CN208432849U - A kind of photo-etching illuminating apparatus and exposure system - Google Patents
A kind of photo-etching illuminating apparatus and exposure system Download PDFInfo
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- CN208432849U CN208432849U CN201821219612.XU CN201821219612U CN208432849U CN 208432849 U CN208432849 U CN 208432849U CN 201821219612 U CN201821219612 U CN 201821219612U CN 208432849 U CN208432849 U CN 208432849U
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Abstract
The utility model embodiment provides a kind of photo-etching illuminating apparatus and exposure system, it include: the first diffraction optical element, zoom microscope group, the second diffraction optical element, convergence microscope group and the even light unit that same optical axis is arranged and is arranged successively, the photo-etching illuminating apparatus further includes positioned at even light unit far from the relaying microscope group for assembling microscope group side；Far-field distribution by the light beam of second diffraction optical element is ellipse or polygon；The number of edges of the polygon is more than or equal to 5.The utility model embodiment provides a kind of photo-etching illuminating apparatus and exposure system, provides uniform illumination field of view to realize.
Description
Technical field
The utility model embodiment is related to optical devices technologies more particularly to a kind of photo-etching illuminating apparatus and exposure system.
Background technique
Microlithography technology in semiconductors manufacture is exactly that the figure on mask plate is accurately projected exposure using optical system
On light to the silicon wafer of coated photoresist.
Exposure system includes photo-etching illuminating apparatus, mask plate, projection objective and the work stage for precisely aligning silicon wafer.
Photo-etching illuminating apparatus needs provide uniform rectangular field on exposure mask face, then pass through projection objective for the figure on mask plate
It projects on silicon wafer and is exposed.With the development of semiconductor industry, the requirement to the photo-etching illuminating apparatus of photoetching technique also exists
It improves.Photo-etching illuminating apparatus needs to provide uniform illumination field of view, this problems demand solves.
Utility model content
The utility model embodiment provides a kind of photo-etching illuminating apparatus and exposure system, provides uniform illumination view to realize
?.
In a first aspect, the utility model embodiment provides a kind of photo-etching illuminating apparatus, comprising: be arranged with optical axis and successively arrange
First diffraction optical element of column, the second diffraction optical element, assembles microscope group and even light unit at zoom microscope group, and the photoetching is shone
Bright device further includes positioned at even light unit far from the relaying microscope group for assembling microscope group side；
Far-field distribution by the light beam of second diffraction optical element is ellipse or polygon；The polygon
Number of edges be more than or equal to 5.
Optionally, the focal plane far from first diffraction optical element side of the zoom microscope group is pupil face, described
Second diffraction optical element is located on the pupil face.
Optionally, the even light unit is quartz pushrod.
Optionally, the shape of the light-receiving surface of the even light unit is rectangle, long side length of the rectangle along first direction
For a, the bond length of the rectangle in a second direction is b.
Optionally, along the first direction, by the angle of divergence θ of the light beam of second diffraction optical element1Meet:In the second direction, by the angle of divergence θ of the light beam of second diffraction optical element2Meet:Wherein, f is the focal length for assembling microscope group.
It optionally, is ellipse by the far-field distribution of the light beam of second diffraction optical element；
Telecentricity by the far-field distribution of the light beam of second diffraction optical element is [- 1,1] mrad, and the telecentricity is
The angle of chief ray and optical axis.
It optionally, is ellipse by the far-field distribution of the light beam of second diffraction optical element；
It is divided into the pole balance of the light beam in i angle plane region are as follows:
Wherein, EiFor the light in the i-th region in angle plane
Strong summation, max (E1... ..., Ei) be the maximum region of light intensity in i region light intensity value, min (E1... ..., Ei) it is i
The light intensity value in the smallest region of light intensity in a region, i are the positive integer greater than 1；
The pole X balance by the far-field distribution of the light beam of second diffraction optical element is 0~3%, and the X is extremely flat
Weighing apparatus property is that the pole balance of the light beam in two angle plane regions is divided into along the second direction.
It optionally, is ellipse by the far-field distribution of the light beam of second diffraction optical element；
It is divided into the pole balance of the light beam in i angle plane region are as follows:
Wherein, EiFor the light in the i-th region in angle plane
Strong summation, max (E1... ..., Ei) be the maximum region of light intensity in i region light intensity value, min (E1... ..., Ei) it is i
The light intensity value in the smallest region of light intensity in a region, i are the positive integer greater than 1；
The pole Y balance by the far-field distribution of the light beam of second diffraction optical element is 0~3%, and the Y is extremely flat
Weighing apparatus property is that the pole balance of the light beam in two angle plane regions is divided into along the first direction.
It optionally, is ellipse by the far-field distribution of the light beam of second diffraction optical element；
It is divided into the pole balance of the light beam in i angle plane region are as follows:
Wherein, EiFor the light in the i-th region in angle plane
Strong summation, max (E1... ..., Ei) be the maximum region of light intensity in i region light intensity value, min (E1... ..., Ei) it is i
The light intensity value in the smallest region of light intensity in a region, i are the positive integer greater than 1；
By the four-quadrant pole balance extremely 0~4% of the far-field distribution of the light beam of second diffraction optical element, institute
Stating four-quadrant pole balance is the light beam that four angle plane regions are divided into along the first direction and the second direction
Pole balance.
Second aspect, the utility model embodiment provide a kind of exposure system, including lithographic illumination described in first aspect
Device, the exposure system further include mask plate, projection objective and work stage；The mask plate is located at the projection objective in
After between microscope group, the work stage is located at the projection objective far from the relaying microscope group side.
The utility model embodiment provides a kind of photo-etching illuminating apparatus, and photo-etching illuminating apparatus includes the second diffraction optics member
Part, the second diffraction optical element are located between zoom microscope group and convergence microscope group, and the second diffraction optical element has light diffusion special
Property or light diffraction characteristic, so as to keep pupil more uniform.When without using the second diffraction optical element, it is irradiated to even light list
Beam sizes on the light-receiving surface of member are smaller, and energy comparison is concentrated, and are easy to damage even light unit, therefore the utility model is implemented
By using the second diffraction optical element in example, additionally it is possible to prevent the light beam being incident in even light unit from causing to hurt to even light unit
Evil, improves the service life of even light unit.By the second diffraction optical element light beam far-field distribution be ellipse or
Polygon (number of edges of polygon is more than or equal to 5), that is, the light-receiving surface of even light unit is filled out using ellipse or polygon
It fills, compactedness is higher, so that the light beam being emitted after even light unit be made to have preferable pupil uniformity.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of photo-etching illuminating apparatus provided by the embodiment of the utility model；
Fig. 2 is a kind of floor map by the far-field distribution of the light beam of the second diffraction optical element；
Fig. 3 is another floor map by the far-field distribution of the light beam of the second diffraction optical element；
Fig. 4 is a kind of stereoscopic schematic diagram by the far-field distribution of the light beam of the second diffraction optical element；
Fig. 5 is the schematic diagram of the pole the X balance by the far-field distribution of the light beam of the second diffraction optical element；
Fig. 6 is the schematic diagram of the pole the Y balance by the far-field distribution of the light beam of the second diffraction optical element；
Fig. 7 is the schematic diagram of the four-quadrant pole balance by the far-field distribution of the light beam of the second diffraction optical element；
Fig. 8 is a kind of structural schematic diagram of exposure system provided by the embodiment of the utility model.
Specific embodiment
The utility model is described in further detail with reference to the accompanying drawings and examples.It is understood that herein
Described specific embodiment is used only for explaining the utility model, rather than the restriction to the utility model.It further needs exist for
It is bright, part relevant to the utility model is illustrated only for ease of description, in attached drawing rather than entire infrastructure.
Fig. 1 is a kind of structural schematic diagram of photo-etching illuminating apparatus provided by the embodiment of the utility model, and Fig. 2 is by second
A kind of floor map of the far-field distribution of the light beam of diffraction optical element, with reference to Fig. 1 and Fig. 2, photo-etching illuminating apparatus includes: same
The first diffraction optical element 101, zoom microscope group 102, the second diffraction optical element that optical axis (optical axis L 1) is arranged and is arranged successively
103, microscope group 104 and even light unit 105 are assembled, photo-etching illuminating apparatus further includes being located at even light unit 105 far from convergence microscope group 104
The relaying microscope group 106 of side.Generally there is relief pattern on first diffraction optical element 101 and the second diffraction optical element 103
To show required diffusion property or diffraction characteristic.First diffraction optical element 101 and the second diffraction optical element 103
Two-dimensional sphere microlens array, Fresnel lens or diffraction grating can such as be used.First diffraction optical element 101 is in
The diffusion property for revealing point symmetry, the far-field distribution by the light beam of the first diffraction optical element 101 is circle, by varifocal mirror
The pupil size that the light of group 102 is formed can change with the focal length variations of zoom microscope group 102, that is to say, that Ke Yitong
The focal length of zoom microscope group 102 is overregulated to form the pupil of continuous variable, to meet different exposure demands.Second diffraction optics
Element 103 shows anisotropic diffusion property, and the far-field distribution by the light beam of the second diffraction optical element 103 for example may be used
Think ellipse or polygon.By the second diffraction optical element 103 light beam far field at infinity, through convergence microscope group
After 104 convergence, the far field by the light beam of the second diffraction optical element 103 is located on the focal plane of convergence microscope group 104, even light
The light-receiving surface of unit 105 is located on the focal plane of convergence microscope group 104, by the far field of the light beam of the second diffraction optical element 103
It is formed in the light-receiving surface of even light unit 105.With reference to Fig. 2, the far-field distribution by the light beam of the second diffraction optical element 103 is ellipse
Round (in Fig. 2 shown in dotted line).
Fig. 3 be by another floor map of the far-field distribution of the light beam of the second diffraction optical element, with reference to Fig. 1 and
Fig. 3, the far-field distribution by the light beam of the second diffraction optical element 103 are polygon (in Fig. 3 shown in dotted line), the side of polygon
Number was more than or equal to for 5 (illustratively being illustrated by taking octagon as an example in Fig. 3).
The utility model embodiment provides a kind of photo-etching illuminating apparatus, and photo-etching illuminating apparatus includes the second diffraction optics member
Part, the second diffraction optical element are located between zoom microscope group and convergence microscope group, and the second diffraction optical element has light diffusion special
Property or light diffraction characteristic, so as to keep pupil more uniform.When without using the second diffraction optical element, it is irradiated to even light list
Beam sizes on the light-receiving surface of member are smaller, and energy comparison is concentrated, and are easy to damage even light unit, therefore the utility model is implemented
By using the second diffraction optical element in example, additionally it is possible to prevent the light beam being incident in even light unit from causing to hurt to even light unit
Evil, improves the service life of even light unit.By the second diffraction optical element light beam far-field distribution be ellipse or
Polygon (number of edges of polygon is more than or equal to 5), that is, the light-receiving surface of even light unit is filled out using ellipse or polygon
It fills, compactedness is higher, so that the light beam being emitted after even light unit be made to have preferable pupil uniformity.
Optionally, with reference to Fig. 1, the focal plane far from 101 side of the first diffraction optical element of zoom microscope group 102 is pupil
Face, the second diffraction optical element 103 are located on pupil face.The focal length variations of zoom microscope group 102 cause to be irradiated to the second diffraction optics
Pupil size variation on element 103, since the second diffraction optical element 103 is located on pupil face, is irradiated to the second diffraction
The variation of pupil size on optical element 103 will not influence the far-field distribution of the second diffraction optical element 103, i.e. pupil size
Variation do not influence even light unit 105 light-receiving surface compactedness, thus make even 105 light-receiving surface of light unit have stablize and it is higher
Compactedness, make the light beam being emitted after even light unit 105 have preferable pupil uniformity.The light of even light unit 105
The compactedness in face is the ratio of the beam area being irradiated in even light unit 105 and the area of light-receiving surface.
Optionally, with reference to Fig. 1, even light unit 105 is quartz pushrod.Light is in quartz pushrod in quartz pushrod after multiple reflections
Light-emitting surface forms Uniform Illumination region, object plane imaging of the Uniform Illumination as relaying microscope group 106, in the image planes of relaying microscope group 106
Form the Uniform Illumination visual field with certain telecentricity and numerical aperture.
Optionally, with reference to Fig. 1 and Fig. 2, the shape of the light-receiving surface of even light unit 105 is rectangle, and rectangle is along first direction (X
Axis direction) long side length be a, rectangle in a second direction (Y direction) bond length be b.In general, the shape of mask plate
Shape is rectangle, therefore it is rectangle that the light-receiving surface of even light unit 105 and the shape of light-emitting surface, which can be set, to make even light unit
The beam shape that 105 light-emitting surface is irradiated on mask plate is adapted with the shape of mask plate.
Fig. 4 is by a kind of stereoscopic schematic diagram of the far-field distribution of the light beam of the second diffraction optical element, with reference to Fig. 1, Fig. 2
And Fig. 4, the shape of the light-receiving surface of even light unit 105 are rectangle, rectangle is a, square along the long side length of first direction (X-direction)
Shape in a second direction (Y direction) bond length be b.Microscope group 104 is accumulated by the light beam of the second diffraction optical element 103
It focuses on the light-receiving surface of even light unit 105.In first direction (X-direction), by the light of the second diffraction optical element 103
The angle of divergence θ of beam1Meet:F is the focal length for assembling microscope group 104, then is irradiated on the light-receiving surface of even light unit 105
Light beam the short side of rectangle can be arrived in first direction (X-direction), illustratively, the short side phase of ellipse and rectangle
It cuts；In a second direction in (Y direction), by the angle of divergence θ of the light beam of the second diffraction optical element 1032Meet:Wherein, f is the focal length for assembling microscope group 104, then is irradiated to light beam on the light-receiving surface of even light unit 105 along the
The long side of rectangle can be arrived on two directions (Y direction), illustratively, ellipse is tangent with the long side of rectangle.It needs to illustrate
, the direction of observation of the XY coordinate system of foundation is along the light direction of propagation.In the utility model embodiment, along first direction
In (X-direction), by the angle of divergence θ of the light beam of the second diffraction optical element 1031Meet:In a second direction
In (Y direction), by the angle of divergence θ of the light beam of the second diffraction optical element 1032Meet:To make even light
105 light-receiving surface of unit compactedness with higher makes the light beam being emitted after even light unit 105 have preferable pupil uniform
Property.
Pass through on the basis of even 105 light-receiving surface of light unit of guarantee compactedness with higher with reference to Fig. 1, Fig. 2 and Fig. 4
The far-field distribution of the light beam of second diffraction optical element 103 is that ellipse is a kind of more preferred filling mode.Below for
The filling of ellipse is described further.
Optionally, the telecentricity by the far-field distribution of the light beam of the second diffraction optical element 103 is [- 1,1] mrad, telecentricity
For the angle of chief ray and optical axis, the degree that chief ray deviates optical axis is represented.The numerical value of telecentricity is bigger, then chief ray deviates light
The degree of axis is bigger；The numerical value of telecentricity is smaller, then the degree of chief ray deviation optical axis is smaller.It is not provided with the second diffraction optical element
When 103, the telecentricity of the far-field distribution of light beam is -1.71mrad, it is seen then that the second diffraction optical element 103 of setting can reduce master
Light deviates the degree of optical axis, improves the exposure quality of photo-etching illuminating apparatus.
It is divided into the pole balance of the light beam in i angle plane region are as follows:
Wherein, EiFor the light in the i-th region in angle plane
Strong summation, max (E1... ..., Ei) be the maximum region of light intensity in i region light intensity value, min (E1... ..., Ei) it is i
The light intensity value in the smallest region of light intensity in a region, i are the positive integer greater than 1.
Fig. 5 be by the second diffraction optical element light beam far-field distribution the pole X balance schematic diagram, with reference to Fig. 1,
Fig. 4 and Fig. 5, X pole balance are that the pole for the light beam that (Y direction) is divided into two angle plane regions in a second direction balances
Property, two regions are respectively labeled as left area X- and right area X+, then the pole X balance meets:The pole X balance by the far-field distribution of the light beam of the second diffraction optical element 103 is 0~3%.
Fig. 6 be by the second diffraction optical element light beam far-field distribution the pole Y balance schematic diagram, with reference to Fig. 1,
Fig. 4 and Fig. 6, Y pole balance are that the pole balance of the light beam in two angle plane regions is divided into along first direction (X-direction)
Property, two regions are respectively labeled as upper-side area Y+ and underside area Y-, then the pole Y balance meets:The pole Y balance by the far-field distribution of the light beam of the second diffraction optical element 103 is 0~3%.No
When the second diffraction optical element 103 is arranged, the pole the Y balance of the far-field distribution of light beam is 4.6%, it is seen then that the second diffraction of setting
Optical element 103 can make the light beam being irradiated on even 105 light-receiving surface of light unit have the better pole Y balance, that is to say, that
The light distribution for the light beam being irradiated on even 105 light-receiving surface of light unit can be made more uniform.
Fig. 7 is the schematic diagram of the four-quadrant pole balance by the far-field distribution of the light beam of the second diffraction optical element, ginseng
Fig. 1, Fig. 4 and Fig. 6 are examined, four-quadrant pole balance is to be divided into along first direction (X-direction) and second direction (Y direction)
The pole balance of the light beam in four angle plane regions, four regions are respectively labeled as first area 1, second area 2, third area
Domain 3 and the fourth region 4, then four-quadrant pole balance meets:
Four-quadrant pole balance by the far-field distribution of the light beam of the second diffraction optical element 103 is 0~4%.Second is not provided with to spread out
When penetrating optical element 103, the four-quadrant pole balance of the far-field distribution of light beam is 5.6%, it is seen then that setting the second diffraction optics member
Part 103 can make the light beam being irradiated on even 105 light-receiving surface of light unit have better four-quadrant pole balance, that is to say, that
The light distribution for the light beam being irradiated on even 105 light-receiving surface of light unit can be made more uniform.
The utility model embodiment also provides a kind of exposure system, and Fig. 8 is a kind of exposure provided by the embodiment of the utility model
The structural schematic diagram of photosystem, with reference to Fig. 8, exposure system includes the photo-etching illuminating apparatus in any of the above-described embodiment, exposure system
System further includes mask plate 107, projection objective 108 and work stage 109.Mask plate 107 is located at projection objective 108 and relaying microscope group
Between 106, work stage 109 is located at projection objective 108 far from relaying 106 side of microscope group.The optical axis L 2 and zoom of projection objective 108
The optical axis L 1 of microscope group 102 intersects in relaying microscope group 106, and the light beam of the light-emitting surface outgoing of even light unit 105 is irradiated along optical axis L 1
To relaying microscope group 106, then it is emitted and is irradiated on mask plate 107 along optical axis L 2, by the graphic projection on mask plate 107 to position
In the exposure on the workpiece (being not shown in Fig. 8) of work stage 109, with realization to workpiece.Since exposure system includes any of the above-described
Photo-etching illuminating apparatus in embodiment, therefore the related advantages with above-mentioned photo-etching illuminating apparatus, overlaps will not be repeated.
Note that above are only the preferred embodiment and institute's application technology principle of the utility model.Those skilled in the art's meeting
Understand, the utility model is not limited to specific embodiment described here, is able to carry out for a person skilled in the art various bright
Aobvious variation is readjusted, be combined with each other and is substituted without departing from the protection scope of the utility model.Therefore, although passing through
Above embodiments are described in further detail the utility model, but the utility model is not limited only to the above implementation
Example can also include more other equivalent embodiments in the case where not departing from the utility model design, and the utility model
Range is determined by the scope of the appended claims.
Claims (10)
1. a kind of photo-etching illuminating apparatus characterized by comprising the first diffraction optics member for being arranged with optical axis and being arranged successively
Part, the second diffraction optical element, assembles microscope group and even light unit at zoom microscope group, and the photo-etching illuminating apparatus further includes positioned at even
Light unit is far from the relaying microscope group for assembling microscope group side；
Far-field distribution by the light beam of second diffraction optical element is ellipse or polygon；The side of the polygon
Number is more than or equal to 5.
2. photo-etching illuminating apparatus according to claim 1, which is characterized in that the zoom microscope group is spread out far from described first
The focal plane for penetrating optical element side is pupil face, and second diffraction optical element is located on the pupil face.
3. photo-etching illuminating apparatus according to claim 1, which is characterized in that the even light unit is quartz pushrod.
4. photo-etching illuminating apparatus according to claim 1, which is characterized in that the shape of the light-receiving surface of the even light unit is
Rectangle, the rectangle are a along the long side length of first direction, and the bond length of the rectangle in a second direction is b.
5. photo-etching illuminating apparatus according to claim 4, which is characterized in that along the first direction, by described
The angle of divergence θ of the light beam of two diffraction optical elements1Meet:In the second direction, spread out by described second
Penetrate the angle of divergence θ of the light beam of optical element2Meet:Wherein, f is the focal length for assembling microscope group.
6. photo-etching illuminating apparatus according to claim 4, which is characterized in that by the light of second diffraction optical element
The far-field distribution of beam is ellipse；
Telecentricity by the far-field distribution of the light beam of second diffraction optical element is [- 1,1] mrad, and the telecentricity is key light
The angle of line and optical axis.
7. photo-etching illuminating apparatus according to claim 4, which is characterized in that by the light of second diffraction optical element
The far-field distribution of beam is ellipse；
It is divided into the pole balance of the light beam in i angle plane region are as follows:
Wherein, EiLight intensity for the i-th region in angle plane is total
With max (E1... ..., Ei) be the maximum region of light intensity in i region light intensity value, min (E1... ..., Ei) it is i area
The light intensity value in the smallest region of light intensity in domain, i are the positive integer greater than 1；
The pole X balance by the far-field distribution of the light beam of second diffraction optical element is 0~3%, the pole X balance
For be divided into along the second direction two angle plane regions light beam pole balance.
8. photo-etching illuminating apparatus according to claim 4, which is characterized in that by the light of second diffraction optical element
The far-field distribution of beam is ellipse；
It is divided into the pole balance of the light beam in i angle plane region are as follows:
Wherein, EiLight intensity for the i-th region in angle plane is total
With max (E1... ..., Ei) be the maximum region of light intensity in i region light intensity value, min (E1... ..., Ei) it is i area
The light intensity value in the smallest region of light intensity in domain, i are the positive integer greater than 1；
The pole Y balance by the far-field distribution of the light beam of second diffraction optical element is 0~3%, the pole Y balance
For be divided into along the first direction two angle plane regions light beam pole balance.
9. photo-etching illuminating apparatus according to claim 4, which is characterized in that by the light of second diffraction optical element
The far-field distribution of beam is ellipse；
It is divided into the pole balance of the light beam in i angle plane region are as follows:
Wherein, EiLight intensity for the i-th region in angle plane is total
With max (E1... ..., Ei) be the maximum region of light intensity in i region light intensity value, min (E1... ..., Ei) it is i area
The light intensity value in the smallest region of light intensity in domain, i are the positive integer greater than 1；
By the four-quadrant pole balance extremely 0~4% of the far-field distribution of the light beam of second diffraction optical element, described four
Quadrant pole balance be divided into along the first direction and the second direction four angle plane regions light beam it is extremely flat
Weighing apparatus property.
10. a kind of exposure system, which is characterized in that including the described in any item photo-etching illuminating apparatus of claim 1-8, the exposure
Photosystem further includes mask plate, projection objective and work stage；The mask plate is located between the projection objective and relaying microscope group,
The work stage is located at the projection objective far from the relaying microscope group side.
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| CN201821219612.XU CN208432849U (en) | 2018-07-27 | 2018-07-27 | A kind of photo-etching illuminating apparatus and exposure system |
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| CN201821219612.XU CN208432849U (en) | 2018-07-27 | 2018-07-27 | A kind of photo-etching illuminating apparatus and exposure system |
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