CN208433372U - Wafer elastic strain measuring device - Google Patents
Wafer elastic strain measuring device Download PDFInfo
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- CN208433372U CN208433372U CN201821321574.9U CN201821321574U CN208433372U CN 208433372 U CN208433372 U CN 208433372U CN 201821321574 U CN201821321574 U CN 201821321574U CN 208433372 U CN208433372 U CN 208433372U
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- wafer
- elastic strain
- measuring device
- strain measuring
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Abstract
The utility model relates to technical field of manufacturing semiconductors more particularly to a kind of wafer elastic strain measuring devices.The wafer elastic strain measuring device includes: supporting part, has wafer carrying face and the aeration aperture positioned at the wafer carrying face；It is set to the supporting part and surrounds the fixed part of the aeration aperture, for the marginal surface of wafer to be fixed to and is fitted in the wafer carrying face, enable makes wafer when being passed through gas into the aeration aperture deformation occurs and forms cavity between the wafer carrying face fixed part；Test section, for measure be passed through gas after the wafer deformation quantity.The utility model realizes the deformation quantity detection to wafer at a particular pressure, and the elastic strain characteristic so as to wafer before para-linkage is accurately measured, and improves the quality of wafer bonding, it is ensured that the performance of three-dimensional storage.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors more particularly to a kind of wafer elastic strain measuring devices.
Background technique
With the development of plane flash memories, the production technology of semiconductor achieves huge progress.But recently
Several years, the development of plane flash memory encountered various challenges: physics limit, the existing developing technique limit and storage electron density
Limit etc..In this context, to solve the difficulty that encounters of planar flash memory and pursue being produced into for lower unit storage unit
This, a variety of different three-dimensional (3D) flash memories structures are come into being, such as 3D NOR (3D or non-) flash memory and 3D NAND
(3D and non-) flash memory.
Wherein, storage unit is used three dimensional pattern layer using its small size, large capacity as starting point by 3D nand memory
Folded highly integrated of layer heap is design concept, produces the memory of high unit area storage density, efficient storage unit performance,
Have become the prevailing technology of emerging memory design and producing.
Wafer bonding technique causes more and more passes due to can be realized the stacking of three-dimension device higher number
Note.But since wafer bonding technological development history is shorter, the yield of bonding technology is affected by preceding processing procedure, and it is right at present
In the monitoring system of preceding processing procedure and not perfect, causes wafer bonding second-rate, seriously affect the performance of three-dimensional storage.
Therefore, how to improve wafer bonding quality, it is ensured that the stability of three-dimensional storage performance is urgently to be resolved at present
Technical problem.
Utility model content
The utility model provides a kind of wafer elastic strain measuring device, to solve the prior art be unable to before para-linkage it is brilliant
Round elastic strain characteristic carries out the problem that wafer bonding is second-rate caused by accurately measuring, to ensure three-dimensional storage
The stability of energy.
To solve the above-mentioned problems, the utility model provides a kind of wafer elastic strain measuring device, comprising:
Supporting part has wafer carrying face and the aeration aperture positioned at the wafer carrying face；
It is set to the supporting part and surrounds the fixed part of the aeration aperture, the fixed part is used for the Surface Edge of wafer
Edge is fixed and is fitted on the wafer carrying face, and enabling makes wafer when being passed through gas into the aeration aperture deformation occurs
And cavity is formed between the wafer carrying face；
Test section, for measure be passed through gas after the wafer deformation quantity.
Preferably, the supporting part is sucker.
Preferably, the fixed part is several adsorption holes being annularly intervally arranged.
Preferably, the distance between the adsorption hole and the supporting part center are 140mm~150mm.
Preferably, further includes: the groove on the wafer carrying face, the aeration aperture are located at the bottom of the groove
Portion, the fixed position is in the outside of the groove.
Preferably, further includes:
Sensor, for detecting the intracorporal air pressure of the chamber；
Controller, for being passed through the gas flow of the aeration aperture according to air pressure adjustment.
Preferably, there is at least one bonding label in the wafer；The test section includes:
Camera lens is arranged towards the wafer carrying face, for identification the bonding label, and obtains and be bonded label with described
The focal length of the corresponding camera lens；
Processor, for being passed through the coke for marking the determining camera lens before and after gas by the bonding according to the aeration aperture
Away from the deformation quantity for calculating the wafer.
Preferably, at least one bonding label includes that multiple bondings mark；The test section further include:
Bracket, the camera lens are installed on the bracket and can move along the bracket, to obtain respectively and multiple institutes
State multiple focal lengths that bonding marks the one-to-one camera lens.
Preferably, further includes: shell, the fixed position is in the accommodating chamber made of being surrounded as the shell.
Wafer elastic strain measuring device provided by the utility model, by fixing crystal round fringes, and to the one of wafer
Side surface applies pressure, and making wafer, deformation occurs, the deformation quantity detection at a particular pressure to wafer is realized, so as to right
The elastic strain characteristic of wafer is accurately measured before being bonded, and improves the quality of wafer bonding, it is ensured that three-dimensional storage
Performance.
Detailed description of the invention
Attached drawing 1 is the structural representation in specific embodiment of the present invention before the inflation of wafer elastic strain measuring device
Figure；
Attached drawing 2 is the structural representation in specific embodiment of the present invention after the inflation of wafer elastic strain measuring device
Figure；
Attached drawing 3 is the flow chart of wafer elastic strain measurement method in specific embodiment of the present invention；
Attached drawing 4 is the flow chart of wafer bonding method in specific embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawing to the tool of wafer elastic strain measuring device provided by the utility model and wafer bonding method
Body embodiment elaborates.
The characteristics of wafer bonding technique is due to its processing procedure, the shadow of the front-end process of wafer bonding to wafer bonding process yields
Sound is larger.Specifically, two wafers undergo different front-end process before carrying out bonding technology, when this two wafer reaches in fact
When applying the website of wafer bonding technique, at the same pressure, deformation quantity is not often identical for two wafers.But for key
It closes for board itself, due to the limitation of its process conditions, it is each at the same pressure often can not accurately to measure two wafers
From deformation quantity；Or be by force adjusted to the averaged deformation amount of two wafers unanimously by specific process means, but this
The mode that kind adjusts by force, necessarily causes two wafers in the increase of regional area deformation quantity difference.Therefore, because can not accuracy
The deformation quantity of amount wafer causes wafer bonding second-rate.
In order to solve this problem, present embodiment provides a kind of wafer elastic strain measuring device, and attached drawing 1 is
Structural schematic diagram in specific embodiment of the present invention before the inflation of wafer elastic strain measuring device, attached drawing 2 are that this is practical
Structural schematic diagram in novel specific embodiment after the inflation of wafer elastic strain measuring device.
As shown in Figure 1 and Figure 2, the wafer elastic strain measuring device that present embodiment provides, comprising: supporting part 11,
Fixed part 111 and test section 17.The supporting part 11 has wafer carrying face 12 and the inflation positioned at the wafer carrying face 12
Hole 112；The fixed part 111 is set to the supporting part 11 and around the aeration aperture 112, and the fixed part 111 is used for will
The marginal surface of wafer 13 is fixed and is fitted on the wafer carrying face 12, so that being passed through gas into the aeration aperture 112
Capable of making the wafer 13 when body, deformation occurs and cavity 20 is formed between the wafer carrying face；The test section 17, is used for
Measurement is passed through the deformation quantity of the wafer 13 after gas.
Specifically, the wafer elastic strain measuring device further includes shell 14, the supporting part 11 and the fixation
Portion 111 is in the accommodating chamber 10 made of being surrounded as shell 14.Multiple transmission structures 15 run through the supporting part 11 and being capable of edges
Vertical direction carries out elevating movement, and the wafer 13 is transferred to the wafer carrying face 12 of the supporting part 11 or is incited somebody to action
The wafer 13 is transferred to the external world from the wafer carrying face 12 of the supporting part 11.Have on the supporting part 11 and surrounds institute
The fixed part 111 of the setting of aeration aperture 112 is stated, the fixed part 111 by the edge of the wafer 13 for fixing and being fitted in institute
It states on wafer carrying face 12, to prevent during being passed through gas to the aeration aperture 112, the position of the wafer 13 occurs
It is mobile, influence the accuracy of measurement result.In this embodiment, since only the edge of the wafer 13 is fixed and being pasted
It, therefore, can be to the side of the wafer 13 when being passed through gas into the aeration aperture 112 together in the wafer carrying face 12
Surface applies gas pressure, so that deformation occurs for the wafer 13, i.e., so that the wafer 13 refers to along the wafer carrying face 12
To the direction of the wafer 13 protrusion, and in the wafer carrying face 12 and a side surface of the wafer 13 by gas pressure
Between formed cavity 20.By detecting to the deformation of the wafer 13 at a particular pressure, the crystalline substance can be accurately known
The elastic strain performance of circle 13 is adjusted processing procedure before the bonding of the wafer 13, as reference so as to effectively change
Kind wafer bonding quality, it is ensured that the stabilization of three-dimensional storage performance.
In order to reduce the overall cost of the wafer elastic strain measuring device, it is preferred that the supporting part 11 is sucker.
Preferably, the fixed part 111 is several adsorption holes being annularly intervally arranged.Specifically, the aeration aperture
112 are located at the center of the supporting part 11；Several adsorption holes being annularly intervally arranged are distributed in 11 edge of supporting part simultaneously
It is arranged around the aeration aperture 112.The adsorption hole is firmly adsorbed at the edge of the wafer 13 using vacuum suction effect
In the damage to crystal column surface on the wafer carrying face 12, on the one hand can be reduced, on the other hand also it is possible to prevente effectively from institute
Edge leakage of the gas in cavity 20 from the supporting part 11 is stated, the accurate of wafer elastic strain measurement is further improved
Degree.The particular number of the adsorption hole, those skilled in the art can select according to actual needs, in general, described
The quantity of adsorption hole is more, aperture is smaller, and the accuracy of measurement is higher, also stronger to the adsorption capacity of the wafer 13.
Elastic deformation occurs in order to not influence the wafer 13, it is preferred that the adsorption hole and 11 center of supporting part
The distance between be 140mm~150mm.It is furthermore preferred that the distance between the adsorption hole and 11 center of supporting part are
147mm。
Preferably, the wafer elastic strain measuring device, further includes: the groove on the wafer carrying face 12,
The aeration aperture 112 is located at the bottom of the groove, and the fixed part 111 is located at the outside of the groove.
Specifically, as shown in Figure 1 and Figure 2, it is formed with a groove on the wafer carrying face 12 of the supporting part 11,
The aeration aperture 112 is located at the bottom of the groove, and the fixed position is in the outside of the groove, so that the wafer
After 13 edges are fixed and are fitted on the wafer carrying face 12 by the fixed part 111, both made not to the aeration aperture
When 112 inflation, also there is a biggish gap area between the middle part of the wafer 13 and the wafer carrying face 12, in order to
Gas pressure is applied to a side surface of the wafer 13.
For the contact area being further reduced between the wafer 13 and the wafer carrying face 12, on the outside of the groove
Top have one to be directed toward the recess 113 that 12 direction of wafer carrying face extends along the wafer 13.When the fixed part 111
When for several adsorption holes being annularly intervally arranged, the adsorption hole is connected to the bottom of the recess 113.
In order to simplify the overall structure of the wafer elastic strain measuring device, it is preferred that the wafer elastic strain is surveyed
Measure device further include:
Sensor, for detecting the air pressure in the cavity 20；
Controller, for being passed through the gas flow of the aeration aperture 112 according to air pressure adjustment.
Specifically, the wafer elastic strain measuring device further includes pipeline 16, and the pipeline is embedded in the aeration aperture
In 112, for being passed through gas to the aeration aperture 112.Wherein, the gas can be nitrogen or inert gas.Pass through institute
State sensor can air pressure in cavity 20 described in real-time monitoring, so as to shape that is convenient, being accurately obtained the wafer 13
Relationship of the variable between the pressure being applied on the wafer 13.Meanwhile it being adjusted in the cavity 20 by the controller
Air pressure, so as to obtain the deformation quantity of the wafer 13 at various pressures, more comprehensively to know the wafer 13
Deformation and pressure between relationship.
In order to simplify the overall structure of the elastic strain measuring device, and the accuracy of measurement is further increased, preferably
, there is at least one bonding label 131 in the wafer 13；The test section 17 includes:
Camera lens 171, the wafer 171 are arranged towards the wafer carrying face 12, for identification the bonding label 131,
And it obtains and the focal length for being bonded the corresponding camera lens 171 of label 131；
Processor 172, for being passed through the institute determined before and after gas by the bonding label 131 according to the aeration aperture 112
The focal length for stating camera lens 171 calculates the deformation quantity of the wafer.
It is furthermore preferred that at least one bonding label 131 includes multiple bonding labels 131；The test section 17 further includes bracket
18, the camera lens 171 is installed on the bracket 18 and can move along the bracket 18, to obtain respectively and multiple keys
Close the multiple focal lengths for marking the one-to-one camera lens 171.Wherein, multiple bonding labels 131 are preferably in the wafer
It is uniformly distributed in 13, so as to more accurately measure to obtain the whole pattern variation of the wafer 13 at a particular pressure.
Since the deformation quantity that after being passed through gas to the aeration aperture 112, each position of the wafer 13 occurs may be different
It causes, the setting of the bonding label 131 is equivalent to and provides the reference point of deformation test, before being inflated by detection and fills
The focal length of the camera lens 171 determined after gas by the bonding label 131, can quickly know the deformation feelings of the wafer 13
Condition.
Specifically, the bonding label 131 is the copper label being set to inside the wafer 13.The camera lens 171 exists
It before the aeration aperture 112 is passed through gas, is moved along the bracket 18, the camera lens 171 is using described in transmitting infrared ray and reception
The mode for the infrared ray that wafer 13 reflects searches out the bonding label 131 in the wafer 13, and is finding the bonding
After label 131, camera lens 171 described in adjust automatically is bonded the distance between label 131 h1 with described, i.e., the described camera lens 171 is certainly
It is dynamic to focus, so that clearest, and the acquisition camera lens 171 at this time is imaged in the bonding label 131 in the camera lens 171
Focal length.The camera lens 171 moves after being passed through gas to the aeration aperture 112 along the bracket 18, red again by emitting
Outside line and the mode for receiving the infrared ray that the wafer 13 reflects find same bonding label 131 in the wafer 13, and
After finding the bonding label 131, automatic focusing is carried out again, i.e., camera lens 171 described in adjustment current state is bonded mark with described
The distance between 131 h2 of note so that the bonding label 131 be imaged in the camera lens 171 it is clearest, and obtain at this time described in
The focal length of camera lens 171.The coke that the processor 172 is determined according to the camera lens 171 before and after inflation with the bonding label 171
Away from the deformation quantity of the wafer 13 can be obtained.Wherein, the test section 17 not only can be along the bracket 18 in the horizontal plane
It is moved left and right, can also be moved forward and backward in the horizontal plane, to search out multiple keys inside the wafer 13
Close label 131.
Moreover, present embodiment additionally provides a kind of wafer elastic strain measurement method, and attached drawing 3 is that this is practical
The flow chart of wafer elastic strain measurement method in novel specific embodiment.As shown in figure 3, what present embodiment provided
Wafer elastic strain measurement method, includes the following steps:
Step S31 provides a wafer；
Step S32, the edge of the fixed wafer；
Step S33 applies pressure to a side surface of the wafer by gas, and making the wafer, deformation occurs；
Step S34 measures the deformation quantity of the wafer 13.
In this embodiment, elastic strain test first can be carried out to single crystal wafers, obtains single crystal wafers in spy
Elastic strain characteristic under constant-pressure, such as bending angle value；Then elastic strain is carried out respectively to by the wafer of different processing procedures
Test, to reflect the situation of change of the wafer elasticity modulus in wafer bonding front-end process.Wherein, the single crystal wafers are
Refer to the wafer for not carrying out any processing procedure.
Preferably, there is at least one bonding label in the wafer；Measure the specific steps packet of the deformation quantity of the wafer
It includes:
One camera lens is provided；
The bonding label is searched for by the camera lens；
It is right that institute when identifying bonding label before the gas applies pressure to a side surface of the wafer is detected respectively
The first focal length and the gas for the camera lens answered identify the bonding after applying pressure to a side surface of the wafer
Second focal length of corresponding camera lens when label；
The deformation quantity of the wafer is calculated according to first focal length and second focal length.
Wherein, the specific method that the deformation quantity of the wafer is calculated according to first focal length and second focal length, can
To be the deformation size for reflecting the wafer according to the difference between first focal length and second focal length.
The elastic strain characteristic of the wafer entirety in order to obtain, it is preferred that at least one bonding label includes multiple bondings
Label；Measure the specific steps of the deformation quantity of the wafer further include:
Measurement is bonded the one-to-one wafer deformation amount of label with multiple respectively.
Preferably, the wafer elastic strain measurement method further includes following steps:
The pressure that the gas applies to one side surface of wafer is adjusted, to measure the wafer at various pressures
Deformation quantity.
Moreover, present embodiment additionally provides a kind of wafer bonding method, and attached drawing 4 is that the utility model is specific
The flow chart of wafer bonding method in embodiment, the specific method of wafer elastic strain test can join in present embodiment
See Fig. 3.As shown in Figure 3, Figure 4, the wafer bonding method that present embodiment provides, includes the following steps:
Step S41 provides the wafer that two panels is bonded in advance；
Step S42 detects the elastic strain characteristic of two wafers respectively, will be described when detecting the elastic strain characteristic of wafer
Crystal round fringes are fixed, and apply pressure to a side surface of the wafer by gas, making the wafer, deformation occurs, and measures institute
State the deformation quantity of wafer；
Step S43 at least adjusts the bonding front-end process of a wafer, so that the deformation quantity of two wafers at the same pressure
It is equal.Wherein, the front-end process refers to, the manufacturing process that the wafer is carried out before implementing wafer bonding technique.
Step S44 is bonded wafer described in two panels.
In present embodiment, by carrying out elastic strain test to two wafers being bonded in advance, to obtain respectively
Relationship between pressure suffered by two wafers and its deformation quantity.According to this relationship, to the leading portion system of at least wafer
Journey technique is adjusted, so that two wafers can generate at the same pressure during finally carrying out wafer bonding
Equal deformation quantity realizes more accurate wafer bonding Alignment Process, further decreases line width, improves wafer bonding quality,
Improve the performance of three-dimensional storage.
Preferably, there is at least one bonding label in the wafer；Measure the specific steps packet of the deformation quantity of the wafer
It includes:
One camera lens is provided；
The bonding label is searched for by the camera lens；
It is right that institute when identifying bonding label before the gas applies pressure to a side surface of the wafer is detected respectively
The first focal length and the gas for the camera lens answered identify the bonding after applying pressure to a side surface of the wafer
Second focal length of corresponding camera lens when label；
The deformation quantity of the wafer 13 is calculated according to first focal length and second focal length.
Preferably, at least one bonding label includes that multiple bondings mark；Measure the specific steps of the deformation quantity of the wafer
Further include:
Measurement is bonded one-to-one 13 deformation quantity of wafer of label with multiple respectively.
Preferably, the elastic strain feature for detecting two wafers respectively further includes following steps:
The pressure that the gas applies to one side surface of wafer is adjusted, to measure the wafer at various pressures
Deformation quantity.
Since wafer is before carrying out bonding technology, need to undergo hundreds and thousands of road front-end process techniques, art technology
Personnel can come real by adjusting one making technology of the condition of a certain front-end process technique, one making technology of increase or reduction
The adjustment of wafer elastic strain characteristic before existing para-linkage.In order to further ensure that the performance of final product wafer, and reduce wafer
The cost of bonding, it is preferred that the bonding front-end process of a wafer is at least adjusted, so that the deformation of two wafers at the same pressure
Measuring equal specific steps includes:
Elastic membrane is formed in a side surface for a wafer, improves the elastic strain characteristic of the wafer, so that two panels
The deformation quantity of wafer at the same pressure is equal.
The wafer elastic strain measuring device that present embodiment provides, by fixing crystal round fringes, and to wafer
A side surface apply pressure, making wafer, deformation occurs, realize to wafer at a particular pressure deformation quantity detection, so as to
The elastic strain characteristic of wafer is accurately measured before enough para-linkages, improves the quality of wafer bonding, it is ensured that three-dimensional is deposited
The performance of reservoir.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
Art personnel can also make several improvements and modifications without departing from the principle of this utility model, these improvements and modifications
Also it should be regarded as the protection scope of the utility model.
Claims (9)
1. a kind of wafer elastic strain measuring device characterized by comprising
Supporting part has wafer carrying face and the aeration aperture positioned at the wafer carrying face；
It is set to the supporting part and surrounds the fixed part of the aeration aperture, the fixed part is for consolidating the marginal surface of wafer
Determine and be fitted on the wafer carrying face, enable make wafer when being passed through gas into the aeration aperture deformation occurs and with
Cavity is formed between the wafer carrying face；
Test section, for measure be passed through gas after the wafer deformation quantity.
2. wafer elastic strain measuring device according to claim 1, which is characterized in that the supporting part is sucker.
3. wafer elastic strain measuring device according to claim 1, which is characterized in that it is in ring that the fixed part, which is several,
The adsorption hole that shape is intervally arranged.
4. wafer elastic strain measuring device according to claim 3, which is characterized in that the adsorption hole and the carrying
The distance between portion center is 140mm~150mm.
5. wafer elastic strain measuring device according to claim 1, which is characterized in that further include: it is located at the wafer
Groove on loading end, the aeration aperture are located at the bottom of the groove, and the fixed position is in the outside of the groove.
6. wafer elastic strain measuring device according to claim 1, which is characterized in that further include:
Sensor, for detecting the intracorporal air pressure of the chamber；
Controller, for being passed through the gas flow of the aeration aperture according to air pressure adjustment.
7. wafer elastic strain measuring device according to claim 1, which is characterized in that have at least one in the wafer
Bonding label；The test section includes:
Camera lens is arranged towards the wafer carrying face, for identification the bonding label, and obtains and correspond to the label that is bonded
The camera lens focal length；
Processor, for being passed through the focometer for marking the determining camera lens before and after gas by the bonding according to the aeration aperture
Calculate the deformation quantity of the wafer.
8. wafer elastic strain measuring device according to claim 7, which is characterized in that at least one bonding label includes more
A bonding label；The test section further include:
Bracket, the camera lens are installed on the bracket and can move along the bracket, to obtain respectively and multiple keys
Close the multiple focal lengths for marking the one-to-one camera lens.
9. wafer elastic strain measuring device according to claim 1, which is characterized in that further include: shell, the fixation
Portion is in the accommodating chamber made of being surrounded as the shell.
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| CN201821321574.9U CN208433372U (en) | 2018-08-14 | 2018-08-14 | Wafer elastic strain measuring device |
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| CN201821321574.9U CN208433372U (en) | 2018-08-14 | 2018-08-14 | Wafer elastic strain measuring device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987296A (en) * | 2018-08-14 | 2018-12-11 | 长江存储科技有限责任公司 | Wafer elastic strain measuring device, measurement method and wafer bonding method |
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2018
- 2018-08-14 CN CN201821321574.9U patent/CN208433372U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987296A (en) * | 2018-08-14 | 2018-12-11 | 长江存储科技有限责任公司 | Wafer elastic strain measuring device, measurement method and wafer bonding method |
| CN108987296B (en) * | 2018-08-14 | 2024-04-02 | 长江存储科技有限责任公司 | Wafer elastic strain measuring device, measuring method and wafer bonding method |
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