CN208478288U - Substrate board treatment - Google Patents
Substrate board treatment Download PDFInfo
- Publication number
- CN208478288U CN208478288U CN201820548460.1U CN201820548460U CN208478288U CN 208478288 U CN208478288 U CN 208478288U CN 201820548460 U CN201820548460 U CN 201820548460U CN 208478288 U CN208478288 U CN 208478288U
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- Prior art keywords
- substrate
- cleaning solution
- board treatment
- substrate board
- fluid
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- 239000000758 substrate Substances 0.000 title claims abstract description 163
- 238000011282 treatment Methods 0.000 title claims abstract description 40
- 238000004140 cleaning Methods 0.000 claims abstract description 63
- 238000001035 drying Methods 0.000 claims abstract description 29
- 238000005286 illumination Methods 0.000 claims abstract description 24
- 239000000243 solution Substances 0.000 claims description 53
- 239000012530 fluid Substances 0.000 claims description 52
- 238000002347 injection Methods 0.000 claims description 31
- 239000007924 injection Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 9
- 239000007921 spray Substances 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000003672 processing method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000004040 coloring Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The purpose of this utility model is to provide a kind of substrate board treatments, it is in the drying process for the substrate that cleaning solution is ejected on substrate, the temperature for the cleaning solution for be ejected into substrate using light increases, and so as to improve rate of drying, and prevents pattern from tilting.The utility model for realizing the purpose includes: cleaning solution supply part, supplies cleaning solution；Cleaning solution ejection section is connected to the cleaning solution supply part, and the cleaning solution is ejected on the substrate；Light is radiated at the cleaning solution being distributed on the substrate by illumination part.
Description
Technical field
The utility model relates to a kind of substrate board treatments, in more detail, are related to a kind of substrate board treatment, in benefit
With cleaning solution handle substrate during by irradiation light come so that the temperature moment of cleaning solution increase so that substrate is quick
It is dry, and prevent pattern from tilting.
Background technique
In general, executing photoetching (l ithography), vapor deposition and etching repeatedly to manufacture semiconductor element
(etching) the kinds of processes such as.By during the technique, remaining has on substrate (for example, chip of silicon materials)
Grain, metal impurities, organic matter etc..The polluter causes adverse effect to the yield and reliability of product, therefore is partly leading
In body manufacturing process, execute the cleaning process removed polluter from substrate using medical fluid, and with deionized water (DI) into
After row flushing processing, by drying process.Pattern inclination (Pattern leaning) phenomenon may occur in the drying process,
Pattern tilt phenomenon is following technique bad phenomenon: because of the suction between laplace pressure (Laplace Pressure) and pattern
The reason of attached power (Adhesive Energy) and generate attachment beam (bridge) between the patterns, thus pattern tilt, La Pula
This pressure be because irregularly building up the surface tension of liquid between the patterns caused by.(referring to Fig.1) recently, with
The design criteria (design rule) of semiconductor element is persistently reduced, pattern while being mainly main with fine structure pattern
Aspect ratio (Aspect Ratio) sharply increases, to improve to the concern for solving the inclined method of pattern.
As currently known drying mode, there are rotation (Spin) mode and N2Drying mode etc., rotation mode makes
It obtains substrate to rotate and dry with 1500~2500RPM, N2Drying mode is to supply indifferent gas to substrate surface while rotating
Body nitrogen (N2) and make the drying substrates, but recently, sparged isopropanol (IPA:iso-propyl while rotation
) and N alcohol2Dry (Rotagoni dry) mode of Rotagoni just attract attention.Rotagoni mode is such as lower section
Method: N is sprayed while providing IPA with liquid or gaseous state2, to pass through marangoni effect (Marangoni Effect)
Remove the moisture of substrate.The principle of marangoni effect is as follows: a solution region, there are two kinds of different surfaces tension zones
In the case where, the solution region big from the small field flow orientation surface tension of surface tension.Pass through the IPA being ejected on substrate and punching
It washes after technique the surface differential for remaining in the pure water (DI) of substrate surface and generates marangoni effect, the surface of DI
Power is lower, and is blown into N2While carry out substrate drying.
Fig. 2 outlined the structure for being applicable in the existing substrate board treatment of the method.
The substrate board treatment includes: cleaning solution supply part (not shown), supplies cleaning solution；Cleaning solution ejection section
130, it is connected with cleaning solution supply part (not shown), cleaning solution is ejected on substrate W；Fluid supply unit (not shown),
It supplies fluid；Fluid injection portion 150 is connected with fluid supply unit (not shown), sprays a fluid on substrate W.With
It can be IPA in the cleaning solution of the substrate board treatment, the fluid can be N2。
It is realized using the substrate processing method using same of the substrate board treatment by carrying out following process simultaneously: so that described
Substrate W rotation；So that the cleaning solution ejection section 130 operates and the cleaning solution is ejected on the substrate W；So that described
Fluid injection portion 150 operates and sprays fluid, and the substrate W is dried by fluid.
For the pattern tilt phenomenon occurred by the substrate board treatment and substrate processing method using same, it can pass through
It improves the rate of drying of substrate and completes drying process before pattern inclination occurs to prevent.As for improving rate of drying
Method, it is representative be manufacture hot environment method.It, may be just like lower section as the existing method of manufacture hot environment
Method: heating cleaning solution supply part by heating bath (bath), so that temperature increases；In addition, sharp during the rinsing process
With high temperature DI come so that the temperature of substrate itself increases；Spray high temperature fluid；So that heater is operated in chamber interior, to make
Obtain the temperature raising etc. of entire chamber interior.The problem of the method is, cleaning solution after cleaning solution supply part is heated to
Cleaning solution ejection section is mobile and is sprayed, and is difficult to continue to keep temperature；The device of substrate and cleaning solution supply part etc. may be because of height
Temperature and deteriorate；Need heating time and it should be noted that temperature management；Lead to equipment enlarging etc. because of heating equipment, so truth
For exploring from many aspects significantly more efficient prevents the inclined method of pattern.
As the technology for indicating the existing substrate board treatment, KR published patent 10-2015- is disclosed
No. 0120506.
Utility model content
The utility model is proposed to solve all problems, it is intended that in the drying for carrying out substrate
When technique, light is radiated on cleaning solution while spraying the cleaning solution of liquid condition to the substrate of rotation, so that cleaning
The temperature moment of liquid increases, so that substrate rapid draing, and prevent pattern from tilting.
Furthermore, it is therefore intended that, medical fluid is sprayed, the cleaning solution steam of evaporation is blown to outside substrate, to improve the dry of substrate
Dry speed, and prevent pattern from tilting.
Furthermore, it is therefore intended that, it is provided with vacuum plant, the cleaning solution steam of evaporation is sucked into vacuum plant, to mention
The rate of drying of high substrate, and prevent pattern from tilting.
Furthermore, it is therefore intended that, in the drying process using laser beam and IPA, so that the temperature of laser beam is less than IPA's
425 DEG C of burning point, to prevent IPA from burning because of the laser beam of high temperature.
Furthermore, it is therefore intended that, in the drying process using laser beam, so that the wavelength of laser beam is 300 μm to 1200
μm, it is preferable that it is 900 μm, laser beam is quickly absorbed by IPA, so that minimum influence only is generated to substrate while temperature increases,
So as to prevent substrate damage.
Furthermore, it is therefore intended that, in the drying process using laser beam, it is provided with coloring window (Colored Window),
To prevent the accident that may occur due to the reflection of laser beam.
In order to realize the purpose, the substrate board treatment according to the present utility model using laser may include: cleaning
Liquid ejection section, to substrate jet cleaning liquid；Light is radiated at the table for being injected with the substrate of the cleaning solution by illumination part
Face.
The substrate board treatment can also include: fluid injection portion, be connected to fluid supply unit, spray a fluid into
On the substrate.
The illumination part is set on fixture (JIG), and fixture is used to adjust the position of the illumination part.
The illumination part can be set to fixed device in the form of the irradiating angle of the adjustable light.
The fluid injection portion is set on fixture (JIG), and fixture is used to adjust the position in fluid injection portion
It sets.
The fluid injection portion can be set to adjust the angle of the injection of the fluid.
Including nozzle, the cleaning solution is configured in order the inside of nozzle is on the outside of the radial direction of the substrate
Ejection section, the illumination part, the fluid injection portion, the nozzle are moved since the center of the substrate along radial direction
It is dynamic, and the cleaning solution, the light, the fluid can be made successively to reach on the substrate.
In addition, the substrate board treatment can also include: vacuum plant, it is used to suck cleaning solution evaporation and generates
Steam.
In addition, it can include: chamber accommodates substrate, and executes drying substrates technique；Rotary chuck, with can
The form of rotation is set in the chamber, and supports the substrate；Drive shaft rotates the rotary chuck.
The cleaning solution can be IPA.
The light can be laser beam.
The fluid can be N2。
Substrate board treatment according to the present utility model sprays liquid condition when carrying out drying substrates technique using light
Cleaning solution while light is radiated on cleaning solution so that the temperature moment of cleaning solution increases, so that substrate is fast
Rapid-curing cutback is dry, and prevents pattern from tilting.
In addition, injection liquid, the cleaning solution steam of evaporation is blown to outside substrate, so as to improve the dry speed of substrate
Degree, and prevent pattern from tilting.
In addition, being provided with vacuum plant, the cleaning solution steam of evaporation is sucked into vacuum plant, so as to improve substrate
Rate of drying, and prevent pattern from tilting.
In addition, in the drying process using laser beam and IPA, so that the temperature of laser beam is less than the burning point 425 of IPA
DEG C, so as to prevent IPA from burning because of the laser beam of high temperature.
In addition, in the drying process using laser beam and IPA, so that the wavelength of laser beam is 300 μm to 1200 μm, it is excellent
Selection of land is 900 μm, and laser beam is quickly absorbed by IPA, so that minimum influence only is generated to substrate while temperature increases, thus
It can prevent substrate damage.
In addition, being provided with coloring window (Colored Window), may be sent out so as to prevent the reflection by laser beam
Raw accident.
Detailed description of the invention
Fig. 1 is the figure that outlined the pattern tilt phenomenon of semiconductor substrate.
Fig. 2 is the IPA-N that outlined the prior art2Dry figure.
Fig. 3 is the sectional view for indicating the composition of substrate board treatment according to the present utility model.
Fig. 4 is to indicate that a part of the substrate board treatment according to the present utility model including laser beam generating device is cutd open
Face figure.
Fig. 5 is to indicate the substrate board treatment according to the present utility model including laser beam generating device and vacuum plant
The sectional view of a part.
Fig. 6 is to indicate according to the present utility model including laser beam generating device and N2Supply unit and N2The substrate of ejection section
The sectional view of a part of processing unit.
Fig. 7 is the N for indicating supply according to the present utility model2The base of IPA vapor is blown from the center laterally outside of substrate
The sectional view of a part of plate processing unit.
Fig. 8 is to indicate laser beam generating device and N according to the present utility model2Ejection section and IPA ejection section move in groups
And execute the plan view of the substrate board treatment of drying process.
Fig. 9 is the precedence diagram for simply indicating substrate processing method using same according to the present utility model.
Figure 10 is the explanatory diagram that the substrate processing method using same of another embodiment according to the present utility model carries out.
Specific embodiment
Hereinafter, composition and effect to the preferred embodiment of the utility model carry out as described in detail below referring to attached drawing.
Referring to Fig. 3 to Fig. 7, substrate board treatment according to the present utility model is illustrated.
Substrate board treatment according to the utility model one embodiment includes: cleaning solution supply part (not shown), is supplied
To cleaning solution；Cleaning solution ejection section 130 is connected to the cleaning solution supply part (not shown), and the cleaning solution is sprayed
Onto the substrate W；Light is radiated at the cleaning solution being distributed on the substrate W by illumination part 140.
In addition, the substrate board treatment may include: chamber 100, substrate W is accommodated, and execute drying substrates technique；
Rotary chuck 122 is set in the chamber 100 in the form that can be rotated, and supports the substrate W；Drive shaft 121,
It rotates the rotary chuck 122.
The substrate W can be the silicon wafer as semiconductor substrate.But the utility model is not limited to this, institute
It states substrate W and can be and be used as such as LCD (liquid crystal display: liquid crystal display), PDP (plasma display
Panel: plasma display panel) the same glass of panel display apparatus etc. transparent substrate.In addition, the shape of the substrate W
Shape and size are not limited to attached drawing, can be round and quadrangular plate etc., can actually have various shapes and size.Root
According to the form and dimension of the substrate W, the size and shape of the rotary chuck 122 can also be changed.It is set in rotary chuck 122
Multiple clamper pins 123 are equipped with, so as to dispose substrate W.The clamper pin 123 can equally spacedly match along the periphery substrate W
It sets.The number and shape of the clamper pin 123 can carry out numerous variations.
Drive shaft 121 for rotating the rotary chuck 122 is connected to the lower part of the rotary chuck 122.Hair
Motivation provides rotary force, and the driving portion (not shown) including engine is connected to the drive shaft 121, by making the driving
Axis 121 and the rotary chuck 122 are rotated with fixing speed, so as to the substrate W being placed on the rotary chuck 122
It is dried.
The cleaning solution supply part (not shown) and the cleaning solution ejection section 130 are connected with each other and spray the cleaning solution
It is mapped on the substrate W.The cleaning solution can be the IPA of liquid condition.
The light issued from the illumination part 140 can be laser beam, as shown in figure 3, the laser beam can be irradiated
In the IPA being coated on the substrate W.At this point, the temperature of the laser beam is higher, the IPA is heated at high temperature same
When evaporation rate it is faster, so that the rate of drying of substrate W is also faster, pattern tilt phenomenon can be prevented.
It, can in the periphery of the substrate board treatment in order to prevent the accident that may occur due to the reflection of the laser beam
To be provided with coloring window (Colored Window) 180.
The substrate board treatment may include: fluid supply unit (not shown)；Fluid injection portion 150 is connected to institute
State fluid supply unit (not shown).The fluid that the fluid injection portion 150 is sprayed can be N2, by by the N2It is ejected into point
The IPA being distributed on the substrate W can make substrate W rapid draing.
As shown in figure 4, the illumination part 140 and the fluid injection portion 150 are set to fixture (JIG) 170, fixture
(JIG) 170 for being adjusted the position of the illumination part 140 and the fluid injection portion 150, so as to specified
The laser beam and the N2Reach the position on the substrate W.In addition, respective supply angle can be adjusted by being set to
The fixation device 171 of section, so as to specify the laser beam and the N2Reach the position on the substrate W.In Fig. 4,
A fixture 170 is incorporated into the illumination part 140 and the fluid injection portion 150 to be illustrated, but the illumination
It penetrates portion 140 and the fluid injection portion 150 is also configured to respectively in connection on independent fixture 170 and adjusting its position.
As shown in figure 5, the position of the illumination part 140 and the fluid injection portion 150 is adjusted, so that described
Laser beam is obliquely radiated at the IPA being distributed on the substrate W, later, can make the N2Perpendicular to described
The form of substrate W is ejected into the laser beam place of arrival.
In addition, making as shown in fig. 6, the position of the illumination part 140 and the fluid injection portion 150 is adjusted
The laser beam is radiated at the IPA being distributed on the substrate W in the form of perpendicular to the substrate W, later, can be with
So that the N2Obliquely it is ejected into the laser beam place of arrival.At this point, the N2With from the center of the substrate W outward
The form of blowout is sprayed, and can be played from the center of the substrate W simultaneously and be blown the heating evaporation due to laser beam outward
IPA vapor effect.
In addition, as shown in fig. 7, the substrate board treatment may include nozzle 172, the base of the nozzle 172 from rotation
The center of plate W starts to move along radial direction.Inside the nozzle 172 on the outside of the radial direction of the substrate W according to
Secondary to be configured with the cleaning solution ejection section 130, the illumination part 140 and the fluid injection portion 150, the nozzle 172 can
To be configured to move since the center of the substrate W of rotation along radial direction, at the same it is the IPA, the laser beam, described
N2It successively reaches on the substrate W.
Referring to Fig. 8, the composition of the substrate board treatment of another embodiment according to the present utility model is illustrated.
The substrate board treatment of another embodiment according to the present utility model can be, except illustrated by Fig. 4 to Fig. 5
Except the fluid supply unit (not shown) of substrate board treatment and fluid injection portion 150, the processing substrate including vacuum plant 160
Device.
As shown in figure 8, the vacuum plant 160 absorbs the IPA vapor, so that substrate rapid draing, institute
Stating IPA vapor is that laser beam is radiated on the IPA being distributed on substrate W and generates.
In addition, also can also include fluid injection portion 150 in the embodiment of described Fig. 8.
Referring to Fig. 9, the substrate processing method using same of one embodiment of the utility model is illustrated.
Step S10 is following steps: in the state that substrate W is placed in clamper pin 123, so that drive shaft 121 operates, from
And to be placed in the rotation of the substrate W on rotary chuck 122.
Step S20 is following steps: so that cleaning solution ejection section 130 operates, and the IPA of liquid condition being ejected into substrate
On W.
Step S30 is following steps: so that illumination part 140 operates, and laser beam being radiated at through the step S20
And it is distributed in the IPA on the substrate W, so that the temperature of the IPA increases, and accelerates evaporation rate, into
And the rate of drying of substrate is improved.
In the step S30, so that the temperature of the laser beam of irradiation is less than 425 DEG C of ignition temperature of the IPA,
So as to prevent from causing the burning of the IPA by high temperature.
In addition, the wavelength of the laser beam irradiated in the step S30 is made to be 300 μm to 1200 μm, it is preferable that
It is 900 μm, for the IPA, absorptivity is high and effectively transmits heat, and it is at the same time, low for the absorptivity of the substrate W,
So as to prevent substrate W damage caused by deteriorating.
Step S40 can be the steps of: so that fluid injection portion 150 operates, by by the N2It is ejected into the IPA
The substrate W is dried on solution.
For the substrate drying process, in the laser beam and the N2Position on the substrate W is reached from institute
The center for stating substrate W starts to may be implemented while movement along radial direction.At this point, making the N2It reaches on the substrate W
Position follow behind the position that the laser beam reaches on the substrate W, so as to pass through the N2It blows by laser
The IPA of Shu Jiare is simultaneously dried.Referring to Fig. 4 it is found that in fixture 170 along radius side since the center of the substrate W
In the case where movement, according to the cleaning solution ejection section 130, the illumination part 140, the fluid injection portion 150 it is suitable
Sequence is moved from the center of the substrate along radial direction, so according to the IPA, the laser beam, the N2Sequence reach
On the substrate.
In addition, as shown in fig. 7, comprises nozzle 172, in the inside of nozzle 172 from the radial direction of the substrate of rotation
Outside has been initially configured the cleaning solution ejection section 130, the illumination part 140, the fluid injection portion 150, the nozzle
172 move since the center of the substrate of rotation along radial direction, and the IPA, the laser beam, the N2Successively
It reaches on the substrate W, so as to execute drying process.
Referring to Fig.1 0, the substrate processing method using same of another embodiment according to the present utility model is illustrated.
The substrate processing method using same of another embodiment according to the present utility model is, instead of in substrate illustrated in fig. 9
The fluid injection portion 150 of step S40 in processing method and the method for operating vacuum plant 160.Step S40 can be as a result,
Following steps: by the way that IPA vapor to be sucked into inside the vacuum plant 160, so that the substrate W rapid draing, IPA steams
Vapour is that laser beam is radiated on the IPA being distributed on substrate W and generates.
As described above, the utility model is described in detail by taking preferred embodiment as an example, but the utility model is simultaneously
It is non-limiting in the embodiment, reality can be deformed in the range of the detailed description of claims and utility model and attached drawing
It applies to be a variety of, and this also belongs to the utility model.
Label declaration
W: substrate 100: chamber
121: drive shaft 122: rotary chuck
123: clamper pin 130: cleaning solution ejection section
140: illumination part 150: fluid injection portion
160: vacuum plant 170: fixture (JIG)
171: fixed device 172: nozzle
180: coloring window (Colored Window).
Claims (12)
1. a kind of substrate board treatment comprising:
Cleaning solution ejection section, to substrate jet cleaning liquid；
Light is radiated at the surface for being injected with the substrate of the cleaning solution by illumination part.
2. substrate board treatment according to claim 1, which is characterized in that further include:
Fluid injection portion is connected to fluid supply unit, sprays a fluid on the substrate.
3. substrate board treatment according to claim 1, which is characterized in that
The illumination part is set on fixture, and fixture is used to adjust the position of the illumination part.
4. substrate board treatment according to claim 1, which is characterized in that
The illumination part is set to fixed device in the form of the irradiating angle of the adjustable light.
5. substrate board treatment according to claim 2, which is characterized in that
The fluid injection portion is set on fixture, and fixture is used to adjust the position in the fluid injection portion.
6. substrate board treatment according to claim 2, which is characterized in that
The fluid injection portion is set as the angle of the injection of the adjustable fluid.
7. substrate board treatment according to claim 2 characterized by comprising
Nozzle is configured in order the cleaning solution ejection section, described inside is on the outside of the radial direction of the substrate
Illumination part, the fluid injection portion,
The nozzle is moved since the center of the substrate along radial direction, and makes the cleaning solution, light, described
Fluid successively reaches on the substrate.
8. substrate board treatment according to claim 1, which is characterized in that further include:
Vacuum plant is used to suck the cleaning solution evaporation and the steam of generation.
9. substrate board treatment as claimed in any of claims 1 to 8, which is characterized in that further include:
Chamber accommodates substrate, and executes drying substrates technique；
Rotary chuck is set in the chamber in the form that can be rotated, and supports the substrate；
Drive shaft rotates the rotary chuck.
10. substrate board treatment as claimed in any of claims 1 to 8, which is characterized in that
The cleaning solution is IPA.
11. substrate board treatment as claimed in any of claims 1 to 8, which is characterized in that
The light is laser beam.
12. substrate board treatment according to claim 2, which is characterized in that
The fluid is N2.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2017-0049578 | 2017-04-18 | ||
| KR1020170049578A KR20180116827A (en) | 2017-04-18 | 2017-04-18 | Apparatus for treating substrate and the method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN208478288U true CN208478288U (en) | 2019-02-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820548460.1U Active CN208478288U (en) | 2017-04-18 | 2018-04-18 | Substrate board treatment |
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| Country | Link |
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| KR (1) | KR20180116827A (en) |
| CN (1) | CN208478288U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111508820A (en) * | 2020-03-25 | 2020-08-07 | 长江存储科技有限责任公司 | Cleaning method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101931969B1 (en) | 2018-10-15 | 2018-12-24 | 안종팔 | Method for Monitoring Real-time Semiconductor Wafer Surface Temperature In Wafer Cleaning Apparatus |
| JP7228990B2 (en) * | 2018-11-07 | 2023-02-27 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
| KR20200122486A (en) | 2019-04-18 | 2020-10-28 | 삼성전자주식회사 | Wafer cleaning device |
-
2017
- 2017-04-18 KR KR1020170049578A patent/KR20180116827A/en not_active IP Right Cessation
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2018
- 2018-04-18 CN CN201820548460.1U patent/CN208478288U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111508820A (en) * | 2020-03-25 | 2020-08-07 | 长江存储科技有限责任公司 | Cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180116827A (en) | 2018-10-26 |
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