CN208270710U - A circuit for detecting whether the MOS tube is good or bad and the size of the load - Google Patents
A circuit for detecting whether the MOS tube is good or bad and the size of the load Download PDFInfo
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- CN208270710U CN208270710U CN201820711865.2U CN201820711865U CN208270710U CN 208270710 U CN208270710 U CN 208270710U CN 201820711865 U CN201820711865 U CN 201820711865U CN 208270710 U CN208270710 U CN 208270710U
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- 239000004065 semiconductor Substances 0.000 description 30
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- 238000005516 engineering process Methods 0.000 description 2
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Abstract
The utility model discloses a detect MOS pipe good or bad and circuit of load size, including triode Q1, triode Q2, triode Q3, the base of Q1 passes through resistance R2 ground connection, the base of Q1 passes through adjusting resistance R1, the base of Q3 passes through resistance R7 and connects input voltage signal ON _ NTC _ MCU, the collecting electrode of Q1 passes through adjusting resistance R3 and is connected with the base of Q2, the emitter ground connection of Q1, connect adjusting resistance R4 between the base of Q2 and the emitter, the emitter connection power B + of Q2, the collecting electrode of Q2 passes through resistance R5, the collecting electrode of Q3 passes through resistance R6 and is connected with the drain electrode DD of MOS pipe, the emitter connection voltage sampling unit of Q3, be used for gathering the emitter voltage VO L P of Q3.
Description
Technical field
The utility model relates to the circuits of field of circuit technology more particularly to a kind of detection metal-oxide-semiconductor quality and payload size.
Background technique
The stability of electronic circuit has a great impact for the working performance of device, and input power is by extraneous small dry
Device working condition or service life in circuit can all be affected by disturbing, and the pulse amplitude sometimes changed is very high and is easy to burn out device.
The circuit of metal-oxide-semiconductor quality and payload size is detected, be exactly detection metal-oxide-semiconductor source electrode (s) is realized in N-channel MOS pipe switching circuit
With drain electrode (d) with the presence or absence of short circuit, and the size of external loading of access calculates, and knows in circuit in advance and institute is with each of load
Kind information, so that corresponding strategy is made, so that the more stable safety of electronic product
Therefore, the technical problem that those skilled in the art need urgently to solve is exactly: how to innovate
It proposes a kind of measure, a kind of circuit for detecting metal-oxide-semiconductor quality and payload size is provided, so that the more stable safety of electronic product.
Utility model content
To solve the above problems, the utility model discloses the circuits of a kind of detection metal-oxide-semiconductor quality and payload size, with solution
Certainly problems of the prior art.
The detection metal-oxide-semiconductor quality and the circuit of payload size include:
Triode Q1, triode Q2, triode Q3；
The base stage of the triode Q1 is grounded by resistance R2, by adjusting resistance R1 connection input voltage signal ON_
NTC_MCU；
The collector of the triode Q1 is connect by adjusting resistance R3 with the base stage of the triode Q2；
The emitter of the triode Q1 is grounded；
Connection adjusts resistance R4, the emitter connection of the triode Q2 between the base stage and emitter of the triode Q2
Power supply B+；
The collector of the triode Q2 passes through the drain D D connection of resistance R5 and metal-oxide-semiconductor；
The base stage of the triode Q3 passes through resistance R7 connection input voltage signal ON_NTC_MCU；
The collector of the triode Q3 passes through the drain D D of resistance R6 connection metal-oxide-semiconductor；
The emitter of the triode Q3 is grounded by resistance R8；
The emitter of the triode Q3 connects voltage sampling unit, for acquiring the emitter voltage of the triode Q3
VOL P-。
In another embodiment of circuit based on above-mentioned detection metal-oxide-semiconductor quality and payload size, the adjusting resistance R5
Resistance value be 200K ohm.
In another embodiment of circuit based on above-mentioned detection metal-oxide-semiconductor quality and payload size, the adjusting resistance R6
Resistance value be 75K ohm.
In another embodiment of circuit based on above-mentioned detection metal-oxide-semiconductor quality and payload size, the input voltage letter
Number ON_NTC_MCU is provided by single-chip microcontroller STM32.
In another embodiment of circuit based on above-mentioned detection metal-oxide-semiconductor quality and payload size, the adjusting resistance R1,
Adjusting resistance R3, adjusting resistance R4 is adjustable resistance, is become by the resistance value of adjusting resistance R1, adjusting resistance R3, adjusting resistance R4
Change, the working condition of control triode Q1, triode Q2, triode Q3.
Compared with prior art, the utility model includes following advantages:
The detection metal-oxide-semiconductor quality of the utility model and the circuit of payload size by N-channel MOS pipe switching circuit,
It realizes and detects metal-oxide-semiconductor source electrode (s) and drain electrode (d) with the presence or absence of short circuit, and the size of the external loading accessed calculates, and knows in advance
In road circuit and with the various information carried, to make corresponding strategy, so that the more stable safety of electronic product, functionally
The characteristics of more intelligence is powerful, has peripheral circuit simple, and precision is high, flexible in application, high reliablity.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing used in description of the prior art does one and simply introduces, it should be apparent that, the accompanying drawings in the following description is this reality
Without creative efforts, may be used also for those of ordinary skill in the art with novel some embodiments
To obtain other drawings based on these drawings.
Fig. 1 is the circuit structure of one embodiment of the detection metal-oxide-semiconductor quality of the utility model and the circuit of payload size
Schematic diagram.
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the reality in the utility model
Example is applied, every other embodiment obtained by those of ordinary skill in the art without making creative efforts all belongs to
In the range of the utility model protection.
Electricity fine or not to a kind of detection metal-oxide-semiconductor provided by the utility model and payload size with reference to the accompanying drawings and examples
Road and detection method are described in more detail.
Fig. 1 is the circuit structure of one embodiment of the detection metal-oxide-semiconductor quality of the utility model and the circuit of payload size
Schematic diagram, as shown in Figure 1, the circuit of the detection metal-oxide-semiconductor quality and payload size includes: triode Q1, triode Q2, triode
Q3；
The base stage of the triode Q1 is grounded by resistance R2, by adjusting resistance R1 connection input voltage signal ON_
NTC_MCU；
The collector of the triode Q1 is connect by adjusting resistance R3 with the base stage of the triode Q2；
The emitter of the triode Q1 is grounded；
Connection adjusts resistance R4, the emitter connection of the triode Q2 between the base stage and emitter of the triode Q2
Power supply B+；
The collector of the triode Q2 passes through the drain D D connection of resistance R5 and metal-oxide-semiconductor；
The base stage of the triode Q3 passes through resistance R7 connection input voltage signal ON_NTC_MCU；
The collector of the triode Q3 passes through the drain D D of resistance R6 connection metal-oxide-semiconductor；
The emitter of the triode Q3 is grounded by resistance R8；
The emitter of the triode Q3 connects voltage sampling unit, for acquiring the emitter voltage of the triode Q3
VOL P-。
In another embodiment of circuit based on above-mentioned detection metal-oxide-semiconductor quality and payload size, the adjusting resistance R5
Resistance value be 200K ohm.
In another embodiment of circuit based on above-mentioned detection metal-oxide-semiconductor quality and payload size, the adjusting resistance R6
Resistance value be 75K ohm.
In another embodiment of circuit based on above-mentioned detection metal-oxide-semiconductor quality and payload size, the input voltage letter
Number ON_NTC_MCU is provided by single-chip microcontroller STM32.
In another embodiment of circuit based on above-mentioned detection metal-oxide-semiconductor quality and payload size, the adjusting resistance R1,
Adjusting resistance R3, adjusting resistance R4 is adjustable resistance, is become by the resistance value of adjusting resistance R1, adjusting resistance R3, adjusting resistance R4
Change, the working condition of control triode Q1, triode Q2, triode Q3.
In the actual work, before metal-oxide-semiconductor switching circuit starts movement, input voltage signal ON_NTC_MCU is by monolithic
Machine STM32 provides a high voltage signal, adjusts resistance R1 by the base stage of triode Q1 and adjusts resistance R3, adjusts resistance
R4 adjusts triode Q1, makes it into saturation state, to make to adjust resistance R3, adjust resistance R4, triode Q1 is led in circuit
It is logical.The drain electrode connecting triode Q2 of N-channel MOS pipe, the collector of triode Q3 make triode Q2 by resistance R5, resistance R6
Enter saturation state with triode Q3, when metal-oxide-semiconductor source electrode and drain electrode short circuit, the emitter voltage VOL P- of triode Q3 is detected
To low level, regarding as metal-oxide-semiconductor switching circuit at this time, there are short circuit problems, and user is prompted to carry out relative program policing action.When
Metal-oxide-semiconductor switching circuit is under normal circumstances, is connected external loading, is equivalent to and seals in a resistance with DD in B+, pass through resistance
R5, resistance R6, the partial pressure of resistance R8 and triode Q3 emitter voltage VOL P- on voltage value, calculated by program,
It obtains the voltage of external loading, then by the inspection stream function in circuit, calculates the size of external loading.
Circuit fine or not to a kind of detection metal-oxide-semiconductor provided by the utility model and payload size has carried out detailed Jie above
It continues, specific case used herein is expounded the principles of the present invention and embodiment, and above embodiments are said
The bright method and its core concept for being merely used to help understand the utility model；At the same time, for those skilled in the art,
Based on the idea of the present invention, there will be changes in the specific implementation manner and application range, in conclusion this explanation
Book content should not be construed as a limitation of the present invention.
Finally, it should be noted that the above descriptions are merely preferred embodiments of the present invention, it is not limited to this
Utility model, although the utility model is described in detail with reference to the foregoing embodiments, for those skilled in the art
For, it is still possible to modify the technical solutions described in the foregoing embodiments, or to part of technical characteristic
It is equivalently replaced, within the spirit and principle of the utility model, any modification, equivalent replacement, improvement and so on,
It should be included within the scope of protection of this utility model.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820711865.2U CN208270710U (en) | 2018-05-14 | 2018-05-14 | A circuit for detecting whether the MOS tube is good or bad and the size of the load |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820711865.2U CN208270710U (en) | 2018-05-14 | 2018-05-14 | A circuit for detecting whether the MOS tube is good or bad and the size of the load |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208270710U true CN208270710U (en) | 2018-12-21 |
Family
ID=64682790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820711865.2U Active CN208270710U (en) | 2018-05-14 | 2018-05-14 | A circuit for detecting whether the MOS tube is good or bad and the size of the load |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208270710U (en) |
-
2018
- 2018-05-14 CN CN201820711865.2U patent/CN208270710U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 523000 Tongsha New Industrial Park, Dongcheng Street, Dongguan City, Guangdong Province Patentee after: Guangdong Boliwei Technology Co., Ltd. Address before: 523000 new industrial zone, Dongcheng District, Guangdong, Dongguan Patentee before: DongGuan Greenway Battery Co., Ltd. |