CN208297916U - Wavelength changing element and projection arrangement - Google Patents
Wavelength changing element and projection arrangement Download PDFInfo
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- CN208297916U CN208297916U CN201820897199.6U CN201820897199U CN208297916U CN 208297916 U CN208297916 U CN 208297916U CN 201820897199 U CN201820897199 U CN 201820897199U CN 208297916 U CN208297916 U CN 208297916U
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- changing element
- inorganic solid
- diffusing reflection
- wavelength
- wavelength changing
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Abstract
A kind of Wavelength changing element, including substrate, wavelength conversion layer and diffusing reflection layer.Wavelength conversion layer is configured above substrate.Diffusing reflection layer is configured between substrate and wavelength conversion layer.Diffusing reflection layer includes inorganic solid and multiple diffusing reflection particles, and multiple diffusing reflection particles are mixed in inorganic solid.Inorganic solid includes the inorganic solid of alcohol-soluble or water-soluble inorganic solid.The utility model separately provides a kind of projection arrangement using above-mentioned Wavelength changing element.
Description
Technical field
The utility model is especially with regard to a kind of Wavelength changing element and to use this wavelength about a kind of display device
The projection arrangement of conversion element.
Background technique
Light source type used in projection arrangement is as market is to projection arrangement brightness, color saturation, service life, nothing
Poison ring protect etc. require, from ultrahigh pressure mercury lamp (UHP lamp), light emitting diode (light emitting diode, LED) into
Change to laser diode (laser diode, LD).
The red laser diode of high brightness and the cost of green laser diode are excessively high at present, in order to reduce cost, lead to
Yellow light, green light are generated frequently with the fluorescent powder on blue laser diode excitated fluorescent powder runner, then via colour wheel (filter
Wheel) required feux rouges is filtered out, then the blue light for blue laser diode sending of arranging in pairs or groups, and constituted needed for projected picture
Red Green Blue.
Fluorescent powder runner is to use laser diode for element particularly important in the projection arrangement of light source at present.However,
The phosphor powder layer of known fluorescent powder runner is using high light transmission silica gel mixed fluorescent powder, due to high light transmission silica gel poor thermal conductivity and resistance to
Warm nature is low, therefore can not be in response to the demand of high-power laser projection device.In addition, in known fluorescent powder runner, diffuse-reflective material
Need to through greater than 400 DEG C hot setting and form diffusing reflection layer, the diffusing reflection layer after solidification have it is more porous, will cause glimmering
The decline of light powder runner reflectivity.
This " background technique " is partially used only to help to understand the content of the present invention, therefore is taken off in " background technique "
The content of dew may include some well-known techniques without constituting road known to those skilled in the art.In addition, in " background technique "
In disclosed content do not represent the content or the utility model one or more embodiment problem to be solved, also not
Representative has been readily known to those persons skilled in the art or has recognized before the present utility model application.
Utility model content
The utility model provides a kind of Wavelength changing element, can promote reflectivity.
The utility model provides a kind of projection arrangement, can promote image brilliance.
The other objects and advantages of the utility model can be obtained from the technical characteristic disclosed by the utility model into one
The understanding of step.
It is the wave provided by an embodiment of the present invention up to one of above-mentioned or partly or entirely purpose or other purposes
Long conversion element includes substrate, wavelength conversion layer and diffusing reflection layer.Wavelength conversion layer is configured above substrate.Diffusing reflection layer is matched
It is placed between substrate and wavelength conversion layer.Diffusing reflection layer includes inorganic solid and diffusing reflection particle, and diffusing reflection particle is mixed in
Inorganic solid.Inorganic solid includes the inorganic solid of alcohol-soluble or water-soluble inorganic solid.
It is that an embodiment of the present invention is provided to throw up to one of above-mentioned or part or all of purpose or other purposes
Image device includes lighting system, light valve and projection lens.Lighting system is adapted to provide for illuminating bundle.Light valve is configured at illuminating bundle
Transmission path on, illuminating bundle is converted into image strip.Projection lens is configured on the transmission path of image strip.Its
Middle lighting system includes excitation light source and above-mentioned Wavelength changing element.Excitation light source is adapted to provide for excitation beam.Wavelength convert
In on the transmission path of excitation beam, the wavelength conversion layer of Wavelength changing element is suitable for for excitation beam being converted into element configuration
Light beam is changed, and illuminating bundle includes commutating optical beam.
In the Wavelength changing element of the utility model embodiment, diffusing reflection layer includes inorganic solid and diffusing reflection particle,
Inorganic solid includes the inorganic solid of alcohol-soluble or water-soluble inorganic solid, due to use above-mentioned formula it is inorganic then
Agent, solidification temperature are only 200 DEG C~300 DEG C, and the solidification temperature compared to well known materials need to be greater than 400 DEG C, the utility model
The diffusing reflection layer of embodiment can improve the characteristic of the tiny hole that (> 400 DEG C) of high temperature sintering generate and easily absorption liquid, therefore can
Promote the reflectivity of Wavelength changing element.The projection arrangement of the utility model embodiment because using above-mentioned Wavelength changing element,
Therefore image brilliance can be promoted.
For the above-mentioned and other purposes of the utility model, feature and advantage can be clearer and more comprehensible, preferred reality is cited below particularly
Example is applied, and cooperates attached drawing, is described in detail below.
Detailed description of the invention
Fig. 1 is the schematic diagram of the Wavelength changing element of an embodiment of the present invention.
Fig. 2 is the light of an embodiment of the present invention in the schematic diagram for being formed by hot spot on Wavelength changing element.
Fig. 3 A is scan-type microscope (SEM) striograph of the diffusing reflection layer of well known high temperature sintering.
Fig. 3 B is the scan-type image of microscope figure of the diffusing reflection layer of an embodiment of the present invention.
Fig. 4 is the flow diagram of the manufacturing method of the Wavelength changing element of an embodiment of the present invention.
Fig. 5 A is the schematic diagram of the Wavelength changing element of another embodiment of the utility model.
Fig. 5 B is the schematic diagram of the Wavelength changing element of another embodiment of the utility model.
Fig. 6 is the block schematic diagram of the projection arrangement of an embodiment of the present invention.
Specific embodiment
In relation to addressing other technologies content, feature and effect before the utility model, in following cooperation with reference to one of attached drawing
In the detailed description of preferred embodiment, can clearly it present.The direction term being previously mentioned in following embodiment, such as: upper,
Under, it is left and right, front or rear etc., be only the direction with reference to annexed drawings.Therefore, the direction term used is for illustrating not to use
To limit the utility model.
Fig. 1 is the schematic diagram of the Wavelength changing element of an embodiment of the present invention.Referring to FIG. 1, the wave of the present embodiment
Long conversion element 100 includes substrate 110, wavelength conversion layer 120 and diffusing reflection layer 130.Wavelength changing element 100 is, for example, piece
The very best part, but not limited to this, in other embodiments, Wavelength changing element 100 is also possible to wavelength convert wheel, and substrate
110 be, for example, turntable.Wavelength conversion layer 120 is configured at 110 top of substrate.Diffusing reflection layer 130 is configured at substrate 110 and wavelength
Between conversion layer 120.Diffusing reflection layer 130 is mixed in inorganic for example including inorganic solid and diffusing reflection particle, diffusing reflection particle
Solid.Inorganic solid is for example including the inorganic solid of alcohol-soluble or water-soluble inorganic solid, and inorganic solid is consolidated
Changing temperature is 200 DEG C~300 DEG C.
Above-mentioned 110 material of substrate is, for example, metal, but not limited to this, metal is for example including aluminium, aluminium alloy, copper, copper
Alloy, aluminium nitride, silicon carbide etc..
Above-mentioned wavelength conversion layer 120 is for example including phosphorus glass (phosphor in glass, PIG), phosphor ceramic
(phosphor in ceramic, PIC), polycrystalline flourescent sheet, monocrystalline flourescent sheet or phosphorus silica gel (phosphor in silicon,
PIS), but not limited to this.
The ingredient of the inorganic solid of above-mentioned alcohol-soluble is for example comprising siloxanes and metal oxide.In metal oxide
Used metal is, for example, aluminium, titanium, zirconium etc..
The ingredient of above-mentioned water-soluble inorganic solid for example comprising silica solution, phosphate, glass cement and waterglass extremely
It is one of few.Transparent liquid is for example, presented in the property of such water-soluble inorganic solid before curing, and viscosity is less than
The penetrance of 1000cps, light are greater than 90%.
The material of above-mentioned diffusing reflection particle is, for example, white particles, and including titanium dioxide, silica, aluminium oxide,
Boron nitride and zirconium dioxide at least one.
Fig. 2 is the light of an embodiment of the present invention in the schematic diagram for being formed by hot spot on Wavelength changing element.Please
Referring to Figure 1 and Figure 2, when above-mentioned wavelength conversion layer 120 and diffusing reflection layer 130 to be configured on substrate 110, wavelength conversion layer
120 and diffusing reflection layer 130 on the direction A for being parallel to substrate 110 width D (two layers of same size in the present embodiment, therefore
Two layers of width is only represented with D) all need be greater than light in the hot spot S formed on Wavelength changing element 100 long axis B (in Fig. 2 with
The wavelength conversion layer 120 of top layer is illustrated), light is irradiated on Wavelength changing element 100, to promote the utilization of light
Rate.
Diffusing reflection layer 130 in the present embodiment includes inorganic solid and diffusing reflection particle, and inorganic solid includes that alcohol is molten
Property inorganic solid or water-soluble inorganic solid, there is hydroxyl (- OH) in the inorganic solid of above-mentioned formula, heat up in solidification
During, about in the case where 200 DEG C~300 DEG C, adjacent hydroxyl can be dehydrated and form bond.For example, water-soluble
The colloidal particle surface of silica solution in inorganic solid has a large amount of silanol group (Si-OH), during heating, colloid
Particle can be adjacent to each other, and adjacent hydroxyl can be dehydrated and form-Si-O-Si- key in silanol group, reaches cured effect.It is such
The solidification temperature of mode is only 200 DEG C~300 DEG C, and the solidification temperature compared to well known materials need to be greater than 400 DEG C, this is practical new
The diffusing reflection layer 130 of type embodiment can improve the characteristic of the tiny hole that (> 400 DEG C) of high temperature sintering generate and easily absorption liquid,
Therefore the reflectivity of Wavelength changing element 100 can be promoted.For the utility model embodiment, diffusing reflection layer 130 is for wavelength
Reflectivity for the light of 400nm~700nm is more than or equal to 92%.
Fig. 3 A is scan-type microscope (SEM) striograph of the diffusing reflection layer of well known high temperature sintering.Fig. 3 B is that this is practical
The scan-type image of microscope figure of the diffusing reflection layer of a novel embodiment.Fig. 3 A and Fig. 3 B is please referred to, two figures, the present embodiment are compared
Diffusing reflection layer 130 hole be less than well known diffusing reflection layer hole, be easier to light when being incident to diffusing reflection layer 130 anti-
It penetrates, therefore the diffusing reflection layer 130 of the present embodiment can promote the reflectivity of Wavelength changing element 100.
To reach above-mentioned diffusing reflection effect, thickness of the above-mentioned diffusing reflection layer 130 on the direction C perpendicular to substrate 110
Degree for example, 0.03mm~0.15mm, the partial size of diffusing reflection particle is, for example, 5nm~500nm.In addition, above-mentioned inorganic solid
The volume ratio for example 10%~80% of diffusing reflection layer 130 is accounted for, weight percent is, for example, 30%~70%.
Fig. 4 is the flow diagram of the manufacturing method of the Wavelength changing element of an embodiment of the present invention.Please refer to Fig. 1
And Fig. 4, the manufacturing method of the Wavelength changing element 100 of the present embodiment is the following steps are included: carry out step S101: above-mentioned is overflow
Reflecting layer 130 is formed in the surface of wavelength conversion layer 120.Specifically, being, for example, to be coated with or be printed in wave for diffusing reflection layer 130
The surface of long conversion layer 120, then make diffusing reflection layer 130 200 DEG C~300 DEG C at a temperature of solidified.
Then, it carries out step S102: diffusing reflection layer 130 is adhered to substrate 110.Specifically, above-mentioned wavelength convert
Element 100 for example further includes middle dielectric layer 140, and is coated on or is printed in diffusing reflection layer 130 by middle dielectric layer 140
Diffusing reflection layer 130 is adhered to substrate 110 by surface.
The material of above-mentioned middle dielectric layer 140 is for example including silica gel, epoxy resin or heat-conducting glue.It is above-mentioned preferable to reach
Diffusing reflection effect, when using silica gel or epoxy resin, thickness e.g., less than or equal to 0.05mm；When using heat-conducting glue,
Thickness e.g., less than or equal to 0.15mm, and the thermal coefficient of diffusing reflection layer need to be less than or equal to leading for middle dielectric layer 140
Hot coefficient, the thermal energy that the high-energy of incident ray is generated are conducted by heat-conducting glue, reach heat dissipation effect.
When manufacturing above-mentioned Wavelength changing element 100, diffusing reflection layer 130 and wavelength conversion layer 120 are being parallel to substrate
Width D on 110 direction A can be it is identical or different, however to reach preferable diffusing reflection effect, diffusing reflection layer 130 with
The width of both wavelength conversion layers 120 is, for example, 0.7~1.5 than range.In addition, in the embodiment including middle dielectric layer 140
In, width D of the middle dielectric layer 140 on the direction A for being parallel to substrate 110 for example needs the width D greater than diffusing reflection layer 130,
So that the overall structure that diffusing reflection layer 130 is adhered to Wavelength changing element 100 after substrate 110 is more firm, alternatively, intermediate medium
Width D of the layer 140 on the direction A for being parallel to substrate 110 for example needs the long axis B greater than above-mentioned hot spot S, to reach heat dissipation
Effect.The coating condition in different embodiments will be illustrated below.
It please refer to Fig. 1, in the Wavelength changing element 100 of Fig. 1, wavelength conversion layer 120, diffusing reflection layer 130 and intermediate be situated between
Width D (hereinafter referred to as width) of the matter layer 140 on the direction A for being parallel to substrate 110 is for example, identical.Fig. 5 A is this reality
With the schematic diagram of the Wavelength changing element of novel another embodiment.Fig. 5 B is the wavelength convert member of another embodiment of the utility model
The schematic diagram of part.Fig. 5 A and Fig. 5 B is please referred to, is less than the width D 2 of wavelength conversion layer 120 in the width D 1 of diffusing reflection layer 130a
In embodiment (Fig. 5 A), when middle dielectric layer 140a is coated on diffusing reflection layer 130a, such as the periphery of middle dielectric layer 140a
The two sides of extensible cladding diffusing reflection layer 130a are simultaneously directly coated at wavelength conversion layer 120, enable wavelength conversion layer 120
More firm is adhered to substrate 110, makes the overall structure of Wavelength changing element 100a more stable.And in the width of diffusing reflection layer 130b
It spends in the embodiment of width D 4 of the D3 greater than wavelength conversion layer 120b (Fig. 5 B), diffusing reflection layer 130b is coated on wavelength conversion layer
When 120b, the periphery of diffusing reflection layer 130b can for example coat the two sides of wavelength conversion layer 120b, so can also allow wavelength convert
The overall structure of element 100b is more stable.
Fig. 6 is the block schematic diagram of the projection arrangement of an embodiment of the present invention.Referring to FIG. 6, in the present embodiment
In, above-mentioned Wavelength changing element 100 is, for example, wavelength convert wheel, and substrate 110 therein is, for example, turntable.The throwing of the present embodiment
Image device 1 includes lighting system 10, light valve 20 and projection lens 30.Lighting system 10 is adapted to provide for illuminating bundle L1.Illumination system
System 10 includes excitation light source 11 and above-mentioned Wavelength changing element 100 (wavelength convert wheel).Excitation light source 11 is adapted to provide for exciting
Light beam Le.Wavelength changing element 100 is configured on the transmission path of excitation beam Le, and including wavelength-converting region (not shown).
Wavelength-converting region includes above-mentioned wavelength conversion layer 120 and diffusing reflection layer 130, and the wavelength-converting region of Wavelength changing element 100 is suitable
In excitation beam Le is converted into commutating optical beam Lp, and it includes commutating optical beam Lp that illuminating bundle L1, which is, but not limited to this.Illumination
System 10 can further include other optical elements, such as: light combination element, colour wheel, light uniformization element and collector lens, so that illumination
Light beam L1 is transferred to light valve 20.Light valve 20 is configured on the transmission path of illuminating bundle L1, and illuminating bundle L1 is converted into shadow
As light beam L2.Light valve 20 can be perforation light-valve or optical valve in reflection type, and wherein perforation light-valve can be liquid crystal display panel,
And optical valve in reflection type can be digital micromirror elements (digital micro-mirror device, DMD) or liquid crystal on silicon face
Plate (liquid crystal on silicon panel, LCoS panel).According to different design architectures, the quantity of light valve can
For one or more.Projection lens 30 is configured on the transmission path of image strip L2, and for projecting image strip L2
Projection arrangement 1.
It is by taking the Wavelength changing element 100 of Fig. 1 as an example in Fig. 6, but Wavelength changing element 100 is alternatively at any of the above-described
The Wavelength changing element of embodiment.
The projection arrangement 1 of the present embodiment due to use the above-mentioned Wavelength changing element 100 for promoting reflectivity, 100a,
100b, therefore image brilliance can be promoted.For example, will use material is that the wavelength conversion layer of phosphorus glass adds the utility model real
It applies the Wavelength changing element 100 of the diffusing reflection layer 130 of example and is added using the wavelength conversion layer that material is phosphorus glass known unrestrained anti-
The Wavelength changing element for penetrating layer carries out integrating sphere brightness measurement, the Wavelength changing element 100 of the utility model embodiment compared to
Using the Wavelength changing element of known diffusing reflection layer, brightness can promote about 3%.
In conclusion diffusing reflection layer includes inorganic solid and overflows in the Wavelength changing element of the utility model embodiment
Reflective particle, inorganic solid includes the inorganic solid of alcohol-soluble or water-soluble inorganic solid, due to using above-mentioned formula
Inorganic solid, solidification temperature are only 200 DEG C~300 DEG C, and the solidification temperature compared to well known materials need to be greater than 400 DEG C, this
The diffusing reflection layer of utility model embodiment can improve the spy of the tiny hole that (> 400 DEG C) of high temperature sintering generate and easily absorption liquid
Property, therefore the reflectivity of Wavelength changing element can be promoted.The production method of the Wavelength changing element of the utility model embodiment by
In the above-mentioned inorganic solid of use, therefore above-mentioned Wavelength changing element can be produced.The throwing of the utility model embodiment
Image device can promote image brilliance because using above-mentioned Wavelength changing element.
Only as described above, the only preferred embodiment of the utility model, when the utility model cannot be limited with this
The range of implementation, i.e., all simple equivalence changes made according to the utility model claims book and utility model content with repair
Change, all still belongs in the range that the utility model patent covers.In addition, any embodiment or claim of the utility model are not necessary to
Reach the disclosed whole purpose of the utility model or advantage or feature.In addition, abstract and topic are intended merely to auxiliary patent text
Part search is used, and not is used to limit the interest field of the utility model.In addition, referred in this specification or claims
The terms such as " first ", " second " are not only to name the title or the different embodiments of difference or range of element (element)
For the quantitative upper limit of restriction element or lower limit.
Appended drawing reference:
1: projection arrangement
10: lighting system
11: excitation light source
20: light valve
30: projection lens
100,100a, 100b: Wavelength changing element
110: substrate
120,120b: wavelength conversion layer
130,130a, 130b: diffusing reflection layer
140,140a: middle dielectric layer
A: parallel direction
C: vertical direction
B: long axis
D, D1, D2, D3, D4: width
L1: illuminating bundle
L2: image strip
Le: excitation beam
Lp: commutating optical beam
S: hot spot
S101, S102: step.
Claims (12)
1. a kind of Wavelength changing element, which is characterized in that including substrate, wavelength conversion layer and diffusing reflection layer:
The wavelength conversion layer side of being disposed on the substrate；And
The diffusing reflection layer is configured between the substrate and the wavelength conversion layer, and the diffusing reflection layer includes inorganic solid
And multiple diffusing reflection particles, the multiple diffusing reflection particle are mixed in the inorganic solid, the inorganic solid includes alcohol
Insoluble inorganic solid or water-soluble inorganic solid.
2. Wavelength changing element as described in claim 1, which is characterized in that the inorganic solid is that the alcohol-soluble is inorganic
Solid, the ingredient of the inorganic solid of alcohol-soluble include siloxanes and metal oxide.
3. Wavelength changing element as described in claim 1, which is characterized in that the inorganic solid is the water-soluble inorganic
Solid, the ingredient of the water-soluble inorganic solid include silica solution, phosphate, glass cement and waterglass at least within it
One.
4. Wavelength changing element as described in claim 1, which is characterized in that the Wavelength changing element further includes intermediate medium
Layer, is configured between the substrate and the diffusing reflection layer.
5. Wavelength changing element as claimed in claim 4, which is characterized in that the material of the middle dielectric layer include silica gel,
Epoxy resin or heat-conducting glue.
6. Wavelength changing element as claimed in claim 5, which is characterized in that the thermal coefficient of the diffusing reflection layer is less than or waits
In the thermal coefficient of the middle dielectric layer.
7. Wavelength changing element as described in claim 1, which is characterized in that the material of the multiple diffusing reflection particle includes two
Titanium oxide, silica, aluminium oxide, boron nitride and zirconium dioxide at least one.
8. Wavelength changing element as described in claim 1, which is characterized in that the diffusing reflection layer and the wavelength conversion layer exist
The width ratio being parallel on the direction of the substrate is 0.7~1.5.
9. Wavelength changing element as described in claim 1, which is characterized in that the solidification temperature of the inorganic solid is 200
DEG C~300 DEG C.
10. Wavelength changing element as described in claim 1, which is characterized in that the wavelength conversion layer includes phosphorus glass, phosphorescence
Body ceramics, polycrystalline flourescent sheet, monocrystalline flourescent sheet or phosphorus silica gel.
11. Wavelength changing element as described in claim 1, which is characterized in that the Wavelength changing element is wavelength convert wheel,
The substrate is turntable.
12. a kind of projection arrangement, which is characterized in that including lighting system, light valve and projection lens,
The lighting system is adapted to provide for illuminating bundle,
The light valve is configured on the transmission path of the illuminating bundle, and the illuminating bundle is converted into image strip,
The projection lens is configured on the transmission path of the image strip,
Wherein the lighting system includes excitation light source and Wavelength changing element:
The excitation light source is adapted to provide for excitation beam；And
The Wavelength changing element is configured on the transmission path of the excitation beam, the wavelength of the Wavelength changing element
Conversion layer is suitable for the excitation beam being converted into commutating optical beam, and the illuminating bundle includes the commutating optical beam, and wherein
The Wavelength changing element includes substrate, wavelength conversion layer and diffusing reflection layer:
The wavelength conversion layer side of being disposed on the substrate；And
The diffusing reflection layer is configured between the substrate and the wavelength conversion layer, and the diffusing reflection layer includes inorganic solid
And multiple diffusing reflection particles, the multiple diffusing reflection particle are mixed in the inorganic solid, the inorganic solid includes alcohol
Insoluble inorganic solid or water-soluble inorganic solid.
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| CN201820897199.6U CN208297916U (en) | 2018-06-11 | 2018-06-11 | Wavelength changing element and projection arrangement |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020211091A1 (en) * | 2019-04-19 | 2020-10-22 | Materion Precision Optics (Shanghai) Limited | High temperature resistant reflective layer for wavelength conversion devices |
| CN112748565A (en) * | 2019-10-30 | 2021-05-04 | 中强光电股份有限公司 | Wavelength conversion element, projection device and manufacturing method of wavelength conversion element |
-
2018
- 2018-06-11 CN CN201820897199.6U patent/CN208297916U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020211091A1 (en) * | 2019-04-19 | 2020-10-22 | Materion Precision Optics (Shanghai) Limited | High temperature resistant reflective layer for wavelength conversion devices |
| WO2020211824A1 (en) * | 2019-04-19 | 2020-10-22 | Materion Precision Optics (Shanghai) Limited | High temperature resistant reflective layer for wavelength conversion devices |
| CN113614635A (en) * | 2019-04-19 | 2021-11-05 | 美题隆精密光学（上海）有限公司 | High temperature resistant reflective layer for wavelength conversion devices |
| US11762190B2 (en) | 2019-04-19 | 2023-09-19 | Materion Precision Optics (Shanghai) Limited | High temperature resistant reflective layer for wavelength conversion devices |
| CN112748565A (en) * | 2019-10-30 | 2021-05-04 | 中强光电股份有限公司 | Wavelength conversion element, projection device and manufacturing method of wavelength conversion element |
| CN112748565B (en) * | 2019-10-30 | 2024-01-23 | 中强光电股份有限公司 | Wavelength conversion element, projection device, and method for manufacturing wavelength conversion element |
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