CN208271934U - A kind of package support of high photosynthetic efficiency ultraviolet LED - Google Patents
A kind of package support of high photosynthetic efficiency ultraviolet LED Download PDFInfo
- Publication number
- CN208271934U CN208271934U CN201820481035.5U CN201820481035U CN208271934U CN 208271934 U CN208271934 U CN 208271934U CN 201820481035 U CN201820481035 U CN 201820481035U CN 208271934 U CN208271934 U CN 208271934U
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- Prior art keywords
- tablet
- enclosing
- ultraviolet led
- ceramic substrate
- chip
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- 230000000243 photosynthetic effect Effects 0.000 title claims abstract description 17
- 239000000919 ceramic Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000004411 aluminium Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 17
- 230000001681 protective effect Effects 0.000 claims abstract description 15
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims abstract description 11
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 11
- 239000004593 Epoxy Substances 0.000 claims abstract description 8
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 abstract description 8
- 239000004033 plastic Substances 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
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- 230000001954 sterilising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a kind of package supports of high photosynthetic efficiency ultraviolet LED, including plane ceramic substrate, and the enclosing tablet with reflector, the reflector inwall surface is vapor-deposited with fine aluminium mirror surface film and is covered with magnesium fluoride protective film；The enclosing tablet is thermoset epoxy capsulation material, which presses with ceramic substrate bonding；The chip of the ultraviolet LED is fixed on the ceramic substrate in reflector, and the chip of the LED includes positive and negative electrode, and positive and negative anodes connection is completed on ceramic substrate.The reflector plastics enclosing tablet that aluminium film is deposited by the way that surface is arranged on ceramic substrate, is remarkably improved the extracting power of UV LED chip side light, while by ceramic substrate to chip cooling, while guaranteeing the reliability of device performance.
Description
Technical field
The present invention relates to ultraviolet LED encapsulation field, specifically a kind of package support of high photosynthetic efficiency ultraviolet LED.
Background technique
As LED technology continues to develop, the emission wavelength of LED is extended to deep ultraviolet band via visible light wave range, purple
A branch of the outer LED as LED, it has high surface light emissions intensity, is widely applied to the neck such as hardening of resin, printing
Domain, and towards market developments such as sterilization, disinfections, the application of ultraviolet LED is with the maturation of its technology and the reduction of cost, it will more
Extensively,
Since there are a large amount of dislocation densities by LED chip epitaxial material ALN for deep ultraviolet (280~100nm of UVC wave-length coverage)
Cause LED chip electro-optical efficiency low.Simultaneously because ultraviolet LED has high radiation energy and high calorific value, current envelope
Dress form is mainly using the inorganic material such as copper ceramic substrate bracket and quartz glass are covered, although ceramic substrate has very high stabilization
Property and heat-sinking capability, but its outer wall copper clad layers is very low to the short-wavelength light reflectivity of deep ultraviolet LED, causes its secondary heat absorption same
When side light cannot efficiently use, as Chinese patent (application number CN201710334523) discloses a kind of encapsulation of ultraviolet LED
Device, the groove that aluminium oxide ceramic substrate is equipped with have reflecting cup structure, and side wall is inclined surface, the smooth table formed with copper coating
Face can effectively reflect ultraviolet light.Therefore the efficiency of light extraction and heat dissipation for improving deep ultraviolet LED encapsulation, are ultraviolet LED encapsulation fields
Emphasis direction.
With advancing by leaps and bounds for semiconductor technologies, other than filling photoelectric characteristic of the part with various semiconductor materials, mirror
Face metallic reflective coating also plays the part of considerable status.It can reflect back incident laser energy major part or almost all, plating
The common material of metallic reflective coating processed has aluminium (A1), silver-colored (Ag), golden (Au) etc., and aluminium film is that all have from ultra-violet (UV) band to infrared region very
The sole material of high reflectance, reflectivity are about 90% or so.Its advantage is that being easily worked, reflectivity is high and is not easy burn into exists
Reflectivity in humid air can remain unchanged for a long period of time etc..
Since most metal films are all relatively soft, it is easily damaged, so usually add plating layer protecting film again outside metal film, this
Sample can improve intensity and protect metal film not by atmospheric corrosion.But it has plated protective film back reflection rate and has had certain decline,
Most common protective film is silicon monoxide, aluminium oxide etc..But as the aluminium film in ultraviolet reflectance face cannot with silicon monoxide or
Aluminium oxide is as protective film, because it has significant absorption in ultra-violet (UV) band, and uses magnesium fluoride or lithium fluoride as preventing alumina
Protective film, then can be very good control aluminium film reflectivity decline.
Chinese patent, application number: CN201320794398 discloses a kind of LED package support of all-metal structure, the branch
The rack body (1) with spill reflector (11) is made of metal plate for frame；It is opposite two with high temperature insulation adhesive layer (2)
The upper surface that independently separated sheet metal (3) is fixed on the rack body (1) forms one and has under the conditions of insulation protection
The integrated all-metal LED package support of input and output electrode；LED chip (4) is fixed on the spill reflector (11)
Upper surface, described two sheet metals (3) form electrical connection between the one end and LED chip (4) of LED chip (4)；Or
The coating being electrically connected can be done with the LED chip (4) in the upper surface Direct precipitation of the spill reflector (11)；The branch
The lower surface of frame ontology (1) is welded with heat dissipation metal substrate, and the heat dissipation metal substrate surface has silver, nickel, tin plated material.So
And the prior art, although increasing heat dissipation effect, also brings along some potential safety problems due to using metal substrate, together
When the structure LED chip light extracting power be also not very high.
Summary of the invention
The purpose of the present invention is in view of the deficienciess of the prior art, providing a kind of LED package support, which is adopted
It is remarkably improved deep ultraviolet LED chip light extracting power with new structure, the invention is realized by the following technical scheme:
A kind of package support of high photosynthetic efficiency ultraviolet LED, it is characterized in that: including plane ceramic substrate 301, have reflector
102 enclosing tablet 101,102 inner wall surface of reflector are vapor-deposited with fine aluminium mirror surface film and are covered with magnesium fluoride protective film；
The enclosing tablet 101 be thermoset epoxy capsulation material, 101 baseplane of enclosing tablet and ceramic substrate bonding pressing and
At；The chip of the ultraviolet LED is fixed on the ceramic substrate in reflector, and the chip of the LED includes positive and negative electrode,
Positive and negative anodes connection is completed on ceramic substrate.
Further, groove is arranged in 101 top of enclosing tablet, places quartz glass cover, quartz glass in groove
Cover is bonded with groove, and the ultraviolet LED is formed by cutting separation of ceramic and tablet.
Further, the enclosing tablet is designed to that 40-45 degree bell mouth shape reflects cup structure, ultraviolet in favor of reflecting
The light of the chip sides of LED；
Further, the enclosing tablet injection temperature 180 degree；Injection pressure 7-18MPa；Time 90-120S；
Further, the mirror metal aluminium layer of the plastics enclosing web surface vapor deposition 99.99%, is deposited cavity inner temperature
About 40-50 degree, evaporation rate is greater than 40nm/s, while the pressure of vacuum chamber will maintain 1.3x10-4Pa or lower, and should be as far as possible
Reduce the oxidation of aluminium；
Further, mirror surface aluminum layer thickness 1-1.5um is deposited in the enclosing tablet；
Further, the chip peak value with a thickness of ultraviolet LED of magnesium fluoride protective film on aluminium layer is deposited in the enclosing tablet
The 1/2 of wavelength, generally 0.12-0.18um, evaporation rate control are 2-5nm/s；
Further, the plastics enclosing tablet adhesive surface finished, which is deposited, to be ground, to remove film plating layer, it is ensured that bonding
Intensity.
Further, plastics enclosing tablet need to be bonded with ceramic substrate, and binding material is thermosetting plastics adhesive,
Thickness about 20-30um is bonded, is made of following ratio: vinyl acetate resin 40-70%, zinc oxide 5-10%, stearic acid 5-
10%, dimethylbenzene 10-20%, chloroform 10-20%；
Further, plastics enclosing tablet and ceramic substrate bonding, which finish, need to carry out pressing solidification, and press equipment is using true
Dead level press, curing time 10-20s.
Further, the anti-UV glue of coating in plastics enclosing tablet upper grooves, the interior quartz glass cover of placing of groove are made
For the protection of LED chip.
Compared with prior art, the present invention has the positive effect that:
1, the present invention is bevel structure and its mirror by the way that reflection cup structure enclosing tablet, reflector are arranged on ceramic substrate
Face aluminium coated jointly effectively reflects ultraviolet light, can be sufficiently by ultraviolet LED side compared to now plane ceramic encapsulating structure is commonly used
The light reflection in face extracts.
2, enclosing tablet of the present invention uses heat cured epoxy material, and thermoset epoxy materials have very strong wetting capacity,
Processability is good, and bulk density is easy to be injection moulded greatly, can avoid with LED chip binding site AM aluminum metallization reflecting layer ultraviolet
LED radiation damage, while thermosetting plastics splicing easier than thermoplastic.
3, the present invention bonds ceramic substrate using resinoid, and hot setting adhesive is hot, catalyst independent
Or a kind of adhesive of chemical bond is formed under synergy, it is not readily dissolved after solidifying, and has good creep-resistant property, each
There is good durability in kind heat, cold environment.The bonding is the dissolution that the bond site of plastics to be bonded is micro, is made it combine
Strength greatly reinforces, without bonding the problem of falling off after worrying long-time.
4, one layer of fine aluminium mirror surface film is deposited in its surface of enclosing tablet of the present invention, relative to other metal material silver
(Ag), for golden (Au), metallic aluminium is all to have very high reflectance from ultra-violet (UV) band to infrared region to ultraviolet reflectivity highest
Sole material, reflection and wavelength near linear linear relationship of the aluminium film to light, change rate minimum such as Fig. 6 in visible-range
It is shown.
5, the present invention covers magnesium fluoride protective film in fine aluminium film surface, and magnesium fluoride coating securely can be very well as preventing
The protective film of alumina can prevent aluminium film from scratching and aoxidizing.Most common protective film is silicon monoxide, but as ultraviolet reflectance face
Aluminium film cannot make protective film with silicon monoxide or aluminium oxide because it has significant absorption in ultra-violet (UV) band.
6, it is substrate that the present invention, which can select aluminium nitride or aluminium oxide ceramics according to the watt level of LED chip, as ultraviolet
The carrier of LED chip completes circuit connection, has good heat spreading function, avoids UV LED chip heat dissipation is bad from leading to light decay
Or initial failure.
Detailed description of the invention
Fig. 1 is the schematic perspective view of the package support of high photosynthetic efficiency ultraviolet LED of the present invention；
Fig. 2, Fig. 3 are 101 plane of enclosing tablet and A-A cross-section structure in the package support of high photosynthetic efficiency ultraviolet LED of the present invention
Schematic diagram；
The package support front view of Fig. 4 high photosynthetic efficiency ultraviolet LED；
The package support B-B cross-sectional view of Fig. 5 high photosynthetic efficiency ultraviolet LED；
One layer of fine aluminium mirror surface film is deposited in enclosing web surface in the package support of Fig. 6 high photosynthetic efficiency ultraviolet LED of the present invention,
Reflection and wavelength linear relationship of the aluminium film to light in visible-range.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, and the present embodiment is with technical solution of the present invention
Premised under implemented.
Embodiment:
A kind of package support of high photosynthetic efficiency ultraviolet LED, it is characterized in that: including plane ceramic substrate 301, have reflector
102 enclosing tablet 101,102 inner wall surface of reflector are vapor-deposited with fine aluminium mirror surface film and are covered with magnesium fluoride protective film；
The enclosing tablet 101 be thermoset epoxy capsulation material, 101 baseplane of enclosing tablet and ceramic substrate bonding pressing and
At；The chip of the ultraviolet LED is fixed on the ceramic substrate in reflector, and the chip of the LED includes positive and negative electrode,
Positive and negative anodes connection is completed on ceramic substrate.
Shown in Figure 1, upper part is thermoset epoxy plastic packaging enclosing tablet 101, is equipped with reflector in enclosing tablet
102, enclosing tablet bottom is coated with hot setting adhesive 201, and enclosing tablet and plane ceramic substrate 301 pass through adhesive 201
Bonding presses.
Referring to fig. 2, shown in 3, according to device package dimension and light distribution requirements design reflector 102 and groove 107, reflector
It is general to select 40-45 degree beam angle, depth about 0.7mm, upper grooves depth about 0.2mm, the chemical conversion of enclosing tablet selection Hitachi
CEL-W-7005 type heat cured epoxy material is injection moulded in injector, injection temperature 180 degree；Injection pressure 7-18MPa；When
Between 90-120S.Injection process makes material flow through heated machine barrel, compression removing air and heated material acquisition using a screw rod
Low viscosity makes screw rod propelled at high velocity in low viscosity material press-in die with hydraulic, and die cavity pressure if being filled maintains
10-30 seconds, then mold closing mechanism is opened in subsequent release, ejects product.
Injection molding enclosing tablet is placed in vacuum coating equipment, the metallic aluminium of purity 99.99% is heated to
600-1200 degree generates metal vapors and enclosing tablet is deposited, and cavity inner temperature about 40-50 degree is deposited, and evaporation rate is greater than
40nm/s, while the pressure of vacuum chamber will maintain 1.3x10-4Pa or lower, and the oxidation of aluminium, enclosing should be reduced to the greatest extent
103 thickness control of tablet mirror surface aluminium coat is 1-1.5um.
The enclosing tablet of the complete aluminium film of above-mentioned plating is placed in vacuum coating equipment, uses magnesium fluoride as target, evaporation rate
0.12-0.18um magnesium fluoride protective film 104 is deposited in 2-5nm/s in aluminium film.
The back side 106 of enclosing tablet finished is deposited to be ground and cleared up, it is ensured that adhesive surface is peace and quiet, without greasy dirt.
Fig. 4 and Fig. 5 is the plane and B-B the schematic diagram of the section structure of ultraviolet LED package support of the present invention, in enclosing tablet
106 combine 301 position of ceramic substrate, coat the resinoid 201 of 20-30um thickness, answer uniform gluing by maxxaedium, to protect
Card infiltration avoids bubble from generating, and adhesive is made of the raw material of following ratio: vinyl acetate resin 40-70%, zinc oxide 5-
10%, stearic acid 5-10%, dimethylbenzene 10-20%, chloroform 10-20%.
Adhesive is so that its glue-line is become the process of solid by chemically and physically acting on, and when solidification applies certain pressure
The scattering and permeating for being conducive to adhesive, avoid generate bubble, hole and make glue-line uniformly and fixed with adherend position.Pass through glue
Enclosing tablet 101 made of stick 201 bonds and plane ceramic substrate 301 are placed in vacuum laminator for enclosing tablet and ceramics
Substrate pressing solidification, curing time 10-20s contact enclosing tablet with plane ceramic substrates into intimate.
It selects suitable UV LED chip 401 to be fixed on the ceramic substrate in reflector, and is completed on ceramic substrate
Positive and negative anodes connect work.
Anti- UV glue is coated in enclosing tablet upper grooves 107, is placed quartz glass cover in groove and is solidified, most
The uv-LED device is obtained by cutting separation of ceramic and tablet afterwards.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the limit of above-described embodiment
System, other are any without departing from the modification, combination or substitution made under the principle of the present invention, are included in protection scope of the present invention
Within.
Claims (6)
1. a kind of package support of high photosynthetic efficiency ultraviolet LED, it is characterized in that: including plane ceramic substrate, the enclosing with reflector
Tablet, the reflector inwall surface are vapor-deposited with fine aluminium mirror surface film and are covered with magnesium fluoride protective film；The enclosing tablet is
Thermoset epoxy capsulation material, the enclosing tablet baseplane are pressed with ceramic substrate bonding；The chip of the ultraviolet LED is solid
Due on the ceramic substrate in reflector, the chip of the LED includes positive and negative electrode, and positive and negative anodes are completed on ceramic substrate and are connected
It connects.
2. the package support of high photosynthetic efficiency ultraviolet LED as described in claim 1, it is characterised in that: enclosing tablet top is set
Groove is set, places quartz glass cover in groove, quartz glass cover is bonded with groove, and the ultraviolet LED passes through cutting
Separation of ceramic and tablet form.
3. the package support of high photosynthetic efficiency ultraviolet LED as described in claim 1, it is characterised in that: the enclosing tablet is designed to
40-45 degree bell mouth shape reflects cup structure, in favor of the light of the chip sides of reflection ultraviolet LED.
4. the package support of high photosynthetic efficiency ultraviolet LED as described in claim 1, it is characterised in that: the vapor deposition of the enclosing tablet
Mirror surface aluminum layer thickness 1-1.5um.
5. the package support of high photosynthetic efficiency ultraviolet LED as described in claim 1, it is characterised in that: the vapor deposition of the enclosing tablet
The 1/2 of the chip peak wavelength with a thickness of ultraviolet LED of magnesium fluoride protective film on aluminium layer.
6. the package support of high photosynthetic efficiency ultraviolet LED as described in claim 1, it is characterised in that: enclosing tablet top is set
Groove is set, groove depth 0.1-0.2mm, the interior setting quartz glass cover of groove is to sealed LED chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820481035.5U CN208271934U (en) | 2018-04-03 | 2018-04-03 | A kind of package support of high photosynthetic efficiency ultraviolet LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820481035.5U CN208271934U (en) | 2018-04-03 | 2018-04-03 | A kind of package support of high photosynthetic efficiency ultraviolet LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208271934U true CN208271934U (en) | 2018-12-21 |
Family
ID=64676553
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820481035.5U Expired - Fee Related CN208271934U (en) | 2018-04-03 | 2018-04-03 | A kind of package support of high photosynthetic efficiency ultraviolet LED |
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| CN (1) | CN208271934U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321283A (en) * | 2018-04-03 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of package support and its packaging method of specular removal ultraviolet LED |
| CN111370552A (en) * | 2020-03-19 | 2020-07-03 | 广东格斯泰气密元件有限公司 | Method for assembling plane glass optical window on SMD support |
| TWI701096B (en) * | 2019-02-01 | 2020-08-11 | 立誠光電股份有限公司 | Lds optical device and manufacturing processes thereof |
| CN111669888A (en) * | 2019-03-06 | 2020-09-15 | 立诚光电股份有限公司 | Three-dimensional circuit structure and process for optical device |
-
2018
- 2018-04-03 CN CN201820481035.5U patent/CN208271934U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321283A (en) * | 2018-04-03 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of package support and its packaging method of specular removal ultraviolet LED |
| TWI701096B (en) * | 2019-02-01 | 2020-08-11 | 立誠光電股份有限公司 | Lds optical device and manufacturing processes thereof |
| CN111669888A (en) * | 2019-03-06 | 2020-09-15 | 立诚光电股份有限公司 | Three-dimensional circuit structure and process for optical device |
| CN111370552A (en) * | 2020-03-19 | 2020-07-03 | 广东格斯泰气密元件有限公司 | Method for assembling plane glass optical window on SMD support |
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Granted publication date: 20181221 |