CN208507468U - A kind of half T-type security grid computing film of DC filter capacitors - Google Patents

Abstract

The utility model provides a kind of half T-type security grid computing film of DC filter capacitors, including dielectric layer, the metal area being set on dielectric layer, stay border area and fuse structure, fuse structure is set on metal area close to staying border area, fuse structure includes radial fuse and lateral fuse, the radial direction fuse and lateral fuse form long T-type fuse structure and short T-type fuse structure, multiple lateral fuses are additionally provided between border area in the short T fuse structure and staying, when the electric weak point breakdown of common metal film, especially large value capacitor, at this moment breakdown current is very big, often the multilayer dielectricity neighbouring with self-healing point is burnt breakdown in self-healing procedure, cause capacitor short-circuit.However the reaction of the microfuze of metal metallized safety film is very sensitive, self-healing is reliable, has very highly sensitive self-healing when passing through high current and is effectively isolated self-healing breakdown part, avoids influencing other parts, guarantee the internal security of entire dry type explosion-prevention capacitor.

Description

A kind of half T-type security grid computing film of DC filter capacitors

Technical field

The utility model relates to a kind of half T-type security grid computing films of DC filter capacitors.

Background technique

With quickly propelling for new-energy automobile industry, national development planning is expressly recited the product given priority to and skill Art, comprising: meet the novel miniaturization of complete electronic set growth requirement of new generation, integrated, highly reliable electronic element products；Meet The high quality of the mating demand of China's novel traffic equipment manufacture industry, key electronic component.With the lasting propulsion of miniaturization, directly Stream filter capacitor needs to reach thin-film capacitor power density >=0.2A/uF, could be same using the capacitor of half T-type security grid computing film When compatible with capacitance voltage field strength is high, electric current is big small form factor requirements.

Utility model content

In order to overcome the shortcoming in the prior art, a kind of half T-type security grid computing film of capacitor is designed, is solved Existing metallized film noinductive capacitor equivalent series resistance is bigger than normal, and loss is big, through-flow weak, the short problem of service life, and adopts It, can be with the mechanical compression noinductive capacitor of alternative structure complexity with the capacitor of the safety diaphragm；The utility model is using following Scheme:

A kind of half T-type security grid computing film of DC filter capacitors, including dielectric layer, the metal being set on dielectric layer Border area and fuse structure stay in area, and the fuse structure is set on metal area close to staying border area, the fuse structure Including radial fuse and lateral fuse, the radial direction fuse and lateral fuse form long T-type fuse structure and short T Type fuse structure is additionally provided with multiple lateral fuses in the short T fuse structure and staying between border area.

In one or more embodiments, the lateral fuse and short T-type fuse structure of the long T-type fuse structure The position of lateral fuse be staggered.

In one or more embodiments, the lateral fuse of short T-type fuse structure and the close lateral guarantor for staying border area The position of dangerous silk is corresponding.

In one or more embodiments, the metal layer area includes thickened area and non-thickened area, the fuse structure On the non-thickened area.

In one or more embodiments, the width of the thickened area is 1.5mm-2.0mm.

In one or more embodiments, the transverse direction fuse and horizontal sextant angle are less than 90 degree.

The utility model has the advantages that when the electric weak point breakdown of common metal film, especially large value capacitor, at this moment breakdown current is very It greatly and not can control, often the multilayer dielectricity neighbouring with self-healing point burnt breakdown in self-healing procedure, causes capacitor short Road failure.However the reaction of the microfuze of metal metallized safety film is very sensitive, self-healing is reliable, has when passing through high current very high Sensitivity self-healing and be effectively isolated self-healing breakdown part, avoid influence other parts.It ensure that entire dry type explosion-prevention capacitor Internal security quality.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of half T-type security grid computing film of the utility model embodiment DC filter capacitors.

Fig. 2 is another structural schematic diagram of half T-type security grid computing film of the utility model embodiment DC filter capacitors.

Specific embodiment

As follows in conjunction with attached drawing, application scheme is further described:

Embodiment:

Referring to attached drawing 1-2, the present embodiment provides a kind of half T-type security grid computing films of DC filter capacitors, including medium Layer 1, stays border area 3 and fuse structure 4 at the metal area 2 being set on dielectric layer 1, and the fuse structure 4 is set to metal Close to border area 3 is stayed in area 2, the fuse structure 4 includes radial fuse 41 and lateral fuse 42, the radial direction fuse 41 form long T-type fuse structure and short T-type fuse structure with lateral fuse 42, in the short T fuse structure and stay Multiple lateral fuses 42 are additionally provided between border area 3.

Further, the lateral insurance of the lateral fuse 42 of the long T-type fuse structure and short T-type fuse structure The position of silk 42 is staggered.

Further, the position of the lateral fuse 42 of short T-type fuse structure and the close lateral fuse 42 for staying border area 3 Set correspondence.

Further, the metal layer area 2 includes thickened area 21 and non-thickened area 22, and the fuse structure 4 is located at institute It states on non-thickened area 22.

Further, the width of the thickened area 21 is 1.5mm-2.0mm.

Further, the lateral fuse 42 and horizontal sextant angle are less than 90 degree.

Specifically:

A kind of half T-type rupture pressure disc of capacitor of the utility model patent, by dielectric layer 1, metal layer area 2, stay border area 3 and Fuse structure 4 forms, such as attached drawing 1, in which:

The dielectric layer 1 of the half T-type rupture pressure disc, thickness t, by voltage is used, according to the field strength setting one that can be resistant to Fixed number value, and do single side corona roughening treatment.

The metal layer area 2 of the half T-type rupture pressure disc is uniformly adhered and is being situated between by vacuum evaporation process using zinc and aluminium On the roughening face of matter layer, and pass through the resistance value transition of gradual change therebetween, avoiding the transition of resistance value from being deteriorated causes its field strength to distort.

The non-thickened area 22 in the metal layer area 2 of the half T-type rupture pressure disc, matches a set of fuse structure, wherein radial to protect Dangerous 41 width 0.25mm of silk, is vertical structure, and lateral 42 width 0.2mm of fuse is in 89 ° of angles with horizontal direction.Every 10mm Two radial fuses 41 are set, passage section are improved, to reduce loss.Reserved 1.5mm~2.0mm connects with gilding layer The thickened area 22 refuted can form sufficiently large contact surface when with noninductive metal spraying process matching, to reduce loss, improve and produce Product through-current capability.The setting of fuse, makes capacitor in weak point breakdown, the metal spacing of 0.15~0.25mm, can be rapid Fusing forms open circuit, so that isolated fault box structure and other box structures without weakness, ensure the operation that capacitor continues, But minimum capacity is lost, and loss not will increase, the half T-type rupture pressure disc stays border area 4, width 2mm, as the two poles of the earth Between insulation distance.

The circuit diagram of the security grid computing of the metalization layer of the half T-type rupture pressure disc is as shown in Fig. 2, common having It under the premise of metalized film " self-healing " performance, is designed by the special construction for the pole plate that metallizes, reaches capacitor safe protection Effect, therefore capacitor itself needs high pressure resistant, so security grid computing needs multisection type to divide, multilevel splitting carries out energy The decomposition of concentration avoids product in the self-healing procedure of big energy, the excessive effective use for influencing other segmented capacitives of energy, All the design are handled using 2 stage, half T-type structure, to guarantee the high voltage requirement of product.

Existing security grid computing uses the fuse of 0.25mm, because capacitance current is linear reduction, rear end fuse mistake 0.2mm is spent, the width of main fuse mainly influences the size and resistance to overcurrent capability of capacitor voltage endurance capability, returns from theory Road calculates the fuse of capacitor about between 0.15~0.3mm, product durable reliability by certain comparison it is long-term Verifying, the excessive self-healing of the product of fuse 0.15mm, the unbearable corresponding self-healing energy of fuse, advancement.It is higher than The product self-healing energy of 0.25mm fuse is excessive, product breakdown failure.Through composite score, the fuse of this patent is scheduled 0.25 (- 0.05~+0) mm.

It is that above-mentioned preferred embodiment should be regarded as application scheme embodiment for example, all with application scheme thunder Same, approximate or technology deduction, replacement, improvement for making based on this etc., are regarded as the protection scope of this patent.

Claims (6)

1. a kind of half T-type security grid computing film of DC filter capacitors, which is characterized in that including dielectric layer, be set to dielectric layer On metal area, stay border area and fuse structure, the fuse structure is set on metal area close to staying border area, the guarantor Dangerous silk structure includes radial fuse and lateral fuse, and the radial direction fuse and lateral fuse form long T-type fuse Structure and short T-type fuse structure are additionally provided with multiple laterally insurances in the short T-type fuse structure and staying between border area Silk.

2. half T-type security grid computing film of DC filter capacitors according to claim 1, which is characterized in that the long T-type The position of the lateral fuse of the lateral fuse of fuse structure and short T-type fuse structure is staggered.

3. half T-type security grid computing film of DC filter capacitors according to claim 2, which is characterized in that short T-type insurance The position of the lateral fuse of silk structure and the close lateral fuse for staying border area is corresponding.

4. half T-type security grid computing film of DC filter capacitors according to claim 1, which is characterized in that the metal Area includes thickened area and non-thickened area, and the fuse structure is located on the non-thickened area.

5. half T-type security grid computing film of DC filter capacitors according to claim 4, which is characterized in that the thickening The width in area is 1.5mm-2.0mm.

6. half T-type security grid computing film of DC filter capacitors according to claim 1, which is characterized in that the transverse direction Fuse and horizontal sextant angle are less than 90 degree.