CN208521918U - Power semiconductor modular - Google Patents
Power semiconductor modular Download PDFInfo
- Publication number
- CN208521918U CN208521918U CN201821227794.5U CN201821227794U CN208521918U CN 208521918 U CN208521918 U CN 208521918U CN 201821227794 U CN201821227794 U CN 201821227794U CN 208521918 U CN208521918 U CN 208521918U
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- substrate
- pressure
- power semiconductor
- semiconductor modular
- opposite bearing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
Abstract
Propose a kind of power semiconductor modular, it is formed to have substrate, shell and the switching device surrounded by the shell arrangement are on the substrate, wherein the switching device has substrate and attachment device, the attachment device has the first and second main regions, wherein power semiconductor assembly is arranged in the conductive traces of the substrate, and has pressure apparatus, and the pressure apparatus is formed to move in the normal direction of substrate；There is the pressure apparatus pressure body and pressure to introduce body, wherein pressure elements by from pressure body it is outstanding in a manner of arrange, wherein pressure elements is pressed on the part of the second main region of attachment device, described to be partially disposed in the view field along the normal direction of substrate of power semiconductor assembly；And wherein at least two clamp devices that pressure is introduced into opposite bearing of the body by means of being bonded on the substrate are supported on substrate, and wherein the geometric center point of the opposite bearing and substrate arrangement is point-blank.
Description
Technical field
The utility model describes a kind of power semiconductor modular, which includes at least one, preferably
At least three switching devices, wherein pressure is applied to accordingly by pressure apparatus on the orientation substrate of power semiconductor modular
On switching device.
Background technique
From power semiconductor modular known in the art and including its device, such as such as DE 10 2,014 106 570
As disclosed in A1.Power semiconductor modular is formed with: shell；Switching device including being connected to the substrate of shell；Cloth
Set power semiconductor assembly on the substrate；Attachment device；Load connecting device；And pressure apparatus, the pressure apparatus
It is formed to mobile relative to shell.In this case, there is substrate the first central passage to be open and from being electrically insulated from each other
Conductive traces, wherein power semiconductor assembly is arranged in conductive traces.In this case, attachment device has the first master
Region and the second main region and it is formed to have conductive film.Pressure apparatus also has pressure body, which has and first
The second channel of channel alignment is open and has the first recess portion, and pressure elements is arranged to protrude from first recess portion, wherein pressing
Power element be pressed in a part of the second main region of attachment device and in this case, the part along substrate method
Line direction is arranged in the region of power semiconductor assembly.In this case, first passage opening and second channel opening shape
As clamp device is received, which is fastened to cooling for the power semiconductor modular in the arrangement in a manner of force-fitting
Device.Disadvantage of this is that substrates to be open with centre gangway, and which hinders the cost-effective productions of substrate.
Utility model content
In the case where understanding the situation, the purpose of this utility model is to provide a kind of power semiconductor modular, institutes
Stating power semiconductor modular includes substrate and including at least one switching device and acting on the pressure on the switching device
Device, wherein introducing pressure in a simple and effective way.
The purpose is realized according to the utility model by power semiconductor modular as described below.
Power semiconductor modular according to the present utility model is formed with substrate, is disposed with shell on the substrate and by institute
The switching device of shell encirclement is stated, wherein the switching device has substrate and attachment device, the attachment device has first
Main region and the second main region, and wherein power semiconductor assembly is arranged in the conductive traces of the substrate, and is had
It is formed to the pressure apparatus moved in the normal direction of the substrate, there is the pressure apparatus pressure body and pressure to draw
Enter body, wherein pressure elements by from pressure body it is outstanding in a manner of arrange, wherein pressure elements is pressed in the second primary area of attachment device
In a part in domain, and in this case, the power semiconductor assembly that is partially disposed on is along substrate normal direction
In view field, and wherein pressure introducing body is supported on substrate by means of at least two clamp devices, the clamp device
Be bonded in the opposite bearing of substrate, and wherein opposite bearing, more specifically with respect to the respective center of bearing, and
The geometric center point arrangement of substrate is point-blank.
In a preferred configuration, power semiconductor modular has at least three substrates, and at least three substrate is with them
The mode that is located in a straight line of geometric center point continuously arrange.
When each substrate is associated with individual pressure introducing body, it may be possible to advantageous.However, working as all substrates together
When same pressure introducing body is associated, it is also possible to preferred.
It is particularly preferred that corresponding substrate be rectangular in form and opposite bearing be arranged adjacent to it is diagonally to each other right
The corner region set, and preferably with corner region arrangement point-blank or opposite bearing is arranged to lean on
Nearly opposite two sides, and preferably arranged point-blank with the respective center of side point.So in this case,
Central point itself can also be only virtual, that is to say, that be not arranged at substrate sheet.
Corresponding substrate preferably has the recess close to one of opposite bearing, is suitable for clamp device especially for being formed
Space.
Certainly, in power semiconductor modular according to the present utility model, the function that especially refers in the singular respectively
Rate semiconductor subassembly and pressure elements can plural number exist, unless above-mentioned be explicitly excluded or be excluded in itself or practical with this
Novel concept is inconsistent.
Self-evidently, the different configurations of the utility model can be realized individually or with any desired combination with reality
It now improves, but regardless of the configuration, whether combination pressure transmitting device or combination pressure sintering method are mentioned.Specifically, not
In the case where being detached from the scope of the utility model, the combination that the feature mentioned and explained above and below not only can be shown makes
With, and other can combine or pass through its own and use.
Detailed description of the invention
According to the description of the exemplary embodiment below to Fig. 1 the utility model schematically shown into Fig. 6 or from its
The description of various pieces, being explained further of the utility model, advantageous details and is characterized in obvious.
Fig. 1 shows the side view of the first configuration of power semiconductor modular according to the present utility model.
Fig. 2 to Fig. 6 shows the plan view of the various configurations of power semiconductor modular according to the present utility model.
Specific embodiment
Fig. 1 shows the lateral cross-sectional views of the first configuration of power semiconductor modular 1 according to the present utility model, the power
Semiconductor module 1 includes substrate 4 and the switching device 10 including being arranged on substrate 4.This is illustrated as circuit device 10
A part substrate 2, which is conventionally formed in principle in the art, and including body of dielectric material 20
With the conductive traces 22 for being disposed thereon and being electrically insulated from each other, the conductive traces have different potentials during operation,
Especially the load potential of switching device especially switchs and measures potential but it is also possible to be the auxiliary potential of switching device.?
Three conductive traces 22 of the load potential with such as typical half-bridge topology have been shown in particular in this.
Power semiconductor assembly 26 (more particularly power switch in this case) is disposed in two conductive traces
On each of 22, the power switch with it is in the art be conventionally formed for MOSFET or be formed as include it is reversed simultaneously
Join the IGBT of the power diode of connection.Power switch preferably passes through sintering connection and conductor mark in a manner of routine in the art
Line 22 is conductively connected.
The inside connection of switching device 10 is formed by attachment device 3, and attachment device 3 is by film conventional in the prior art
Compound or pellicular cascade are formed, and are made of the first conductive film 30, electric insulating film 34 and the second conductive film 32.It is described
Attachment device 3 is especially corresponding 26 (more specifically its contact on the side away from substrate 2 of power semiconductor assembly
Face) it is connected to the conductive traces 22 of substrate 2.In a preferred configuration, the conductive traces part of attachment device 3 passes through sintering connection
Contact surface is connected in such a way that material combines.Certainly, between power semiconductor assembly 26 between the conductive traces 22 of substrate 2
Connection can also in an identical manner and at the same time formed.The surface (surface is towards substrate 2) of first conductive film 30 is in this shape
At the first main region 300, and the apparent surface of the second conductive film 32 forms the second main region 320.
The power semiconductor modular being not explicitly shown herein has the load and auxiliary connection for external electrical connections purpose
Element.
In addition, power semiconductor modular 1 has shell 6, which is connect with substrate 2 using adhesive connection and can
To be single-piece or multi-piece type, wherein a part of of shell can form frame, which is covered by another part.In Fig. 1
The frame-like part of the shell is shown.Shell 6 is arranged on substrate 4 and surrounds switching device 10 and pressure apparatus 5, pressure
Power device 5 can move on the normal direction N of substrate and be formed as applying pressure to switching device 10.
Pressure apparatus 5 has pressure body 50 and multiple pressure elements 52, shows two such pressure elements in figure.Pressure
Power body 50, which has, is especially rigid form, so as to which it is first that the pressure for being introduced into thereon is transmitted to pressure in an uniform manner
Part 52.For this purpose and under the thermic load background during the operation of power semiconductor modular 1, pressure body 50 is by high temperature heat-resistant
Thermoplastic plastic, particularly polyphenylene sulfide are constituted.Pressure elements 52 allows for applying substantially invariable pressure during operation, and
And in this case especially at different temperature.For this purpose, pressure elements 52 is by silicon rubber, particularly so-called liquid
Body silicone resin is constituted.In principle, as known in the art, all modifications of pressure apparatus 5 can be provided here.
In addition, there is pressure apparatus 5 pressure to introduce body 54, be formed as spring clip, preferably metal holder.Institute
It states pressure introducing body 54 to be supported on substrate 4 by means of two clamp devices 7, the clamp device 7 is bonded on the opposite of substrate 4
In bearing 40, and medially apply pressure on pressure body 50.For this purpose, in the configuration, although not necessarily, pressure
Power introduces body 54 in its corresponding end sections 540,542 against the frame-like part of shell 6.Be formed as the clamp device of screw
7 pass through corresponding end sections 540,542 in each case and also extend through the protrusion of shell 6.The screw 7, which is joined to, to be equipped with
In the recess portion 40 of the substrate 4 of internal screw thread, wherein the recess portion forms opposite bearing 40.
By the way that end sections 540,542 are screwed on substrate 4, pressure introduces body 54 with the center portion thereof point 544 in pressure body
Pressure is medially generated on 50, which arranges in normal orientation with the geometric center point 200 of substrate 2 with flushing, ginseng
According to Fig. 2.Such as it is located in a straight line also referring to Fig. 2, the center of opposite bearing 40 and the geometric center point 200 of substrate 2.
The pressure that pressure introduces body 54 is introduced into the second master of attachment device 3 by means of pressure body 50 and pressure elements 52
On the part 322 in region 320.The introducing carries out on the part 322 of the second main region 320, normal of the part along substrate 2
Direction N is arranged in the view field 260 of power semiconductor assembly 26.Therefore pressure is passed, and thus substrate 2 is with especially effectively
Mode be forced at the position of power semiconductor assembly 26 on substrate 4.In this way, heat is from corresponding power half
Conductor assembly is particularly effectively transmitted to substrate for cooling and further radiate.
Fig. 2 to Fig. 6 shows the plan view of the various configurations of power semiconductor modular 1 according to the present utility model, does not have
It is explicitly illustrated shell and attachment device.In each case, the substrate 4 of power semiconductor modular 1 is shown, the power semiconductor mould
Block 1 includes three switching devices 10 of arranged in series, and a part of the switching device 10 is made of corresponding substrate 2, is such as referred to
Corresponding substrate 2 is formed as described in Fig. 1.The attachment device being not explicitly shown also is formed like that described with reference to Figure 1.
Three concatenated substrates 2 are shown respectively in Fig. 2 and Fig. 3, wherein the opposite bearing 40 of substrate 4 be respectively arranged for substrate
The opposite side 206 of two of 2,208 is adjacent and be arranged at the corresponding central point 216 of side 206,208 there.
In order to especially save space-efficient arrangement, substrate 2 is also respectively provided with the recess 24 according to Fig. 3.Therefore, side 206,
208 respective center point 216 is virtual central point, because it is not located at substrate 2.
The geometric center point 200 of respective substrates 2 with the associated opposite bearing of the substrate 2 40 (more specifically with its
Center is associated) it is in a straight line.
It is associated that each substrate 2 introduces body 54 with pressure in each case, wherein distinguishing only cloth between two substrates 2
An opposite bearing 40 is set, one opposite bearing is therefore associated with two adjacent substrates 2.In principle, three
Pressure introduce body 54 (one of them is only shown) can also degeneracy be single pressure body, then it is associated with all three substrates 2.
Fig. 4 to fig. 6 in each case again three concatenated substrates 2 are shown, wherein the opposite bearing 40 of substrate 4 respectively with
Mutual opposite two corner regions 202,204 of substrate 2 are adjacently positioned, or in the case where Fig. 5 and Fig. 6, the phase of substrate 4
Bearing 40 is adjacently positioned with mutual opposite all four corner regions 202,204 of substrate 2 respectively.In order to especially save sky
Between arrangement, corresponding substrate 2 in each case have recess 24, this is favourable in principle but is not required.
The geometric center point 200 of respective substrates 2 with the associated opposite bearing of the substrate 2 (more accurately with its center)
40 are in a straight line.
In the embodiment according to Fig. 4, each substrate 2 in each case with the pressure that is supported on two opposite bearings 40
It is associated that power introduces body 54.
In the embodiment according to Fig. 5, each substrate 2 is associated with pressure introducing body 54 in each case, the pressure
It introduces body 54 to be supported on four opposite bearings 40, wherein the opposite bearing 40 between substrate 2 is associated in each case
Twice, that is to say, that associated with two adjacent substrates 2 in each case.
In the embodiment according to Fig. 6, all substrates 2 are jointly associated with single pressure introducing body 54, which introduces
Body 54 is supported in each case on four opposite bearings 40, and wherein the opposite bearing 40 between substrate 2 is also in every
It is only associated with twice in the case of kind.
Claims (11)
1. power semiconductor modular, it is characterised in that: shell (6) and the switching device that is surrounded by the shell including substrate (4)
(10) it is arranged on the substrate (4), wherein the switching device (10) has substrate (2) and attachment device (3), the connection
Device (3) has the first and second main regions (300,320), and wherein power semiconductor assembly (26) is arranged in the substrate (2)
Conductive traces (22) on, and including pressure apparatus (5), the pressure apparatus (5) is formed to the normal in substrate (2)
It is moved on direction (N)；
There are the pressure apparatus pressure body (50) and pressure to introduce body (54), and wherein pressure elements (52) is with prominent from pressure body
Mode arrange that wherein pressure elements (52) is pressed on the part (322) of the second main region (320) of attachment device (3), and
In this case, the part (322) is disposed in the method along the substrate (2) of the power semiconductor assembly (26)
In the view field (260) in line direction (N)；And
What wherein the pressure was introduced into opposite bearing (40) of the body (54) by means of being bonded on the substrate (4) is at least two tight
It is fixedly mounted with and sets (7) support on the substrate, and the wherein geometric center point of the opposite bearing (40) and the substrate (2)
(200) it is arranged on straight line (8).
2. power semiconductor modular according to claim 1, it is characterised in that:
At least three substrates (2) are continuously arranged in such a way that their geometric center point (200) is located in a straight line.
3. power semiconductor modular according to claim 2, it is characterised in that:
Each substrate (2) is associated with individual pressure introducing body (54).
4. power semiconductor modular according to claim 2, it is characterised in that:
All substrates (2) are associated with common pressure introducing body (54).
5. the power semiconductor modular according to one of preceding claims, it is characterised in that:
Each substrate (2) have rectangular in form, and opposite bearing (40) be arranged in proximity to it is diagonally to each other opposed
Corner region (202,204) or opposite bearing (40) are arranged to adjacent with opposite side (206,208).
6. power semiconductor modular according to claim 5, it is characterised in that:
Opposite bearing (40) is arranged in proximity to opposed corner region (202,204) diagonally to each other and turns with described
Angular zone (202,204) is arranged point-blank.
7. power semiconductor modular according to claim 5, it is characterised in that:
Opposite bearing (40) be arranged to it is adjacent with opposite side (206,208) and be arranged as with the side (206,
208) each central point (216) arrangement is point-blank.
8. the power semiconductor modular according to any one of preceding claims 1-4, it is characterised in that:
Each substrate (2) has the recess (24) close to one of opposite bearing (40).
9. the power semiconductor modular according to any one of preceding claims 1-4, it is characterised in that:
Attachment device (3) be formed as include at least one conductive film He at least one electrical insulating film (30,32,34) film lamination.
10. the power semiconductor modular according to any one of preceding claims 1-4, it is characterised in that:
Pressure body (50) is high-temperature-resistant thermoplastic plastic components, and pressure elements (52) is silastic member.
11. according to power semiconductor modular described in preceding claims 10, it is characterised in that:
Pressure body (50) is polyphenylene sulfide element, and pressure elements (52) is liquid silastic element.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102017117667.5 | 2017-08-03 | ||
| DE102017117667.5A DE102017117667B4 (en) | 2017-08-03 | 2017-08-03 | Power semiconductor module with a pressure device acting on a switching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208521918U true CN208521918U (en) | 2019-02-19 |
Family
ID=65020075
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810861582.0A Pending CN109390291A (en) | 2017-08-03 | 2018-08-01 | Power semiconductor modular including the pressure apparatus acted on switching device |
| CN201821227794.5U Active CN208521918U (en) | 2017-08-03 | 2018-08-01 | Power semiconductor modular |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810861582.0A Pending CN109390291A (en) | 2017-08-03 | 2018-08-01 | Power semiconductor modular including the pressure apparatus acted on switching device |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN109390291A (en) |
| DE (1) | DE102017117667B4 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102022129449A1 (en) | 2022-11-08 | 2024-05-08 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module with a pressure device acting on a switching device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0213A (en) | 1987-10-13 | 1990-01-05 | Hitachi Chem Co Ltd | Composition for forming protective film for transparent electrode of liquid crystal display element |
| JPH09138A (en) | 1995-06-15 | 1997-01-07 | Nippon Petrochem Co Ltd | Tool for protection against animal damage |
| JP5500718B2 (en) * | 2010-03-05 | 2014-05-21 | 株式会社ケーヒン | Semiconductor device |
| JP5751273B2 (en) * | 2013-04-02 | 2015-07-22 | トヨタ自動車株式会社 | Semiconductor device |
| DE102013104949B3 (en) * | 2013-05-14 | 2014-04-24 | Semikron Elektronik Gmbh & Co. Kg | Power electronic switching device and arrangement hereby |
| DE102014106570B4 (en) | 2014-05-09 | 2016-03-31 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module with switching device and arrangement hereby |
-
2017
- 2017-08-03 DE DE102017117667.5A patent/DE102017117667B4/en active Active
-
2018
- 2018-08-01 CN CN201810861582.0A patent/CN109390291A/en active Pending
- 2018-08-01 CN CN201821227794.5U patent/CN208521918U/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109390291A (en) | 2019-02-26 |
| DE102017117667A1 (en) | 2019-02-07 |
| DE102017117667B4 (en) | 2021-11-18 |
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