CN208208302U - Applied to self luminous current mode pixel unit circuit - Google Patents

Applied to self luminous current mode pixel unit circuit Download PDF

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CN208208302U
CN208208302U CN201820808094.9U CN201820808094U CN208208302U CN 208208302 U CN208208302 U CN 208208302U CN 201820808094 U CN201820808094 U CN 201820808094U CN 208208302 U CN208208302 U CN 208208302U
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transistor
signal line
input voltage
luminescent device
voltage signal
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赵博华
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Nanjing Micro Core Huapu Mdt Infotech Ltd
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Nanjing Micro Core Huapu Mdt Infotech Ltd
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Abstract

The utility model discloses one kind to be applied to self luminous current mode pixel unit circuit, it is characterised in that it includes: common cathode power supply line VCOM, the luminescent device of the first transistor M1, second transistor M2, third transistor M3, the 4th transistor M4, sampling holding capacitor C1, data signal line IDATA, switch control signal line SMP_HLD, the first input voltage signal line V1 and the second input voltage signal line V2, power supply line VDD, luminescent device.The novel current type pixel unit drive circuit that this patent proposes can effectively solve pixel array driving tube performance difference as caused by process deviation, and then improve the display consistency of whole display.In addition, this pixel circuit carries over-voltage protecting function, the grid oxygen breakdown problem of sample phase transistor can be effectively avoided.

Description

Applied to self luminous current mode pixel unit circuit
Technical field
The picture of pixel unit circuit more particularly to OLED/LED the micro display driving shown the utility model relates to self-luminous Plain element circuit.
Background technique
In recent years as ((Virtual Reality virtually shows AR (Augmented Reality, augmented reality)/VR The development of technology, the micro display technology being closely related therewith have also obtained extensive concern in fact).Micro display (Microdisplay) Technology is a branch of field of display technology, and display Diagonal Dimension less than 1 inch (2.54cm) or is generally referred to that It is a little small to needing the display of optical amplifier to be known as micro-display.Micro display technology common at present has OLEDoS (Organic Light- Emitting Diode on Silicon, silicon-based organic light-emitting), LEDoS (Light Emitting Diode on Silicon, silicon-based diode shine), LCoS (Liquid Crystal on Silicon, liquid crystal on silicon) and DMD (Digital Micro mirror Device, Digital Micromirror Device) four kinds, wherein OLEDoS and LEDoS, which is belonged to, actively shines, and LCoS Then belong to passive shine with DMD;Meanwhile OLEDoS and LEDoS also have the excellent of low-power consumption, high contrast and quick response Point, therefore they are more suitably applied in AR and VR technology.
OLEDoS and LEDoS micro-display utilizes amorphous silicon, microcrystal silicon or low temperature polysilicon process different from conventional, It is using silicon single crystal wafer as substrate, that is to say, that it can use the integrated circuit CMOS of existing maturation (Complementary Metal-Oxide-Semiconductor, complementary metal oxide semiconductor) technique, therefore it is not only The active matrix addressed of display screen matrix, which may be implemented, also may be implemented scan chain circuits, D/A conversion circuit, band gap base The drive control circuit of the various functions such as standard increases reliability to greatly reduce the aerial lug of device, realizes light Quantization.
The pixel unit circuit of OLEDoS and LEDoS is that each pixel size of current is realized in micro-display array of display The levels of precision of the circuit of control, each pixel current control directly affects the display consistency of entire micro-display;And it is current Traditional voltage-type pixel unit circuit will lead between pixel and pixel driving tube parameter not due to the deviation of manufacturing process Unanimously, and then the electric current between each pixel unit is caused to have a certain difference.Simultaneously as the cut-in voltage of OLED device Generally all in 2V or 3V or more, and the supply voltage of normal CMOS technology is up to 3.3V or so, thus inevitably Negative voltage is used, therefore, the design of pixel unit circuit is also required to consider the problems of overvoltage protection.In addition, the picture of different structure Plain element circuit will affect the design of whole drive scheme, and thus the reasonability of pixel unit circuit design just seems heavy to closing It wants.
Existing pixel cell capacitance is as shown in Figure 1, its pixel unit circuit for belonging to voltage-type, by most basic 2T1C (2 transistors, 1 capacitor) is constituted.Its basic working principle is:
(1) data write phase: when WR is high level, the conducting of M2 pipe, the voltage signal VDATA write-in of input Onto the grid and capacitor C1 of M1 pipe;
(2) light emitting phase: WR becomes low level, and the shutdown of M2 pipe is stored to the data voltage driving M1 pipe generation pair on C1 The driving current answered drives a current through OLED or LED component and shines, luminous brightness size and write-in data voltage phase It is corresponding.
Prior art there are the problem of:
Since the resolution ratio of micro-display is generally 800 × 600 or above (1280 × 1024 is even higher), picture The quantity of plain element circuit has reached hundreds of thousands even million ranks.And existing CMOS technology due to that can deposit in the fabrication process Threshold voltage, gate oxide thickness or the other parameters meeting of M1 pipe in certain process deviation, different pixel unit circuits There are certain differences.Therefore, each driving tube (M1) exists when converting input voltage into output electric current in pixel array Certain difference, and then will affect the consistency of display.
Utility model content
Display consistency problem existing for the voltage-type pixel unit circuit used for existing self-emitting display, provides A kind of novel current mode pixel unit circuit structure.
The utility model discloses one kind first and is applied to self luminous current mode pixel unit circuit, it includes: first Transistor M1, second transistor M2, third transistor M3, the 4th transistor M4, sampling holding capacitor C1, data signal line IDATA, switch control signal line SMP_HLD, the first input voltage signal line V1 and the second input voltage signal line V2, power supply line Common cathode power supply line VCOM, the luminescent device of VDD, luminescent device,
The source electrode of the power supply line VDD connection the first transistor M1;
The power supply line VDD, the first input voltage signal line V1 or the second input voltage signal line V2 keep electricity in sampling Hold the top crown switching of C1, the bottom crown of sampling holding capacitor C1 is separately connected the grid of the first transistor M1, second transistor The drain electrode of the source electrode, third transistor M3 of M2;
The switch control signal line SMP_HLD is separately connected the grid of the grid of second transistor M2, third transistor M3 Pole, the 4th transistor M4 grid;
The drain electrode of the data signal line IDATA connection second transistor M2;
The drain electrode of the 4th transistor M4 is separately connected the source electrode of the drain electrode of the first transistor M1, third transistor M3;
The anode of the source electrode connection luminescent device of the 4th transistor M4;
Cathode power line VCOM's cathode of the luminescent device is connected together;
Second input voltage signal line V2 voltage value > the first input voltage signal line V1 voltage value.
Preferably, the luminescent device is OLED or LED.
Preferably, the first transistor M1, second transistor M2 and third transistor M3 are PMOS tube, the 4th transistor M4 For NMOS tube.
The invention also discloses a kind of production methods of driving current, are applied to self luminous electric current based on described Type pixel unit circuit, including two operating modes: high current operating mode and low current operating mode, high current operating mode Under, the top crown of sampling holding capacitor C1 is directly connect with power supply line VDD;Under low current operating mode, holding capacitor C1 is sampled Top crown connect respectively with the first input voltage signal line V1 or the second input voltage signal line V2 in different working stages.
Specifically, the high current operating mode includes:
(1) data sampling stage, switch control signal line SMP_HLD are in low level, and second transistor M2 and third are brilliant Body pipe M3 conducting, the 4th transistor M4 cut-off, luminescent device are in non-light emitting state;The grid of the first transistor M1 and at this time The drain electrode of three transistor M3 is shorted together, and the first transistor M1 constitutes the type of attachment of a diode;At the same time, first The electric current of transistor M1 flows through second transistor M2 and third transistor M3, the input electricity of the electric current and data signal line IDATA Stream is consistent;The electric current of final data signal wire IDATA is converted into the lower pole that voltage signal VDATA is stored in sampling holding capacitor C1 Plate, that is, the first transistor M1 grid;The top crown of sampling holding capacitor C1 is connect with power supply line VDD;
(2) light emitting phase, switch control signal line SMP_HLD are in high level, second transistor M2 and third transistor M3 cut-off, the 4th transistor M4 conducting are maintained at the voltage VDATA driving the first transistor of the bottom crown of sampling holding capacitor C1 M1 generates driving current and sequentially flows through the 4th transistor M4, luminescent device, and luminescent device shines;Sample the upper of holding capacitor C1 Pole plate holding is connect with power supply line VDD.
Specifically, the low current operating mode includes:
(1) data sampling stage, switch control signal line SMP_HLD are in low level, and second transistor M2 and third are brilliant Body pipe M3 conducting, the 4th transistor M4 cut-off, luminescent device are in non-light emitting state;The grid of the first transistor M1 and at this time The drain electrode of three transistor M3 is shorted together, and the first transistor M1 constitutes the type of attachment of a diode;At the same time, first The electric current of transistor M1 flows through second transistor M2 and third transistor M3, the input electricity of the electric current and data signal line IDATA Stream is consistent;The electric current of final data signal wire IDATA is converted into the lower pole that voltage signal VDATA is stored in sampling holding capacitor C1 Plate, that is, the first transistor M1 grid;The top crown holding of sampling holding capacitor C1 is connect with the first input voltage signal line V1;
(2) light emitting phase, switch control signal line SMP_HLD are in high level, second transistor M2 and third transistor M3 cut-off, the 4th transistor M4 conducting are believed the connection signal line for sampling the top crown of holding capacitor C1 by the first input voltage Number line V1 is switched to the second input voltage signal line V2;Sampling holding capacitor C1 is in vacant state at this time, therefore samples and keep electricity The voltage signal VDATA variation for holding the bottom crown of C1 is VDATA+ (V2-V1), which drives the first transistor M1 to generate Corresponding driving current simultaneously sequentially flows through the 4th transistor M4, luminescent device, and luminescent device shines;During this, first crystal The source voltage VDD of pipe M1 is constant, and the grid voltage VDATA+ (V2-V1) of the first transistor M1 increases, therefore the first transistor M1 Gate-source voltage difference reduce, and then the first transistor M1 driving current it is corresponding reduce, to realize the driving of low current.
The invention also discloses the display methods of a kind of image or video, based on described in high current operating mode The production method of driving current is updated in the display data that the alternate run of two working stages completes a frame frame, and then is completed The display of image or video.
The invention also discloses the display methods of another image or video, based on described in low current operating mode Driving current production method, updated in the display data that the alternate run of two working stages completes a frame frame, and then complete At the display of image or video.
The beneficial effects of the utility model
The novel current type pixel unit drive circuit that this patent proposes, can effectively solve pixel array driving tube due to work Performance difference caused by skill deviation, and then improve the display consistency of whole display.It is protected in addition, this pixel circuit carries over-voltage Protective function can effectively avoid the grid oxygen breakdown problem of sample phase transistor.
Detailed description of the invention
Fig. 1 is conventional voltage type pixel unit circuit
Fig. 2 is the current mode pixel unit circuit of the utility model
Fig. 3 is the sample phase under the current mode pixel unit circuit high current mode of the utility model
Fig. 4 is the light emitting phase under the current mode pixel unit circuit high current mode of the utility model
Fig. 5 is the sample phase under the current mode pixel unit circuit low current mode of the utility model
Fig. 6 is the light emitting phase under the current mode pixel unit circuit low current mode of the utility model
Fig. 7 is the current mode pixel unit circuit of the utility model in sample phase overvoltage protection schematic diagram
Fig. 8 is the current mode pixel unit circuit working timing figure of the utility model
Specific embodiment
Below with reference to embodiment, the utility model is described in further detail, but the protection scope of the utility model is not limited to This:
In conjunction with Fig. 2, it is applied to self luminous current mode pixel unit circuit, it includes: the first transistor M1, the second crystal Pipe M2, third transistor M3, the 4th transistor M4, sampling holding capacitor C1, data signal line IDATA, switch control signal line SMP_HLD, the first input voltage signal line V1 and the second input voltage signal line V2, power supply line VDD, luminescent device common cathode Power supply line VCOM, luminescent device.
The source electrode of the power supply line VDD connection the first transistor M1;
The power supply line VDD, the first input voltage signal line V1 or the second input voltage signal line V2 keep electricity in sampling Hold the top crown switching of C1, the bottom crown of sampling holding capacitor C1 is separately connected the grid of the first transistor M1, second transistor The drain electrode of the source electrode, third transistor M3 of M2;
The switch control signal line SMP_HLD is separately connected the grid of the grid of second transistor M2, third transistor M3 Pole, the 4th transistor M4 grid;
The drain electrode of the data signal line IDATA connection second transistor M2;
The drain electrode of the 4th transistor M4 is separately connected the source electrode of the drain electrode of the first transistor M1, third transistor M3;
The anode of the source electrode connection luminescent device of the 4th transistor M4;
Cathode power line VCOM's cathode of the luminescent device is connected together;
Second input voltage signal line V2 voltage value > the first input voltage signal line V1 voltage value.
Wherein: luminescent device can be OLED or LED.The first transistor M1, second transistor M2 and third transistor M3 It is PMOS tube, the 4th transistor M4 is NMOS tube.
A kind of production method of driving current, based on the self luminous current mode pixel unit circuit that is applied to, packet It includes two operating modes: high current operating mode and low current operating mode, under high current operating mode, samples holding capacitor C1 Top crown directly connect with power supply line VDD;Under low current operating mode, the top crown of holding capacitor C1 is sampled in different works Make the stage connect with the first input voltage signal line V1 or the second input voltage signal line V2 respectively.
Specifically, the high current operating mode includes:
(1) the data sampling stage is in low level, second transistor M2 in conjunction with Fig. 3, switch control signal line SMP_HLD It is connected with third transistor M3, the 4th transistor M4 cut-off, luminescent device is in non-light emitting state;The first transistor M1 at this time The drain electrode of grid and third transistor M3 is shorted together, and the first transistor M1 constitutes the type of attachment of a diode;With this Meanwhile the electric current of the first transistor M1 flows through second transistor M2 and third transistor M3, the electric current and data signal line IDATA Input current it is consistent;The electric current of final data signal wire IDATA is converted into voltage signal VDATA and is stored in sampling holding electricity Hold bottom crown, that is, the first transistor M1 grid of C1;The top crown of sampling holding capacitor C1 is connect with power supply line VDD;
(2) light emitting phase is in high level, second transistor M2 and in conjunction with Fig. 4, switch control signal line SMP_HLD Three transistor M3 cut-off, the 4th transistor M4 conducting are maintained at the voltage VDATA driving of the bottom crown of sampling holding capacitor C1 The first transistor M1 generates driving current and sequentially flows through the 4th transistor M4, luminescent device, and luminescent device shines;Sampling is kept The top crown holding of capacitor C1 is connect with power supply line VDD.
Specifically, the low current operating mode includes:
(1) the data sampling stage is in low level, second transistor M2 in conjunction with Fig. 5, switch control signal line SMP_HLD It is connected with third transistor M3, the 4th transistor M4 cut-off, luminescent device is in non-light emitting state;The first transistor M1 at this time The drain electrode of grid and third transistor M3 is shorted together, and the first transistor M1 constitutes the type of attachment of a diode;With this Meanwhile the electric current of the first transistor M1 flows through second transistor M2 and third transistor M3, the electric current and data signal line IDATA Input current it is consistent;The electric current of final data signal wire IDATA is converted into voltage signal VDATA and is stored in sampling holding capacitor The bottom crown of C1, that is, the first transistor M1 grid;The top crown for sampling holding capacitor C1 is kept and the first input voltage signal line V1 connection;
(2) light emitting phase is in high level, second transistor M2 and in conjunction with Fig. 6, switch control signal line SMP_HLD Three transistor M3 cut-off, the 4th transistor M4 conducting, the connection signal line that will sample the top crown of holding capacitor C1 are defeated by first Enter voltage signal line V1 and is switched to the second input voltage signal line V2;Sampling holding capacitor C1 is in vacant state at this time, therefore adopts The voltage signal VDATA variation of the bottom crown of sample holding capacitor C1 is VDATA+ (V2-V1), which drives first crystal Pipe M1 generates corresponding driving current and sequentially flows through the 4th transistor M4, luminescent device, and luminescent device shines;During this, The source voltage VDD of the first transistor M1 is constant, and the grid voltage VDATA+ (V2-V1) of the first transistor M1 increases, therefore first The gate-source voltage difference of transistor M1 reduces, and then the corresponding reduction of driving current of the first transistor M1, to realize small electricity The driving of stream.
Above-mentioned drive scheme is current signal when transmitting data-signal into pixel unit circuit, and first is brilliant The data voltage of body pipe M1 grid end is to be generated by the electric current of input, therefore it is not influenced by transistor parameter variation;Separately It outside, due to input is current signal, the ability of its anti-noise jamming is stronger for voltage signal, therefore can improve aobvious Show the whole display effect of device.
Further, since the 4th transistor M4 is NMOS tube, when the anode voltage of OLED/LED luminescent device is lower, such as Shown in Fig. 7, parasitic diode is led between the substrate (typically earth level) and the anode of luminescent device of the 4th transistor M4 It is logical, the voltage of anode is drawn to a higher level, to avoid between the grid and source electrode of the 4th transistor M4 that there are one A biggish pressure difference.Therefore, the also included over-voltage protecting function of this circuit.
The display methods of a kind of image or video, the generation side based on driving current described in high current operating mode Method is updated in the display data that the alternate run of two working stages completes a frame frame in conjunction with Fig. 8, so complete image or The display of video.
The display methods of another image or video, the generation side based on driving current described in low current operating mode Method is updated in the display data that the alternate run of two working stages completes a frame frame in conjunction with Fig. 8, so complete image or The display of video.
Specific embodiment described herein is only to illustrate to the spirit of the present invention.The utility model institute Belonging to those skilled in the art can make various modifications or additions to the described embodiments or using similar Mode substitute, but without departing from the spirit of the present application or beyond the scope of the appended claims.

Claims (3)

1. one kind is applied to self luminous current mode pixel unit circuit, it is characterised in that it includes: the first transistor M1, second Transistor M2, third transistor M3, the 4th transistor M4, sampling holding capacitor C1, data signal line IDATA, switch control letter Number line SMP_HLD, the first input voltage signal line V1 and the second input voltage signal line V2, power supply line VDD, luminescent device are total to Cathode power line VCOM, luminescent device,
The source electrode of the power supply line VDD connection the first transistor M1;
The power supply line VDD, the first input voltage signal line V1 or the second input voltage signal line V2 are in sampling holding capacitor C1 Top crown switching, the bottom crown of sampling holding capacitor C1 is separately connected the grid of the first transistor M1, second transistor M2 The drain electrode of source electrode, third transistor M3;
The switch control signal line SMP_HLD is separately connected the grid of second transistor M2, the grid of third transistor M3, The grid of four transistor M4;
The drain electrode of the data signal line IDATA connection second transistor M2;
The drain electrode of the 4th transistor M4 is separately connected the source electrode of the drain electrode of the first transistor M1, third transistor M3;
The anode of the source electrode connection luminescent device of the 4th transistor M4;
Cathode power line VCOM's cathode of the luminescent device is connected together;
Second input voltage signal line V2 voltage value > the first input voltage signal line V1 voltage value.
2. circuit according to claim 1, it is characterised in that the luminescent device is OLED or LED.
3. circuit according to claim 1, it is characterised in that the first transistor M1, second transistor M2 and third transistor M3 is PMOS tube, and the 4th transistor M4 is NMOS tube.
CN201820808094.9U 2018-05-25 2018-05-25 Applied to self luminous current mode pixel unit circuit Active CN208208302U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108550344A (en) * 2018-05-25 2018-09-18 南京微芯华谱信息科技有限公司 Display methods applied to self luminous current mode pixel unit circuit, the production method of driving current, image or video
CN110930936A (en) * 2018-09-14 2020-03-27 联咏科技股份有限公司 Current-driven digital pixel arrangement for micro-light emitting device array

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108550344A (en) * 2018-05-25 2018-09-18 南京微芯华谱信息科技有限公司 Display methods applied to self luminous current mode pixel unit circuit, the production method of driving current, image or video
CN108550344B (en) * 2018-05-25 2023-08-08 南京微芯华谱信息科技有限公司 Current-type pixel unit circuit applied to self-luminescence, driving current generation method and image or video display method
CN110930936A (en) * 2018-09-14 2020-03-27 联咏科技股份有限公司 Current-driven digital pixel arrangement for micro-light emitting device array

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