CN208368943U - A kind of VCSEL array and 3D depth acquisition equipment obtaining equipment for 3D depth - Google Patents
A kind of VCSEL array and 3D depth acquisition equipment obtaining equipment for 3D depth Download PDFInfo
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- CN208368943U CN208368943U CN201821088537.8U CN201821088537U CN208368943U CN 208368943 U CN208368943 U CN 208368943U CN 201821088537 U CN201821088537 U CN 201821088537U CN 208368943 U CN208368943 U CN 208368943U
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Abstract
The utility model discloses a kind of VCSEL arrays that equipment is obtained for 3D depth, including luminescence component and semiconductor base, the luminescence component to be distributed in the surface of the semiconductor base；The luminescence component includes at least two groups luminescence unit group, wherein luminescence unit group described in every group includes the luminescence unit of multiple mutual conductions, luminescence unit group described in each group is distributed on the semiconductor base interlacedly according to respective corresponding pattern, and the corresponding pattern of the luminescence component that the corresponding pattern of luminescence unit group described in each group forms is irregular pattern；The 3D depth obtains equipment and is equipped at least two groups conducting wire, and conducting wire described in each group is separately connected and is used to drive luminescence unit group described in each group.The invention also discloses a kind of 3D depth to obtain equipment.Good balance is obtained between the depth accuracy and energy consumption that the utility model can obtain in specific 3D application.
Description
Technical field
Apparatus field is obtained the utility model relates to 3D depth more particularly to a kind of obtains equipment for 3D depth
VCSEL array and the 3D depth obtain equipment.
Background technique
3D deep technical is stepping into mass consumption field, and common technology includes that binocular solid matches, ToF (flies
The row time) and structure light.Especially structured light technique, it can work in weak texture region, at the same have high-precision and rationally
Energy consumption, so increasingly having been favored by people.The core component of structure light is laser projection module, it is a series of patterns
It projects on object, while image optics module can capture the pattern projected on object, and handle the pattern by processor,
Obtain the 3D depth information of object.
Since VCSEL (vertical cavity surface emitting laser) technology is more and more mature, cost performance already close to LED, while
It is all advantageous in accuracy, miniaturization, low-power consumption and reliability, so the system of 3D depth acquisition now largely all uses
VCSEL array is as infrared light supply.Wherein VCSEL array exactly has several luminescence units in a block semiconductor substrate, it
It is irregular arrangement on a semiconductor substrate so that laser projection module projects go out pattern irrelevance with higher,
As shown in Figure 1, (filled circles in figure represent each hair to the luminescence unit in the VCSEL array equipped with multiple irregular alignments
Light unit), the depth accuracy of the VCSEL array can not be adjusted, and energy consumption is higher, and the design of VCSEL array and processing
It is one of the difficult point of laser projection module.
The disclosure of background above technology contents is only used for the design and technical solution that auxiliary understands the utility model, not
The prior art for necessarily belonging to present patent application shows above content in the applying date of present patent application in no tangible proof
In the case where having disclosed, above-mentioned background technique should not be taken to the novelty and creativeness of evaluation the application.
Utility model content
In order to solve the above-mentioned technical problem, the utility model proposes a kind of VCSEL arrays that equipment is obtained for 3D depth
And the 3D depth obtains equipment, obtains between the depth accuracy and energy consumption that can be obtained in specific 3D application flat well
Weighing apparatus.
In order to achieve the above object, the utility model proposes following scheme:
The utility model discloses a kind of VCSEL arrays that equipment is obtained for 3D depth, including luminescence component and partly lead
Body substrate, the luminescence component are distributed in the surface of the semiconductor base；Wherein:
The luminescence component includes at least two groups luminescence unit group, wherein luminescence unit group described in every group includes multiple mutual
The luminescence unit of conducting, luminescence unit group described in each group are distributed in interlacedly according to respective corresponding pattern and described partly lead
In body substrate, and the corresponding pattern of the luminescence component that the corresponding pattern of luminescence unit group described in each group forms is irregular
Pattern；The 3D depth obtains equipment and is equipped at least two groups conducting wire, and conducting wire described in each group is separately connected and is used to drive each group
The luminescence unit group.
Preferably, the corresponding pattern of luminescence unit group described in each group is regular pattern or irregular pattern, and wherein
The corresponding pattern of at least one set luminescence unit group is irregular pattern.
Preferably, it is passed sequentially through between each luminescence unit of luminescence unit group described in each group and plates connection metal company
It picks up and, and be coated with insulating layer respectively on the corresponding connection metal of luminescence unit group described in every group.
Preferably, the surface of the semiconductor base is divided at least one region, divides respectively in each region
Luminescence unit group described in cloth at least two groups passes sequentially through connection between each luminescence unit of luminescence unit group described in each group
Metal connects, and the connection metal of the luminescence unit group described in each group in each region between each other interlock by nothing.
Preferably, the surface of the semiconductor base is divided into multiple regions, and the plurality of region is rule
Shape or irregular shape.
The invention also discloses a kind of processing method of above-mentioned VCSEL array for obtaining equipment for 3D depth,
Include:
S1: multiple luminescence units in luminescence unit group described in each group are respectively distributed to the semiconductor base
On；
S2: successively plated between each luminescence unit in the luminescence unit group described in any one group connection metal with
By each luminescence unit mutual conduction in the group luminescence unit group；
S3: plated on the connection metal plated in step s 2 insulating layer with by the connection metal carry out electricity every
From；
S4: successively the luminescence unit group described in each group repeats step S2 and S3, until by luminescence unit described in all groups
Respective each luminescence unit mutual conduction in group；
S5: luminescence unit group described in each group is separately connected conducting wire described in each group.
The invention also discloses a kind of processing method of above-mentioned VCSEL array for obtaining equipment for 3D depth,
Include:
S1: multiple luminescence units in luminescence unit group described in each group are respectively distributed to the semiconductor base
On；
S2: successively plated between each luminescence unit in the luminescence unit group described in any one group connection metal with
By each luminescence unit mutual conduction in the group luminescence unit group；
S3: plated on the connection metal plated in step s 2 insulating layer with by the connection metal carry out electricity every
From；
S4: successively the luminescence unit group described in each group repeats step S2 and S3, until will be except wherein in addition to any one group
All groups described in respective each luminescence unit mutual conduction in luminescence unit group；
S5: step S2 is repeated the group of non-mutual conduction luminescence unit group；
S6: luminescence unit group described in each group is separately connected conducting wire described in each group.
There is further disclosed herein a kind of 3D depth to obtain equipment, including laser projection module, image optics mould for the utility model
Block and processor, wherein the laser projection module includes DOE, collimation lens and above-mentioned VCSEL array, wherein described
The light beam emitted in VCSEL array successively projects through the collimation lens and the DOE and forms predetermined pattern on object, institute
It states image optics module and connects the image optics module for capturing the pre-set image on the object, the processor with right
The pre-set image carries out the 3D depth information that processing forms the object.
Preferably, the processor is also connected with the laser projection module, for controlling the list that shines described in each group respectively
Tuple.
Compared with prior art, the utility model has the beneficial effects that: the utility model proposes obtain for 3D depth
The VCSEL array for taking equipment will be distributed over the luminescence component on semiconductor base and be divided at least two groups luminescence unit group, and each group
Luminescence unit group can carry out respectively driving shine, allow to use as needed the luminescence unit of different number, to make 3D
Depth obtains and obtains good balance between the depth accuracy and energy consumption that equipment can obtain in specific 3D application；Moreover,
Since the corresponding pattern of each group luminescence unit group is to be distributed on a semiconductor substrate interlacedly, so that VCSEL array is sent out
Light beam projecting out goes out that overlapping will not be generated, and what will not be leaned on is too intensive, is solving so that subsequent depth calculation will not be reduced
Matching rate when code guarantees that precision is unaffected.
In some preferred embodiments, by being divided into the region of multiple irregular shapes on a semiconductor substrate,
Each region is distributed multi-group light-emitting unit group respectively, wherein the connection metal of each group luminescence unit group in each region is mutual
Between without interlocking, the purpose for guaranteeing precision on the one hand still may be implemented, on the other hand also simplify process.
In other preferred embodiments, pass through the company plated between each luminescence unit of every group of luminescence unit group
It connects and plates insulating layer on metal, so that mutually insulated between each group luminescence unit group, realizes that the independent of each group luminescence unit group drives
It is dynamic, matching rate of the subsequent depth calculation in decoding is further promoted, the depth accuracy of acquisition is improved.
Detailed description of the invention
Fig. 1 is the arrangement schematic diagram of the luminescence unit of VCSEL array in the prior art；
Fig. 2 is the arrangement schematic diagram of the VCSEL array that equipment is obtained for 3D depth of the preferred embodiment in the utility model；
Fig. 3 is the connection schematic diagram of the luminescence unit of the part in Fig. 2；
Fig. 4 is the diagrammatic cross-section of the part in Fig. 2；
Fig. 5 is the enlarged diagram at the A in Fig. 4；
Fig. 6 is that the 3D depth of the preferred embodiment in the utility model obtains the schematic diagram of equipment；
Fig. 7 is the schematic diagram of the laser projection module in Fig. 6；
Fig. 8 is that the arrangement of the VCSEL array for obtaining equipment for 3D depth of another preferred embodiment of the utility model is shown
It is intended to；
Fig. 9 is the connection metal connection schematic diagram of two groups of luminescence unit groups in the region in the upper left corner in Fig. 8.
Specific embodiment
Below against attached drawing and in conjunction with preferred embodiment, the utility model is described in further detail.
As shown in Fig. 2, the preferred embodiment in the utility model discloses a kind of VCSEL battle array for obtaining equipment for 3D depth
Column 10, including luminescence component 11 and semiconductor base 12, luminescence component 11 is with the formal distribution of two-dimensional array in semiconductor base
12 surface；Wherein luminescence component 11 includes first group of luminescence unit group 111 and second group of luminescence unit group 112, wherein first
Group luminescence unit group 111 includes the first luminescence unit 1111 of multiple mutual conductions, and second group of luminescence unit group 112 includes multiple
Second luminescence unit 1121 of mutual conduction, first group of luminescence unit group 111 and second group of luminescence unit group 112 are respectively according to phase
The first pattern and the second pattern answered alternately is distributed on semiconductor base 12, and by first group of luminescence unit group 111 and
The pattern of the luminescence component 11 of two groups of corresponding first pattern and the second patterns of luminescence unit group 112 composition is irregular pattern；
3D depth obtains equipment and is equipped with the first conducting wire 13 and the second conducting wire 14, and the first conducting wire 13 connects and drives first group of luminescence unit
Group 111, the second conducting wire 14 connect and drive second group of luminescence unit group 112, enable to selectively make first group to shine
One group or two groups in unit group 111 and second group of luminescence unit group 112 shines.
Wherein, filled circles indicate the first luminescence unit 1111, and open circles indicate the second luminescence unit 1121, and first is luminous single
Member 1111 and the second luminescence unit 1121 can be identical luminescence unit, be also possible to different luminescence units.First group of hair
Light unit group 111 and/or second group of corresponding first pattern of luminescence unit group 112 and/or the second pattern are irregular patterns, separately
Can have a pattern in first pattern and the second pattern is regular pattern, in the present embodiment, it is only necessary to be shone by first group single
The pattern of luminescence component 11 of tuple 111 and second group of corresponding first pattern and the second pattern of luminescence unit group 112 composition is
Irregular pattern.
It is plated as shown in figure 3, being passed sequentially through between each first luminescence unit 1111 in first group of luminescence unit group 111
Connection metal 1112 connects, and passes sequentially through between each second luminescence unit 1121 in second group of luminescence unit group 112
It plates connection metal 1122 to connect, and be coated with insulating layer between connection metal 1112 and connection metal 1122.Such as Fig. 4 institute
Show, semiconductor base 12 includes p-type distributed bragg reflector mirror (P-DBR) 121, N-type distributed bragg reflector mirror (N-
DBR) 122 and N electrode (cathode) 123, wherein the first luminescence unit 1111 and the second luminescence unit 1121 are respectively distributed to partly lead
In body substrate 12, as shown in connection with fig. 5, the processing method of the VCSEL array 10 includes:
S1: by multiple first luminescence units 1111 and second group of luminescence unit group 112 in first group of luminescence unit group 111
In multiple second luminescence units 1121 be respectively distributed on semiconductor base 12；
S2: each P electrode of each second luminescence unit 1121 in second group of luminescence unit group 112 is sheltered from, and
Plate connection metal 1112 successively between each first luminescence unit 1111 in first group of luminescence unit group 111 with will be each
First luminescence unit, 1111 mutual conduction；
S3: insulating layer 1113 is plated on connection metal 1112 and is electrically isolated with that will connect metal 1112, wherein insulating
Layer 1113 can be silicon nitride etc.；
S4: expose each P electrode of each second luminescence unit 1121 in second group of luminescence unit group 112, second
Connection metal 1122 is plated between each second luminescence unit 1121 in group luminescence unit group 112 so that each second to shine
1121 mutual conduction of unit；
S5: first group of luminescence unit group 111 and second group of luminescence unit group 112 are separately connected the first conducting wire 13 and
Two conducting wires 14.
By the way that the above-mentioned luminescence component 11 being distributed in semiconductor base 12 to be grouped, and the luminescence unit group of each group can
It is shone with carrying out driving respectively, allows to use as needed the luminescence unit of different number, be divided into 2 groups in the present embodiment,
In other embodiments or 3 groups, 4 groups of even more multiple groups, 3D depth is enabled to obtain equipment in specific 3D application
Good balance is obtained between the depth accuracy and energy consumption of acquisition.
Such as Fig. 6,3D depth acquisition device includes laser projection module 100, image optics module 200 and processor 300, is swashed
The light that VCSEL array 10 emits is projected to and forms predetermined pattern on object by light projection module 100, and image optics module 200 is caught
Catch the predetermined pattern of object, processor 300 connect image optics module 200 with to the predetermined pattern on the object captured into
The 3D depth information of row processing formation object.In conjunction with Fig. 7, laser projection module 100 includes VCSEL array 10, collimation lens 20
With DOE (diffraction optical element) 30, shine comprising multiple first luminescence units 1111 and multiple second in VCSEL array 10 single
Member 1121, can emit multiple beamlets, in figure for convenience, only list 4 luminescence units, and in fact VCSEL gusts
Column 10 are two-dimensional array light sources, and collimation lens 20 receives the light beam issued in VCSEL array 10, converges, be allowed into it
For directional light, DOE will receive light beam corresponding with the pattern of luminescence component 11 in VCSEL array 10, and generation is multiple each other
Adjacent duplication pattern extends projected light beam；Wherein the pattern of the luminescence component 11 on VCSEL array 10 is irregular
Pattern meets 3D depth and obtains equipment so that the pattern requirement that laser projection module 100 projects has the irrelevance of height
Requirement.Wherein in the present embodiment, processor 300 can connect laser projection module 100, can be used for controlling first respectively
Group luminescence unit group 111 and second group of luminescence unit group 112.
The VCSEL battle array in the laser projection module 100 in 3D depth acquisition device in the preferred embodiment in the utility model
The luminescence component 11 of column 10 is divided into first group of luminescence unit group 111 and second group of luminescence unit group 112, respectively by the first conducting wire
13 and second conducting wire 14 control；If the depth information that current application does not need high quality (namely does not need high-resolution
Depth map) or current device needs work long hours, and when energy consumption and heat dissipation become main problem, only the can be made
One group of luminescence unit group 111 or second group of luminescence unit group 112 are driven, so that the pattern of sparse hot spot is projected to object
On, it can achieve and save energy consumption, reduce the purpose to radiate；Depth information if necessary to high quality (namely needs high-resolution
Depth map), then first group of luminescence unit group 111 and second group of luminescence unit group 112 can be made to be driven simultaneously, thus thick
The pattern of close hot spot is projected on object；Processor 300 handles the sparse hot spot or dense that image optics module 200 captures
The image of hot spot, to obtain the run-of-the-mill of object or the 3D depth information of high quality.
The VCSEL in the laser projection module 100 in 3D depth acquisition device in the preferred embodiment in the utility model
First group of luminescence unit group 111 of array 10 and second group of luminescence unit group 112 be distributed interlacedly together with so that
The light that VCSEL array 10 emits is projected away the shape of the hot spot generated and quality and can be consistent by laser projection module 100,
It will not influence subsequent depth calculation.It is compared to the case where being simply divided into mutually independent two groups of luminescence unit groups, in two groups of hairs
In the case where light unit group all light, may cause and have overlapping between the characteristic point projected away, or lean on it is too intensive, therefore
Cause to may be decreased matching rate of the algorithm in decoding, causes precision impacted；And the VCSEL of the preferred embodiment in the utility model
The light beam projecting that array 10 issues goes out that overlapping will not be generated, and what will not be leaned on is too intensive, so that subsequent depth will not be reduced
The matching rate in decoding is calculated, guarantees that precision is unaffected.
VCSEL array in another preferred embodiment is divided into multiple regions on the surface of semiconductor base, every
It is distributed at least two groups luminescence unit group in a region, is wherein passed sequentially through between each luminescence unit in each group luminescence unit group
Connection metal connects, and the connection metal of each group luminescence unit group in each region between each other interlock by nothing, such as
Structure as shown in Figure 8 is divided into 9 regions on the surface of semiconductor base, and wherein each group in each region shines single
Tuple is separately connected different conducting wires that can be driven respectively, as shown in figure 9, being the region in the upper left corner in Fig. 8 shown
Two groups of interior luminescence unit groups are separately connected different conductor to be driven, wherein the connection metal phase of two groups of luminescence unit groups
Without interlocking between mutually, other each regions can be connected according to mode as such so that two groups in each region shine
The connection metal of unit group between each other interlock by nothing；But it still meets each group luminescence unit on the surface of semiconductor base
Group is distributed on a semiconductor substrate interlacedly according to respective corresponding pattern；In addition, on the surface of semiconductor base
The multiple regions being divided into can be regular shape, or irregular shape.The VCSEL array of the preferred embodiment is same
It enables to 3D depth to obtain equipment and obtains good balance between the depth accuracy and energy consumption obtained in specific 3D application.
It, cannot the above content is specific preferred embodiment further detailed description of the utility model is combined
Assert that the specific implementation of the utility model is only limited to these instructions.For those skilled in the art of the present invention
For, without departing from the concept of the premise utility, several equivalent substitute or obvious modifications, and performance can also be made
Or purposes is identical, all shall be regarded as belonging to the protection scope of the utility model.
Claims (7)
1. a kind of VCSEL array for obtaining equipment for 3D depth, which is characterized in that including luminescence component and semiconductor base,
The luminescence component is distributed in the surface of the semiconductor base；Wherein:
The luminescence component includes at least two groups luminescence unit group, wherein luminescence unit group described in every group includes multiple mutual conductions
Luminescence unit, luminescence unit group described in each group is distributed in described semiconductor-based interlacedly according to respective corresponding pattern
On bottom, and the corresponding pattern of the luminescence component that the corresponding pattern of luminescence unit group described in each group forms is irregular component
Case；The 3D depth obtains equipment and is equipped at least two groups conducting wire, and conducting wire described in each group is separately connected and is used to drive each group institute
State luminescence unit group.
2. VCSEL array according to claim 1, which is characterized in that the corresponding figure of luminescence unit group described in each group
Case is regular pattern or irregular pattern, and wherein at least the corresponding pattern of luminescence unit group described in one group is irregular component
Case.
3. VCSEL array according to claim 1, which is characterized in that each hair of luminescence unit group described in each group
It is passed sequentially through between light unit and plates connection metal and connect, and on the corresponding connection metal of luminescence unit group described in every group
It is coated with insulating layer respectively.
4. VCSEL array according to claim 1, which is characterized in that the surface of the semiconductor base is divided at least
One region is distributed luminescence unit group described at least two groups respectively in each region, luminescence unit group described in each group
Connection metal is passed sequentially through between each luminescence unit to connect, and is shone described in each group in each region
The connection metal of unit group between each other interlock by nothing.
5. VCSEL array according to claim 4, which is characterized in that the surface of the semiconductor base is divided into multiple
The region, the plurality of region are regular shape or irregular shape.
6. a kind of 3D depth obtains equipment, which is characterized in that including laser projection module, image optics module and processor,
Described in laser projection module include DOE, collimation lens and VCSEL array described in any one of claim 1 to 5, wherein
The light beam emitted in the VCSEL array successively projects through the collimation lens and the DOE and forms default figure on object
Case, the image optics module are used to capture the pre-set image on the object, and the processor connects the image optics mould
Block is to carry out the 3D depth information that processing forms the object to the pre-set image.
7. 3D depth according to claim 6 obtains equipment, which is characterized in that the processor is also connected with the laser and throws
Module is penetrated, for controlling luminescence unit group described in each group respectively.
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| CN201821088537.8U CN208368943U (en) | 2018-07-10 | 2018-07-10 | A kind of VCSEL array and 3D depth acquisition equipment obtaining equipment for 3D depth |
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| CN201821088537.8U CN208368943U (en) | 2018-07-10 | 2018-07-10 | A kind of VCSEL array and 3D depth acquisition equipment obtaining equipment for 3D depth |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707530A (en) * | 2018-07-10 | 2020-01-17 | 深圳市安思疆科技有限公司 | VCSEL array for 3D depth acquisition equipment and 3D depth acquisition equipment |
| WO2020177007A1 (en) * | 2019-03-01 | 2020-09-10 | Shenzhen Raysees Technology Co., Ltd. | Pattern projector based on vertical cavity surface emitting laser (vcsel) array |
-
2018
- 2018-07-10 CN CN201821088537.8U patent/CN208368943U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707530A (en) * | 2018-07-10 | 2020-01-17 | 深圳市安思疆科技有限公司 | VCSEL array for 3D depth acquisition equipment and 3D depth acquisition equipment |
| WO2020177007A1 (en) * | 2019-03-01 | 2020-09-10 | Shenzhen Raysees Technology Co., Ltd. | Pattern projector based on vertical cavity surface emitting laser (vcsel) array |
| CN113490880A (en) * | 2019-03-01 | 2021-10-08 | 瑞识科技（深圳）有限公司 | Pattern projector based on Vertical Cavity Surface Emitting Laser (VCSEL) array |
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