CN208298787U - A kind of cleaning device of semiconductor wafer - Google Patents
A kind of cleaning device of semiconductor wafer Download PDFInfo
- Publication number
- CN208298787U CN208298787U CN201820886768.7U CN201820886768U CN208298787U CN 208298787 U CN208298787 U CN 208298787U CN 201820886768 U CN201820886768 U CN 201820886768U CN 208298787 U CN208298787 U CN 208298787U
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- semiconductor wafer
- electrolytic cell
- reactive tank
- cleaning device
- return pipe
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Abstract
The utility model discloses a kind of cleaning devices of semiconductor wafer, described device includes electrolytic cell and reactive tank, cathodic metal plate and anode are equipped in electrolytic cell, diaphragm is set with outside cathodic metal plate, the upper end of anode is located at the lower section of cathodic metal plate upper end, the bottom surface attaching of electrolytic cell has return pipe, the return pipe is equipped with the pump housing, return pipe is connect with reactive tank, it reacts groove sidewall and is equipped with and be located at overflow hole above return pipe, the overflow hole attaching has overflow pipe, and the outlet end of overflow pipe extends to upper part of the electrolytic cell.The utility model realizes that sulfuric acid recycles, can reduction sulfuric acid largely dosage, the purpose of realizations wafer surface cleaning that can be more efficient and effectively reduce sulfuric acid dosage, moreover it is possible to reduce the discharge of non-sulfuric acid, save the cost while is also environmentally friendly.
Description
Technical field
The utility model relates to a kind of cleaning devices of semiconductor wafer.
Background technique
Semiconductor wafer needs to carry out cleaning process, illustrates by taking basket jewel substrate as an example, increasingly with LED making technology
Mature, production cost continuous reduction, application range and market scale are also growing day by day；But the epitaxial material GaN of LED,
It due to its special physicochemical property, can not directly be synthesized, it is necessary to be attached to specific substrate material and be grown.Instantly it leads
The LED substrate material of stream is monocrystalline sapphire substrate, and the growth of epitaxial layer has very graphic sapphire surface cleanliness
High requirement, and there is also very high requests to sapphire flat plate surface cleanliness for patterning process, therefore, exist to Sapphire Substrate
The control of surface cleanliness before its graphical process and epitaxial growth is essential.
For the mode cleaned at present to Sapphire Substrate mostly based on wet-cleaning, cleaning formulation used is mainly logical
Cross H2SO4Solution and H2O2Solution is made into SPM solution in proportion.Under the conditions of high temperature (being greater than 100 DEG C), sulfuric acid and hydrogen peroxide meeting
Caro's acid is generated, there is very strong dehydration property and oxidability, the C-H bond of organic matter can be destroyed, organic pollutant is oxidized to
CO2And H2O achievees the purpose that remove organic matter, while can also will be dissolved in cleaning solution after partial metal oxide.
But sulfate ion (the SO in solution can be consumed during this4 2-), and cleaning solution must maintain higher temperature,
Sulfuric acid also must be maintained at very high concentration, and with the increase of wash number, the concentration of sulfuric acid can be gradually decreased, the oxygen of cleaning solution
The property changed can also decrease, and cleaning ability can also decline；And in order to maintain cleaning effect, need to regularly replace cleaning solution, this
Process can generate a large amount of Waste Sulfuric Acid.Industrial cost also will increase to the subsequent processing of waste sulfate.
The essence of this based cleaning liquid is the conditions such as to control and heat by concentration to allow H2SO4With H2O2Reaction generates oxidation
The higher oxide of current potential, aoxidizes the impurity on wafer surface, achievees the purpose that clean surface.
Utility model content
The technical problem to be solved by the present invention is to provide a kind of cleaning devices of semiconductor wafer, realize following for sulfuric acid
Ring utilize, can largely reduction sulfuric acid dosage, can be more efficient realization wafer surface cleaning purpose and
It is effective to reduce sulfuric acid dosage, moreover it is possible to reduce the discharge of non-sulfuric acid, also environmental protection while save the cost.
In order to solve the above-mentioned technical problem, the utility model takes following technical scheme:
A kind of cleaning device of semiconductor wafer, described device include electrolytic cell and reactive tank, are equipped with cathode in electrolytic cell
Metal plate and anode, cathodic metal plate are set with diaphragm outside, and the upper end of anode is located at the lower section of cathodic metal plate upper end, electrolytic cell
Bottom surface attaching have return pipe, which is equipped with the pump housing, and return pipe connect with reactive tank, reacts groove sidewall equipped with being located at back
Overflow hole above flow tube, the overflow hole attaching have overflow pipe, and the outlet end of overflow pipe extends to upper part of the electrolytic cell.
The bottom surface of the return pipe and reactive tank connects and protrudes into reactive tank, is equipped with and return pipe attaching in reactive tank
Dispersion pipe.
The side wall of the reactive tank is equipped with ultraviolet lamp.
It is additionally provided with slot cover on the reactive tank, which is equipped with ultraviolet lamp.
Wall is additionally provided with heater in or beyond the reactive tank.
The outlet end of the overflow pipe extends to the region of the cathodic metal plate upper end of electrolytic cell.
The also attaching of the outlet end of the overflow pipe has liquid to disperse pipeline.
The filter assemblies for being covered with return pipe are equipped in the electrolytic cell.
The overflow pipe is equipped with pump.
The anode is to cross diamond anode.
The utility model realizes recycling for sulfuric acid using the circulation between electrolytic cell and reactive tank, can be very
The dosage of reduction sulfuric acid in big degree, the purpose of realization wafer surface cleaning that can be more efficient and effectively reduces sulphur
Sour dosage, moreover it is possible to reduce the discharge of non-sulfuric acid, also environmental protection while save the cost.
Detailed description of the invention
Attached drawing 1 is the utility model catenation principle schematic diagram；
Attached drawing 2 is the diagrammatic cross-section of the utility model electrolytic cell；
Attached drawing 3 is the schematic top plan view of the utility model electrolytic cell；
Attached drawing 4 is the diagrammatic cross-section of the utility model reactive tank；
Attached drawing 5 is the schematic top plan view of the utility model reactive tank.
Specific embodiment
For the feature, technological means and specific purposes achieved, function that can further appreciate that the utility model, below
The utility model is described in further detail in conjunction with attached drawing and specific embodiment.
As shown in attached drawing 1-5, the utility model discloses a kind of cleaning device of semiconductor wafer, and described device includes electricity
Slot 3 and reactive tank 7 are solved, cathodic metal plate 2 is equipped in electrolytic cell 3 and crosses the anode 4 of diamond, be set with outside cathodic metal plate 2
Diaphragm 1, the upper end of anode 4 are located at the lower section of 2 upper end of cathodic metal plate, and the bottom surface attaching of electrolytic cell 3 has return pipe 14, the reflux
Pipe 14 is equipped with the pump housing 5, and return pipe 14 is connect with reactive tank 7, and 7 side wall of reactive tank is equipped with the overflow hole for being located at 14 top of return pipe
8, which has overflow pipe 15, and the outlet end of overflow pipe 15 extends to 3 top of electrolytic cell.After being reacted in electrolytic cell
Liquid flows back into reactive tank through return pipe to react again, and liquid after the reaction was completed flows in electrolytic cell through overflow pipe again,
To realize recycling for reaction liquid, the loss of resource is saved, reduces production cost.Sulfuric acid solution is placed in electrolytic cell,
Diaphragm is able to bear strong acid and high temperature is anti-corrosion, and under the action of diaphragm, sulfuric acid solution is separated into Fuyang ion (mainly H+)
Area and rich anion (mainly sulfate ion SO4 2-) area, richness is nor the anode that ion is mainly concentrated, rich anion are then led
Concentrate on cathodic metal plate.
The bottom surface of the return pipe and reactive tank connects and protrudes into reactive tank, is equipped in reactive tank 7 and fills with return pipe 14
The dispersion pipe 6 connect makes liquid is more uniform to be distributed in reactive tank, is conducive to the reaction of liquid by dispersion pipe.
The side wall of the reactive tank is equipped with ultraviolet lamp.Slot cover 11 is additionally provided on reactive tank 7, which is equipped with ultraviolet lamp
13.By the irradiation of ultraviolet lamp, make reaction is more efficient to carry out.Simultaneously in reaction process, it can also add into reactive tank
Enter hydrogen peroxide, accelerate reaction process, promotes potentiometric titrations (SO in the unit time4*-) yield.
Wall is additionally provided with heater in or beyond the reactive tank, can heat certain temperature, improves reaction efficiency.
The outlet end of the overflow pipe extends to the region of the cathodic metal plate upper end of electrolytic cell, so that flowing out from reactive tank
The liquid (predominantly sulfate ion) come concentrates on the rich anion area of electrolytic cell.Pass through the outlet end attaching in overflow pipe 15
Liquid disperses pipeline 9, so that distribution is more uniform.
The filter assemblies 10 for being covered with return pipe are equipped in the electrolytic cell 3, cleaning solution is filtered, improve cleaning solution
Cycle life.
The overflow pipe is equipped with pump.It, can also be using pump come abstraction reaction other than the natural overflow using overflow pipe
Liquid in slot guarantees the abundance of the cleaning solution in electrolytic cell.
In the utility model, cleaning solution is usually sulfuric acid solution, is divided sulfuric acid solution using cathodic metal plate and anode
From for Fuyang ion (mainly H+) area and rich anion (mainly sulfate ion SO4 2-) area, Fuyang ion concentrates on anode
Region, rich anion then concentrate on cathodic metal plate region.Sulfuric acid solution is aoxidized by anode, by sulfate ion
(SO4 2-) it is oxidized to over cure acid ion (S2O8 2-), then send into reactive tank, then again by suitably heating, hydrogen peroxide, ultraviolet
The conditions such as light irradiation, can be by over cure acid ion (S2O8 2-) further activation, generate the higher potentiometric titrations of oxidizing potential
(SO4*-), it was transmitted back in electrolytic cell originally, and be allowed to be reacted with the substance of wafer surface, to reach cleaning wafer surface
Effect, and the sulfuric acid solution recycled reduces resource loss, saves production cost.
It should be noted that it is practical new to be not limited to this above is only the preferred embodiment of the utility model
Type, although the utility model is described in detail referring to embodiment, for those skilled in the art, still
It can modify to technical solution documented by previous embodiment or equivalent replacement of some of the technical features,
But within the spirit and principle of the utility model, any modification, equivalent replacement, improvement and so on should be included in
Within the protection scope of the utility model.
Claims (10)
1. a kind of cleaning device of semiconductor wafer, which is characterized in that described device includes electrolytic cell and reactive tank, in electrolytic cell
Equipped with cathodic metal plate and anode, it is set with diaphragm outside cathodic metal plate, the upper end of anode is located under cathodic metal plate upper end
Side, the bottom surface attaching of electrolytic cell have return pipe, which is equipped with the pump housing, and return pipe is connect with reactive tank, react groove sidewall
Equipped with overflow hole above return pipe is located at, which has overflow pipe, and the outlet end of overflow pipe extends to upper part of the electrolytic cell.
2. the cleaning device of semiconductor wafer according to claim 1, which is characterized in that the return pipe and reactive tank
Bottom surface connects and protrudes into reactive tank, and the dispersion pipe with return pipe attaching is equipped in reactive tank.
3. the cleaning device of semiconductor wafer according to claim 2, which is characterized in that the side wall of the reactive tank is equipped with
Ultraviolet lamp.
4. the cleaning device of semiconductor wafer according to claim 3, which is characterized in that be additionally provided with slot on the reactive tank
Lid, the slot cover are equipped with ultraviolet lamp.
5. the cleaning device of semiconductor wafer according to claim 4, which is characterized in that wall is also in or beyond the reactive tank
Equipped with heater.
6. the cleaning device of semiconductor wafer according to claim 5, which is characterized in that prolong the outlet end of the overflow pipe
Extend to the region of the cathodic metal plate upper end of electrolytic cell.
7. the cleaning device of semiconductor wafer according to claim 6, which is characterized in that the outlet end of the overflow pipe is also
Attaching has liquid to disperse pipeline.
8. the cleaning device of semiconductor wafer according to claim 7, which is characterized in that be equipped with covering in the electrolytic cell
The filter assemblies of return pipe.
9. the cleaning device of semiconductor wafer according to claim 8, which is characterized in that the overflow pipe is equipped with pump.
10. the cleaning device of semiconductor wafer according to claim 9, which is characterized in that the anode is to cross diamond
Anode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820886768.7U CN208298787U (en) | 2018-06-08 | 2018-06-08 | A kind of cleaning device of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820886768.7U CN208298787U (en) | 2018-06-08 | 2018-06-08 | A kind of cleaning device of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208298787U true CN208298787U (en) | 2018-12-28 |
Family
ID=64723946
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820886768.7U Active CN208298787U (en) | 2018-06-08 | 2018-06-08 | A kind of cleaning device of semiconductor wafer |
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| Country | Link |
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| CN (1) | CN208298787U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550519A (en) * | 2018-06-08 | 2018-09-18 | 东莞市中图半导体科技有限公司 | A kind of cleaning device of semiconductor wafer |
-
2018
- 2018-06-08 CN CN201820886768.7U patent/CN208298787U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550519A (en) * | 2018-06-08 | 2018-09-18 | 东莞市中图半导体科技有限公司 | A kind of cleaning device of semiconductor wafer |
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Address after: No.4, North Second Industrial Road, Songshanhu, Dongguan City, Guangdong Province 523000 Patentee after: Guangdong Zhongtu Semiconductor Technology Co., Ltd Address before: No.4, North Second Industrial Road, Songshanhu, Dongguan City, Guangdong Province 523000 Patentee before: DONGGUAN SINOPATT SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |