CN208424343U - Power amplifier module and high-frequency model - Google Patents
Power amplifier module and high-frequency model Download PDFInfo
- Publication number
- CN208424343U CN208424343U CN201820497150.1U CN201820497150U CN208424343U CN 208424343 U CN208424343 U CN 208424343U CN 201820497150 U CN201820497150 U CN 201820497150U CN 208424343 U CN208424343 U CN 208424343U
- Authority
- CN
- China
- Prior art keywords
- power
- circuit
- band
- supply voltage
- power amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Amplifiers (AREA)
Abstract
The utility model provides a kind of power amplifier module and high-frequency model, and the diminution and cost for realizing the circuit scale of power amplifier module are reduced.Power amplifier module (40) has: multiple power amplifiers (111,121)；(112,122) are switched at least one, Switching power provides source so that providing any one of the supply voltage based on envelope tracking mode or the supply voltage based on mean power tracking mode to multiple power amplifiers (111,121) respectively.
Description
Technical field
The utility model relates to power amplifier module and high-frequency models.
Background technique
In recent years, in the mobile communication terminal of mobile phone etc., the HSUPA of the standard of the data communication as high speed
(High Speed Uplink Packet Access), LTE (Long Term Evolution) or LTE-Advanced etc.
Modulation system be used.In this communication standard, amplify the power amplification mould of RF (Radio Frequency) signal
Higher linear is needed in block.In addition, in this communication standard, in order to improve communication speed, the amplitude variations of RF signal
Range (dynamic range) the case where broadening it is more.Also, it is linear in order to be improved in the biggish situation of dynamic range
Property, higher supply voltage is needed, there are the trend that the consumption power in power amplifier module becomes larger.It is back with this thing
Scape, proposing in No. 2014/0111178 specification of U.S. Patent Application Publication No. a kind of can cut the action mode of amplifier
It is changed to the power amplifier module of any one of envelope tracing mode, mean power tracing mode and turn model.It is another
Aspect, the technology as the raising for realizing the communication speed in mobile communication terminal, it is known that carry the different multiple components of frequency band
Wave convergence and the carrier wave polymerization for carrying out while receiving and dispatching RF signal as a communication line.
Citation
Patent document
Patent document 1: No. 2014/0111178 specification of U.S. Patent Application Publication No.
But No. 2014/0111178 power amplifier module described in the specification of U.S. Patent Application Publication No. not with load
Wave polymerization corresponds to.Therefore, uplink carrier polymerization movement is carried out in order to restrain multiple component carriers, needs to put according to each
The amplifier of big component carrier tracks power circuit to provide the envelope of supply voltage.For example, being carried to restrain three components
Wave carries out uplink carrier polymerization movement, needs three envelopes tracking power circuits, is not avoided that power amplifier module
Circuit scale amplification and cost increase.
Utility model content
Therefore, the utility model is in view of this problem, project, realizes the contracting of the circuit scale of power amplifier module
Small and cost is reduced.
In order to solve above-mentioned problem, power amplifier module related with the utility model has: multiple power amplifiers；
With at least one switch, Switching power provides source, is based on envelope track side so that providing respectively to multiple power amplifiers
Any one of the supply voltage of formula or supply voltage based on mean power tracking mode.
High-frequency model related with the utility model, has:
Power amplifier module recited above；With
Multiple filter circuits,
Multiple filter circuits have respectively:
Multiple duplexers；With
A pair of of RF switch is selected from multiple duplexers from any one output of multiple power amplifiers
Duplexer corresponding to the frequency band of RF signal optionally switches the path of the RF signal, so that the RF signal passes through
The duplexer being selected.
According to power amplifier module related with the utility model, the diminution and cost that can be realized circuit scale subtract
It is few.
Detailed description of the invention
Fig. 1 is the explanatory diagram for indicating the circuit structure of high-frequency model related with the embodiments of the present invention 1.
Fig. 2 is the explanatory diagram for indicating the circuit structure of high-frequency model related with the embodiments of the present invention 2.
Fig. 3 is the explanatory diagram for indicating the circuit structure of high-frequency model related with the embodiments of the present invention 3.
Fig. 4 is to indicate that the circuit structure of related with the variation of the embodiments of the present invention 1 high-frequency model is said
Bright figure.
Fig. 5 is the circuit structure for indicating high-frequency model related with other variations of the embodiments of the present invention 1
Explanatory diagram.
Fig. 6 is the mould for indicating to be equipped with each structural element of high-frequency model related with the embodiments of the present invention 1
The explanatory diagram of block substrate.
Fig. 7 is the explanatory diagram for indicating the circuit structure of high-frequency model related with the embodiments of the present invention 4.
Fig. 8 is determining for the supply voltage in the case where indicating the progress carrier wave polymerization movement of the embodiments of the present invention 1
Determine the flow chart of method.
Symbol description-
10A~10F ... high-frequency model 20 ... baseband I C 30 ... RFIC 40 ... power amplifier module 50 ... front-end module
60 ... antennas 70,80 ... power circuit 90~92 ... signal processing ICs 100,101 ... module substrate, 110,120,130 ... function
Rate amplifying circuit 111,121,131 ... amplifier, 112,122,132 ... switch, 140,150,160 ... low-noise amplifier
210,220,230 ... duplexer, 310,320,330,340 ... RF switch 400 ... homodromy 500 ... triplexer 610,
620 ... filter circuits 710,720 ... switches 810,820 ... band pass filter circuits.
Specific embodiment
Hereinafter, being illustrated referring to each figure to each embodiment of the utility model.Here, the circuit elements of same symbol
Part indicates same circuit element, and the repetitive description thereof will be omitted.
Fig. 1 is the explanatory diagram for indicating the circuit structure of high-frequency model 10A related with the embodiments of the present invention 1.
High-frequency model 10A is for carrying out the multiple RFs different from frequency band is received and dispatched between base station in mobile communication terminals such as mobile phones
The case where module of the processing of signal, there is also referred to as transceiver modules.
High-frequency model 10A is configured to service band mutually different two component carriers CC1, CC2 to carry out carrier wave
Polymerization movement.Here, the RF signal of the uplink of component carrier CC1 is known as sending signal Tx1, the RF of downgoing line is believed
It is known as to receive signal Rx1.In addition, the RF signal of the uplink of component carrier CC2 is known as to send signal Tx2, by downlink
The RF signal of route is known as receiving signal Rx2.
In addition, two component carriers CC1, CC2 can be the combination of the different frequency bands in same communication standard, or can also
To be LTE and 5G (the 5th Generation Mobile Communication System), Wi-Fi and " Bluetooth " (registered trademark) or LTE and LAA
The combination of distinct communication standards such as (License-Assisted Access using LTE, the accesses of authorization auxiliary).Following table 1
In illustrate can as two component carriers CC1, CC2 LTE two frequency bands combination.In addition, being illustrated in following table 2
It can be as the combination of the communication standard of two component carriers CC1, CC2.
[table 1]
| CC1 | CC2 | CC1 | CC2 | CC1 | CC2 |
| Band 1 | Band 3 | Band 3 | Band 5 | Band 4 | Band 46 |
| Band 1 | Band 5 | Band 3 | Band 7 | Band 5 | Band 7 |
| Band 1 | Band 8 | Band 3 | Band 8 | Band 5 | Band 17 |
| Band 1 | Band 11 | Band 3 | Band 19 | Band 5 | Band 30 |
| Band 1 | Band 18 | Band 3 | Band 20 | Band 5 | Band 40 |
| Band 1 | Band 19 | Band 3 | Band 26 | Band 5 | Band 66 |
| Band 1 | Band 20 | Band 3 | Band 28 | Band 7 | Band 8 |
| Band 1 | Band 21 | Band 3 | Band 41 | Band 7 | Band 20 |
| Band 1 | Band 26 | Band 3 | Band 42 | Band 7 | Band 28 |
| Band 1 | Band 28 | Band 3 | Band 46 | Band 8 | Band 39 |
| Band 1 | Band 40 | Band 4 | Band 5 | Band 12 | Band 30 |
| Band 1 | Band 41 | Band 4 | Band 7 | Band 12 | Band 66 |
| Band 1 | Band 42 | Band 4 | Band 12 | Band 13 | Band 66 |
| Band 2 | Band 5 | Band 4 | Band 13 | Band 19 | Band 42 |
| Band 2 | Band 13 | Band 4 | Band 17 | Band 28 | Band 42 |
[table 2]
| CC1 | CC2 |
| LTE | 5G New Radio |
| LTE | Bluetooth |
| LTE | Wi-Fi |
| 5GNew Radio | Wi-Fi |
| 5GNew Radio | Bluetooth |
| Wi-Fi | Bluetooth |
| LTE | E-LAA(LAA) |
| E-LAA(LAA) | 5G New Radio |
High-frequency model 10A has: baseband I C (Integrated Circuit, integrated circuit) 20, RFIC (Radio
Frequency Integrated Circuit, RF IC) 30, power amplifier module 40, front-end module 50 and power supply
Circuit 70,80.
Baseband I C20 is modulated the input signal of sound, data etc. based on defined modulation system and exports modulation
Signal.In addition, baseband I C20 demodulates modulated signal based on defined modulation system.The frequency of modulated signal is, for example,
Several MHz to several hundred MHz or so.
RFIC30 according to the modulated signal exported from baseband I C20, generate transmission signal Tx1 for being transmitted wirelessly,
Tx2.The frequency for sending signal is, for example, several hundred MHz to tens GHz or so, has different bands according to communication standard, frequency band
It is wide.In addition, reception signal Rx1, Rx2 for exporting from power amplifier module 40 are demodulated into modulated signal by RFIC30.Further,
The power circuit 70,80 that RFIC30 opposite direction power amplifier module 40 provides supply voltage is controlled.In addition, power circuit 70,
80 can also replace RFIC30 and be controlled by baseband I C20.
Power amplifier module 40 has: carrying out the power amplification circuit 110 of power amplification, to transmission to signal Tx1 is sent
Signal Tx2 carries out the power amplification circuit 120 of power amplification, to the low-noise amplifier for receiving signal Rx1 progress power amplification
140, to the low-noise amplifier 150 for receiving signal Rx2 progress power amplification.Front-end module 50 has duplexer (duplexer)
210,220 and homodromy (diplexer) 400.Duplexer 210 believes the transmission signal Tx1 of component carrier CC1 and reception
Number Rx1 carries out partial wave.Duplexer 220 carries out partial wave to the transmission signal Tx2 and reception signal Rx2 of component carrier CC2.It is double in the same direction
Work device 400 carries out partial wave to component carrier CC1, CC2.
Duplexer 210 and homodromy 400 are passed through by the transmission signal Tx1 of 110 power amplification of power amplification circuit,
It is sent from antenna 60.In addition, passing through homodromy 400 and duplexer 210, warp from the received reception signal Rx1 of antenna 60
RFIC30 is input by low-noise amplifier 140.Passed through by the transmission signal Tx2 of 120 power amplification of power amplification circuit
Duplexer 220 and homodromy 400 are sent from antenna 60.In addition, passing through from the received reception signal Rx2 of antenna 60 same
To duplexer 400 and duplexer 220, RFIC30 is input into via low-noise amplifier 150.
Power circuit 70 is to provide the electricity of supply voltage to power amplification circuit 110,120 by envelope tracking mode
Source provides source.In envelope tracking mode, according to the amplitude level for the RF signal for being input to power amplification circuit 110,120,
To control the supply voltage for being supplied to power amplification circuit 110,120.Power circuit 70 is, for example, based on providing from RFIC30
Signal is controlled, the envelope that cell voltage Vbat carries out buck and provides it to power amplification circuit 110,120 is tracked
Power circuit.Here, cell voltage Vbat is, for example, mentioning from batteries such as the lithium ion batteries for being equipped on mobile communication terminal
Voltage supplied.On the other hand, power circuit 80 is to provide electricity to power amplification circuit 110,120 by mean power tracking mode
The power supply of source voltage provides source.In mean power tracking mode, according to average output power, power amplification is supplied to control
The supply voltage of circuit 110,120.Power circuit 80 is, for example, based on the control signal provided from RFIC30, according to average output
Power carries out buck to cell voltage Vbat and provides it to the DC/DC converter (mean power of power amplification circuit
Track power circuit).
Power amplification circuit 110 has: amplifier 111, carries out power amplification to signal Tx1 is sent；With switch 112, cut
It changes power supply and provides source so that any one selected from power circuit 70,80 receives power supply offer.Amplifier 111 is by opening
It closes 112 and provides source from power supply and power supply offer is provided.On the other hand, power amplification circuit 120 has: to send signal Tx2 into
The amplifier 121 and Switching power of row power amplification provide source so that any one selected from power circuit 70,80 connects
The switch 122 provided by power supply.Amplifier 121 provides source from power supply by switch 122 and receives power supply offer.Amplifier 111,
121 transistor units such as comprising heterojunction bipolar transistor.Transistor unit can also be connected by multistage.Switch 112,
122 semiconductor switch comprising field effect transistor etc., pass through the switching of the on-state and off-state of semiconductor switch
Source is provided to optionally switch power supply.Power supply based on switch 112,122 provides switching in for source and control line is omitted in Fig. 1
Diagram, such as controlled by baseband I C20 or RFIC30.
Power amplification circuit 110,120 can be polymerize by carrier wave, while multiple RF signals that output band is different.This
When, pass through envelope tracking mode to any one selected from two power amplification circuits 110,120 from power circuit 70
Power amplification circuit provides supply voltage, electric to the power amplification selected by mean power tracking mode from power circuit 80
Power amplification circuit other than road provides supply voltage.For example, if being put as the power that power supply provides is received from power circuit 70
Big circuit, power amplification circuit 110 are selected, then 112 Switching power of switch provides source so that power circuit 70 is put for power
The power supply of big circuit 110 provides source.At this point, 122 Switching power of switch provides source so that power circuit 80 is power amplification electricity
The power supply on road 120 provides source.In addition, for example, if receiving the power amplification circuit that power supply provides, power as from power circuit 70
Amplifying circuit 120 is selected, then 122 Switching power of switch provides source so that power circuit 70 is power amplification circuit 120
Power supply provides source.At this point, 112 Switching power of switch provides source so that power circuit 80 is the power supply of power amplification circuit 110
Offer source.
In this way, passing through envelope tracking mode to the power amplification circuit for carrying out carrier wave polymerization movement from power circuit 70
110, any one among 120 provides supply voltage, on the other hand, from power circuit 80 by mean power tracking mode come
Supply voltage is provided.According to this circuit structure, do not need in order to carry out carrier wave polymerization movement power amplification circuit 110,
120 provide supply voltages and prepare two envelopes tracking power circuits.Replace two envelope tracking power circuits, prepares one
A envelope tracking power circuit and a mean power track power circuit, therefore can be realized power amplifier module 40
Circuit scale diminution and cost reduce.
In addition, in envelope tracking mode, control supply voltage so that power amplification circuit 110,120 relative to
Input power is imitated in wider input power range to be acted under the higher state of efficiency near saturation power
Rate is higher.It is accompanied by this, exists defeated from the power amplification circuit of the offer for receiving supply voltage by envelope tracking mode
The drawbacks of interference wave out also becomes larger.Therefore, preferably receive electricity to by envelope tracking mode when carrier wave polymerization is acted
The output power of the power amplification circuit of the offer of source voltage is inhibited, and receives electricity using by mean power tracking mode
The power amplification circuit of the offer of source voltage compensates the suppressed power.Thereby, it is possible to reduce the influence of interference wave.This
Outside, in order to compensate for the repressed output of the power amplification circuit for the offer for receiving supply voltage by envelope tracking mode
Power moves the power amplification circuit for the offer for receiving supply voltage by mean power tracking mode expeditiously
Make, so that the output power of antenna 60 can be adjusted to defined output.As an example, can also will by envelope with
Track mode is for example set as 23dBm to receive the output power of the power amplification circuit of the offer of supply voltage, will be by average
Power tracking mode is for example set as 17dBm to receive the output power of the power amplification circuit of the offer of supply voltage, so that
The output power for obtaining antenna 60 is, for example, 24dBm.
In addition, power circuit 70 is not limited to envelope tracking power circuit, such as it is also possible to that envelope can be passed through
Any way of line tracking mode and mean power tracking mode provides the power circuit of supply voltage.
Fig. 2 is the explanatory diagram for indicating the circuit structure of high-frequency model 10B related with the embodiments of the present invention 2.
High-frequency model 10B is configured to service band mutually different three component carriers CC1, CC2, CC3 to carry out carrier wave polymerization
Movement.Here, the RF signal of the uplink of component carrier CC3 is known as sending signal Tx3, the RF signal of downgoing line is claimed
To receive signal Rx3.The power amplifier module 40 of high-frequency model 10B is being also equipped with power in addition to power amplification circuit 110,120
Amplifying circuit 130 is also equipped with 160 this respect of low-noise amplifier in addition to low-noise amplifier 140,150, with high-frequency model 10A
Power amplifier module 40 it is different.The front-end module 50 of high-frequency model 10B is being also equipped with duplexer in addition to duplexer 210,220
230 this respects, it is different from the front-end module 50 of high-frequency model 10A.The front-end module 50 of high-frequency model 10B is replacing diplex
Device 400 and have 500 this respect of triplexer, it is different from the front-end module 50 of high-frequency model 10A.
Duplexer 230 carries out partial wave to the transmission signal Tx3 and reception signal Rx3 of component carrier CC3.Triplexer 500 is right
Component carrier CC1, CC2, CC3 carry out partial wave.Passed through by power amplification circuit 110 by the transmission signal Tx1 of power amplification
Duplexer 210 and triplexer 500 are sent from antenna 60.In addition, passing through triplexer from the received reception signal Rx1 of antenna 60
500 and duplexer 210, RFIC30 is input into via low-noise amplifier 140.By power amplification circuit 120 by
The transmission signal Tx2 of power amplification is sent by duplexer 220 and triplexer 500 from antenna 60.In addition, being connect from antenna 60
The reception signal Rx2 of receipts is input by triplexer 500 and duplexer 220 via low-noise amplifier 150
RFIC30.Duplexer 230 and triplexer are passed through by the transmission signal Tx3 of power amplification by power amplification circuit 130
500, it is sent from antenna 60.In addition, passing through triplexer 500 and duplexer 230, warp from the received reception signal Rx3 of antenna 60
RFIC30 is input by low-noise amplifier 160.
Power amplification circuit 130 has: amplifier 131, carries out power amplification to signal Tx3 is sent；With switch 132,
Switching power provides source so that any one selected from power circuit 70,80 receives power supply offer.Amplifier 131 passes through
Switch 132 provides source from power supply and receives power supply offer.The member of the transistor such as comprising heterojunction bipolar transistor of amplifier 131
Part.Transistor unit can also be connected by multistage.Switch 132 includes the semiconductor switch of field effect transistor etc., by partly leading
The switching of the on-state and off-state of body switch provides source to optionally switch power supply.Power supply based on switch 132
The switching in offer source is for example controlled by baseband I C20 or RFIC30.
Power amplification circuit 110,120,130 can be believed by carrier wave polymerization come the different multiple RF of output band simultaneously
Number.At this point, from power circuit 70 by envelope tracking mode to selecting from three power amplification circuits 110,120,130
Any one power amplification circuit provides supply voltage, from power circuit 80 by mean power tracking mode to being selected
Power amplification circuit other than power amplification circuit provides identical supply voltage.For example, if receiving as from power circuit 70
Power supply provide power amplification circuit and select power amplification circuit 110, then 112 Switching power of switch provide source so that power supply
Circuit 70 provides source for the power supply of power amplification circuit 110.At this point, 122 Switching power of switch provides source so that power circuit
80 provide source for the power supply of power amplification circuit 120.Similarly, 132 Switching power of switch provides source so that power circuit 80
Power supply for power amplification circuit 130 provides source.Power circuit 80 provides identical power supply electricity to power amplification circuit 120,130
Pressure.Power circuit 80 can also for example follow the higher power amplification circuit of output power among power amplification circuit 120,130
Mean power supply voltage is provided.In addition, for example, if receiving the power amplification electricity that power supply provides as from power circuit 70
Road and select power amplification circuit 120, then 122 Switching power of switch provide source so that power circuit 70 be power amplification circuit
120 power supply provides source.At this point, 112 Switching power of switch provides source so that power circuit 80 is power amplification circuit 110
Power supply provides source.Similarly, 132 Switching power of switch provides source so that power circuit 80 is the electricity of power amplification circuit 130
Source provides source.Power circuit 80 provides identical supply voltage to power amplification circuit 110,130.Power circuit 80 for example may be used
Power supply electricity is provided to follow the mean power of the higher power amplification circuit of output power among power amplification circuit 110,130
Pressure.In addition, for example, if selecting power amplification circuit as the power amplification circuit for receiving power supply offer from power circuit 70
130, then 132 Switching power of switch provides source so that power circuit 70 provides source for the power supply of power amplification circuit 130.This
When, 112 Switching power of switch provides source so that power circuit 80 provides source for the power supply of power amplification circuit 110.Similarly,
122 Switching power of switch provides source so that power circuit 80 provides source for the power supply of power amplification circuit 120.Power circuit 80
Identical supply voltage is provided to power amplification circuit 110,120.Power circuit 80 can also for example follow power amplification circuit
110, the mean power of the higher power amplification circuit of output power provides supply voltage among 120.
In this way, passing through envelope tracking mode to the power amplification circuit for carrying out carrier wave polymerization movement from power circuit 70
110, any one among 120,130 provides supply voltage, from power circuit 80 by mean power tracking mode to residue
Power amplification circuit provide supply voltage.According to this circuit structure, do not need to polymerize dynamic work to progress carrier wave
Rate amplifying circuit 110,120,130 provides supply voltage, prepares three envelope tracking power circuits.Due to replacing three envelopes
Line tracks power circuit, prepares an envelope tracking power circuit and a mean power tracking power circuit, therefore
The diminution and cost that can be realized the circuit scale of power amplifier module 40 are reduced.
In addition, the number of power circuit 80 does not need be one, for example, can also with pass through mean power track side
Formula is identical quantity come the number for providing the power amplification circuit of supply voltage.Thereby, it is possible to further increase efficiency.
Fig. 3 is the explanatory diagram for indicating the circuit structure of high-frequency model 10C related with the embodiments of the present invention 3.
The front-end module 50 of high-frequency model 10C is having multiple filter circuits 610,620 this respects, the front end with high-frequency model 10A
Module 50 is different.It is illustrated centered on the difference of embodiment 1,3, is omitted specifically for common aspect
It is bright.
Filter circuit 610 filters the RF signal (send signal Tx1 and receive signal Rx1) of component carrier CC1
Wave.Filter circuit 610 have multiple duplexer 210-1,210-2 ..., 210-N and a pair of RF switch 310,320.A pair of of RF
One among switch 310,320 be configured in multiple duplexer 210-1,210-2 ..., 210-N input rf signal one
Side, another be configured in from multiple duplexer 210-1,210-2 ..., 210-N output RF signal side.Component carrier CC1
The frequency band of RF signal can be changed by being selected from N number of frequency band.A pair of of RF switch 310,320 is from multiple duplexers
210-1,210-2 ..., select in 210-N component carrier CC1 RF signal the frequency band selected corresponding to duplexer, choosing
Switch to selecting property the path of RF signal so that RF signal passes through the duplexer that is selected.Pass through power amplification circuit 110 as a result,
And by the transmission signal Tx1 of power amplification by RF switch 320, from multiple duplexer 210-1,210-2 ..., select in 210-N
Duplexer, RF switch 310 and homodromy 400, from antenna 60 send.In addition, from the received reception signal of antenna 60
Rx1 by homodromy 400, RF switch 310, from multiple duplexer 210-1,210-2 ..., the duplexer that selects in 210-N
And RF switch 320, RFIC30 is input into via low-noise amplifier 140.Here, the integer that N is 2 or more.
Filter circuit 620 filters the RF signal (send signal Tx2 and receive signal Rx2) of component carrier CC2
Wave.Filter circuit 620 have multiple duplexer 220-1,220-2 ..., 220-N and a pair of RF switch 330,340.A pair of of RF
One among switch 330,340 be configured in multiple duplexer 220-1,220-2 ..., 220-N input rf signal one
Side, another be configured in from multiple duplexer 220-1,220-2 ..., 220-N output RF signal side.Component carrier CC2
The frequency band of RF signal can be changed by being selected from N number of frequency band.A pair of of RF switch 330,340 is from multiple duplexers
220-1,220-2 ..., select in 220-N component carrier CC2 RF signal the frequency band selected corresponding to duplexer, choosing
Switch to selecting property the path of RF signal so that RF signal passes through the duplexer that is selected.Pass through power amplification circuit 120 as a result,
And by the transmission signal Tx2 of power amplification by RF switch 340, from multiple duplexer 220-1,220-2 ..., select in 220-N
Duplexer, RF switch 330 and homodromy 400, from antenna 60 send.In addition, from the received reception signal of antenna 60
Rx2 by homodromy 400, RF switch 330, from multiple duplexer 220-1,220-2 ..., the duplexer that selects in 220-N
And RF switch 340, RFIC30 is input into via low-noise amplifier 150.
Power amplification circuit 110,120 can be by carrier wave polymerization come the different multiple RF signals of output band simultaneously.This
Outside, since the frequency band of the respective RF signal of multiple component carrier CC1, CC2 can change, carrier wave can be carried out for frequency band
Polymerization.
For convenience of description, in embodiment 3, the number for illustrating power amplification circuit is two situations, but
The number of power amplification circuit is also possible to three or more.In this case, the number and power amplification circuit of filter circuit
Number it is identical.Each filter circuit has multiple duplexers and a pair of RF switch.A pair of of RF switch is selected from multiple duplexers
Duplexer corresponding to the frequency band from any one RF signal exported of multiple power amplification circuits is selected, RF is optionally switched
The path of signal is so that RF signal passes through the duplexer that is selected.
Fig. 4 is the circuit structure for indicating high-frequency model 10D related with the variation of the embodiments of the present invention 1
Explanatory diagram.High-frequency model 10D has 90 this respect of signal processing IC in substituent group band IC20 and RFIC30, with high-frequency model
10A is different.That is, baseband I C20 and RFIC30 is made of different chips in high-frequency model 10A, and in high-frequency model 10D
In, these functions are made of a chip.
Fig. 5 is the circuit knot for indicating high-frequency model 10E related with other variations of the embodiments of the present invention 1
The explanatory diagram of structure.High-frequency model 10E has signal processing IC 91,92 this respects replacing signal processing IC 90, with high frequency mould
Block 10D is different.That is, signal processing IC is made of a chip in high-frequency model 10D, and in high-frequency model 10E, signal
Processing IC is made of according to each component carrier CC1, CC2 different chips.As a result, for example in the logical of component carrier CC1, CC2
In the case where the quasi- difference of beacon, signal processing IC 91,92 can be set as being suitable for the structure of each communication standard.
In addition, illustrating that power circuit 70,80 is not built in function in Fig. 1 into high-frequency model 10A~10E shown in fig. 5
The example of rate amplification module 40 can also replace this, and power circuit 70,80 is built in power amplifier module 40.
Fig. 6 is each structural element for indicating to be equipped with high-frequency model 10A related with the embodiments of the present invention 1
The explanatory diagram of module substrate.Specifically, Fig. 6 indicates power amplification circuit 110,210 quilt of low-noise amplifier 140 and duplexer
It is equipped on a module substrate 100 and power amplification circuit 120, low-noise amplifier 150 and duplexer 220 is equipped on
The appearance of one module substrate 101.In addition, the structure of module substrate shown in fig. 6 is example, each structure of high-frequency model 10A
Which module substrate is element be equipped on and be not specifically limited.For example, if by taking module substrate 100 as an example, low noise amplification
Device 140 or duplexer 210 can also be equipped on the substrate different from module substrate 100.In addition, power amplification circuit 110,
120, low-noise amplifier 140,150 and duplexer 210,220 can also be equipped on a module substrate.
Fig. 7 is the explanatory diagram for indicating the circuit structure of high-frequency model 10F related with the embodiments of the present invention 4.
Above-mentioned high-frequency model 10A~10E is that signal is different from the frequency band of signal is received, is divided into transmission according to frequency band according to sending
Structure in the case where FDD (Frequency Division Duplex, frequency division duplex) mode of signal and reception signal.Separately
On the one hand, high-frequency model 10F be according to send signal with receive the frequency band of signal it is equal, divided according to the time transmission signal and
Receive the structure in the case where TDD (Time Division Duplex, time division duplex) mode of signal.
Specifically, high-frequency model 10F has switch 710,720, has bandpass filter in substitution duplexer 210,220
Circuit 810,820 this respects, it is different from high-frequency model 10A.
Switch 710,720 is the switch of 1 input 2 output respectively.Switch 710 is when sending the transmission of signal Tx1 by power
It is connected between the output and band pass filter circuit 810 of amplifier 111, when receiving the reception of signal Rx1 by bandpass filter
It is connected between circuit 810 and the input of low-noise amplifier 140.In this way, switch 710 switches according to the time sends signal Tx1
With the path for receiving signal Rx1.Switch 720 filters the output of power amplifier 121 and band logical when sending the transmission of signal Tx2
It is connected between wave device circuit 820, when receiving the reception of signal Rx2 by band pass filter circuit 820 and low-noise amplifier 150
Input between connect.In this way, switch 720 switches the path for sending signal Tx2 and receiving signal Rx2 according to the time.
Band pass filter circuit 810 has the frequency characteristic for making to send that signal Tx1 and reception signal Rx1 pass through.According to
Time provides any one for sending signal Tx1 or reception signal Rx1 to band pass filter circuit 810.Bandpass filter electricity
Road 820 has the frequency characteristic for making to send that signal Tx2 and reception signal Rx2 pass through.According to the time to band pass filter circuit
820 provide any one for sending signal Tx2 or reception signal Rx2.In this way, even if high-frequency model 10F is according to TDD mode
In the case where, the diminution and cost that also can be realized the circuit scale of power amplifier module 40 are reduced.
In addition, switch 710,720 and band pass filter circuit 810,820 are contained in front-end module 50 in Fig. 7,
But switch 710,720 and band pass filter circuit 810,820 can be equipped on the module substrate of front-end module 50, can also be with
It is equipped on the module substrate of power amplifier module 40, or the substrate different from these substrates can also be equipped on.In addition,
Band pass filter circuit 810,820 has the frequency band for making to send that signal and reception signal pass through, and can also replace band logical
Filter circuit and by low-pass filter circuit etc., other filter circuits are constituted.
Next, being supplied to an example of the method for the mode of the supply voltage of each power amplifier to switching referring to Fig. 8
Son is illustrated.Fig. 8 is the supply voltage in the case where indicating the progress carrier wave polymerization movement of the embodiments of the present invention 1
The flow chart of determining method.In addition, the control of supply voltage described below can for example pass through baseband I C20 or RFIC30
It carries out, or can also be carried out by signal processing IC 90~92.
Firstly, the 1st base station is indicated to power amplifier if high-frequency model 10A and the communication of the 1st base station (BS1) start
The level P1 (step S100) of the output power of 111 requests.In level P1 than defined threshold X (for example, more than ten dBm or so)
In the case where big (step S101: yes), the supply voltage (step according to envelope tracking mode is provided to power amplifier 111
S102), communication (step S103) is established.
Next, if the 1st base station instruction uplink carrier polymerization movement (step S104), power amplifier 121 is examined
Survey new base station (step S105).The 2nd base station (BS2) being detected indicates the output power requested to power amplifier 121
Level P2 (step S106).In the case where level P2 is bigger than defined threshold X (step S107: yes), to level P1 with
The size of level P2 is compared.In the case where level P1 is bigger than level P2 (step S108: yes), to power amplifier 111
Supply voltage according to envelope tracking mode is provided, provides the electricity according to mean power tracking mode to power amplifier 121
Source voltage (step S109) establishes communication (step S110).On the other hand, (the step in the case where level P1 is smaller than level P2
S108: no), the supply voltage according to mean power tracking mode is provided to power amplifier 111, is mentioned to power amplifier 121
For the supply voltage (step S111) according to envelope tracking mode, communication (step S110) is established.In addition, being advised in level P2 ratio
In the case that fixed threshold X is small (step S107: no), the size of comparative level P1 Yu level P2 are not needed, to power amplifier
121 provide the supply voltage (step S112) according to mean power tracking mode, establish communication (step S110).
On the other hand, in the case where level P1 is smaller than defined threshold X (step S101: no), to power amplifier 111
Supply voltage (step S113) according to mean power tracking mode is provided, communication (step S114) is established.
Next, in the same manner as above-mentioned process, if the instruction uplink carrier polymerization of the 1st base station acts (step
S115), then power amplifier 121 detects new base station (step S116).The 2nd base station being detected is indicated to power amplifier
The level P2 (step S117) of the output power of 121 requests.(the step in the case where level P2 is bigger than defined threshold X
S118: yes), the size of comparative level P1 Yu level P2 are not needed, is provided to power amplifier 121 according to envelope tracking mode
Supply voltage (step S119), establish communication (step S110).On the other hand, the feelings smaller than defined threshold X in level P2
Under condition (step S118: no), level P1 is compared with the size of level P2.In the case where level P1 is bigger than level P2
(step S120: yes) provides the supply voltage according to envelope tracking mode to power amplifier 111, to power amplifier 121
Supply voltage (step S121) according to mean power tracking mode is provided, communication (step S110) is established.On the other hand, in electricity
In the case that flat P1 is smaller than level P2 (step S120: no), provide to power amplifier 111 according to mean power tracking mode
Supply voltage provides the supply voltage (step S122) according to envelope tracking mode to power amplifier 121, establishes communication
(step S110).
By above-mentioned process, provide to the lesser power amplifier of output power levels from base station requests according to average
The supply voltage of power tracking mode is provided to the biggish power amplifier of the output power levels according to envelope tracking mode
Supply voltage.In addition, the switching of the mode of these supply voltages as described above, for example by baseband I C20, RFIC30 or
The switching of 90~92 pairs of switches of signal processing IC 112,122 is controlled to carry out.
In addition, the feelings almost equal in level from base station to power amplifier 111,121 P1, P2 of the output power requested from
Under condition, such as it can also be initially set so as to any one power amplifier and be provided according to envelope tracking mode
Supply voltage provides the supply voltage according to mean power tracking mode to another power amplifier.
In addition, illustrating that power amplifier 121 examines 2nd base station different from the 1st base station in above-mentioned process
The example of survey, but power amplifier 121 can also be communicated with the 1st base station for being equal to power amplifier 111.In the situation
Under, the 1st base station indicates the level P2 for the output power requested to power amplifier 121.
In addition, the number for illustrating power amplification circuit respectively is two, three in above-mentioned embodiment 1,2,3,4
A situation, but the number of power amplification circuit is also possible to four or more.The number of multiple power amplification circuits is being set as M
When, power circuit 70 is electric to any one power amplification selected from M power amplification circuit by envelope tracking mode
Road provides supply voltage.Power circuit 80 selects function among M power amplification circuit by mean power tracking mode
(M-1) a power amplification circuit other than rate amplifying circuit provides supply voltage.Here, M is 2 or more integer.M power is put
Big circuit has Switching power respectively and provides source so that any one selected from power circuit 70,80 receives power supply offer
Switch.In addition, M power amplification circuit also can be by carrier wave polymerization come the different multiple RF signals of output band simultaneously.
In addition, for convenience of description, it is desirable to which noticing, into Fig. 7, to be omitted in Fig. 1 makes the circuit of prime and the electricity of rear class
The diagram of the match circuit of impedance matching between road.In addition, above-mentioned each embodiment is used to make the understanding of the utility model
It is easy, is not used to limited interpretation the utility model.The utility model can without departing from its main purpose in the case of be changed or
Person improves, and also includes its equivalent in the utility model.That is, those skilled in the art joined suitably to embodiment
As long as embodiment obtained from design alteration has the feature of the utility model, it is also contained in the scope of the utility model.
What circuit element that embodiment has and its configuration etc. were not limited to illustrate, also can suitably it change.Each embodiment party
The circuit element that formula has can technically as far as possible in the range of be combined, by these obtained embodiments of combination
As long as the feature comprising the utility model, is also contained in the scope of the utility model.
Claims (6)
1. a kind of power amplifier module, which is characterized in that have:
M power amplifier, wherein M is 2 or more integer；With
M switch, Switching power provide source, are based on envelope track side so that providing respectively to the M power amplifiers
Any one of the supply voltage of formula or supply voltage based on mean power tracking mode.
2. power amplifier module according to claim 1, which is characterized in that
The M switching power supplys provide source, so as to any one power selected from the M power amplifiers
Amplifier provides the supply voltage based on envelope tracking mode, described in being selected among the M power amplifiers
Power amplifier other than power amplifier provides the supply voltage based on mean power tracking mode.
3. power amplifier module according to claim 1 or 2, which is characterized in that
The M power amplifiers are by carrier wave polymerization come the different multiple RF signals of output band simultaneously.
4. power amplifier module according to claim 1 or 2, which is characterized in that
The output power ratio for receiving the power amplifier of the offer of the supply voltage based on the envelope tracking mode connects
Output power by the power amplifier of the offer of the supply voltage based on the mean power tracking mode is high.
5. power amplifier module according to claim 3, which is characterized in that
The output power ratio for receiving the power amplifier of the offer of the supply voltage based on the envelope tracking mode connects
Output power by the power amplifier of the offer of the supply voltage based on the mean power tracking mode is high.
6. a kind of high-frequency model, which is characterized in that have:
Power amplifier module described in any one in claim 1 to 5；With
Multiple filter circuits,
Multiple filter circuits have respectively:
Multiple duplexers；With
A pair of of RF switch selects any one RF letter exported from the M power amplifiers from multiple duplexers
Number frequency band corresponding to duplexer, optionally switch the path of the RF signal so that the RF signal pass through it is selected
The duplexer selected out.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017078906 | 2017-04-12 | ||
| JP2017-078906 | 2017-04-12 | ||
| JP2018-009580 | 2018-01-24 | ||
| JP2018009580A JP2018182720A (en) | 2017-04-12 | 2018-01-24 | Power amplifier module and high frequency module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208424343U true CN208424343U (en) | 2019-01-22 |
Family
ID=64276315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820497150.1U Active CN208424343U (en) | 2017-04-12 | 2018-04-09 | Power amplifier module and high-frequency model |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2018182720A (en) |
| CN (1) | CN208424343U (en) |
| TW (1) | TW201906313A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020145613A (en) | 2019-03-07 | 2020-09-10 | 株式会社村田製作所 | High frequency circuit and communication device |
| JP2021010064A (en) | 2019-06-28 | 2021-01-28 | 株式会社村田製作所 | High frequency circuit and communication device |
| WO2021241233A1 (en) * | 2020-05-25 | 2021-12-02 | 株式会社村田製作所 | Tracker module, power amplification module, high frequency module, and communication device |
| CN115735328A (en) * | 2020-06-23 | 2023-03-03 | 株式会社村田制作所 | High-frequency circuit and communication device |
| WO2023233735A1 (en) * | 2022-06-01 | 2023-12-07 | 株式会社村田製作所 | Mean power tracking module, mean power tracking circuit, communication device, and power supply voltage supply method |
-
2018
- 2018-01-24 JP JP2018009580A patent/JP2018182720A/en active Pending
- 2018-04-09 CN CN201820497150.1U patent/CN208424343U/en active Active
- 2018-04-11 TW TW107112416A patent/TW201906313A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018182720A (en) | 2018-11-15 |
| TW201906313A (en) | 2019-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN208424343U (en) | Power amplifier module and high-frequency model | |
| CN108712177A (en) | Power amplifier module and high-frequency model | |
| KR102665202B1 (en) | Wireless transceiver with switch to reduce harmonic leakage | |
| CN108199728B (en) | Multi-way selector switch, radio frequency system and wireless communication equipment | |
| CN108649971B (en) | Terminal equipment | |
| US11750151B2 (en) | Apparatus and methods for biasing of power amplifiers | |
| US12057866B2 (en) | Radio frequency front end module including supplemental filter | |
| CN102752010B (en) | A kind of transceiver module for the base station that communicates | |
| US11784620B2 (en) | Adaptive degeneration circuits | |
| KR20220001480A (en) | Dual connectivity power amplifier system | |
| US20240048163A1 (en) | Radio frequency circuit and communication device | |
| US20240313727A1 (en) | Variable-gain amplifiers with configurable impedance circuits | |
| CN110504986B (en) | Transmit-receive isolation circuit, TDD wireless transmit-receive circuit and base station | |
| KR20220108743A (en) | Unified sounding reference signal input/output functionality | |
| US20240014786A1 (en) | Power amplification system for high modulation bandwidth | |
| CN105099481B (en) | A kind of radio frequency transmit-receive method and system | |
| CN105871410B (en) | A kind of carrier wave polymerization CA radio circuit and mobile terminal | |
| CN102201799A (en) | Multi-carrier/multiband frequency-selecting implementation method and circuit | |
| CN110311705A (en) | A kind of signal processing circuit, terminal device and signal processing method | |
| US20230308119A1 (en) | Connectivity architecture for antenna switching | |
| US20240348280A1 (en) | Systems and methods for reducing harmonics in communication modules | |
| CN102571122A (en) | Two-channel four-frequency band communication terminal and communication method thereof | |
| US20240223227A1 (en) | Consolidation of amplifier ramping for 2g and 5g transmission | |
| WO2022103465A1 (en) | Envelope tracking radio frequency front-end circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |