CN208093551U - A kind of semiconductor ultra-fine copper based bonding wire - Google Patents
A kind of semiconductor ultra-fine copper based bonding wire Download PDFInfo
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- CN208093551U CN208093551U CN201820709017.8U CN201820709017U CN208093551U CN 208093551 U CN208093551 U CN 208093551U CN 201820709017 U CN201820709017 U CN 201820709017U CN 208093551 U CN208093551 U CN 208093551U
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- layer
- bonding wire
- glass fibre
- based bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
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Abstract
The utility model is related to technical field of semiconductors, and disclose a kind of semiconductor ultra-fine copper based bonding wire, including endosexine, the outer surface of the endosexine is equipped with glass fibre composite block, side of the glass fibre composite block far from endosexine is equipped with polyvinyl chloride layer, side of the polyvinyl chloride layer far from glass fibre composite block is equipped with flame-proof silicon rubber block, and side of the flame-proof silicon rubber block far from polyvinyl chloride layer is equipped with Polycarbonate Layer.Semiconductor ultra-fine copper based bonding wire, by the way that glass fibre composite block is arranged, glass fibre it is compound soon it is higher than organic fiber heatproof, non-ignitable, anti-it is rotten, heat-insulated, sound-proofing is good, tensile strength is high and electrical insulating property is good, but property is crisp and wearability is poor, therefore by the way that yttrium barium copper oxide layer is arranged, the electric conductivity of yttrium barium copper oxide layer is best, therefore the use that can be more adapted to semiconductor and tear material open is used cooperatively by yttrium barium copper oxide layer and glass fibre composite block so that the using effect that semiconductor tears material open is more preferable.
Description
Technical field
The utility model is related to technical field of semiconductors, specially a kind of semiconductor ultra-fine copper based bonding wire.
Background technology
Semiconductor refers to material of the electric conductivity between conductor and insulator under room temperature, and semiconductor is in radio, TV
It has a wide range of applications on machine and thermometric, if diode is exactly the device using semiconductor fabrication, semiconductor refers to a kind of conduction
Property can be controlled, range can from insulator to the material between conductor, no matter from the perspective of science and technology or economic development, half
The importance of conductor be all it is very huge, today most electronic product, such as computer, mobile phone or digital recording
Core cell in machine all has extremely close connection, common semi-conducting material to have silicon, germanium and GaAs with semiconductor
Deng, and silicon is even more most influential one kind in business application in various semi-conducting materials.
Because semiconductor is widely used, therefore the structure for being adapted to semiconductor is also more and more, wherein copper-based bonding
Silk is typically applied to semi-conducting material, but the inoxidizability of copper-based bonding wire is not strong enough, therefore when being adapted to semi-conducting material,
Being contacted for a long time with substances such as air influences to use the phenomenon that copper-based bonding wire can be caused to aoxidize, and copper-based bonding wire
Matter it is soft not good enough, and be adapted to semiconductor and the metamorphosis such as need to bend, it is thus possible to copper-based bonding wire can be caused to be broken
The phenomenon that, therefore herein proposed a kind of semiconductor and solved problems with ultra-fine copper based bonding wire.
Utility model content
(1) the technical issues of solving
In view of the deficiencies of the prior art, the utility model provides a kind of semiconductor ultra-fine copper based bonding wire, has anti-
The advantages that oxidisability is strong, the inoxidizability for solving copper-based bonding wire is not strong enough, therefore when being adapted to semi-conducting material, for a long time
Contacted with substances such as air and influence to use the phenomenon that copper-based bonding wire can be caused to aoxidize, and the matter of copper-based bonding wire is soft
Property it is not good enough, and be adapted to semiconductor and the metamorphosis such as need to bend, it is thus possible to the phenomenon that copper-based bonding wire can be caused to be broken
The problem of.
(2) technical solution
To realize that the strong purpose of above-mentioned inoxidizability, the utility model provide the following technical solutions：A kind of semiconductor use is super
Thin copper-based bonding wire, including endosexine, the outer surface of the endosexine are equipped with glass fibre composite block, glass fibre composite block
Side far from endosexine is equipped with polyvinyl chloride layer, and side of the polyvinyl chloride layer far from glass fibre composite block is equipped with fire-retardant
Silicon rubber block, side of the flame-proof silicon rubber block far from polyvinyl chloride layer are equipped with Polycarbonate Layer, and Polycarbonate Layer is far from fire-retardant
The side of silicon rubber block is equipped with yttrium barium copper oxide layer, and side of the yttrium barium copper oxide layer far from Polycarbonate Layer is equipped with super
High-temp antioxidizing paint, side of the superhigh temperature antioxidizing paint far from yttrium barium copper oxide layer are equipped with high molecular abrasion-proof layer.
Preferably, the high molecular abrasion-proof layer is mainly made of base-material, filler and other auxiliary agents, and wherein organic polymer is poly-
Other components are cohered and form continuous film on the surface of friction means by base-material of the polymer modified epoxy resin as coating.
Preferably, the polyvinyl chloride layer, English abbreviation PVC is vinyl chloride monomer in peroxide and azo-compound
Equal initiators；Or the polymer being polymerized by mechanism of free-radical polymerization under light and heat effect.
Preferably, the crystal of the yttrium barium copper oxide layer be the double-deck copper oxide molecular layer and one layer of slightly thicker barium,
Copper and the interaction superposition of oxygen atom middle layer constitute crystal.
(3) advantageous effect
Compared with prior art, the utility model provides a kind of semiconductor ultra-fine copper based bonding wire, and having following has
Beneficial effect：
1, semiconductor ultra-fine copper based bonding wire, by the way that glass fibre composite block is arranged, the compound fast ratio of glass fibre has
Machine fiber heatproof it is high, non-ignitable, anti-it is rotten, heat-insulated, sound-proofing is good, tensile strength is high and electrical insulating property is good, but property is crisp and wearability compared with
Difference, therefore by the way that yttrium barium copper oxide layer is arranged, the electric conductivity of yttrium barium copper oxide layer is best, therefore passes through yttrium barium copper oxide
Layer and glass fibre composite block, which are used cooperatively, can more be adapted to the use that semiconductor tears material open so that semiconductor tears making for material open
It is more preferable with effect.
2, semiconductor ultra-fine copper based bonding wire enables to copper-based bonding wire to have more by the way that poly- record pvdf layer is arranged
Good matter is soft and plasticity, the case where avoiding being broken after being repeatedly folded over because semiconductor is adapted to, fire-retardant silicon rubber
Blob of viscose equally have matter it is soft, and its shockproof properties it is good therefore enable to copper-based bonding wire semiconductor endoadaptation effect more
It is good, enable to copper-based bonding wire to can adapt in height by superhigh temperature antioxidizing paint and being used cooperatively for high molecular abrasion-proof layer
Without damaging in the case of temperature, so that the service life is longer in a semiconductor material for copper-based bonding wire, and outermost layer is logical
Crossing setting high molecular abrasion-proof layer enables to the appearance of copper-based bonding wire more wear-resisting so that the inoxidizability of copper-based bonding wire
More preferably.
Description of the drawings
FIG. 1 is a schematic structural view of the utility model.
In figure：1 endosexine, 2 glass fibre composite blocks, 3 polyvinyl chloride layers, 4 flame-proof silicon rubber blocks, 5 Polycarbonate Layers, 6
Yttrium barium copper oxide layer, 7 superhigh temperature antioxidizing paints, 8 high molecular abrasion-proof layers.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
Referring to Fig. 1, a kind of semiconductor ultra-fine copper based bonding wire, including endosexine 1, the outer surface of endosexine 1 are laid with
There is glass fibre composite block 2, by the way that glass fibre composite block 2 is arranged, glass fibre compound fast 2 is higher than organic fiber heatproof, no
Combustion, it is anti-it is rotten, heat-insulated, sound-proofing is good, tensile strength is high and electrical insulating property is good, but property is crisp and wearability is poor, therefore passes through setting
The electric conductivity of yttrium barium copper oxide layer 6, yttrium barium copper oxide layer 6 is best, therefore passes through yttrium barium copper oxide layer 6 and glass fibre
Composite block 2, which is used cooperatively, can more be adapted to the use that semiconductor tears material open so that and the using effect that semiconductor tears material open is more preferable,
Side of the glass fibre composite block 2 far from endosexine 1 is equipped with polyvinyl chloride layer 3, is enabled to by the way that poly- record pvdf layer 3 is arranged
Copper-based bonding wire has better matter soft and plasticity, avoids being broken after being repeatedly folded over because semiconductor is adapted to
The case where, flame-proof silicon rubber block 4 equally has matter soft, and its shockproof properties is good therefore copper-based bonding wire is enabled to partly to lead
Adaptation effect is more preferable in vivo, and copper-based key is enabled to by superhigh temperature antioxidizing paint 7 and being used cooperatively for high molecular abrasion-proof layer 8
Plying can adapt to without damaging under high-temperature condition, so that the service life of copper-based bonding wire in a semiconductor material
It is longer, and outermost layer enables to the appearance of copper-based bonding wire more wear-resisting by the way that high molecular abrasion-proof layer 8 is arranged so that it is copper-based
The inoxidizability of bonding wire is more preferable, polyvinyl chloride, English abbreviation PVC, is vinyl chloride monomer in peroxide and azo-compound
Equal initiators, or the polymer that is polymerized by mechanism of free-radical polymerization under light and heat effect, ryuron and
Vinyl chloride copolymer system is referred to as vinyl chloride resin, and side of the polyvinyl chloride layer 3 far from glass fibre composite block 2 is equipped with fire-retardant
Silicon rubber block 4, side of the flame-proof silicon rubber block 4 far from polyvinyl chloride layer 3 are equipped with Polycarbonate Layer 5, and Polycarbonate Layer 5 is colourless
Transparent, heat-resisting, shock resistance and fire-retardant has good mechanical performance in commonly used temperature, with performance close to poly- methyl-prop
E pioic acid methyl ester is compared, and the impact resistance of makrolon is good, and high refractive index, processing performance is good, and not needing additive just has
UL94V-0 grades of flame retardant properties, side of the Polycarbonate Layer 5 far from flame-proof silicon rubber block 4 are equipped with yttrium barium copper oxide layer 6, yttrium
Side of the barium-copper oxide layer 6 far from Polycarbonate Layer 5 is equipped with superhigh temperature antioxidizing paint 7, and superhigh temperature antioxidizing paint 7 is remote
Side from yttrium barium copper oxide layer 6 is equipped with high molecular abrasion-proof layer 8, and high molecular abrasion-proof composite coating 8 is mainly by base-material, filler
It is constituted with other auxiliary agents, wherein base-material of the organic high molecular polymer modified epoxy as coating, other components is cohered
Continuous film is formed on the surface of friction means, filler of the inorganic particle as coating primarily serves the wear-resisting effect of anti-attrition, auxiliary agent
Dosage very little, be mainly used to improve coating performance in a certain respect, high molecular abrasion-proof layer 8 is mainly by base-material, filler and other
Auxiliary agent is constituted, wherein base-material of the organic high molecular polymer modified epoxy as coating, and other components are cohered and are being rubbed
The surface of component forms continuous film, and ZS-1023 superhigh temperature metals antioxidizing paint 7, long-term superhigh temperature resistant can reach 3000
DEG C, it can be very good to protect metal not oxidation corrosion at high temperature, can effectively prevent under high temperature oxygen to matrix permeability, hardness
Height, shock resistance, linear expansion coefficient height and heat are shaken, and coefficient is good, and ZS-1023 superhigh temperature metal antioxidizing paints research and development technology is in the world
Be in a leading position level, with high content of technology, which can brush the fuel metal spray in aircraft, rocket and various high-speed aircrafts
Mouth, nose cap, is prevented at tip on blade, on missile shell, aviation and the high-temperature metal surface of rocket engine and superhigh temperature equipment
Oxidation corrosion.
In conclusion semiconductor ultra-fine copper based bonding wire, by the way that glass fibre composite block 2 is arranged, glass fibre is multiple
Close fast 2 it is higher than organic fiber heatproof, non-ignitable, anti-it is rotten, heat-insulated, sound-proofing is good, tensile strength is high and electrical insulating property is good, but property it is crisp and
Wearability is poor, therefore by the way that yttrium barium copper oxide layer 6 is arranged, the electric conductivity of yttrium barium copper oxide layer 6 is best, therefore passes through yttrium
Barium-copper oxide layer 6 and glass fibre composite block 2, which are used cooperatively, can more be adapted to the use that semiconductor tears material open so that half
The using effect that conductor tears material open is more preferable, enables to copper-based bonding wire to have better matter soft by the way that poly- record pvdf layer 3 is arranged
And plasticity, the case where avoiding being broken after being repeatedly folded over because semiconductor is adapted to, flame-proof silicon rubber block 4 equally has
Have that matter is soft, and its shockproof properties is good therefore enables to copper-based bonding wire more preferable in semiconductor endoadaptation effect, passes through superelevation
Warm antioxidizing paint 7 and being used cooperatively for high molecular abrasion-proof layer 8 enable to copper-based bonding wire to can adapt under high-temperature condition
Without damaging, so that the service life is longer in a semiconductor material for copper-based bonding wire, and outermost layer is high by being arranged
Molecule wearing layer 8 enables to the appearance of copper-based bonding wire more wear-resisting so that the inoxidizability of copper-based bonding wire is more preferable, solution
Determined copper-based bonding wire inoxidizability it is not strong enough, therefore when being adapted to semi-conducting material, connect for a long time with substances such as air
Tactile the phenomenon that copper-based bonding wire can be caused to aoxidize, influences to use, and the matter of copper-based bonding wire is soft not good enough, and adapts to
The metamorphosis such as need to bend in semiconductor, it is thus possible to the problem of the phenomenon that copper-based bonding wire can be caused to be broken.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is appreciated that can these embodiments be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaiied
Change, replace and modification, the scope of the utility model are defined by the appended claims and the equivalents thereof.
Claims (4)
1. a kind of semiconductor ultra-fine copper based bonding wire, including endosexine (1), it is characterised in that：The appearance of the endosexine (1)
Face is equipped with glass fibre composite block (2), and side of the glass fibre composite block (2) far from endosexine (1) is equipped with polyvinyl chloride
Layer (3), side of the polyvinyl chloride layer (3) far from glass fibre composite block (2) are equipped with flame-proof silicon rubber block (4), fire-retardant silicon rubber
Side of the blob of viscose (4) far from polyvinyl chloride layer (3) is equipped with Polycarbonate Layer (5), and Polycarbonate Layer (5) is far from flame-proof silicon rubber
The side of block (4) is equipped with yttrium barium copper oxide layer (6), and side of the yttrium barium copper oxide layer (6) far from Polycarbonate Layer (5) is spread
Equipped with superhigh temperature antioxidizing paint (7), side of the superhigh temperature antioxidizing paint (7) far from yttrium barium copper oxide layer (6) is equipped with
High molecular abrasion-proof layer (8).
2. a kind of semiconductor ultra-fine copper based bonding wire according to claim 1, it is characterised in that：The high molecular abrasion-proof
Layer (8) is mainly made of base-material, filler and other auxiliary agents, and wherein organic high molecular polymer modified epoxy is as coating
Other components are cohered and form continuous film on the surface of friction means by base-material.
3. a kind of semiconductor ultra-fine copper based bonding wire according to claim 1, it is characterised in that：The polyvinyl chloride layer
(3), English abbreviation PVC is vinyl chloride monomer in the initiators such as peroxide and azo-compound；Or it is pressed under light and heat effect
The polymer that mechanism of free-radical polymerization is polymerized.
4. a kind of semiconductor ultra-fine copper based bonding wire according to claim 1, it is characterised in that：The yttrium barium copper oxide
The crystal of nitride layer (6) is that the double-deck copper oxide molecular layer interacts superposition structure with one layer of slightly thicker barium, copper and oxygen atom middle layer
At crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820709017.8U CN208093551U (en) | 2018-05-14 | 2018-05-14 | A kind of semiconductor ultra-fine copper based bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820709017.8U CN208093551U (en) | 2018-05-14 | 2018-05-14 | A kind of semiconductor ultra-fine copper based bonding wire |
Publications (1)
| Publication Number | Publication Date |
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| CN208093551U true CN208093551U (en) | 2018-11-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201820709017.8U Expired - Fee Related CN208093551U (en) | 2018-05-14 | 2018-05-14 | A kind of semiconductor ultra-fine copper based bonding wire |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112659802A (en) * | 2020-12-18 | 2021-04-16 | 昆明德源文化传播有限公司 | Method for manufacturing cloisonne enamel color painting made of tin material |
-
2018
- 2018-05-14 CN CN201820709017.8U patent/CN208093551U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112659802A (en) * | 2020-12-18 | 2021-04-16 | 昆明德源文化传播有限公司 | Method for manufacturing cloisonne enamel color painting made of tin material |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181113 Termination date: 20190514 |