CN208298994U - Broad frequency micro-band with trap characteristic-line of rabbet joint transition structure - Google Patents
Broad frequency micro-band with trap characteristic-line of rabbet joint transition structure Download PDFInfo
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- CN208298994U CN208298994U CN201820977936.3U CN201820977936U CN208298994U CN 208298994 U CN208298994 U CN 208298994U CN 201820977936 U CN201820977936 U CN 201820977936U CN 208298994 U CN208298994 U CN 208298994U
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Abstract
The broad frequency micro-band with trap characteristic-line of rabbet joint transition structure that the utility model discloses a kind of, the transition structure work in the frequency range of 2-14GHz, realize trap in 3.37-3.84GHz frequency ranges and 10.67-11.14GHz frequency ranges.Microstrip line is made of the micro-strip sector open-circuit minor matters of Chebyshev's impedance transformer and end, it is located at the top layer of medium substrate；U-shaped structure is etched on a microstrip line wherein forms U-type groove；Medium substrate use dielectric constant for 4.4 FR4 material.Etch away sections copper forms interdigital type groove and petal type groove on ground plane.The utility model micro-strip-line of rabbet joint transition structure structure is simple, small in size, easy to process, and passband matching properties are good.
Description
Technical field
The broad frequency micro-band with trap characteristic-line of rabbet joint transition structure that the utility model relates to a kind of, transition structure work
In the frequency range of 2-14GHz, trap is realized in 3.37-3.84GHz frequency ranges and 10.67-11.14GHz frequency ranges.
Background technique
In today of the rapid development of the communication technology, radio spectrum resources are increasingly intensive, thus have to take into account that communication frequency
Interfering with each other between section.In order to eliminate interference, we must just inhibit the interference of successive bands during signal transmits,
It avoids interference signal from being transferred in antenna, can reduce the complexity of Antenna Design in this way.There is not in microwave circuit
With the transition between transmission line, it can use transition structure and curb interference band.With the 5th third-generation mobile communication technology (5G)
The formulation and research and development of standard, 5G millimetre-wave circuit are paid close attention to by academia and industrial circle.Chinese industrial and informationization portion have announced
The test frequency range of 5G technology millimeter wave band has 3.3-3.6GHz, 4.8-5.0GHz, 24.75-27.5GHz and 37-
42.5GHz.When circuit is applied in 4.8-5.0GHz frequency range, need to inhibit from such as " 3.3-3.6GHz " successive bands
Interference.
Summary of the invention
Along with the rapid development of the communication technology, frequency spectrum resource is increasingly intensive, and usable frequency range is more and more, thus we
The spectral interference except working frequency range must be taken into consideration.In 5G technology millimeter wave band, circuit is applied in 4.8-5.0GHz frequency ranges
When, need the interference for inhibiting to come from such as " 3.3-3.6GHz " successive bands.
The technical scheme adopted by the utility model to solve the technical problem is as follows: the transition structure used medium material is
FR4, medium substrate with a thickness of h=0.6mm, dielectric constant εr=4.4, loss tangent angle is 0.02.The top layer of medium substrate
Copper wire is microstrip line, it consists of two parts: stepped impedance transformer and end sector open-circuit minor matters.Stepped impedance transformer by
The feeding microstrip line that the identical 4 sections of Chebyshev's impedances transformation microstrip line of length and impedance are 50 Ω forms.And medium substrate
Bottom copper face is the ground plane of microstrip line, has etched the line of rabbet joint in bottom copper face, the line of rabbet joint is made of two parts: two ends are petal-shaped
Short-circuit minor matters slot, middle section are the interdigital type groove of the petal-shaped short-circuit minor matters slot of connection.In order to realize the suppression to interference band
System has etched a U-lag seam on stepped impedance transformer wherein a microstrip line, has constituted DMS structure (defect micro-strip knot
Structure), DMS structure can be avoided effectively because of electromagnetic wave leakage caused by being grounded board defect as DGS structure (defect ground structure), and
And interference will not be generated to other component in microwave circuit.In order to realize broadband, microstrip line is become using 4 sections of Chebyshev's impedances
Parallel operation is matched with the microstrip line of 50 Ω.
The remarkable advantage of the utility model is: the transition structure is in 3.37-3.84GHz frequency ranges and 10.67-11.14GHz
Frequency range standing-wave ratio is much larger than 2, so that 3.3-3.6GHz frequency ranges have been curbed, so that 4.8-5.0GHz frequency ranges are not interfered by it.
And in remaining frequency range, return loss S11Less than -15dB, standing-wave ratio is functional less than 1.5.
Detailed description of the invention
Fig. 1 is micro-strip-line of rabbet joint transition structure design drawing that the utility model has trap function petal type groove.
Fig. 2 is micro-strip-line of rabbet joint transition structure top level structure figure that the utility model has trap function petal type groove.
Fig. 3 is the structure chart of microstrip line 1 in Fig. 2.
Fig. 4 is the structure chart of U-type groove 3 in Fig. 2.
Fig. 5 is micro-strip-line of rabbet joint transition structure fabric figure that the utility model has trap function petal type groove.
Fig. 6 is the detailed structure view of Fig. 5.
Fig. 7 is micro-strip-line of rabbet joint transition structure standing-wave ratio measured value that the utility model has trap function petal type groove
With simulation value.
Specific embodiment
Below with reference to example and attached drawing, the utility model is described in further detail.
As shown in Figure 1, micro-strip-line of rabbet joint transition structure with trap function petal type groove of the utility model design, packet
Top level structure figure, fabric figure shown in fig. 5 and Fig. 2 middle dielectric layer 6 shown in Fig. 2 is included to form.Top layer is by two micro-strips
Line 1 and 2 forms, and U-type groove 3 is etched on microstrip line 2 makes the transition structure have trap function.The material of middle dielectric layer 6 is
FR4, dielectric constant εr=4.4, loss tangent angle is 0.02, its length is 36mm × 38mm × 0.6mm.Bottom is such as
Shown in Fig. 5, it is made of ground plane 7 and slot 4,5.Slot 4 and slot 5 are copper by the ground plane 7(ground plane 7 in Fig. 5) on etch away portion
Copper is divided to be formed.
As shown in Fig. 2, the top layer of transition structure is made of two microstrip lines 1 and 2.6 be medium substrate, the length of medium substrate
It is 36mm × 38mm with width.In order to realize trap function, U-type groove 3 is etched on microstrip line 2 and constitutes DMS structure, DMS structure
It can effectively avoid because of electromagnetic wave leakage caused by being grounded board defect as DGS structure, and will not be to other in microwave circuit
Component generates interference.
As shown in figure 3, in microstrip line 1,2, in order to match 50 Ω microstrip lines 101 (microstrip line 101 is feed end), using by
The 4 rank Chebyshev transformation devices that microstrip line 102,103,104 and 105 forms.In microstrip line 1 and 2, every section of micro-strip wire length is all
5.42mm, 101 width of microstrip line are 1.15mm；102 impedance of microstrip line is 53 Ω, width 1.04mm；103 impedance of microstrip line is 55
Ω, width 0.98mm；104 impedance of microstrip line is 61 Ω, width 0.81mm；105 impedance of microstrip line is 68 Ω, width 0.66mm.
Chebyshev transformation device end is micro-strip sector open-circuit minor matters 106, radius 4.77mm, fan angle 75o。
As shown in figure 4, being DMS (scarce micro-structure) structure chart for etching U-type groove 3 on microstrip line 2 and constituting.Slot 301 it is long and
Wide is not 12.4mm × 0.1mm, and slot 302 is long and width is 0.1mm × 0.4mm.U-type groove 3 is away from port 4.5mm.
As shown in figure 5, being micro-strip-line of rabbet joint transition structure bottom that the utility model has trap function petal type groove
Structure chart.7 be microstrip line ground plane (applying copper in the bottom of medium 6 to be formed).The etch away sections copper on microstrip line ground plane 7,
Form interdigital type groove 4 and petal type groove 5.
As shown in fig. 6, being micro-strip-line of rabbet joint transition structure bottom that the utility model has trap function petal type groove
Detail of construction.Interdigital type groove 4 is made of the identical interdigital structure slot of 5 sizes, the length and width of slot 401 be 1.6mm ×
0.24mm, the length and width of slot 402 are 3.7mm × 0.24mm, and the length and width of slot 403 are 3.6mm × 0.24mm.Petal type groove 5 is
Etched on microstrip line earth plate two it is orthogonal with one heart and the identical ellipsoid of area is formed, ellipsoid major semiaxis
For 4mm, semi-minor axis 2mm.
As shown in fig. 7, being micro-strip-line of rabbet joint transition structure standing-wave ratio that the utility model has trap function petal type groove
Measured value and simulation value.Measured result and simulation result trap frequency are coincide substantially.
Claims (1)
1. a kind of broad frequency micro-band with trap characteristic-line of rabbet joint transition structure, structure is by one group of microstrip line, U-type groove, medium
Substrate, interdigital type groove, petal type groove, ground plane composition, it is characterised in that:
The microstrip line is made of the micro-strip sector open-circuit minor matters of Chebyshev's impedance transformer and end, it is located at medium base
The top layer of plate；U-shaped structure is etched on a microstrip line wherein forms U-type groove；The medium substrate is located at microstrip line and connects
Between floor；Etch away sections copper forms interdigital type groove and petal type groove on ground plane；Interdigital type groove both ends and top layer
Two microstrip lines it is orthogonal；Petal-shaped slot position is symmetrical with the distal center of interdigital type groove in the terminal of interdigital type groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820977936.3U CN208298994U (en) | 2018-06-25 | 2018-06-25 | Broad frequency micro-band with trap characteristic-line of rabbet joint transition structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820977936.3U CN208298994U (en) | 2018-06-25 | 2018-06-25 | Broad frequency micro-band with trap characteristic-line of rabbet joint transition structure |
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| CN208298994U true CN208298994U (en) | 2018-12-28 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110137653A (en) * | 2019-05-31 | 2019-08-16 | 佳木斯大学 | A kind of filter with low insertion loss Wilkinson power divider |
| CN114204241A (en) * | 2021-12-07 | 2022-03-18 | 杭州电子科技大学 | Microstrip-open slot line coupled dual-band 90-degree directional coupler |
-
2018
- 2018-06-25 CN CN201820977936.3U patent/CN208298994U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110137653A (en) * | 2019-05-31 | 2019-08-16 | 佳木斯大学 | A kind of filter with low insertion loss Wilkinson power divider |
| CN110137653B (en) * | 2019-05-31 | 2021-05-28 | 佳木斯大学 | Low-insertion-loss Wilkinson power divider |
| CN114204241A (en) * | 2021-12-07 | 2022-03-18 | 杭州电子科技大学 | Microstrip-open slot line coupled dual-band 90-degree directional coupler |
| CN114204241B (en) * | 2021-12-07 | 2022-10-21 | 杭州电子科技大学 | Microstrip-open slot line coupling dual-band 90-degree directional coupler |
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