models such as PPM6N30V9.
Wherein, the base stage of PNP triode Q2001 is connected to capacitor C2001 and bilateral transient voltage suppression diode
T2001, the capacitor C2001 other end ground connection, another terminating resistor of bilateral transient voltage suppression diode T2001
R2001, the resistance R2001 other end ground connection, the collector of the PNP triode Q2001 are connected to resistance R2002, resistance
Between R2003, the emitter of the PNP triode Q2001 meets charging voltage input interface VCHG, the PNP triode Q2001
Emitter be connected with the other end ground connection capacitor C2002.Here PNP triode Q2001 can choose the types such as DXT790AP5
Number, bilateral transient voltage suppression diode T2001 can choose the models such as PESDNC2FD5VBH.
In Fig. 1, VCHG signal charges from mobile phone accesses the charging voltage of input, and VCHG_IN is entered after overprotection
The voltage signal of charging the mainboard.
The working principle of the utility model is: when VCHG is greater than 5.7V, due to bilateral transient voltage suppression diode
The C-V characteristic of T2001, so that the collector current of PNP triode Q2001 increases, the G for improving PMOSFET pipe Q2002 is extremely electric
Pressure, so that PMOSFET pipe Q2002 ends, VCHG_IN input voltage is closed, and protects back-end circuit.
It will be understood by those skilled in the art that the respective embodiments described above are to realize the specific implementation of the utility model
Example, and in practical applications, can to it, various changes can be made in the form and details, without departing from the spirit of the utility model
And range.
Claims (4)
1. a kind of self-built charging input OVP overvoltage crowbar, characterized in that it comprises: capacitor C2001, resistance R2001,
Bilateral transient voltage suppression diode T2001, PNP triode Q2001, resistance R2003, resistance R2002, capacitor C2003,
PMOSFET pipe Q2002, capacitor C2002；
The source electrode of the PMOSFET pipe Q2002 meets charging voltage input interface VCHG, drain electrode meets charging the mainboard interface VCHG_IN,
Resistance R2002 is connected between the grid of PMOSFET pipe Q2002, source electrode, capacitor C2003, the resistance R2002 are connected with another
Hold the resistance R2003 of ground connection；
The base stage of the PNP triode Q2001 is connected to capacitor C2001, bilateral transient voltage suppression diode T2001, the electricity
Hold C2001 other end ground connection, another terminating resistor R2001 of bilateral transient voltage suppression diode T2001, the resistance
R2001 other end ground connection, the collector of the PNP triode Q2001 are connected between resistance R2002, resistance R2003, the PNP
The emitter of triode Q2001 meets charging voltage input interface VCHG, and the emitter of the PNP triode Q2001 is connected with separately
The capacitor C2002 of one end ground connection.
2. self-built charging according to claim 1 inputs OVP overvoltage crowbar, which is characterized in that the PNP triode
Q2001 is DXT790AP5.
3. self-built charging according to claim 1 inputs OVP overvoltage crowbar, which is characterized in that the PMOSFET pipe
Q2002 is PPM6N30V9.
4. self-built charging according to claim 1 inputs OVP overvoltage crowbar, which is characterized in that the two-way transient state
Voltage suppression diode T2001 is PESDNC2FD5VBH.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820985338.0U CN208571573U (en) | 2018-06-26 | 2018-06-26 | Self-built charging inputs OVP overvoltage crowbar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820985338.0U CN208571573U (en) | 2018-06-26 | 2018-06-26 | Self-built charging inputs OVP overvoltage crowbar |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208571573U true CN208571573U (en) | 2019-03-01 |
Family
ID=65488015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820985338.0U Active CN208571573U (en) | 2018-06-26 | 2018-06-26 | Self-built charging inputs OVP overvoltage crowbar |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208571573U (en) |
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2018
- 2018-06-26 CN CN201820985338.0U patent/CN208571573U/en active Active
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