CN208570182U - Semiconductive blocks water binding strap solid coated structure - Google Patents
Semiconductive blocks water binding strap solid coated structure Download PDFInfo
- Publication number
- CN208570182U CN208570182U CN201820974303.7U CN201820974303U CN208570182U CN 208570182 U CN208570182 U CN 208570182U CN 201820974303 U CN201820974303 U CN 201820974303U CN 208570182 U CN208570182 U CN 208570182U
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- CN
- China
- Prior art keywords
- silk
- supporting body
- main supporting
- sides
- binding strap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 239000007787 solid Substances 0.000 title claims abstract description 16
- 238000005452 bending Methods 0.000 claims abstract description 19
- 230000000903 blocking effect Effects 0.000 claims description 11
- 230000004927 fusion Effects 0.000 claims description 5
- 238000000576 coating method Methods 0.000 abstract description 27
- 239000011248 coating agent Substances 0.000 abstract description 23
- 239000011247 coating layer Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 39
- 238000004513 sizing Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000001680 brushing effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000002759 woven fabric Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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- Laminated Bodies (AREA)
Abstract
The utility model belongs to binding strap field, a kind of semiconductive is intended to provide to block water binding strap solid coated structure, its key points of the technical solution are that including main supporting body, the two sides of the main supporting body, which are equipped with, extends silk, face is bent where the extension silk to main supporting body, the bending part for extending silk is symmetrical arranged on main supporting body two sides or mirror settings, symmetrical centre or mirrored center are main supporting body.After in the two sides of main supporting body, setting extends silk, silk will be extended and be stacked on main supporting body two sides, so that the two sides of winner's supporting body is extended silk and is separated into a number of smaller parts, form several small recess, when coating coating, coating, which is fallen in, to be extended in the space that silk separates, the space that silk is separated out will first be extended through characteristics such as the surface tension of coating itself, ductility to fill up, again on this basis, conventional coating thickness can also be added again, make to support the coating layer thickness of carrier two sides thicker, the probability for white point of locally leaving a blank is smaller.
Description
Technical field
The utility model relates to binding strap field, in particular to a kind of semiconductive blocks water binding strap solid coated structure.
Background technique
Semiconductive block water binding strap solid coated structure between each component of power cable, have bind, block water, every
From functions such as, shieldings, and it is non-corrosive to treat lashing part.
Currently, the Chinese patent of Publication No. CN206331817U discloses a kind of special more imperial waterstops of semiconductive, it is wrapped
Include woven fabric, the woven fabric two sides are equipped with semi-conductive layer I and semi-conductive layer II, another opposite with woven fabric of semi-conductive layer I
Side is equipped with semiconductive water blocking layer.
Semi-conductive layer on the special more imperial waterstops of this semiconductive, usually using the structure of coating, woven fabric is held as master
Carrier is brushed on main supporting body two sides.Since coated structure only can be one layer of coat very thin, liquid has certain stream again
Dynamic property so being not easy during coating in the main many materials of supporting body surface adhesion, therefore coats resulting film thickness
It is limited, in use if be scratched, it is easy to influence electric conductivity.
Utility model content
The utility model is to provide a kind of semiconductive and blocks water binding strap solid coated structure, hinders compared to conventional semiconductive
Water binding strap can have thicker coating.
The above-mentioned technical purpose of the utility model has the technical scheme that
A kind of semiconductive blocks water binding strap solid coated structure, including main supporting body, and the two sides of the main supporting body are equipped with
Extend silk, described to extend width of length of the silk beyond main supporting body side at least more than main supporting body, the extension silk is to master
Face bending where supporting body, the bending part for extending silk are symmetrical arranged or mirror settings on main supporting body two sides, it is symmetrical in
The heart or mirrored center are main supporting body.
By using above-mentioned technical proposal, if directly applying brush applied coating in the two sides of main supporting body, coating can be adhered to
Surface be only main supporting body two sides fairing surface.After setting extends silk in the two sides of main supporting body, silk will be extended and be stacked on
Main supporting body two sides make the two sides of winner's supporting body be extended silk and are separated into a number of smaller parts, form several small recess,
When coating coating, coating, which is fallen in, to be extended in the space that silk separates, and passes through the characteristics such as the surface tension of coating itself, ductility
The space that is separated out of silk will first be extended to fill up, then on this basis, additionally it is possible to again plus conventional coating thickness, make to support carrier two sides
Coating layer thickness it is thicker, the probability for white point of locally leaving a blank is smaller.
Further setting: the extension silk is set as wave silk, and the waveform bending profile normal of the wave silk is in master
Supporting body.
By using above-mentioned technical proposal, wave silk is arranged perpendicular to main supporting body, the depth in the space intercepted out
It is deeper, thicker dope layer can be brushed.If only conventional linear type extends silk, the spatial depth intercepted out is very shallow, institute
The brushing thickness that can be adhered to also becomes smaller.
Further setting: the main supporting body two sides is painted with conductive layer, and the diameter for extending silk bending part is less than
The thickness of conductive layer.
Prolong by using above-mentioned technical proposal if the thickness of conductive layer is less than the height for extending the undulating shape of silk
Stretch silk protrusion conductive layer surface, extend silk and be both easy the damage that is worn, it is also uneven to bind belt surface, influence using.
Further setting: the extension silk is divided at least two groups, wherein the length of one group of extension silk is at least main supporting body
Twice of width.
By using above-mentioned technical proposal, extend in silk, longer one group can fold at least twice, be capable of providing and partly lead
Structure is thickened required for two layers of brushing surface of electric layer and water blocking layer.
Further setting: the main supporting body is wherein additionally provided with water blocking layer, longer one group of extension on the conductive layer of one side
One section of the close main supporting body of silk is embedded in conductive layer, in one section of embedment water blocking layer of main supporting body.
By using above-mentioned technical proposal, between semi-conductive layer and water blocking layer extend silk it is mutual influence it is small, phase
When then first scratching one layer of semi-conductive layer, then one layer of water blocking layer is scratched, two coatings can be thickened individually.
Further setting: extend silk bending setting, the part beyond main supporting body edge is reversed after the extension silk bending
Bending setting.
By using above-mentioned technical proposal, extend silk after bending, reversed bending can be that the thickening position of extension silk exists
The same side, that is, thickeied twice in the same side of substrate.
Further setting: the junction for extending silk and main supporting body is equipped with for improving bonding strength between the two
Fusion point.
By using above-mentioned technical proposal, due to extending the cross-sectional area very little of silk, so in actual use,
Extend silk fracture after being easy to happen force, and extends silk and thermoplastic is mostly used to be made, after thermoplastic applies fusion point,
Extend silk to be not easy under the premise of breaking, additionally it is possible to increase connection area.
In conclusion the utility model has the following beneficial effects:
1, can apply thicker coating in conventional substrate surface can be in coating compared to conventional coating layer thickness
It is upper to apply more sizing materials, keep the semiconductive binding strap that blocks water more durable.
Detailed description of the invention
Fig. 1 is blocked water the schematic diagram of binding strap solid coated structure for embodying semiconductive.
In figure, 1, main supporting body；2, extend silk；3, conductive layer；4, water blocking layer；5, fusion point.
Specific embodiment
The utility model is described in further detail below in conjunction with attached drawing.
A kind of semiconductive blocks water binding strap solid coated structure, as shown in Figure 1, including main supporting body 1, main supporting body 1 is adopted
It is made of Te Duolong, is equipped in the two sides of main supporting body 1 and extends silk 2, extended silk 2 and be made of hot-melt plastic.
Extend silk 2 and be set as wave silk, everywhere waveform is semicircle, and plane is hung down where wavy bending profile
Directly in main 1 place plane of supporting body.
As shown in Figure 1, the extension silk 2 of main 1 two sides of supporting body is bent to main 1 two sides of supporting body respectively, extension silk 2 is made to exist
Main 1 two sides of supporting body are uniformly distributed, and are several regions by the two sides plane separation of main supporting body 1, in blade coating sizing material
In the process, it is divided into twice, is first filled up for the first time with sizing material by the region that is separated out of silk 2 is extended, then the sizing material of equal blade coating for the first time is done
After dry, carry out second and scratch, the semi-finished product that first time blade coating is completed are regarded as raw material at this time, be equivalent to applied it is swiped through
Continue to brush on the substrate of a time sizing material, has thickened the thickness of the coatings such as semi-conductive layer 3.And main 1 two sides of supporting body is painted with
Conductive layer 3, the diameter for extending 2 bending part of silk are less than the thickness of conductive layer 3, can to make to extend silk 2 after the completion of brushing
Not in coating.
There is abundant length to enable to extend silk 2, silk 2 will be extended and be set as beyond the length of main 1 side of supporting body
At least more than the width of main supporting body 1.
As shown in Figure 1, extend silk 2 bend when, bending part main 1 two sides of supporting body be symmetrical arranged or mirror settings,
Symmetrical centre or mirrored center are main supporting body 1.
As shown in Figure 1, due to being additionally provided with water blocking layer 4 on main the supporting body 1 wherein conductive layer 3 of one side, so main supporting body 1
Two sides can be considered one side and be equipped with one layer of coating, another side is equipped with two layers of coatings, therefore extends silk 2 and divide at least two groups,
In the length of one group of extension silk 2 be at least twice of width of main supporting body 1, so that one group of shorter extension silk 2 is fitted in
Signal layer coating one side, longer one group of extension silk 2 are fitted in two layers of coatings one side.Longer one group of extension silk 2 is close to main carrying
One section of body 1 is embedded in conductive layer 3, in one section of embedment water blocking layer 4 of main supporting body 1.It, first will be longer by one when brushing
Group extends silk 2 and bends to fitting substrate one side, scratches a layer sizing；It will extend after silk 2 is bent again and exceed main 1 edge of supporting body
The reversed bending in part scratches another layer sizing.
In order to improve the bonding strength for the junction for extending silk 2 and main supporting body 1, extending between silk 2 and main supporting body 1
Equipped with the fusion point 5 for improving bonding strength between the two.
The above embodiments are only the explanation to the utility model, are not limitations of the present invention, ability
Field technique personnel can according to need the modification that not creative contribution is made to the present embodiment after reading this specification, but
As long as all by the protection of Patent Law in the scope of the claims of the utility model.
Claims (7)
- The binding strap solid coated structure 1. a kind of semiconductive blocks water, including main supporting body (1), it is characterized in that: the main supporting body (1) two sides, which are equipped with, extends silk (2), and the described length of silk (2) beyond main supporting body (1) side that extends is at least more than main supporting body (1) width, the extension silk (2) bend to face where main supporting body (1), and the bending part for extending silk (2) is held in master Carrier (1) two sides is symmetrical arranged or mirror settings, and symmetrical centre or mirrored center are main supporting body (1).
- The binding strap solid coated structure 2. semiconductive according to claim 1 blocks water, it is characterized in that: the extension silk (2) It is set as wave silk, the waveform bending profile normal of the wave silk is in main supporting body (1).
- The binding strap solid coated structure 3. semiconductive according to claim 1 blocks water, it is characterized in that: the main supporting body (1) two sides is painted with conductive layer (3), and the diameter for extending silk (2) bending part is less than the thickness of conductive layer (3).
- The binding strap solid coated structure 4. semiconductive according to claim 1 blocks water, it is characterized in that: the extension silk (2) It is divided at least two groups, wherein the length of one group of extension silk (2) is at least twice of the width of main supporting body (1).
- The binding strap solid coated structure 5. semiconductive according to claim 4 blocks water, it is characterized in that: the main supporting body (1) it is wherein additionally provided with water blocking layer (4) on the conductive layer (3) of one side, longer one group of extension silk (2) is close to main supporting body (1) One section is embedded in conductive layer (3), in one section of embedment water blocking layer (4) of main supporting body (1).
- The binding strap solid coated structure 6. semiconductive according to claim 5 blocks water, it is characterized in that: extending silk (2) bending Setting, the part beyond main supporting body (1) edge reversely bends setting after extension silk (2) bending.
- The binding strap solid coated structure 7. semiconductive according to claim 1 blocks water, it is characterized in that: the extension silk (2) The fusion point (5) for improving bonding strength between the two is equipped with the junction of main supporting body (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820974303.7U CN208570182U (en) | 2018-06-21 | 2018-06-21 | Semiconductive blocks water binding strap solid coated structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820974303.7U CN208570182U (en) | 2018-06-21 | 2018-06-21 | Semiconductive blocks water binding strap solid coated structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208570182U true CN208570182U (en) | 2019-03-01 |
Family
ID=65488712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820974303.7U Expired - Fee Related CN208570182U (en) | 2018-06-21 | 2018-06-21 | Semiconductive blocks water binding strap solid coated structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208570182U (en) |
-
2018
- 2018-06-21 CN CN201820974303.7U patent/CN208570182U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190301 |